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Publication numberUSRE31749 E
Publication typeGrant
Application numberUS 06/168,777
Publication dateNov 27, 1984
Filing dateJul 11, 1980
Priority dateSep 3, 1975
Also published asDE2639598A1, DE2639598B2, US4100502
Publication number06168777, 168777, US RE31749 E, US RE31749E, US-E-RE31749, USRE31749 E, USRE31749E
InventorsOsamu Yamashiro
Original AssigneeHitachi, Ltd.
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Class B FET amplifier circuit
US RE31749 E
Abstract
A complementary inverter amplifier circuit comprising a complementary inverter including a p-channel MIS FET connected to a first source potential, an n-channel MIS FET connected to a second source potential, the gate of the two FETs being applied with a common linear input, respective load resistors connected to the drains of the complementary FETs, an output being derived from the interconnection point of the load resistors or from the drains of the FETs, and a bias resistor connected between the gate and the drain of each of the complementary FETs, the input being supplied to the gates of the FETs through respective capacitors. The p-channel FET and n-channel FET are individually biased so that the circuit may serve as a class B push pull amplifier of low power consumption.
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Claims(14)
What we claim is:
1. An FET circuit comprising an amplifier stage and a waveform shaping stage; said amplifier stage including a first p-channel FET and a first n-channel FET, means for biasing the gate of each of said FETs at a dc level nearly equal to its drain potential.[.;(.]..Iadd., .Iaddend.means for setting the potential differential between the source and the drain of each of said .[.FETS.]. .Iadd.FETs .Iaddend.at a voltage nearly equal to its threshold voltage.[.;).]..Iadd., said potential differential setting means being coupled between the drains of said FETs, .Iaddend.and means for supplying a linear input signal to said gates through respective capacitors; and said waveform shaping stage comprising means for converting a linear signal into a digital signal including a second p-channel FET having a gate coupled to the drain of said first p-channel FET, and a second n-channel FET having a gate coupled to the drain of said first n-channel FET .Iadd.and a drain coupled to the drain of said second p-channel FET, and output means coupled to the drains of the second p-channel and n-channel FETs for deriving the digital signal.Iaddend..
2. An amplifier circuit comprising a complementary inverter including a first FET of a first conductivity type connected to a first source potential, a second FET of a second conductivity type connected to a second source potential, and an input terminal connected to the gates of said first and second FETs, the circuit comprising:
a series connection of first and second load resistors connected between said first and second FETs;
a respective bias resistor connected between the gate and the drain of each of said first and second FETs;
a respective capacitor connected between the input terminal and the gate of each of said FETs; and
output means connected to the drains of said FETs.
3. The amplifier circuit according to claim 2, in which said output means comprises a terminal connected to the interconnection point of said load resistors.
4. The amplifier circuit according to claim 2, in which said output means comprises a pair of terminals connected to the drains of said first and second FETs, respectively. .[.
5. An amplifier circuit comprising, in combination, first and second operating voltage terminals of different potential level;
first and second field effect transistors (FET) of complementary conductivity type, each having a source, a gate and a drain, the sources of said complementary FETs being connected to said first and second operating voltage terminals respectively, the gates of said complementary FETs being ac-coupled to an input terminal; and
a resistor connected between the drains of said complementary FETs, the connection between said resistor and said complementary FETs serving as an output terminal..]. .[.6. The amplifier circuit according to claim 5, further comprising a biasing resistor connected between the gate and the drain of at least one of said first and second FETs, the bias potential between the gate and the source of said FETs being determined at a
potential nearly equal to its threshold voltage..]. 7. .[.The.]. .Iadd.An .Iaddend.amplifier circuit .[.according to claim 5, further comprising.]. .Iadd.comprising, in combination, first and second operating voltage terminals of different potential level;
first and second FETs of complementary conductivity type, each having a source, a gate and a drain, the sources of said complementary FETs being connected to said first and second operating voltage terminal respectively, the gates of said complementary FETs being ac-coupled to an input terminal;
a resistor connected between the drains of said complementary FETs, the connection between said resistor and at least one of said complementary FETs serving as an output terminal; and
bias means for applying the gates of said complementary FETs with bias voltages which have different potentials, wherein said bias means includes .Iaddend.a first and a second biasing .[.resistors.]. .Iadd.resistor .Iaddend.connected between the gates and the drains of said first and second FETs respectively, and an ac coupling capacitor connected between the gate of said first FET and said input terminal, the input terminal being connected directly to the gate of said second FET. .[.8. A complementary push-pull amplifier comprising:
a p-channel FET having a source coupled to a positive power source terminal, a gate and a drain;
an n-channel FET having a source coupled to a negative power source terminal, a gate and a drain;
resistive means coupled between said drains of said FETs and;
means for applying an a.c. input signal to said gates of said FETs to operate said FETs in a push-pull mode..]. .[.9. The amplifier as defined in claim 8 further including means for applying to the gate of one of said FETs a bias voltage substantially equal to its drain d.c. potential..].
.[.The.]. .Iadd.A complementary push-pull .Iaddend.amplifier .[.as defined claim 9 further including.]. .Iadd.comprising:
a p-channel FET having a source coupled to a positive power source terminal, a gate and a drain;
an n-channel FET having a source coupled to a negative power source terminal, a gate and a drain;
resistive means coupled between said drains of said FETs;
means for applying an a.c. input signal to said gates of said FETs to operate said FETs in a push-pull mode;
bias means for applying the gate of said FETs with bias voltages which have different potentials, said bias means including means for applying to the gate of one of said FETs a bias voltage substantially equal to its drain d.c. potential; and .Iaddend.means for applying to the gate of the other FET a bias voltage substantially equal to its drain d.c. potential, and a
d.c. blocking capacitor coupled between said gates of said FETs. 11. A complementary push-pull .Iadd.amplifier .Iaddend.comprising a p-channel FET, an n-channel FET, resistive load means connected .[.to at least one of.]. .Iadd.between the drains of .Iaddend.said FETs, a resistive bias means coupled between the gate and drain of .[.said.]. one .[.FET.]. .Iadd.of said FETs .Iaddend.for applying a bias voltage substantially equal to the drain d.c. potential of said FET to said gate thereof, .Iadd.another bias means for applying the gate of the other FET with a bias voltage which has a potential different from the potential at the gate of said one FET, .Iaddend.means for connecting said FETs and said resistive load means so that said resistive load means and the conduction paths between the sources and the drains of the respective FETs are connected in series and, means for applying an a.c. input signal to the gates of said FETs, the resistance of said load means being higher than the on-resistance of said one FET and the potential differential between the source and gate of said one FET approaching its threshold voltage .Iadd.and, output means coupled to the drain of at least one of said FETs
for deriving at least one output signal.Iaddend.. .[.12. The amplifier as defined in claim 11 comprising a d.c. blocking capacitor coupled between the gates of said FETs, resistive bias means coupled between the gate and drain of the other FET of applying a bias voltage substantially equal to the drain d.c. potential of the other FET to the gate thereof and, output deriving means wherein said load means is coupled between the drains of both FETs so as to act as a common load for said FETs, the resistance of said load means being higher than the on-resistance of the other FET and the potential differential between the source and gate of the other FET approaching its threshold voltage, said output deriving means deriving at
least one output from the node between the drains of both FETs..]. 13. The amplifier as defined in claim .[.12.]. .Iadd.22 in which a single capacitor is connected between the gates of .Iadd.said .Iaddend.both FETs, said a.c. input signal being directly applied to the gate of one of said FETs and being applied to the gate of the other by way of said single capacitor. .[.14. A complementary FET circuit comprising an amplifier stage and a succeeding state, each being comprised of complementary FETs, said amplifier stage including means for producing two output signals having d.c. potentials different from each other in response to an input signal, said succeeding stage having two input terminals for receiving
said two output signals..]. .[.15. The FET circuit as defined in claim 14, in which each of said stages comprises a p-channel FET and an n-channel FET, the respective potential differential between the source and the drain of each FET in said amplifier stage is supplied between the source and the gate of the corresponding FET in said succeeding stage, respectively, and said respective potential differential is substantially equal to the threshold voltage of that FET..]. .Iadd.16. A complementary push-pull amplifier comprising:
a first p-channel and a first n-channel FET;
a pair of bias resistive means each connected between the gate and the drain of said each FET;
another resistive means connected between the drains of said first p-channel and n-channel FETs;
capacitive means connected between the gates of said first p-channel and n-channel FETs;
input means coupled to the gates of said first p-channel and n-channel FETs for applying an input signal to said gates; and
output means coupled to said drains of said first p-channel and n-channel FETs for deriving at least one output signal. .Iaddend. .Iadd.17. The amplifier as defined in claim 16 further comprising a succeeding amplifier including a second p-channel and a second n-channel FET, the drains of which are connected to each other, the gates of the second p-channel and n-channel FETs being connected to said drains of said first p-channel and n-channel FETs, respectively, the drains of the second p-channel and
