|Publication number||US7981576 B2|
|Application number||US 12/890,494|
|Publication date||Jul 19, 2011|
|Filing date||Sep 24, 2010|
|Priority date||Apr 6, 2006|
|Also published as||CN101135861A, CN101135861B, CN102033422A, CN102033422B, EP1843202A2, EP1843202A3, EP1843202B1, EP2267530A1, US7824826, US8632930, US20080020296, US20110014552, US20110236808|
|Publication number||12890494, 890494, US 7981576 B2, US 7981576B2, US-B2-7981576, US7981576 B2, US7981576B2|
|Inventors||Duan-Fu Stephen Hsu, Sangbong Park, Douglas Van Den Broeke, Jang Fung Chen|
|Original Assignee||Asml Masktools B.V.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (44), Non-Patent Citations (10), Referenced by (5), Classifications (12), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a continuation of U.S. patent application Ser. No. 11/783,261, filed on Apr. 6, 2007, now U.S. Pat. No. 7,824,826 issued Nov. 2, 2010 claims priority to U.S. provisional patent application No. 60/789,560, filed on Apr. 6, 2006, entitled “Method for Performing Dark Field Double Dipole Lithography (DDL)”, both of which are incorporated herein by reference in their entireties.
The present invention provides a novel process for forming masks for use in double dipole lithography, and more specifically, a method for forming masks for use in dark field double dipole lithography process. In addition, the present invention relates to a device manufacturing method using a lithographic apparatus comprising a radiation system for providing a projection beam of radiation; a mask table for holding a reticle, serving to pattern the projection beam; a substrate table for holding a substrate; and a projection system for projecting the patterned projection beam onto a target portion of the substrate.
Lithographic projection apparatus (tools) can be used, for example, in the manufacture of integrated circuits (ICs). In such a case, the mask contains a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. comprising one or more dies) on a substrate (silicon wafer) that has been coated with a layer of radiation-sensitive material (resist). In general, a single wafer will contain a whole network of adjacent target portions that are successively irradiated via the projection system, one at a time. In one type of lithographic projection apparatus, each target portion is irradiated by exposing the entire mask pattern onto the target portion in one go; such an apparatus is commonly referred to as a wafer stepper. In an alternative apparatus—commonly referred to as a step-and-scan apparatus—each target portion is irradiated by progressively scanning the mask pattern under the projection beam in a given reference direction (the “scanning” direction) while synchronously scanning the substrate table parallel or anti-parallel to this direction; since, in general, the projection system will have a magnification factor M (generally <1), the speed V at which the substrate table is scanned will be a factor M times that at which the mask table is scanned. More information with regard to lithographic apparatus as here described can be gleaned, for example, from U.S. Pat. No. 6,046,792, incorporated herein by reference.
In a manufacturing process using a lithographic projection apparatus, a mask pattern is imaged onto a substrate that is at least partially covered by a layer of radiation-sensitive material (resist). Prior to this imaging step, the substrate may undergo various procedures, such as priming, resist coating and a soft bake. After exposure, the substrate may be subjected to other procedures, such as a post-exposure bake (PEB), development, a hard bake and measurement/inspection of the imaged features. This array of procedures is used as a basis to pattern an individual layer of a device, e.g. an IC. Such a patterned layer may then undergo various processes such as etching, ion-implantation (doping), metallization, oxidation, chemo-mechanical polishing, etc., all intended to finish off an individual layer. If several layers are required, then the whole procedure, or a variant thereof, will have to be repeated for each new layer. Eventually, an array of devices will be present on the substrate (wafer). These devices are then separated from one another by a technique such as dicing or sawing. Thereafter, the individual devices can be mounted on a carrier, connected to pins, etc. Further information regarding such processes can be obtained, for example, from the book “Microchip Fabrication: A Practical Guide to Semiconductor Processing”, Third Edition, by Peter van Zant, McGraw Hill Publishing Co., 1997, ISBN 0-07-O67250-4, incorporated herein by reference.
The lithographic tool may be of a type having two or more substrate tables (and/or two or more mask tables). In such “multiple stage” devices the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposures. Twin stage lithographic tools are described, for example, in U.S. Pat. No. 5,969,441 and WO 98/40791, and incorporated herein by reference.
