|Publication number||USRE38937 E1|
|Application number||US 10/233,546|
|Publication date||Jan 24, 2006|
|Filing date||Sep 4, 2002|
|Priority date||Jul 27, 1998|
|Publication number||10233546, 233546, US RE38937 E1, US RE38937E1, US-E1-RE38937, USRE38937 E1, USRE38937E1|
|Original Assignee||Sumitomo Mitsubishi Silicon Corporation|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (10), Referenced by (5), Classifications (10), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of the Invention
The present invention relates to an improvement of a susceptor which is employed to a vapor-phase growth apparatus to grow an epitaxial film onto the semiconductor wafer. More specifically, the present invention relates directly to a vapor-phase growth apparatus in which a through-hole portion extending to a rear side of the susceptor is provided at the most outer peripheral portion inside the wafer pocket in order to mount the wafer, and a raise in dopant concentration at the outer periphery of the grown epitaxial film can be controlled.
2. Description of the Prior Art
As to a vapor-phase growth apparatus in order to grow an epitaxial film onto the semiconductor wafer, there have been several conventional types of apparatus available; they may include (1) a vertical-type vapor-phase growth apparatus in which the susceptor being placed on a circular disc is heated from its bottom side, and (2) a single wafer type vapor-phase growth apparatus with which a good quality epitaxial film can be fabricated.
For example, inside the rectangular chamber being fabricated of quartz in said single wafer type vapor-phase growth apparatus, semiconductor wafer is mounted on the disc-shaped susceptor which is a graphite being coated with SiC. The semiconductor wafer is heated using a heater which is provided outside of the chamber in order to react with various types of reacting source gases passing through the chamber, resulting in growing the epitaxial film on the semiconductor wafer.
As seen in
Moreover, several improvements have been proposed in order to minimize the surface contact between the inner surface of the pocket and the wafer rear surface. These proposed improvements may include (1) a structure to contact-hold the wafer to a plurality of convex portions by forming a mesh-shaped shallow fine groove so-called a roulette, (2) making a tapered surface in order to confine the contact of the wafer at its outer periphery, or (3) using much coarser surface roughness of coated SiC surface than the surface roughness of the wafer.
As to a reacting source gas, a dopant source gas such as diborane (P type) or phosphine (N type) is added to a chloro-silane gas which is hydrogen diluted. Hence the silicon epitaxy as well as a bi-product of HCl are produced on the wafer surface through a heat CVD (chemical vapor deposition) reaction. As a result, although the silicon epitaxial growth on the wafer surface can proceed, the rear surface of said wafer is also exposed to diffusion reaction gas to create a Si—H—Cl atmosphere, which might furthermore lead to a precipitation/etching reaction in a microscopic scale.
For instance when the epitaxial growth having lower concentration than the dopant concentration of the wafer is conducted such as an epitaxial growth of P type film (specific resistance is 1 Ωcm) against the wafer with the dopant concentration P ++ type (specific resistance is 5 mΩcm), the dopant concentration in the epitaxial layer tends to increase at the outer peripheral portion of the wafer, as demonstrated in
The above phenomenon might be due to the fact that the dopant species of the wafer 8 might be exhausted in Si—H—Cl atmosphere at the rear surface of wafer 8, and the exhausted dopant species might migrate to the front surface through the gaseous diffusion flow 11, resulting in increasing the dopant gaseous concentration locally. As a result, a particular region of the epitaxial layer where the dopant concentration is out of the range defined by the specification, leading to a poor production efficiency of the device.
Objective of the Invention
All of the forgoing have resulted in a requirement for improvement of the apparatus of the present invention in which it is an objective of the present invention to provide a susceptor which can prevent the increasing phenomenon of the dopant concentration in the epitaxial layer at its peripheral portion, as it would be obvious when the epitaxial growth proceeds at lower concentration than the dopant concentration of the wafer. It is, accordingly, another objective to provide a susceptor for the vapor-phase growth apparatus which can avoid the unwanted flow of the dopant species being exhausted at the rear side to the wafer surface.
