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Publication numberUS8116046 B2
Publication typeGrant
Application numberUS 10/526,278
PCT numberPCT/DE2003/003274
Publication dateFeb 14, 2012
Filing dateOct 1, 2003
Priority dateOct 2, 2002
Also published asDE10246098A1, DE50310912D1, EP1559200A2, EP1559200B1, US20050237684, WO2004032350A2, WO2004032350A3, WO2004032350A8
Publication number10526278, 526278, PCT/2003/3274, PCT/DE/2003/003274, PCT/DE/2003/03274, PCT/DE/3/003274, PCT/DE/3/03274, PCT/DE2003/003274, PCT/DE2003/03274, PCT/DE2003003274, PCT/DE200303274, PCT/DE3/003274, PCT/DE3/03274, PCT/DE3003274, PCT/DE303274, US 8116046 B2, US 8116046B2, US-B2-8116046, US8116046 B2, US8116046B2
InventorsChristian Block, Holger Flühr, Andreas Przadka, Heinz Ragossnig
Original AssigneeEpcos Ag
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Circuit arrangement that includes a device to protect against electrostatic discharge
US 8116046 B2
Abstract
Circuitry includes a terminal for a high-frequency signal, at least two signal lines, a switching unit for connecting the terminal to a signal line, and a primary protection device for protecting against electrostatic discharges. The primary protection device is between the terminal and the switching unit. The primary protection device includes a first element that diverts voltages having a pulse height greater than 200V relative to a reference potential.
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Claims(23)
What is claimed is:
1. Circuitry for use in a mobile telephone, the circuitry comprising:
a terminal for use with a high-frequency signal;
at least two signal lines;
a switching unit for connecting the terminal to a signal line; and
a primary protection device for protecting against electrostatic discharges, the primary protection device being between the terminal and the switching unit, the primary protection device comprising a first element that diverts all voltages having a magnitude greater than 200V along a same path to a reference potential.
2. The circuitry of claim 1, wherein the first element has an insertion attenuation that is less than 0.3 dB.
3. The circuitry of claim 1, wherein the first element has a capacitance that is less than 1 pF.
4. The circuitry of claim 1, wherein the first element comprises a gallium arsenide double diode.
5. The circuitry claim 1, wherein the primary protection device comprises a circuit path that connects the terminal and the switching unit; and
wherein the first element connects the circuit path to the reference potential.
6. The circuitry of claim 1, further comprising:
a second element that is in parallel with the first element, the second element for limiting a current load of the first element.
7. The circuitry of claim 6, further comprising:
a capacitor on a circuit path between the first element and the second element.
8. The circuitry of claim 6, wherein the second element comprises is a discharger.
9. The circuitry of claim 6, wherein the second element comprises a polymer suppressor.
10. The circuitry of claim 6, wherein the second element comprises an over-voltage component having a capacitance that is less than 1 pF.
11. The circuitry of claim 6, wherein the second element comprises an inductive element having an inductance that is greater than 18 nH.
12. The circuitry of claim 1, further comprising:
circuit paths that provide control signals to the switching unit, each of the circuit paths comprising a secondary protection device for protecting against electrostatic discharges.
13. The circuitry of claim 1, further comprising:
a circuit path for supplying for an operating voltage to the switching unit, the circuit path comprising a secondary protection device for protecting against electrostatic discharges.
14. The circuitry of claim 1, wherein the switching unit comprises field effect transistors, a contact break distance of each of the field effect transistors connecting the terminal to a signal line; and
wherein the circuitry further comprises:
circuit paths that connect to gates of the field effect transistors, the circuit paths for providing control signals to the gates, each of the circuit paths comprising a secondary protection device for protecting against electrostatic discharges.
15. The circuitry of claim 12, 13 or 14, wherein the secondary protection device comprises a voltage-limiting element having a switching voltage that is less than 100 V.
16. The circuitry of claim 15, wherein the voltage-limiting element comprises a varistor.
17. The circuitry of claim 15, wherein the voltage-limiting element comprises a Zener diode.
18. The circuitry of claim 14, wherein at least one secondary protection device is connected to the reference potential.
19. The circuitry of claim 1, wherein the switching unit comprises PIN diodes.
20. The circuitry of claim 1, wherein the switching unit comprises a gallium arsenide switch.
21. The circuitry of claim 1, wherein the terminal comprises an antenna input of a mobile telephone.
22. The circuitry of claim 1, wherein the signal lines comprises transmitting and receiving paths of the mobile telephone.
23. The circuitry of claim 1, wherein the switching unit and the primary protection device are integrated into a multi-layer ceramic substrate.
Description
TECHNICAL FIELD

This patent application relates to a circuit arrangement having a switching unit, which is connected to a terminal for a high-frequency signal. Moreover, the switching unit is connected to additional signal leads. The terminal of the circuit arrangement is connected to a protection device against electrostatic discharges.

BACKGROUND

Circuit arrangements are often used as multiband frontend modules for mobile telephones. For example, they are connected to the antenna of the mobile telephone at the antenna input. If a user carrying an electrical charge contacts the antenna, this may result in an electrostatic discharge (ESD). Such electrostatic discharges may produce voltage spikes capable of destroying the circuit arrangement. Consequently, it is necessary to equip circuit arrangements of the type mentioned above with a protection device against ESD.

