Search Images Maps Play YouTube News Gmail Drive More »
Sign in
Screen reader users: click this link for accessible mode. Accessible mode has the same essential features but works better with your reader.

Patents

  1. Advanced Patent Search
Publication numberUSRE38465 E1
Publication typeGrant
Application numberUS 09/772,848
Publication dateMar 16, 2004
Filing dateJan 31, 2001
Priority dateDec 14, 1994
Publication number09772848, 772848, US RE38465 E1, US RE38465E1, US-E1-RE38465, USRE38465 E1, USRE38465E1
InventorsHitoshi Matsuzawa, Mikihiko Ishii, Issey Tanaka
Original AssigneeNikon Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Exposure apparatus
US RE38465 E1
Abstract
A projection optical system of the present invention has a first lens group G1 being positive, a second lens group G2 being negative, a third lens group G3 being positive, a fourth lens group G4 being negative, a fifth lens group G5 being positive, and a sixth lens group G6 being positive in the named order from the first object toward the second object, in which the second lens group G2 comprises an intermediate lens group G2M between a negative front lens L2F and a negative rear lens L2R and in which the intermediate lens group G2M is arranged to comprise at least a first positive lens being positive, a second lens being negative, a third lens being negative, and a fourth lens being negative in the named order from the first object toward the second object. The present invention involves findings of suitable focal length ranges for the first to the sixth lens groups G1 to G6 and an optimum range of an overall focal length of from the second negative lens to the fourth lens with respect to a focal length of the second lens group G2.
Images(15)
Previous page
Next page
Claims(190)
What is claimed is:
1. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, said first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said six lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group, and
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object.
2. A projection optical system according to claim 1, wherein the first lens with positive refracting power in said intermediate lens group in said second lens group has a lens shape with a convex surface to the second object.
3. A projection optical system according to claim 2, wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
4. A projection optical system according to claim 3, wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
5. A projection optical system according to claim 4, wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
6. A projection optical system according to claim 5, wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
7. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 5, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
8. A projection optical system according to claim 6, wherein said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object.
9. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 8, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
10. A projection optical system according to claim 1, wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having a negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
11. A projection optical system according to claim 1, wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
12. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 1, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
13. A projection optical system located between a first object and a second object, said projection optical system having a first lens group with positive refracting power, a second lens group with negative refracting power, a third lens group with positive refracting power, a fourth lens group with negative refracting power, a fifth lens group with positive refracting power, and a sixth lens group with positive refracting power in the named order from the first object toward the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f1, a focal length of said second lens group is f2, a focal length of said third lens group is f3, a focal length of said fourth lens group is f4, a focal length of said fifth lens group is f5, a focal length of said sixth lens group is f6, an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is fn, and a distance from the first object to the second object is L:
0.1<f1/f3<17
0.1<f2/f4<14
0.01<f5/L<0.9
0.02<f6/L<1.6
0.01<fn/f2<2.0.
14. A projection optical system according to claim 13, wherein the following condition is satisfied when an axial distance from the first object to a first-object-side focal point of the whole of said projection optical system is I and the distance from the first object to the second object is L:
1.0<I/L.
15. A projection optical system according to claim 14, therein wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f24:
0.07<f24/f23<7.
16. A projection optical system according to claim 15, wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f23:
0.01<f22/f23<10.
17. A projection optical system according to claim 16, wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f21 and the distance from the first object to the second object is L:
 0.230<f21/L<0.40.
18. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 16, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
19. A projection optical system according to claim 13, wherein said intermediate lens group in said second lens group has negative refracting power.
20. A projection optical system according to claim 13, wherein the following condition is satisfied when the focal length of said second lens group is f2 and the distance from the first object to the second object is L:
−0.8<f2/L<−0.050.
21. A projection optical system according to claim 13, wherein the following condition is satisfied when a focal length of said front lens placed as closest to the first object in said second lens group and having negative refracting power with a concave surface to the second object is f2F and a focal length of said rear lens placed as closest to the second object in said second lens group and having negative refracting power with a concave surface to the first object is f2R:
0≦f2F/f2R<18.
22. A projection optical system according to claim 13, wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f24:
0.07<f24/f23<7.
23. A projection optical system according to claim 13, wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f23:
0.1<f22/f23<10.
24. A projection optical system according to claim 13, wherein the following condition is satisfied when an axial distance from a second-object-side lens surface of said fourth lens with negative refracting power in said intermediate lens group in said second lens group to a first-object-side lens surface of said rear lens in said second lens group is D and the distance from the first object to the second object is L:
0.05<D/L<0.4.
25. A projection optical system according to claim 13, wherein said first lens with positive refracting power in said intermediate lens group in said second lens group has a lens shape with a convex surface to the second object, and
wherein the following condition is satisfied when the refracting power of a second-object-side lens surface of said first lens with positive refracting power in said intermediate lens group in said second lens group is Φ21 and the distance from the first object to the second object is L:
0.54<1/(Φ21·L)<10.
26. A projection optical system according to claim 13, wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f21 and the distance from the first object to the second object is L:
0.230<f21/L<0.40.
27. A projection optical system according to claim 13, wherein the following condition is satisfied when the focal length of said fourth lens group is f4 and the distance from said the first object to the second object is L:
−0.098<f4/L<−0.005.
28. A projection optical system according to claim 13, wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group, and
wherein the following condition is satisfied when a radius of curvature on the first object side in said rear lens places as closest to the second object in said fourth lens group is r4F and a radius of curvature on the second object side in said rear lens placed as closest to the second object in said fourth lens group is r4R:
−1.00≦(r4F−r4R)/(r4F+r4R)<0.
29. A projection optical system according to claim 13, wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens, and
wherein the following condition is satisfied when a radius of curvature of the concave surface of said negative meniscus lens in said fifth lens group is r5n and a radius of curvature of the convex surface opposed to the concave surface of said negative meniscus lens in said positive lens placed adjacent to the concave surface of said negative meniscus lens in said fifth lens group is r5p:
0<(r5p−r5n)/(r5p+r5n)<1.
30. A projection optical system according to claim 29, wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
31. A projection optical system according to claim 13, wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object, and
wherein the following condition is satisfied when a radius of curvature on the first object side in said negative lens closest to the second object in said fifth lens group is r5F and a radius of curvature on the second object side in said negative lens closest to the second object in said fifth lens group is r5R:
0.30<(r5F−r5R)/(r5F+r5R)<1.28.
32. A projection optical system according to claim 13, wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object and said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object, and
wherein the following condition is satisfied when a radius of curvature on the second object side, of said negative lens placed as closest to the second object in said fifth lens group is r5R and a radius of curvature on the first object side, of said lens placed as closest to the first object in said sixth lens group is r6F:
−0.90<(r5R−r6F)/(r5R+r6F)<−0.001.
33. A projection optical system according to claim 13, wherein the following condition is satisfied when a lens group separation between said fifth lens group and said sixth lens group is d56 and the distance from the first object to the second object is L:
d56/L<0.017.
34. A projection optical system according to claim 13, wherein the following condition is satisfied when a radius of curvature of a lens surface closest to the first object in said sixth lens group is r6F and an axial distance from the lens surface closest to the first object in said sixth lens group to the second object is d6:
0.50<d6/r6F<1.50.
35. A projection optical system according to claim 13, wherein said sixth lens group comprises three or less lenses having at least one surface satisfying the following condition:
1/|φL|<20,
where Φ: refracting power of the lens surface;
L: object-image distance from the first object to the second object.
36. A projection optical system according to claim 13, wherein a magnification of said projection optical system is 5:1.
37. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 13, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
38. A projection optical system according to claim 13, wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
39. A projection optical system according to claim 38, wherein the following condition is satisfied when a lens group separation between said fifth lens group and said sixth lens group is d56 and the distance from the first object to the second object is L:
d56/L<0.017.
40. A projection optical system according to claim 38, wherein the following condition is satisfied when a radius of curvature of a lens surface closest to the first object in said sixth lens group is r6F and an axial distance from the lens surface closest to the first object in said sixth lens group to the second object is d6:
0.50<d6/r6F<1.50.
41. A projection optical system according to claim 38, wherein said sixth lens group comprises three or less lenses having at least one surface satisfying the following condition:
1/|ΦL|<20.
where Φ: refracting power of the lens surface;
L:
object-image distance from the first object to the second object.
42. An exposure apparatus comprising:
a stage allowing a photosensitive substrate to be held on a main surface thereof;
an illumination optical system for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern on a mask onto the substrate; and
a projecting optical system for projecting an image of the mask, on the substrate surface, said projecting optical system having:
a first lens group with positive refracting power, said first lens group being placed between the mask and the main surface of said stage;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the main surface of said stage;
a third lens group with positive refracting power, said third lens groups being placed between said second lens group and the main surface of said stage;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the main surface of said stage;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the main surface of said stage; and
a sixth lens group, said sixth lens group being placed between said fifth lens group and the main surface of said stage,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having a negative refracting power with a concave surface to the second object, a rear lens as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group, and
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object.
43. An exposure apparatus according to claim 42,
wherein the following conditions are satisfied when a focal length of said first lens group is f1, a focal length of said second lens group is f2, a focal length of said third lens group is f3, a focal length of said fourth lens group is f4, a focal length of said fifth lens group is f5, a focal length of said sixth lens group is f6, an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is fn, and a distance from the first object to the second object is L:
0.1<f1/f3<17
0.1<f1/f4<14
0.01<f5/L<0.9
0.02<f6/L<1.6
0.01<fn/f2<2.0.
44. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, said first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said six lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens, and
wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
45. A projection optical system according to claim 44, wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
46. A projection optical system according to claim 45, wherein the following condition is satisfied when an axial distance from the first object to a first-object-side focal point of the whole of said projection optical system is I and the distance from the first object to the second object is L:
1.0<I/L.
47. A projection optical system according to claim 46, wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
48. A projection optical system according to claim 47,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f1, a focal length of said second lens group is f2, a focal length of said third lens group is f3, a focal length of said fourth lens group is f4, a focal length of said fifth lens group is f5, a focal length of said sixth lens group is f6, an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is fn, and a distance from the first object to the second object is L:
0.1<f1/f3<17
0.1<f2/f4<14
0.01<f5/L<0.9
0.02<f6/L<1.6
0.01<fn/f2<2.0.
49. A projection optical system according to claim 48, wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f24:
0.07<f24/f23<7.
50. A projection optical system according to claim 49, wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f23:
0.01<f22/f23<10.
51. A projection optical system according to claim 49 48, wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f23:
0.01<f22/f23<10.
52. A projection optical system according to claim 50, wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in second lens group is f21 and the distance from the first object to the second object is L:
0.230<f21/L<0.40.
53. A projection optical system according to claim 50 48, wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f21 and the distance from the first object to the second object is L:
0.230<f21/L<0.40.
54. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 50, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
55. A projection optical system according to claim 46,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f1, a focal length of said second lens group is f2, a focal length of said third lens group is f3, a focal length of said fourth lens group is f4, a focal length of said fifth lens group is f5, a focal length of said sixth lens group is f6, an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is fn, and a distance from the first object to the second object is L:
0.1<f1/f3<17
0.1<f2/f4<14
0.01<f5/L<0.9
0.02<f6/L<1.6
0.01<fn/f2<2.0.
56. A projection optical system according to claim 55, wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f24:
0.07<f24/f23<7.
57. A projection optical system according to claim 47, wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
58. A projection optical system according to claim 57, wherein the following condition is satisfied when a radius of curvature of a lens surface closest to the first object in said sixth lens group is r6F and an axial distance from the lens surface closest to the first object in said sixth lens group to the second object is d6:
0.50<d6/r6F<1.50.
59. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 58, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
60. A projection optical system according to claim 58,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f1, a focal length of said second lens group is f2, a focal length of said third lens group is f3, a focal length of said fourth lens group is f4, a focal length of said fifth lens group is f5, a focal length of said sixth lens group is f6, an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is fn, and a distance from the first object to the second object is L:
0.1<f1/f3<17
0.1<f2/f4<14
0.01<f5/L<0.9
0.02<f6/L<1.6
0.01<fn/f2<2.0.
61. A projection optical system according to claim 60, wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f24:
0.07<f24/f23<7.
62. A projection optical system according to claim 61, wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f23:
0.01<f22/f23<10.
63. A projection optical system according to claim 62, wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f21 and the distance from the first object to the second object is L:
0.230<f21/L<0.40.
64. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 44, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
65. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, said first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said sixth lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group, and
wherein the following condition is satisfied when a radius of curvature on the first object side in said rear lens placed as closest to the second object in said fourth lens group is r4F and a radius of curvature on the second object side in said rear lens placed as closest to the second object in said fourth lens group is r4R:
−1.00≦(r4F−r4R)/(r4F+r4R)<0.
66. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 65, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
67. A projection optical system according to claim 65, wherein said fifth lens group comprises a negative meniscus lens, and a positive lens places as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens, and
wherein the following condition is satisfied when a radius of curvature of the concave surface of said negative meniscus lens in said fifth lens group is r5n and a radius of curvature of the convex surface opposed to the concave surface of said negative meniscus lens in said positive lens placed adjacent to the concave surface of said negative meniscus lens in said fifth lens group is r5p:
0<(r5p−r5n)/(r5p+r5n)<1.
68. A projection optical system according to claim 67, wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
69. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 68, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
70. An exposure apparatus comprising:
a stage allowing a photosensitive substrate to be held on a main surface thereof;
an illumination optical system for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern on a mask onto said substrate; and
a projecting optical system for projecting an image of the pattern on said mask onto said substrate, said projecting optical system being provided between said mask and said substrate and having:
a first lens group with positive refracting power, said first lens group being placed between said mask and said substrate;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and said substrate;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and said substrate;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and said substrate;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and said substrate; and
a sixth lens group with positive refracting power, said sixth lens group being placed between said fifth lens group and said substrate,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens, and
wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
71. An exposure apparatus according to claim 70, wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
72. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, and first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said six lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group, and
wherein said intermediate lens group includes a positive lens and a negative lens.
73. A projection optical system according to claim 72, wherein the following condition is satisfied when an axial distance from the first object to a first-object-side focal point of the whole of said projection optical system is I and the distance from the first object to the second object is L:
1.0<I/L.
74. A projection optical system according to claim 73, wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
75. A projection optical system according to claim 73, wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
76. A projection optical system according to claim 75, wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
77. A projection optical system according to claim 76, wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
78. A projection optical system according to claim 77, wherein said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object.
79. A projection optical system according to claim 74, wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
80. A projection optical system according to claim 79, wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
81. A projection optical system according to claim 80, wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
82. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 80, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
83. A projection optical system according to claim 81, wherein said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object.
84. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 72, comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
85. A method of manufacturing a projection optical system to project an image of a first object onto a second object, comprising the steps of:
preparing a first lens group with positive power which includes at least two positive lenses;
preparing a second lens group with negative power;
preparing a third lens group with positive power which includes at least three positive lenses;
preparing a fourth lens group with negative power which includes at least three negative lenses;
preparing a fifth lens group with positive power which includes at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens;
preparing a sixth lens group with positive power which includes at least one positive lens;
disposing said first lens group in an optical path between an object surface in which the first object is disposed and said second lens group;
