|Publication number||US7953931 B2|
|Application number||US 12/035,398|
|Publication date||May 31, 2011|
|Filing date||Feb 21, 2008|
|Priority date||Aug 4, 1999|
|Also published as||US20080209112|
|Publication number||035398, 12035398, US 7953931 B2, US 7953931B2, US-B2-7953931, US7953931 B2, US7953931B2|
|Inventors||I-Kang Yu, David Q. Chow, Charles C. Lee, Abraham Chih-Kang Ma, Ming-Shiang Shen|
|Original Assignee||Super Talent Electronics, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (17), Non-Patent Citations (4), Referenced by (16), Classifications (19), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a continuation-in-part (CIP) of U.S. Patent application for “High Speed Controller for Phase Change Memory Peripheral Devices”, U.S. application Ser. No. 11/770,642, filed on Jun. 28, 2007, now U.S. Pat. No. 7,889,544, which is a CIP of “Local Bank Write Buffers for Acceleration a Phase Change Memory”, U.S. application Ser. No. 11/748,595, filed May 15, 2007, now U.S. Pat. No. 7,471,556, which is CIP of “Flash Memory System with a High Speed Flash Controller”, application Ser. No. 10/818,653, filed Apr. 5, 2004, now U.S. Pat. No. 7,243,185.
This application is also a CIP of U.S. Patent application for “Method and Systems of Managing Memory Addresses in a Large Capacity Multi-Level Cell (MLC) based Memory Devices”, U.S. application Ser. No. 12/025,706, filed Feb. 4, 2008 now U.S. Pat. No. 7,886,108.
This application is also a CIP of U.S. Patent application for “Hybrid SSD using a combination of SLC and MLC flash memory arrays”, U.S. application Ser. No. 11/926,743, filed Oct. 29, 2007
This application is also a CIP of U.S. Patent application for “Flash Memory Controller For Electronic Data Flash Card”, U.S. application Ser. No. 11/466,759, filed on Aug. 23, 2006 now U.S. Pat. No. 7,702,381, which is a CIP of “Managing Flash Memory including Recycling Obsolete Sectors”, U.S. application Ser. No. 10/789,333, filed on Feb. 26, 2004, now U.S. Pat. No. 7,318,117.
This application is also a CIP of U.S. Patent application for “Managing Bad Blocks in Flash Memory for Electronic Data Flash Card”, U.S. application Ser. No. 11/471,000, filed Sep. 7, 2006 now U.S. Pat. No. 7,690,031.
This application is also a CIP of U.S. patent application Ser. No. 11/624,667 filed on Jan. 18, 2007 now abandoned, entitled “Electronic data Storage Medium with Fingerprint Verification Capability”, which is a divisional patent application of U.S. patent application Ser. No. 09/478,720 filed on Jan. 6, 2000, now U.S. Pat. No. 7,257,714 issued on Aug. 14, 2007, all of which are incorporated herein as though set forth in full.
The present invention relates to non-volatile memory devices, and more particularly to methods and systems for providing high endurance in non-volatile memory devices (NVMDs).
Personal computers have become mainstream computing devices for the past two decades. One of the core components of a personal computer whether desktop or laptop is a mother board, which is the central or primary circuit board providing attachment points for one or more of the following: processor (CPU), graphics card, sound card, hard disk drive controller, memory (Random Access Memory (RAM), Read-Only Memory (ROM)), and other external devices. Traditionally, hard disk drives have been used as a data storage in a computing device. With advance of non-volatile memory (e.g., flash memory), some attempts have been made to use non-volatile memory as the storage. One form of flash memory is referred to as Single-Level Cell (SLC) flash memory, in which each flash memory cell stores two states or one bit of information. Another form is referred to as Multi-Level Cell (MLC) flash, which can store more than two states of information, for example, four states or two bits. Because the MLC flash can hold more information than the SLC flash in a same size chip or integrated circuit, it is therefore more economic to use the MLC flash to create a storage device for replacing the traditional hard disk drive.