In high-frequency sections of mobile telephones, among other things, components are used that are sensitive to electrostatic discharges. Such components are, for example, surface acoustic wave filters, gallium arsenide switches, PIN diodes, amplifiers or the like. They may be irreversibly destroyed by the action of high-frequency high voltage pulses such as those produced by ESD. These problems are just as relevant to discrete gallium arsenide switches and frontend modules with integrated gallium arsenide switches as they are to frontend modules with pin switching technology and integrated surface wave filters. These problems also concern the ESD-sensitive components that are used in the transmission/reception paths of the high-frequency section. This complicates use in mobile telephones, as a result of which electrostatic discharges directly to the antenna input of the gallium arsenide switch or frontend module are possible in external, accessible antennas, for external antennas on a car. Many manufacturers of mobile telephones therefore require that the frontend modules or gallium arsenide switches have ESD resistance in compliance with standard IEC61000-4-2 in the magnitude of 8 kV at the system level.

Circuit arrangements that are equipped with a protection device against ESD are known from the publication WO 00/57515. The protection device is designed as an electric high pass filter, to which a capacitor is connected in series with the antenna input path and an inductance is connected in parallel.

The high pass filter to protect the circuit arrangement has the disadvantage that the function of the protective element is frequency-dependent. All frequency components of a signal are passed through nearly unhindered from a specific limit frequency. All other frequency components are suppressed. The result of this frequency-dependent operating mode is that very many frequencies that are not desired in a mobile telephone are still allowed through. For example, frequencies between approximately 1 and 2 GHz are used in mobile telephones according to the GSM, PCN or PCS standard. All other frequencies received by the antenna are likely to be interfering and must therefore be filtered out.

SUMMARY

Described herein is a circuit arrangement in which the protective device against electrostatic discharges is enhanced.

A circuit arrangement is described which has a terminal for a high-frequency signal. Furthermore, the circuit arrangement has at least two additional signal leads. In addition, a switching unit is provided which is used to connect the terminal to one of the signal leads. Furthermore, a primary protection device is provided which is connected between the terminal and the switching unit. The protection device includes a voltage limitation element which diverts voltage pulses exceeding a switching voltage to a reference potential.

The circuit arrangement has the advantage that the diversion of the interfering signals caused by ESD is no longer frequency-dependent. Instead, the interfering signals are detected based on their voltage elevation and diverted to the reference potential. To that end, it is advantageous to use a voltage limitation element having a very low resistance above a switching voltage. Below the switching voltage, the voltage limitation element has a very high resistance so that signals below the switching voltage pass unhindered from the terminal to the switching unit and can be connected to a signal lead from there. On the other hand, voltage pulses whose voltage elevation is greater than the switching voltage are detected reliably and diverted to the reference potential.

It is thus possible to advantageously prevent voltage pulses that are not in the useful range of the circuit arrangement and have a very high, interfering voltage elevation from reaching the switching unit unhindered.

A suitable selection of the switching voltage can make it possible to divert to the reference potential only those signals that are greater than those of the circuit arrangement, for example, signals used to transfer information. This makes it possible top reliably block interfering signals whose voltage elevation exceeds the carrying capacitance or the maximum intended load of the circuit arrangement on reaching the switching unit.

The reference potential may be a ground potential, for example. However, it should be noted that in the case of mobile telephones, for example, there is no ground in the classical sense, but instead only a local ground, which essentially plays the role of a reference potential but may not be considered an infinitely good diversion for charge carriers.

In one embodiment of the circuit arrangement, a protection device is provided whose insertion loss is less than 0.3 dB. Such a protection device has the advantage that processing of the useful signals in the circuit arrangement is hardly interfered with, so that, for example, when the mobile telephone is used, it is possible to dispense with the use of unnecessarily powerful amplifiers, which can improve both the standby operating time and the transmission quality of the information.

In one embodiment of the circuit arrangement, the voltage limitation element has a capacitance lower than 1 pF. This can make the parasitic capacitance of the voltage limitation element low enough to prevent an interference of the useful signals or the useful signals from being too strongly attenuated.

For example, a gallium arsenide double diode is suitable as a voltage limitation element.

Such a double diode may be integrated in the circuitry of the circuit arrangement in such a way that the primary protection device contains a lead that connects the terminal to the switching unit. The lead is connected to the reference potential via the voltage limitation element. This results in the voltage limitation element being connected virtually in parallel to the signal lead.

In another embodiment of the circuit arrangement, a second protective element is connected in parallel to the first voltage limitation element. In this case, it is advantageous if a capacitor is also connected to the lead in series between the protective elements.

The second protective element may be, for example, a spark gap. The use of a spark gap is in particular advantageous because it can be easily integrated in a ceramic multilayer substrate, making it possible to improve the integration level of the circuit arrangement advantageously. The spark gap is in particular suitable if the switching unit contains pin diodes.

Combining the first voltage limitation element with a second protective element makes it possible to subdivide the protective effect of the protection device into a coarse protection and a fine protection. If a gallium arsenide double diode is used for the first voltage limitation element, this may be considered a fine protection for the circuit arrangement. Accordingly, the second protective element may assume the function of the coarse protection. In this connection, the term coarse protection refers to currents of up to 30 A being capable of flowing through the relevant protective element. Accordingly, lower currents should flow through the voltage limitation element that represents the fine protection.

In another embodiment of the circuit arrangement, the second protective element may be a polymer suppressor. In this polymer suppressor, an additional electrically conductive polymer is embedded in a spark gap, the polymer changing its electrical conductivity with the applied voltage.

In another embodiment of the circuit arrangement, the second protective element may be an overvoltage component whose parasitic capacitance does not exceed 1 pF. Such a limit for the capacitance is advantageous because it simultaneously limits the maximum insertion loss for the second protective element.

