|Publication number||US7941039 B1|
|Application number||US 11/851,310|
|Publication date||May 10, 2011|
|Filing date||Sep 6, 2007|
|Priority date||Jul 18, 2005|
|Publication number||11851310, 851310, US 7941039 B1, US 7941039B1, US-B1-7941039, US7941039 B1, US7941039B1|
|Inventors||Krishnan Shrinivasan, Stephen V. Gentile, Peter Woytowitz, Sassan Roham, George Kamian, Michael Rivkin|
|Original Assignee||Novellus Systems, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (52), Non-Patent Citations (30), Referenced by (12), Classifications (10), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a continuation-in-part of and claims priority to U.S. application Ser. No. 11/184,101, filed Jul. 18, 2005, incorporated by reference herein in its entirety and for all purposes.
During semiconductor processing operations, a wafer may need to be exposed to radiation, plasma discharge, or other phenomena during processing steps such as cure, plasma deposition, photoresist strip, etc. While providing the necessary wafer treatment, the radiation or processing technique may cause large amounts of heat to be transferred to the wafer and the pedestal that supports the wafer. Removing heat flux from the pedestal is often necessary to maintain wafer and pedestal at their desired processing temperatures.
For example, in a UV-cure process, a wafer may be exposed to radiation generated by a mercury vapor lamp. In order to generate said vapor, the lamps must operate at significantly higher temperatures than is desired for processing many films. To accelerate curing as much as possible, it is desirable that the wafer be processed as close to the maximum temperature limit (e.g., around 400° C.) as possible. Typical commercial lamp systems cause the lamp envelope to reach temperatures between 800° and 900° C. The IR radiation emitted by the lamp envelope is incident on the wafer in much the same way as the UV emanating from the lamp discharge. This will cause the wafer temperature to increase above the preferred set-point if active cooling is not performed. Moreover, wafer temperature non-uniformity due to lamp heating (typically 30° C. range) is far worse than that due to pedestal heating (as low as 3° C. range).
Provided herein are assemblies that, when coupled to an object, are capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source, such as IR and UV sources. Applications include various integrated circuit fabrication processes that use such external sources to expose wafers to radiation. In certain embodiments, the assemblies include a pedestal for supporting the wafer or other object. In certain embodiments, the assemblies include a calibrated heat resistance that allows heat be conducted away from the pedestal and wafer to maintain the desired set-point temperature. In certain embodiments, a pedestal has one or more protrusions used to dissipate or transfer heat from the pedestal to a heat sink. Also, in certain embodiments, the pedestal surface is configured to have a spectral reflectivity of desired values in such way as to reflect the wavelengths that are emitted by an external radiant heat source. In certain embodiments, the assemblies include cooling elements such as cooling channels. In these embodiments, commonly available semiconductor fabrication facility water may be used as the only coolant.
In the following detailed description of the present invention, numerous specific embodiments are set forth in order to provide a thorough understanding of the invention. However, as will be apparent to those skilled in the art, the present invention may be practiced without these specific details or by using alternate elements or processes. In other instances well-known processes, procedures and components have not been described in detail so as not to unnecessarily obscure aspects of the present invention. While the use of radiation and in particular ultraviolet (UV) radiation has been employed for purposes of illustrating the present invention, other forms of radiation (i.e., from other parts of the electromagnetic spectrum) can also be practiced using the same essential elements described herein.
The pedestals and heat transfer assemblies are appropriate for applications where it necessary to remove a large amount of heat from an external source, such as lamps or a plasma discharge. In many embodiments, the pedestals are useful for processes in which it is necessary to maintain a wafer at a uniform temperature while removing heat from the external heat source. While the pedestal and heat transfer assemblies of the present invention are described in the context of curing and other IC fabrication processes such as photoresist strip processes, the invention is not so limited. Further, the heat transfer assemblies of the present invention are not limited to use in pedestals or IC fabrication processes, but may be used in any application where it is necessary to remove large amount of heat from an external source while maintaining an object at a uniform specified temperature. For example embodiments of the invention can be used to maintain temperature of chamber walls for semiconductor or other processes, particularly when they may need to be maintained at elevated temperatures while additional energy is incident on the same walls from higher temperature sources such lamps or a plasma discharge. Certain embodiments of the heat transfer assemblies described herein are also particularly useful in applications where heat flux from the external sources is not uniform and also when uniform temperature control is desired. Further, in certain embodiments, the heat transfer and pedestal assemblies may be used in applications in which it is necessary to remove large amounts of heat while workpiece temperature is not uniform (e.g., a wafer pre-heat station).
One application of the pedestal and heat transfer assemblies described herein is UV treatment of semiconductor wafers, including removing porogens, strengthening porous OSG backbones, improving dense non-porous OSG film properties, curing nitrides and other dielectric layers, densification of dielectric materials, and increasing stress in dielectric films (for, e.g., strained gates).
Curing processes such as those described above are very sensitive to wafer temperature. Therefore, it is important that wafer temperature be controlled uniformly and repeatably. Moreover, the wafer is itself assigned a very strict thermal budget, i.e., its temperature during process should not exceed a certain value. For e.g., when curing porous low-k dielectric films, the wafer temperature should not exceed 400° C. so as to not damage the underlying copper layers. As noted above, the presence of non-uniform IR radiation from the UV lamps creates two issues:
In certain embodiments, the pedestals of the present invention successfully address these issues by being capable of operating at a high temperature, while retaining the ability to extract excess heat from the wafer. In one embodiment, the pedestal is capable of removing up to 4 kW of heat from a wafer, while operating at up to 450° C. for a typical cure process. To facilitate these specifications, the pedestal and assemblies according to certain embodiments are able 1) to elevate their temperatures to 450° C. and 2) to remove excess heat incident on the wafer and pedestal without causing a dip in temperature.