However, there are problems associated with using flash memory. One of the main problems is that the life span of the flash memory is measured by number of times that the flash memory has been written (i.e., programmed) and erased. This problem has a relatively large impact to the MLC flash, because a typical life span is an order of magnitude lower than that of the SLC flash. The prior art solution is to use wear leveling technique to prolong the life span. But such solution is not sufficient for using MLC as data storage.
Therefore it would be desirable to provide a non-volatile memory device (NVMD) to improve the endurance of MLC flash memory.
This section is for the purpose of summarizing some aspects of the present invention and to briefly introduce some preferred embodiments. Simplifications or omissions in this section as well as in the abstract and the title herein may be made to avoid obscuring the purpose of the section. Such simplifications or omissions are not intended to limit the scope of the present invention.
High endurance non-volatile memory devices (NVMD) are disclosed. According to one aspect of the present invention, a high endurance NVMD includes an input/output (I/O) interface, a NVM controller, a CPU along with a volatile memory cache subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache for the at least one non-volatile memory module, which is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host.
According to another aspect, the data cache may be comprised of dynamic random access memory (DRAM) configured with multi-level (e.g., L1, L2 and L3). The at least one non-volatile memory comprise single-level-cell (SLC), multi-bit-cell (MBC), or multi-level-cell (MLC) flash memory chips. SLC flash memory chip contains 2-bit of data per cell, while MBC or MLC contains more than 2-bit (e.g., 4, 8 or higher power of two). Other types of non-volatile memory may also be used, for example, phase-change memory, Magnetoresistive random access memory, Ferroelectric random access memory, Nano random access memory.
According to yet another aspect, the at least one NVM module may comprise first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash memory. The volatile memory and the at least non-volatile memory are arranged in a hierarchical scheme with the first type of NVM configured as a buffer between the data cache and the second type of NVM.
According to yet another aspect, data cached in the data cache subsystem is guaranteed to have a copy stored in the first type of NVM. The stored data in the first type of NVM is moved to the second type of NVM only if a predefined capacity of the first type has been used up. A usage tracking flag is included in each block of the first type of NVM to determine which block is the least used. The predefined capacity of the first type of NVM is so chosen that at least one data block is available for data programming.
According to yet another aspect, a plurality of NVMDs may be coupled to a central processing unit, which balances the data transfer operations to each of the NVMDs to evenly distribute the loads.
According to an exemplary embodiment of the present invention, a non-volatile memory device (NVMD) includes at least the following: a central processing unit (CPU); at least one non-volatile memory (NVM) module configured as a data storage of a host computer system, when the NVMD is adapted to the host; a NVM controller, coupling to the CPU, configured to manage the at least one NVM module; a volatile memory subsystem, coupling to the CPU and the NVM controller, configured as a data cache subsystem between the NVM module and the host; and an input/output (I/O) interface, coupling to the NVM controller, configured for receiving incoming data from the host to the data cache subsystem and configured for sending outgoing data from the data cache subsystem to the host, wherein said at least one non-volatile memory module comprises first and second types of NVM arranged in a hierarchical scheme with the first type of NVM configured as a buffer between the data cache subsystem and the second type of NVM and wherein total capacity of the data storage is a combined capacity of the first and second types of NVM.
According to another embodiment of the present invention, a method of managing data transfer operations in a high endurance non-volatile memory device (NVMD) adapted to a host computer system, the NVMD comprises a volatile memory as a data cache subsystem and at least one non-volatile memory module as a data storage of the host, the method comprises at least the following: receiving a data transfer request including a logical sector address (LSA) of data to be transferred from the host computer system; determining whether a ‘cache-hit’ or a ‘cache-miss’ status in the data cache subsystem according to the index and the tag derived from the received LSA, the ‘cache-hit’ status represents a ‘cache-hit’ cache line contains relevant data; determining whether the data transfer request is a read or a write operation; when the read operation and the ‘cache-hit’ are determined, retrieving requested data from the ‘cache-hit’ cache line and sending to the host; and updating a cache usage status; when the read operation and the ‘cache-miss’ are determined, loading the request data from the at least one non-volatile memory device based on the received LSA to a least-recently used (LRU) cache line in the data cache subsystem; sending the requested data to the host; and updating a cache usage status; when the write operation and the ‘cache-hit’ are determined, writing incoming data to ‘cache-hit’ cache line; updating the cache usage status; and storing the incoming data into the at least one non-volatile memory according to the received LSA; and when the write operation and the ‘cache-miss’ are determined, writing the incoming data to the LRU cache line; updating the cache usage status; and storing the incoming data into the at least one non-volatile memory according to the received LSA.
