USB281162I5 - - Google Patents

Info

Publication number
USB281162I5
USB281162I5 US28116272A USB281162I5 US B281162 I5 USB281162 I5 US B281162I5 US 28116272 A US28116272 A US 28116272A US B281162 I5 USB281162 I5 US B281162I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691962814 external-priority patent/DE1962814A1/en
Application filed filed Critical
Priority to US05/281,162 priority Critical patent/US4009481A/en
Publication of USB281162I5 publication Critical patent/USB281162I5/en
Application granted granted Critical
Publication of US4009481A publication Critical patent/US4009481A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/872Schottky diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
US05/281,162 1969-12-15 1972-08-16 Metal semiconductor diode Expired - Lifetime US4009481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/281,162 US4009481A (en) 1969-12-15 1972-08-16 Metal semiconductor diode

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DT1962814 1969-12-15
DE19691962814 DE1962814A1 (en) 1969-12-15 1969-12-15 Metal semiconductor diode
US9504870A 1970-12-04 1970-12-04
US05/281,162 US4009481A (en) 1969-12-15 1972-08-16 Metal semiconductor diode

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US9504870A Continuation 1969-12-15 1970-12-04

Publications (2)

Publication Number Publication Date
USB281162I5 true USB281162I5 (en) 1976-03-23
US4009481A US4009481A (en) 1977-02-22

Family

ID=27182287

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/281,162 Expired - Lifetime US4009481A (en) 1969-12-15 1972-08-16 Metal semiconductor diode

Country Status (1)

Country Link
US (1) US4009481A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4310568A (en) * 1976-12-29 1982-01-12 International Business Machines Corporation Method of fabricating improved Schottky barrier contacts
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
US4590664A (en) * 1983-07-29 1986-05-27 Harris Corporation Method of fabricating low noise reference diodes and transistors
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
US8080460B2 (en) 2008-11-26 2011-12-20 Micron Technology, Inc. Methods of forming diodes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3388000A (en) * 1964-09-18 1968-06-11 Texas Instruments Inc Method of forming a metal contact on a semiconductor device
US3597667A (en) * 1966-03-01 1971-08-03 Gen Electric Silicon oxide-silicon nitride coatings for semiconductor devices
US3476984A (en) * 1966-11-10 1969-11-04 Solitron Devices Schottky barrier semiconductor device
JPS4837625B1 (en) * 1968-01-05 1973-11-12
US3599054A (en) * 1968-11-22 1971-08-10 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture

Also Published As

Publication number Publication date
US4009481A (en) 1977-02-22

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