disposing said second lens group in an optical path between said first lens group and said third lens group;
disposing said third lens group in an optical path between said second lens group and said fourth lens group;
disposing said fourth lens group in an optical path between said third lens group and said fifth lens group;
disposing said fifth lens group in an optical path between said fourth lens group and said sixth lens group; and
disposing said sixth lens group in an optical path between said fifth lens group and an image plane in which the second object is disposed.
86. A method according to claim 85, wherein said step of disposing said fifth lens group comprises the step of placing said negative additional lens and said positive additional lens between two positive first lenses of said at least five positive first lenses.
87. A method according to claim 86, wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
88. A method according to claim 85, wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
89. A method according to claim 85, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens having a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative meniscus lens.
90. A method according to claim 86, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
91. A method according to claim 85, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
92. A method according to claim 86, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
93. A method according to claim 87, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
94. A method according to claim 88, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
95. A method according to claim 90, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
96. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 85, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
97. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 86, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
98. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 87, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
99. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 88, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
100. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 89, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
101. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 90, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
102. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 91, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
103. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 92, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
104. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 93, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
105. A method for exposing a pattern formed on a reticle onto a substrate by using a projection optical system manufactured by a method according to claim 85, comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
106. A method for exposing a pattern formed on a reticle onto a substrate by using a projection optical system manufactured by a method according to claim 86, comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
107. A method of manufacturing an exposure apparatus to expose an image of a first object onto a second object, comprising the steps of:
providing an illumination optical system to illuminate the first object; and
providing a projection optical system to project the image of the first object onto the second object;
wherein said projection optical system comprises:
a first lens group with positive power, said first lens group including at least two positive lenses;
a second lens group with negative power;
a third lens group with positive power, said third lens group including at least three positive lenses;
a fourth lens group with negative power, said fourth lens group including at least three negative lenses;
a fifth lens group with positive power, said fifth lens group including at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens; and
a sixth lens group with positive power, said sixth lens group including at least one positive lens;
wherein said first lens group is disposed in an optical path between an object surface in which the first object is disposed and said second lens group;
said second lens group is disposed in an optical path between said first lens group and said third lens group;
said third lens group is disposed in an optical path between said second lens group and said fourth lens group;
said fourth lens group is disposed in an optical path between said third lens group and said fifth lens group;
said fifth lens group is disposed in an optical path between said fourth lens group and said sixth lens group; and
said sixth lens group is disposed in an optical path between said fifth lens group and an image plane in which the second object is disposed.
108. A method according to claim 107, wherein said negative additional lens and said positive additional lens are placed between two positive first lenses of said at least five positive first lenses.
109. A method according to claim 108, wherein said negative additional lens placed in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
110. A method according to claim 107, wherein said negative additional lens placed in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
111. A method according to claim 107, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens having a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative meniscus lens.
112. A method according to claim 107, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
113. A method according to claim 107, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
114. A method according to claim 108, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
115. A method according to claim 109, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
116. A method according to claim 112, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
117. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 107, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
118. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 108, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
119. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 109, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
120. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 112, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
121. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 113, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
122. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 114, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
123. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 107, comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
124. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 108, comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
125. A method of manufacturing an exposure apparatus to expose an image of a first object onto a second object, comprising the steps of:
providing an illumination optical system to illuminate the first object; and
providing a projection optical system to project the image of the first object onto the second object;
wherein said step of providing said projection optical system comprises the steps of:
preparing a first lens group with positive power which includes at least two positive lenses;
preparing a second lens group with negative power;
preparing a third lens group with positive power which includes at least three positive lenses;
preparing a fourth lens group with negative power which includes at least three negative lenses;
preparing a fifth lens group with positive power which includes at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens;
preparing a lens sixth group with positive power which includes at least one positive lens;
disposing said first lens group in an optical path between an object surface in which the first object is disposed and said second lens group;
disposing said second lens group in an optical path between said first lens group and said third lens group;
disposing said third lens group in an optical path between said second lens group and said fourth lens group;
disposing said fourth lens group in an optical path between said third lens group and said fifth lens group;
disposing said fifth lens group in an optical path between said fourth lens group and said sixth lens group; and
disposing said sixth lens group in an optical path between said fifth lens group and an image plane in which the second object is disposed.
126. A method according to claim 125, wherein said step of disposing said fifth lens group comprises the step of placing said negative additional lens and said positive additional lens between two positive first lenses of said at least five positive first lenses.
127. A method according to claim 126, wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
128. A method according to claim 125, wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
129. A method according to claim 125, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens having a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative meniscus lens.
130. A method according to claim 125, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
131. A method according to claim 125, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
132. A method according to claim 126, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
133. A method according to claim 127, further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
134. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 125, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
135. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 126, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
136. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 127, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
137. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 128, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
138. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 131, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
139. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 132, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
140. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 133, comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
141. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 125, comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
142. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 126, comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
143. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 127, comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
144. A method for fabricating at least a semiconductor device or a liquid crystal device, comprising the steps of:
providing a reticle having a predetermined pattern;
providing a substrate;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of the pattern formed on the reticle onto the substrate by using a projection optical system;
wherein said projection optical system comprises:
a first lens group with positive power, said first lens group including at least two positive lenses;
a second lens group with negative power;
a third lens group with positive power, said third lens group including at least three positive lenses;
a fourth lens group with negative power, said fourth lens group including at least three negative lenses;
a fifth lens group with positive power, said fifth lens group including at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens; and
a sixth lens group with positive power, said sixth lens group including at least one positive lens;
wherein said first lens group is disposed in an optical path between an object surface in which the reticle is disposed and said second lens group;
said second group is disposed in an optical path between said first lens group and said third lens group;
said third lens group is disposed in an optical path between said second lens group and said fourth lens group;
said fourth lens group is disposed in an optical path between said third lens group and said fifth lens group;
said fifth lens group is disposed in an optical path between said fourth lens group and said sixth lens group; and
said sixth lens group is disposed in an optical path between said fifth lens group and an image plane at which the substrate is disposed.
145. A method according to claim 144, wherein said negative additional lens and said positive additional lens are placed between two positive first lenses of said at least five positive first lenses.
146. A method according to claim 145, wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
147. A method according to claim 145, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
148. A method according to claim 144, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
149. A method according to claim 145, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
150. A method according to claim 146, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
151. A method according to claim 147, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
152. A method for exposing a pattern formed on a reticle onto a substrate, comprising the steps of:
providing the reticle having a predetermined pattern;
providing the substrate in an image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of the pattern formed on the reticle onto the substrate by using a projection optical system;
wherein said projection optical system comprises:
a first lens group with positive power, said first lens group including at least two positive lenses;
a lens second group with negative power;
a third lens group with positive power, said third lens group including at least three positive lenses;
a fourth lens group with negative power, said fourth lens group including at least three negative lenses;
a fifth lens group with positive power, said fifth lens group including at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens; and
a sixth lens group with positive power, said sixth lens group including at least one positive lens;
wherein said first lens group is disposed in an optical path between an object surface in which the reticle is disposed and said second lens group;
said second lens group is disposed in an optical path between said first lens group and said third lens group;
said third lens group is disposed in an optical path between said second lens group and said fourth lens group;
said fourth lens group is disposed in an optical path between said third lens group and said fifth lens group;
said sixth lens group is disposed in an optical path between said fifth lens group and the image plane at which the substrate is disposed.
153. A method according to claim 152, wherein said negative additional lens and said positive additional lens are placed between two positive first lenses of said at least five positive first lenses.
154. A method according to claim 153, wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
155. A method according to claim 153, wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
156. A method according to claim 152, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
157. A method according to claim 153, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
158. A method according to claim 154, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
159. A method according to claim 155, wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
160. A projection optical system disposed in an optical path between a first surface on which a reticle is arranged and a second surface on which a substrate is arranged, for projecting a pattern of the reticle onto the substrate, comprising:
a first positive lens group having a positive power and disposed in the optical path between said first and second surfaces, said first positive lens group comprising a positive lens having a convex surface and a negative lens having a concave surface disposed near said positive lens and facing said convex surface, and two adjacent positive lenses disposed in an optical path between the positive lens and the second surface and disposed in an optical path between the negative lens and the second surface;
a first negative lens group having a negative power and disposed on an optical path between said first surface and said first positive lens group, said first negative lens group comprising at least three negative lenses;
a second positive lens group having a positive power and disposed in an optical path between said first surface and said first negative lens group, said second positive lens group comprising at least three positive lenses;
a second negative lens group having a negative power and disposed in an optical path between said first surface and said second positive lens group, said second negative lens group comprising at least one lens having a concave surface facing said first surface; and
a rear lens group disposed in an optical path between the first positive lens group and the second surface and having a positive power, the rear lens group comprising at least one positive lens;
none of the lenses constructing said projection optical system being a compound lens, and a numerical aperture of said projection optical system at the second surface on which the substrate is arranged comprising at least 0.55.
161. The projection optical system according to claim 160, further comprising an aperture stop disposed in an optical path at a position upstream with respect to said positive lens having said convex surface and said negative lens having said concave surface disposed near said positive lens having said convex surface.
162. The projection optical system according to claim 160, wherein said projection optical system comprises a lens made of fluorite.
163. The projection optical system according to claim 160, wherein said first positive lens group comprises a plurality of lenses having concave surfaces opposite to the second surface respectively.
164. The projection optical system according to claim 163, wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
165. The projection optical system according to claim 160, wherein the first positive lens group comprises a negative lens arranged nearest to the second surface.
166. The projection optical system according to claim 165, further comprising a front lens group disposed in an optical path between said second negative lens group and the first surface, said front lens group comprising at least two lenses.
167. The projection optical system according to claim 160, wherein said projection optical system comprises a lens made of fluorite and said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
168. The projection optical system according to claim 161, wherein said projection optical system comprises a lens made of fluorite and said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
169. An exposure apparatus for exposing a pattern of a reticle onto a substrate, comprising:
an illumination optical system which illuminates the reticle; and
a projection optical system disposed in an optical path between a first surface on which the reticle is arranged and a second surface on which the substrate is arranged, for projecting the pattern of the reticle onto the substrate, said projection optical system comprising:
a first positive lens group having a positive power and disposed in the optical path between said first and second surfaces, said first positive lens group comprising a positive lens having a convex surface, a negative lens having a concave surface disposed near said positive lens and facing said convex surface, and two adjacent positive lenses disposed in an optical path between the positive lens and the second surface and disposed in an optical path between the negative lens and the second surface;
a first negative lens group having a negative power and disposed on an optical path between said first surface and said first positive lens group, said first negative lens group comprising at least three negative lenses;
a second positive lens group having a positive power and disposed in an optical path between said first surface and said first negative lens group, said second positive lens group comprising at least three positive lenses;
a second negative lens group having a negative power and disposed in an optical path between said second positive lens group and said first surface, said second negative lens group comprising at least one lens having a concave surface facing said first surface; and
a rear lens group disposed in an optical path between the first positive lens group and the second surface and having a positive power, the rear lens group comprising at least one positive lens;
none of the lenses constructing said projection optical system being a compound lens, and a numerical aperture of said projection optical system at the second surface on which the substrate is arranged comprising at least 0.55.
170. The exposure apparatus according to claim 169, wherein said projection optical system comprises a lens made of fluorite.
171. The exposure apparatus according to claim 170, further comprising an aperture stop disposed in an optical path at a position upstream with respect to said positive lens having said convex surface and said negative lens having said concave surface disposed near said positive lens having said convex surface.
172. The exposure apparatus according to claim 169, wherein the two adjacent positive lenses in the first positive lens group have concave surfaces opposite to the second surface respectively.
173. The exposure apparatus according to claim 172, wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
174. The exposure apparatus according to claim 170, wherein said illumination optical system comprises an excimer laser supplying a light having a wavelength of 193 nm.
175. The exposure apparatus according to claim 169, wherein the first positive lens group and said comprises a negative lens arranged nearest to the second surface.
176. The exposure apparatus according to claim 169, further comprising a front lens group disposed in an optical path between said second negative lens group and the first surface, said front lens group comprising at least two lenses.
177. The exposure apparatus according to claim 169, wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
178. The exposure apparatus according to claim 170, wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
179. The exposure apparatus according to claim 176, wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
180. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 169, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
181. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 170, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
182. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 171, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
183. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 172, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
184. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 173, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
185. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 174, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
186. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 175, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
187. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 176, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
188. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 177, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
189. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 178, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
190. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 179, said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
Description

