|Publication number||US8124439 B2|
|Application number||US 12/992,714|
|Publication date||Feb 28, 2012|
|Filing date||May 19, 2009|
|Priority date||May 21, 2008|
|Also published as||EP2279524A1, US20110086461, WO2009141327A1|
|Publication number||12992714, 992714, PCT/2009/56040, PCT/EP/2009/056040, PCT/EP/2009/56040, PCT/EP/9/056040, PCT/EP/9/56040, PCT/EP2009/056040, PCT/EP2009/56040, PCT/EP2009056040, PCT/EP200956040, PCT/EP9/056040, PCT/EP9/56040, PCT/EP9056040, PCT/EP956040, US 8124439 B2, US 8124439B2, US-B2-8124439, US8124439 B2, US8124439B2|
|Original Assignee||Commissariat A L'energie Atomique Et Aux Energies Alternatives|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (27), Non-Patent Citations (1), Referenced by (5), Classifications (36), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The invention relates to a method for making an optical device with integrated optoelectronic components including a structure (“waferlevel packaging”) for protecting the integrated optoelectronic components, for example CMOS (“Complementary Metal Oxide Semiconductor”) or CCD (“Charge Coupled Device”) imagers.
The invention applies to any type of imagers, regardless of the detection wavelength range of these imagers (visible, infrared range, etc.). The optical device made may advantageously be a camera with integrated imagers.
In the field of structures for protecting substrates with integrated imagers, a known mechanical handle system is used when such a substrate has to be thinned to a small thickness and be optionally subject to other technological operations. By small thickness is understood a thickness below which the substrate no longer has sufficient mechanical strength for guaranteeing its handling without any risk of damage, for achieving its automatic loading in equipment and allowing technological operations to be carried out at the scale of the substrate without such a mechanical handle. Such a thickness described as a small thickness may be comprised between about 300 μm and a few micrometers.
When such a mechanical handle is used for a substrate including integrated imagers, this handle is typically made with a glass-based substrate which is transferred onto the substrate including the imagers.
The use of such a mechanical handle however has drawbacks. Indeed, given that the heat expansion coefficient (HEC) of glass, which for example is equal to 3.3 m/m/K for Borofloat glass, is different from that of silicon (typically equal to 2.6 m/m/K), the structure formed by the mechanical handle and the substrate after adhesive bonding has deformation which may be a problem not only for automatic handling of the substrate but also for the quality of the operations which this structure should subsequently undergo. This deformation is all the more a problem since the size of the substrates is large (for example in the case of a 12-inch wafer). Further, in the perspective of adding functions to the glass substrate, it may be advantageous to use glasses with a larger heat expansion coefficient, causing a still larger deformation of the structure. The problem detailed above related to the deformation of the formed structure then becomes very rapidly limiting and blocking.
When such a handle is adhesively bonded to a substrate including imagers, the structure formed by the substrate and the mechanical handle is cut out, after performing various technological operations on the substrate, in order to form independent elements each including one imager, each element then being transferred into a camera module comprising other optical elements.
It is also known how to make a camera module including a structure for protecting a substrate, called an interposer, making an interface between the substrate and optical elements (for example a simple glass plate or an assembly including one or more lenses). Such an interposer is positioned on the substrate including the imagers and with which the optical elements may be positioned at a specific distance relatively to the pixel plane, i.e. the plane from which light detection is performed by the imagers, and a cavity of air or of a controlled atmosphere may be formed above the pixel plane in order to optimize the optical performances of the camera module.
The benefit of such an interposer is to be able to control at the scale of the substrate, the optical element/imager distance and to thereby do without the focusing operation of the camera modules which do not include such interposers, consisting of placing the pixel plane of the imager in the focal plane of the optical element, which is a costly operation.
Document U.S. Pat. No. 7,223,626 B2 describes an interposer forming a matrix comprising a polymerized material including recesses, these recesses being intended to be positioned above the imagers integrated to a substrate. After the interposer is positioned on the substrate including the imagers, a glass substrate is transferred onto the interposer. With this interposer, it is possible to obtain accurate positioning of the glass substrate relatively to the substrate with imagers.
