|Publication number||US7846291 B2|
|Application number||US 10/444,957|
|Publication date||Dec 7, 2010|
|Filing date||May 27, 2003|
|Priority date||Dec 10, 1999|
|Also published as||US7879179, US20010003271, US20030200929, US20080069966, US20080070032|
|Publication number||10444957, 444957, US 7846291 B2, US 7846291B2, US-B2-7846291, US7846291 B2, US7846291B2|
|Original Assignee||Tokyo Electron Limited|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (201), Non-Patent Citations (8), Referenced by (9), Classifications (44), Legal Events (1)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 11-352018, filed Dec. 10, 1999, the entire contents of which are incorporated herein by reference.
A present invention relates to a processing chamber having a mounted chamber having a high-corrosion-resistant film and applied to a film forming apparatus, heat processing apparatus and etching apparatus as used in a CVD (Chemical Vapor Deposition), etc.
In response to a recent demand for a high density and high integration unit, a semiconductor device is progressed from a two-dimensional connection structure toward a three-dimensional multi-connection structure. For this reason, the burying technique for electrical interlayer connection using a contact hole for connection between an underlying circuit element and an overlying connection layer and a via hole for connection between an underlying connection layer and an overlying connection layer, and so on, is becoming important. For the burying of the contact hole and via hole, use is made of Al (aluminum), W (tungsten) or an alloy including these as a main component.
At the burying step using aluminum or aluminum alloy, a heating step and so on are involved during a manufacture. If the aluminum connection line and underlying silicon (Si) substrate are directly contacted with each other, there is a risk that there will occur a “Si-sucking-up” effect of aluminum, etc., at its boundary area and an alloy will be newly formed there. The alloy thus formed is greater in the value of a resistance and is not desirable from the standpoint of a power saving and high-speed operation demanded of a resultant device. Further, when tungsten or tungsten alloy is used as a burying layer in the contact hole, WF6 gas intrudes into the silicon substrate, thus offering a possibility of deteriorating the electrical characteristic, etc., of the device. This is, therefore, not preferable.
In order to prevent the occurrence of such a problem, a barrier layer is formed on the bottom and inner wall of the hole before forming a buried layer in the contact hole or via hole and then such a buried layer is formed. Generally, a TiN film is known as a barrier layer.
With a trend toward the high-density integration, on the other hand, a high dielectric constant material such as Ta2O5 is used as a capacitor gate material to obtain a higher capacitance without changing its scale. However, such a higher dielectric constant material is not stabler in characteristic than SiO2 conventionally used as the capacitor gate material. If a poly-Si is used on the overlying electrode, it is oxidized due to the chemical reaction after the formation of the capacitance, thus failing to manufacture a device element of stable characteristics. It is, therefore, necessary that a less-oxidized TiN film be used as an overlying electrode.
The TiN film has been formed by using a physical vapor deposition (PVD) technique and a demand has been made for a finer and higher integration device in particular. In addition, the design rules are particularly stringent. Hence, in PVD that can hardly achieve high coverage. Therefore, a chemical vapor deposition (CVD) technique is used by which it is possible to form a TiN film of a better quality. Stated in more detail, a thermal CVD is used, in which TiCl4 and NH3 (ammonia) or MMH (monomethylhydrazine) is applied, as a reaction gas, to a heated substrate. In the case where the TiN film is formed by such a thermal CVD, chlorine is liable to be retained in a formed film, thus presenting a problem. The retaining of such chlorine results in a higher specific resistance and it is not possible to obtain a proper characteristic if the film is applied to an electrode overlying a capacitor.
Further, the TiN film, being a columnar crystal, is liable to be boundary-diffused and involves a lower barrier characteristic. The lower barrier characteristic presents a problem in the case where the TiN film is used as a barrier layer for a Cu connection line or an oxygen diffusion barrier for Ta2O5 connection line of an electrode overlying the capacitor. That is, a problem occurs due to the corrosion of the Cu connection line by the residual chlorine or a lowering of a capacitance of Ta2O5 by the diffusion of oxygen.
An amount of Cl in the formed film can be indeed reduced by making a film formation temperature higher. However, a high temperature process is not preferable due to a problem, such as thermal resistance and the corrosion, of a connection line material such as Cu and Al.
As one technique of plasma CVD, there is an ICP (Inductively Coupled Plasma)—CVD according to which an antenna member such as a coil is provided around a bell jar (chamber). By applying a high frequency power to it, an inductive electromagnetic field is created to provide plasma. In the case where the TiN film is formed using this technique, the formed TiN film becomes low-resistance and low in chlorine, and even a film formed at a relatively low temperature is made low in an amount of residual chlorine.
Although a chamber made of quartz or alumina is used in the formation of the TiN film by the ICP-CVD, it is not good in a plasma-resistant characteristic and a corrosion resistance to an etching gas such as ClF3 used for cleaning the interior of the apparatus after the formation of the TiN film is not better, thus presenting a problem.
Further, in this type of CVD film formation apparatus, a deposit is formed on the inner wall of the chamber due to the introduction of a process gas from above the chamber and a foreign deposit is liable to be formed. In the case of forming the TiN film, the plasma created is attenuated due to the deposit of a conductive film on the inner wall of the upper chamber, thus making it difficult to form a film.
An object of the present invention is to provide a processing apparatus having a chamber applied to a film forming apparatus, heat processing apparatus and etching apparatus and having a high-corrosion-resistant property and less liable to deposit a product by a process gas or a product, such as an etching product, on its inner wall thereof.
The thus constructed processing apparatus has a mounted chamber holding a to-be-processed substrate and having members for work-processing the substrate by any of heating, plasma, process gas or a combination thereof, in which a film of Al2O3 and Y2O3 is formed on the inner wall surface of the chamber and on the exposed surfaces of the members within the chamber, the Al2O3/Y2O3 weight ratio being above 0.5. The Al2O3/Y2O3 weight ratio is in a range above 0.5 but below 4. The thickness of the formed film is above 50 μm.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate presently preferred embodiments of the invention, and together with the general description given above and the detailed description of the preferred embodiments given below, serve to explain the principles of the invention.
The embodiments of the present invention will be described below with reference to the accompanying drawings.
The film forming apparatus of the present invention is directed to forming, for example, a TiN thin film. The film forming apparatus 10 includes a chamber 11 having a lower chamber 11 a and upper chamber 11 b formed as an integral unit in a hermetically sealable way. The upper chamber 11 b is made smaller in diameter than the lower chamber 11 a. The lower chamber 11 a is comprised of an electric conductor 12, such as aluminum, whose surface is anadigation processed for example. The upper chamber 11 b comprises a base material 13 of, for example, a ceramic material and a sprayed film 14. The film 14 may contain oxide of Y, Sc, La, Ce, Eu, Dy2O3 or the like, or fluoride of one of these metals. The film 14 may be made of a compound of a III-b element of the periodic table, such as Y2O3. Needless to say, the film 14 may be made of such a compound and any other material. In the present invention, the film 14 is a sprayed film that substantially comprises Al2O3 and Y2O3. As the material of the chamber use can be made of ceramic (Al2O3, SiO2, MN etc.,), aluminum or stainless steel, metal or metal alloy.
A weight ratio of Al2O3/Y2O3 of the sprayed film 14 is preferably 0.5 to 4. It is to be noted that
The ceramics of the base material 13 may be Al2O3, SiO2, such as silica glass and quartz, AlN, alternatively, rigid plastic may be used, and, here, the sprayed film as set out above is not formed on the inner wall of the upper chamber 11 b but it may be formed there.
On the inner bottom of the lower chamber 11 a an insulating plate 15 of ceramic, etc., and support base 16 are provided and a substantially cylindrical susceptor 17 is provided on the support base 16 to place a semiconductor wafer (hereinafter referred to as a wafer) as a to-be-processed object on it.
