|Publication number||US7915068 B2|
|Application number||US 12/076,244|
|Publication date||Mar 29, 2011|
|Filing date||Mar 14, 2008|
|Priority date||Mar 14, 2008|
|Also published as||US20110027931|
|Publication number||076244, 12076244, US 7915068 B2, US 7915068B2, US-B2-7915068, US7915068 B2, US7915068B2|
|Inventors||Meng-Chu Chen, Shan-Ming Lan, Tsun-Neng Yang, Zhen-Yu Li, Yu-Han Su, Chien-Te Ku, Yu-Hsiang Huang|
|Original Assignee||Atomic Energy Council—Institute of Nuclear Energy Research|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (9), Classifications (25), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of Invention
The present invention relates to a method for making solar cells with sensitized quantum dot and, more particularly, to a method for making solar cells with sensitized metal quantum solar cells in the form of nanometer metal particles.
2. Related Prior Art
Environmental pollution has drawn the attention of the world. There are concerns about global warming caused by the emission of carbon dioxide after consuming fossil fuel for example. Environmentally, there is a need for cleaner energy.
On the other hand, fossil fuel is running out. The price for fossil energy is skyrocketing. Economically, there is need for alternative energy.
People around the world are exploring non-fossil energy such as solar energy, wind power, geothermal energy, fuel cells and bio-energy, intending to reduce the burden that we put on the environment and generating sustainable energy. Solar energy is promising for being clean and safe environmentally, sustainable and inexpensive economically and almost everywhere.
Silicon solar cells were invented in the Bell Laboratory, USA in the 1970s. Silicon solar cells are operated based on the photovoltaic effect of silicon semiconductors. Silicon solar cells convert sunlit into electricity at high photovoltaic efficiencies. However, there are problems with the use of silicon solar cells. Firstly, their production is complicated. Secondly, they are expensive. Thirdly, they are demanding about raw materials.
Dye-sensitized solar cells were invented based on nanometer crystals in the 1990s. Nanometer crystal films of wide band gap semiconductors are used in dye-sensitized solar cells. Nanometer crystal films include huge specific surface areas for attracting much photosensitive dye, thus forming semiconductor electrodes to convert sunlit into electricity. The photovoltaic efficiencies of dye-sensitized solar cells are high while the prices are low. It is very likely that dye-sensitized solar cells will replace silicon solar cells in the future.
In operation, the molecules of the dye of a dye-sensitized solar cell absorb sunlit so that their electrons jump into an exited state from a ground state and rapidly move to a semiconductor band, thus leaving holes in the dye. The electrons spread to a conductive base and then move to paired electrodes via a circuit. The oxidized dye is reduced by electrolyte. The oxidized electrolyte is reduced by receiving electrons from the paired electrodes. That is, the electrons are returned into the ground state. Thus, the circulation of the electrons is completed.
A key factor for the performance of the dye-sensitized solar cell is the speed of the electrons traveling to the semiconductor band after the photochemical reaction. A single-semiconductor nanometer crystal film electrode is problematic in transmitting electrons. There is no built-in electric field, unlike a bulk semiconductor. Moreover, the nanometer particles are too small to form any space charge layer between the nanometer particles and the electrolyte. The migration rate of the electrons is low, and the chance that the electrons and electric acceptors reunite is high. Therefore, the photovoltaic efficiency is low.
In Chinese Patent Application No. 01140225 published on 22 May 2002, disclosed is a nanometer crystal film solar cell related to a dye-sensitized solar cell as shown in
Decorated by the metal ions, the photovoltaic efficiency of the electrode 5 is increased. When the nanometer crystal film 52 is coated on the transparent conductive substrate 51 via sintering at 200 to 600 degrees Celsius, abnormal accumulation often occurs so that the soaking of titanium dioxide in the dye is poor and that the expansion of the surface of the electrode 5 is limited. Hence, the photovoltaic efficiency is low.
The present invention is therefore intended to obviate or at least alleviate the problems encountered in prior art.
The primary objective of the present invention is to provide a method for making solar cells with sensitized quantum dots in the form of nanometer metal particles.
To achieve the foregoing objective of the present invention, the method includes the step of providing a first substrate. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Electrolyte is provided between the first substrate and the metal catalytic film.
Other objectives, advantages and features of the present invention will become apparent from the following description referring to the attached drawing.
The present invention will be described via the detailed illustration of the preferred embodiment referring to the attached drawing.
A metal electrode 24 is coated on the first substrate 21 opposite to the silicon-based film 22. The metal electrode 24 is made of a titanium-palladium-silver alloy. The metal electrode 24 is preferably made of titanium nitride.
In operation, the quantum dots made of the nanometer metal particles absorb visible light of sunlit and convert photons into electron-hole pairs. The hot electrons convert photons into electron-hole pairs efficiently. The photovoltaic efficiency and photocurrent are increased. Moreover, the cost is reduced.
The present invention has been described via the detailed illustration of the preferred embodiment. Those skilled in the art can derive variations from the preferred embodiment without departing from the scope of the present invention. Therefore, the preferred embodiment shall not limit the scope of the present invention defined in the claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US6310282 *||Mar 16, 2000||Oct 30, 2001||Kabushiki Kaisha Toshiba||Photovoltaic conversion element and a dye-sensitizing photovoltaic cell|
|US7132598 *||Dec 3, 2003||Nov 7, 2006||Sony Deutschland Gmbh||Hole transporting agents and photoelectric conversion device comprising the same|
|US20010004901 *||Dec 27, 2000||Jun 28, 2001||Ryosuke Yamanaka||Dye-sensitizing solar cell, method for manufacturing dye-sensitizing solar cell and solar cell module|
|US20060016473 *||Jun 28, 2005||Jan 26, 2006||Jae-Man Choi||Dye-sensitized solar cell employing photoelectric transformation electrode and a method of manufacturing thereof|
|US20060260674 *||Jan 26, 2006||Nov 23, 2006||Tran Bao Q||Nano ic|
|US20070062576 *||Jun 4, 2004||Mar 22, 2007||Michael Duerr||Tandem dye-sensitised solar cell and method of its production|
|US20070119048 *||Nov 14, 2006||May 31, 2007||Seiko Epson Corporation||Electrochemical cell structure and method of fabrication|
|US20070289628 *||Apr 5, 2007||Dec 20, 2007||Samsung Electronics Co., Ltd.||Method for Modifying Surface of Counter Electrode and Surface-Modified Counter Electrode|
|US20080092953 *||May 15, 2007||Apr 24, 2008||Stion Corporation||Method and structure for thin film photovoltaic materials using bulk semiconductor materials|
|U.S. Classification||438/65, 977/810, 977/774, 977/776, 977/773, 977/948, 257/431, 257/428, 257/436, 977/777, 977/775, 438/57, 438/64|
|International Classification||H01L21/00, H01L27/14, H01L31/0232|
|Cooperative Classification||Y10S977/773, Y10S977/774, Y10S977/776, H01G9/20, Y10S977/81, Y10S977/775, Y10S977/948, Y10S977/777|
|Mar 14, 2008||AS||Assignment|
Owner name: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERG
Effective date: 20080222
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHEN, MENG-CHU;LAN, SHAN-MING;YANG, TSUN-NENG;AND OTHERS;REEL/FRAME:020688/0164
|Aug 25, 2014||FPAY||Fee payment|
Year of fee payment: 4