A varistor may be considered, for example, as an overvoltage component.

In another embodiment of the circuit arrangement, an inductive element is provided as the second protective element. It is advantageous if the inductive element is greater than 18 nH. In this case, the second protective element has an adequately low insertion loss.

In addition to the gallium arsenide double diode, any other overvoltage component whose parasitic capacitance is lower than 1 pF and has a switching voltage lower than 200 V is suitable for the first voltage limitation element. Advantageously, a first voltage limitation element with a switching voltage lower than 100 V is used. The lower the switching voltage of the first voltage limitation element, the more effectively can sensitive components of the circuit arrangement be protected against excessively high voltage pulses. However, it must be considered that the useful signals that are used by the circuit arrangement, for example, to transfer information or speech must also have a specific minimum signal elevation, which may, of course, not be included the switching voltage of the first voltage limitation element in order to prevent the transmission of the signals or speech from being deteriorated by the second protective element.

Furthermore, an overvoltage component whose insertion loss is lower than 0.3 dB may be considered as a first voltage limitation element.

In another embodiment of the circuit arrangement, one or a plurality of control leads is provided to control the switch position of the switching unit. Each control lead is advantageously, but not necessarily, connected to a secondary protection device against high voltages.

This embodiment of the circuit arrangement has the advantage that it is also possible to effectively suppress interference from the control leads. In addition to the interference pulse entering the circuit arrangement directly via the terminal, an electrostatic discharge may also generate a high voltage at the circuit arrangement via a ground coupling or via a coupling through the common reference potential. This may result, for example, from the control input ordinarily used in a switch being either at a high potential or at a low potential. The high potential is defined in that it is, for example, 2.3 V higher than the ground potential of the circuit arrangement. Because, in a mobile telephone, just as in many other devices based on signal transmission using antennas, the signal insertion passes from the antenna to the system ground, in the case of a circuit arrangement mentioned above, it is also possible to cause an electrostatic discharge directly to the ground potential of the circuit arrangement. Via the direct coupling of a control lead to ground via the condition “high,” the voltage pulse arising from an electrostatic discharge may also act on the circuit arrangement via the control lead in addition to the path via the antenna.

In one embodiment of the circuit arrangement, a supply lead is provided for an operating voltage. The supply lead is advantageously, but not necessarily, connected to a secondary protection device against electrostatic discharges. That which has already been described above concerning the control leads also applies to possible interference potentials at the supply lead.

In an embodiment of the circuit arrangement, two field effect transistors are provided in the switching unit. Each break distance of each field effect transistor connects the terminal to a signal lead. Each gate of each field effect transistor is connected to a control lead. Furthermore, each gate is connected to a secondary protection device against electrostatic discharges.

Each of the cited secondary protection devices may include a voltage limitation element having a switching voltage lower than 100 V. A varistor or also a Zener diode, for example, may be considered for this purpose.

In order to facilitate the diversion of interference impulses to the common reference potential, the particular voltage limitation elements of the secondary protection devices are connected to the reference potential.

A circuit arrangement in which the terminal is the antenna input of a mobile telephone is cited as a special embodiment of the circuit arrangement. The use of the circuit arrangement in a mobile telephone is suggested in particular in this case.

To this end, it is also advantageous if the signal leads form the transmission/reception paths of a mobile telephone.

It is furthermore advantageous if the switching unit includes a gallium arsenide switch. Such gallium arsenide switches are in particular favorable with regard to power consumption, as well as being very fast.

In another embodiment of the circuit arrangement, the switching unit and the primary protection device as well as the secondary protection device, if necessary, may be integrated in a multilayer ceramic substrate. This can increase the integration level of the circuit arrangement very effectively, which is of advantage in mobile applications in mobile radio telephony in particular.

The various embodiments are explained in greater detail with reference to associated figures.

DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an example of a circuit arrangement in a schematic representation.

FIG. 2 shows an exemplary embodiment of the primary protection device in a schematic representation.

FIG. 2 a shows another exemplary embodiment of the primary protection device in a schematic representation.

FIG. 3 shows another example of the circuit arrangement in a schematic representation.

FIG. 4 shows another example of the circuit arrangement in a schematic representation.

In the figures, it should be noted that elements that are similar to one another or perform the same function are denoted by identical reference symbols.

DETAILED DESCRIPTION

FIG. 1 shows a circuit arrangement having a terminal 1, which is suitable as an input or output for a high-frequency signal. In addition, a switching unit 3 is provided, which optionally connects terminal 1 to one of signal leads 21 a, 21 b, 21 c, 22 a, 22 b.

A primary protection device 41 connected to reference potential 7 is provided between terminal 1 and switching unit 3. Control leads 91, 92, 93 are provided for the control of switching unit 3. Control voltages VC1, VC2, VC3 are applied to control leads 91, 92, 93. Each of control leads 91, 92, 93 is connected to a secondary protection device 42. Each of protection devices 42 is connected to reference potential 7. Secondary protection devices 42 are formed by voltage limitation elements 53 a, 53 b, 53 c. These may be, for example, varistors or Zener diodes. The use of a multilayer varistor having a switching voltage lower than 100 V is considered in particular. Furthermore, a supply lead 100 is provided which supplies operating voltage VCC to switching unit 3 and is also provided with a secondary protection device 42 in the form of a voltage limitation element 54. Secondary protection devices 42 are needed in particular when switching unit 3 contains a gallium arsenide switch. In the event that switching unit 3 contains 3 PIN diodes, secondary protection devices 42 may be dispensed with. Signal leads 21 a, 21 b, 21 c may, for example, be assigned to the Rx paths for the reception of signals of a mobile telephone. Accordingly, signal lines 22 a, 22 b in the Tx path may be assigned for sending radio telephony signals of a mobile telephone.