The use of such an interposer notably has the drawback that the mechanical reference for the transfer of optical elements other than the glass substrate intended to be optically coupled with the imagers is the upper face of the glass substrate, i.e. the face opposite to the one in contact with the interposer. Thus, the control of the distance between these other optical elements and the imagers requires control of a rather complex chain of dimensions. Indeed, the control of the position of the mechanical reference relatively to the imagers involves the control of the thickness of the interposer, of the thickness of the glass substrate and of the thicknesses of the different adhesive joints between these elements. This chain of dimensions therefore represents a source of significant potential errors.
Further, the heat expansion coefficients of the constitutive materials of this structure (epoxy, polyimide, etc.) strongly differ from that of silicon (material of the substrate including the imagers). If technological operations of the waferlevel type (CVD, PVD depositions, etc.) are contemplated, the resulting deformation of the adhesive bond of the assembly may then become a problem.
Documents US 2006/035415 A1 and US 2006/043262 A1 describe openworked interposers receiving different optical elements in their apertures. Such interposers are used during the final operations for packaging the imagers since they cannot be used as a mechanical handle. Further, with such interposers, it is not possible to achieve thinning of the substrate while guaranteeing to the thereby formed assembly a handling facility and compatibility with standard methods carried out at the scale of the substrate. The technological operations to be performed on the devices, and more particularly on the substrates with imagers including these interposers, are delicate because of the openworked structuration of the interposers and of the heterogeneity of the face opposite to the image plane which embrittle the devices and complicate the holding of the substrate by suction and possibly the heating of the substrate with imagers during subsequent technological steps. Finally, given that many elements are used for making the device, the chain of dimensions to be controlled is also complex in order to properly position an additional optical element with respect to an imager.
Document U.S. Pat. No. 7,144,745 B2 describes a mixed structure which may be used both as an interposer and a mechanical handle. But there again, this structure has the drawback that the mechanical reference for the transfer of optical elements is the upper face of a glass substrate, involving control of a complex chain of dimensions. Further, the heat expansion coefficient of the materials used differs from that of silicon from which the substrate with imagers is made, involving problematical deformations of the device including this structure.
An object of the present invention is to propose a method for making an optical device not including the drawbacks of the prior art, i.e. resorting to a protective structure fulfilling both the roles of an interposer and of a mechanical handle during technological operations performed on a substrate including integrated optoelectronic components, not posing any heat expansion problems between the protective structure and the substrate including the imagers and not involving any complex chain of dimensions upon possible addition of additional optical elements.
For this, a method for making an optical device with integrated optoelectronic components is proposed, including at least the steps of:
a) making a protective structure comprising at least one support in which is made at least one blind hole, at least one optical element being positioned in the blind hole and firmly attached to at least one wall of the blind hole,
b) firmly attaching the support to a substrate comprising the integrated optoelectronic components, the blind hole forming a cavity in which the optical element faces one of the optoelectronic components,
c) making electric connections through the substrate and/or between the substrate and the support and/or through the support, and/or achieving thinning of the substrate and/or of the support,
d) making at least one aperture through the bottom wall of the blind hole, exposing at least one part of the optical element or uncovering at least one part of the optical field of the optical element.
Step c) may include the achievement of thinning of the substrate and the making of electric connections through the substrate.
In this case, the step c) may further include the making of electric connections between the substrate and the support and/or through the support, and/or the achievement of thinning of the support.
Thus, the protective structure fulfils both the function of an interposer, i.e. it allows the distance between the optical element and the substrate to be controlled, and the function of a mechanical handle, and it does not have the drawbacks of the structures of the prior art (complex chain of dimensions, deformations due to different heat expansion coefficients, difficulties in performing subsequent technological operations).
During the operations performed during step c) of the method, the surface of the structure opposite relatively to the image plane, forming the bottom wall of the blind hole, is not openworked. It is therefore possible to handle the optical device in order to perform various technological operations during step c) (thinning, deposition, lithography, etching, making intraconnections, etc.) by using the protective structure as a mechanical handle.
Further, by making the support of the protective structure from one or several materials for which the heat expansion coefficient is close to that of the material of the substrate, the heat expansion coefficient of the optical element no longer involves any deformation in the optical device given that the latter is not in direct contact with the substrate. It is therefore possible to use in the protective structure, optical elements comprising glass with a larger heat expansion coefficient and/or to contemplate increasing the geometry of the substrates, i.e. use a substrate of larger dimensions.
When, for reasons of optical performances, the distance between the optical element and one of the integrated optoelectronic components has to be small, it is possible to have a mechanical reference, formed by a rear face of the support of the protective structure (this rear face being the face opposite to the one firmly attached to the substrate), which is away from the pixel plane and/or from the optical element since the thickness of the support is independent of the depth of the blind hole made.
