|Publication number||US7961522 B2|
|Application number||US 12/505,886|
|Publication date||Jun 14, 2011|
|Filing date||Jul 20, 2009|
|Priority date||Aug 18, 2006|
|Also published as||US7567461, US8730737, US9019774, US20080043535, US20090279363, US20110222354, US20140254273|
|Publication number||12505886, 505886, US 7961522 B2, US 7961522B2, US-B2-7961522, US7961522 B2, US7961522B2|
|Original Assignee||Micron Technology, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (73), Referenced by (2), Classifications (9), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a divisional of U.S. patent application Ser. No. 11/506,375, filed Aug. 18, 2006 and issued as U.S. Pat. No. 7,567,461 on Jul. 29, 2009. This application and patent is incorporated by reference herein.
This invention relates to non-volatile memory devices, and, more particularly, to a non-volatile memory device in which the number of programming pulses used to program a row of non-volatile memory cells is limited to the number required to program a sufficient number of cells that any data errors can be corrected by error checking and correcting means.
Electrically erasable and programmable memory devices having arrays of flash memory cells are found in a wide variety of electrical devices. A flash memory cell, also known as a floating gate transistor memory cell, is similar to a field effect transistor, having a source region and a drain region that is spaced apart from the source region to form an intermediate channel region. A floating gate, typically made of doped polysilicon, is disposed over the channel region and is electrically isolated from the channel region by a layer of gate oxide. A control gate is fabricated over the floating gate, and it can also be made of doped polysilicon. The control gate is electrically separated from the floating gate by a dielectric layer. Thus, the floating gate is “floating’ in the sense that it is insulated from the channel, the control gate and all other components of the flash memory cell.
A flash memory cell is programmed by storing charge on the floating gate. The charge thereafter remains on the gate for an indefinite period even after power has been removed from the flash memory device. Flash memory devices are therefore non-volatile. Charge is stored on the floating gate by applying appropriate voltages to the control gate and the drain or source. For example, a negative charge can be placed on the floating gate by grounding the source while applying a sufficiently large positive voltage to the control gate to attract electrons, which tunnel through the gate oxide to the floating gate from the channel region. The voltage applied to the control gate, called a programming voltage, determines the amount of charge residing on the floating gate after programming.
A flash memory cell can be read by applying a positive control gate to source voltage having a magnitude greater than a threshold voltage. The amount of charge stored on the flash memory cell determines the magnitude of the threshold voltage that must be applied to the control gate to allow the flash memory cell to conduct current between the source and the drain. As negative charge is added to the floating gate, the threshold voltage of the flash memory cell increases. During a read operation, a read voltage is applied to the control gate that is large enough to render the cell conductive if no charge is stored on the floating gate, but not large enough to render the cell conductive if charge is stored on the floating gate. During the read operation, the source is coupled to ground, and a positive voltage is applied through a suitable impedance to the drain, which is used as the output terminal of the cell. Therefore, if the floating gate of the flash memory cell is charged, the drain will remain at the positive voltage. If the floating gate of the flash memory cell is not charged, the cell will ground the drain.
Before a flash memory cell can be programmed, it must be erased by removing charge from the floating gate. The cell can be erased by applying a gate-to-source voltage to the cell that has a polarity opposite that used for programming. Specifically, the control gate is grounded, and a large positive voltage is applied to the source to cause the electrons to tunnel through the gate oxide and deplete the charge from the floating gate. In another approach, a relatively large negative voltage is applied to the control gate, and a positive voltage, such as a supply voltage, is applied to the source region.
A typical flash memory device includes a memory array containing a large number of flash memory cells arranged in rows and columns. Two common types of flash memory array architectures are the “NAND” and “NOR” architectures, so called for the logical form in which the basic flash memory cell configuration for each is arranged.
A read operation is performed on a row-by-row basis. When a read operation is to be performed for a selected block, the source line 26 is coupled to ground, and the select gate transistors 24, 28 for that block are turned ON responsive to high SG(D) and SG(S) signals. Also, the bit line 20 for each column is precharged to the supply voltage VCC. Finally, a read voltage is applied to a word select line 30 for the selected row, thereby applying the read voltage to the control gates of all of the flash memory cells 14 in that row. As explained above, the magnitude of the read voltage is sufficient to turn ON all flash memory cells 14 that do not have a charged floating gate, but insufficient to turn ON all cells that have a charged floating gate. A voltage having a higher magnitude is applied to the word select lines 30 for all of the non-selected rows. This voltage is large enough to turn ON the flash memory cells 14 even if their floating gates are storing charge. As a result, the bit line 20 for each column will be low if the cell 14 in that column of the selected row is not storing charge. Otherwise the bit line 20 remains high at VCC. The voltage on each bit line 20 is compared to a reference voltage by a respective sense amplifier (not shown). If the voltage on the bit line 20 is less than the reference voltage, the sense amplifier outputs a voltage corresponding to a “1” binary value of the read data bit. If the voltage on the bit line 20 is greater than the reference voltage, the sense amplifier outputs a voltage corresponding to a “0” binary value of the read data bit.