n-channel FETs serving as said output means. .Iaddend. .Iadd.18. The amplifier as defined in claim 17, in which said another resistive means comprises two resistive means connected in series, the node between the two resistive means serving as another output means. .Iaddend. .Iadd.19. An amplifier comprising
a first series circuit of first p-channel and n-channel FETs connected between a pair of power source terminals, and
a second series circuit of second p-channel and n-channel FETs connected between said power source terminals,
said first series circuit including resistive connection means for connecting the drain of said first p-channel FET to the drain of said first n-channel FET and bias means for applying to the gate of each of said first p-channel and n-channel FETs from the drain thereof a bias voltage substantially equal to the drain d.c. potential, and input means coupled to the gates of said first p-channel and n-channel FETs for applying an input signal to said gates, and
said second series circuit including first connecting means for connecting the drains of said second p-channel and n-channel FETs in common, and second connecting means for connecting the gates of said second p-channel and n-channel FETs to the drains of said first p-channel and n-channel FETs respectively, thereby causing respective bias points of said second p-channel and n-channel FETs to be substantially equal to those of said first p-channel and n-channel FETs, respectively, the drains of the second p-channel and n-channel FETs serving as an output means. .Iaddend.
.Iadd. . An amplifier circuit comprising:
a p-channel FET;
an n-channel FET, the conduction path between the source and the drain thereof being connected in series with the conduction path between the source and the drain of said p-channel FET between a pair of power source terminals;
means coupled between said drains of said both FETs for producing two output signals at said drains, the two output signals having different d.c. potentials, the difference between the d.c. potentials being determined by a voltage drop across said means;
first bias means coupled between said drain and said gate of said p-channel FET for causing the gate potential to respond to the drain d.c. potential thereof;
second bias means coupled between said drain and said gate of said n-channel FET for causing the gate potential to respond to the drain d.c. potential thereof; and
means for applying an input signal to both gates of said FETs. .Iaddend. .Iadd.21. A complementary inverter amplifier circuit comprising, in combination,
a first and a second inverting amplifier device of complementary types each having a common electrode, an input electrode and an output electrode and operating in push-pull mode;
a power source, the both ends of which are coupled between said common electrodes for applying an operating energy to said first and second inverting amplifier devices;
an input terminal for applying an input signal to said input electrodes of said first and second inverting amplifier devices in common-mode;
bias means for applying said input electrodes of said first and second inverting amplifier devices with bias voltages which have different potentials;
an a.c. coupling capacitor coupled between said input electrodes of said first and second inverting amplifier devices;
a circuit device coupled between said output electrode of said first and second inverting amplifier devices for producing two output signals which have a phase being opposite to the phase of the common-mode signals at said input electrodes of said first and second inverting amplifier devices, and which have different d.c. potentials; and
a succeeding complementary inverter amplifier stage having two input terminals for receiving said two output signals and having an output terminal for deriving an output signal which has the same phase as said common-mode signals at said input electrodes of said first and second
inverting amplifier devices. .Iaddend. .Iadd.22. A complementary push-pull amplifier comprising a p-channel FET, an n-channel FET, resistive load means connected between the drains of said FETs, a resistive bias means coupled between the gate and drain of one of said FETs for applying a bias voltage substantially equal to the drain d.c. potential of said FET to said gate thereof, another resistive bias means coupled between the gate and the drain of the other FET for applying a bias voltage substantially equal to the drain d.c. potential of the other FET to the gate thereof, a d.c. blocking capacitor coupled between the gate of said FETs, means for connecting said FETs and said resistive load means so that said resistive load means and the conduction paths between the sources and the drains of the respective FETs are connected in series and, means for applying an a.c. input signal to the gates of said FETs, the resistance of said load means being higher than the on-resistance of said one FET and the potential differential between the source and gate of said one FET approaching its threshold voltage, and output deriving means wherein said load means is coupled between the drains of both FETs so as to act as a common load for said both FETs, said output deriving means deriving at least one output from the drains of both FETs. .Iaddend.
Description
BACKGROUND OF THE INVENTION