Commonly available coolants such as water and ethylene glycol (the main ingredient in automotive anti-freeze) boil at very low temperatures. Therefore, if they come in contact with the hot walls of a coolant channel in a pedestal maintained at an elevated temperature (e.g., 450° C.) these coolants will boil. Since boiling heat transfer is a very efficient means of removing heat, the result will be that the pedestal temperature will dip below the desired set-point of 450° C. Indeed, it is impossible to operate a pedestal at more than 200° C. with a low-boiling coolant such as water or ethylene glycol.
To remove heat from high temperature pedestals, high-boiling fluids have also been used as coolants. These coolants are not commonly available in semiconductor or other manufacturing facilities and thus a dedicated coolant delivery system must be provided. To prevent progressively increasing coolant temperatures, the excess heat removed from the pedestal must be extracted from the coolant, thus requiring external heat exchangers to cool the fluid down before re-introducing it to the pedestal. These systems are undesirable because of this complexity and also because it is difficult to pump high temperature fluids. Gas flown over the pedestal has also been used as a heat transfer fluid; however, this method is inefficient. These type of high-boiling fluids and their associated equipment reduce the reliability and safety and increase the cost of the system.
Another application of the pedestal and heat transfer assemblies described herein is photoresist strip applications.
The IR source transfers heat by radiation to the wafer and pedestal. Additionally, ion bombardment also heats the wafer and pedestal to temperatures that may be undesirably high. As described above in the context of UV cure, the IR heat flux is not uniform, nor is heat flux generated by ion bombardment, and so the wafer and pedestal temperature needs to be coupled to a uniform heat source as well as have the excess heat flux from the IR source and/or ion bombardment removed. Controlling the wafer temperature may be difficult due to the combination of IR radiation heating, ion-bombardment heating and independent pedestal heating (by for example externally controlled embedded heaters). In many cases turning off the external heater power alone is insufficient to prevent the wafer's temperature from rising above the desired limit.
Any IC manufacturing process that heats a wafer, e.g., by radiation and/or ion-bombardment, or other similar manners, can have both the wafer and pedestal temperature controlled by the methods described herein. Such other IC manufacturing processes include, but are not limited to, PVD (physical vapor deposition, HDP (high-density plasma deposition) and PECVD (plasma enhanced chemical vapor deposition).
Independent Control of Workpiece Temperature and External Source Heat
According to various embodiments, the present invention provides independent control of the workpiece temperature regardless of the heat flux from an external lamp source or other external source. For example, by using the wafer pedestal of this invention in UV curing applications, the wafer temperature is decoupled from the UV intensity emanating from the lamps. Typically, curing chambers use broadband high-intensity sources, such as mercury-vapor lamps. Commercially available medium pressure mercury vapor lamps emit radiation of wavelength from below 200 nm to the far-IR range. The wafer is exposed to visible, UV and IR radiation. In typical dielectric curing applications, the visible and IR radiation causes wafer heating. In such lamp systems, intensity of radiation output is adjusted through modulation of electrical power that is fed to the lamps. This may occur either directly through adjustment of electrical voltage in arc-discharge lamps or by modulation of microwave power in those systems that use microwave plasma discharge. In either case, an increase in desirable UV output is accompanied by a corresponding increase in undesirable IR and visible energy output. Thus, the wafer temperature can become closely coupled to the UV intensity in conventional chambers. In addition, because the lamps typically do not illuminate the surface of the wafer uniformly, wafer temperature can be highly non-uniform across the surface of the wafer.
It is desirable to control the wafer temperature and provide high UV intensity without requiring sophisticated filtering systems to remove the IR radiation. Decoupling wafer temperature and UV intensity has benefits in addition to eliminating the harmful effects of non-uniform heat incident on the wafer. The ability to control wafer temperature independently of the UV intensity (and vice versa) allows for modulating certain side-effects of the curing process in preference to one another. The curing process has several side effects that may be beneficial to the various dielectric materials employed in an integrated circuit. As mentioned above, side effects of curing include increased stress and strain of the materials, increased cross-linking of the bonds of the material and densification the material. It is often desirable to increase one of these effects relative to the others for a particular application. For example, for dense low-k carbon-doped oxide films, it is desirable to increase the mechanical properties of the films by cross-linking without a large increase in the stress of the film. For silicon nitride films, a large increase in the stress is desirable. Any of these effects can be modulated in preference to the others by decoupling control of the wafer temperature from UV intensity. In other words, each combination of effect and side-effect requires its own optimal combination of temperature and UV flux.
In other IC manufacturing processes, there is an optimal radiation or plasma intensity to have the desired effect on the substrate. At the same time, there is a small temperature range at which the chemical and/or physical reactions on the wafer surface should occur. Temperatures that deviate from that temperature range may result in such issues as low-deposition rate, which slows down throughput or overheating of the substrate, which can cause damage in previously processed layers.