One of the objects, features, and advantages in the present invention is that a volatile memory data cache subsystem is placed between a host and a data storage made of non-volatile memory to reduce data programming to the non-volatile memory, hence prolonging life span of the non-volatile memory in a high endurance non-volatile memory device. Other objects, features, and advantages of the present invention will become apparent upon examining the following detailed description of an embodiment thereof, taken in conjunction with the attached drawings.
These and other features, aspects, and advantages of the present invention will be better understood with regard to the following description, appended claims, and accompanying drawings as follows:
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will become obvious to those skilled in the art that the present invention may be practiced without these specific details. The descriptions and representations herein are the common means used by those experienced or skilled in the art to most effectively convey the substance of their work to others skilled in the art. In other instances, well-known methods, procedures, components, and circuitry have not been described in detail to avoid unnecessarily obscuring aspects of the present invention.
Reference herein to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the invention. The appearances of the phrase “in one embodiment” in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Used herein, the terms “upper”, “lower”, “top”, “bottom”, “middle”, “upwards”, and “downwards” are intended to provide relative positions for the purposes of description, and are not intended to designate an absolute frame of reference. Further, the order of blocks in process flowcharts or diagrams representing one or more embodiments of the invention do not inherently indicate any particular order nor imply any limitations in the invention.
Embodiments of the present invention are discussed herein with reference to
Referring now to the drawings,
When the NVMD 130 is adapted to the host computer system 100, the I/O interface 132 is operable to ensure that data transfer between the host 100 and the at least one non-volatile memory module 138 through one of the industry standards including, but not limited to, Advanced Technology Attachment (ATA) or Parallel ATA (PATA), Serial ATA (SATA), Small Computer System Interface (SCSI), Universal Serial Bus (USB), Peripheral Component Interconnect (PCI) Express, ExpressCard, fiber channel Interface, optical connection interface circuit, Secure Digital. The CPU 133 comprises a general purpose processing unit (e.g., a standalone chip or a processor core embedded in a system on computer (SoC)) configured for executing instructions loaded on the main storage (e.g., main memory (not shown)). The NVM controller 134 is configured to manage data transfer operations between the host computer system 100 and the at least one non-volatile memory module 138. Types of the data transfer operations include data reading, writing (also known as programming) and erasing. The data transfer operations are initiated by the host 100. Each of the data transfer operations is accomplished with a logical address (e.g., logical sector address (LSA)) from the host 100 without any knowledge of the physical characteristics of the NVMD 130.
The data cache subsystem 136 comprises of volatile memory such as random access memory (e.g., dynamic random access memory (DRAM)) coupled to the CPU 133 and the NVM controller 134. The cache subsystem 136 is configured to hold or cache either incoming or outgoing data in data transfer operations to reduce number of data writing/programming operations directly to the at least one non-volatile memory module 138. The cache subsystem 136 includes one or more levels of cache (e.g., level one (L1) cache, level two (L2) cache, level three (L3) cache, etc.). The cache subsystem 136 may use one of the mapping schemes including direct mapping, fully associative and N-set (N-way) associative. N is a positive integer greater than one. According to one aspect, the cache subsystem 136 is configured to cover the entire range of logical address, which is mapped to physical address of the at least one non-volatile memory module 138.