This is a continuation of application Ser. No. 08/706,761, filed Sep. 3, 1996, which is a continuation application of application Ser. No. 08/384,081, filed Feb. 6, 1995, both now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an exposure apparatus having a projection optical system for projecting a pattern of a first object onto a photosensitive substrate or the like as a second object, and more particularly to a projection optical system suitably applicable to projection exposure of a pattern for semiconductor or liquid crystal formed on a reticle (mask) as the first object onto the substrate (semiconductor wafer, plate, etc.) as the second object.

2. Related Background Art

As the patterns of integrated circuits become finer and finer, the resolving power required for the exposure apparatus used in printing of wafer also becomes higher and higher. In addition to the improvement in resolving power, the projection optical systems of the exposure apparatus are required to decrease image stress.

Here, the image stress includes those due to bowing or the like of the printed wafer on the image side of projection optical system and those due to bowing or the like of the reticle with circuit pattern written therein, on the object side of projection optical system, as well as distortion caused by the projection optical system.

With a recent further progress of fineness tendency of transfer patterns, demands for decreasing the image stress are also becoming greater.

In order to decrease effects of the wafer bowing on the image stress, the conventional technology has employed the so-called image-side telecentric optical system that locates the exit pupil position at a farther point on the image side of projection optical system.

On the other hand, the image stress due to the bowing of reticle can also be reduced by employing a so-called object-side telecentric optical system that locates the entrance pupil position of projection optical system at a farther point from the object plane, and there are suggestions to locate the entrance pupil position of projection optical system at a relatively far position from the object plane as described. Examples of those suggestions are described for example in Japanese Laid-open Patent Applications No. 63-118115 and No. 5-173065 and U.S. Pat. No. 5,260,832.

SUMMARY OF THE INVENTION

An object of the invention is to provide an exposure apparatus having a high-performance projection optical system which can correct the aberrations, particularly the distortion, very well even in the bitelecentric arrangement while keeping a relatively wide exposure area and a large numerical aperture.

To achieve the above object, the present invention involves an exposure apparatus having a high-performance projection optical system comprising a stage allowing a photosensitive substrate (for example, a semiconductor wafer coated with a photosensitive material such as a photoresist) to be held on a main surface thereof, an illumination optical system having a light source for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern on a mask onto the substrate, and a projecting optical system for projecting an image of the mask, on the substrate surface. The above projecting optical system projects an image of a first object (for example, a mask with a pattern such as an integrated circuit) onto a second object (for example, a photosensitive substrate).

As shown in FIG. 1, the projection optical system has a first lens group G1 with positive refracting power, a second lens group G2 with negative refracting power, a third lens group G3 with positive refracting power, a fourth lens group G4 with negative refracting power, a fifth lens group G5 with positive refracting power, and a sixth lens group G6 with positive refracting power in the named order from the side of the first object R. The and the second lens group G2 further comprises a front lens L2F placed as closest to the first object R and having negative refracting power with a concave surface to the second object W, a rear lens L2R placed as closest to the second object and having negative refracting power with a concave surface to the first object R, and an intermediate lens group G2M placed between the front lens L2F in the second lens group G2 and the rear lens L2R in the second lens group G2. The intermediate lens group G2M has a first lens LM1 with positive refracting power, a second lens LM2 with negative refracting power, a third lens LM3 with negative refracting power, and a fourth lens LM4 with negative refracting power in the named order from the side of the first object R.

First, the first lens group G1 with positive refracting power contributes mainly to a correction of distortion while maintaining telecentricity, and specifically, the first lens group G1 is arranged to generate a positive distortion to correct in a good balance negative distortions caused by the plurality of lens groups located on the second object side after the first lens group G1. The second lens group G2 with negative refracting power and the fourth lens group G4 with negative refracting power contribute mainly to a correction of Petzval sum to make the image plane flat. The two lens groups of the second lens group G2 with negative refracting power and the third lens group G3 with positive refracting power form an inverse telescopic system to contribute to guarantee of back focus (a distance from an optical surface such as a lens surface closest to the second object W in the projection optical system to the second object W) in the projection optical system. The fifth lens group G5 with positive refracting power and the sixth lens group G6 similarly with positive refracting power contribute mainly to suppressing generation of distortion and suppressing generation particularly of spherical aberration as much as possible in order to fully support high NA structure on the second object side.

Based on the above structure, the front lens L2F placed as closest to the first object R in the second lens group G2 and having the negative refracting power with a concave surface to the second object W contributes to corrections of curvature of field and coma, and the rear lens L2R placed as closest to the second object W in the second lens group G2 and having the negative refracting power with a concave surface to the first object R to corrections of curvature of field, coma, and astigmatism. In the intermediate lens group G2M placed between the front lens L2F and the rear lens L2R, the first lens LM1 with positive refracting power contributes to a correction of negative distortions caused by the second to fourth lenses LM2-LM4 with negative refracting power greatly contributing to the correction of curvature of field.

In particular, in the above projecting optical system, the following conditions (1) to (5) are satisfied when a focal length of the first lens group G1 is f1, a focal length of the second lens group G2 is f2,a focal length of the third lens group G3 is f3, a focal length of the fourth lens group G4 is f4, a focal length of the fifth lens group G2 is f5,a focal length of the sixth lens group G6 is f6,an overall focal length of the second to the fourth lenses LM2-LM4 in the intermediate lens group G2M in the second lens group G2 is fn, and a distance from the first object R to the second object W is L:

0.1<f1/f3<17  (1)

0.1<f2/f4<14  (2)

0.1<f5/L<0.9  (3)

0.1<f6/L<1.6  (4)

0.1<fn/f2<2.0  (5)

The condition (1) defines an optimum ratio between the focal length f1 of the first lens group G1 with positive refracting power and the focal length f3 of the third lens group G3 with positive refracting power, which is an optimum refracting power (power) balance between the first lens group G1 and the third lens group G3. This condition (1) is mainly for correcting the distortion in a good balance. Below the lower limit of this condition (1) a large negative distortion is produced because the refracting power of the third lens group G3 becomes relatively weak to the refracting power of the first lens group G1. Above the upper limit of the condition (1) a large negative distortion is produced because the refracting power of the first lens group G1 becomes relatively weak to the refracting power of the third lens group G3.

The condition (2) defines an optimum ratio between the focal length f2 of the second lens group G2 with negative refracting power and the focal length f3 of the fourth lens group G1 with negative refracting power, which is an optimum refracting power (power) balance between the second lens group G2 and the fourth lens group G4. This condition (2) is mainly for keeping the Petzval sum small so as to correct the curvature of field well while securing a wide exposure field. Below the lower limit of the condition (2), a large positive Petzval sum appears because the refracting power of the fourth lens group G4 becomes relatively weak to the refracting power of the second lens group G4. Above the upper limit of the condition (2) a large positive Petzval sum appears because the refracting power of the second lens group G2 becomes relatively weak to the refracting power of the fourth lens group G4. In order to correct the Petzval sum in a better balance under a wide exposure field by making the refracting power of the fourth lens group G4 strong relative to the refracting power of the second lens group G2the lower limit of the above condition (2) is preferably set to 0.8, i.e., 0.8<f 2/f4.

The condition (3) defines an optimum ratio between the focal length f5 of the fifth lens group G5 with positive refracting power and the distance (object-image distance) L from the first object R (reticle or the like) and the second object W (wafer or the like). This condition (3) is for correcting the spherical aberration, distortion, and Petzval sum in a good balance while keeping a large numerical aperture. Below the lower limit of this condition (3) the refracting power of the fifth lens group G5 is too strong, so that this fifth lens group G3 generates not only a negative distortion but also a great negative spherical aberration. Above the upper limit of this condition (3) the refracting power of the fifth lens group G5 is too weak, so that the refracting power of the fourth lens group G4 with negative refracting power inevitably also becomes weak therewith, thereby resulting in failing to correct the Petzval sum well. The condition (4) defines an optimum ratio between the focal length f6 of the sixth lens group G6 with positive refracting power and the distance (object-image distance) L from the first object R (reticle etc.) to the second object W (wafer or the like). This condition (4) is for suppressing generation of higher-order spherical aberrations and negative distortion while keeping a large numerical aperture. Below the lower limit of this condition (4) the sixth lens group G6 itself produces a large negative distortion; above the upper limit of this condition (4) higher-order spherical aberrations appear.

The condition (5) defines an optimum ratio between the overall focal length fn of the second lens LM2 with negative refracting power to the fourth lens LM4 with negative refracting power in the intermediate lens group G2M in the second lens group G2 and the focal length f2 of the second lens group G2. It should be noted that the overall focal length fn, stated herein, of the second lens LM2 with negative refracting power to the fourth lens LM4 with negative refracting power in the intermediate lens group G2M in the second lens group G2 means not only an overall focal length of three lenses, i.e., the second lens LM2 to the fourth lens LM4, but also an overall focal length of three or more lenses between the second lens LM2 and the fourth lens LM4 where there are a plurality of lenses between the second lens and the fourth lens.

This condition (5) is for keeping the Petzval sum small while suppressing generation of distortion. Below the lower limit of this condition (5), a great negative distortion appears because the overall refracting power becomes too strong, of the negative sublens group including at least three negative lenses of from the second negative lens LM2 to the fourth negative lens LM4 in the intermediate lens group G2M in the second lens group G2. In order to sufficiently correct the distortion and coma, the lower limit of the above condition (5) is preferably set to 0.1, i.e., 0.1<fn/f2.