The photolithography masks referred to above comprise geometric patterns corresponding to the circuit components to be integrated onto a silicon wafer. The patterns used to create such masks are generated utilizing CAD (computer-aided design) programs, this process often being referred to as EDA (electronic design automation). Most CAD programs follow a set of predetermined design rules in order to create functional masks. These rules are set by processing and design limitations. For example, design rules define the space tolerance between circuit devices (such as gates, capacitors, etc.) or interconnect lines, so as to ensure that the circuit devices or lines do not interact with one another in an undesirable way.
Of course, one of the goals in integrated circuit fabrication is to faithfully reproduce the original circuit design on the wafer (via the mask). Another goal is to use as much of the semiconductor wafer real estate as possible. As the size of an integrated circuit is reduced and its density increases, however, the CD (critical dimension) of its corresponding mask pattern approaches the resolution limit of the optical exposure tool. The resolution for an exposure tool is defined as the minimum feature that the exposure tool can repeatedly expose on the wafer. The resolution value of present exposure equipment often constrains the CD for many advanced IC circuit designs.
Furthermore, as the demand continues for even higher performance of semiconductor devices, the design rule shrink rate is outpacing the progress of both of the exposure wavelength reduction and the advancement of high Numerical Aperture (NA) lenses. This factor has presented a challenge to lithographers to push optical lithography beyond the limit that was thought possible a few years ago. As is known, Resolution Enhancement Techniques (RETs) have become indispensable in low k1 optical lithography. Strong Off-Axis Illumination (OAI), which uses 2-beam imaging with symmetrical 0th and 1st orders in the lens pupil, can greatly enhance resolution and contrast. Dipole illumination is the most extreme case of OAI, and is capable of providing better imaging contrast with improved process latitude for very low k1 imaging.
Current techniques utilizing dipole illumination typically encompass the use of a multiple exposure process in which a first exposure is utilized to image features oriented in a first direction (i.e., horizontally oriented features) and a second exposure is utilized to image features oriented in a second direction (i.e., vertically oriented features). This is accomplished by converting the target pattern into, for example, two masks having horizontal and vertical orientations, respectively. Once the target pattern is converted in this manner, a y-dipole exposure is utilized to image the horizontally oriented features, and a x-dipole exposure is utilized to image the vertically oriented features.
As known dipole imaging techniques utilize a clear field mask, one important aspect of double dipole illumination is that when imaging the horizontally oriented features, the vertically oriented features must be protected (i.e., shielded) so the vertically oriented features are not degraded. The opposite is true when vertically oriented features are imaged (i.e., the horizontally oriented features must be protected). This shielding requirement can lead to mask making complications as well as limit the overall performance of the imaging process (see, e.g., U.S. Pat. No. 7,138,212)
Accordingly, there exists a need for a method which allows for performing double dipole lithography utilizing a dark field mask so as to eliminate the complications that result from the shielding requirements necessary when utilizing clear field masks in a double dipole lithography process.
In an effort to solve the foregoing needs, it is one object of the present invention to provide a method for performing dark field double dipole lithography. As noted above, by utilizing a dark field in the imaging process, it is possible to eliminate the issues associated with shielding previously imaged features when utilizing a clear field imaging process.
More specifically, the present invention relates to a method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
The present invention also relates to a computer readable medium configured to store program instructions for execution by a processor. The program instructions enable the processor to generate files corresponding to complementary masks for use in a dark field double dipole imaging process. The generation of the files includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The generation of the files further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
Although specific reference may be made in this text to the use of the invention in the manufacture of ICs, it should be explicitly understood that the invention has many other possible applications. For example, it may be employed in the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal display panels, thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “reticle”, “wafer” or “die” in this text should be considered as being replaced by the more general terms “mask”, “substrate” and “target portion”, respectively.
In the present document, the terms “radiation” and “beam” are used to encompass all types of electromagnetic radiation, including ultraviolet radiation (e.g. with a wavelength of 365, 248, 193, 157 or 126 nm) and EUV (extreme ultra-violet radiation, e.g. having a wavelength in the range 5-20 nm).