A coolant chamber 18 is provided in the interior of the support base 16 to receive the coolant via a coolant introducing tube 19. The coolant is discharged out of a discharge tube 20. Through such a circulation, a cold is conducted through the susceptor 17 to the wafer W. A heating element 21 is buried in the susceptor 17 to heat the wafer W to a predetermined temperature by supplying power from a power source 22. To the power source 22, a controller 23 is connected. And the temperature of the wafer W is controlled by a cold of the coolant and heat of the heating element.
At the susceptor 17, an electrostatic chuck 24 is provided which is substantially the same in configuration as the wafer W. The electrostatic chuck 24 is so formed as to have an electrode 26 buried in an insulating material 25. The wafer W is electrostatically attracted by a Coulomb force, etc., generated by applying a DC voltage from a DC power source 27 to the electrode 26. At the outer peripheral portion of an upper surface of the electrostatic chuck 24 an area for achieving the uniformity of a film formation, for example, a focusing ring 28 is provided to surround the wafer W. The above-mentioned sprayed film 14 is formed on those exposed surfaces of the support base 16, susceptor 17, electrostatic chuck 24 and focusing ring 28 within the chamber.
A shower head member 30 is provided above the chamber 11 b. In the shower head member 30, many gas discharge holes 30 a (Ar, ClF3), 30 b (Ar, TiCl4) and 30 c (NH3) are alternately formed to discharge gases in a down direction within the chamber. The pipes of a gas supply system 40 are connected to the shower head member 30. That is, as will be set out below, a pipe 55 for supplying a gas (Ar, ClF3) is connected to the gas discharge holes 30 a, a pipe 56 for supplying a gas (Ar, TiCl4) is connected to the gas discharge holes 30 b and a pipe 57 for supplying a gas (NH3) is connected to the gas discharge holes 30 c. By doing so, the respective gases are introduced through the shower head member 30 into the upper chamber 11 b.
The shower head member 30 is comprised of, for example, a three-layers-stacked structure of three gas dispersion plate and has discharge plate having the gas discharge holes. The respective gas discharge plate has a groove and holes for allowing one kind of gas to be dispersed evenness to a whole gas discharge surface area in the head. In particular, the discharge holes of the gas dispersion plate are so formed as not be overlapped with the discharge holes of the other gas dispersion plate. Though being not illustrated in the Figure, the gas discharge holes are arranged in a matrix array upon viewing the gas discharge hole surface side from below. And a post-mixing system is adopted according to which TiCl4 gas and NH3 gas are discharged from the alternately formed different discharge holes and these gases are mixed as a process gas after being discharged.
The gas supply system 40 has a ClF3 supply source 41 for supplying ClF3 as a cleaning gas, Ar supply sources 42 and 43 for supplying Ar, a TiCl4 supply source 44 for supplying TiCl4 as a process gas and an NH3 supply source 45 for supplying NH3 as a process gas. A gas line 46 is connected to the ClF3 supply source 41, gas lines 47 and 48 are connected to the Ar supply sources 42 and 43, respectively, a gas line 49 is connected to the TiCl4 supply source 44 and a gas line 50 is connected to the NH3 supply source 45. A valve 51 (51 a, 51 b) and mass flow controller 52 are provided at these gas lines.
Into the gas line 47 extending from the Ar supply source 42, the gas line 46 extending from the ClF3 supply source 41 is joined and the gas line 46 extending form the ClF3 supply source 41 is joined. The gas line 46 extending form the ClF3 supply source 41 is joined into a gas line 53. By opening the valve 51 provided on the gas line 46, ClF3 serving as a cleaning gas is passed through the gas line 46 and pipe 53 and reaches the shower head 30 to allow it to be introduced via the gas discharge holes 30 a into the upper chamber 11 b. Needless to say, there is the case where Ar alone is supplied from the Ar supply source 42.
Into the gas line 48 extending from the Ar supply source 43, the gas line 49 extending from the TiCl4 supply source 44 is joined. TiCl4 gas passed through the gas line 49 and pipe 54 is carried by the argon gas and reaches the shower head 30. The TiCl4 gas is introduced from the gas discharge holes 30 b into the chamber 11.
Further, the NH3 gas is supplied from the NH3 supply source 45 past the gas line 50 and pipe 55 to the shower head 30 and introduced from the gas discharge holes 30 c into the upper chamber 11 b. It is to be noted that, in place of NH3, monomethylhydrazine (MMH) may be used.
At the bottom wall of the lower chamber 11 a the exhaust tube 61 is provided which is connected to an exhaust apparatus 62 including a vacuum pump. By operating the exhaust apparatus 62 it is possible to reduce pressure in the chamber 11 to a predetermined vacuum level. A gate valve 63 is provided at the sidewall of the lower chamber 11 a and, in its open state, allows the wafer W to be passed into and out of an outside, for example, an adjacent load lock chamber, not shown.
A coil 65 as an antenna member is wound around the upper chamber 11 b and a high frequency power source 66 is connected to the coil 65. The high frequency power source 66 has a frequency of, for example, 13.65 MHz. By supplying a high frequency power from the high frequency power source 66 to the coil 65 an inductive electromagnetic field is created within the upper chamber 11 b. Further, a cooling mechanism 67 using a cooling medium such as a coolant and a cooling source 68 for driving this are provided.
With this apparatus, the gate valve 63 is opened and, in its open state, a wafer W is loaded into the chamber 11 and placed onto the electrostatic chuck 24. The wafer W is attracted to the electrostatic chuck 24 by applying a voltage to the electrode 26. Thereafter, the gate valve 63 is closed, and the interior of the chamber 11 is evacuated by the exhaust system 62 to a predetermined vacuum level. Then, while introducing an Ar gas from the Ar supply source 42 into the chamber 11, a high frequency power is supplied from the high frequency power source 66 to the coil 65 to create an inductive electromagnetic field within the upper chamber 11 b. Plasma is generated under this high frequency electric field.
Then, a predetermined amount of NH2 gas and TiCl4 gas are introduced into the upper chamber 11 b from the NH3 supply source 45 and TiCl4 supply source 44 to generate plasma and are brought to the lower chamber 11 a side. By this plasma, a TiN thin film is formed onto the wafer W. At this time, the formation of the TiN thin film is effected at a temperature of about 300 to 450° C. by controlling an output to the heating element 21 and an amount of flow of a coolant. After the film formation, the wafer W is unloaded out of the chamber 11 and the ClF3 gas serving as a cleaning gas is introduced into the chamber 11 to clean the interior of the chamber.
In the above-mentioned processing, the inner wall of the upper chamber 11 b is attacked by the plasma generated in the upper chamber 11 b and exposed to the ClF3 gas (etching gas) at a cleaning time. Under such an environment, no adequate corrosion resistance was not obtained in a conventional chamber made of quartz and Al2O3 with the resultant disadvantage of a short life. According to the present invention, however, use is made mainly of Al2O3 and Y2O3 and a high-corrosion-resistant sprayed film 14 having Al2O3/Y2O3 weight ratio of above 0.5 is formed on the inner wall of the upper chamber 11 b. Hence, even if being contacted with plasma and cleaning gas, the inner wall of the chamber is less likely to be etched and ensures a longer service life.
The sprayed film 14 has insulating property because it contains 6 a III-a group element of the periodic table. Use can be made of, as the basic material, various kinds of materials such as ceramic herein used, aluminum, stainless steel, rigid plastic (engineering plastic) etc. Further, the sprayed film 14 is lower in cost than a sintered product and has a greater merit of forming a film for a short period of time. It is to be noted that such sprayed film may be formed on the inner wall of the lower chamber 11 a and can enhance a corrosion resistance of the lower chamber 11 a.