The present invention provides heat transfer assemblies and pedestals that are capable of modulating these effects by providing independent control of the wafer temperature and the UV, IR or other external source intensity. In certain embodiments, the pedestals and assemblies use a heat transfer resistance calibrated as required by the heat flux from the external heat source and the desired operating temperature. For example, a design may require that the heat transfer assembly be capable of removing from 3 kW to 4 kW from the wafer while maintaining the pedestal at a range of operating temperatures, e.g. 300° C. to 400° C. In certain embodiments, the resistance may be limited by two requirements: 1) the workpiece or pedestal temperature must not exceed the set-point temperature, and 2) if used, the water or other low boiling coolant temperature must stay below boiling.
In certain embodiments, the pedestals of this invention are equipped with a combination of heating elements and cooling elements to control their temperature. In certain embodiments, the wafer temperature is decoupled from the external heat source (by providing a heat sink or cooling elements to remove the IR heat) and coupled to a uniform and easily controlled source, i.e. the heating elements. In certain embodiments, pedestals are equipped with protrusions, stand-offs or other structures located between the main pedestal body and a cold surface or other heat sink and that cause heat transfer to the cold surface. The cold surface may or may not be include cooling channels or other cooling elements. Wafer temperatures may be maintained at levels as high as that which can be tolerated by materials used in the construction of integrated circuits, or assigned to the wafer as part of an overall thermal budget.
In certain embodiments, the heat transfer assemblies and pedestals of the present invention are capable of maintaining the wafer (or other workpiece) at an elevated uniform temperature, i.e. within 2° C. of a set-point temperature. The heat transfer assemblies of the present invention also provide consistent temperatures from pedestal to pedestal.
Cooling channel 203 is a tube arranged in a continuous spiral as shown in top view of the pedestal 201 as shown in
In certain embodiments, the heat resistant layer is located between the heating elements and the cooling channel. Thus, the heat resistant layer in
In certain embodiments, the heating and cooling elements are cast into the pedestal. Casting a liquid metal around the heating and cooling elements (and the heat resistant layer for the tube-in-tube exchanger shown in
Heating elements are used to control the workpiece or object temperature. For example, in a UV cure chamber or other chamber, the wafer temperature is controlled by the heating elements. Standard resistive electrical heaters used to heat pedestals in CVD chambers that are well-known to one skilled in the art may be used. In certain embodiments, electrical heating coils in a metal sheath with a high melting point are used. The pedestal may be made by casting aluminum over the heating elements (as well as the cooling channels and resistant layer in certain embodiments), so the heating coil should be made of metal that has a higher melting point than aluminum. Examples of such metals include stainless steel, nickel, and high-nickel alloys such as Inconel and Hastelloy
As discussed above, in many embodiments, the workpiece temperature is to be controlled depending on the application. According to various embodiments the controlled temperature may be from 200° C. to 600° C. In preferred embodiments wherein the workpiece is a wafer in IC fabrication process, the controlled temperature may be from 200° C. to 600° C., e.g., from 250° C. to 450° C. In a particular embodiment, the controlled temperature of a wafer is around 400° C. In certain embodiments, the controlled temperature may be lower, e.g., around 90° C.
For IC fabrication processes, the wafer should be closely coupled to the pedestal so that the pedestal controls the wafer temperature. Thermal coupling of the wafer and pedestal is described in U.S. application Ser. No. 11/115,576, referred to above. Briefly, the type of gas used and its pressure are important for providing efficient coupling between wafer and pedestal. A gas with high thermal conductivity (e.g., helium) is preferred to provide for efficient thermal coupling between the wafer and the pedestal or other support to the wafer. Helium gas at the desired pressure may be provided either by filling the process chamber, or by providing for wafer back-side pressure control using helium. In the latter case, the chamber pressure must be controlled at a higher value that that at the wafer back-side, albeit with a more commonly available gas such as nitrogen. By providing helium to just the wafer back-side its usage is curtailed. Heat transfer between the wafer and the pedestal takes place by conduction through the gas in the small physical gap between the two. The support can thus be used to control the temperature of the wafer. Depending on the application, operating at high pressure may be preferred so that higher gas conductivity can provide good thermal coupling between the wafer and the pedestal. A typical range is 10-600 Torr, e.g., 200-600 Torr. Throughout the description, pedestal temperature may be referred to instead of wafer temperature as the two are closely coupled. For example, at a typical operating temperature of 400° C., the pedestal is typically 15° C. cooler than the wafer over a wide range of UV lamp power settings and output intensities In some applications more significant differences between wafer and pedestal temperature may exist. However, for all applications of the apparatuses and methods described herein, the pedestal has the ability and may be used to influence the wafer temperature to some degree. In certain embodiments, the pedestal temperature is controlled only by adjusting the heating element power—the heating elements are actively controlled and the cooling elements are passively controlled so that coolant flow rate, etc. does not depend on the pedestal temperature. This is desirable since for a large range of coolant flow rates, the overall heat transfer coefficient is insensitive to the flow rate, thus, flow rate cannot be used to control heat transfer in this regime. On the other hand, the heat added is very sensitive to the current supplied to the heater, thus, one can accurately control the heat added through the heater elements. As indicated above, in certain embodiments, a heat sink with or without cooling channels is employed to absorb or dissipate the excess lamp heat. In these embodiments, the pedestal temperature may also be controlled only by adjusting the heating element power.
Although in certain applications, it is easier to control pedestal temperature with heating element power, as explained above, in other applications it may be useful to use the cooling elements to control the pedestal temperature. In such embodiments, it may be possible to eliminate or reduce the need for a heating element if the amount of heat generated by the external source is sufficient to heat the wafer to its desired temperature.
The cooling element is a typically a cooling channel or channels as shown in
In certain embodiments, cooling elements are located outside the pedestal, e.g., in within one or more chamber walls housing the pedestal. For example,
Also, in certain embodiments, heat is removed via a heat sink that does not have cooling channels other cooling elements.
