|Publication number||US8092930 B2|
|Application number||US 12/899,040|
|Publication date||Jan 10, 2012|
|Priority date||Nov 29, 2007|
|Also published as||US7829208, US20090142621, US20110020670|
|Publication number||12899040, 899040, US 8092930 B2, US 8092930B2, US-B2-8092930, US8092930 B2, US8092930B2|
|Inventors||Yingguo Peng, Bin Lu|
|Original Assignee||Seagate Technology Llc|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (14), Non-Patent Citations (1), Classifications (13), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present application is a continuation of and claims priority of U.S. patent application Ser. No. 11/947,288, filed Nov. 29, 2007, the content of which is hereby incorporated by reference in its entirety.
This invention relates to recording mediums and in particular to a CrN film layer.
There are many different forms of mass data storage technology used in modern computing. One of the prevailing forms of data recording is magnetic data recording due to its large capacity and re-usable recording media. Magnetic data recording may be implemented utilizing different types of magnetic recording media, including tapes, hard disks, floppy disks, etc. There is an ever increasing need for magnetic recording media with higher storage capacity, lower noise, and lower costs.
The structure of a typical thinfilm magnetic recording disk is multilayered and includes a substrate at its base covered by one or more layers of thinfilm followed by a magnetic layer and optionally another layer on top of the magnetic layer. The magnetic layer may be coated with an overcoat and/or an organic lubricant. The magnetic layer is the main body on which the magnetic bits are recorded.
Magnetic recording media can be longitudinal magnetic recording media or, more recently, perpendicular magnetic recording media. Perpendicular recording media have many advantages over longitudinal recording media and are currently the more preferred magnetic recording media.
The composition of a magnetic layer can vary but can include such compounds as FePt or CoPt as described, for example, in US Patent Appln. Publication US2004/0191578 to Chen et al. The quality of the magnetic layer is in part determined by the layer or layers between the substrate and the magnetic layer. Important magnetic properties, for example, coercivity which are crucial to the recording performance of a disk can depend primarily on the microstructure of the various thinfilm layers.
A seedlayer disposed between a substrate and an underlayer is described in Lee et al. in U.S. Pat. No. 5,800,931. The seedlayer described in Lee et al. is a MgO sputter deposited thinfilm. An underlayer having chromium, a chromium alloy or a material having a B2 ordered crystalline structure is then placed on the seedlayer prior to forming the magnetic layer. Formation of a seedlayer using MgO can lead to slow process times in production. High quality crystals of MgO, which are crucial for an optimal magnetic recording medium, are difficult to obtain and can also lengthen the processing time in production.
In a recording medium, a CrN film layer comprising a B1 phase crystal structure.
The magnetic recording media described herein have a multilayer structure and generally include a substrate, an underlayer formed on the substrate and a magnetic layer. By underlayer is meant a layer between the magnetic layer and the substrate. The underlayer includes chromium sputtered onto a substrate. Preferably the chromium sputtering is conducted in the presence of nitrogen or nitrogen containing compounds such that a film of CrN is formed over the substrate. The CrN film may also be sputter deposited from a CrN target with or without the presence of nitrogen. A magnetic layer may be deposited directly on the CrN underlayer.
In alternative embodiments, a seedlayer may also be included in the magnetic recording medium. A seedlayer, as referred to herein, is a thin layer and can be formed between the substrate and the underlayer and/or between the underlayer and the magnetic layer.
One embodiment, illustrated by
A variety of substrates can be used in the magnetic recording media describe herein. The substrate is generally formed of a nonmagnetic material. Suitable materials for the substrate can include, for example, high temperature glass, Si, ceramic glass, amorphous glass, NiP plated AlMg, sapphire, quartz, canasite, and SiC. Other suitable materials for substrates are known to those skilled in the art and are all within the scope of the description herein.
The underlayers of the magnetic recording media described herein are fabricated by reactively sputtering chromium in the presence of nitrogen or nitrogen containing compounds to form a CrN film. Sputtering is used in the formation of thin films in construction of magnetic recording media and is a well known technique in the art. Preferably, the chromium sputtering is performed in a N2 atmosphere. The CrN film may also be fabricated by reactively sputtering chromium in a NH3 atmosphere. The CrN film may be sputter deposited in other Nitrogen containing atmospheres. The CrN film may also be sputter deposited from a CrN target with or without the presence of nitrogen.
The crystal structure and the texture of the underlayer are generally important parameters for the optimal functioning of the magnetic recording media. A variety of crystal structures and textures of the underlayer may be amenable in the magnetic recording media described herein. The crystal structure of the CrN film of the underlayer is, preferably, a B1 phase structure.
