|Publication number||US7740459 B2|
|Application number||US 10/564,370|
|Publication date||Jun 22, 2010|
|Filing date||Jul 7, 2004|
|Priority date||Jul 28, 2003|
|Also published as||DE10334240A1, DE502004003703D1, EP1651867A1, EP1651867B1, US20060186085, WO2005015021A1|
|Publication number||10564370, 564370, PCT/2004/1447, PCT/DE/2004/001447, PCT/DE/2004/01447, PCT/DE/4/001447, PCT/DE/4/01447, PCT/DE2004/001447, PCT/DE2004/01447, PCT/DE2004001447, PCT/DE200401447, PCT/DE4/001447, PCT/DE4/01447, PCT/DE4001447, PCT/DE401447, US 7740459 B2, US 7740459B2, US-B2-7740459, US7740459 B2, US7740459B2|
|Inventors||Matthias Fuertsch, Hubert Benzel, Stefan Finkbeiner, Stefan Pinter, Frank Fischer, Heiko Stahl, Tjalf Pirk|
|Original Assignee||Robert Bosch Gmbh|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (7), Referenced by (2), Classifications (5), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present invention relates to a method for producing a micromechanical component, preferably for fluidic applications, and a micropump having a pump chamber.
Micropumps are used for various technical fields, particularly in the medical field, in order to convey small quantities of fluids in a precise manner. Micromechanical manufacturing methods are used for producing micropumps, silicon being used, for example, which may be simply and precisely patterned using appropriate depositing and etching methods.
This type of micropump is described in U.S. Pat. No. 6,390,791, which is produced on an SOI wafer. This micropump is made up of a triple stack having two glass wafers and an SOI wafer located in between. In order to produce a pump diaphragm, a monocrystalline silicon layer of the SOI wafer is used, for the production, for example, a dry etching method (DRIE) being used for patterning the silicon layer, and a sacrificial oxide etching method being used for exposing the patterns. The disadvantages of this method include that, in the high-rate etching method, the etching depth is established by the etching time, and is therefore not precisely controllable. If one does not keep precisely to the etching time, the result is a thickness variation of the functional layer of which the pump diaphragm is formed. This leads to different pump characteristics of the micropump. In addition, in the conventional method, it is disadvantageous that sacrificial oxide etching steps are required which have the effect of a nonreproducible undercut etching depth, since there is no lateral etch stop.
It is an object of the present invention to make available a simple and flexible method for producing a component preferably for fluidic applications, and a simple and cost-effective micropump that is to be produced using this method.
One advantage of the method according to the present invention is that, by the use of two functional layers and by the use of two etch stop layers, which may also be used as sacrificial layers, there is a high flexibility in the production of differently patterned functional layers.
The second functional layer is preferably ablated down to the second etch stop layer, corresponding to an etching mask, and subsequently the first functional layer is ablated down to the first etch stop layer, corresponding to the pattern of the second etch stop layer, which is used as the second etching mask. This makes possible a simple and precise patterning of the first and the second functional layer.
In another preferred specific embodiment, the base plate is patterned beginning from the underside to the first etch stop layer, and the first etch stop layer is removed as sacrificial layer in an etching procedure in predetermined regions, the predetermined regions extending between the first functional layer and the base plate. In this way it is possible to expose the first functional layer beginning from the underside.
In one preferred specific embodiment, a lateral etching of the first etch stop layer is limited by the first functional layer, which is applied directly to the base plate, bordering on the fixed regions of the first etch stop layer. This precisely establishes the regions that are created by etching away the first etch stop layer used as a sacrificial layer.
In a further preferred specific embodiment, the first etch stop layer is etched away as a sacrificial layer in established regions via openings in the first functional layer. In this way, too, it is possible to expose the underside of the first functional layer.
In a further preferred specific embodiment, the first etch stop layer is etched away via openings in the base plate before the patterning of the first functional layer. Subsequently, the first functional layer is patterned from the upper side, i.e., from the side of the second etch stop layer. In certain application fields, this procedure may have advantages over the methods described above.