The select gate transistors 28 shown in
When a selected row of cells 14 are to be programmed, a programming voltage is applied to the word select line 30 for the selected row, and a voltage sufficient to turn ON the remaining cells 14 is applied to the control gates of the remaining flash memory cells 14. Also, the first column select transistor 24 is turned ON and voltages corresponding to the data bits that are to be programmed are applied to the respective bit lines. If the voltage of a bit line 20 is at ground corresponding to a logic “0,” charge will be stored in the floating gate of the flash memory cell 14 in that column of the selected row. Otherwise, a voltage on the bit line 20 corresponding to a logic “1” prevents any charge from being stored on the floating gate. Programming is therefore performed on a row-by-row basis.
The storage capacity of a flash memory array can be increased by storing multiple bits of data in each flash memory cell 14. This can be accomplished by storing multiple levels of charge on the floating gate of each cell 14. These memory devices are commonly referred to as multi-bit or multi-level flash memory cells, known as “MLC memory cells.” In MLC cells, multiple bits of binary data corresponding to distinct threshold voltage levels defined over respective voltage ranges are stored within a single cell. Each distinct threshold voltage level corresponds to a respective combination of data bits. Specifically, the number N of bits requires 2N distinct threshold voltage levels. For example, for a flash memory cell to store 2 bits of data, 4 distinct threshold voltage levels corresponding to bit states 00, 01, 10, and 11 are needed. When reading the state of the memory cell, the threshold voltage level for which the memory cell 14 conducts current corresponds to a combination of bits representing data programmed into the cell. The two or more bits stored in each flash memory cell 14 can be adjacent bits in the same page of data. However, more frequently, one bit is treated as a bit in one page of data, and the other bit is treated as the corresponding bit in an adjacent page of data. The bit states assigned to respective charge levels are normally the same for all rows of memory cells in an array. The bit states assigned to the flash memory cells in the array are usually implemented in hardware and thus cannot be changed during operation of the flash memory device.
A multi-level flash memory cell is programmed by applying a programming voltage to the control gate and holding the drain to a constant voltage over a proper time period to store enough charge in the floating gate to move the threshold voltage Vt of the flash memory cell 14 to a desired level. This threshold voltage level Vt represents a bit state of the cell corresponding to the combination of data bits stored in the cell. As with programming single-level flash cells, programming of multi-level cells is performed on a row-by-row basis.
As a result of the very large number of components in high capacity memory devices, including flash memory devices, it is not economically feasible to manufacture memory devices without any defects. If one allows memory devices to be manufactured with a few defective memory cells, the price of the memory device can be substantially reduced since much greater manufacturing yield can be attained. After manufacture, defective rows or columns of cells are detected during testing, and repair solutions incorporated into the memory devices themselves are used to perform repair these defects. In a NAND memory device, bit state errors in one or more memory cells in a row are normally corrected by conventional error checking and correcting (“ECC”) circuitry included in the memory device or a memory controller connected to the memory device. In the case of a larger number of errors in a row, such as those resulting from row-to-row shorts, the block containing the row is normally tagged as being defective, and a redundant block is substituted for the defective block. Column-to-column shorts are normally repaired by substituting a redundant column of memory cells for each defective column.
There is also a limit to the precision with which circuitry can store an analog value on the floating gate of a flash cell, particularly where multiple levels of charge must be stored. In particular, because of process variations, the flash cells across an entire array and even across a single row may not all behave identically. For these reasons, conventional circuitry for programming or erasing the flash cells typically perform these tasks in an iterative manner. Specifically, the circuitry applies a programming pulse having an appropriate duration and magnitude to a word select line 30. The pulse is applied to the control gate of each of the cells 14 to charge the floating gate to target levels corresponding to bit state values to which the cells are to be programmed. The cells are then interrogated to verify that the floating gate of each cell has been charged to that level. If the floating gate of a cell has been sufficiently charged, the voltage applied to the bit line for the cell is altered so that the floating gate will not be further charged if additional programming pulses are applied to the floating gate. The circuitry again applies a programming pulse to the control gate of each of the cells, and the cells are again verified. This process is repeated until the floating gates have been charged to the target levels. As can be appreciated, it can require a considerable period of time to program flash memory cells in this iterative manner. Additionally, each time the programming pulse is applied to a word select line 30, the pulse can inadvertently couple charge to floating gates of the programmed memory cells 14 in the corresponding row or an adjacent row. This problem is particularly acute for multi-level flash memory cells.