Each of the at least one non-volatile memory module 138 may include at least one non-volatile memory chip (i.e., integrated circuit). Each chip includes one or more planes of flash cells or arrays. Each plane comprises an independent page register configured to accommodate parallel data transfer operations. Each plane of the non-volatile memory chip is arranged in a data structure as follows: Each of the chips is divided into a plurality of data blocks and each block is then partitioned into a plurality of data pages. Each of the pages may contain one or more addressable data sectors in a data area and other information such as error correcting code (ECC) in a spare area. The data erasing in the non-volatile memory is perform in a data block by data block basis, while the data reading and writing can be performed for each data sector. The data register is generally configured to hold one data page including both data and spare areas. The non-volatile memory may include, but not be limited to, SLC flash memory (SLC), MLC flash memory (MLC), phase-change memory, Magnetoresistive random access memory, Ferroelectric random access memory, Nano random access memory.
A second exemplary high endurance NVMD 170 is shown in
According to another embodiment, a third exemplary NVMD 191 is shown in
The relationship between the LSA 202 and the cache subsystem 210 is as follows: First, the index 206 of the LSA 202 is used for determining which entry of the cache directory 212 (e.g., using the index 206 as the entry number of the cache directory 212). Next, based on the data validity flag 224 and the LRU flag 223, one of the N sets 227 a-n of the cache line is selected to store the data associated with the LSA 202. Finally, the tag 204 of the LSA 202 is filled into the respective one of the tag field 226 a-n corresponding to the selected set of the N sets 227 a-n of the cache line. The line offset 208 may be further partitioned into block, page and sector offsets that match the data structure of the at least one non-volatile memory in the NVMD 170.
According to another embodiment, an alternative cache subsystem 230 is shown in
LSA is describe with a numerical example is shown below. A host (e.g., the host computer system 100) accesses a non-volatile memory (e.g., NVM 138) comprising 4 giga-byte (4 GB) of data including 8096 blocks. Each of the blocks is divided into 128 pages, and each page eight sectors. Each sector contains 512-byte of data. Should the host need to address the entire storage space in bytes, a 32-bit address would be used. Since 512-byte sector is a basic unit for the non-volatile memory, only 23-bit is required with the first 9-bit as the tag, the next 4-bit as the index followed by a 7-bit page offset (i.e., 128 pages) with a 3-bit sector offset (i.e., 8 sectors). Combining the tag and the index results into a 13-bit logical block address (LBA).
Physical structure of an exemplary non-volatile memory is shown in
Pins configured on each die of the non-volatile memory chip 400 include four logical groups: ready/busy (R/B), chip select (CS), input/output (I/O) and control. Some of the logical groups require only one pin, others more. For example, the ready/busy and the chip select only need one (1) pin each, while the I/O bus may need eight (8) pins. In order to achieve high performance for the high endurance NVMD, the I/O bus 404 and the control bus 405 of ‘die 0’ 401 a and ‘die 1’ 401 b are wired together. The ready/busy and chip select pins are separately wired (i.e., R/B#0 402 a, R/B#1 402 b, CS#0 403 a and CS#1 403 b). R/B#0 402 a is the pin for transmitting the read/busy state of ‘die 0’ 401 a; and R/B#1 402 b is for ‘die 1’ 401 b. Pin CS#0 403 a is for selecting ‘die 0’ 401 a and CS#1 403 b is for ‘die 1’ 401 b. In other words, ‘die 0’ 401 a and ‘die 1’ 401 b are wired in such way that each die may be selected separately for data transfer operations.