The term mask as employed in this text may be broadly interpreted as referring to generic patterning means that can be used to endow an incoming radiation beam with a patterned cross-section, corresponding to a pattern that is to be created in a target portion of the substrate; the term “light valve” can also be used in this context. Besides the classic mask (transmissive or reflective; binary, phase-shifting, hybrid, etc.), examples of other such patterning means include:
a) A programmable mirror array. An example of such a device is a matrix-addressable surface having a viscoelastic control layer and a reflective surface. The basic principle behind such an apparatus is that (for example) addressed areas of the reflective surface reflect incident light as diffracted light, whereas unaddressed areas reflect incident light as undiffracted light. Using an appropriate filter, the said undiffracted light can be filtered out of the reflected beam, leaving only the diffracted light behind; in this manner, the beam becomes patterned according to the addressing pattern of the matrix-addressable surface. The required matrix addressing can be performed using suitable electronic means. More information on such mirror arrays can be gleaned, for example, from U.S. Pat. No. 5,296,891 and U.S. Pat. No. 5,523,193, which are incorporated herein by reference.
b) A programmable LCD array. An example of such a construction is given in U.S. Pat. No. 5,229,872, which is incorporated herein by reference.
The method of the present invention provides important advantages over the prior art. Most importantly, by utilizing a dark field mask in the double dipole imaging process, it is possible to eliminate the issues associated with shielding previously imaged features when utilizing a clear field imaging process.
Additional advantages of the present invention will become apparent to those skilled in the art from the following detailed description of exemplary embodiments of the present invention.
The invention itself, together with further objects and advantages, can be better understood by reference to the following detailed description and the accompanying drawings.
As explained in more detail below, the preferred embodiment of the present invention provides a method and apparatus for performing dark field double dipole lithography “DDL”. Specifically, the present invention provides a method for decomposing a target pattern into a first mask to be imaged utilizing a first dipole illumination (i.e., x-dipole) and a second mask to be imaged utilizing a second dipole illumination (i.e., y-dipole), where the mask utilize dark field imaging. Prior to discussing the present invention, a brief discussion of clear field and dark field imaging is provided.
Clear field DDL, which can be utilized with immersion and polarization (as can dark field), is a good resolution enhancement technique “RET” solution for various imaging tasks, such as imaging a poly-gate layer. Advantages associated with the clear field DDL techniques are, for example, that it resolves the scalability and printability problem for scattering bars (SB) or assist features (AF); allows printing devices using high contrast dipole illumination; and enables application of linear polarization for patterning device structures based on model based layout conversion methods.
As is shown, the x-dipole illumination provides the best NILS and best Imin in both the clear field and dark field cases. C-quad has the worst contrast and highest Imin (in the clear field case, and lowest Imin in the dark field case) which is due to the fact that only 25% of the first-order diffracted light is contributing to imaging while for the x-dipole, 50% of the 1st order diffracted light is captured for imaging. It is noted that for the clear field case, the imaging threshold for all three illuminations is very close to 0.35 of intensity level, thus the dose required to print to the line CD target should be comparable. For both clear field and dark field cases, dipole gives the best image quality while c-quad is the worst of the three.
In order to understand the fundamental difference between clear field and dark field imaging under dipole illumination, it is first necessary to understand the difference in the respective diffraction patterns. Consider a point on the source and a 1-D grating (see,
From Equation 1, it is clear that for a dark field mask with a fixed trench CD, the larger the pitch, the smaller the 0th diffraction order. Babinet's principle states that the diffraction pattern of two complementary masks have the same diffraction pattern except the 0th order. Babinet's principle can be written as:
A clear(f x)+A dark(f x)=δ(f x), Equation 3
From Equation 3, the only difference between the clear field mask and the dark field mask is amplitude of the 0th diffraction order. The 1st diffractive order has the same amplitude with the opposite sign.
From Equation 4, it is evident that for a clear field mask, the larger the pitch, the lower the 0th diffraction order. The above discussions only consider one point from the source, but it is useful to understand the example in
For dark field imaging, it is important to have sufficient energy to clear up the resist for patterning trenches which are mainly contributed by 0th diffraction order, even though the 0th diffraction order does not contribute to intensity modulation. For partial coherent imaging, the overlaps of each of the diffraction orders within the NA need to be considered and the energy captured by the lens pupil per diffraction order needs to be computed.