Above the upper limit of this condition (5) a great positive Petzval sum results because the refracting power of the negative sublens group including at least three negative lenses of from the second negative lens LM2 to the fourth negative lens LM4 in the intermediate lens group G2M in the second lens group G2 becomes too weak. In addition, the refracting power of the third lens group G3 also becomes weak. Thus, it becomes difficult to construct the projection optical system in a compact arrangement. In older to achieve a sufficiently compact design while well correcting the Petzval sum, the upper limit of the above condition (5) is preferably set to 1.3, i.e., fn/f2<1.3.

Further, the following condition (6) is preferably satisfied when the axial distance from the first object R to the first-object-side focal point F of the entire projection optical system is I and the distance from the first object R to the second object W is L.

1.0<I/L  (6)

The condition (6) defines an optimum ratio between the axial distance I from the first object R to the first-object-side focal point F of the entire projection optical system and the distance (object-image distance) L from the first object R (reticle or the like) to the second object W (wafer or the like). Here, the first-object-side focal point F of the entire projection optical system means an intersecting point of outgoing light from the projection optical system with the optical axis after collimated light beams are let to enter the projection optical system on the second object side in the paraxial region with respect to the optical axis of the projection optical system and when the light beams in the paraxial region are outgoing from the projection optical system.

Below the lower limit of this condition (6) the first-object-side telecentricity of the projection optical system will become considerably destroyed, so that changes of magnification and distortion due to an axial deviation of the first object R will become large. As a result, it becomes difficult to faithfully project an image of the first object R at a desired magnification onto the second object W. In order to fully suppress the changes of magnification and distortion due to the axial deviation of the first object R, the lower limit of the above condition (6) is preferably set to 1.7, i.e., 1.7<I/L. Further, in order to correct a spherical aberration and a distortion of the pupil both in a good balance while maintaining the compact design of the projection optical system, the upper limit of the above condition (6) is preferably set to 6.8, i.e., I/L<6.8.

Also, it is more preferable that the following condition (7) be satisfied when the focal length of the third lens L., with negative refracting power in the intermediate lens group G2M in the second lens group G2 is f23 and the focal length of the fourth lens LM4 with negative refracting power in the intermediate lens group G2M in the second lens group G2 is f24.

0.07<f24f23<7.  (7)

Below the lower limit of the condition (7) the refracting power of the fourth negative lens LM4 becomes strong relative to the refracting power of the third negative lens LM3 so that the fourth negative lens LM4 generates a large coma and a large negative distortion. In order to correct the coma better while correcting the negative distortion, the lower limit of the above condition (7) is preferably set to 0.14, i.e., 0.14<f24f23. Above the upper limit of this condition (7) the refracting power of the third negative lens LM3 becomes relatively strong relative to the refracting power of the fourth negative lens LM4, so that the third negative lens LM3 generates a large coma and a large negative distortion. In order to correct the negative distortion better while correcting the coma, the upper limit of the above condition (7) is preferably set to 3.5, i.e., f24/f23<3.5.

Further, it is more preferable that the following condition (8) be satisfied when the focal length of the second lens LM2 with negative refracting power in the intermediate lens group G2M in the second lens group G2 is f22 and the focal length of the third lens LM3 with negative refracting power in the intermediate lens group G2M in the second lens group G2 is f23.

0.1<f22/f23<10  (8)

Below the lower limit of the condition (8) the refracting power of the second negative lens LM2 becomes strong relative to the refracting power of the third negative lens LM3, so that the second negative lens LM2 generates a large coma and a large negative distortion. In order to correct the negative distortion in a better balance, the lower limit of the above condition (8) is preferably set to 0.2, i.e., 0.24<f22/f23. Above the upper limit of this condition (8) the refracting power of the third negative lens LM3 becomes strong relative to the refracting power of the second negative lens LM2, so that the third negative lens LM3 generates a large coma and a large negative distortion. In order to correct the negative distortion in a better balance while well correcting the coma, the upper limit of the above condition (8) is preferably set to 5, i.e., f22/f23<5.

Also, it is more desirable that the following condition (9) be satisfied when the axial distance from the second-object-side lens surface of the fourth lens LM4 with negative refracting power in the intermediate lens group G2M in the second lens group G2 to the first-object-side lens surface of the rear lens L2R in the second lens group G2 is D and the distance from the first object R to the second object W is L:

0.05<D/L<0.4.  (9)

Below the lower limit of the condition (9) it becomes difficult not only to secure a sufficient back focus on the second object side but also to correct the Petzval sum well. Above the upper limit of the condition (9) a large coma and a large negative distortion appear. Further, for example, in order to avoid mechanical interference between a reticle stage for holding the reticle as the first object R and the first lens group G1, there are cases that it is preferable to secure a sufficient space between the first object R and the first lens group G1, but there is a problem that to secure the sufficient space will become difficult above the upper limit of the condition (9).

Also, the fourth lens group G4 preferably satisfies the following condition when the focal length of the fourth lens group G4 is f4 and the distance from the first object R to the second object W is L.

−0.98<f4/L<−0.005  (10)

Below the lower limit of the condition (10) the correction of spherical aberration becomes difficult, which is not preferable. Also, above the upper limit of the condition (10), the coma appears, which is not preferable. In order to well correct the spherical aberration and Petzval sum, the lower limit of the condition (10) is preferably set to −0.078, i.e., −0.078<f4/L, and further, in order to suppress generation of coma, the upper limit of the condition (10) is preferably set to −0.047, i.e., f4/L<−0.047.

Further, the second lens group G2 preferably satisfies the following condition when the focal length of the second lens group G2 is f2 and the distance from the first object R to the second object W is L.

−0.8<f2/L<−0.005  (11)

Here; below the lower limit of the condition (11), a positive Petzval sum results, which is not preferable. Also, above the upper limit of the condition (11), a negative distortion appears, which is not preferable. In order to better correct the Petzval sum, the lower limit of the condition (11) is preferably set to −0.16, i.e., −0.16<f2/L, and in order to better correct the negative distortion and coma, the upper limit of the condition (11) is preferably set to −0.0710, i.e., f2/L<−0.0710.

In order to well correct mainly the third-order spherical aberration, it is more desirable that the fifth lens group G5 with positive refracting power have the negative meniscus lens L54, and the positive lens L54 placed adjacent to the concave surface of the negative meniscus lens L54 and having a convex surface opposed to the concave surface of the negative meniscus lens L54 and that the following condition (12) be satisfied when the radius of curvature of the concave surface in the negative meniscus lens L54 in the fifth lens group G3 is r5n and the radius of curvature of the convex surface opposed to the concave surface of the negative meniscus lens L54 in the positive lens L53 set adjacent to the concave surface of the negative meniscus lens L54 in the fifth lens group G5 is r5p.

0<(r5p−r5n)/(r5p+r5n)<1  (12)

Below the lower limit of the condition (12), correction of the third-order spherical aberration becomes insufficient; conversely, above the upper limit of the condition (12), the correction of the third-order spherical aberration becomes excessive, which is not preferable. Here, in order to correct the third-order spherical aberration better, the lower limit of the condition (12) is more preferably set to 0.01, i.e., 0.01<(r5p−r5n)/(r5p+r5n) and the upper limit of the condition (12) is more preferably set to 0.7, i.e., (r5p−r5n)/(r5p+r5n)<0.7.

Here, it is preferred that the negative meniscus lens and the positive lens adjacent to the concave surface of the negative meniscus lens be set between the at least one positive lens in the fifth lens group G5 and the at least one positive lens in the fifth lens group G5. For example, a set of the negative meniscus lens L54 and the positive lens L53 is placed between the positive lenses L52 and L55. This arrangement can suppress generation of the higher-order spherical aberrations which tend to appear with an increase in NA.

Also, it is more desirable that the fourth lens group G4 with negative refracting power have the front lens L41 placed as closest to the first object R and having the negative refracting power with a concave surface to the second object W, the rear lens L44 placed as closest to the second object W and having the negative refracting power with a concave surface to the first object R, and at least one negative lens placed between the front lens L41 in the fourth lens group G4 and the rear lens L41 in the fourth lens group G4 and that the following condition (13) be satisfied when a radius of curvature on the first object side in the rear lens L44 placed as closest to the second object W in the fourth lens group G4 is r4F and a radius of curvature on the second object side in the rear lens L44 placed as closest to the second object W in the fourth lens group G4 is r4R.

−1.00≦(r4F−r4R)/(r4F+r4R)<0  (13)

Below the lower limit of the condition (13), the rear negative lens L44 located closest to the second object W in the fourth lens group G4 becomes of a double-concave shape, which generates higher-order spherical aberrations; conversely, above the upper limit of the condition (13), the rear negative lens L44 located closest to the second object W in the fourth lens group G4 will have positive refracting power, which will make the correction of Petzval sum more difficult.

Further, it is desirable that the fifth lens group G5 have the negative lens L58 with a concave surface to the second object W, on the most second object side thereof. This enables the negative lens L58 located closest to the second object W in the fifth lens group G5 to generate a positive distortion and a negative Petzval sum, which can cancel a negative distortion and a positive Petzval sum generated by the positive lenses in the fifth lens group G5.

In this case, in order to suppress the negative distortion without generating the higher-order spherical aberrations in the lens L61 located closest to the first object R in the sixth lens group G6, it is desirable that the lens surface closest to the first object R have a shape with a convex surface to the first object R and that the following condition be satisfied when a radius of curvature on the second object side, of the negative lens L58 placed as closest to the second object W in the fifth lens group G5 is r5R and a radius of curvature on the first object side, of the lens L61 placed as closest to the first object R in the sixth lens group G6 is r6F.

−0.90)<(r5R−r5F)/(r5R+r5F)<−0.001  (14)

This condition (14) defines an optimum shape of a gas lens formed between the fifth lens group G5 and the sixth lens group G6 Below the lower limit of this condition (14) a curvature of the second-object-side concave surface of the negative lens L58 located closest to the second object W in the fifth lens group G5 becomes too strong, thereby generating higher-order comas. Above the upper limit of this condition (14) refracting power of the gas lens itself formed between the fifth lens group G5 and the sixth lens group G6 becomes weak, so that a quantity of the positive distortion generated by this gas lens becomes small, which makes it difficult to well correct a negative distortion generated by the positive lenses in the fifth lens group G5. In order to fully suppress the generation of higher-order comas, the lower limit of the above condition (14) is preferably set to −0.30, i.e., −0.30<(r5R−r6F)/(r5R+r6F).

Also, it is further preferable that the following condition be satisfied when a lens group separation between the fifth lens group G5 and the sixth lens group G6 is d56 and the distance from the first object R to the second object W is L.

d54L<0.017  (15)

Above the upper limit of this condition (15), the lens group separation between the fifth lens group G5 and the sixth lens group G6 becomes too large, so that a quantity of the positive distortion generated becomes small. As a result, it becomes difficult to correct the negative distortion generated by the positive lens in the fifth lens group G5 in a good balance.

Also, it is more preferable that the following condition be satisfied when a radius of curvature of the lens surface closest m the first object R in the sixth lens group G6 is r6F and an axial distance from the lens surface closest to the first object R in the sixth lens group G6 to the second object W is d6.

0.50<d,6/r6F<1.50  (16)

Below the lower limit of this condition (16), the positive refracting power of the lens surface closest to the first object R in the sixth lens group G6 becomes too strong, so that a large negative distortion and a large coma are generated. Above the upper limit of this condition (16), the positive refracting power of the lens surface closest to the first object R in the sixth lens group G61 becomes too weak, thus generating a large coma. In order to further suppress the generation of coma, the lower limit of the condition (16) is preferably set to 0.84, i.e., 0.84<d6/r6F.

It is desirable that the following condition (17) be satisfied when the radius of curvature on the first object side in the negative lens L58 located closest to the second object W in the fifth lens group G5 is r5F and the radius of curvature on the second object side in the negative lens L58 located closest to the second object W in the fifth lens group G5 is r5R.

0.30<(r5F−r5R)/(r5F+r5R)<1.28  (17)

Below the lower limit of this condition (17), it becomes difficult to correct both the Petzval sum and the coma; above the upper limit of this condition (17), large higher-order comas appear, which is not preferable. In order to further prevent the generation of higher-order comas, the upper limit of the condition (17) is preferably set to 0.93, i.e., (r5F−r5R)/(r5F+r5R)<0.93.