1. FIELD OF THE INVENTION

This invention relates to an amplifier circuit and more particularly to a complementary metal-insulator-semiconductor (C-MIS) amplifier circuit comprising a p-channel metal-insulator-semiconductor field effect transistor (referred to as MIS FET or simply as FET, hereinbelow) and an n-channel MIS FET.

2. DESCRIPTION OF THE PRIOR ART

Conventionally, such a circuit as shown in FIG. 4 has been known as a crystal oscillator circuit used in an electronic wristwatch from U.S. Pat. No. 3,676,801 issued to F. H. Musa, an American publication, "RCA COS/MOS Integrated Circuits Manual" by RCA Corporation, pages 192 to 205, 1972, etc. The circuit of FIG. 4 basically comprises a C-MIS inverter circuit including an n-channel FET Mn and a p-channel FET Mp, and a positive feedback circuit or a regenerative feedback loop connected between the input and output terminals of the inverter circuit and including a crystal oscillator X and capacitors CD and CG. A resistor RD provided at the output of the amplifier circuit serves to stabilize the oscillation frequency.

Such a circuit as described above, however, has a problem in that the power consumption becomes large. This can be described as follows.

When the complementary inverter amplifier circuit constituting the main part of the oscillator circuit is driven with a complementary digital input signal without other components, the period during which both complementary FETs are turned on is very short and the power consumption due to the dc current passing through the two FETs caused little problem since the complementary FETs operate in a push-pull manner. When a linear (e.g., a sinusoidal) signal as shown in FIG. 5 is applied to the input terminal, however, the period during which the two FETs operate in the transfer region or in the neighborhood of the switching point (the region between the threshold voltages Vthn and Vthp of the FETs Mn and Mp, i.e., the hatched region Y in FIG. 5) becomes long and the power dissipation increases.

SUMMARY OF THE INVENTION

An object of this invention is, therefore, to provide a complementary inverter amplifier circuit of low power consumption.

Another object of this invention is to provide a complementary inverter amplifier circuit accompanied with no loss current through MIS FETs which occurs due to the threshold voltage of the MIS devices in the case of amplifying a linear input.

A further object of this invention is to provide a complementary MIS inverter amplifier circuit serving as a linear amplifier means in an oscillator circuit and having an arrangement of preventing a loss or invalid current through the inverter in supplying an oscillation output to a waveform shaping MIS inverter of the following stage.

Another object of this invention is to provide a complementary MIS inverter amplifier circuit capable of monolithic integration and adapted for use in the circuit requiring low power consumption such as a micropower crystal-controlled oscillator in an electronic timepiece such as an electronic wristwatch.

Another object of this invention is to provide a complementary MIS inverter amplifier circuit having a complementary MIS inverter biased to serve as a class B push-pull amplifier.

According to one aspect of this invention, there is provided a complementary inverter amplifier comprising a complementary inverter including a first FET of a first conductivity type connected to a first source potential and a second FET of a second conductivity type connected to a second source potential, an input being applied commonly to the gates of the first and the second FETs, the amplifier comprising a first and a second load resistors connected in series between the first and the second FETs, bias resistors connected between the gate and the drain of the first and the second FETs, an input being supplied to the gates of the FETs through respective capacitive elements and an output being derived from the interconnection point of the first and the second load resistors or from the drains of the first and the second FETs thereby providing a class B push-pull amplifier function.

These and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the invention when taken in conjunction with the accompanying drawings.

BRIEF DESCRPIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a complementary inverter amplifier according to an embodiment of this invention.

FIG. 2 shows voltage transfer characteristic curves for illustrating the operation of the circuit of FIG. 1.

FIG. 3 is a circuit diagram of an oscillator circuit including an embodiment of the amplifier circuit according to this invention.

FIG. 4 is a circuit diagram of a conventional oscillator circuit.

FIG. 5 is a graph for illustrating the reason for allowing a loss through-current in the conventional circuit of FIG. 4.

FIG. 6 is a circuit diagram of a complementary MIS FET amplifier according to another embodiment of this invention.

FIG. 7 is a circuit diagram illustrating a modification of FIG. 1.

FIG. 8 is a sectional view of an MIS capacitor illustrating an ac coupling capacitor used in the present amplifier.