When utilizing clear field DDL, it is typically necessary to use “full-sized” scattering bars (FSB) in order to achieve a robust through-pitch process window. Further, as noted above, the larger the pitch, the higher the 0th diffraction order, so it is necessary to add shielding for the critical features in the respective low contrast orientation. Further, in clear field DDL, the sum of the total exposure can trim away the FSB without leaving the print residues. This cannot be done in dark field DDL. However, in order to improve the depth of focus for a manufacturing-worthy process, “dark-field assist features (AF)” (i.e., which are formed as slots and correspond to SBs), or sub-resolution assist slots can be added during the optical proximity correction “OPC” process. It is noted that such sub-resolution assist features are also referred to as ASBs and assist features herein.
It can be problematic to apply the dark field ASB slot for 45 nm node and beyond. Specifically, as the width of a dark field ASB slot on the 4× reticle becomes less than the exposure wavelength, Kirchhoff scalar diffraction theory starts to break down and it over predicts ASB slot intensity level. Referring to
For a double exposure process, relative intensity level from two exposures cannot be directly summed. However, the dose and photo-acid that is generated from the two exposures are cumulative. For chemical amplified resist, the photo-acid concentration is given by Eq. 6.
H(x,y)≈1−e−cl(x,y)t∝I(x,y) Equation 6
From Eq. 6, it can be seen that intensity is a good approximation for photo acid generation and analyzing double exposure imaging. It is noted that in the following discussion, the illumination settings include 1.2 NA x-dipole and y-dipole where σ_out=0.98, σ_in =0.53 with y and x linear polarization, respectively. In accordance with DDL imaging process of the present invention, in order to print the same trench printed in
More importantly, the double exposure simulation result illustrated in
More specifically, in Steps 91 and 92, the bias for the low contrast feature of the given mask is optimized utilizing, for example, a suitable simulation model which operates to maximize a defined criteria, such as for example, but not limited to, DOF, MEF, NILS, ILS, contrast, etc. As such, in Step 91, as shown in
The method of the present invention provides important advantages over the prior art. Most importantly, by utilizing a dark field mask in the double dipole imaging process, it is possible to eliminate the issues associated with shielding previously imaged features when utilizing a clear field imaging process.
The software functionalities of such a computer system involve programming, including executable code, may be used to implement the above described OPC method for placing assist features within a given target pattern. The software code is executable by the general-purpose computer. In operation, the code and possibly the associated data records are stored within a general-purpose computer platform. At other times, however, the software may be stored at other locations and/or transported for loading into the appropriate general-purpose computer systems. Hence, the embodiments discussed above involve one or more software products in the form of one or more modules of code carried by at least one machine-readable medium. Execution of such code by a processor of the computer system enables the platform to implement the catalog and/or software downloading functions, in essentially the manner performed in the embodiments discussed and illustrated herein.
As used herein, terms such as computer or machine “readable medium” refer to any medium that participates in providing instructions to a processor for execution. Such a medium may take many forms, including but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as any of the storage devices in any computer(s) operating as one of the server platform, discussed above. Volatile media include dynamic memory, such as main memory of such a computer platform. Physical transmission media include coaxial cables; copper wire and fiber optics, including the wires that comprise a bus within a computer system. Carrier-wave transmission media can take the form of electric or electromagnetic signals, or acoustic or light waves such as those generated during radio frequency (RF) and infrared (IR) data communications. Common forms of computer-readable media therefore include, for example: a floppy disk, a flexible disk, hard disk, magnetic tape, any other magnetic medium, a CD-ROM, DVD, any other optical medium, less commonly used media such as punch cards, paper tape, any other physical medium with patterns of holes, a RAM, a PROM, and EPROM, a FLASH-EPROM, any other memory chip or cartridge, a carrier wave transporting data or instructions, cables or links transporting such a carrier wave, or any other medium from which a computer can read programming code and/or data. Many of these forms of computer readable media may be involved in carrying one or more sequences of one or more instructions to a processor for execution.
a radiation system Ex, IL, for supplying a projection beam PB of radiation. In this particular case, the radiation system also comprises a radiation source LA;
a first object table, (mask table) MT provided with a mask holder for holding a mask MA (e.g. a reticle), and connected to first positioning means for accurately positioning the mask with respect to item PL;
a second object table (substrate table) WT provided with a substrate holder for holding a substrate W (e.g. a resist-coated silicon wafer), and connected to second positioning means for accurately positioning the substrate with respect to item PL;
a projection system (“lens”) PL (e.g. a refractive, catoptric or catadioptric optical system) for imaging an irradiated portion of the mask MA onto a target portion C (e.g. comprising one or more dies) of the substrate W.