As discussed above, the cooling channels or heat sink remove excess heat from the external source. (A small amount of heat from the external source may be removed by other mechanisms, for example in a UV cure chamber, by convective loss to the chamber walls.) The channels or heat sink are capable of removing any excess heat incident on the wafer from external sources so that its temperature does not exceed the set-point temperature.
According to various embodiments, the cooling elements of the present invention are capable of removing up to 10 kW of heat. For UV cure chamber applications, the cooling elements may be required to remove a range of heat flux. For example, if there is a plasma discharge in the chamber, the heat incident on the wafer may be as low as 100 W to 500 W. At the other end of the range, as with the case of UV lamps, as much as 10 kW of heat may be incident on the workpiece. The cooling elements are capable of removing a range of heat flux while the wafer temperature is maintained. In some embodiments, the heat flux may range from 100 W to 10 kW. In preferred embodiments, the heat flux ranges from 2 kW to 8 kW, and more preferably from 2 kW to 5 kW. In even more preferred embodiments, the heat flux ranges from 3 kW to 4 kW.
In certain embodiments, the heat transfer assemblies of the present invention are designed to use with low boiling coolants. Any low-boiling cooling fluid may be used, however water is particularly preferred. Other low-boiling coolants may include glycols, and engineered heat transfer fluids such as Galden and Fluorinert. In a particularly preferred embodiment, facility water is used as the coolant and is returned to the facility after use. Most semiconductor fabrication facilities have equipment cooling water loops to provide a readily available source of coolant. Depending upon the facility, the inlet water temperature may range from 10° C. to 25° C. In preferred embodiments, the inlet temperature is about 20° C. As discussed above, the outlet temperature should be below the boiling temperature. In preferred embodiments, the maximum outlet temperature is less than or equal to about 90° C. In more preferred embodiments, the maximum outlet temperature should be from about 50° C. to 80° C. In a particularly preferred embodiment, the exit temperature is about 60° C.
The flow rate of the water or other low boiling coolant will depend upon the particular application. For applications involving a semiconductor wafer on a pedestal, the flow rate should be at least 0.2 gallons per minute. Above this flow rate, the rate of cooling has been found to be independent of the flow rate. Flow rates ranging from 0.2 gallons per minute to 2 gallons per minute are preferred. Of course, one of skill in the art will understand that the optimal flow rate depends upon the design and construction particular process conditions as well as the application.
Calibrated Heat Resistance
The heat resistant layer has a heat transfer resistance calibrated as required by the heat flux from the lamps or other heat source and the desired operating temperature. For example, a design may require that the heat transfer assembly be capable of removing from 3 kW to 4 kW from the wafer while maintaining the pedestal at a range of operating temperatures, e.g. 300° C. to 400° C. As discussed above, in certain embodiments, the resistance may be limited by two requirements: 1) the workpiece or pedestal temperature must not exceed the set-point temperature, and 2) if used, the water or other low boiling coolant temperature must stay below boiling.
In certain embodiments, the resistance may be calibrated to remove the desired amount of heat while maintaining the pedestal at a range of operating temperatures. For example, the heat resistance may be calibrated to remove a set amount of heat from the pedestal, e.g., 3 kW. The heat sink may or may not employ a coolant. If a low-boiling coolant is used, the heat resistance may be calibrated to keep low-boiling coolant temperature below boiling as described above.
In certain embodiments, the heat resistant layer surrounds the cooling channels. For example, in one embodiment, the heat resistant layer surrounds the cooling channel tube and is enclosed by an outer tube, as shown in
According to various embodiments, the heat resistant layer may comprise a spiral coil, a heat resistant material such as sand, a compressed gas or any combination of these. In one embodiment, the heat resistant layer surrounds the cooling channel and is enclosed by an outer tube as described above. The resistance across the annular space between the tubes should dominate the heat transfer from the pedestal material to the coolant. In this embodiment, the layer preferably comprises a spiral coil of a defined pitch. In certain embodiments, the tubes and the wire coil are made from materials having a higher melting point than that of aluminum so that the pedestal may be constructed by pouring molten aluminum over the already-fabricated tube-in-tube heat exchanger. Appropriate materials include stainless steel, nickel and titanium.
The tube-in-tube heat exchanger described above may be of any appropriate dimensions. For wafer pedestal applications, the following dimensions are preferred: for the inner tube (i.e., the cooling channel), an inner diameter (ID) ranging from 0.06 inches to 1 inch and an outer diameter (OD) ranging from 0.1 inches to 1.5 inches; for the outer tube, an ID ranging from 0.125 inches to 1.75 inches and an OD ranging from 0.188 inches to 2 inches. However, one of skill in the art will understand that the dimensions may be adjusted for the particular application. In a preferred embodiment, the diameter of the wire is equal to the annular gap distance, i.e. the ID of the outer tube minus the OD of the inner tube. One function of the wire coil (in addition to providing heat resistance) is to maintain the gap between the tubes. The wire coil maintains the gap even as the heat exchanger coils are bent to create the heat transfer assembly.
The heat resistance of the layer may be calibrated by precisely setting the pitch and the annular gap distance (the ID of the outer tube minus OD of the inner tube). The pitch is the distance between loops of the spiral. Larger pitches result in less resistance. The desired amount of heat resistance may be achieved by properly setting the pitch. If the outer tube is swaged over the inner tube, the higher contact resistance caused by better contact between the tube surfaces and the spacing wire should be taken into account when calculating the required pitch and/or annular distance for a desired resistance.