Throughout the drawings, the same reference letters or characters indicate the same parts.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows a complementary inverter amplifier according to an embodiment of this invention, in which the circuit is arranged to operate as a class B push-pull amplifier by appropriately selecting the operational bias point of each of FETs Mn and Mp and to achieve reduction of the power consumption.

An n-channel enhancement mode FET Mn (grounded source) connected to a potential source -VDD and a p-channel enhancement mode FET Mp (grounded source) connected to a different potential source VSS, ground in this example are connected in a series fashion to form a complementary inverter. Here, between the complementary FETs Mn and Mp, two load resistors RL1 and RL2 of equivalent resistance are connected in series. Further, biasing resistors RF1 and RF2 are connected for the FETs Mn and Mp between the gate and the drain thereof, respectively. The gate of the FETs Mn and Mp are supplied with a common input signal Vin through respective capacitors C1 and C2 for ac coupling. An output Vout of the circuit is derived from the interconnection point of the load resistors RL1 and RL2. Letters C, D, A and B denote various points shown in the figure, i.e., the gates and drains of the FETs. The purposes of this invention can be achieved by the above structure as will be apparent from the following description of the operation of the circuit.

In FIG. 2, the ordinate represents the output voltage of the FET and the abscissa the input voltage. The solid curve represents the relation between the voltages c and a at the gate C and the drain A of the FET Mn, i.e., the voltage transfer characteristic curve of the FET Mn, while the broken curve represents the relation between the voltages d and b at the gate D and the drain B of the FET Mp, i.e., the voltage transfer characteristic curve of the FET Mp. The biasing resistors RF1 and RF2 serve to equalize the dc levels of the gate and the drain voltages of the FETs Mn and Mp, respectively. The lower the biasing resistance, the better stabilized is the biasing voltage, while the higher the biasing resistance, the higher held is the amplification factor. Considering these properties, the resistances of the biasing resistors RF1 and RF2 may be selected as approximately 10 megohms and may be formed of diffused resistors, polycrystalline Si resistors or on-resistances between the source and the drain of FETs. In detail, the biasing resistors RF1 and RF2 may be formed of on-resistances of a transmission gate of high resistance in the range of several to several tens megohms, which is formed of complementary MIS FETs to enable a monolithic integrated circuit form. The MIS FETs of the transmission gate are connected in parallel between the input and output terminals of the amplifier circuit. Here, the gate of the p-channel MIS FET is connected to the power supply voltage -VDD and the gate of the n-channel MIS FET to ground. Further, the higher is selected the resistance of the load resistors RL1 and RL2 compared to the on-resistance of the respective FETs, the steeper slope shows the voltage transfer characteristic curve and the closer the potential differential between the drain and the source (or gate-to-source) of each of the FETS Mn and Mp approaches the respective threshold voltage, the closer the biasing voltage approaches the threshold voltage, reducing the power consumption. Since the dc component in the input voltage Vin is blocked by the ac coupling or dc blocking capacitors C1 and C2, the biasing points of the FETs Mn and Mp are determined separately and independently of the input signal level.

When an input signal Vin, e.g., a linear signal such as a sinusoidal wave by the oscillating operation, is applied, the voltages at the gate points as shown by C and D in FIG. 1, of the FETs Mn and Mp receiving the input signal through the respective capacitors C1 and C2 are represented by the curves c and d in FIG. 2 respectively. Then, the FETS Mn and Mp having operational points as described above provide amplified outputs a and b at the respective drain points as shown by A and B in FIG. 1. A total output may take the combination of these signals a and b.

Therefore, in the former half of the cycle the FET Mp is turned on to generate a signal at the point B and in the latter half the FET Mn is turned on the generate a signal at the point A. Namely, the output signal in the whole cycle has a waveform as shown by the hatched areas in FIG. 2. In this way, the two FETs of the complementary type take charge of the amplification in respective half cycles to totally perform the operation of a class B push-pull amplifier.

According to the above structure, the present circuit performs the class B push-pull operation and hence the period during which the two FETS are both turned on becomes short. Thus, the period of allowing a through-current to pass becomes short and the power consumption is greatly reduced.

The above analysis holds perfectly when the circuit operates ideally. In practical use, however, there remains a small possibility of momentarily allowing the turning-on of both FETs, i.e., the flow of a through-current, from the relation to the operational speed of the FETs even in the above circuit. In such a case, however, the through-current is limited in magnitude by the load resistors RL1 and RL2 and is almost negligible. Therefore, a complementary inverter amplifier of low power comsumption is provided.