As depicted herein, the apparatus is of a transmissive type (i.e. has a transmissive mask). However, in general, it may also be of a reflective type, for example (with a reflective mask). Alternatively, the apparatus may employ another kind of patterning means as an alternative to the use of a mask; examples include a programmable mirror array or LCD matrix.
The source LA (e.g. a mercury lamp, excimer laser or plasma discharge source) produces a beam of radiation. This beam is fed into an illumination system (illuminator) IL, either directly or after having traversed conditioning means, such as a beam expander Ex, for example. The illuminator IL may comprise adjusting means AM for setting the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in the beam. In addition, it will generally comprise various other components, such as an integrator IN and a condenser CO. In this way, the beam PB impinging on the mask MA has a desired uniformity and intensity distribution in its cross-section.
It should be noted with regard to
The beam PB subsequently intercepts the mask MA, which is held on a mask table MT. Having traversed the mask MA, the beam PB passes through the lens PL, which focuses the beam PB onto a target portion C of the substrate W. With the aid of the second positioning means (and interferometric measuring means IF), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning means can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval of the mask MA from a mask library, or during a scan. In general, movement of the object tables MT, WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which are not explicitly depicted in
The depicted tool can be used in two different modes:
In step mode, the mask table MT is kept essentially stationary, and an entire mask image is projected in one go (i.e. a single “flash”) onto a target portion C. The substrate table WT is then shifted in the x and/or y directions so that a different target portion C can be irradiated by the beam PB;
In scan mode, essentially the same scenario applies, except that a given target portion C is not exposed in a single “flash”. Instead, the mask table MT is movable in a given direction (the so-called “scan direction”, e.g. the y direction) with a speed v, so that the projection beam PB is caused to scan over a mask image; concurrently, the substrate table WT is simultaneously moved in the same or opposite direction at a speed V=Mv, in which M is the magnification of the lens PL (typically, M=¼ or ⅕). In this manner, a relatively large target portion C can be exposed, without having to compromise on resolution.
In addition, the concepts disclosed herein may simulate or mathematically model any generic imaging system for imaging sub wavelength features, and may be especially useful with emerging imaging technologies capable of producing wavelengths of an increasingly smaller size. Emerging technologies already in use include EUV (extreme ultra violet) lithography that is capable of producing a 193 nm wavelength with the use of a ArF laser, and even a 157 nm wavelength with the use of a Fluorine laser. Moreover, EUV lithography is capable of producing wavelengths within a range of 20-5 nm by using a synchrotron or by hitting a material (either solid or a plasma) with high energy electrons in order to produce photons within this range. Because most materials are absorptive within this range, illumination may be produced by reflective mirrors with a multi-stack of Molybdenum and Silicon. The multi-stack mirror has a 40 layer pairs of Molybdenum and Silicon where the thickness of each layer is a quarter wavelength. Even smaller wavelengths may be produced with X-ray lithography. Typically, a synchrotron is used to produce an X-ray wavelength. Since most material is absorptive at x-ray wavelengths, a thin piece of absorbing material defines where features would print (positive resist) or not print (negative resist).
It is also noted that while the concepts disclosed herein may be used for imaging on a substrate such as a silicon wafer, it shall be understood that the disclosed concepts may be used with any type of lithographic imaging systems, e.g., those used for imaging on substrates other than silicon wafers.