Further, it is desirable that the second-object-side lens surface of the first lens LM1 with positive refracting power in the intermediate lens group G2M in the second lens group G2 be of a lens shape with a convex surface to the second object W, and in this case, it is more preferable that the following condition (18) be satisfied when the refracting power on the second-object-side lens surface of the first positive lens LM1 in the intermediate lens group G2m in the second tens group G2 is Φ21 and the distance from the first object R to the second object W is L.

0.54<1/(Φ21·L)<10  (18)

The refracting power of the second-object-side lens surface, stated herein, of the first lens LM1 with positive refracting power in the intermediate lens group G2M is given by the following formula when a refractive index of a medium for the first lens LM1 is n1, a refracting index of a medium in contact with the second-object-side lens surface of the first lens LM1 is n2, and a radius of curvature of the second-object-side lens surface of the first lens is r21.

Φ21=(n2−n1)/r21

Below the lower limit of the condition (18), higher-order distortions appear; conversely, above the upper limit of the condition (18), it becomes necessary to correct the distortion more excessively by the first lens group G1, which generates the spherical aberration of the pupil, thus being not preferable.

Further, it is more preferable that the following condition (19) be satisfied when the focal length of the first lens LM4 with positive refracting power in the intermediate lens group G2M in the second lens group G2 is f21 and the distance from the first object R to the second object W is L.

0.230<f</L<0.40  (19)

Below the lower limit of the condition (19), a positive distortion appears; above the upper limit of the condition (19), a negative distortion appears, thus not preferable.

Also, the front lens L2F and rear lens L2R in the second lens group G2 preferably satisfy the following condition when the focal length of the front lens L2F placed as closest to the first object R in the second lens group G2 and having the negative refracting power with a concave surface to the second object W is f2F and the focal length of the rear lens L2R placed as closest to the second object W in the second lens group G2 and having the negative refracting power with a concave surface to the first object R is f2R.

0f2F/f2R<18  (20)

The condition (20) defines an optimum ratio between the focal length f2R of the rear lens L2R in the second lens group G2 and the focal length r2F of the front lens L2F in the second lens group G2. Below the lower limit and above the upper limit of this condition (20), a balance is destroyed for refracting power of the first lens group G1 or the third lens group G3, which makes it difficult to correct the distortion well or to correct the Petzval sum and the astigmatism simultaneously well.

The following specific arrangements are desirable to provide the above respective lens groups with sufficient aberration control functions.

First, in order to provide the first lens group G1 with a function to suppress generation of higher-order distortions and spherical aberration of the pupil, the first lens group G1 preferably has at least two positive lenses; in order to provide the third lens group G3 with a function to suppress degradation of the spherical aberration and the Petzval sum, the third lens group G3 preferably has at least three positive lenses; further, in order to provide the fourth lens group G4 with a function to suppress the generation of coma while correcting the Petzval sum, the fourth lens group G4 preferably has at least three negative lenses. Further, in order to provide the fifth lens group G5 with a function to suppress generation of the negative distortion and the spherical aberration, the fifth lens group G5 preferably has at least five positive lenses; further, in order to provide the fifth lens group G5 with a function to correct the negative distortion and the Petzval sum, the fifth lens group G5 preferably has at least one negative lens. Also, in order to provide the sixth lens group G6 with a function to converge light on the second object W without generating a large spherical aberration, the sixth lens group G6 preferably has at least one positive lens.

In addition, in order to correct the Petzval sum better, the intermediate lens group G2 in the second lens group G2 preferably has negative refracting power.

In order to provide the sixth lens group G6 with a function to further suppress the generation of the negative distortion, the sixth lens group G6 is preferably constructed of three or less lenses having at least one surface satisfying the following condition (21).

1/|ΦL|<20  (21)

where Φ: refracting power of the lens surface;

L: object-image distance from the first object R to the second object W.

The refracting power of the lens surface stated herein is given by the following formula when the radius of curvature of the lens surface is r, a refracting index of a medium on the first object side, of the lens surface is n1, and a medium on the second object side, of the lens surface is n2.

Φ=(n2−n1)/r

Here, if there are four or more lenses having the lens surface satisfying this condition (21), the number of lens surfaces with some curvature, located near the second object W, becomes increased, which generates the distortion, thus not preferable.

The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not to be considered as limiting the present invention.

Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art form this detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is drawing to show parameters defined in embodiments of the present invention.

FIG. 2 is a drawing to show schematic structure of an exposure apparatus according to the present invention.

FIG. 3 is a lens makeup diagram in the first embodiment according to the present invention.

FIG. 4 is a lens makeup diagram in me second embodiment according to the present invention.

FIG. 5 is a lens makeup diagram in the third embodiment according to the present invention.

FIG. 6 is a lens makeup diagram in the fourth embodiment according to the present invention.

FIG. 7 is a lens makeup diagram in the fifth embodiment according to the present invention.

FIG. 8 is a lens makeup diagram in the sixth embodiment according to the present invention.

FIG. 9 is various aberration diagrams in the first embodiment according to the present invention.

FIG. 10 is various aberration diagrams in the second embodiment according to the present invention.

FIG. 11 is various aberration diagrams in the third embodiment according to the present invention.

FIG. 12 is various aberration diagrams in the fourth embodiment according to the present invention.

FIG. 13 is various aberration diagrams in the fifth embodiment according to the present invention.

FIG. 14 is various aberration diagrams in the sixth embodiment according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The embodiments according to the present invention will be described in detail in the following. An exposure apparatus of the invention comprises a projection optical system as showing in FIG. 2.

First, briefly describing FIG. 2, a reticle R (first object) is placed as a mask on which a predetermined circuit pattern 101 is formed, on the object plane of a projection optical system PL and a wafer W (second object) as a photosensitive substrate on the image plane of the projection optical system PL, as shown. The reticle R is held on a reticle stage RS while the wafer W on a wafer stage WS. The photosensitive substrate comprises the wafer W and a photosensitive layer 100 made of a material as a photoresistor. Further, an illumination optical system IS, which has a light source 102 for emitting exposure light of a predetermined wavelength, for uniformly illuminating the reticle R is set above the reticle R.

In the above arrangement, light supplied from the illumination optical system IS illuminates the reticle R to form an image of a light source in the illumination optical apparatus IS at the pupil position (or a position of aperture stop AS) of the projection optical system PL, thus achieving the so-called Kohler illumination. Then, through the projection optical system PL, a pattern image of the thus K öhler-illuminated reticle R is projected (or transferred) onto the wafer W through the photosensitive layer 100 by the projection optical system PL. The techniques relating to an exposure apparatus of the present invention ate described for example in U.S. Pat. No. 5,194,993, U.S. Pat. No. 5,097,291 and U.S. Pat. No. 5,245,384 and U.S. patent application Ser. No. 299,305, U.S. patent application Ser. No. 255,927 and U.S. patent application Ser. No. 226,327.

The present embodiment shows an example of projection optical system where the light source 102 inside the illumination optical system IS is an excimer laser supplying light with exposure wavelength λof 248.4 nm, and FIG. 3 to FIG. 8 are lens makeup diagrams of projection optical systems in the first to sixth embodiments according to the present invention.

As shown in FIG. 3 to FIG. 8, a projection optical system in each embodiment has a first lens group G1 with positive refracting power, a second lens group G2 with negative refracting power, a third lens group G3 with positive refracting power, a fourth lens group G4 with negative refracting power, a fifth lens group G5 with positive refracting power, and a sixth lens group G6 with positive refracting power in the named order from the side of reticle R as the first object, which is approximately telecentric on the object side (or on the reticle R side) and on the image side (or on the wafer W side) and which has a reduction magnification.

The projection optical systems of the respective embodiments shown in FIG. 3 to FIG. 8 are arranged so that the object-image distance (a distance from the object plane to the image plane or a distance from the reticle R to the wafer W) L is 1200, the image-side numerical aperture NA is 0.55, the projection magnification B is 5:1, and the diameter of the exposure area on the wafer W is 31.2. In the explanation of embodiments of the present invention, the image plane means a main surface of the wafer W, and the object plane means a surface of the reticle R.

The lens makeup of the first embodiment, as shown in FIG. 3, is specifically described. The first lens group G1 has a positive lens L11 with a convex surface to the image (positive meniscus lens), a negative lens L12 of a meniscus shape with a convex surface to the object, and two positive lenses (L13, L14) of a double-convex shape in the named order from the object side.

Next, the second lens group G2 is composed of a negative meniscus lens (front lens) L2F placed as closest to the object with a concave surface to the image, a negative meniscus lens (rear lens) L2F placed closest to the image with a concave surface to the object, and an intermediate lens group G2M placed between the negative meniscus lens L2F located closest to the object in the second lens group G2 and the negative meniscus lens L2R located closest to the image in the second lens group G2, and having negative refracting power.

The intermediate lens group G2M is composed of a positive lens (first lens) LV31 of a double-convex shape, a negative lens (second lens) LM2 with a surface of a greater curvature to the image, a negative lens (third lens) LM3 of a double-concave shape, a negative lens (fourth lens) LM4 with a surface of a greater curvature to the object, and a positive lens (fifth lens) LM5 with a surface of a greater curvature to the image in the named order from the object side.

Further, the third lens group G3 is composed of a positive lens (positive meniscus lens) L31 with a surface of a greater curvature to the image, a positive lens L32 of a double-convex shape, a positive lens (a positive lens of a double-convex shape) L33 with a convex surface to the object, and a positive lens L34 with a surface of a greater curvature to the object, and the fourth lens group G4 is composed of a negative lens (negative meniscus lens) L41 with a concave surface to the image, a negative meniscus lens L42 with a concave surface to the image, a negative lens L43 of a double concave surface, and a negative meniscus lens L44 with a concave surface to the object.

Here, an aperture stop AS is set in an optical path between the image-side concave surface of the negative lens L41 in the fourth lens group G4 and the object-side concave surface of the negative meniscus lens L44.

The fifth lens group G5 is composed of a positive meniscus lens L51 with a convex surface to the image, a positive lens with a surface of a greater curvature to the image (a positive lens of a double-convex shape) L52, a positive lens L33 of a double-convex shape, a negative meniscus lens L34 with a concave surface to the object, a positive lens L55 with a surface of a greater curvature to the object, a positive meniscus lens L56 with a convex surface to the object, a positive lens with a surface of a greater curvature to the object (positive meniscus lens) L57, and a negative lens with a concave surface to the image (negative meniscus lens) L58, and the sixth lens group G6 is composed only of a thick-wall positive lens L61 with a convex surface to the object.

Here, because the first lens group G1 in the first embodiment is so arranged that the image-side lens surface of the negative lens L12 of the meniscus shape with its convex surface to the object and the object-side lens surface of the positive lens L13 of double-convex shape have nearly equal curvatures and are arranged as relatively close to each other, these two lens surfaces correct the higher-order distortions.

In the present embodiment, because the front lens L33 with negative refracting power, placed closest to the object in the second lens group G2, is of the meniscus shape with a concave surface to the image, the generation of coma can be reduced; because the first lens LM1 with positive refracting power in the second lens group G2M is of the double-convex shape with a convex surface to the image and another convex surface to the object, the generation of spherical aberration of the pupil can be suppressed. Further, because the fifth lens LM5 with positive refracting power in the intermediate lens group G2M has the convex surface opposed to the concave surface of the rear lens L2R with negative refracting power placed on the image side thereof, the astigmatism can be corrected.

Since the fourth lens group G4 is so arranged that the negative lens L41 with its concave surface to the image is placed on the object side of the negative lens (negative lens of double-concave shape) L43 and that the negative meniscus lens L44 with its concave surface to the object is placed on the image side of the negative lens (negative lens of double-concave shape) L43, the Petzval sum can be corrected while suppressing the generation of coma.

The present embodiment is so arranged that the aperture stop AS is placed between the image-side concave surface of the negative lens L41 and the object-side concave surface of the negative meniscus lens L44 in the fourth lens group G4 whereby the lens groups of from the third lens group G3 to the sixth lens group G6 can be arranged on either side of the aperture stop AS with some reduction magnification and without destroying the symmetry so much, which can suppress generation of asymmetric aberrations, specifically generation of coma or distortion.

Since the positive lens L53 in the fifth lens group G5 is of the double-convex shape where its convex surface is opposed to the negative meniscus lens L54 and the other lens surface opposite to the negative meniscus lens L54 is also a convex surface, the generation of higher-order spherical aberrations with an increase in NA can be suppressed.