Switching unit 3 may also be a ceramic multilayer component containing a gallium arsenide switch and, in addition, passive components for implementing frequency filters.

External terminal 1 may be used as a high-frequency signal input or as a high-frequency signal output. Particular consideration is given to conducting the GSM signals typically used in mobile telephones into switching unit 3 via external terminal 1 or to send them from switching unit 3 to the outside via terminal 1.

FIG. 2 shows a detailed representation of primary protection device 41 of FIG. 1. It is indicated here, for example, how primary protection device 41 may be designed. In the example of FIG. 2, primary protection device 41 has a lead 6. Lead 6 connects terminal 1 to switching unit 3. Lead 6 is connected to a voltage limitation element 51. In the example of FIG. 2, it is a gallium arsenide double diode and is designed as an nppn diode. Such a diode has the advantage that it can be manufacture to have a switching voltage lower than 100 V. Furthermore, it is possible to manufacture such double diodes to have an insertion loss less than 0.1 dB. Furthermore, it is possible to manufacture double diodes of this type to have a parasitic capacitance less than 0.1 pF. Since, according to FIG. 2, voltage limitation element 51 is in a parallel circuit to lead 6, the total capacitance of voltage limitation element 51 contributes to the parasitic capacitance. Voltage limitation element 51 is connected to reference potential 7. Furthermore, it is also conceivable to use a pnnp double diode instead of the nppn double diode.

In particular, a gallium arsenide double diode having a switching voltage between 30 and 100 V is used as voltage limitation element 41.

According to FIG. 2A, another embodiment is shown for primary protection device 41. In addition to voltage limitation element 51, another protective element 52 is provided. It is now not necessary for protective element 52 to be a component having a very low resistance above a switching voltage and a very high resistance below the switching voltage. The protective element can also perform its protective function as a current limitation. The protective function of component 52 is based on the fact that it connects lead 6 to reference potential 7, as a result of which a finite flow of current is connected between terminal 1 and reference potential 7 in any case. Consequently, it may also be assumed here that protective element 52 limits the current load of voltage limitation element 51. Protective element 52 may be, for example, a spark gap; see also FIG. 4 in this regard. However, it may also be a polymer suppressor. Furthermore, a coil is taken into consideration, the inductance of which is greater than 18 nH. In these cases, it is advantageous, in addition to the two protective elements 51, 52, also to connect a capacitor 8 between the two protective elements 51, 52 in series to lead 6.

This results in an LC component that is formed from the coil and capacitor 8. By an adequate selection of the capacitance, which should be greater than 22 pF and is 47 pF in one exemplary embodiment of the circuit arrangement, it is possible for the LC component to have an insertion loss less than 0.1 dB, which is in the frequency range of interest today for mobile radiotelephony. In the embodiment shown in FIG. 2A, protective element 52 has an inductance of 56 nH in the form of an inductor (see also FIG. 3). In one embodiment of the circuit arrangement according to FIG. 2, in conjunction with FIG. 1, it is possible to specify a circuit arrangement that is RF-compatible for frequencies between 0 and 2 GHz and which simultaneously, according to Standard IEC61000-4-2, can effectively suppress ESD pulses up to 8 kV to below the error threshold of the components shown otherwise in the figures.

Voltage limitation elements 53 a, 53 b, 53 c, 54 should have a switching voltage lower than 100 V. They may have a switching voltage that is lower than 10 V. The switching voltages may be selected here to be lower than in terminal 1 because the voltages occurring here normally do not significantly exceed the customary operating voltages of 5 V. In contrast, voltages of up to 30 V can occur at terminal 1 when a mobile telephone is operated.

FIG. 3 shows another embodiment for a circuit arrangement in which a protective element 52, which is a coil, is provided for primary protection device 41. This makes it simple to implement the inductance already discussed in FIG. 2A.

Furthermore, FIG. 3 shows the internal structure of an exemplary switching unit 3. Two field effect transistors 111, 112 are provided. Each field effect transistor 111, 112 has a break distance 121, 122, which can be switched through or also blocked via the corresponding gate 131, 132. Break distance 121, 122 connects terminal 1 to a signal lead 21 a, 22 a. Each gate 131, 132 is connected to a control voltage VC1, VC2. Furthermore, each gate 131, 132 is connected to a secondary protection device 42, which, in the example of FIG. 3, is a varistor as the voltage limitation element. Each of the varistors is for its part connected to reference potential 7. It may also be seen from FIG. 3 that instead of the nppn double diode of FIG. 2 and FIG. 2A, the use of a pnnp double diode in primary protection device 41 is also considered.

Field effect transistors 111, 112 that are shown in FIG. 3 may also be, for example, a gallium arsenide switch. Accordingly, it is advantageous if field effect transistors 111, 112 are designed based on gallium arsenide.

Furthermore, the exemplary switching unit may also contain more than two field effect transistors. In this case, each gate of each transistor must be connected to a secondary protection device.

With a maximum signal voltage of approximately 30 V generated in the mobile telephone when double diodes are used, the characteristics of the diode itself make a switching voltage of approximately 30 to 60 V necessary.

FIG. 4 shows another embodiment of the circuit arrangement in which a spark gap is selected for protective element 52. Also, when a spark gap is used, it is advantageous in addition to provide a capacitor 8, which is connected to line 6 according to FIG. 2A and FIG. 3. The use of a spark gap as protective element 52 is advantageous in particular when PIN diodes are provided in switching unit 3 to switch the signals from terminal 1 to signal leads 21 a, 21 b, 21 c, 22 a, 22 b.

