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Publication numberUSD472531 S1
Publication typeGrant
Application numberUS 29/162,896
Publication dateApr 1, 2003
Filing dateJun 25, 2002
Priority dateJun 25, 2002
Publication number162896, 29162896, US D472531 S1, US D472531S1, US-S1-D472531, USD472531 S1, USD472531S1
InventorsHiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
Original AssigneeSony Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Semiconductor element
US D472531 S1
Abstract  available in
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  1. The ornamental design for a semiconductor element, as shown and described.

FIG. 1 is front perspective of a semiconductor element showing our new design, wherein the truncated hexagonal pyramid portion thereof is transparent;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a right side elevational view thereof;

FIG. 5 is a left side elevational view thereof; and,

FIG. 6 is a top plan view thereof.

Portions in broken lines are for illustrative purposes only and form no part of claimed design.

Non-Patent Citations
1D. Kapolnek et al., "Spatial control of InGaN luminescence by MOCVD selective epitaxy," Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998).
2J. Wang et al., "Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth," Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999).
3Koichi Tachibana et al., "Selective grough of InGaN quantum dot structures and their mircrophotoluminescence at room temperature," Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000).
4Raj Singh et al., "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique," MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998).
5Takao Someya et al., "Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser," Oyo Butsuri (Applied Physics), vol. 69, No. 10, pp. 1198-1199, (2000) with partial translation.
6W. Yang et al., "Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth," Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999).
7Zhigang Mao et al., "Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth," MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999).
U.S. ClassificationD13/182