One approach to preventing an excessive number of programming pulses from being applied to a row is to simply consider the row to be properly programmed when the proper programming of less than all of the memory cells in the row have been verified. Using this technique, a “pseudo pass” condition is considered to exist even though one or more of the memory cells are programmed to erroneous bit states. These bit state errors can be corrected when the row is read using the conventional ECC techniques described above. However, these conventional ECC techniques are usually limited to repairing a relatively small number of data bit errors in each row. As a result of the large number of memory cells in the rows of conventional memory devices, the number of data bit errors existing after one or a few programming pulses have been applied to a row can exceed the number of data bit errors that can be corrected by ECC circuitry. To reduce the number of data bit errors to a level that can be corrected by the ECC circuitry, it is sometimes necessary to apply a long sequence of programming pulses to the word select line of a row of memory cells being programmed. For example, if the ECC circuitry is capable of correcting up to four data errors, programming pulses are applied until the number of programming errors has been reduced to four. As explained above, this can adversely affect the programmed state of previously programmed cells. Although this problem is described in the context of flash memory devices, it also exists in other types of non-volatile memory devices.
There is, therefore, a need for a flash memory device that allows a larger number of data bit errors to be corrected in each row of memory cells, thereby reducing the number of required programming pulses and/or allowing the data bit errors to be corrected by conventional ECC techniques.
A flash memory device 100 of conventional design that can be used according to one example of the invention is shown in
Unlike conventional dynamic random access memory (“DRAM”) devices and static random access memory (“SRAM”) devices, command, address and write data signals are not applied to the flash memory device 100 through respective command, address and data buses. Instead, most command signals, the address signals and the write data signals are applied to the memory device 100 as sets of sequential input/output (“I/O”) signals transmitted through an I/O bus 134. Similarly, read data signals are output from the flash memory device 100 through the I/O bus 134. The I/O bus is connected to an I/O control unit 140 that routes the signals between the I/O bus 134 and an internal data bus 142, an address register 144, a command register 146 and a status register 148.
The flash memory device 100 also includes a control logic unit 150 that receives a number of control signals, including an active low chip enable signal CE#, a command latch enable signal CLE, an address latch enable signal ALE, an active low write enable signal WE#, an active low read enable signal RE#, and an active low write protect WP# signal. When the chip enable signal CE# is active low, command, address and data signals may be transferred between the memory device 100 and a memory access device (not shown). When the command latch enable signal CLE is active high and the ALE signal is low, the control logic unit 150 causes the I/O control unit 140 to route signals received through the I/O bus 134 to the command register 146 responsive to the rising edge of the WE# signal. Similarly, when the address latch enable signal ALE is active high and the CLE signal is low, the I/O control unit 140 routes signals received through the I/O bus 134 to the address register 146 responsive to the rising edge of the WE# signal. The write enable signal WE# is also used to gate write data signals from the memory access device (not shown) to the memory device 100, and the read enable signal RE# is used to gate the read data signals from the memory device 100 to the memory access device (not shown). The I/O control unit 140 transfers the write data signals and read data signals between the I/O bus 134 and the internal data bus 142 when the CLE and ALE signals are both low. Finally, an active low write protect signal WP# prevents the memory device 100 from inadvertently performing programming or erase functions. The control logic unit 150 is also coupled to the internal data bus 142 to receive write date from the I/O control unit for reasons that will be explained below.
The status register 148 can be read responsive to a read status command. After the read status command, all subsequent read commands will result in status data being read from the status register 148 until a subsequent read status command is received. The status data read from the status register 148 provides information about the operation of the memory device 100, such as whether programming and erase operations were completed without error.
The address register 146 stores row and column address signals applied to the memory device 100. The address register 146 then outputs the row address signals to a row decoder 160 and the column address signals to a column decoder 164. The row decoder 160 asserts word select lines 30 (
In response to the memory commands decoded by the control logic unit 150, the flash memory cells in the array 130 are erased, programmed, or read. The memory array 130 is programmed on a row-by-row or page-by-page basis. After the row address signals have been loaded into the address register 146, the I/O control unit 140 routes write data signals to a cache register 170. The write data signals are stored in the cache register 170 in successive sets each having a size corresponding to the width of the I/O bus 134. The cache register 170 sequentially stores the sets of write data signals for an entire row or page of flash memory cells in the array 130. All of the stored write data signals are then used to program a row or page of memory cells in the array 130 selected by the row address stored in the address register 146. In a similar manner, during a read operation, data signals from a row or page of memory cells selected by the row address stored in the address register 146 are stored in a data register 180. Sets of data signals corresponding in size to the width of the I/O bus 134 are then sequentially transferred through the I/O control unit 140 from the data register 180 to the I/O bus 134. Although the array 130 is typically read on a row-by-row or page-by-page basis, a selected portion of a selected row or page may be read by specifying a corresponding column address.
