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Publication numberUSD491963 S1
Publication typeGrant
Application numberUS 29/182,142
Publication dateJun 22, 2004
Filing dateMay 20, 2003
Priority dateNov 20, 2002
Publication number182142, 29182142, US D491963 S1, US D491963S1, US-S1-D491963, USD491963 S1, USD491963S1
InventorsShigeki Doba
Original AssigneeTokyo Electron Limited
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Inner wall shield for a process chamber for manufacturing semiconductors
US D491963 S1
Abstract  available in
Images(7)
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Claims(1)
  1. I claim the ornamental design for inner wall shield for a process chamber for manufacturing semiconductors, as shown and described.
Description

FIG. 1 atop/left-side/rear perspective view of a first embodiment of an inner wall shield for a process chamber for manufacturing semiconductors;

FIG. 2 a front elevational view thereof;

FIG. 3 a rear elevational view thereof;

FIG. 4 a right side elevational view thereof;

FIG. 5 a left side elevational view thereof;

FIG. 6 a top plan view thereof;

FIG. 7 a bottom plan view thereof;

FIG. 8 a cross-sectional view thereof taken along line 8—8 in FIG. 2;

FIG. 9 a cross-sectional view there taken along line 9—9 in FIG. 4

FIG. 10 an enlarged view of a right-end portion of FIG. 9.

FIG. 11 a top/left-side/rear perspective view of a second embodiment of an inner wall shield for a process chamber for manufacturing semiconductors;

FIG. 12 a front elevational vie thereof;

FIG. 13 a rear elevational view thereof;

FIG. 14 a right side elevational view thereof;

FIG. 15 a left side elevational view thereof;

FIG. 16 a top plan view thereof;

FIG. 17 a bottom plan view thereof;

FIG. 18 a cross-sectional view taken alone line 8—8 in FIG. 2;

FIG. 19 a cross-sectional view taken along 9—9 in FIG. 4; and,

FIG. 20 an enlarged view taken along line 10—10 in FIG. 9.

The inner wall shield for a process chamber for manufacturing semiconductors is typically attached along the inner wall of the process chamber of an etching device. When sufficient high frequency power is connected to upper and lower electrodes of the process chamber, plasma is generated between the electrodes and the inner wall shield prevents the plasma from damaging the inner wall of the process chamber. One or more of the five small circles in one or more of the cross patterns shown in FIGS. 1, 3, 3 and 4 (two patterns), for example, are through holes that are disclaimed in other embodiments (not shown). The outer diameters of the embodiments are preferably about 670 mm, the height of the first embodiment is preferably about 110 mm and the height of the second embodiment is preferably about 150 mm.

Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US20120018402 *Jul 17, 2011Jan 26, 2012Applied Materials, Inc.Plasma processing apparatus and liner assembly for tuning electrical skews
US20140053984 *Nov 29, 2012Feb 27, 2014Hyun Ho DohSymmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
USD665491 *Jan 25, 2012Aug 14, 2012Applied Materials, Inc.Deposition chamber cover ring
USD736261 *Nov 29, 2012Aug 11, 2015Cummins Inc.Shroud
Classifications
U.S. ClassificationD15/144