Heat resistance may also be provided by material of a known resistance such as sand, ceramic beads or fiberglass. These materials may be used instead of or in addition to the spiral coil described above. Typically the heat resistance of the heat resistant layers described above (i.e., containing a spiral coil and air, a spiral coil and a material of known resistance, or material of known resistance and no coil) is fixed in the design. In alternate embodiments, resistance materials may include a compressed gas used alone or in addition to a spiral coil. Variable resistance may be achieved by varying the composition and/or the pressure of the gas. Alternatively, a high-boiling liquid (such as Syltherm and Dowtherm) may be filled into the annular gap between the two tubes and sealed in place.
In some embodiments, the heat resistant layer may comprise a layer of material having a known heat resistance. For example, in the embodiment pictured in
The calibration is based on keeping the pedestal and/or wafer within a desired temperature range. In certain embodiments, it is also based on maintaining a low-boiling coolant below its boiling temperature. As an example, to maintain a pedestal temperature of around 95 C with an input process power (for example from IR+ion-bombardment) of 325 W a total thermal resistance of approximately 3 W/C is needed.
In certain embodiments, the heat resistant layer is able to sustain a high temperature gradient so that the coolant does not boil or over-cool the workpiece. Depending on the desired temperature of the wafer or other object, the temperature gradient across the layer may be around 580° C. (e.g. a 600° C. wafer and 20° C. water). According to various embodiments, the heat resistant layer must be capable of having a temperature gradient of around 600° C., 500° C., 400°, 300° C., 200° or 100° C.
According to various embodiments the resistivity of the heat resistant layer may range from 0.01 to 10° C./W−1. The resistance of the heat resistant layer dominates so the rate of heat transfer is primarily driven by the heat resistant layer and is relatively insensitive to other modes of heat transfer, such as convective heat transfer from the pedestal, conductive heat transfer from the pedestal to the heat resistant layer, etc. For example, in the case of the tube-in-tube exchanger described above, the rate of heat transfer is relatively insensitive to the conductive heat transfer through the tube walls and the convective heat transfer of the coolant.
In the above-described embodiments, a solid-to-solid heat leak path is used for heat transfer, from the top of the pedestal to cooling channels within the pedestal in
In certain embodiments, a pedestal is equipped with one or more heat dissipative protrusions designed to remove a calibrated amount of heat. Each protrusion is separated from the chamber or other heat sink by a proximity gap, which can be can be calibrated to provide the required heat removal. The walls of the chamber are cold surfaces and in some embodiments equipped with coolant channels or otherwise cooled. The protrusions are not connected to the chamber walls, but facilitate dissipation of heat to these cold surfaces. In certain embodiments, these protrusions are used in conjunction with another calibrated heat resistance such as one of those described above in
The protrusions, such as an annular ring in
In certain embodiments, the pedestal surface is modified to have a spectral reflectivity of desired values optimized in such a way as to reflect wavelengths of peak intensity emitted by the external radiant source. In many applications, the external source will emit radiation of a certain range of wavelengths at a high intensity. The high intensity component typically depends on the application; e.g., for UV-induced porogen removal, the high intensity component is at or near the absorption peak of the porogen. For example, a source may have a high intensity component between 250 and 270 nm, with radiation outside this range not emitted or emitted at a lower intensity. The range may be fairly narrow, e.g., around 1-20 nanometers or it may be broader.
Out of a typical 100% incident power from halogen bulb based light source, approximately 30% is reflected back by a silicon wafer, 15% is absorbed by the wafer and 55% is transmitted through it. In case of an anodized pedestal surface, close to 100% of light that was transmitted through the wafer gets absorbed by the pedestal as heat. In the case of a polished aluminum alloy, only 20% is absorbed—making a 5× reduction of the heat load on the pedestal.
According to certain embodiments, the pedestals described herein have a surface that reflects wavelengths that are emitted at high intensity by the external source. Because radiation heating provides a significant amount of heat flux to the pedestal, reflecting at least some of the incident radiation may result in significantly less heat required to be removed. This in turn reduces pedestal temperature control requirements in terms of heater power and response time. The table below shows the difference in heater power required in one example:
Non-reflective pedestal Reflective Pedestal Heat Flux to Pedestal 4 KW per m2 4 KW per m2 Heat Flux Absorbed by 4 KW per m2 1 KW per m2 Pedestal Heat Flux Continously 4 KW per m2 1 KW per m2 Removed by Heat Sink Required Heat Flux 8 KW per m2 2 KW per m2 Provided by Heater
With the non-reflective pedestal, a large heat sink is necessary to remove the excess heat from the pedestal. When a wafer needs to be heated up to or maintained at an elevated temperature, the heating elements have to overcome that the heat continuously being removed from the pedestal. Eliminating or reducing the amount of heat absorbed by the pedestal means that the heat removed by the heat sink is reduced. The required heater power is also reduced as it does not have to overcome a large heat sink. Heating response time is also reduced.
The reflective surface may be optimized to reflect the wavelengths emitted by the external source at the highest intensity and incident on the pedestal. For incident radiation in the ultraviolet spectrum, mirror polished surfaces may be used. For incident radiation in the infrared and visible spectra, highly polished pedestals may be used. For example, in certain embodiments, commercially available aluminum pedestals are polished to reflect the IR or visible radiation. In certain embodiments, pedestals having a finish in the range of 16 or 32 micro-inches are used for IR sources. Metals that may be polished include aluminum, copper, rhodium and platinum. Effective reflection of visible light and especially UV typically requires smoother surface or optical coatings.