Although certain specific embodiments of the present invention have been disclosed, it is noted that the present invention may be embodied in other forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims, and all changes that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5229872||Jan 21, 1992||Jul 20, 1993||Hughes Aircraft Company||Exposure device including an electrically aligned electronic mask for micropatterning|
|US5296891||May 2, 1991||Mar 22, 1994||Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.||Illumination device|
|US5446521||Oct 7, 1994||Aug 29, 1995||Intel Corporation||Phase-shifted opaquing ring|
|US5523193||Dec 21, 1994||Jun 4, 1996||Texas Instruments Incorporated||Method and apparatus for patterning and imaging member|
|US5546225||May 31, 1995||Aug 13, 1996||Nikon Corporation||High resolution printing technique by using improved mask pattern and improved illumination system|
|US5841517||Aug 8, 1995||Nov 24, 1998||Noritsu Koki Co., Ltd.||Printer system for printing combined images on a same photosensitive sheet|
|US5881125||Sep 25, 1992||Mar 9, 1999||Intel Corporation||Attenuated phase-shifted reticle using sub-resolution pattern|
|US5969441||Oct 10, 1997||Oct 19, 1999||Asm Lithography Bv||Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device|
|US6046792||Mar 6, 1997||Apr 4, 2000||U.S. Philips Corporation||Differential interferometer system and lithographic step-and-scan apparatus provided with such a system|
|US6255024||Mar 30, 2000||Jul 3, 2001||Micron Technology, Inc.||Use of attenuating phase-shifting mask for improved printability of clear-field patterns|
|US6268091||Mar 28, 2000||Jul 31, 2001||Micron||Subresolution grating for attenuated phase shifting mask fabrication|
|US6553562||Nov 5, 2001||Apr 22, 2003||Asml Masktools B.V.||Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques|
|US6671035||Dec 12, 2000||Dec 30, 2003||Asml Netherlands B.V.||Illuminator for a lithography apparatus, a lithography apparatus comprising such an illuminator, and a manufacturing method employing such a lithography apparatus|
|US6745380||Sep 3, 2002||Jun 1, 2004||Infineon Technologies Ag||Method for optimizing and method for producing a layout for a mask, preferably for use in semiconductor production, and computer program therefor|
|US6792591||Feb 27, 2002||Sep 14, 2004||Asml Masktools B.V.||Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs|
|US6807662||Jul 9, 2002||Oct 19, 2004||Mentor Graphics Corporation||Performance of integrated circuit components via a multiple exposure technique|
|US6811954||Feb 25, 2000||Nov 2, 2004||Renesas Technology Corp.||Semiconductor integrated circuit device and method of manufacturing the same, and method of manufacturing masks|
|US6851103||Mar 25, 2003||Feb 1, 2005||Asml Masktools, B.V.||Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography|
|US6855486||Sep 28, 2000||Feb 15, 2005||Asml Netherlands B.V.||Lithographic method and apparatus|
|US6875545||Nov 27, 2002||Apr 5, 2005||Asml Masktools B.V.||Method of removing assist features utilized to improve process latitude|
|US6915505||Mar 25, 2003||Jul 5, 2005||Asml Masktools B.V.||Method and apparatus for performing rule-based gate shrink utilizing dipole illumination|
|US7138212||Nov 12, 2003||Nov 21, 2006||Asml Masktools B.V.||Method and apparatus for performing model-based layout conversion for use with dipole illumination|
|US7246342||Jul 25, 2003||Jul 17, 2007||Asml Masktools B.V.||Orientation dependent shielding for use with dipole illumination techniques|
|US7666554||Feb 23, 2010||Asml Masktools, B.V.||Method and apparatus for performing model-based layout conversion for use with dipole illumination|
|US7681171||Apr 12, 2006||Mar 16, 2010||Asml Masktooks B.V.||Method, program product and apparatus for performing double exposure lithography|
|US20020166107||Nov 5, 2001||Nov 7, 2002||Luigi Capodieci||Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques|
|US20030082463||Oct 9, 2002||May 1, 2003||Thomas Laidig||Method of two dimensional feature model calibration and optimization|
|US20040003368||Mar 25, 2003||Jan 1, 2004||Hsu Stephen D.||Method and apparatus for performing rule-based gate shrink utilizing dipole illumination|
|US20040005089||Jan 31, 2003||Jan 8, 2004||Mentor Graphics Corporation||Contrast based resolution enhancing technology|