The described circuitry is not limited to mobile telephones; instead, it may be used in any circuit arrangement in which high-frequency signals occur and in which a protection against electrostatic discharges is necessary.

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US3587017Nov 27, 1967Jun 22, 1971Fujitsu LtdOvervoltage protecting arrangement for an rf amplifier
US3728731Jul 2, 1971Apr 17, 1973Motorola IncMulti-function antenna coupler
US3934175Oct 17, 1974Jan 20, 1976General Semiconductor Industries, Inc.Power surge protection system
US3968411 *Mar 27, 1975Jul 6, 1976The United States Of America As Represented By The Secretary Of The ArmyTransmitter-receiver protection device
US4007355Mar 21, 1975Feb 8, 1977Societe Anonyme Dite: Societe Internationale Pour L'innovationData-transfer system
US4303911Jul 30, 1979Dec 1, 1981Hulick Timothy PRemote control digitally encoded electronic switch
US4399557Dec 15, 1981Aug 16, 1983Motorola Inc.Minimum power, feedback controller, transmit/receive switch
US4410902Mar 23, 1981Oct 18, 1983The United States Of America As Represented By The Secretary Of The ArmyPlanar doped barrier semiconductor device
US4525863Oct 19, 1983Jun 25, 1985Gte Laboratories IncorporatedSolid state transmit/receive switch
US4573168Aug 31, 1984Feb 25, 1986Sperry CorporationBalanced bidirectional or party line transceiver accommodating common-mode offset voltage
US4695283Jun 27, 1985Sep 22, 1987Aldinger GuentherEndoprosthesis
US4709233May 27, 1983Nov 24, 1987Duval David RSingle line pair power control system with multi-station capability
US4739436Dec 15, 1986Apr 19, 1988General Electric CompanySurge suppression circuit
US4758805Oct 24, 1984Jul 19, 1988Nippondenso Co., Ltd.High frequency interference prevention filter for electric instruments
US4759051Mar 16, 1987Jul 19, 1988A. A. Hopeman, IIICommunications system
US4783846Jun 4, 1987Nov 8, 1988General Instrument CorporationSwitchable signal source module for use with cable television converter
US4977357 *Jan 11, 1988Dec 11, 1990Shrier Karen POvervoltage protection device and material
US4999595Jan 23, 1989Mar 12, 1991Murata Manufacturing Co., Ltd.LC filter structure
US5053910Oct 16, 1989Oct 1, 1991Perma Power Electronics, Inc.Surge suppressor for coaxial transmission line
US5122878Jun 20, 1989Jun 16, 1992Telefunken Electronic GmbhTelevision tuner and circuitry for switching between two frequency ranges
US5122921 *Apr 26, 1990Jun 16, 1992Industrial Communication Engineers, Ltd.Device for electromagnetic static and voltage suppression
US5148345Mar 5, 1990Sep 15, 1992Allina Edward FPrepackaged electrical transient surge protection
US5179731Jun 8, 1990Jan 12, 1993Licentia-Patent-Verwaltungs-GmbhFrequency conversion circuit
US5203019Dec 13, 1990Apr 13, 1993Telefunken Electronic GmbhRadio receiver with improved automatic gain control
US5276422 *Sep 9, 1992Jan 4, 1994Mitsubishi Materials CorporationSurge absorber
US5321573Jul 16, 1992Jun 14, 1994Dale Electronics, Inc.Monolythic surge suppressor
US5323332Feb 27, 1992Jun 21, 1994Infotec Development, Inc.Instrument landing system calibrator
US5418345Feb 28, 1994May 23, 1995United Technologies CorporationMethod for forming shaped passages
US5473293Dec 27, 1993Dec 5, 1995Murata Manufacturing Co., Ltd.High-frequency switch
US5488540Jan 18, 1994Jan 30, 1996Nippondenso Co., Ltd.Printed circuit board for reducing noise
US5521561 *Feb 9, 1995May 28, 1996Lk Products OyArrangement for separating transmission and reception
US5523716Oct 13, 1994Jun 4, 1996Hughes Aircraft CompanyMicrowave predistortion linearizer
US5532897May 27, 1994Jul 2, 1996Lightning Eliminators & Consultants, Inc.High-voltage surge eliminator
US5575807Dec 2, 1994Nov 19, 1996Zmd CorporationMedical device power supply with AC disconnect alarm and method of supplying power to a medical device
US5576920 *May 2, 1995Nov 19, 1996Pioneer Electronic CorporationElectrostatic destruction preventing circuit and receiving apparatus having the same
US5583734Nov 10, 1994Dec 10, 1996Raychem CorporationSurge arrester with overvoltage sensitive grounding switch
US5625894Mar 21, 1995Apr 29, 1997Industrial Technology Research InstituteSwitch filter having selectively interconnected filter stages and ports
US5628850Jul 20, 1995May 13, 1997Motorola, Inc.Method for producing input/output connections in a ceramic device
US5630223Dec 7, 1994May 13, 1997American Nucleonics CorporationAdaptive method and apparatus for eliminating interference between radio transceivers
US5675468Nov 1, 1995Oct 7, 1997Chang; Pak ChuenApparatus and method for protecting equipment against electrical power surges
US5689818Dec 21, 1995Nov 18, 1997U.S. Philips CorporationMobile terminal device for telecommunications, including a switch circuit