The use of such a protective structure excludes the uncertainty on the thickness of the optical element in controlling the distance between the optical element and the substrate. This also applies in the case when other optical elements are subsequently transferred onto the protective structure, given that this structure requires the control of less dimensions than the structures of the prior art which integrate the thickness of the optical element in their chain of dimensions.
Finally, with this method it is possible to make electric connections through the substrate and/or between the substrate and the support and/or through the support without any problems for handling the device by means of the protective structure used as a mechanical handle.
The mechanical handle function may for example be fulfilled by the support and/or the protective structure when the support and/or the protective structure has a thickness greater than or equal to about 300 μm, for example between about 300 μm and 500 μm. It is notably possible that the thickness of the support be equal to or greater than about 300 μm, or comprised between about 300 μm and 500 μm after achieving thinning of the support. The substrate may then also fulfill the function of a mechanical handle during thinning of the support, the thinning of the substrate may in this case be achieved after thinning the support. Before its thinning, the thickness of the substrate may be greater than or equal to about 300 μm, or comprised between about 300 μm and 500 μm.
Several optical elements may be positioned in a single blind hole of the support.
The optical element may be firmly attached to the bottom wall of the blind hole and/or with the walls of the blind hole other than the bottom wall by at least one adhesive bonding interface.
The optical element may comprise glass and/or an organic material (notably for imagers operating in the visible domain) and/or germanium (for infrared detectors for example). The optical element may include at least one plate with parallel faces and/or a lens and/or a lens with an index gradient.
The support may include a substantially planar rear face, opposite to a face intended to be firmly attached to the substrate. Such a planar face is particularly advantageous for performing technological operations during step c) or after step d) of the method, for example in order to make deposits of materials or of optical elements on this rear face.
The integrated optoelectronic components may include CMOS and/or CCD imagers. The invention is particularly suitable for a substrate with integrated CMOS imagers.
The support may comprise a material having a heat expansion coefficient substantially similar to that of the material of the substrate.
Thus, depending on the nature of the material of the support, the latter may have a heat expansion coefficient compatible with that of the substrate, thanks to the fact that the optical function is fulfilled by the optical element and that the mechanical handle function is fulfilled by the support which is distinct from the optical element.
Finally, when the support comprises a material similar to that of the substrate, cutting-out of the assembly formed by the protective structure and the substrate is facilitated since this cutting-out is only achieved in the support, for example comprising a semiconductor, and not in the optical element for example comprising glass, like in the devices of the prior art resorting to a glass substrate for making the optical element.
The support may, during step b) of the method, be firmly attached to the substrate via spacer elements.
Moreover, the thickness of the optical element and the depth of the hole may be selected so that when this support is firmly attached to the substrate, the cavity present between the optical element and the integrated optoelectronic may be filled with a particular fluid (a gas or a liquid) if need be. With this cavity, it is also possible that only the support of the protective structure is in contact with the substrate. The material of the support may therefore be selected in order to avoid problems of heat expansion.
Step d) may correspond to the application of thinning of the support with stopping on the optical element.
Step a) for making the protective structure may correspond to the application of the following steps:
Step a) for making the protective structure may correspond to the application of the following steps:
The removal of the third layer may be obtained by a step for totally thinning the third layer or detaching the third layer when the latter is firmly attached by temporary adhesive bonding to the fourth layer.
In one alternative, the step a) for making the protective structure may correspond to the application of the following steps:
In one alternative, the step a) for making the protective structure may correspond to the application of the following steps:
The transfer of the optical elements into the holes etched through the fourth layer may be accomplished by collective transfer of the whole of the optical elements, or individually by detaching beforehand the optical elements from each other, and then by individually transferring them into the etched holes. Individual transfer (a transfer of the “Pick & Place” type) has the advantage of being able to sort out the optical elements and to only transfer the desired optical elements in the etched holes.
The step a) for making the protective structure may include at least the following sub-steps:
The method may further include, between the step for etching the hole through the fourth layer and the step for firmly attaching the third layer to the adhesive bonding interface, a step for depositing at least one layer at least partly opaque in the range of the operating wavelengths of the optoelectronic component and/or electrically conducting on remaining portions of the fourth layer and against walls of the hole etched through the fourth layer, forming an optical and/or electromagnetic protection of the device.