In order to close the patterned regions, preferably a cover plate is applied to the upper side or a bottom plate is applied to the base plate, using an anodic bonding method, and is tightly connected to the component all the way around. In order that movable parts of the second functional layer or movable parts of the base plate are not bonded in response to the bonding method, anti-bonding layers are applied to the upper side of the moving parts of the second functional layer, to the underside of the movable parts of the base plate or to the corresponding regions of the cover plate or the floor plate.
In one other preferred specific embodiment, a sequence of coatings made of a first lower silicon oxide layer, a middle polysilicon layer and an upper second silicon oxide layer is used as the first etch stop layer. The use of this sequence of layers offers the advantage that, after the opening of the enveloping silicon oxide layer at one location, it makes possible a rapid etching of large areas of the polysilicon layer, for instance, using xenon difluoride or chlorine trifluoride, especially in comparison to gas phase hydrogen fluoride etching methods. Consequently, the process duration for etching the first etch stop layer is clearly reduced.
Using the method described, one is able to produce, for example, components for fluidic applications, preferably a micropump.
One example micropump according to an example embodiment of the present invention has the advantage that the pump diaphragm is formed of a polysilicon layer. This enables a simple and precise patterning of the pump diaphragm.
The polysilicon layer is preferably developed in different thicknesses in various areas, depending on the function of the polysilicon layer in the respective area. This establishes the mechanical stability of the polysilicon layer according to the desired method of functioning.
By using the polysilicon layer, etch stop layers may be applied on the polysilicon layer during the production of the pump diaphragm, which may be used almost independently of the etching time for the production of a precise thickness of the polysilicon layer.
In one preferred specific embodiment, the polysilicon layer is also used to form the closing element of the intake valve. For the formation of the closing element of the intake valve, it is also advantageous if one is able to set the thickness of the polysilicon layer in a precise manner. With the aid of the thickness of the polysilicon layer, the spring constant, and thus the closing and opening time of the intake valve is varied, within which the intake valve is closed or opened during the compression procedure. A short closing and opening time lead to a great efficiency of the micropump. In addition, by a sufficient thickness it is ensured that the intake valve is securely closed and is robustly resistant to damage.
In still another preferred specific embodiment, the closing element of the outlet valve is also represented by the polysilicon layer. For the desired functioning of the outlet valve, the closing member of the outlet valve, too, has to be produced by a polysilicon layer having a specified thickness.
In yet another preferred specific embodiment, the polysilicon layer, in predefined areas, especially in areas of the intake valve, of the outlet valve and/or of the pump chamber, has a lesser thickness than in other areas. Thereby, corresponding to the various tasks of the polysilicon layer, a different flexibility of the polysilicon layer is set in various areas. Consequently, an optimized polysilicon layer is made available.
Because of the method according to one example embodiment of the present invention, it is possible to produce polysilicon layers as functional layers for a micropump having specified thicknesses. For this, in each case one etch stop layer is used that is applied under the polysilicon layer. A second etch stop layer and a second polysilicon layer are applied onto the first polysilicon layer.
In a further preferred method, the first etch stop layer is removed before the application of the first functional layer in the area of the intake valve, the outlet valve and in the area of the pump chamber. Thereby the geometry of the polysilicon layer is set in a specified manner. Consequently, for example, a purposeful and reproducible setting of the spring constant of the polysilicon layer is made possible in the areas of the intake valve, the outlet valve and in the area of the pump chamber.
The present invention is explained below in greater detail with reference to the figures.
Outlet valve 10 has a second closing element 13 which is also developed as a part of functional layer 3, and represents a sleeve shape having an outlet opening 24. The height of the sleeve corresponds to the height of functional layer 3 in the edge region, so that the upper side of the sleeve lies against a ring sealing surface that is situated on the underside of cover plate 4. Outlet opening 24 makes a transition into outlet chamber 14 which is inserted into base plate 2, and represents a part of outflow channel 11. Outlet chamber 14 may have a greater cross section than the part of outflow channel 11 that is inserted into bottom plate 5.
Underneath pump chamber 8 in base plate 2, an actuator room 15 is formed in which a piston 16 is situated. Piston 16 is connected to pump diaphragm 9 via first etch stop layer 17. Underneath piston 16, bottom plate 5 has an opening 25 via which an actuator may be brought to lie against piston 16.