An explanation will be made below about the results of experiments by which the corrosion resistance of the sprayed film is confirmed. Here, a parallel flat type plasma etching apparatus was used by way of example. A sprayed film was irradiated, with plasma, at an intra-chamber pressure of 133.3 Pa (1000 m Torrs) and a gas flow rate of CF4:Ar:O2=95:950:10 (a total flow rate of 1.055 L/min (1055 sccm)) for 20 hours through the application of a high frequency power of 13.56 MHz at 1300 W.
Surface-polished samples were used, each comprised a 20×20×2 mm aluminum base, a 200 μm-thick first sprayed film made of Al2O3 and Y2O3 and formed on the aluminum base, and a 200 μm-thick second sprayed film made of Y2O3, Sc2O3, ScF3, YF3, La2O3, CeO2, Eu2O3 and Dy2O3. Stated in more detail, as the sprayed film made of Al2O3 and Y2O3, a sprayed film having a weight ratio of Al2O3/Y2O3=0.5 and a film sprayed with a 99.9%-purity YAG (Y3Al5O12: a weight ratio of Al2O3/Y2O3=0.75) was used. As shown in
It was confirmed that, as shown in
Then, with an Al2O3/Y2O3 weight ratio set to 0.43, 0.66, and 1.5, these mixed powders were sprayed onto an aluminum basic material to form a sprayed film.
In the same way as set out above, these samples were tested for corrosion resistance to plasma. The evaluation of the etched amount was made by measuring its depth at a central portion of the above-mentioned 10 mm square portion except the edge portion. The result is as shown in
On the other hand, the YAG sprayed film evaluated for the corrosion resistance at the first test was substantially amorphous as shown in
From this it may be considered that the corrosion resistance is improved by making the sprayed film amorphous.
A second embodiment of the present invention will be explained below.
In this apparatus, an upper chamber 11 c is provided above a lower chamber 11 a and it is made of a ceramic material, such as Al2O3, SiO2 and AlN. At a shower head member 70 of pipe type provided at the top of the upper chamber 11 c, gas discharge holes 70 a, 70 b and 70 c are alternately formed to discharge gases toward a lower zone within the chamber. A gas supply system 40 a comprises gas supply sources and valves 51 and mass flow controllers 52 as in the case of the gas supply system 40 as set out above. This embodiment is different from the first embodiment with respect to a pipe array from the gas supply system 40 to the shower head member 70.
That is, the pipes of the gas supply system 40 are connected to the shower head member 70. As will be set out below, a pipe 81 for supplying an Ar gas and ClF2 gas is connected to the gas discharge holes 70 a, a pipe 82 for supplying a TiCl4 gas and Ar gas is connected to the gas discharge holes 70 b, and a pipe 83 for supplying an NH3 gas is connected to the gas discharge holes 70 c. Pipe-like gas discharge members 71 and 72 extending from the upper chamber 11 c toward the upper zone of the lower chamber 11 a are connected to the gas discharge holes 70 b and 70 c. A gas discharge hole 71 a is formed in the gas discharge member 71 and a gas discharge hole 72 a is formed in the gas discharge member 72.
A gas line 47 extending from an Ar supply source 42 and gas line 46 extending from a ClF3 supply source 41 are connected to the pipe 81. The Ar gas and ClF3 gas are introduced from the pipe 81 into the upper chamber 11 c via the gas discharge hole 70 a, noting that the Ar gas alone is sometimes supplied there.
A gas line 49 extending from a TiCl4 supply source 44 and gas line 48 extending from an Ar supply source 43 are connected to the pipe 82. The TiCl4 gas using an Ar gas as a carrier gas is introduced from the pipe 82 through the gas discharge hole 70 b and gas discharge hole 71 a in the gas discharge member 71 into the upper zone of the lower chamber 11 a. A gas line 50 extending from an NH3 supply source 43 is connected to the pipe 83 and the NH3 gas is introduced from the pipe 83 through a gas discharge hole 70 c and gas discharge hole 72 a in the gas discharge member 72 into the upper zone of the lower chamber 11 a.
Thus, the TiCl4 gas and NH3 gas are supplied directly into the upper zone of the lower chamber 11 a without passing through the upper chamber 11 c. After so discharged, these gases are mixed within the lower chamber 11 a. The gas line 46 extending from the ClF3 supply source 41 is joined into the gas line 81 and, by opening a valve 51 on the gas line 46, the ClF3 as a cleaning gas is supplied past the gas line 46 and then the pipe 81 to the shower head 70 to allow the ClF3 gas to be introduced via the discharge hole 70 a into the upper chamber 11 c.
In the thus structured CVD apparatus, a wafer W is loaded into the chamber 11 and the Ar gas as a plasma generation gas is introduced via the gas discharge holes 70 a in the shower head into the upper chamber 11 c. By supplying a high frequency power from a high frequency power source 66 to a coil 65, an inductive electromagnetic field is created within the upper chamber 11 c to generate a plasma of the Ar gas.
On the other hand, the TiCl4 gas and NH3 gas serving as a process gas are directly introduced into the upper zone of the lower chamber 11 a via the discharge members 71 and 72 and these gases are excited by the plasma of the Ar gas diffused from the upper chamber 11 c into the lower chamber 11 a. By doing so, the gases generate a plasma at the upper zone of the lower chamber 11 a, so that a reaction occurs on the surface of the wafer W to form a TiN thin film on the wafer.
Even in this embodiment, the film-formed semiconductor wafer is externally unloaded out of the chamber 11 and a ClF3 gas serving as a cleaning gas is introduced into the chamber 11 to clean the inner wall of the chamber.
In this embodiment, as set out above, the Ar gas alone for plasma generation is supplied into the upper chamber 11 c and the TiCl4 gas and NH3 gas, serving as a process gas, are supplied directly into the lower chamber 11 a via the gas discharge members 71 and 72, so that the process gas almost never reaches the inner wall of the upper chamber 11 c. As a result, almost no deposit resulting from the process gas is formed on the inner wall of the upper chamber 11 c.
Thus, unlike the prior art technique, a conductive film is not deposited, by the process gas, on the inner wall of the chamber and it is never difficult to form a film under the attenuation of plasma involved.
A third embodiment of the present invention will be described below.
This embodiment constitutes a combined structure of a lower chamber 11 a similar to that in the first embodiment shown in
In the third embodiment, a high-corrosion-resistant sprayed film 14 is formed on the inner wall of the upper chamber 11 c and, even if plasma and cleaning gas are contacted with the inner wall, is hard to be etched to provide a longer service life to the chamber. In addition, almost no deposit resulting from the process gas is formed on the upper chamber 11 b. As a result, unlike the prior art technique, there is no inconvenience of the plasma being attenuated by a conductive film deposited on the inner wall of the chamber and hence no difficulty is encountered in the formation of a film.
It is to be noted that, even in the second and third embodiments, a sprayed film may be formed on the inner wall of the lower chamber 11 a and, by forming such a sprayed film, it is possible to improve a high corrosion resistance to the lower chamber 11 a.
A fourth embodiment of the present invention will be explained below.
The apparatus structure of this embodiment comprises a combination of a lower chamber 11 a similar to that of the above-mentioned first embodiment and an upper chamber 11 d different in gas supply position above the lower chamber 11 a. In this embodiment, the same reference numerals are employed to designate parts or elements corresponding in structure to those shown in
In this film forming apparatus, a shower head 81 for supplying a process gas into a chamber 11 is formed in an annular shape between the upper chamber 11 d and the lower chamber 11 a. A high corrosion-resistant and insulating sprayed film 14 is formed on the whole inner surface of the upper chamber 11 d. A gas supply system 40 is similar in structure to that of the first embodiment but a ClF3 gas serving as a cleaning gas and Ar gas can be introduced from the top side and sidewall side of the upper chamber lid by a switching operation of the valves 82 and 83.