Generally, the method may further include during step a), the making of an optical and/or electromagnetic protection between the support and the optical element.
The method may further include, between step a) for making the protective structure and step b) for firmly attaching the support to a substrate, a step for depositing at least one layer at least partly opaque in the range of the operating wavelengths of the optoelectronic component and/or electrically conducting on at least one part of the walls of the blind hole and/or at least one part of the surface of the support firmly attached to the substrate, forming an optical and/or electromagnetic protection.
The support may be formed by a single layer, the blind hole may be obtained by etching in this layer.
The method may further include, after step d) for making the aperture, a step for depositing at least one layer, at least partly opaque in the range of the operating wavelengths of the optoelectronic component and/or electrically conducting on the walls of a rear face of the support, opposite to the face of the support firmly attached to the substrate.
The method may further include after step d) for making the aperture, a step for transferring at least one optical stack including at least one optical element onto a rear face of the support, opposite to the face of the support firmly attached to the substrate, in an optical field of the optoelectronic component positioned in the cavity.
The method may further include after the step for transferring the optical stack, the making of electric connections between the optical elements of the optical stack and/or of the protective structure and/or of the optoelectronic components.
The method may further include the making of an optical and/or electromagnetic protection on the optical stack.
In this case, the method may further include, after making the optical and/or electromagnetic protection, a step for making at least one aperture in said optical and/or electromagnetic protection in the optical field of the optoelectronic components.
The present invention will be better understood upon reading the description of exemplary embodiments given purely as an indication and by no means as a limitation with reference to the appended drawings wherein:
Identical, similar or equivalent portions of the different figures described hereafter bear the same numerical references so as to facilitate switching from one figure to the other.
The different portions illustrated in the figures are not necessarily illustrated according to a uniform scale, in order to make the figures more legible.
The different possibilities (alternatives and embodiments) have to be understood as not being exclusive of each other and they may be combined together.
First of all, reference will be made to
The structure 100 includes a layer 102 in which blind holes 104 are made. In the example of
The holes 104 may be made by lithography and DRIE (deep reactive ionic etching), molding, wet etching, sawing, laser cutting, hot pressing, stamping or further by micro-machining (for example sanding).
The optical elements 106 are transparent in the range of the operating wavelengths of the imagers of the optical device. Typically, the optical elements 106 may comprise glass and/or organic materials (for example for imagers operating in the range of visible wavelengths) and/or germanium (for imagers operating in the infrared range). The optical elements 106 may be plates with parallel faces consisting of optically homogeneous material or may be of a geometry with which particular optical functionalities may be achieved (filtering, magnification, etc.) in order to improve the performances of the corresponding imager. The optical elements 106 may for example be lenses.
In this exemplary embodiment, the layer 102 advantageously comprises the same material as the one making up the substrate including the imagers intended to be protected by the structure 100, for example semiconductor such as silicon and/or comprises LCP. It is also possible that the layer 102 comprises ceramic, organic materials or further metal, without this being a penalty for the thermomechanical behavior of the assembly formed by the structure 100 and the substrate with imagers after assembly. The material of the layer 102 may notably be selected depending on the material of the substrate so that these materials have substantially similar heat expansion coefficients.
In the exemplary embodiment described in connection with
In another alternative, it is possible that the openworked layer 105 be replaced with distinct material portions transferred onto the first layer 103, thereby forming a structure 100 including blind holes 104 in which the optical elements 106 are positioned. These portions transferred onto the first layer 103 may advantageously comprise the same material as the one making up the substrate including the imagers intended to be protected by the structure 100.
In order to obtain such a structure 100, the first and the second layers 103, 105 may first of all be firmly attached for example by adhesive bonding or lamination. The second layer 105 may also be made on the first layer 103 by PVD, CVD or electrolytic deposition, or by molding and injection-transfer. A structuration of the second layer 105 for forming the holes 104 is for example achieved by deep reactive ionic etching, molding, injection transfer, wet etching, sawing, laser cutting, hot pressing, micro-machining or further co-sintering if the first and the second layer 103, 105 comprise ceramic. When the second layer 105 is made on the first layer 103 by injection-transfer, the structuration of the second layer 105 may in this case be accomplished simultaneously with its achievement. Generally, the structuration of the second layer 105 may be made before, during or after the step for firmly attaching both layers 103 and 105.