The micropump functions as follows: In the initial state intake valve 6 is open, and outlet valve 10 is closed. Thus, fluid is able to penetrate into the pump chamber. In order to pump a fluid from inlet channel 7 to outflow channel 11, piston 16 is moved up and down. In this context, pump diaphragm 9 is also moved up and down. By the movement of pump diaphragm 9, the volume of pump chamber 8 is periodically reduced in size and enlarged. When there is a reduction in the size of the pump chamber, excess pressure is generated in pump chamber 8, so that outlet valve 10 is opened and lets fluid escape from pump chamber 8 into outlet chamber 14, and intake valve 6 is closed, and prevents an after-flow of fluid. Consequently, a specified quantity of fluid is conveyed per pump stroke. Now, when subsequently piston 16 is pulled back, the volume of pump chamber 8 is increased and a corresponding underpressure is generated in pump chamber 8. Because of the underpressure, intake valve 6 opens and fluid is sucked via inlet channel 7 into pump chamber 8. At the same time, the outlet valve closes again. In response to the underpressure, second closing element 13 of outlet valve 10 lies in a sealing manner against the underside of cover plate 4, so that no fluid is able to flow into the pump chamber via outlet valve 10. Consequently, a back flow of fluid from outlet chamber 14 into pump chamber 8 is avoided.
A first example production method is explained in connection with
Subsequently, a second etch stop layer 18 is applied to functional layer 3, and patterned to have a second pattern. Second etch stop layer 18 is preferably also made of silicon oxide. A second functional layer 19 is applied to second functional etch stop layer 18 and to contact surfaces 36 of functional layer 3. Second layer 19 is preferably made of polysilicon and will have been applied in an epitactic depositing method as an epitactic polysilicon layer having a second EPI starting layer 31. Instead of polysilicon, other micromechanically processable materials may also be used that grow together with first functional layer 3.
An etching mask 20 is applied to the surface of second functional layer 19, made preferably of photoresist. This situation of the method is illustrated in
After that, second functional layer 19, in conformance with etching mask 20, is etched away down to second etch stop layer 18, using an anisotropic etching method. In addition, second functional layer 19, in the areas in which no second etch stop layer 18 has been formed, is etched away down to functional layer 3, and functional layer 3 is etched away down to first etch stop layer 17. This situation of the method is illustrated in
After etching mask 20 is removed, in one further refinement of the method, first etch stop layer 17 is undercut in determined areas, via openings in functional layer 3. Consequently, cavities 32 may be produced in base plate 2 and first functional layer 3. In this way, in addition, first functional layer 3 may be separated in determined areas from base plate 2, and may be formed as movable parts, such as valve diaphragms. This situation of the method is illustrated in
Starting from the situation of the method in
In order to form a micropump, base plate 2, using an appropriate etching mask, is patterned from underneath via an anisotropic etching method in such a way that an inlet channel 7, a ring-shaped actuator chamber 15 and outlet chamber 14 are inserted into base plate 2. Inlet channel 7, actuator chamber 15 and outlet chamber 14 border on separated surface areas of etch stop layer 17. This situation of the method is shown in
In the method step described above, starting from below, and going via inlet channel 7, actuator chamber 15 and outlet chamber 14 the surface areas of first etch stop layer 17 that are accessible through these are removed via a selective etching procedure. Because of the lateral limitation of the surface areas, the lateral underetching is also limited, since functional layer 3 is functioning as an etch stop layer.