The chips in vertical groups are connected in the following manners:
(1) R/B#g0 d 0 434 a connects the R/B#0 pin 402 a of all chips in ‘group0’ 432 a
(2) R/B#g0 d 1 434 b connects the R/B#1 pin 402 b of all chips in ‘group0’ 432 a
(3) R/B#g1 d 0 436 a connects the R/B#0 pin 402 a of all chips in ‘group1’ 432 b
(4) R/B#g1 d 1 436 b connects the R/B#1 pin 402 b of all chips in ‘group1’ 432 b
(5) R/B#group0 434 connects R/B#g0 d 0 434 a and R/B#g0 d 1 434 b together
(6) R/B#group1 436 connects R/B#g1 d 0 436 a and R/B#g1 d 1 436 b together
(7) CE#0 440 connects the CS#0 pin 403 a of all chips in ‘group0’ 432 a
(8) CE#1 441 connects the CS#1 pin 403 b of all chips in ‘group0’ 432 a
(9) CE#2 442 connects the CS#0 pin 403 a of all chips in ‘group1’ 432 b
(10) CE#3 443 connects the CS#1 pin 403 b of all chips in ‘group1’ 432 b
Accordingly, chip enable (CE) signal is selected to enable the chips, for example, CE#0 440 may be selected to enable ‘die 0’ 401 a of all of the chips in ‘group0’ 432 a, CE#1 to enable ‘die 1’ 401 b of all of the chips in ‘group0’ 432 a, CE#2 to enable ‘die 0’ 401 a of all of the chips in ‘group1’ 432 b, and CE#3 to enable ‘die 1’ 401 b of all of the chips in ‘group1’ 432 b.
The chips in each of the horizontal groups are connected to a respective data channel 430 a-d (i.e., one of the four shown) as follows:
(1) data channel ‘channel0’ 430 a connects all chips in ‘row0’ 431 a
(2) data channel ‘channel1’ 430 b connects all chips in ‘row1’ 431 b
(3) data channel ‘channel2’ 430 c connects all chips in ‘row2’ 431 c
(4) data channel ‘channel3’ 430 d connects all chips in ‘row3’ 431 d
Terms “vertical”, “horizontal”, “column-wise” and “row-wise” used herein are for the purpose of distinctly describing two orthogonal schemes. There is no physical correlation as to how these non-volatile memory chips are orientated. The chips may or may not be aligned vertically or horizontally.
The data channels 430 a-d and horizontal rows of chips are corresponding to each other such that parallel data transfer can be conducted. A set of parallel line FIFO buffers 426 a-d is configured to hold data to be transmitted between a data dispatching unit 422 and the non-volatile memory module 450. The NVMD controller 417 is configured to enable properly ordered and most efficient data transfer from the set of data buffers to a specific vertical group of chips (i.e., CE#0-4) in response to the ready/busy signals received. The data dispatching unit 422 is coupled to a high speed internal bus 425. Also coupled to the high speed bus are a CPU 419, an input/output interface 420 (e.g., SATA, PCI-E), a memory for tracking wear leveling of the non-volatile memory 421, a cache subsystem 423.
A second data structure 460 is substantially similar to the first data structure 450. The difference is that the NOH flag and the set number are not included in the spare area 462. The first data structure 450 is implemented in the SLC while the second data structure 460 is implemented in the MLC, according to one embodiment of the present invention.
The process 500 starts with an ‘IDLE’ state until the NVMD receives a data transfer request from a host computer system (e.g., the host 100) at 502. Along with the data transfer request is a logical sector address (LSA) 202 and type of the data transfer request (i.e., data read or write). Next, at 504, process 500 extracts a tag 204 and an index 206 from the received LSA 202. The received index 206 corresponds to the entry number of the cache directory while the received tag 204 is used for comparing with all of the tags 225 a-n in that cache entry. The process 500 moves to decision 506 to determine whether there is a ‘cache-hit’ or a ‘cache-miss’. If any one of the tags in the N sets of cache entries matches the received tag 204, a ‘cache-hit’ condition is determined, which means data associated with the received LSA 202 in the data transfer request is already stored in the cache subsystem 210. Otherwise, if none of the tags 225 a-n matches the received tag, a ‘cache-miss’ condition is determined, which means that the data associated with the received LSA 202 is not currently stored in the cache subsystem 210. The data transfer operation for these two conditions are very different in the high endurance NVMD 170.