Once the structure 100 is made, including the support formed by the layer 102 or both layers 103 and 105, in which the optical elements 106 are positioned, it is transferred onto a substrate 10 including imagers 12 in order to form an optical device 1000, as illustrated in
After the transfer of the structure 100 onto the substrate 10, each optical element 106 is found at a distance h from the imager 12 facing said optical element 106. This distance h is the distance between the pixel plane, i.e. here the plane from which light detection is performed by imagers 12, and the optical elements 106. The value of this distance h depends on the thickness eC of the optical element 106, on the thickness iC of the adhesive bonding interface 108, on the depth pW of the holes 104 and on the thickness ie of the adhesive bonding interface 14. The following relationship therefore holds:
h+e C +i C =p W +i e
The values of h, eC and iC may vary from one hole to the other of the protective structure 100. The value of ie is directly related to the selected technique for transferring the structure 100 onto the substrate 10. This dimension ie and therefore the selection of the transfer technique used, has an influence on the geometry of the optical device 1000. For a desired distance h and a fixed thickness eC of the optical element, the thicker the adhesive bonding interface 14, the less the depth of the hole 104 is significant.
In the example of
The geometry of the optical device 1000 may also be related to the topology of the substrate 10, notably when the adhesive bonding interface 14 is shifted relatively to the pixel plane by a distance t by means of spacer elements 16 positioned between the substrate 10 and the structure 100, and on which the adhesive bonding interface 14 is formed. An example of such a device is illustrated in
h+e C +i C =p W +i e +t
In this example, it is also possible to have either pW>eC+iC, pW=eC+iC or further pW<eC+iC.
Once the structure 100 is assembled to this substrate 10, different technological operations may be formed on the device 1000, as this is illustrated in
In the examples of
When the layer 102, or the first layer 103 in the case of the structure 100 of
These apertures 112 may be made before forming the electric contacts 17 and/or after having completed most of the technological operations performed on the device 1000 (thinning of the substrate 10, making the electric connections 18, 110).
It is also possible to thin the layer 102, from the rear face 120 of the layer 102. This thinning may be combined with the making of the apertures 112. In one alternative, it is also possible to totally thin the layer 102 until the optical elements 106 are reached, as this is illustrated in the example of
In the case of total thinning as illustrated in
In one alternative, the optical elements 106 may be integrated into the holes 104 by a method for injecting an organic material, for example LCP, between the optical element 106 and the hole 104, or further by a method for crimping the optical element 106 in the hole 104, thereby avoiding the presence of an adhesive bonding interface between the optical element 106 and one or several walls of the holes 104.
The method for transferring the optical elements 106 into the holes 104 may be of the unit type (“pick & place”), each optical element 106 being then successively placed in the holes 104. This type of transfer method is of interest when the optical elements are globally made at the scale of the substrate. In this case, preliminary sorting-out of the optical elements in order to end up with a substrate not including any faulty optical elements may be performed before assembling the structure 100 to the substrate 10. In an alternative, it is also possible to transfer the optical elements collectively, for example by a transfer of the DBG (“Dicing Before Grinding”) type during which the optical elements made collectively are precut and then assembled on the layer 103 (with precutting opposite to the layer 103) in order to be then thinned until singulation of the optical elements.
After assembling the structure 100 and the substrate 10, it is possible to cut out the optical device 1000 at solid areas of the layer 102 or at the portions 105, i.e. between the holes 104. In this way several unit assemblies are formed, each including an imager 12 and an optical element 106. Each of these unit assemblies may be treated independently, and for example be mounted in distinct camera modules. However, from the assembling of the structure 100 and of the substrate 10, it is also possible to completely or partly make the camera modules at the scale of the substrate collectively.
Different optical elements, for example lenses, may be transferred onto the rear face 120 of the layer 102 of the structure 100. On the device 1000 illustrated in
Generally, the geometry of the structure 100 may be different from those described in the previous examples. As illustrated in
Reference is now made to
As illustrated in
Cutting-out or etching of the second layer 200 is then performed in order to form the optical elements 106 according to the desired dimensions (
Concurrently with the making of the optical elements 106, the second part of the structure 100 is made, which will allow formation of the second openworked layer 105.