The flash memory device 130 also includes an NMOS transistor 186 having its gate coupled to receive a signal from the control logic unit 150. When the memory device 100 is busy processing a programming, erase or read command, the control logic unit 150 outputs a high signal to cause the transistor 186 to output an active low read/busy signal R/B#. At other times, the transistor 186 is turned OFF to indicate to a memory access device that the device 100 is able to accept and process memory commands.
As explained above, during a write operation, the control logic unit 150 causes the write data signals stored in the cache register 170 to program a row or page of memory cells in the array 130. As also explained above, this is accomplished in an iterative manner in which the control logic unit 150 repetitively performs program and verify operations. To determine when a sufficient number of memory cells in a row or page have been properly programmed, the cache register 170 includes a pseudo pass detector 190. The pseudo pass detector 190 outputs a signal to the control logic unit 150 when a sufficient number of cells have been programmed that programming of the row or page can be considered complete.
A pseudo pass detector 190 a of conventional design is shown in
The current signals from all of the stages of the comparator 200 are applied through the common line 202 to an analog logic circuit 204. The analog logic circuit 204 generate a pseudo pass bit indicative of whether or not the number of improperly programmed memory cells exceed a predetermined number. The analog logic circuit 204 performs this function by outputting a pseudo pass bit having one binary value if the total current drawn by all the current signals from the respective stages of the comparator 200 do not exceed a predetermined value, and a different binary value if the total current drawn exceeds the predetermined value. The analog logic circuit 204 may be implemented, for example, by biasing a node high through a fixed resistance and detecting when the total current draw from the comparators 200 is sufficient to pull the voltage of the node below a predetermined threshold voltage.
In one example, the analog logic circuit 204 outputs a low pseudo pass bit to the control logic unit 150 as long as the number of improperly programmed memory cells is less than 5, i.e., 4. In response, the control logic unit 150 terminates, repetitively programming and verifying the data being stored in the row of memory cells being programmed. The 4 or fewer erroneous data signals can then be corrected by conventional ECC circuitry (not shown) in the memory device 100 or in a flash memory controller (not shown) connected to the memory device 100. However, if the number of improperly programmed memory cells is 5 or greater, the analog logic circuit 204 outputs a high pseudo pass bit. The control logic unit 150 can then continue to repetitively program and verify the data being stored in the row of memory cells being programmed.
The conventional pseudo pass detector 190 a uses an analog logic circuit 204 rather than a set of logic gates because the large number of signals that it receives, typically in the thousands, would require a large number of logic gates. The required number of logic gates would consume a great deal of space on an integrated circuit chip, and might draw a significant amount of power. The analog logic circuit 204 can be implemented with significantly less circuitry and draw significantly less power. However, the logic function performed by the analog logic circuit 204 can easily be implemented by digital means in a manner that will be apparent to one skilled in the art.
One problem with the conventional pseudo pass detector 190 a shown in
A pseudo pass detector 190 b according to one example of the invention, is shown in
In one example of the invention, each row of cells in the array stores 2048 bytes of data, and the data bytes are transferred from the memory device 100 in sets of 512 bytes. These data bytes are transferred to a flash memory controller (not shown) that can correct 4 or fewer data bit errors. The current output from the bit error current source 230 thus corresponds to 4 bit errors.
A pseudo pass detector 190 c, according to another example of the invention, is shown in
In one example of the invention, each row of cells in the array stores 2048 bytes of data, and the data bytes are transferred from the memory device 100 in sets of 512 bytes. These data bytes are transferred to a flash memory controller (not shown) that can correct 4 or fewer data bit errors. The number 4 is therefore stored in the bit error register 280.
Although the present invention has been described with reference to the disclosed embodiments, persons skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention. For example, although the pseudo pass detectors 190 b,c have been explained in the context of flash memory devices, they may also be used in other types of non-volatile memory devices. Such modifications are well within the skill of those ordinarily skilled in the art. Accordingly, the invention is not limited except as by the appended claims.
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|U.S. Classification||365/185.22, 365/185.09, 365/185.18|
|Cooperative Classification||G11C16/3436, G11C8/10, G11C16/10|
|European Classification||G11C16/34V, G11C8/10|
|Aug 9, 2011||CC||Certificate of correction|
|Nov 13, 2014||FPAY||Fee payment|
Year of fee payment: 4