US5714900Apr 12, 1996Feb 3, 1998Hewlett-Packard CompanyElectrical overstress protection device
US5726844 *Apr 1, 1996Mar 10, 1998Motorola, Inc.Protection circuit and a circuit for a semiconductor-on-insulator device
US5742896Nov 9, 1990Apr 21, 1998Bose CorporationDiversity reception with selector switching at superaudible rate
US5768690Oct 10, 1995Jun 16, 1998Kabushiki Kaisha ToshibaRadio communication device with improved antenna duplexing apparatus
US5783976Aug 24, 1995Jul 21, 1998Murata Manufacturing Co., Ltd.Composite high frequency apparatus and method of forming same
US5815804Apr 17, 1997Sep 29, 1998MotorolaDual-band filter network
US5889308Aug 8, 1997Mar 30, 1999Hyundai Electronics Industries Co., Ltd.Semiconductor device having an electrostatic discharging protection circuit using a non-ohmic material
US5896265 *Jun 2, 1997Apr 20, 1999Act Communications, Inc.Surge suppressor for radio frequency transmission lines
US5903421Oct 21, 1997May 11, 1999Murata Manufacturing Co., Ltd.High-frequency composite part
US5914481Oct 7, 1997Jun 22, 1999Norand CorporationPortable data collection terminal with handwritten input area
US5926075Jul 19, 1996Jul 20, 1999Tdk CorporationAntenna switch
US5982253Aug 27, 1997Nov 9, 1999Nartron CorporationIn-line module for attenuating electrical noise with male and female blade terminals
US5995387May 27, 1998Nov 30, 1999Murata Manufacturing Co., Ltd.Switching power-supply unit
US6060960Jul 16, 1997May 9, 2000Murata Manufacturing Co., Ltd.Duplexer comprising a SAW filter disposed on a multi-layer substrate
US6072993 *Aug 12, 1997Jun 6, 2000Sony CorporationPortable radio transceiver with diplexer-switch circuit for dual frequency band operation
US6100606Jan 6, 1999Aug 8, 2000Matsushita Electric Works, Ltd.High frequency switching device
US6100776Jan 22, 1999Aug 8, 2000Murata Manufacturing Co., Ltd.High-frequency composite transmission section with switch, LC filter, and notch filter
US6111478Oct 8, 1998Aug 29, 2000Murata Manufacturing Co., Ltd.Filter with a switch having capacitance
US6114848Jan 14, 1999Sep 5, 2000Genrad, Inc.Direct-measurement provision of safe backdrive levels
US6236551Jun 12, 2000May 22, 2001Polyphaser CorporationSurge suppressor device
US6243247Apr 20, 1999Jun 5, 2001Polyphaser CorporationStripline transient protection device
US6272327 *Jun 18, 1998Aug 7, 2001Lucent Technologies Inc.High power wireless telephone with over-voltage protection
US6289204Jul 9, 1998Sep 11, 2001Motorola, Inc.Integration of a receiver front-end in multilayer ceramic integrated circuit technology
US6320547Aug 23, 2000Nov 20, 2001Sarnoff CorporationSwitch structure for antennas formed on multilayer ceramic substrates
US6335641Jan 3, 2000Jan 1, 2002Mitsubishi Electric System Lsi Design CorporationAutomatic input threshold selector
US6337722Aug 4, 1998Jan 8, 2002Lg.Philips Lcd Co., LtdLiquid crystal display panel having electrostatic discharge prevention circuitry
US6385030 *Sep 2, 1999May 7, 2002Marconi Communications, Inc.Reduced signal loss surge protection circuit
US6407614Mar 29, 2001Jun 18, 2002New Japan Radio Co., Ltd.Semiconductor integrated switching circuit
US6445262Sep 28, 2000Sep 3, 2002Murata Manufacturing Co., Ltd.Composite high frequency component and mobile communication apparatus incorporating the same
US6456172Oct 20, 2000Sep 24, 2002Matsushita Electric Industrial Co., Ltd.Multilayered ceramic RF device
US6512427Jan 10, 2000Jan 28, 2003Fujitsu LimitedSpurious signal reduction circuit
US6525346 *Dec 13, 2000Feb 25, 2003Nec CorporationSemiconductor device and its manufacturing method capable of reducing low frequency noise
US6570469Jun 27, 2001May 27, 2003Matsushita Electric Industrial Co., Ltd.Multilayer ceramic device including two ceramic layers with multilayer circuit patterns that can support semiconductor and saw chips
US6590263Mar 18, 2002Jul 8, 2003Infineon Technologies AgESD protection configuration for signal inputs and outputs in semiconductor devices with substrate isolation
US6608547Jul 6, 2000Aug 19, 2003Epcos AgLow capacity multilayer varistor
US6633748Oct 22, 1999Oct 14, 2003Murata Manufacturing Co., Ltd.Composite high frequency component and mobile communication device including the same
US6657827Sep 25, 2000Dec 2, 2003Murata Manufacturing Co., Ltd.Head
US6731184Jun 26, 2000May 4, 2004Murata Manufacturing Co., Ltd.High frequency switching component
US6738248 *Oct 28, 2002May 18, 2004Lsi Logic CorporationESD protection circuit for low amplitude signals
US6738609Aug 17, 2000May 18, 2004Nokia CorporationReceiver and method of receiving
US6745046Feb 1, 2000Jun 1, 2004Siemens AktiengesellschaftIntegrated antenna coupler element
US6759925Oct 5, 2001Jul 6, 2004Matsushita Electric Industrial Co., Ltd.Radio-frequency hybrid switch module