The specific lens makeup of the projection optical system in the second embodiment as shown in FIG. 4 is similar to that of the first embodiment shown in FIG. 3 and described above but different in that the fourth lens group G4 is composed of a negative lens with a concave surface to the image (negative lens of a plano-concave shape) L41, a negative meniscus lens L42 with a concave surface to the image, a negative lens L43 of a double-concave shape, and a negative meniscus lens L44 with a concave surface to the object and in that the sixth lens group G6 is composed of a positive lens with a convex surface to the object (positive meniscus lens) L61, and a positive lens with a convex surface to the object (positive meniscus lens) L62.

Also in the second embodiment, the image-side lens surface of the negative meniscus lens L12 with its convex surface to the object and the object-side lens surface of the positive lens L13 of double-convex shape correct the higher-order distortions, similarly as in the above first embodiment. Further, the sixth lens group G6 is preferably composed of a less number of constituent lenses in order to suppress a distortion generated by the sixth lens group G6, but if it is difficult to produce a thick lens the sixth lens group G6 may be composed of two lenses as in the present embodiment. As for the other lens groups (the second lens group G1 to the fifth lens group G5) in the second embodiment, the same functions as in the first embodiment are achieved thereby.

The specific lens makeup of the projection optical system of the third embodiment as shown in FIG. 5 is similar to that of the first embodiment shown in FIG. 3 and described previously, but different in that the first lens group G1 is composed of a positive lens with a convex surface to the image (positive lens of double-convex shape) L11, a positive lens with a convex surface to the image (positive lens of double-convex shape) L12, a negative meniscus lens L13 with a concave surface to the object, and a positive lens L14 of double-convex shape in the named order from the object side and in that the third lens group G3 is composed of a positive lens with a surface of a greater curvature to the image (positive meniscus lens) L31, a positive lens L32 of double-convex shape, a positive lens with a surface of a greater curvature to the object (positive lens of double-convex shape) L33, and a positive lens with a convex surface to the object (positive meniscus lens) L34.

In the third embodiment, the image-side lens surface of the positive lens L12 with its convex surface to the image and the object-side lens surface of the negative meniscus lens L13 with its concave surface to the object correct the higher-order distortions. As for the other lens groups (the second lens group G2, and the fourth lens group G4 to the sixth lens group G6) in the third embodiment, the same functions as in the first embodiment are achieved thereby.

The specific lens makeup of the projection optical system of the fourth embodiment as shown in FIG. 6 is similar to that of the third embodiment shown in FIG. 5 and described above, but different in that the third lens group G3 is composed of a positive lens with a surface of a greater curvature to the image side (positive meniscus lens) L31, a positive lens L32 of double-convex shape, a positive lens with a convex surface to the object (positive lens of double-convex shape) L33, and a positive lens with a surface of a greater curvature to the object (positive lens of double-convex shape) L34, and in that the fourth lens group G4 is composed of a negative lens with a concave surface to the image (negative lens of double-concave shape) L41, a negative meniscus lens L42 with a concave surface to the image, a negative lens L43 of double-concave shape, and a negative meniscus lens L44 with a concave surface to the object. The present embodiment is also different in that the sixth lens group G6 is composed of a positive lens with a convex surface to the object (positive meniscus lens) L61 and a positive lens with a convex surface to the object (positive meniscus lens) L62.

The first lens group G1 in the fourth embodiment achieves the same functions as in the third embodiment described previously, the second lens group G2 to the fifth lens group G5 do the same functions as in the first embodiment, and the sixth lens group G6 does the same functions as in the second embodiment.

The specific lens makeup of the projection optical system of the fifth embodiment shown in FIG. 7 is similar to that of the first embodiment shown in FIG. 3 and described previously, but different in that the first lens group G1 is composed of a positive lens with a convex surface to the image (positive lens of double-convex shape) L11, a negative lens with a concave surface to the image (negative lens of double-concave shape) L12 and two positive lenses (L13, L14) of double-convex shape in the named order from the object side. It is also different in that the third lens group G3 is composed of a positive lens with a surface of a greater curvature to the image (positive meniscus lens) L31, a positive lens L32 of double-convex shape, a positive lens with a convex surface to the object (positive meniscus lens) L33, and a positive lens with a surface of a greater curvature to the object (positive lens of double-convex shape) L34. It is also different from the lens makeup of the first embodiment in that the fourth lens group G4 is composed of a negative lens with a concave surface to the image (negative lens of double-concave shape) L41, a negative meniscus lens L42 with a concave surface to the image, a negative lens L43 of double-concave shape, and a negative meniscus lens L44 with a concave surface to the object. It is further different in that the fifth lens group G5 is composed of a positive meniscus lens L51 with a convex surface to the image, a positive lens with a surface of a greater curvature to the image (positive meniscus lens) L52, a positive lens L53 of double-convex shape, a negative meniscus lens L54 with a concave surface to the object, a positive lens with a surface of a greater curvature to the object (positive meniscus lens) L55, a positive meniscus lens L56 with a convex surface to the object, a positive lens with a surface of a greater curvature to the object (positive meniscus lens) L57, and a negative lens with a concave surface to the image (negative meniscus lens) L58.

In the fifth embodiment the higher-order distortions are corrected by a pair of the image-side convex surface of the positive lens L11 and the object-side concave surface of the negative lens L12 and a pair of the image-side concave surface of the negative lens L12 and the object-side convex surface of the positive lens L13. As for the other lens groups (the second to the fifth lens groups G2 to G5) in the fifth embodiment, the same functions as in the first embodiment are achieved thereby.

The sixth embodiment shown in FIG. 8 has the same lens makeup as that of the fifth embodiment as described above, and achieves the substantially same functions as in the fifth embodiment.

Now, Table 1 to Table 12 listed below indicate values of specifications and numerical values corresponding to the conditions in the respective embodiments according to the present invention.

In the tables, left end numerals represent lens surfaces located in the named order from the object side (reticle side), r curvature radii of lens surfaces, d lens surface separations, n refractive indices of synthetic quartz SiO2 for the exposure wavelength λ of 248.4 nm, d0 a distance from the first object (reticle) to the lens surface (first lens surface) closest to the object (reticle) in the first lens group G1, Bf a distance from the lens surface closest to the image (wafer) in the sixth lens group G6 to the image plane (wafer surface), B a projection magnification of the projection optical system, NA the image-side numerical aperture of the projection optical system, L the object-image distance from the object plane (reticle surface) to the image plane (wafer surface), I the axial distance from the first object (reticle) to the first-object-side focal point of the entire projection optical system (where the first-object-side focal point of the entire projection optical system means an intersecting point of exit light with the optical axis after collimated light beams in the paraxial region with respect to the optical axis of the projection optical system are let to enter the projection optical system on the second object side and when the light beams in the paraxial region are outgoing from the projection optical system), f1 the focal length of the first lens group G1, f2 the focal length of the second lens group G2, f3 the focal length of the third lens group G3, f4 the focal length of the fourth lens group G4, f5 the focal length of the fifth lens group G5, f6 the focal length of the sixth lens group G6, fn the overall focal length of from the second lens to the fourth lens, f2F the focal length of the front lens placed closest to the first object in the second lens group and having negative refracting power with its concave surface to the second object, f2R the focal length of the rear lens placed closest to the second object in the second lens group and having negative refracting power with its concave surface to the first object, f21 the focal length of the first lens with positive refracting power in the intermediate tens group in the second lens group, f22 the focal length of the second lens with negative refracting power in the second lens group, f23 the focal length of the third lens with negative refracting power in the second lens group, f24 the focal length of the fourth lens with negative refracting power in the second lens group, Φ21 the refracting power of the second-object-side lens surface of the first lens with positive refracting power in the intermediate lens group G21 in the second lens group, D the axial distance from the second-object-side lens surface of the fourth lens in the intermediate lens group in the second lens group to the first-object-side lens surface of the rear lens in the second lens group, r5n the curvature radius of the concave surface in the negative meniscus lens in the fifth lens group, r5p the curvature radius of the convex surface opposed to the concave surface of the negative meniscus lens, in the positive lens placed adjacent to the concave surface of the negative meniscus lens in the fifth lens group, f4F the first-object-side curvature radius in the rear lens placed closest to the second object in the fourth lens group, r4R the second-object-side curvature radius in the rear lens placed closest to the second object in the fourth lens group, r5F the first-object-side curvature radius in the second lens placed closest to the second object in the fifth lens group, r5R the second-object-aide curvature radius of the negative lens placed closest to the second object in the fifth lens group, r6F the first-object-side curvature radius of the lens placed closest to the first object in the sixth lens group, d56 the lens group separation between the fifth lens group and the sixth lens group, d6 the axial distance from the lens surface closest to the first object in the sixth lens group to the second object, and φ the refracting power of the lens surface of the lens or lenses forming the sixth lens group.

TABLE 1
First Embodiment
do = 105.33208
B = 1/5
NA = 0.55
Bf = 28.62263
L = 1200
r d n
1 −821.91920 23.00000 1.50839
2 −391.93385 20.81278
3 334.30413 20.00000 1.50839
4 239.01947 7.92536
5 267.66514 28.00000 1.50839
6 −618.41676 1.04750
7 337.90351 23.00000 1.50839
8 −1279.67000 0.97572
9 200.03116 24.00000 1.50839
10 105.22457 22.04713
11 219.65515 26.00000 1.50839
12 −546.12474 1.10686
13 4788.40002 17.00000 1.50839
14 125.70412 20.76700
15 −381.52610 12.90000 1.50839
16 134.36400 26.88549
17 −127.38724 15.00000 1.50839
18 433.13808 52.33906
19 1260.83000 35.00000 1.50839
20 −178.61526 14.91509
21 −129.71674 22.80000 1.50839
22 −202.88016 2.79782
23 −4128.12000 27.00000 1.50839
24 −299.28737 2.87255
25 556.52963 28.00000 1.50839
26 −928.16848 2.49780
27 367.82207 30.00000 1.50839
28 −4438.51001 1.64701
29 220.29374 31.00000 1.50839
30 −1698.69000 3.60527
31 4987.07001 21.00000 1.50839
32 146.02635 11.76890
33 216.75649 17.00000 1.50839
34 161.01290 31.54706
35 −206.90673 15.90000 1.50839
36 309.12541 56.09046
37 −183.11187 18.00000 1.50839
38 −894.17440 6.28784
39 −409.02115 23.00000 1.50839
40 −215.49999 1.14438
41 3139.57999 23.00000 1.50839
42 −320.84882 2.92283
43 445.47649 38.00000 1.50839
44 −348.37380 11.43498
45 −229.01731 27.00000 1.50839
46 −352.88961 1.10071
47 370.91242 25.00000 1.50839
48 −3446.41000 4.83032
49 178.35450 32.00000 1.50839
50 471.60399 3.29194
51 137.85195 39.90000 1.50839
52 331.09797 9.82671
53 520.77561 23.00000 1.50839
54 80.26937 7.04896
55 90.74309 71.00000 1.50839
56 1836.49001

TABLE 2
Values corresponding to the Conditions in the First Embodiment
(1) f1/f3 = 1.47
(2) f2f4 = 1.31
(3) f5/L = 0.0988
(4) f6/L = 0.154
(5) fn/>f2 = 0.589
(6) I/L = 2.33
(7) f21/f23 = 0.990
(8) f22/f23 = 1.31
(9) D/L = 0.0852
(10) f1/L = −0.0638
(11) f2/L = −0.0834
(12) (r5p − r5n)/(r5p + r5n) = 0.207
(13) (r1F − r1R)/(r4F + r4R) = −0.660
(14) (r5R − r6F)/(r5R + r6F) = −0.0613
(15) d56/L = 0.00587
(16) d6/r6F = 1.10
(17) (r5F − r5R)/(r5F + r5R) = 0.733
(18) 1/(φ21 · L) = 0.895
(19) f21/L = 0.260
(20) f2F/f2R = 0.604