By this structure, a gas supplied from the gas supply system 40 is discharged and directed toward a central area at the upper zone of the lower chamber 11 a and diffused onto a wafer W. In this embodiment, it is possible to obtain an effect similar to that of the above-mentioned embodiments. And a deposit resulting from a process gas is almost hardly formed on the inner wall of the upper chamber 11 d. Further, a sprayed film 14 is formed on the inner wall of the upper chamber and, even if plasma and cleaning gas are contacted with the inner wall, etching is less liable to occur and it is possible to extend the service life of the chamber.
The shower head 81 is comprised of a ring-type three-layered structure and so designed as to collect gases in the respective outer head sections into a middle-layer head section. That is, ring-like diffusion channels 84 a, 85 a and 86 a are provided in the head sections 84, 85 and 86 to allow the process gas to be introduced into the chamber. A plurality of discharge holes 84 b (NH3 gas), discharge holes 85 b (Ar gas) and discharge holes 86 b (TiCl4 gas or ClF3 gas) leading to the diffusion channels 84 a, 85 a and 86 a are provided in a middle layer of the head section 85 in one array to allow a corresponding gas to be discharged in a horizontal direction. For example, these discharge holes are so arranged as to allow different kinds of process gases to be sequentially discharged with an argon gas in between.
In the practical example shown in
This shower head 90 is of a ring-type three-layered structure such that ring-like diffusion channels 91 a, 92 a and 93 a are provided in the corresponding head sections 91, 92 and 93 to allow a process gas to be introduced into the chamber. A plurality of discharge holes 91 b (NH3 gas), discharge holes 92 b (Ar gas) and discharge holes 93 b (TiCl4 gas or ClF3 gas) leading to the diffusion channels 91 a, 92 a and 93 a are formed in the corresponding head sections to allow these gases to be discharged in a horizontal direction.
Various practical structures as shown in
Even in these embodiments it is possible to obtain the same advantage as set out in connection with the above-mentioned embodiment.
The shower heads for introducing the gases into the chamber can be variously changed or modified in the embodiment of the present invention.
Although, in the above-mentioned embodiment, a plurality of members are used to introduced the process gas into the chamber 11, as shown in
As shown in
Although, in the above-mentioned respective embodiment, the formation of the TiN thin film has been explained, the present invention is not restricted thereto and other films may be formed. In the case where a film is formed using a Ti-containing material or Si-containing material, a Cl-containing gas is used as a feed gas and the present invention is effective to the formation of a film using these materials. As such materials, use is made of, for example, TiN, Ti, TiSiN, SiN, Ta, TaN, Ta2O5, PZT, BST, RuO and ZrO; a LOWK material, such as SiOF recently used as an insulating interlayer of a low dielectric constant; and Ta, TaN used as a barrier of Cu and SiN used as a corrosion stop.
Although, in the above-mentioned embodiment, use is made of the ICP-CVD apparatus using a coil as an antenna, if the plasma CVD apparatus uses a chamber and bell jar, it can use a TCP (Transformer Coupled Plasma) using a spiral type antenna and it is also possible to use a helicon wave plasma processing apparatus using a helicon wave.
Those applied forms of chambers provided in the processing apparatus according to the above-mentioned embodiments will be explained below with reference to
An upper chamber 11 f shown in
The heat processing apparatus 101 can perform an anneal process for promoting recrystallization of a formed film and a thermal oxidation process.
This heat processing apparatus 101 has a susceptor 103 located within a chamber 102 to support a wafer W, a wafer lifting mechanism 105 provided below the susceptor 103 to allow the wafer W to be lifted up by a plurality of lift pins 104 at a transfer of the wafer W, a heater 106 provided in the susceptor 103 and a gas flow chamber 107 for hermetically supplying a gas such as an Ar gas and oxygen gas onto the wafer W. A sprayed film 14 of Al2O3/Y2O3 is formed on the inner surface of the gas flow chamber 107 and on the surface of a guide section 108 provided on the susceptor 103 to guide a wafer mounting position and, by doing so, it is possible to obtain the same effect as in the above-mentioned respective embodiments.
The ashing apparatus comprises a hermetically sealable chamber 111 having a lower chamber 111 a and upper chamber 111 b, a susceptor 112 on which a wafer W is placed, a heater 113 provided in the susceptor 112 to heat the wafer W, a gas supply system, not shown, for supplying a process gas such as oxygen, and an evacuation apparatus for evacuating the interior of the chamber 111.
In this ashing apparatus, a high-corrosion-resistant sprayed film is formed on the whole inner surface of the upper chamber 111 b and on the sidewall of the lower chamber 111 a except the inner bottom surface and, by doing so, it is possible to obtain the same effect as in the above-mentioned respective embodiment.
This etching apparatus comprises a hermetically sealable chamber 121, a process gas supplying shower head provided within the chamber 121 and functioning as an upper electrode for plasma generation, a susceptor 123 allowing a wafer W to be placed and functioning as an upper electrode for plasma generation, a process gas supply system 126 having a plurality of valves 124 and a plurality of process gas sources 125, a high frequency power source 127 for applying a high frequency power to the shower head 122, a shield ring 128 provided around the shower head 122, an electrostatic chuck system 129 provided on the top surface of the susceptor 123, a focusing ring 130 provided at an outer peripheral portion of the electrostatic chuck 129 to surround the wafer W, a gate valve 131 provided on the sidewall of the chamber 121 to allow the wafer to be loaded and unloaded into and out of the chamber 121, and a deposition shield 132 provided on the inner side surface of the chamber 121.
A sprayed film 14 is formed, as the above-mentioned case, on exposed surfaces of the susceptor 123, focusing ring 130, shower head 122 and shield ring 128 within the chamber and further on the inner upper surface and inner bottom surface of the chamber 121.
It is to be noted that the sprayed film formed in the above-mentioned respective embodiments need only have a thickness of above 50 μm. In the case where the thickness of the sprayed film is less than 50 μm, the insulating resistance and withstand voltage are lower. This is based on our empirically obtained data showing a relation of a breakdown voltage to the film thickness shown in
Even in this embodiment, the same effect as set out in connection with the above-mentioned embodiment can be obtained by forming the sprayed film.
Although, in the above-mentioned respective embodiments, the semiconductor wafer as a substrate has been explained by way of example, the present invention is not restricted thereto and it may also be applied to the formation of a glass substrate for a liquid crystal display device (LCD).
According to the above-mentioned respective embodiments, a sprayed film of substantially Al2O3/Y2O3 whose weight ratio is above 0.5 is formed on the inner wall of the chamber and, by doing so, the chamber is less liable to be etched under a plasma and cleaning gas due to the presence of the high-corrosion resistant sprayed film. Thus the present invention can be preferably applied to the film formation, etching, ashing and heat treatment on a less-etching thermal sprayed film of the chamber.
Further, since the gas supply system supplies a process gas near the upper zone of a wafer within the chamber, the gas hardly reaches the inner wall of the chamber and almost no product is deposited on the wall. As a material for the chamber, use can be made of a ceramic (Al2O3, SiO2, AlN, etc.), aluminum, stainless steel, metal or alloy.
Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4310390||Jun 27, 1980||Jan 12, 1982||Lockheed Corporation||Protective coating process for aluminum and aluminum alloys|
|US4357387||Jan 12, 1982||Nov 2, 1982||Subtex, Inc.||Flame resistant insulating fabric compositions prepared by plasma spraying|
|US4469619||Sep 30, 1982||Sep 4, 1984||Sony Corporation||Method of manufacturing a green phosphor|
|US4593007||Dec 6, 1984||Jun 3, 1986||The Perkin-Elmer Corporation||Aluminum and silica clad refractory oxide thermal spray powder|
|US4612077||Jul 29, 1985||Sep 16, 1986||The Perkin-Elmer Corporation||Electrode for plasma etching system|
|US4649858||Oct 9, 1985||Mar 17, 1987||Sumitomo Metal Industries, Ltd.||Repairing apparatus for furnace wall|
|US4842683||Apr 25, 1988||Jun 27, 1989||Applied Materials, Inc.||Magnetic field-enhanced plasma etch reactor|
|US4877757||Dec 7, 1988||Oct 31, 1989||Texas Instruments Incorporated||Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma|
|US5000113||Dec 19, 1986||Mar 19, 1991||Applied Materials, Inc.||Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process|
|US5074456||Sep 18, 1990||Dec 24, 1991||Lam Research Corporation||Composite electrode for plasma processes|
|US5126102||Mar 12, 1991||Jun 30, 1992||Kabushiki Kaisha Toshiba||Fabricating method of composite material|
|US5180467||Aug 10, 1990||Jan 19, 1993||Vlsi Technology, Inc.||Etching system having simplified diffuser element removal|
|US5302465||Oct 26, 1992||Apr 12, 1994||The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration||Plasma sprayed ceramic thermal barrier coating for NiAl-based intermetallic alloys|
|US5334462||Jun 11, 1993||Aug 2, 1994||United Technologies Corporation||Ceramic material and insulating coating made thereof|
|US5362335||Mar 25, 1993||Nov 8, 1994||General Motors Corporation||Rare earth coating process for aluminum alloys|
|US5366585||Jan 28, 1993||Nov 22, 1994||Applied Materials, Inc.||Method and apparatus for protection of conductive surfaces in a plasma processing reactor|
|US5367838||Mar 21, 1994||Nov 29, 1994||Ice Blast International, Inc.||Particle blasting using crystalline ice|
|US5423936 *||Oct 19, 1993||Jun 13, 1995||Hitachi, Ltd.||Plasma etching system|
|US5426310||Jun 1, 1994||Jun 20, 1995||Sony Corporation||Method of heat-treating an oxide optical crystal and a heat treatment apparatus for carrying out the same|
|US5484752||Nov 8, 1994||Jan 16, 1996||Ube Industries, Ltd.||Ceramic composite material|
|US5489449||Jul 18, 1994||Feb 6, 1996||Nisshin Flour Milling Co., Ltd.||Coated particles of inorganic or metallic materials and processes of producing the same|
|US5494713||Feb 3, 1995||Feb 27, 1996||Tokyo Electron Limited||Method for treating surface of aluminum material and plasma treating apparatus|
|US5521790||May 12, 1994||May 28, 1996||International Business Machines Corporation||Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization|
|US5522936||Aug 28, 1995||Jun 4, 1996||Anelva Corporation||Thin film deposition apparatus|
|US5534356||Apr 26, 1995||Jul 9, 1996||Olin Corporation||Anodized aluminum substrate having increased breakdown voltage|
|US5551190||Mar 24, 1994||Sep 3, 1996||Ohi Seisakusho Co., Ltd.||Slide door driving system|
|US5556501||Apr 1, 1993||Sep 17, 1996||Applied Materials, Inc.||Silicon scavenger in an inductively coupled RF plasma reactor|
|US5614055||Aug 27, 1993||Mar 25, 1997||Applied Materials, Inc.||High density plasma CVD and etching reactor|
|US5637237||Jun 7, 1995||Jun 10, 1997||International Business Machines Corporation||Method for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability|
|US5641375||Aug 15, 1994||Jun 24, 1997||Applied Materials, Inc.||Plasma etching reactor with surface protection means against erosion of walls|
|US5651723||Apr 13, 1994||Jul 29, 1997||Viratec Thin Films, Inc.||Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings|
|US5680013||Mar 15, 1994||Oct 21, 1997||Applied Materials, Inc.||Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces|
|US5725960||Dec 24, 1993||Mar 10, 1998||Nippon Zeon Co., Ltd.||Molded articles having hard coat layer and method for producing same|
|US5759360||Mar 13, 1995||Jun 2, 1998||Applied Materials, Inc.||Wafer clean sputtering process|
|US5798016||Mar 8, 1994||Aug 25, 1998||International Business Machines Corporation||Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability|
|US5820723||Jun 5, 1996||Oct 13, 1998||Lam Research Corporation||Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support|
|US5834070||Apr 3, 1997||Nov 10, 1998||International Center For Electron Beam Technologies Of E.O. Paton Electric Welding Institute||Method of producing protective coatings with chemical composition and structure gradient across the thickness|
|US5851343||May 16, 1997||Dec 22, 1998||Taiwan Semiconductor Manufacturing Company, Ltd.||Protective shield around the inner edge of endpoint window in a plasma etching chamber|
|US5868848||Jun 6, 1996||Feb 9, 1999||Tokyo Electron Limited||Plasma processing apparatus|
|US5879575||Nov 21, 1997||Mar 9, 1999||Applied Materials, Inc.||Self-cleaning plasma processing reactor|
|US5882411||Oct 21, 1996||Mar 16, 1999||Applied Materials, Inc.||Faceplate thermal choke in a CVD plasma reactor|
|US5885356||Dec 22, 1995||Mar 23, 1999||Applied Materials, Inc.||Method of reducing residue accumulation in CVD chamber using ceramic lining|
|US5885402||Jul 17, 1996||Mar 23, 1999||Applied Materials||Diagnostic head assembly for plasma chamber|
|US5891253||Oct 12, 1995||Apr 6, 1999||Applied Materials, Inc.||Corrosion resistant apparatus|
|US5891350||Jun 20, 1996||Apr 6, 1999||Applied Materials, Inc.||Adjusting DC bias voltage in plasma chambers|
|US5892278||May 21, 1997||Apr 6, 1999||Dai Nippon Printingco., Ltd.||Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same|
|US5894887||Nov 30, 1995||Apr 20, 1999||Applied Materials, Inc.||Ceramic dome temperature control using heat pipe structure and method|
|US5895586||May 17, 1995||Apr 20, 1999||Hitachi, Ltd.||Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum|
|US5900064||May 1, 1997||May 4, 1999||Applied Materials, Inc.||Plasma process chamber|
|US5902763 *||Jan 17, 1996||May 11, 1999||Ube Industries, Inc.||Fused ceramic composite|
|US5904778||Jul 26, 1996||May 18, 1999||Applied Materials, Inc.||Silicon carbide composite article particularly useful for plasma reactors|
|US5911852 *||Jun 14, 1996||Jun 15, 1999||Sumitomo Metal Industries Limited||Plasma processing apparatus|
|US5919332||Jun 6, 1996||Jul 6, 1999||Tokyo Electron Limited||Plasma processing apparatus|
|US5925228||Jan 9, 1997||Jul 20, 1999||Sandia Corporation||Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material|
|US5944902||Jun 16, 1998||Aug 31, 1999||Applied Materials, Inc.||Plasma source for HDP-CVD chamber|
|US5948521||Aug 7, 1996||Sep 7, 1999||Siemens Aktiengesellscahft||Thermally conductive, electrically insulating connection|