US6768898Mar 6, 2002Jul 27, 2004Murata Manufacturing Co., Ltd.Composite high frequency component and mobile communication apparatus including the same
US6795714Jan 15, 1999Sep 21, 2004Siemens AktiengesellschaftMultiband antenna switcher
US6822295 *Jul 30, 2002Nov 23, 2004Honeywell International Inc.Overvoltage protection device using pin diodes
US6831528Dec 27, 2001Dec 14, 2004Matsushita Electric Industrial Co., Ltd.High-frequency switching module and high-frequency apparatus equipped with the same
US6847803Feb 25, 2000Jan 25, 2005Nokia Mobile Phones Ltd.Method for reducing interference in a receiver
US6856213Oct 5, 2001Feb 15, 2005Matsushita Electric Industrial Co., Ltd.High frequency composite switch module
US6987984Mar 17, 2000Jan 17, 2006Hitachi Metals, Ltd.High-frequency switch module
US7027777Oct 29, 2002Apr 11, 2006Matsushita Electric Industrial Co., Ltd.High frequency switch and high frequency radio communication apparatus
US7027779Aug 22, 2001Apr 11, 2006Hitachi Metals, Ltd.Laminated-type high-frequency switch module
US7057472Aug 12, 2002Jun 6, 2006Hitachi Metals, Ltd.Bypass filter, multi-band antenna switch circuit, and layered module composite part and communication device using them
US7221922Feb 13, 2004May 22, 2007Hitachi Metals, Ltd.Switch circuit and composite high frequency elements
US7343137Sep 27, 2002Mar 11, 2008Epcos AgCircuit, switching module comprising the same, and use of said switching module
US7412210Jun 13, 2006Aug 12, 2008Tdk CorporationHigh frequency module
US7471930Oct 21, 2005Dec 30, 2008Tdk CorporationHigh frequency module
US7492565Sep 27, 2002Feb 17, 2009Epcos AgBandpass filter electrostatic discharge protection device
US8014731Jan 17, 2002Sep 6, 2011Epcos AgElectric circuit module, circuit module arrangement and use of said circuit module and of said circuit module arrangement
US20010004767Dec 18, 2000Jun 21, 2001Diva Systems CorporationSystem for interactively distributing information services
US20010027091Jan 8, 2001Oct 4, 2001Masayuki KimishimaSingle balanced mixer
US20020080537 *Dec 21, 2000Jun 27, 2002Landy Patrick J.Switched electrostatic discharge ring for integrated circuits with multiple power inputs
US20020090974Oct 25, 2001Jul 11, 2002Peter HagnCombined front-end circuit for wireless transmission systems
US20020121668Mar 18, 2002Sep 5, 2002Harald GossnerESD protection configuration for signal inputs and outputs in semiconductor devices with substrate isolation
US20030104780Jan 7, 2003Jun 5, 2003Young Michael FrancisPole mounted bi-directional RF converter amplifier and system
US20030181174Jul 9, 2002Sep 25, 2003Kotaro TakagiRadio signal receiving apparatus and demodulating circuit
US20040032706Nov 1, 2001Feb 19, 2004Shigeru KemmochiHigh-frequency switch module
US20040130388Jan 17, 2002Jul 8, 2004Christian BlockElectric circuit module, circuit module arrangement and use of said circuit module and of said circuit module arrangement
US20040145849Nov 14, 2003Jul 29, 2004Chang Byung-HoSurge protection device and method
US20040246168Feb 12, 2004Dec 9, 2004Osamu IsajiRadar device capable of scanning received reflection waves
US20040257740Sep 27, 2002Dec 23, 2004Christian BlockCircuit arrangement, switching module comprising said circuit arrangement and use of switching module
US20040264095Sep 27, 2002Dec 30, 2004Christian BlockCircuit arrangement, switching module comprising said circuit arrangement and use of said switching module
US20040266378Aug 12, 2002Dec 30, 2004Keisuke FukamachiBypass filter, multi-band antenna switch circuit, and layered module composite part and communication device using them
US20050059358Sep 27, 2002Mar 17, 2005Christian BlockCircuit, switching module comprising the same, and use of said switching module
DE3626800A1 *Aug 8, 1986Feb 11, 1988Siemens AgArrangement for protection against overvoltages
JP2000134945A * Title not available
JPH02162744A * Title not available
WO2000057515A1 *Feb 24, 2000Sep 28, 2000Ericsson Telefon Ab L MHigh-pass filter
Non-Patent Citations
Reference
1Action and Response History retrieved for U.S. Appl. No. 10/466,338, through Aug. 18, 2011.
2Action and Response History retrieved for U.S. Appl. No. 10/466,338, through Dec. 21, 2010.
3Action and Response History retrieved for U.S. Appl. No. 10/466,338, through Feb. 17, 2011.
4Action and Response History retrieved for U.S. Appl. No. 10/466,338, through Jan. 26, 2009.
5Action and Response History retrieved for U.S. Appl. No. 10/490,711, through Jan. 26, 2009.
6Action and Response History retrieved for U.S. Appl. No. 10/490,753, through Apr. 21, 2009.
7Action and Response History retrieved for U.S. Appl. No. 10/490,753, through Dec. 21, 2010.
8Action and Response History retrieved for U.S. Appl. No. 10/490,753, through Feb. 15, 2011.
9Action and Response History retrieved for U.S. Appl. No. 10/490,753, through Jan. 26, 2009.