After decision 506, the process 500 checks the data transfer request type at decision 508 to determine whether a data read or write operation is requested. If ‘cache-miss’ and ‘data read’, the process 500 continues to the steps and decisions in
Otherwise in a ‘cache-hit’ and ‘data read’ condition, the process 500 updates the least-recently used (LRU) flag 223 at 512. Next, at 514, the process 500 retrieves the requested data from the ‘cache-hit’ set of the N sets of the cache line with the line offset 208, which is an offset for a particular page and/or sector in the received LSA 202 and then sends the retrieved data back to the host 100. The process 500 goes back to the ‘IDLE’ state for waiting for another data transfer request.
For the case of ‘cache-miss’ and ‘data read’ shown in
If at decision 524, it is determines the requested data is stored in the SLC, the request data is loaded from the SLC at the SPBA into the least-recently used set of the cache line at 526. The process 500 also updates the tag 225 a-n, the LRU flag 223 and data validity flag 224, and then resets the NOH flag 226 a-n to zero, accordingly. Next, at 528, the requested data is retrieved from the just loaded cache line and sent back to the host 100. The process 500 goes back to the ‘IDLE’ state.
The detailed process of step 535 is shown in
Referring back to the condition of ‘cache-hit’ and ‘data write’, the process 500 continues in
If ‘no’, the process 500 allocates a new block (2nd SPBA) in the SLC at 565 c. Next, the process 500 copies the data from the 1st SPBA to the 2nd SPBA with the update from the just written set of the cache line at 565 d. Then, at 565 e, the LTOP lookup table is updated with the 2nd SPBA. Next at decision 565 f, it is determined whether the SLC has been used up to a predefined capacity (e.g., a fixed percentage to ensure at least one available data block for data programming operation). If ‘no’, the process 500 returns. Otherwise at 535, the process 500 moves the lowest hit block from the SLC to a new block in the MLC. The details of step 535 are shown and described in
According to one embodiment of the present invention, the SLC and the MLC are configured with same size data page such that the data movement between the SLC and MLC can be conducted seamlessly in the exemplary process 500.
The first data transfer operation is a ‘data write’ with a ‘cache-hit’ condition shown as example (a) in
The second data transfer operation is a ‘data write’ with a ‘cache-miss’ condition shown as example (b) in
The third data transfer operation is a ‘data read’ with a ‘cache-miss’ in the SLC shown as example (c1) in
The fourth data transfer operation is a ‘data read’ with a ‘cache-miss’ in the MLC shown as example (c2) in
9) Finally, the LTOP lookup table 610 is updated with MPBA ‘123’ replacing SPBA ‘45’.
It is noted that the MLC is not programmed or written unless the SLC has reached its predefined capacity.
If ‘yes’ at decision 706, the process 700 moves to another decision 708, it is determined whether the just read NOH flag contains a higher number than the number of write hits stored in the currently filled set of the cache line. If ‘no’, the process moves to decision 712 similar to the previous test. If ‘yes’, the process 700 loads the data from the SLC to overwrite the data in that set of the cache line and then fills in the corresponding tag and the NOH flag at 710 before moving to decision 712.
If the ‘cache-miss’ condition is determined at decision 806, the process 800 determines a physical address (PBA) corresponding to the received LSA through the LTOP lookup table at 822. Next, at 824, process 800 writes the incoming data into the non-volatile memory module at the PBA. Then at decision 826, it is determined whether there is any free or available cache set, if ‘no’, the least-recently used cache set is recycled for reuse at 828. Otherwise, the process 800 loads the data from PBA to a free cache set at 830. Finally, at 832, the process 800 sets cache set status to be consistent with the state in the non-volatile memory before going back to the ‘IDLE’ state waiting for another data transfer request. The process 800 uses a ‘write-back’ policy for managing the cache subsystem, which is an alternative to the ‘write-thru’ policy employed in the exemplary process 500.