|US5952054||Feb 27, 1997||Sep 14, 1999||Nippon Steel Hardfacing Co., Ltd.||Method of forming spray deposit and integrated sealer layer|
|US5952060||Jun 14, 1996||Sep 14, 1999||Applied Materials, Inc.||Use of carbon-based films in extending the lifetime of substrate processing system components|
|US5955182||Feb 4, 1997||Sep 21, 1999||Kabushiki Kaisha Toshiba||Heat resisting member and its production method|
|US5968377||May 22, 1997||Oct 19, 1999||Sekisui Chemical Co., Ltd.||Treatment method in glow-discharge plasma and apparatus thereof|
|US5985102||Aug 6, 1997||Nov 16, 1999||Micron Technology, Inc.||Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using|
|US5994662||May 29, 1997||Nov 30, 1999||Applied Materials, Inc.||Unique baffle to deflect remote plasma clean gases|
|US6068729||Sep 3, 1998||May 30, 2000||Applied Materials, Inc.||Two step process for cleaning a substrate processing chamber|
|US6073449||Jun 24, 1997||Jun 13, 2000||Technova Inc.||Thermoelectric apparatus|
|US6079356||Feb 13, 1998||Jun 27, 2000||Applied Materials, Inc.||Reactor optimized for chemical vapor deposition of titanium|
|US6082444||Aug 20, 1997||Jul 4, 2000||Tocalo Co., Ltd.||Heating tube for boilers and method of manufacturing the same|
|US6096161||Nov 3, 1998||Aug 1, 2000||Samsung Electronics Co., Ltd.||Dry etching apparatus having means for preventing micro-arcing|
|US6106625||Feb 13, 1998||Aug 22, 2000||Applied Materials, Inc.||Reactor useful for chemical vapor deposition of titanium nitride|
|US6108189||Nov 6, 1997||Aug 22, 2000||Applied Materials, Inc.||Electrostatic chuck having improved gas conduits|
|US6110287||Apr 28, 1997||Aug 29, 2000||Tokyo Electron Limited||Plasma processing method and plasma processing apparatus|
|US6120640||Dec 19, 1996||Sep 19, 2000||Applied Materials, Inc.||Boron carbide parts and coatings in a plasma reactor|
|US6120955||Jun 26, 1998||Sep 19, 2000||Minolta Co., Ltd.||Substrate for photosensitive member, photosensitive member, production method thereof and image forming apparatus using the photosensitive member|
|US6123791||Jul 29, 1998||Sep 26, 2000||Applied Materials, Inc.||Ceramic composition for an apparatus and method for processing a substrate|
|US6123804||Feb 22, 1999||Sep 26, 2000||Applied Materials, Inc.||Sectional clamp ring|
|US6129808||Sep 25, 1998||Oct 10, 2000||Lam Research Corporation||Low contamination high density plasma etch chambers and methods for making the same|
|US6139983||Jun 23, 1998||Oct 31, 2000||Ngk Insulators, Ltd.||Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same|
|US6143646||Jun 3, 1997||Nov 7, 2000||Motorola Inc.||Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation|
|US6170429||Sep 30, 1998||Jan 9, 2001||Lam Research Corporation||Chamber liner for semiconductor process chambers|
|US6176969||Apr 22, 1999||Jan 23, 2001||Samsung Electronics Co., Ltd.||Baffle plate of dry etching apparatus for manufacturing semiconductor devices|
|US6178919||Dec 28, 1998||Jan 30, 2001||Lam Research Corporation||Perforated plasma confinement ring in plasma reactors|
|US6182603||Jul 13, 1998||Feb 6, 2001||Applied Komatsu Technology, Inc.||Surface-treated shower head for use in a substrate processing chamber|
|US6210486||Feb 8, 2000||Apr 3, 2001||Tokyo Electron Limited||CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed|
|US6221202||Apr 1, 1999||Apr 24, 2001||International Business Machines Corporation||Efficient plasma containment structure|
|US6246479||Dec 23, 1999||Jun 12, 2001||Lj Laboratories, L.L.C.||Integrated spectrometer assembly and methods|
|US6264788||Apr 21, 2000||Jul 24, 2001||Tokyo Electron Limited||Plasma treatment method and apparatus|
|US6265757||Nov 9, 1999||Jul 24, 2001||Agere Systems Guardian Corp.||Forming attached features on a semiconductor substrate|
|US6266133||Apr 27, 1999||Jul 24, 2001||Canon Kabushiki Kaisha||Stage device, an exposure apparatus and a device manufacturing method using the same|
|US6296716||Dec 22, 1999||Oct 2, 2001||Saint-Gobain Ceramics And Plastics, Inc.||Process for cleaning ceramic articles|
|US6296740||Apr 24, 1995||Oct 2, 2001||Si Diamond Technology, Inc.||Pretreatment process for a surface texturing process|
|US6335293||Jul 12, 1999||Jan 1, 2002||Mattson Technology, Inc.||Systems and methods for two-sided etch of a semiconductor substrate|
|US6364949||Oct 19, 1999||Apr 2, 2002||Applied Materials, Inc.||300 mm CVD chamber design for metal-organic thin film deposition|
|US6368987||Jun 6, 2000||Apr 9, 2002||Tokyo Electron Limited||Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions|
|US6373573||Mar 13, 2000||Apr 16, 2002||Lj Laboratories L.L.C.||Apparatus for measuring optical characteristics of a substrate and pigments applied thereto|
|US6383333||Apr 27, 1999||May 7, 2002||Tokai Carbon Company, Ltd.||Protective member for inner surface of chamber and plasma processing apparatus|
|US6383964||Nov 29, 1999||May 7, 2002||Kyocera Corporation||Ceramic member resistant to halogen-plasma corrosion|
|US6387817||Sep 7, 1999||May 14, 2002||Agere Systems Guardian Corp.||Plasma confinement shield|
|US6394026||Jan 19, 2000||May 28, 2002||Lam Research Corporation||Low contamination high density plasma etch chambers and methods for making the same|
|US6413578||Oct 12, 2000||Jul 2, 2002||General Electric Company||Method for repairing a thermal barrier coating and repaired coating formed thereby|
|US6444083||Jun 30, 1999||Sep 3, 2002||Lam Research Corporation||Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof|
|US6514377||Sep 7, 2000||Feb 4, 2003||Tokyo Electron Limited||Apparatus for and method of processing an object to be processed|
|US6519037||Jun 1, 2001||Feb 11, 2003||Lj Laboratories, Llc||Spectrometer having optical unit including a randomized fiber optic implement|
|US6527911||Jun 29, 2001||Mar 4, 2003||Lam Research Corporation||Configurable plasma volume etch chamber|
|US6533910||Dec 29, 2000||Mar 18, 2003||Lam Research Corporation||Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof|
|US6537429||Dec 29, 2000||Mar 25, 2003||Lam Research Corporation||Diamond coatings on reactor wall and method of manufacturing thereof|
|US6544380||Feb 19, 2002||Apr 8, 2003||Tokyo Electron Limited||Plasma treatment method and apparatus|
|US6554906||Nov 7, 2000||Apr 29, 2003||Sumitomo Electric Industries, Ltd.||Wafer holder for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus using the same|
|US6562186||Aug 6, 1999||May 13, 2003||Tokyo Electron Limited||Apparatus for plasma processing|
|US6570654||Apr 25, 2002||May 27, 2003||Lj Laboratories Llc||Apparatus and method for measuring optical characteristics of an object|
|US6583064||Mar 21, 2002||Jun 24, 2003||Lam Research Corporation||Low contamination high density plasma etch chambers and methods for making the same|
|US6590660||Mar 21, 2002||Jul 8, 2003||Lj Laboratories Llc||Apparatus and method for measuring optical characteristics of an object|
|US6613204||Feb 7, 2001||Sep 2, 2003||Si Diamond Technology, Inc.||Pretreatment process for a surface texturing process|