In certain embodiments, only part of the spectral range of the emitted radiation is reflected by the pedestal. For example, a source may emit both UV and IR (as discussed above with reference to mercury vapor lamps). The pedestal is designed to reflect the IR light.
Pedestal surfaces may be polished to give the desired reflectivity, or an optical coating may be applied to the pedestal. Suitable coatings are inert to and able to withstand the processing environment. Pedestals having reflective surfaces may be used apart from or in addition to other heat transfer embodiments described above. The table below provides examples of appropriate materials for various wavelengths:
Wavelength Low index (<1.6) High index (>1.6) UV (250-400 nm) MgF2, SiO2, Al2O3, CeF3 Al2O3, HfO2, Y2O3, Sc2F3 Visible/near IR MgF2, SiO2 Zr2O2, HfO2, Y2O3, Ta2O5, (400-1100 nm) Nb2O5, TiO2 Short wavelength - SiO2, SiO, CeF3 Ta2O5, HfO2, TiO2, Ge midwavelength IR (1100-5000) Long wavelength CeF3, YF3, ThF4, ZnS ZnS, ZnS, Ge IR (5000-12000)
As indicated above, in certain embodiments the operating range of a heat transfer assembly of the present invention is the temperature range in which the workpiece or pedestal can be modulated solely by adjusting the heating element power. For example, a heat transfer assembly in a pedestal may have an operating range of 300° C.-400° C. The heat transfer assembly is able to maintain the pedestal at any temperature in this range without boiling the coolant (in cases in which a coolant is used), overcooling or going above the set-point temperature. In another embodiment, a heat transfer assembly may have an operating range of 50-300° C.
In embodiments which use calibrated heat resistances, the operating range for a particular range of heat flux is primarily determined by the heater capacity and the resistance of the heat resistant layer. For heat transfer assemblies in which the heating capacity and the resistance are fixed, the operating range for a particular range of heat flux is also fixed. Variable operating capacity may be achieved with variable heat layer resistance as discussed above. Heating capacities of 4 kW have been found to allow operating ranges of about 100° C. (pedestal temperature) with fixed resistance systems. Operating range may be increased by increasing the heater capacity.
According to various embodiments, multiple heat transfer assemblies having different operating ranges may be used. For example, a pedestal may contain two tube-in-tube heat exchangers, each having a different pitch and resistance and operating range (e.g. a 200° C.-300° C. range and a 300°-400° C. range). Water would be selectively run through the appropriate tube during operation.
Although the foregoing invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the present invention. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3612825||Aug 8, 1969||Oct 12, 1971||Shatterproof Glass Corp||Windowed high-temperature ovens|
|US4457359||May 25, 1982||Jul 3, 1984||Varian Associates, Inc.||Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer|
|US4535835||Jul 18, 1984||Aug 20, 1985||Varian Associates, Inc.||Optimum surface contour for conductive heat transfer with a thin flexible workpiece|
|US4563589||Jan 9, 1984||Jan 7, 1986||Scheffer Herbert D||Ultraviolet curing lamp device|
|US5113929||Apr 5, 1991||May 19, 1992||Anelva Corporation||Temperature control system for semiconductor wafer or substrate|
|US5178682||Apr 18, 1991||Jan 12, 1993||Mitsubishi Denki Kabushiki Kaisha||Method for forming a thin layer on a semiconductor substrate and apparatus therefor|
|US5228208||Jul 28, 1992||Jul 20, 1993||Applied Materials, Inc.||Method of and apparatus for controlling thermal gradient in a load lock chamber|
|US5282121||Apr 30, 1991||Jan 25, 1994||Vari-Lite, Inc.||High intensity lighting projectors|
|US5447431||Oct 29, 1993||Sep 5, 1995||Brooks Automation, Inc.||Low-gas temperature stabilization system|
|US5558717||Nov 30, 1994||Sep 24, 1996||Applied Materials||CVD Processing chamber|
|US5588827||Jun 7, 1995||Dec 31, 1996||Brooks Automation Inc.||Passive gas substrate thermal conditioning apparatus and method|
|US5811762 *||Sep 25, 1996||Sep 22, 1998||Taiwan Semiconductor Manufacturing Company, Ltd.||Heater assembly with dual temperature control for use in PVD/CVD system|
|US6072163||Mar 5, 1998||Jun 6, 2000||Fsi International Inc.||Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate|
|US6087632||Jan 11, 1999||Jul 11, 2000||Tokyo Electron Limited||Heat processing device with hot plate and associated reflector|
|US6200634||Aug 14, 1998||Mar 13, 2001||Mattson Technology, Inc.||Thermal processing system with supplemental resistive heater and shielded optical pyrometry|
