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Publication numberUSD485242 S1
Publication typeGrant
Application numberUS 29/154,046
Publication dateJan 13, 2004
Filing dateJan 17, 2002
Priority dateJan 17, 2002
Publication number154046, 29154046, US D485242 S1, US D485242S1, US-S1-D485242, USD485242 S1, USD485242S1
InventorsToshiaki Iwafuchi, Toyoharu Oohata, Masato Doi
Original AssigneeSony Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Semiconductor element
US D485242 S1
Images(6)
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Claims(1)
  1. The ornamental design for a semiconductor element, as shown and described.
Description

FIG. 1 is a top, left, front perspective view of a semiconductor element showing our new design;

FIG. 2 is a bottom, left, front perspective view thereof;

FIG. 3 is a front elevational view thereof; and

FIG. 4 is a rear elevational view thereof.

FIG. 5 is a left side elevational view thereof;

FIG. 6 is a right side elevational view thereof;

FIG. 7 is a top plan view thereof; and,

FIG. 8 is a bottom plan view thereof.

The portions in even broken lines are for illustrative purposes only and form no part of the claimed design. The portions in dot-dash broken lines define, but are not included in, the boundaries of the claimed design.

Non-Patent Citations
Reference
1D. Kapolnek et al., "Spatial control of InGaN luminescence by MOCVD selective epitaxy," Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998).
2J. Wang et al., "Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth," Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999).
3Koichi Tachibana et al., "Selective grough of InGaN quantum dot structures and their microphotoluminescence at room temperature," Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000).
4Raj Singh et al., "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique," MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998).
5Takao Someya et al., "Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser," Oyo Butsuri (Applied Physics), vol. 69, No. 10, pp. 1198-1199, (2000) with partial translation.
6W. Yang et al., "Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth," Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999).
7Zhigang Mao et al., "Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth," MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999).
Classifications
U.S. ClassificationD13/182