|US6613442||Dec 29, 2000||Sep 2, 2003||Lam Research Corporation||Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof|
|US6632549||Jul 17, 2000||Oct 14, 2003||Ngk Insulators, Ltd.||Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same|
|US6641697||Oct 24, 2001||Nov 4, 2003||Applied Materials, Inc||Substrate processing using a member comprising an oxide of a group IIIB metal|
|US6663714||May 17, 2001||Dec 16, 2003||Anelva Corporation||CVD apparatus|
|US6695929||Feb 4, 2002||Feb 24, 2004||Sumitomo Special Co., Ltd.||Method of making material alloy for iron-based rare earth magnet|
|US6724140||Sep 20, 2002||Apr 20, 2004||Fuji Photo Film Co., Ltd.||Organic light-emitting device|
|US6726801||Jun 28, 2002||Apr 27, 2004||Samsung Electronics Co., Ltd.||Dry etching apparatus for manufacturing semiconductor devices|
|US6733620||Sep 6, 2000||May 11, 2004||Tokyo Electron Limited||Process apparatus|
|US6738862||Apr 29, 2002||May 18, 2004||Cisco Technology, Inc.||Block mask ternary CAM|
|US6771483||Jan 17, 2001||Aug 3, 2004||Tocalo Co., Ltd.||Electrostatic chuck member and method of producing the same|
|US6776873||Feb 14, 2002||Aug 17, 2004||Jennifer Y Sun||Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers|
|US6783863 *||Dec 4, 2000||Aug 31, 2004||Tocalo Co., Ltd.||Plasma processing container internal member and production method thereof|
|US6783875||Apr 16, 2001||Aug 31, 2004||Ngk Insulators, Ltd.||Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members|
|US6798519||Sep 30, 2002||Sep 28, 2004||Tokyo Electron Limited||Method and apparatus for an improved optical window deposition shield in a plasma processing system|
|US6805952||Dec 29, 2000||Oct 19, 2004||Lam Research Corporation||Low contamination plasma chamber components and methods for making the same|
|US6806949||Dec 31, 2002||Oct 19, 2004||Tokyo Electron Limited||Monitoring material buildup on system components by optical emission|
|US6811651||Jun 19, 2002||Nov 2, 2004||Tokyo Electron Limited||Gas temperature control for a plasma process|
|US6830622||Mar 30, 2001||Dec 14, 2004||Lam Research Corporation||Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof|
|US6833279||Dec 4, 2002||Dec 21, 2004||Komico Co., Ltd.||Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process|
|US6837966||Sep 30, 2002||Jan 4, 2005||Tokyo Electron Limeted||Method and apparatus for an improved baffle plate in a plasma processing system|
|US6852433||Jul 15, 2003||Feb 8, 2005||Shin-Etsu Chemical Co., Ltd.||Rare-earth oxide thermal spray coated articles and powders for thermal spraying|
|US6863594||Mar 15, 2001||Mar 8, 2005||Paul-Eric Preising||Method and device for cleaning high-voltage carrying installation component parts|
|US6875477||Mar 3, 2003||Apr 5, 2005||Hitachi High-Technologies Corporation||Method for coating internal surface of plasma processing chamber|
|US6884516 *||May 21, 2004||Apr 26, 2005||Tocalo Co., Ltd.||Internal member for plasma-treating vessel and method of producing the same|
|US6894769||Dec 31, 2002||May 17, 2005||Tokyo Electron Limited||Monitoring erosion of system components by optical emission|
|US6896785||Apr 15, 2002||May 24, 2005||Isle Coat Limited||Process and device for forming ceramic coatings on metals and alloys, and coatings produced by this process|
|US7147749||Sep 30, 2002||Dec 12, 2006||Tokyo Electron Limited||Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system|
|US7163585||Mar 19, 2004||Jan 16, 2007||Tokyo Electron Limited||Method and apparatus for an improved optical window deposition shield in a plasma processing system|
|US7300537||Dec 2, 2004||Nov 27, 2007||Lam Research Corporation||Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor|
|US7311797||Jun 27, 2002||Dec 25, 2007||Lam Research Corporation||Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor|
|US7364798||Mar 7, 2005||Apr 29, 2008||Tocalo Co., Ltd.||Internal member for plasma-treating vessel and method of producing the same|
|US20010003271||Dec 8, 2000||Jun 14, 2001||Tokyo Electron Limited||Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film|
|US20010050144||Feb 2, 2000||Dec 13, 2001||Kazuyasu Nishikawa||Plasma processing apparatus|
|US20020018921||Apr 16, 2001||Feb 14, 2002||Ngk Insulators, Ltd.||Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members|
|US20020066532||Oct 22, 2001||Jun 6, 2002||Hong Shih||Corrosion-resistant protective coating for an apparatus and method for processing a substrate|
|US20020076508||Dec 19, 2001||Jun 20, 2002||Chiang Tony P.||Varying conductance out of a process region to control gas flux in an ALD reactor|
|US20020086118||Dec 29, 2000||Jul 4, 2002||Chang Christopher C.||Low contamination plasma chamber components and methods for making the same|
|US20020086501||Dec 29, 2000||Jul 4, 2002||O'donnell Robert J.||Diamond coatings on reactor wall and method of manufacturing thereof|
|US20020086545||Dec 29, 2000||Jul 4, 2002||O'donnell Robert J.||Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof|
|US20020086553||Dec 29, 2000||Jul 4, 2002||O'donnell Robert J.||Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof|
|US20020090464||Nov 20, 2001||Jul 11, 2002||Mingwei Jiang||Sputter chamber shield|
|US20020142611||Mar 30, 2001||Oct 3, 2002||O'donnell Robert J.||Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof|
|US20020177001||Dec 4, 2000||Nov 28, 2002||Yoshio Harada||Plasma processing container internal member and production method thereof|
|US20030010446||Apr 14, 2000||Jan 16, 2003||Morio Kajiyama||Method of manufacturing a processing apparatus|
|US20030029563||Aug 10, 2001||Feb 13, 2003||Applied Materials, Inc.||Corrosion resistant coating for semiconductor processing chamber|
|US20030084848||Jun 19, 2002||May 8, 2003||Tokyo Electron Limited||Gas temperature control for a plasma process|
|US20030113479||Aug 16, 2002||Jun 19, 2003||Konica Corporation||Atmospheric pressure plasma treatmet apparatus and atmospheric pressure plasma treatment method|
|US20030150419||Dec 18, 2002||Aug 14, 2003||Mehdi Daragheh||Piston having ceramic-coated ring groove|
|US20030200929||May 27, 2003||Oct 30, 2003||Hayashi Otsuki||Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film|
|US20040026372||Feb 14, 2003||Feb 12, 2004||Tokyo Electron Limited||Plasma treatment method and apparatus|
|US20040035364||Nov 13, 2001||Feb 26, 2004||Riki Tomoyoshi||Plasma processing apparatus and method for asssembling the plasma processing apparatus|
|US20040050495||Feb 12, 2003||Mar 18, 2004||Masahiro Sumiya||Plasma processing apparatus and plasma processing method|
|US20040060516||Sep 30, 2002||Apr 1, 2004||Tokyo Electron Limited||Method and apparatus for an improved optical window deposition shield in a plasma processing system|
|US20040060656||Sep 30, 2002||Apr 1, 2004||Tokyo Electron Limited||Method and apparatus for an improved bellows shield in a plasma processing system|
|US20040060657||Sep 30, 2002||Apr 1, 2004||Tokyo Electron Limited||Method and apparatus for an improved deposition shield in a plasma processing system|
