|Publication number||USD522470 S1|
|Application number||US 29/217,557|
|Publication date||Jun 6, 2006|
|Filing date||Nov 19, 2004|
|Priority date||Sep 9, 2004|
|Publication number||217557, 29217557, US D522470 S1, US D522470S1, US-S1-D522470, USD522470 S1, USD522470S1|
|Original Assignee||Kabushiki Kaisha Toshiba|
|Export Citation||BiBTeX, EndNote, RefMan|
|External Links: USPTO, USPTO Assignment, Espacenet|
FIG. 1 is a top plan view of portion of a semiconductor device, showing my new design; the opposite side being a mirror image thereof;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a right side elevational view thereof; the opposite side being a mirror image thereof;
FIG. 4 is a rear elevational view thereof; and,
FIG. 5 is an enlarged fragmented rear elevational view thereof, taken along the line 5—5 in FIG. 2.
The broken lines are for illustrative purposes only and form no part of the claimed design.