TABLE 3
Second Embodiment
do = 103.54346
B = 1/5
NA = 0.55
Bf = 29.06029
L = 1200
r d n
1 −2191.4599 23.00000 1.50839
2 −443.19378 18.81278
3 372.47246 20.00000 1.50839
4 259.89086 7.92536
5 296.05557 26.00000 1.50839
6 −527.24081 1.04750
7 478.04893 27.00000 1.50839
8 −948.34609 0.97572
9 210.20717 24.00000 1.50839
10 107.85292 24.04713
11 241.18600 26.00000 1.50839
12 −438.52759 1.10686
13 −1434.49001 17.00000 1.50839
14 132.17373 18.76700
15 −370.22109 12.90000 1.50839
16 137.36441 26.88549
17 −131.18161 15.00000 1.50839
18 450.35044 53.03407
19 1459.21001 35.00000 1.50839
20 −182.99101 14.91509
21 −132.88561 22.80000 1.50839
22 −199.28914 2.79782
23 −5536.72998 27.00000 1.50839
24 −310.674563 2.87255
25 528.12523 28.00000 1.50839
26 −1200.55000 2.49780
27 320.15215 30.00000 1.50839
28 −2820.19000 1.64701
29 239.46093 31.00000 1.50839
30 −2425.69000 5.60527
31 21.00000 1.50839
32 148.13116 9.76890
33 207.41773 17.00000 1.50839
34 155.42831 31.54706
35 −218.29971 15.90000 1.50839
36 304.21175 56.74759
37 −175.66635 18.00000 1.50839
38 −1130.86000 6.28784
39 −485.73656 23.00000 1.50839
40 −216.43349 1.14438
41 2806.14999 23.00000 1.50839
42 −316.00620 2.92283
43 437.43410 38.00000 1.50839
44 −355.32964 11.43498
45 −235.73758 27.00000 1.50839
46 −360.50104 1.10071
47 410.57953 25.00000 1.50839
48 −3698.22000 4.83032
49 178.15299 32.00000 1.50839
50 506.53177 3.29194
51 137.46544 39.90000 1.50839
52 328.51597 9.82671
53 544.32105 23.00000 1.50839
54 81.70638 7.04896
55 92.81520 34.00000 1.50839
56 511.57718 2.00000
57 482.15006 35.00000 1.50839
58 1631.30000

TABLE 4
Values corresponding to the Conditions in the Second Embodiment
(1) f1/f3 = 1.50
(2) f2/f4 = 1.39
(3) f5/L = 0.0971
(4) f6/L = 0.158
(5) fn/>f2 = 0.568
(6) I/L = 2.21
(7) f21/f23 = 1.01
(8) f22/f23 = 1.21
(9) D/L = 0.0858
(10) f4/L = −0.0621
(11) f2/L = −0.0861
(12) (r5p − r5n)/(r5p + r5n) = 0.202
(13) (r4F − r4R)/(r4F + r4R) = −0.731
(14) (r5R − r6F)/(r5R + r6F) = −0.0637
(15) d56/L = 0.00587
(16) d6/r6F =1.08
(17) (r5F − r5R)/(r5F + r5R) = 0.739
(18) 1/(φ21 · L) = 0.719
(19) f21 /L = 0.239
(20) f2F/f2R = 0.533

TABLE 5
Third Embodiment
do = 104.69561
B = 1/5
NA = 0.55
Bf = 29.13809
L = 1200
r d n
1 −1364.36000 23.00000 1.50839
2 −612.17411 20.81278
3 699.63988 24.00000 1.50839
4 −301.81026 7.92536
5 −248.00150 20.00000 1.50839
6 −614.52792 1.04750
7 332.05244 27.00000 1.50839
8 −582.52759 0.97572
9 232.12759 24.00000 1.50839
10 110.33434 27.04713
11 230.79590 23.00000 1.50839
12 −359.85171 1.10686
13 −1275.75999 17.00000 1.50839
14 127.98361 18.76700
15 −569.83204 12.90000 1.50839
16 140.20359 26.88549
17 −108.76770 15.00000 1.50839
18 593.61218 51.86789
19 2324.85999 35.00000 1.50839
20 −163.53564 14.91509
21 −121.26603 22.80000 1.50839
22 −192.12364 2.79782
23 −4480.40997 27.00000 1.50839
24 −297.83388 2.87255
25 445.50685 28.00000 1.50839
26 −877.28296 2.49780
27 422.96766 27.00000 1.50839
28 −1570.03000 1.64701
29 230.95785 31.00000 1.50839
30 3000.00000 8.60527
31 1800.00000 21.00000 1.50839
32 138.38357 9.76890
33 191.56081 17.00000 1.50839
34 157.70119 31.54706
35 −217.22866 15.90000 1.50839
36 294.71194 56.69427
37 −173.19975 18.00000 1.50839
38 −973.64548 6.28784
39 −467.87775 23.00000 1.50839
40 −215.12034 1.14438
41 2688.16000 23.00000 1.50839
42 −320.45010 2.92283
43 441.22198 40.00000 1.50839
44 −347.09282 9.43495
45 −239.46132 27.00000 1.50839
46 −386.98159 1.10071
47 381.41679 28.00000 1.50839
48 −2576.25000 4.83032
49 186.44642 29.00000 1.50839
50 570.80649 3.29194
51 138.75412 39.90000 1.50839
52 316.26440 9.82671
53 504.37073 23.00000 1.50839
54 80.26770 7.04896
55 91.17058 71.00000 1.50839
56 1553.61000

TABLE 6
Values corresponding to the Conditions in the Third Embodiment
(1) f1/f3 = 1.46
(2) f2/f4 = 1.27
(3) f5/L = 0.0977
(4) f6/L = 0.156
(5) fn/>f2 = 0.591
(6) I/L = 2.93
(7) f21/f23 = 0.816
(8) f22/f23 = 1.04
(9) D/L = 0.0848
(10) f4/L = −0.0645
(11) f2/L = −0.0816
(12) (r5p − r5n)/(r5p + r5n) = 0.184
(13) (r4F − r4R)/(r4F + r4R) = −0.698
(14) (r5R − r6F)/(r5R + r6F) = −0.0636
(15) d56/L = 0.00587
(16) d6/r6F =1.10
(17) (r5F − r5R)/(r5F + r5R) = 0.725
(18) 1/(φ21 · L) = 0.590
(19) f21 /L = 0.234
(20) f2F/f2R = 0.611

TABLE 7
Fourth Embodiment
do = 104.71662
B = 1/5
NA = 0.55
Bf = 28.76320
L = 1200
r d n
1 955.26796 23.00000 1.50839
2 −675.53148 20.81278
3 788.04209 24.00000 1.50839
4 −320.77870 7.92536
5 −261.99847 20.00000 1.50839
6 −613.40707 1.04750
7 343.77433 27.00000 1.50839
8 −614.74297 0.97572
9 220.40014 24.00000 1.50839
10 111.87626 27.04713
11 230.00000 23.00000 1.50839
12 −410.00000 1.10686
13 −2449.05000 17.00000 1.50839
14 118.87129 18.76700
15 −632.77988 12.90000 1.50839
16 143.15226 26.88549
17 −108.88557 15.00000 1.50839
18 595.22400 52.22565
19 1526.21000 35.00000 1.50839
20 −168.52598 14.91509
21 −120.87196 22.80000 1.50839
22 −188.10351 2.79782
23 −3191.22000 27.00000 1.50839
24 −296.62706 2.87255
25 697.45117 28.00000 1.50839
26 −699.27158 2.49780
27 358.82454 27.00000 1.50839
28 −2986.21000 1.64701
29 223.50971 31.00000 1.50839
30 −1510.16000 8.60527
31 −3596.81000 21.00000 1.50839
32 141.11696 9.76890
33 194.35300 17.00000 1.50839
34 157.66411 31.54706
35 −209.96142 15.90000 1.50839
36 307.10883 56.68624
37 −175.13115 18.00000 1.50839
38 −1162.95000 6.28784
39 −505.38166 23.00000 1.50839
40 −213.39177 1.14438
41 3114.45000 23.00000 1.50839
42 −339.03822 2.92283
43 460.54759 40.00000 1.50839
44 −326.27369 9.43498
45 −231.89968 27.00000 1.50839
46 −372.57441 1.10071
47 390.03678 28.00000 1.50839
48 −1994.66000 4.83032
49 182.18377 29.00000 1.50839
50 525.45378 3.29194
51 138.67730 39.90000 1.50839
52 312.43609 9.82671
53 511.48346 23.00000 1.50839
54 81.45867 7.04896
55 93.64185 34.00000 1.50839
56 934.34560 2.00000
57 826.70065 35.00000 1.50839
58 1680.21000 (Bf)

TABLE 8
Values corresponding to the Conditions in the Fourth Embodiment
(1) f1/f3 = 1.55
(2) f2/f4 = 1.39
(3) f5/L = 0.0975
(4) f6/L = 0.158
(5) fn/>f2 = 0.576
(6) I/L = 3.05
(7) f24/f23 = 0.787
(8) f22/f23 = 0.974
(9) D/L = 0.0851
(10) f4/L = −0.0606
(11) f2/L = −0.0843
(12) (r5p − r5n)/(r5p + r5n) = 0.169
(13) (r4F − r4R)/(r4F + r4R) = −0.738
(14) (r5R − r6F)/(r5R + r6F) = −0.0695
(15) d56/L = 0.00587
(16) d6/r6F =1.07
(17) (r5F − r5R)/(r5F + r5R) = 0.725
(18) 1/(φ21 · L) = 0.672
(19) f21 /L = 0.244
(20) f2F/f2R = 0.642

TABLE 9
Fifth Embodiment
do = 105.99385
B = 1/5
NA = 0.55
Bf = 28.96856
L = 1200
r d n
1 723.32335 28.00000 1.50839
2 −571.27029 2.00000
3 −8470.94995 20.00000 1.50839
4 324.13159 7.92536
5 360.44110 28.00000 1.50839
6 −432.97069 1.04750
7 397.04484 27.00000 1.50839
8 −825.96923 0.97572
9 214.74004 31.00000 1.50839
10 110.51892 24.04713
11 229.41181 26.00000 1.50839
12 −396.52854 1.10686
13 −1014.34000 17.00000 1.50839
14 137.90605 18.76700
15 −418.55207 12.90000 1.50839
16 138.89479 26.88549
17 −133.71351 15.00000 1.50839
18 561.35918 52.53782
19 1381.31000 35.00000 1.50839
20 −188.69074 14.91509
21 −134.03345 22.80000 1.50839
22 −198.69180 2.79782
23 −3029.37000 27.00000 1.50839
24 −333.96362 2.87255
25 905.53484 28.00000 1.50839
26 −611.80005 2.49780
27 254.70879 30.00000 1.50839
28 3936.53000 1.64701
29 239.51669 31.00000 1.50839
30 −1238.94000 5.60527
31 −2379.42001 21.00000 1.50839
32 150.43068 9.76890
33 209.21387 17.00000 1.50839
34 149.67785 31.54706
35 −199.55198 15.90000 1.50839
36 341.76300 57.70880
37 −170.75300 18.00000 1.50839
38 −3700.60999 6.28784
39 −1025.75000 23.00000 1.50839
40 −212.37919 1.14438
41 −3009.97000 23.00000 1.50839
42 −312.33647 2.92283
43 401.05778 37.00000 1.50839
44 −361.42967 12.43498
45 −231.63315 27.00000 1.50839
46 −319.48896 1.10071
47 355.64919 25.00000 1.50839
48 3678.53000 4.83032
49 177.43364 32.00000 1.50839
50 553.83964 3.29194
51 137.68248 39.90000 1.50839
52 330.86342 9.82671
53 587.42747 23.00000 1.50839
54 81.23164 7.04896
55 93.74477 71.00000 1.50839
56 1555.42999

TABLE 10
Values corresponding to the Conditions in the Fifth Embodiment
(1) f1/f3 = 1.58
(2) f2/f4 = 1.63
(3) f5/L = 0.0923
(4) f6/L = 0.161
(5) fn/>f2 = 0.554
(6) I/L = 2.27
(7) f24/f23 = 1.04
(8) f22/f23 = 1.17
(9) D/L = 0.0853
(10) f4/L = −0.0564
(11) f2/L = −0.0919
(12) (r5p − r5n)/(r5p + r5n) = 0.219
(13) (r4F − r4R)/(r4F + r4R) = −0.912
(14) (r5R − r6F)/(r5R + r6F) = −0.0715
(15) d56/L = 0.00587
(16) d6/r6F =1.07
(17) (r5F − r5R)/(r5F + r5R) = 0.757
(18) 1/(φ21 · L) = 0.650
(19) f21 /L = 0.242
(20) f2F/f2R = 0.541