The underlayer formed by chromium sputtering, preferably, attains a perpendicular (200) texture during the growth of the CrN thin film. This texture is preferable for a magnetic layer with an L10 phase crystal structure. The CrN film, preferably has a distribution angle of less than about 6°. More preferably, the CrN film has a distribution angle of about 4.5°. The thickness of the CrN film in the recording media described herein can be between about 1 nm and about 50 nm. Preferably, the thickness of the CrN film is between about 10 nm and about 20 nm.
The CrN film underlayer shows thermal resistance. Thermal resistance can be measured, for example, by DELCOM 717 conductance Monitor obtained from Delcom Instruments, Inc. Prescott, Wis. The CrN film underlayer can act as an insulator. In heat assisted magnetic recording (HAMR), thermal resistor layer is an important component of the medium structure. The CrN film can be used as the thermal resistor of HAMR media. Preferably, the CrN film acts as an insulator and the conductivity measured by the above mentioned instrument is zero.
The magnetic layer of the recording media can include a variety of components. The magnetic recording media may be longitudinal or perpendicular. In preferred embodiments, the magnetic recording media is perpendicular.
The magnetic layer described herein, preferably contains a L10 phase crystal structure.
An overcoat layer may be provided over the magnetic layer as shown in
The recording media described herein may optionally include a seedlayer. The presence of the seedlayer is not necessary but in some embodiments may enhance the functioning of the recording media. As shown in
In other embodiments, as shown, for example, in
A method for producing magnetic recording media is also contemplated in this description. The method for producing magnetic recording media includes sputter depositing chromium in the presence of nitrogen or nitrogen containing compounds onto a substrate to form a CrN film underlayer. The method further includes forming a magnetic layer, preferably a L10 phase magnetic layer, over the CrN underlayer. An overcoat layer may be formed over the magnetic layer.
In some embodiments, the method may include forming a seedlayer between the substrate and the CrN film. The seedlayer is preferably formed by sputter depositing MgO onto the substrate prior to forming the underlayer. In other embodiments, the method may include forming a seedlayer between the CrN film and the magnetic layer. The seedlayer is preferably formed by sputter depositing a MgO layer on top of the CrN film prior to forming the magnetic layer.
In other alternative embodiments, the method may include forming two seedlayers. The seedlayer can be formed between the substrate and the underlayer and between the underlayer and the magnetic layer. Both of the seedlayers may be sputter deposited MgO films. Alternatively, one of the seedlayers can be another compatible thin film.
A high temperature glass and Si substrate was used to produce a magnetic recording medium. A CrN film was fabricated onto the substrate by reactively sputtering Cr in a N2 atmosphere. The sputtering was conducted in a Cirulus M-12 sputtering chamber manufactured by Oerlikon, Liechtenstein. A sputtering production assembly line includes a series of chambers through which the substrate passes unidirectionally with controlled parameters. Sputtering was performed at room temperature at a pressure of about 5 mTorr with pure nitrogen gas. A FePt L10 phase magnetic layer was grown over the CrN film. An overcoat was placed over the magnetic layer.
It is to be understood that even though numerous characteristics and advantages of various aspects have been set forth in the foregoing description, together with details of the structure and function of various aspects, this is illustrative only, and changes may be made in detail, especially in matters of structure and arrangement of parts to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
|Cited Patent||Filing date||Publication date||Applicant||Title|
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|US20040191578||Mar 24, 2003||Sep 30, 2004||Jingsheng Chen||Method of fabricating L10 ordered fePt or FePtX thin film with (001) orientation|
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|US20070009766||Jul 5, 2005||Jan 11, 2007||Seagate Technology Llc||Tilted magnetic recording media|
|1||*||English machine translation of JP 2001-189010, Meada et al., Jul. 2001.|
|Cooperative Classification||C23C14/0641, C23C14/0036, G11B5/7325, G11B5/8404, G11B5/732, G11B5/82|
|European Classification||G11B5/73N3, G11B5/73N2, C23C14/00F2, C23C14/06F, G11B5/84B|
|Mar 24, 2011||AS||Assignment|
Owner name: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT,
Free format text: SECURITY AGREEMENT;ASSIGNOR:SEAGATE TECHNOLOGY LLC;REEL/FRAME:026010/0350
Effective date: 20110118
|Oct 15, 2012||AS||Assignment|
Owner name: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT,
Free format text: SECURITY AGREEMENT;ASSIGNORS:SEAGATE TECHNOLOGY LLC;EVAULT, INC. (F/K/A I365 INC.);SEAGATE TECHNOLOGY US HOLDINGS, INC.;REEL/FRAME:029127/0527
Effective date: 20120718
Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATE
Free format text: SECOND LIEN PATENT SECURITY AGREEMENT;ASSIGNORS:SEAGATE TECHNOLOGY LLC;EVAULT, INC. (F/K/A I365 INC.);SEAGATE TECHNOLOGY US HOLDINGS, INC.;REEL/FRAME:029253/0585
Effective date: 20120718
|Jun 24, 2015||FPAY||Fee payment|
Year of fee payment: 4