|US6214184 *||May 14, 1997||Apr 10, 2001||Taiwan Semiconductor Manufacturing Company, Ltd||Insulated wafer pedestal|
|US6228438||Sep 22, 1999||May 8, 2001||Unakis Balzers Aktiengesellschaft||Plasma reactor for the treatment of large size substrates|
|US6307184||Jul 12, 1999||Oct 23, 2001||Fsi International, Inc.||Thermal processing chamber for heating and cooling wafer-like objects|
|US6394797||Mar 16, 2000||May 28, 2002||Hitachi, Ltd.||Substrate temperature control system and method for controlling temperature of substrate|
|US6413321 *||Dec 7, 2000||Jul 2, 2002||Applied Materials, Inc.||Method and apparatus for reducing particle contamination on wafer backside during CVD process|
|US6467491||Aug 3, 2000||Oct 22, 2002||Tokyo Electron Limited||Processing apparatus and processing method|
|US6559424||Jan 2, 2001||May 6, 2003||Mattson Technology, Inc.||Windows used in thermal processing chambers|
|US6563092||Nov 28, 2001||May 13, 2003||Novellus Systems, Inc.||Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry|
|US6639189||Oct 18, 2002||Oct 28, 2003||Fsi International, Inc.||Heating member for combination heating and chilling apparatus, and methods|
|US6860965||Jun 21, 2001||Mar 1, 2005||Novellus Systems, Inc.||High throughput architecture for semiconductor processing|
|US6895179 *||Sep 10, 2003||May 17, 2005||Hitachi High-Technologies Corporation||Wafer stage for wafer processing apparatus|
|US6899765||Mar 29, 2002||May 31, 2005||Applied Materials Israel, Ltd.||Chamber elements defining a movable internal chamber|
|US7138606 *||Sep 10, 2003||Nov 21, 2006||Hitachi High-Technologies Corporation||Wafer processing method|
|US7253125||Apr 16, 2004||Aug 7, 2007||Novellus Systems, Inc.||Method to improve mechanical strength of low-k dielectric film using modulated UV exposure|
|US7265061||Mar 11, 2004||Sep 4, 2007||Novellus Systems, Inc.||Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties|
|US7327948 *||Jul 18, 2005||Feb 5, 2008||Novellus Systems, Inc.||Cast pedestal with heating element and coaxial heat exchanger|
|US7410355||Feb 17, 2006||Aug 12, 2008||Asm International N.V.||Method for the heat treatment of substrates|
|US20020117109||Feb 27, 2001||Aug 29, 2002||Hazelton Andrew J.||Multiple stage, stage assembly having independent reaction force transfer|
|US20020162630||Oct 17, 2001||Nov 7, 2002||Kiyoshi Satoh||Semiconductor substrate-supporting apparatus|
|US20030013280||Dec 7, 2001||Jan 16, 2003||Hideo Yamanaka||Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device|
|US20030113187||Dec 14, 2001||Jun 19, 2003||Applied Materials, Inc.||Dual robot processing system|
|US20040023513||Jul 18, 2001||Feb 5, 2004||Shintaro Aoyama||Method for manufacturing semiconductor device, substrate treater, and substrate treatment system|
|US20040060917||Sep 30, 2002||Apr 1, 2004||Yong Liu||Advanced rapid thermal processing (RTP) using a linearly-moving heating assembly with an axisymmetric and radially-tunable thermal radiation profile|
|US20040183226||Apr 1, 2004||Sep 23, 2004||3D Systems, Inc.||Post processing three-dimensional objects formed by selective deposition modeling|
|US20040187790||Dec 30, 2003||Sep 30, 2004||Osram Opto Semiconductors Gmbh||Substrate holder|
|US20050045616||Aug 26, 2004||Mar 3, 2005||Masahito Ishihara||Substrate heating apparatus and multi-chamber substrate processing system|
|US20060018639 *||Jul 22, 2005||Jan 26, 2006||Sundar Ramamurthy||Processing multilayer semiconductors with multiple heat sources|
|US20060081186 *||Dec 8, 2005||Apr 20, 2006||Hiroshi Shinriki||Single-substrate-heat-processing apparatus for performing reformation and crystallization|
|US20070107845||Jan 16, 2007||May 17, 2007||Shigeru Ishizawa||Semiconductor processing system|
|US20090060480||Sep 4, 2007||Mar 5, 2009||Sokudo Co., Ltd.||Method and system for controlling bake plate temperature in a semiconductor processing chamber|
|JP2005116655A||Title not available|
|JPH0637054A||Title not available|
|JPH0992615A||Title not available|
|JPH01107519A||Title not available|
|JPH07147274A||Title not available|
|KR20030096732A||Title not available|
|WO2002011911A1||Feb 5, 2001||Feb 14, 2002||S C Fluids Inc||Inverted pressure vessel with shielded closure mechanism|
|1||Allowed Claims from U.S. Appl. No. 11/184,101.|
|2||Doble et al., "Concave Pedestal for Uniform Heating of Silicon Wafers," Novellus Systems, Inc., U.S. Appl. No. 11/546,189, filed Oct. 10, 2006.|
|3||Gage et al., "Minimum Contact Area Wafer Clamping with Gas Flow for Rapid Wafer Cooling," Novellus Systems, Inc., U.S. Appl. No. 12/333,239, filed Dec. 11, 2008.|
|4||Gage et al., "Transferring Heat in Loadlocks," Novellus Systems, Inc., U.S. Appl. No. 12/140,196, filed Jun. 16, 2008.|
|5||International Search Report and Written Opinion for application No. PCT/US2009/067040, mailed Aug. 2, 2010.|