The present invention is not limited to the above embodiment and various alternations and modifications would be possible.

For example, the output of the above complementary amplifier is derived from the interconnection of the load resistors RL1 and RL2 connected in series between the conduction paths of the two FETS Mn and Mp in the above embodiment, but it may be replaced by those derived from the respective drains of the two FETs according to the use or purposes. An example of such a case is shown in FIG. 3 in which the inverter amplifier is used in an oscillator circuit.

FIG. 3 shows a crystal-controlled oscillator circuit for use in an electronic wristwatch. The complementary inverter circuit according to an embodiment of this invention is used as the amplifier means and a positive feed-back circuit including a crystal oscillator X and capacitors CD and CG is connected between the input and output terminals of the amplifier. Generally, an output signal Vout of this oscillator circuit is applied to a frequency divider circuit through a waveform shaping inverter which is also called a logic circuit. Here, the following problem arises.

Since the load resistors RL1 and RL2 are provided in the complementary inverter of the oscillator circuit, the output Vout of the oscillator resembles a sinusoidal wave. Therefore, if such a sinusoidal wave is directly applied to an inverter of the next circuit stage, a through-current is allowed to pass through the inverter for a long period to increase the power consumption.

Therefore, in the circuit of FIG. 3, the voltages VA and VB at the respective drains of the FETs Mn and Mp are derived as the outputs of the complementary amplifier and are applied to the gates of an n-channel FET Mnl and a p-channel FET Mpl of a complementary inverter, respectively, whose drain electrodes are connected in common to constitute an output terminal VE. The source electrodes of the FETs Mnl and Mpl are connected to the operating potential sources -VDD and VSS respectively. The output of the complementary inverter is then supplied to a frequency divider G through a waveform shaping inverter INV. In this arrangement, two amplified output signals VA and VB are supplied to the gates of the corresponding FETs Mnl and Mpl of the complementary inverter in the next circuit stage. Then, since no load resistor is used in this complementary inverter, a square wave is provided at an output terminal VE. Hence, the through-current in the waveform shaping inverter INV is minimized and an oscillator circuit of low power operation is provided.

FIG. 6 shows a complementary MIS amplifier circuit according to another embodiment of this invention, in which an n-channel MIS FET MN and a p-channel MIS FET MP are connected in series between two operating voltage terminals, one at -VDD and the other at a reference level, e.g., ground. A resistor RL is connected between the drains of the MIS FETs MN and MP to suitably limit a current passing through the conduction paths of these FETs. A biasing resistor RF is coupled between an input terminal IN and an output terminal OUT of the amplifier. The bias point for the MIS FET MP which is set at a potential in the neighborhood of the threshold voltage Vth of the MIS FET Mp is shown by way of example. The gates of the complementary MIS FETs MN and MP are commonly in ac sense connected to the input terminal IN. Output deriving points and linear biasing of the circuit may be selected in various manners according to the need of the designer, for example, as shown in FIG. 1 or FIG. 3.

In this circuit, since the conduction current limiting resistor RL is provided in the drain side of the amplifier FET but not in the source side, a feed-back loop as in the latter case is not formed, so that the amplifier circuit can achieve low power consumption without substantially lowering its amplification, and also, the dispersion or variation in the amplification of the amplifier due to the manufacturing dispersion of the resistance of the resistor RL becomes small. Further, since the MIS FET MP is biased to operate as class B amplifier, low power dissipation is successfully achieved.

FIG. 7 illustrates a modified circuit of FIG. 6 but similar to FIG. 1, in which no ac coupling capacitor is provided between the input terminal IN and the MIS FET MP and instead, this transistor is biased directly by the biasing resistor RF2. Consequently, no attenuation of an ac input signal due to the ac coupling capacitor, which will be applied to the MIS FET MP will occur. Also, since the number of circuit components is reduced compared with the circuit of FIG. 1, it is advantageous to produce the circuit in an IC chip. The output terminal OUT may be provided at the drain of the MIS FET MN.