TABLE 11
Sixth Embodiment
do = 105.91377
B = 1/5
NA = 0.55
Bf = 28.96856
L = 1200
r d n
1 723.70616 28.00000 1.50839
2 −571.49375 1.98414
3 −8427.42000 20.00000 1.50839
4 324.06902 8.06076
5 360.49965 28.00000 1.50839
6 −432.97519 1.01484
7 397.09644 27.00000 1.50839
8 −826.03537 0.88781
9 214.74356 31.00000 1.50839
10 110.51666 24.03750
11 229.41181 26.00000 1.50839
12 −396.60684 1.12963
13 −1014.38000 17.00000 1.50839
14 137.92108 18.76756
15 −418.59453 12.90000 1.50839
16 138.90550 26.88587
17 −133.71351 15.00000 1.50839
18 561.20342 52.51989
19 1381.31000 35.00000 1.50839
20 −188.68876 14.85490
21 −134.03581 22.80000 1.50839
22 −198.68592 2.89585
23 −3029.37000 27.00000 1.50839
24 −333.96362 2.88769
25 905.64444 28.00000 1.50839
26 −611.80428 2.47699
27 254.70879 30.00000 1.50839
28 3936.53000 1.61920
29 239.51669 31.00000 1.50839
30 −1238.94000 5.60156
31 −2379.42000 21.00000 1.50839
32 150.42879 9.73510
33 209.20275 16.99160 1.50839
34 149.68297 31.54706
35 −199.55198 15.90229 1.50839
36 341.76300 57.70389
37 −170.75300 18.00000 1.50839
38 −3700.61000 6.28293
39 −1025.75000 23.00000 1.50839
40 −212.37919 1.14438
41 −3009.97000 23.00000 1.50839
42 −312.33647 2.89661
43 401.05778 37.00000 1.50839
44 −361.42967 12.47918
45 −231.65257 27.00000 1.50839
46 −319.51171 1.23912
47 355.64919 25.00000 1.50839
48 3678.53000 4.82925
49 177.43453 32.00000 1.50839
50 553.98339 3.26768
51 137.68248 39.90000 1.50839
52 330.86342 9.82671
53 587.42747 23.00000 1.50839
54 81.23164 7.04896
55 93.74477 71.00000 1.50839
56 1555.43000 (Bf)

TABLE 12
Values corresponding to the Conditions the Sixth Embodiment
(1) f1/f3 = 1.58
(2) f2/f4 = 1.63
(3) f5/L = 0.0924
(4) f6/L = 0.161
(5) f7/f9 = 0.554
(6) I/L = 2.25
(7) f24/f23 = 1.04
(8) f22/f23 = 1.17
(9) D/L = 0.0853
(10) f1/L = −0.0564
(11) f2/L = −0.0919
(12) (r5p − r5n)/(r5p + r5n) = 0.218
(13) (r4F − r4R)/(r4F + r4R) = −0.911
(14) (r5R − r6F)/(r5R + r6F) = −0.0715
(15) d56/L = 0.00587
(16) d6/r6F = 1.07
(17) (r5F − r5R)/(r5F + r 5R) = 0.757
(18) 1/(φ21 · L) = 0.650
(19) f21/L = 0.242
(20) f2F/f2R = 0.541

In the above-described first embodiment, 1/|φL|=0.149 for the object-side lens surface of the positive lens L61, thus satisfying the condition (21). In the second embodiment, 1/|φL|=0.152 for the object-side lens surface of the positive lens L61 and 1/|φL|=0.709 for the object-side lens surface of the positive lens L62, thus satisfying the condition (21). In the third embodiment, 1/|φL|=0.149 for the object-side lens surface of the positive lens L61 thus satisfying the condition (21). In the fourth embodiment, 1/|φL|=0.153 for the object-side lens surface of the positive lens L61 and 1/|φL|=1.36 for the object-side lens surface of the positive lens L62, thus satisfying the condition (21). In the fifth embodiment, 1/|φL|=0.153 for the object-side lens surface of the positive lens L61, thus satisfying the condition (21). In the sixth embodiment, 1/|φL|=0.154 for the object-side lens surface of the positive lens L61 thus satisfying the condition (21). Therefore, the sixth lens group G6 in each embodiment is composed of three or less lenses having the lens surface(s) satisfying the condition (21).

From the above values of specifications for the respective embodiments, it is understood that the telecentricity is achieved on the object side (on the reticle side) and on the image side (on the wafer side) while maintaining a relatively wide exposure area and a large numerical aperture in each embodiment.

FIG. 9, FIG. 10, FIG. 11, FIG. 12, FIG. 13, and FIG. 14 show aberration diagrams of various aberrations in the first to the sixth embodiments according to the present invention.

Here, in each aberration diagram, NA represents the numerical aperture of the projection optical system and Y the image height. In each aberration diagram of astigmatism, the dotted line represents a meridional image surface (meridional image surface) and the solid line a sagittal image surface (sagittal image surface).

From the comparison of the aberration diagrams, it is seen that the various aberrations are corrected in a good balance in each embodiment, particularly the distortion is corrected very well over the entire image up to a nearly zero state and the high-resolving-power projection optical system is achieved with a large numerical aperture.

Although the above embodiments showed the examples where the excimer laser for supplying the light of 248.4 nm was used as a light source, it is needless to mention that, without a need to be limited to the examples, the present invention can be applied to systems using extreme ultraviolet light sources such as an excimer laser for supplying the light of 193 nm, mercury arc lamps for supplying the light of the g-line (436 nm) or the i-line (365 nm), or light sources for supplying the light in the ultraviolet region other than those.

In the embodiments neither of the lenses constituting the projection optical system is a compound lens, and either of them is made of a single optical material, i.e., of quartz (SiO2). Here, a cost reduction can be achieved because a single optical material forms each lens in the above embodiments. However, if the exposure light has a certain half width, a chromatic aberration can be corrected by a combination of quartz (SiO2) and fluorite (CaF2) or by a combination of other optical materials. Further, if the exposure light source supplies the exposure light in a wide band, the chromatic aberration can be corrected by a combination of plural types of optical materials.

As described above, the exposure apparatus relating to the present invention has achieved the projection optical systems which are bitelecentric optical systems with a relatively wide exposure area kept and which are high-resolving-power projection optical systems in which the various aberrations are corrected in a good balance and which have a large numerical aperture. Particularly, the distortion is corrected very well in the projection optical systems of the present invention. Accordingly, the present invention can enjoy an extreme reduction of image stress, because the distortion is also corrected very well in addition to the achievement of the bitelecentricity.

From the invention thus described, it will be obvious that the invention may be varied in many way. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.

The basic Japanese Application No. 6-311050 (311050/1994) filed on Dec. 14, 1994 is hereby incorporated by reference.

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US3737215Apr 6, 1972Jun 5, 1973Eastman Kodak CoSix element unit magnification lens
US3909115Dec 20, 1973Sep 30, 1975Canon KkLens with high resolving power but relatively small reduction ratio
US3955883Feb 6, 1975May 11, 1976Asahi Kogaku Kogyo Kabushiki KaishaWide angle photographic lens
US4080048Oct 12, 1976Mar 21, 1978Olympus Optical Co., Ltd.Ultra-high resolution reducing lens system
US4666273Mar 25, 1986May 19, 1987Nippon Kogaku K. K.Automatic magnification correcting system in a projection optical apparatus
US4770477Dec 4, 1986Sep 13, 1988The Perkin-Elmer CorporationLens usable in the ultraviolet
US4772107Nov 5, 1986Sep 20, 1988The Perkin-Elmer CorporationWide angle lens with improved flat field characteristics
US4811055Jun 24, 1988Mar 7, 1989Canon Kabushiki KaishaProjection exposure apparatus
US4891663Jun 24, 1988Jan 2, 1990Canon Kabushiki KaishaProjection exposure apparatus
US4977426Jun 24, 1988Dec 11, 1990Canon Kabushiki KaishaProjection exposure apparatus
US5097291Apr 22, 1991Mar 17, 1992Nikon CorporationEnergy amount control device
US5105075Jul 8, 1991Apr 14, 1992Canon Kabushiki KaishaProjection exposure apparatus
US5159496Mar 22, 1991Oct 27, 1992Dainippon Screen Mfg. Co., Ltd.Lens system with four meniscus lenses made of anomalous dispersion glass
US5170207Dec 12, 1991Dec 8, 1992Olympus Optical Co., Ltd.Projection lens system
US5194893Mar 3, 1992Mar 16, 1993Nikon CorporationExposure method and projection exposure apparatus
US5235465Apr 24, 1991Aug 10, 1993Dainippon Screen Mfg. Co., Ltd.Objective lens system for use within microscope
US5245384Jun 16, 1992Sep 14, 1993Nikon CorporationIlluminating optical apparatus and exposure apparatus having the same
US5247324Dec 13, 1991Sep 21, 1993Eastman Kodak CompanyReal image zoom viewfinder
US5260832Oct 22, 1991Nov 9, 1993Olympus Optical Co., Ltd.Projection lens system
US5493402Apr 17, 1995Feb 20, 1996Nikon CorporationEGA alignment method using a plurality of weighting coefficients
US5506684Jun 7, 1995Apr 9, 1996Nikon CorporationProjection scanning exposure apparatus with synchronous mask/wafer alignment system
US5534970Jun 7, 1994Jul 9, 1996Nikon CorporationScanning exposure apparatus
US5636000Jun 27, 1995Jun 3, 1997Nikon CorporationProjection optical system and projection exposure apparatus using the same
US5781278Jul 28, 1997Jul 14, 1998Nikon CorporationProjection optical system and exposure apparatus with the same
US5805344Oct 11, 1996Sep 8, 1998Nikon CorporationProjection optical system and projection exposure apparatus
US5831770Mar 24, 1997Nov 3, 1998Nikon CorporationProjection optical system and exposure apparatus provided therewith
US5835285Jun 30, 1997Nov 10, 1998Nikon CorporationProjection optical system and exposure apparatus using the same
US5856884Sep 5, 1997Jan 5, 1999Nikon CorporationProjection lens systems
US5943172Sep 11, 1997Aug 24, 1999Nikon CorporationProjection optical system and projection exposure apparatus
USRE37846 *Nov 13, 2000Sep 17, 2002Nikon CorporationProjection optical system and exposure apparatus using the same
DE3443856A1Nov 30, 1984Jun 13, 1985Nippon Kogaku KkOptisches projektionsgeraet
JPH04157412A Title not available
JPH05107469A Title not available
JPH05164962A Title not available
JPH05173065A Title not available
JPH06313845A Title not available
JPH06331941A Title not available
JPH06349701A Title not available
JPH07140385A Title not available
JPH08179204A Title not available
JPS584112A Title not available
JPS4735017A Title not available
JPS5512902A Title not available
JPS63118115A Title not available
SU1659951A1 Title not available
WO1993004391A1Aug 18, 1992Mar 4, 1993Eastman Kodak CoHigh aperture lens system and printer using the lens system
Non-Patent Citations
Reference
1Erhard Glatzel, "Zeiss-Inform", 26, 8-13 (1981) No. 92.
2Naumann, Schroder, "Bauelemente der Optik", 6<th >Ed. 1992 Munich, Vienna, pp. 379, 393.
3Naumann, Schroder, "Bauelemente der Optik", 6th Ed. 1992 Munich, Vienna, pp. 379, 393.
4Smith, Warren et al., "Modern Lens Design" ISBN 0-07-059178-4 McGraw-Hill, 1992, Chapter 3.3.
5SPIE, vol. 811 Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection (1987), "Quality of Microlithographic Projection Lenses", Joseph Braat, pp. 22-30.
6 *U.S. patent application Ser. No. 08/152,490, refiled as U.S. patent application Ser. No. 08/727,206, which was refiled as U.S. patent application Ser. No. 08/929,155; Apr. 23, 1999 which was allowed, but no issue date or patent number.*
7 *U.S. patent application Ser. No. 08/255,927, filed Jun. 7, 1994, Nakashima et al. U.S. Pat. No. 5,534,970, issue date Jul. 9, 1996.*
8W. Emmerich, Ch. Hofmann, "Jenaer Rundschau" Apr. 1986, pp. 193-196.
Classifications
U.S. Classification359/649, 359/757, 359/773, 359/679, 359/656, 359/658
International ClassificationG02B13/14, G03F7/20, G02B9/62, G02B13/24
Cooperative ClassificationG02B13/24, G02B9/62, G03F7/70241, G02B13/143
European ClassificationG03F7/70F6, G02B9/62, G02B13/24, G02B13/14B