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Publication numberUSD443622 S1
Publication typeGrant
Application numberUS 29/114,440
Publication dateJun 12, 2001
Filing dateNov 26, 1999
Priority dateNov 26, 1999
Also published asUSD449618, USD449619, USD449836, USD452691
Publication number114440, 29114440, US D443622 S1, US D443622S1, US-S1-D443622, USD443622 S1, USD443622S1
InventorsHiroshi Iwasaki, Osami Suzuki
Original AssigneeKabushiki Kaisha Toshiba
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Partially transparent IC card
US D443622 S1
Abstract  available in
Images(13)
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Claims(1)
  1. The ornamental design for partially transparent IC card, as shown and described.
Description

FIG. 1 is a enlarged top, front and right side perspective view of partially transparent IC card showing our new design;

FIG. 2 is a top plan view thereof;

FIG. 3 is a front elevational view thereof;

FIG. 4 is a rear elevational view thereof;

FIG. 5 is a right side elevational view thereof;

FIG. 6 is a left side elevational view thereof;

FIG. 7 is a bottom plan view thereof;

FIG. 8 is a greatly enlarged cross-sectional view thereof, taken along line 8—8 in FIG. 7.

FIG. 9 is an enlarged top, front and right side perspective view of a second embodiment of the partially transparent IC card;

FIG. 10 is top plan view thereof;

FIG. 11 is a front elevational view thereof;

FIG. 12 is a rear elevational view thereof;

FIG. 13 is a right side elevational view thereof;

FIG. 14 is a left side elevational view thereof;

FIG. 15 is a bottom plan view thereof;

FIG. 16 is a greatly enlarged cross-sectional view thereof, taken along line 16—16 in FIG. 15.

FIG. 17 is an enlarged top, front and right side perspective view of a third embodiment of the partially transparent IC card;

FIG. 18 is a top plan view thereof;

FIG. 19 is a front elevational view thereof;

FIG. 20 is a rear elevational view thereof;

FIG. 21 is a right side elevational view thereof;

FIG. 22 is a left side elevational view thereof;

FIG. 23 is a bottom plan view thereof;

FIG. 24 is an enlarged cross-sectional view thereof, taken along line 24—24 in FIG. 23;

FIG. 25 is an enlarged top, front and right side perspective view of a fourth embodiment of the partially transparent IC card;

FIG. 26 is a top plan view thereof;

FIG. 27 is a front elevational view thereof;

FIG. 28 is a rear elevational view thereof;

FIG. 29 is a right side elevational view thereof;

FIG. 30 is a left side elevational view thereof;

FIG. 31 is a bottom plan view thereof; and,

FIG. 32 is a greatly enlarged cross-sectional view thereof, taken along line 32—32 in FIG. 31.

The broken line drawings in FIGS. 1, 2, 7, 9, 10, 15, 17, 18, 23, 25, 26 and 31 are for illustrative purposes only and form no part of the claimed design.

Non-Patent Citations
Reference
1Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 128 Mbit (16M×8bit) CMOS NAND E2PROM (16M Byte SmartMedia™), Toshiba, Nov. 6, 1998.
2Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 64 Mbit (8M×8bit) CMOS NAND E2PROM (8M byte SmartMedia™), Toshiba, Nov. 6, 1998.
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US6634561Jun 7, 2000Oct 21, 2003Sandisk CorporationMemory card electrical contact structure
US7547234Aug 11, 2003Jun 16, 2009Sandisk CorporationMemory card electrical contact structure
Classifications
U.S. ClassificationD14/479