|6||Landess et al., "Tailored Profile Pedestal for Therm-Elastically Stable Cooling or Heating of Substrates," Novellus Systems, Inc., U.S. Appl. No. 11/129,266, filed May 12, 2005, pp. 1-25.|
|7||Nordin et al., "Closed Loop Temperature Heat Up and Control Utilizing Wafer-To-Heater Pedestal Gap Modulation," Novellus Systems, Inc., U.S. Appl. No. 11/937,364, filed Nov. 8, 2007.|
|8||Notice of Allowance and Fee Due mailed Jan. 25, 2007, from U.S. Appl. No. 11/184,101.|
|9||Rivkin et al., "Load Lock Design for Rapid Wafer Handling," Novellus Systems, Inc., U.S. Appl. No. 11/608,185, filed Dec. 7, 2006.|
|10||Rivkin et al., "Photoresist Stripping Method and Apparatus," Novellus Systems, Inc., U.S. Appl. No. 61/050,880, filed May 6, 2008.|
|11||Shrinivasan et al., "Single-Chamber Sequential Curing of Semiconductor Wafers," Novellus Systems, Inc., U.S. Appl. No. 11/115,576, filed Apr. 26, 2005.|
|12||U.S. Appl. No. 11/115,576, Office Action mailed Apr. 15, 2010.|
|13||U.S. Appl. No. 11/115,576, Office Action mailed Apr. 22, 2009.|
|14||U.S. Appl. No. 11/129,266, "Tailored profile pedestal for thermo-elastically stable cooling for heating of substrates", Landess et al., filed May 12, 2005.|
|15||U.S. Appl. No. 11/129,266, Office Action mailed Feb. 20, 2009.|
|16||U.S. Appl. No. 11/129,266, Office Action mailed Oct. 28, 2009.|
|17||U.S. Appl. No. 11/608,185, Office Action mailed Apr. 26, 2010.|
|18||U.S. Appl. No. 11/751,584, "Cast pedestal with heating element on coaxial heat exchanger", Shrinivasan et al., filed May 21, 2007.|
|19||U.S. Appl. No. 11/937,364, Office Action mailed Apr. 9, 2010.|
|20||U.S. Appl. No. 12/341,943, "Atomic layer removal for high aspect ratio gapfill", van Schravendijk et al., filed Dec. 22, 2008.|
|21||U.S. Appl. No. 12/341,943, Office Action mailed Jun. 11, 2010.|
|22||U.S. Appl. No. 12/435,890, "Photoresist stripping method and apparatus", Rivkin et al., filed May 5, 2009.|
|23||U.S. Appl. No. 12/749,170, "Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates", Landess et al., filed Mar. 29, 2010.|
|24||U.S. Appl. No. 61/122,308, "Conductively cooled process for wide temperature range processes", Nich et al., filed Dec. 12, 2008.|
|25||U.S. Final Office Action mailed May 2, 2008, from U.S. Appl. No. 11/115,576.|
|26||U.S. Office Action mailed Jul. 18, 2006, from U.S. Appl. No. 11/184,101.|
|27||U.S. Office Action mailed Jun. 16, 2008, from U.S. Appl. No. 11/546,189.|
|28||U.S. Office Action mailed Oct. 17, 2008, from U.S. Appl. No. 11/115,576.|
|29||U.S. Office Action mailed Oct. 3, 2007, from U.S. Appl. No. 11/115,576.|
|30||U.S.Final Office Action mailed Oct. 16, 2008, from U.S. Appl. No. 11/546,189.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8033771||Dec 11, 2008||Oct 11, 2011||Novellus Systems, Inc.||Minimum contact area wafer clamping with gas flow for rapid wafer cooling|
|US8273670||May 6, 2011||Sep 25, 2012||Novellus Systems, Inc.||Load lock design for rapid wafer heating|
|US8371567||Apr 13, 2011||Feb 12, 2013||Novellus Systems, Inc.||Pedestal covers|
|US8449174 *||Aug 17, 2010||May 28, 2013||Lam Research Corporation||Method and apparatus for chuck thermal calibration|
|US8454294||Sep 7, 2011||Jun 4, 2013||Novellus Systems, Inc.||Minimum contact area wafer clamping with gas flow for rapid wafer cooling|
|US8851463||Jan 8, 2013||Oct 7, 2014||Novellus Systems, Inc.||Pedestal covers|
|US8920162||Oct 18, 2011||Dec 30, 2014||Novellus Systems, Inc.||Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation|
|US9028765||Aug 23, 2013||May 12, 2015||Lam Research Corporation||Exhaust flow spreading baffle-riser to optimize remote plasma window clean|
|US9070750||Mar 6, 2013||Jun 30, 2015||Novellus Systems, Inc.||Methods for reducing metal oxide surfaces to modified metal surfaces using a gaseous reducing environment|
|US9073100 *||Feb 25, 2013||Jul 7, 2015||Novellus Systems, Inc.||Method and apparatuses for reducing porogen accumulation from a UV-cure chamber|
|US20100309604 *||Dec 9, 2010||Lam Research Corporation||Method and Apparatus for Chuck Thermal Calibration|
|US20130284087 *||Feb 25, 2013||Oct 31, 2013||Novellus Systems, Inc.||Method and apparatuses for reducing porogen accumulation from a uv-cure chamber|
|U.S. Classification||392/416, 118/724|
|International Classification||A21B2/00, C23C16/00|
|Cooperative Classification||H01L21/67103, H01L21/67115, C23C16/56|
|European Classification||C23C16/56, H01L21/67S2H6, H01L21/67S2H2|
|Sep 7, 2007||AS||Assignment|
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHRINIVASAN, KRISHNAN;GENTILE, STEPHEN V.;WOYTOWITZ, PETER;AND OTHERS;SIGNING DATES FROM 20070803 TO 20070829;REEL/FRAME:019799/0887
Owner name: NOVELLUS SYSTEMS, INC., CALIFORNIA
|Nov 10, 2014||FPAY||Fee payment|
Year of fee payment: 4