|US20040139418||Jul 25, 2003||Jul 15, 2004||Xuelong Shi||Automatic optical proximity correction (OPC) rule generation|
|US20050102648||Jul 25, 2003||May 12, 2005||Hsu Stephen D.||Orientation dependent shielding for use with dipole illumination techniques|
|US20060277521||Apr 12, 2006||Dec 7, 2006||Chen Jang F||Method, program product and apparatus for performing double exposure lithography|
|US20080020296||Apr 6, 2007||Jan 24, 2008||Hsu Duan-Fu S||Method and apparatus for performing dark field double dipole lithography (DDL)|
|EP1091252A2||Sep 28, 2000||Apr 11, 2001||Asm Lithography B.V.||Lithographic method and apparatus|
|EP1152289A2||Apr 27, 2001||Nov 7, 2001||ASML Masktools Netherlands B.V.||Hybrid phase-shift mask|
|EP1308780A2||Nov 4, 2002||May 7, 2003||ASML Masktools B.V.||Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques|
|EP1420294A2||Nov 12, 2003||May 19, 2004||ASML Masktools B.V.||Method and apparatus for performing model-based layout conversion for use with dipole illumination|
|JP2001126983A||Title not available|
|JP2001203139A||Title not available|
|JP2001222097A||Title not available|
|JP2001223155A||Title not available|
|JPH09288345A||Title not available|
|WO1998040791A1||Feb 27, 1998||Sep 17, 1998||Koninklijke Philips Electronics N.V.||Positioning device having two object holders|
|WO2001063653A1||Feb 25, 2000||Aug 30, 2001||Hitachi, Ltd.||Semiconductor integrated circuit device and method of producing the same, and method of producing masks|
|1||Eurlings et al., "0.11 .mu.m imaging in KrF lithography using dipole illumination", Proceedings of SPIE, vol. 4404 (2001) pp. 266-278.|
|2||Finders et al., "Can DUV take us below 100 nm?" Proceedings of SPIE, vol. 4346, (2000), pp. 153-165.|
|3||Hsu et al., "65 nm Full-Chip Implementation Using Double Dipole Lithography", Proceedings of SPIE, Bellingham, VA, vol. 5040, No. 1, Feb. 25, 2003, pp. 215-231, XP 009024366.|
|4||Hsu et al., "Dipole decomposition mask design for full-chip implementation at 100nm technology node and beyond", Proceedings of the SPIE, Bellingham, VA, vol. 4691, Mar. 5, 2002, pp. 476-490, XP 002261072.|
|5||Jewell et al., "Spatial Frequency Doubling Lithography (SFDL) of Periodic Structures for Integrated Optical Circuit Technology", Journal of Lightwave Technology, vol. 7, No. 9, Sep. 1989.|
|6||Kim et al., "Feasibility Study of Printing Sub 100 nm with ArF Lithography", Proceedings of SPIE, vol. 4346, (2000), pp. 214-221.|
|7||Nam, "Patterning 220nm Pitch DRAM Patterns by Using Double Mask Exposure", Proceedings of SPIE, vol. 4000, (Mar. 2000), pp. 283-292.|
|8||Torres et al., "Model-assisted double dipole decomposition", Proceedings of the SPIE, Bellingham, VA, vol. 4691, Mar. 5, 2002, pp. 407-417, XP 002257323.|
|9||Torres, J.A., et al. Proceedings of the SPIE, (2002) ISSN: 0277-786X.|
|10||Wong, et al., "Mask Topography Effects in Projection Printing of Phase-Shifting Masks", IEEE Transactions on Electron Devices, vol. 41, No. 6, Jun. 1994.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8234603 *||Jul 14, 2010||Jul 31, 2012||International Business Machines Corporation||Method for fast estimation of lithographic binding patterns in an integrated circuit layout|
|US8632930 *||Jun 7, 2011||Jan 21, 2014||Asml Masktools B.V.||Method and apparatus for performing dark field double dipole lithography (DDL)|
|US8806391 *||Jul 31, 2012||Aug 12, 2014||United Microelectronics Corp.||Method of optical proximity correction according to complexity of mask pattern|
|US20110236808 *||Sep 29, 2011||Asml Mask Tools B.V.||Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL)|
|US20120017194 *||Jul 14, 2010||Jan 19, 2012||International Business Machines Corporation||Method for fast estimation of lithographic binding patterns in an integrated circuit layout|
|U.S. Classification||430/5, 716/54, 716/55|
|International Classification||G06F17/50, G03F1/00, G03F1/14|
|Cooperative Classification||G03F7/70466, G03F7/70125, G03F1/36, G03F1/70|
|European Classification||G03F1/14G, G03F7/70J8|
|Apr 25, 2011||AS||Assignment|
Owner name: ASML MASKTOOLS B.V., NETHERLANDS
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|Feb 7, 2014||AS||Assignment|
Owner name: ASML NETHERLANDS B.V., NETHERLANDS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ASML MASKTOOLS B.V.;REEL/FRAME:032170/0425
Effective date: 20131220
|Jan 15, 2015||FPAY||Fee payment|
Year of fee payment: 4