An exemplary probability density function 902 and an exemplary cumulative distribution density function 904 are shown in
In one embodiment, the random selection scheme uses a random number generator or pseudo random number generator to select a number between 1 and a maximum. The maximum may be defined by physical characteristics of the MLC flash memory in a NVMD. For example, a NVMD includes 8 parallel channels (i.e., page buffers), 4 MLC flash memory chips per channel, two dies per chip, two planes per die, 4096 blocks per plane and 8 pages per block, the maximum is 4194304, which is the products of all of the above. If the pseudo random number generator comes out with a number of 3044967 and the probability density function or cumulative distribution function yields a factor of 0.91572386, the actual new physical block number is 2788348=3044967×0.91572386. With a random selection based on such process, the wear leveling should be showing a normal distribution.
The first CPU 1010 is further configured to provide load balance to each of the internal NVMs by evenly distribute the data transfer traffic. Since each of the internal NVMs includes a cache subsystem 1018 and a CPU 1015, a higher data hit rate may be achieved due to only limited amount of data have been requested and accessed.
A second alternative multi-CPU NVMD 1005 is shown in
Although the present invention has been described with reference to specific embodiments thereof, these embodiments are merely illustrative, and not restrictive of, the present invention. Various modifications or changes to the specifically disclosed exemplary embodiments will be suggested to persons skilled in the art. For example, whereas the MLC flash memory has been described and shown using a 128-page block, other numbers of pages per block may also be used. For example, a smaller number such as 32 pages per block may be preferred to reduce the frequencies of writing or programming to a new block. That is because a smaller number of pages would result into less chance to reprogram comparing to larger number of pages. Additionally, whereas SLC and MLC have been shown and described as two types of non-volatile memory with a volatile memory (DRAM) based cache subsystem, other combinations may accomplish the same, for example, phase-change memory may be used to substitute either SLC, MLC or DRAM. In summary, the scope of the invention should not be restricted to the specific exemplary embodiments disclosed herein, and all modifications that are readily suggested to those of ordinary skill in the art should be included within the spirit and purview of this application and scope of the appended claims.
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|US20090196102 *||Feb 3, 2009||Aug 6, 2009||Mosaid Technologies Incorporated||Flexible memory operations in nand flash devices|
|US20090196103 *||Dec 8, 2008||Aug 6, 2009||Mosaid Technologies Incorporated||Non-volatile memory device having configurable page size|
|US20090217136 *||May 29, 2008||Aug 27, 2009||Phison Electronics Corp.||Storage apparatus, controller and data accessing method thereof|
|US20120311245 *||Aug 9, 2012||Dec 6, 2012||Hirokuni Yano||Semiconductor storage device with volatile and nonvolatile memories|
|U.S. Classification||711/117, 711/E12.041|
|Cooperative Classification||G06F12/0246, G11C11/5678, G06F12/0862, G06F13/161, G06F12/123, G06F2212/7203, G11C13/0004, G11C2211/5643, G11C2211/5641, G11C11/5621|
|European Classification||G06F13/16A2, G06F12/08B8, G11C11/56D, G11C13/00R1, G06F12/02D2E2, G11C11/56P|
|May 7, 2008||AS||Assignment|
Owner name: SUPER TALENT ELECTRONICS, INC.,CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YU, I-KANG;CHOW, DAVID Q.;LEE, CHARLES C.;AND OTHERS;SIGNING DATES FROM 20080222 TO 20080501;REEL/FRAME:020916/0348
Owner name: SUPER TALENT ELECTRONICS, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YU, I-KANG;CHOW, DAVID Q.;LEE, CHARLES C.;AND OTHERS;SIGNING DATES FROM 20080222 TO 20080501;REEL/FRAME:020916/0348
|Mar 27, 2014||AS||Assignment|
Owner name: SUPER TALENT TECHNOLOGY, CORP., CALIFORNIA
Free format text: CHANGE OF NAME;ASSIGNOR:SUPER TALENT ELECTRONIC, INC.;REEL/FRAME:032540/0565
Effective date: 20050124
|Sep 2, 2014||FPAY||Fee payment|
Year of fee payment: 4