Search Images Maps Play YouTube News Gmail Drive More »
Sign in
Screen reader users: click this link for accessible mode. Accessible mode has the same essential features but works better with your reader.

Patents

  1. Advanced Patent Search
Publication numberUSD449308 S1
Publication typeGrant
Application numberUS 29/114,441
Publication dateOct 16, 2001
Filing dateNov 26, 1999
Priority dateNov 26, 1999
Also published asUSD449047
Publication number114441, 29114441, US D449308 S1, US D449308S1, US-S1-D449308, USD449308 S1, USD449308S1
InventorsHiroshi Iwasaki, Osami Suzuki
Original AssigneeKabushiki Kaisha Toshiba
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Partially transparent IC card
US D449308 S1
Images(4)
Previous page
Next page
Claims(1)
  1. The ornamental design for partially transparent IC card, as shown and described.
Description

FIG. 1 is a enlarged top, front and right side perspective view of partially transparent IC card showing our new design;

FIG. 2 is a top plan view thereof;

FIG. 3 is a front elevational view thereof;

FIG. 4 is a rear elevational view thereof;

FIG. 5 is a right side elevational view thereof;

FIG. 6 is a left side elevational view thereof;

FIG. 7 is a bottom plan view thereof; and,

FIG. 8 is a greatly enlarged cross-sectional view thereof taken along line 8—8 in FIG. 2.

The phantom line showing in the drawings is for illustrative purposes only and forms no part of the claimed design.

Non-Patent Citations
Reference
1Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 128 Mbit (16M×8bit) CMOS NAND E2PROM (16M Byte SmartMedia™), Toshiba, Nov. 6, 1998.
2Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 64 Mbit (8M×8bit) CMOS NAND E2PROM (8M byte SmartMedia™), Toshiba, Nov. 6, 1998.
Classifications
U.S. ClassificationD14/478