Capacitors for ac coupling capacitors C1 and C2 may be integrated in an MIS integrated circuit. Namely, an MIS capacitor for the capacitor C1 or C2 may be formed as shown in FIG. 8 using a so-called silicon-gate MOS process by which other transistors are fabricated in the same chip. In the MIS capacitive structure, a p-type semiconductor well region 2 is formed in an n-type semiconductor substrate 1 grounded to constitute one electrode of the capacitor. A silicon dioxide layer 3 is formed over the surface of the semiconductor substrate. On the surface of the well region 2 a thin silicon dioxide film 4 is formed, on which a polycrystalline silicon layer 5 is provided to constitute the other electrode of the capacitor. The electrode layer 5 is led to a terminal E1. A p+ -type diffused region (not shown) is formed in the p-type well region 2 from which another terminal E2 is formed through the silicon dioxide layer 3. Thus, the capacitor is formed of an MOS capacitance established between the p-type well region and the polycrystalline silicon layer 5, and is isolated from ground. The leadout p+ -type region is diffused in the well region 2 simultaneously with the step of diffusing source and drain regions for other MIS elements.

It will be apparent that in the amplifier circuits described above, the polarities of the FETs may be reversed with the inversion of the polarity of the power source potentials.

Further, any circuits and/or circuit elements may be added to the basic circuit structures of the above embodiments for operating the circuit more effectively.

This invention can be widely utilized as an amplifier circuit of low power consumption adapted for monolithic integration.