|US20040060658||Sep 30, 2002||Apr 1, 2004||Tokyo Electron Limited||Method and apparatus for an improved baffle plate in a plasma processing system|
|US20040060661||Sep 30, 2002||Apr 1, 2004||Tokyo Electron Limited||Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system|
|US20040060779||Oct 1, 2002||Apr 1, 2004||Charles Kreger||Distance compensating shim for clutch/brake and method of determining same|
|US20040061447||Sep 30, 2002||Apr 1, 2004||Tokyo Electron Limited||Method and apparatus for an improved upper electrode plate in a plasma processing system|
|US20040063333||Sep 30, 2002||Apr 1, 2004||Tokyo Electron Limited||Method and apparatus for an improved baffle plate in a plasma processing system|
|US20040072426||Jul 17, 2003||Apr 15, 2004||Soon-Jong Jung||Process chamber for manufacturing a smiconductor device|
|US20040081746||Dec 7, 2001||Apr 29, 2004||Kosuke Imafuku||Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment|
|US20040083970||Oct 1, 2001||May 6, 2004||Kosuke Imafuku||Vacuum processing device|
|US20040125359||Dec 31, 2002||Jul 1, 2004||Tokyo Electron Limited||Monitoring material buildup on system components by optical emission|
|US20040168640||May 24, 2002||Sep 2, 2004||Shinji Muto||Substrate table, production method therefor and plasma treating device|
|US20040173155||Mar 19, 2004||Sep 9, 2004||Tokyo Electron Limited||Method and apparatus for an improved optical window deposition shield in a plasma processing system|
|US20040216667||Nov 28, 2003||Nov 4, 2004||Tokyo Electron Limited||Internal member of a plasma processing vessel|
|US20050103268||Dec 14, 2004||May 19, 2005||Tokyo Electron Limited||Method and apparatus for an improved baffle plate in a plasma processing system|
|US20050103275||Feb 9, 2004||May 19, 2005||Tokyo Electron Limited||Plasma processing apparatus, ring member and plasma processing method|
|US20050150866||Dec 2, 2004||Jul 14, 2005||Lam Research Corporation||Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor|
|US20060134919||Jan 24, 2006||Jun 22, 2006||Tokyo Electron Limited||Processing system and method for treating a substrate|
|US20070026246||Jul 29, 2005||Feb 1, 2007||Tocalo Co., Ltd.||Y2O3 spray-coated member and production method thereof|
|US20080070051||Aug 1, 2007||Mar 20, 2008||Tocalo Co., Ltd.||Internal member for plasma-treating vessel and method of producing the same|
|DE9421671U1||Aug 26, 1994||Jul 11, 1996||Siemens Ag||Entladungskammer für eine Plasmaätzanlage in der Halbleiterfertigung|
|EP0326318A2||Jan 24, 1989||Aug 2, 1989||Elkem Technology A/S||Plasma torch|
|*||EP508731A2||Title not available|
|EP0573057A1||Jun 4, 1993||Dec 8, 1993||Applied Materials, Inc.||Integrated circuit structure processing apparatus with chemically corrosion-resistant Al2O3 protective coating on surface of quartz window exposed to corrosive chemicals|
|EP0799904B1||Apr 3, 1997||Sep 20, 2000||International Center for Electron Beam Technologies of E.O. Paton Electric Welding Institute||Method of producing a graded coating with a top ceramic layer|
|EP0814495A3||Jun 19, 1997||Aug 12, 1998||Applied Materials, Inc.||Adjusting DC bias voltage in plasma chamber|
|EP0841838B1||May 22, 1997||Jul 5, 2006||Tokyo Electron Limited||Plasma treatment apparatus and plasma treatment method|
|EP0892083B1||Apr 30, 1998||Mar 19, 2003||Applied Materials, Inc.||Method and apparatus for seasoning a substrate processing chamber|
|EP1069603A4||Mar 4, 1999||Jan 10, 2007||Tokyo Electron Ltd||Processing apparatus|
|EP1081749B1||Apr 27, 1999||May 23, 2012||Tokai Carbon Company, Ltd.||Protective member for inner surface of chamber and plasma processing apparatus|
|EP1156130A4||Dec 4, 2000||Jul 20, 2005||Tocalo Co Ltd||Plasma processing container internal member and production method therefor|
|GB2252567B||Title not available|
|JP03115535A *||Title not available|
|JP2000119840A||Title not available|
|JPH03115535A *||Title not available|
|JPH11233292A||Title not available|
|KR0167829B1||Title not available|
|1||*||"Plasma-sprayed Alumina-Yttria Ceramic Coatings for Cavitation-Erosion Protection" by Hee Jae Kim. Journal of Corrosion Sci. Soc. of Korea. vol. 18, No. 3, Sep. 1989, pp. 140-146.|
|2||JIS Using Series, "Spraying Techniques Manual.", p. 95 (Oct. 30, 1998, Japanese Standard Association), with English Translation.|
|3||JP Office Action mailed Jul. 6, 2010, in Japanese Patent Application No. 2006-245777 (with English-language translation).|
|4||Production drawing for Deposition Shield believed to be sold in the U.S. prior to Sep. 30, 2001.|
|5||Production drawing for Deposition Shield, Upper believed to be sold in the U.S. on Apr. 12, 2000.|
|6||Production drawing for Upper Electrode believed to be sold in the U.S. prior to Sep. 30, 2001.|
|7||Yousha Gitjutsu Handbook, 1st Edition, Japan Thermal Spraying Society, Techno Consultants, Inc., pp. 3, 316-317 (1998) (with partial English translation).|
|8||Yousha Gitjutsu Handbook, 1st Edition, Japan Thermal Spraying Society, Techno Consultants, Inc., pp. 3, 316-317 (1998) (with partial English translation).|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8298338 *||Oct 30, 2012||Samsung Electronics Co., Ltd.||Chemical vapor deposition apparatus|
|US8896210 *||Dec 5, 2012||Nov 25, 2014||Tokyo Electron Limited||Plasma processing apparatus and method|
|US9410247 *||Oct 19, 2012||Aug 9, 2016||Samsung Electronics Co., Ltd.||Chemical vapor deposition apparatus|
|US9431221 *||Jul 8, 2014||Aug 30, 2016||Taiwan Semiconductor Manufacturing Co., Ltd.||Plasma-processing apparatus with upper electrode plate and method for performing plasma treatment process|
|US20090068845 *||Aug 28, 2008||Mar 12, 2009||Lam Research Corporation||Low contamination components for semiconductor processing apparatus and methods for making components|
|US20090165713 *||Oct 28, 2008||Jul 2, 2009||Samsung Electro-Mechanics Co, Ltd.||Chemical vapor deposition apparatus|
|US20130098293 *||Oct 19, 2012||Apr 25, 2013||Samsung Electronics Co., Ltd.||Chemical vapor deposition apparatus|
|US20130162142 *||Dec 5, 2012||Jun 27, 2013||Tocalo Co., Ltd.||Plasma processing apparatus and method|
|US20160013081 *||Jul 8, 2014||Jan 14, 2016||Taiwan Semiconductor Manufacturing Co., Ltd||Plasma-processing apparatus with upper electrode plate and method for performing plasma treatment process|
|U.S. Classification||156/345.1, 315/111.21, 118/723.00R|
|International Classification||H01J7/24, C23C16/507, C23C16/455, C23C16/00, H01J37/32, H01L21/306, C23F1/00, H05B31/26, C23C16/509, B01J19/00, C23F4/00, H01L21/3065, H01L21/302, C23C4/10, C23C16/44, B01J19/08, H01L21/205, H01L21/31|
|Cooperative Classification||C23C4/11, C23C16/45561, H01J37/321, C23C16/45514, C23C16/4404, C23C16/45565, C23C16/45574, C23C16/507, Y10T428/26, H01J37/32477, H01J37/32495, C23C16/4558|
|European Classification||C23C16/455K10, C23C16/507, C23C16/455K16, C23C16/455K2, C23C16/44A4, C23C16/455C, H01J37/32M8D, H01J37/32O4D, C23C16/455J, H01J37/32O4D4, C23C4/10B|