As illustrated in
Assembling both previously made parts of the protective structure 100 is performed, for example by adhesive bonding such as organic bonding by epoxy 210 (
Finally, total thinning of the layer 202 and suppression of the remaining portions of the SiO2 layer 208 is achieved, whereby a protective structure 100 similar to the one illustrated in
In order to obtain protective structures in which the optical components 106 are fitted to the dimensions of the holes 104, and the holes 104 of which have optical apertures to the imagers 12 of lesser dimensions than those of the optical elements 106, as in the examples illustrated in
Reference is now made to
First of all, a structure is made, similar to the one illustrated in
The exemplary embodiments described here include adhesive bonding interfaces of structured optical elements such that no bonding interface is in the optical field of the optical elements 106. However, during the method for making the protective structure 100, it is possible to have portions of adhesive present in the optical field of the elements 106, these portions being kept until the end of the method, even after opening the optical field of the elements 106 insofar that these portions have adequate optical properties, or else etched during the method, after opening the optical field of the elements 106. It is therefore possible to keep the dielectric and/or the adhesive bonding interfaces in the optical field of the elements 106. If, however, the dielectric degrades the optical performances, the dielectric and/or the adhesive bonding interfaces may be removed upon making the protective structure or optionally at the end of the method for making the optical device 1000, upon opening the protective structure at the optical field of the optical elements 106.
As illustrated in
Temporary adhesive bonding of a second layer comprising glass 306 is then achieved, layer from which optical elements 106 will be made, via an adhesive bonding interface 308, on the first layer 302 and on the resin portions 304 (
Portions of photosensitive resin (laminated dry film for example) are deposited on the optical elements 106, forming portions of interfaces 108 (
Because of the protective structure used, it is possible that this structure also achieves protection of the imagers from parasitic light, i.e. light located out of the optical field of the imagers, and/or from electromagnetic perturbations related to the operating environment of the optical device 1000 including the imagers (for example in a portable telephone).
A method for making an optical device including such a protective structure will now be described in connection with
A structure similar to the one illustrated in
As illustrated in
The steps described earlier in connection with
As illustrated in
Apertures 112 are then made in the first layer 103 in order to clear the optical field of the imagers 106 (
As illustrated in
Finally, additional optical levels may be achieved, as illustrated in
An opaque metal deposit 414 is then made on the device 1000 and notably on the walls of the trenches 412, with which the aperture of the device 1000 may be defined at the optical field and electric contact with the layer 106 may be resumed.
The method is then completed by making interconnection beads 17 under each imager 12 and by singulation of each portion of the device 1000 including at least one imager 12 (
With the device 1000 made according to the method described in connection with
The geometry of the optical elements 106 is not necessarily similar to that of the imagers 12 at their pixel planes, which for example is of a rectangular shape. The optical elements 106 may be of rectangular shape or of any other shape (square, circular, etc.) and/or have a form factor similar to or different from that of the imagers.
Of course, many alternative embodiments may be applied. In particular, all the embodiments of the cavities in a support may be used within the scope of the invention. Mention may notably be made of the method of the DBG type in which precutting before transfer and then thinning are achieved in order to obtain blind cavities.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5604160||Jul 29, 1996||Feb 18, 1997||Motorola, Inc.||Method for packaging semiconductor devices|
|US5798557||Aug 29, 1996||Aug 25, 1998||Harris Corporation||Lid wafer bond packaging and micromachining|
|US5915168 *||May 6, 1998||Jun 22, 1999||Harris Corporation||Lid wafer bond packaging and micromachining|
|US6285064||Mar 28, 2000||Sep 4, 2001||Omnivision Technologies, Inc.||Chip scale packaging technique for optical image sensing integrated circuits|