The patterning of base plate 2, first functional layer 3 and second functional layer 19, that is made up of silicon, may be done using a silicon etching process in which etch stop layers 17, 18, that are made of silicon oxide, are used as etch stops. Subsequently, first and second etch stop layers 17, 18 are removed in the desired areas using selective etching methods. In this context, second etch stop layer 18 is removed on the exposed areas as well as at the edge areas. First etch stop layer 17 is removed in the surface areas bordering on inlet channel 7, actuator chamber 15 and bordering on outlet chamber 14. In this method step, in addition, possible process-conditioned residues of silicon are removed from the pump diaphragm. Between piston 16 and pump diaphragm 9, the first etch stop layer remains intact because of the lateral etch stops. Consequently, it is not necessary to control the etching process as to an etching time. This situation of the method is illustrated in
Starting from the situation of the method in
Subsequently, middle polysilicon layer 22 is removed using an isotropic etching method in the laid-bare areas, i.e., above inlet channel 7, above actuator chamber 15 and above outlet chamber 14. This situation of the method is illustrated in
In an additional method step, upper silicon oxide layers 23 are removed in the areas of intake valve 6, outlet valve 10 and above actuator chamber 15 via a hydrogen fluoride gas phase etching method. Alternatively, one may also use a wet chemical method in combination with a special drying method (e.g., supercritical drying in CO2).
This situation of the method is illustrated in
In the anodic bonding method, in order that cover plate 4 and bottom plate 5 shall not adhere to movable parts of first and/or second functional layer 3, 19 or to base plate 2, an anti-bonding layer 34 is applied between cover plate 4 and movable parts of first and second functional layer 3, 19. Anti-bonding layer 34 has the additional advantage, in the area of outlet valve 10, that outlet valve 10 is preloaded against cover plate 4.
Similarly, an anti-bonding layer 34 is applied between piston 16, base plate 2 and bottom plate 5. Thereby it is ensured that piston 16 remains movable for operating the pump diaphragm. Anti-bonding layer 34 is developed, for example, as a nitride layer. This situation of the method is illustrated in
Middle polysilicon layer 22 is preferably removed by a xenon difluoride (XeF2) or a chlorine trifluoride (ClF3) etching method. The additional schematically shown method in FIGS. 3A-D offers the advantage that, using the etching methods described, large underetching (lateral etching) widths may be rapidly implemented in polysilicon. Furthermore, there is no danger that first closing element 12 of the intake valve adheres to functional layer 3. By removing upper silicon layer 23, using gaseous hydrogen fluoride, adhesion is also avoided, and lateral underetching between base plate 2 and functional layer 3 is also avoided.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5096388||Mar 22, 1990||Mar 17, 1992||The Charles Stark Draper Laboratory, Inc.||Microfabricated pump|
|US5216273||Sep 19, 1991||Jun 1, 1993||Robert Bosch Gmbh||Microvalve of multilayer silicon construction|
|US6390791||Aug 19, 1998||May 21, 2002||Westonbridge International Limited||Micro pump comprising an inlet control member for its self-priming|
|US20020121529 *||Jun 15, 2001||Sep 5, 2002||Moussa Hoummady||High-performance system for the parallel and selective dispensing of micro-droplets, transportable cartridge as well as dispensing kit, and applications of such a system|
|DE19511198A1||Mar 27, 1995||Oct 2, 1996||Bosch Gmbh Robert||Structure esp. micro-dosing system prodn.|
|EP1226945A1||Jan 18, 2002||Jul 31, 2002||Xerox Corporation||Electrostatically-actuated device|
|WO2001090577A1 *||May 25, 2001||Nov 29, 2001||Westonbridge International Limited||Micromachined fluidic device and method for making same|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8528591 *||Jul 4, 2008||Sep 10, 2013||Robert Bosch Gmbh||Micro valve, method for producing a micro valve, as well as micro pump|
|US20100266432 *||Jul 4, 2008||Oct 21, 2010||Tjalf Pirk||Micro valve, method for producing a micro valve, as well as micro pump|
|International Classification||F04B43/04, F04B17/03|
|May 15, 2006||AS||Assignment|
Owner name: ROBERT BOSCH GMBH, GERMANY
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FUERTSCH, MATTHIAS;BENZEL, HUBERT;FINKBEINER, STEFAN;ANDOTHERS;REEL/FRAME:017627/0861;SIGNING DATES FROM 20051104 TO 20051128
Owner name: ROBERT BOSCH GMBH,GERMANY
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FUERTSCH, MATTHIAS;BENZEL, HUBERT;FINKBEINER, STEFAN;ANDOTHERS;SIGNING DATES FROM 20051104 TO 20051128;REEL/FRAME:017627/0861
|Dec 16, 2013||FPAY||Fee payment|
Year of fee payment: 4