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US2791644 *Nov 7, 1952May 7, 1957Rca CorpPush-pull amplifier with complementary type transistors
US3067337 *Jun 3, 1957Dec 4, 1962Cincinnati Milling Machine CoServo amplifier using push-pull, complementary, cascaded, transistors with means to superimpose a higher a. c. frequency on information signal
US3443237 *Mar 23, 1967May 6, 1969Bell Telephone Labor IncBalanced to unbalanced transistor amplifier
US3566145 *May 22, 1968Feb 23, 1971Gen ElectricRectifier circuit
US3676801 *Oct 28, 1970Jul 11, 1972Motorola IncStabilized complementary micro-power square wave oscillator
US3760584 *May 14, 1971Sep 25, 1973Hamilton Watch CoIntegrated circuit solid state watch
US3855549 *Aug 24, 1973Dec 17, 1974Rca CorpCircuit, such as cmos crystal oscillator, with reduced power consumption
US3855552 *Dec 17, 1973Dec 17, 1974Siemens AgOscillator utilizing complementary transistors in a push-pull circuit
US3906255 *Sep 6, 1974Sep 16, 1975Motorola IncMOS current limiting output circuit
US3953875 *Jan 2, 1974Apr 27, 1976Motorola, Inc.Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
US4015214 *Apr 3, 1975Mar 29, 1977Nippon Gakki Seizo Kabushiki KaishaPush-pull amplifier
DE1293230B *Sep 6, 1966Apr 24, 1969Rca CorpVerstaerkerschaltung mit Feldeffekt-Bauelementen
DE1916736A1 *Apr 1, 1969Oct 8, 1970Siemens AgGegentaktverstaerker mit zwei Transistoren entgegengesetzten Leitfaehigkeitstyps
DE2502697A1 *Jan 23, 1975Aug 14, 1975American Micro SystCmos-verstaerker, insbesondere fuer niedrige versorgungsspannung
GB1395337A * Title not available
JPS52846A * Title not available
JPS55658A * Title not available
Non-Patent Citations
Reference
1 *Electronics & Nucleonics Dictionary Markus, 1966, pp. 106 107, 3rd Ed., Group A.U. 252.
2Electronics & Nucleonics Dictionary-Markus, 1966, pp. 106-107, 3rd Ed., Group A.U. 252.
3Kalin, "Proceedings of the National Electronic Conference"; vol. 28, Oct. 8-10, 1973, Oakbrook (U.S.) pp. 368-372.
4 *Kalin, Proceedings of the National Electronic Conference ; vol. 28, Oct. 8 10, 1973, Oakbrook (U.S.) pp. 368 372.
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Citing PatentFiling datePublication dateApplicantTitle
US5302917 *Feb 12, 1993Apr 12, 1994Concorso James ALinear amplifier circuit for audio equipment
US5389827 *Apr 15, 1993Feb 14, 1995National Semiconductor CorporationQuick recovery AC coupling circuit
US5864254 *Mar 19, 1996Jan 26, 1999Rohm Co., Ltd.Differential amplifier circuit with enlarged range for source voltage and semiconductor device using same
US6320427 *Oct 11, 2000Nov 20, 2001Winbond Electronics Corp.High-speed, low-power continuous-time CMOS current comparator
US6489815 *Apr 23, 2001Dec 3, 2002Nec CorporationLow-noise buffer circuit that suppresses current variation
US6737924 *Dec 11, 2002May 18, 2004Intel CorporationDifferential, double feedback CMOS transimpedance amplifier with noise tolerance
US7365603 *Feb 23, 2005Apr 29, 2008Murata Manufacturing Co., Ltd.FET amplifier, pulse modulation module, and radar device
US7417473 *Mar 21, 2006Aug 26, 2008Denso CorporationSignal generator including current control element and signal forming element for achieving low noise level and low switching loss
US7719343 *Sep 8, 2003May 18, 2010Peregrine Semiconductor CorporationLow noise charge pump method and apparatus
US8378736Apr 27, 2010Feb 19, 2013Peregrine Semiconductor CorporationLow noise charge pump method and apparatus
US8406634Jul 14, 2011Mar 26, 2013Intel CorporationMethod and apparatus for optical signaling
US8536636Mar 11, 2011Sep 17, 2013Peregrine Semiconductor CorporationTuning capacitance to enhance FET stack voltage withstand
US8559907Mar 5, 2012Oct 15, 2013Peregrine Semiconductor CorporationIntegrated RF front end with stacked transistor switch
US8583111Dec 28, 2010Nov 12, 2013Peregrine Semiconductor CorporationSwitch circuit and method of switching radio frequency signals
US8649754Oct 13, 2010Feb 11, 2014Peregrine Semiconductor CorporationIntegrated RF front end with stacked transistor switch
US8669804Jun 18, 2010Mar 11, 2014Peregrine Semiconductor CorporationDevices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US8686787May 11, 2011Apr 1, 2014Peregrine Semiconductor CorporationHigh voltage ring pump with inverter stages and voltage boosting stages
US8742502Oct 19, 2011Jun 3, 2014Peregrine Semiconductor CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
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US8994452Jul 17, 2009Mar 31, 2015Peregrine Semiconductor CorporationLow-noise high efficiency bias generation circuits and method
US9024700Mar 2, 2009May 5, 2015Peregrine Semiconductor CorporationMethod and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US9030248Jul 17, 2009May 12, 2015Peregrine Semiconductor CorporationLevel shifter with output spike reduction
US9087899Mar 5, 2014Jul 21, 2015Peregrine Semiconductor CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
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US9130564Mar 25, 2013Sep 8, 2015Peregrine Semiconductor CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US9177737Sep 16, 2013Nov 3, 2015Peregrine Semiconductor CorporationTuning capacitance to enhance FET stack voltage withstand
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US9197194Aug 27, 2012Nov 24, 2015Peregrine Semiconductor CorporationMethods and apparatuses for use in tuning reactance in a circuit device
US9225378Oct 24, 2013Dec 29, 2015Peregrine Semiconductor CorpoprationSwitch circuit and method of switching radio frequency signals
US20050052220 *Sep 8, 2003Mar 10, 2005Burgener Mark L.Low noise charge pump method and apparatus
US20060244538 *Feb 23, 2005Nov 2, 2006Sadao YamashitaFet amplifier, pulse modulation module, and radar device
US20060267665 *Mar 21, 2006Nov 30, 2006Denso CorporationSignal generator
US20100033226 *Jul 17, 2009Feb 11, 2010Tae Youn KimLevel shifter with output spike reduction
US20110001542 *Jan 6, 2011Tero Tapio RantaDevices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US20110156819 *Jul 17, 2009Jun 30, 2011Tae Youn KimLow-Noise High Efficiency Bias Generation Circuits and Method
US20110227637 *Sep 22, 2011Stuber Michael AMethod and Apparatus Improving Gate Oxide Reliability by Controlling Accumulated Charge
Classifications
U.S. Classification330/264, 331/116.0FE, 330/267, 968/823, 327/109
International ClassificationH03F3/347, H01L27/04, H03F3/34, H03F3/30, H03F3/20, H03F3/213, H03K19/0948, H03F3/345, H01L21/822, G04F5/06, H03B5/36
Cooperative ClassificationH03F3/3028, H03K19/0948, G04F5/06
European ClassificationH03K19/0948, G04F5/06, H03F3/30B6B