|US6607941||Jan 11, 2002||Aug 19, 2003||National Semiconductor Corporation||Process and structure improvements to shellcase style packaging technology|
|US6669803||Sep 29, 2000||Dec 30, 2003||Digital Optics Corp.||Simultaneous provision of controlled height bonding material at a wafer level and associated structures|
|US7144745||Aug 7, 2001||Dec 5, 2006||Tessera Technologies Hungary Kft.||Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced|
|US7223626||Aug 19, 2004||May 29, 2007||Micron Technology, Inc.||Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers|
|US20030011889||Jun 14, 2002||Jan 16, 2003||Brian Harden||Wafer level creation of multiple optical elements|
|US20040184134 *||Jan 15, 2004||Sep 23, 2004||Tomohiro Makigaki||Optical modulator, display device and manufacturing method for same|
|US20050184219||Feb 23, 2004||Aug 25, 2005||Kirby Kyle K.||Packaged microelectronic imagers and methods of packaging microelectronic imagers|
|US20050275750 *||Jun 9, 2004||Dec 15, 2005||Salman Akram||Wafer-level packaged microelectronic imagers and processes for wafer-level packaging|
|US20060035415||Aug 16, 2004||Feb 16, 2006||Wood Alan G||Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages|
|US20060043262||Aug 22, 2005||Mar 2, 2006||Micron Technology, Inc.||Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers|
|US20060044450||Sep 15, 2003||Mar 2, 2006||Koninklijke Philips Electronics, N.C.||Camera device, method of manufacturing a camera device, wafer scale package|
|US20070148807||Feb 14, 2007||Jun 28, 2007||Salman Akram||Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers|
|US20070187789||Apr 10, 2007||Aug 16, 2007||Digital Optics Corporation||Wafer based optical chassis and associated methods|
|US20070275505||Feb 21, 2007||Nov 29, 2007||Wolterink Edwin M||Camera device, method of manufacturing a camera device, wafer scale package|
|US20080023739||Jul 17, 2007||Jan 31, 2008||Stmicroelectronics Rousset Sas||Method of manufacturing a semiconductor wafer comprising an integrated optical filter|
|US20080293179||Jul 31, 2008||Nov 27, 2008||Salman Akram||Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers|
|US20110097909||Oct 26, 2010||Apr 28, 2011||Comm. A L'ener.Atom. Et Aux Energies Alt.||Interconnect structure with cavity having one or several contact rises on the wall of the cavity and method for producing same|
|EP1772908A2||Oct 5, 2006||Apr 11, 2007||Visera Technologies Company Ltd.||Wafer level image module, method for making the same and apparatus for assembling and testing the same|
|EP1811772A2||Jan 16, 2007||Jul 25, 2007||Visera Technologies Company Ltd.||Image sensor module having precise image-projection control|
|FR2851496A1||Title not available|
|FR2904144A1||Title not available|
|WO2004027880A2||Sep 16, 2003||Apr 1, 2004||Koninklijke Philips Electronics N.V.||Camera device, method of manufacturing a camera device, wafer scale package|
|WO2008011003A2||Jul 17, 2007||Jan 24, 2008||Tessera North America, Inc.||Camera system and associated methods|
|1||French Preliminary Search Report issued Feb. 2, 2009, in Patent Application No. 0853293.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8388793 *||Aug 29, 2011||Mar 5, 2013||Visera Technologies Company Limited||Method for fabricating camera module|
|US8879160||Sep 14, 2010||Nov 4, 2014||Commissariat A L'energie Atomique Et Aux Energies Alternatives||Optical device with deformable piezoelectric actuation membrane|
|US9075190||Sep 14, 2010||Jul 7, 2015||Commissariat Ó l'Únergie atomique et aux Únergies alternatives||Optical device with a piezoelectrically actuated deformable membrane shaped as a continuous crown|
|US9337037 *||Oct 31, 2012||May 10, 2016||Commissariat A L'energie Atomique Et Aux Energies Alternatives||Method for obtaining a heterogeneous substrate for the production of semiconductors|
|US20140306268 *||Oct 31, 2012||Oct 16, 2014||Commissariat A L'Energie Atomique Et Aux Energies Alternative||Method for obtaining a heterogeneous substrate for the production of semiconductors, and corresponding substrate|
|U.S. Classification||438/65, 438/459, 438/69, 438/456, 438/458, 438/75, 438/98, 438/667, 257/E31.127|
|International Classification||H01L21/46, H01L21/00, H01L21/44|
|Cooperative Classification||H01L31/02325, H01L2924/0002, H04N5/2253, H01L27/14609, H01L27/14618, H01L27/14625, H04N5/2257, H01L27/14696, H01L27/14685, H01L31/0203, H04N5/2254, G02B13/0085, G02B13/001|
|European Classification||G02B13/00M7, H01L27/146A6, H01L27/146V14, H01L27/146V2, H01L31/0203, H04N5/225C3, H04N5/225C4, H01L31/0232, H01L27/146A10, H01L27/146A4, H04N5/225M|
|Nov 22, 2010||AS||Assignment|
Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:BOLIS, SEBASTIEN;REEL/FRAME:025391/0266
Effective date: 20101102
|Jul 17, 2015||FPAY||Fee payment|
Year of fee payment: 4