10Action and Response History retrieved for U.S. Appl. No. 10/490,914, through Jan. 26, 2009.
11Action and Response History retrieved for U.S. Appl. No. 10/490,930, through Jan. 26, 2009.
12Action and Response History retrieved from U.S. Appl. No. 10/490,753, through Jul. 19, 2011.
13Benz et al "Spannungs, Licht-und Magnetfeldabhangige Widerstande" Tabellenbuch Radio-und Fernsehtechnik, Funkelektronik, S. 130, 135, 286 XP-002232831, 1993.
14English Translation of Examination Report in Application No. JP62-098905, dated Apr. 5, 2007.
15English Translation of Examination Report in Application No. JP62-098905, dated May 31, 2007.
16English Translation of Examination Report in Japanese Application No. 2003-533457, dated Jun. 19, 2008.
17English Translation of Int'l Preliminary Examination Report for Application No. PCT/DE2002/00129, dated Feb. 6, 2003.
18English Translation of Int'l Preliminary Examination Report for Application No. PCT/DE2002/003665, dated Sep. 2, 2003.
19English Translation/Summary of German Examination Reports in Application No. 102 01 434, dated Feb. 3, 2003 and Sep. 8, 2006.
20Examination Report in German Application No. DE10201435.3, dated Sep. 1, 2008.
21Examination Report in German Application No. DE10246098.1, dated Oct. 14, 2005.
22Examination Report in Japanese Application No. 2000-558612, dated Feb. 14, 2008.
23German Examination Report in corresponding German Application No. 10201434 dated Mar. 3, 2004.
24Gramegna, G. et al., "A Sub-1-dB NF ±2.3-kV ESD-Protected 900-MHz CMOS LNA", IEEE Journal of Solid-State Circuits, 36(7):1010-1017 (2001).
25International Norm IEC 61000-4-2, Edition 1.2, Apr. 2001.
26Int'l Search Report in Application No. PCT/DE03/03274, dated Apr. 2, 2004.
27Lucero, et al "Design of an LTCC Switch Diplexer Front-End Module for GSM/DCS/PCS Applications", IEEE Radio Frequency Integrated Circuits Symposium, May 20-22, 2000, pp. 213-216.
28Machine Translation of Application No. JP2000-236201.
29Machine Translation of Japanese Publication No. 06-077707 (Pub. Date Mar. 1994).
30Machine Translation of Japanese Publication No. 06-112850 (Pub. Date Apr. 1994).
31Machine Translation of Japanese Publication No. 09-200077 (Pub. Date Jul. 1997).
32Machine Translation of Japanese Publication No. 10-032521 (Pub. Date Feb. 1998).
33Machine Translation of Japanese Publication No. 10-126307 (Pub. Date May 1998).
34Machine Translation of Japanese Publication No. 11-027177 (Pub. Date Jan. 1999).
35Machine Translation of Japanese Publication No. 11-055156 (Pub. Date Feb. 1999).
36Machine Translation of Japanese Publication No. 2000-196495 (Pub. Date Jul. 2000).
37Machine Translation of Japanese Publication No. 2000-196496 (Pub. Date Jul. 2000).
38Machine Translation of Japanese Publication No. 2000-278168 (Pub. Date Oct. 2000).
39Machine Translation of Japanese Publication No. 2001-185902 (Pub. Date Jul. 2001).
40Machine Translation of Japanese Publication No. 2002-064401 (Pub. Date Feb. 2002).
41Machine Translation of Japanese Publication No. 2002-118487 (Pub. Date Apr. 2002).
42Machine Translation of Japanese Publication No. 2002-208873 (Pub. Date Jul. 2002).
43Machine Translation of JP05-299209.
44Machine Translation of JP07-036548.
45Machine Translation of JP09-284168 (Sawai Tetsuo), 13 pgs.
46Machine Translation of JP09-284168.
47Machine Translation of JP10-303314.
48Machine Translation of JP2000-156651 (Katagishi Makoto), 10 pgs.
49Machine Translation of JP2000-228060.
50Machine Translation of JP2001-127663 (Hayakawa), 23 pgs.
51Machine Translation of JP2001-237372.
52Pieters et al., "High-Q Integrated Spiral Inductors for High Performance Wireless Front-End Systems", in IEEE Radio and Wireless Conf., Denver, CO, (2000), pp. 251-254.
53Steyaert, M.S.J. et al., "Low-Voltage Low-Power CMOS-RF Transceiver Design", IEEE Transactions on Microwave Theory and Techniques, 50(1):281-287 (2002).
54TVSF0603 "FemtoFarad",Polymer ESD Suppressor, Microsemi, 2000.
55Updated Action and Response History retrieved for U.S. Appl. No. 10/466,338, through Aug. 17, 2009.
56Updated Action and Response History retrieved for U.S. Appl. No. 10/490,753, through Aug. 17, 2009.
Classifications
U.S. Classification361/56, 361/119
International ClassificationH04B1/48, H02H9/00, H02H9/06, H04B1/18
Cooperative ClassificationH02H9/06, H04B1/18, H04B1/48
European ClassificationH04B1/18, H04B1/48
Legal Events
DateCodeEventDescription
Mar 1, 2005ASAssignment
Owner name: EPCOS AG, GERMANY
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BLOCK, CHRISTIAN;FLUHR, HOLGER;PRZADKA, ANDREAS;AND OTHERS;REEL/FRAME:016859/0433;SIGNING DATES FROM 20050118 TO 20050211
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BLOCK, CHRISTIAN;FLUHR, HOLGER;PRZADKA, ANDREAS;AND OTHERS;SIGNING DATES FROM 20050118 TO 20050211;REEL/FRAME:016859/0433