Disclosure of the Invention
The present inventors found that, in a suscpetor for the vapor-phase growth apparatus, the aforementioned localized nonuniform distribution of the dopant concentration can be minimized by forming a vapor flow in order to prevent the unwanted flow of the dopant species being exhausted at the rear side to the wafer surface. After investigating various designs for the susceptor to achieve said objectives, the following design was evaluated to perform the best efficiency. By providing a through-hole passing through to the rear side at the outer peripheral portion of the wafer inside the wafer pocket, the down-flow from the upper surface of the susceptor is generated, so that the unwanted flow of the dopant species being exhausted toward the wafer surface can be prevented. As a result, the raise in the dopant concentration can be controlled at the outer peripheral portion of the epitaxial layer.
Namely, according to the present invention, a susceptor can be provided which is characterized by providing a through-hole passing through to the rear side at the most outer peripheral portion inside the wafer pocket which is a concave portion for mounting the wafer.
According to the present invention, the localized raise of the dopant concentration at the most outer peripheral portion of the grown epitaxial layer can be prevented by providing a through-hole passing through to the rear side of the susceptor at the outer periphery inside the wafer pocket which is used for mounting the wafer. Specifically, the raise in the dopant concentration in the epitaxial layer can be avoided when the epitaxial growth with a lower concentration than the dopant concentration of the wafer is progressing.
The above and many other objectives, features and advantages of the present invention will be more fully understood from the ensuing detailed description of the preferred embodiment of the invention, which description should be read in conjunction with the accompanying drawings.
A vapor-phase growth apparatus seen in
The susceptor 5 of the present invention has an arc-shaped groove-type through-hole portion 7 at the most outer peripheral portion inside the wafer pocket 6 for mounting the semiconductor wafer 8. The inner plain portion of the wafer pocket is a coated SiC layer.
Furthermore, by blowing the source gas directly toward the front surface of the wafer 8, the gas flow 12 passing from the front surface to the rear surface of the wafer 8 through the through-hole can be promoted, so that the growth efficiency can be enhanced. Moreover, by providing an exhaust opening 4 at the rear side of the susceptor 5 in the chamber 1, the gas flow passing from the front surface to the rear surface of the wafer 8 through the through-hole portion 7 can also be promoted, resulting in that the epitaxial growth efficiency can be improved.
In the above, although the single wafer type vapor-phase growth apparatus has been described, the type of the apparatus to which the present invention is applicable includes any prior art types including a vertical-type vapor-phase growth apparatus or a barrel-type vapor-phase growth apparatus. With any one of these types of growth apparatus, according to the present invention, the reacting source gas can flow in parallel to the wafer surface being placed in the susceptor.
The through-hole portion of the susceptor in this invention can be various types including an arc-shaped groove-type through-hole portion as mentioned previously, an ovalshaped through-hole portion, or a plurality of small size of holes. Moreover, with the single wafer type of vapor-phase growth apparatus supporting wafers at the central portion of the susceptor, if through-holes as many as possible can be provided, the exhausting efficiency of the boron species from the rear surface of the wafer could be enhanced in such a way that said many through-holes are designed and fabricated with relatively large connecting area left, so that the area can be strong enough to withstand the weight of the outer peripheral portion area by the wafer pocket. Similarly, with any other susceptor types than the single wafer type, it is recommended to provide through-holes as many as possible if there is an enough connecting portion left to withstand the structural strength under considering the wafer weight. Furthermore, it is preferable to define the diameter (or width) of the through-hole along the wafer direction to be, at most, equal to the wafer's outer periphery under taking the heating effect into account.
Using the horizontal single wafer type vapor-phase growth apparatus with a lamp-heating method as seen in
As seen in
The raise in the dopant concentration of the outer peripheral portion of the grown epitaxial film was listed in Table 1 and presented in FIG. 4. By comparing with the conventional type as seen in
3 mm from
(× 1016 atoms/
(× 1016 atoms/
(× 1015 atoms/
While the invention has been explained with reference to the structure disclosed herein, it is not confined to the details as set forth, and this application is intended to cover modifications and changes as may come within the scope of the following claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3845738 *||Sep 12, 1973||Nov 5, 1974||Rca Corp||Vapor deposition apparatus with pyrolytic graphite heat shield|
|US4986215 *||Sep 1, 1989||Jan 22, 1991||Kyushu Electronic Metal Co., Ltd.||Susceptor for vapor-phase growth system|
|US4990374 *||Nov 28, 1989||Feb 5, 1991||Cvd Incorporated||Selective area chemical vapor deposition|
|US5242501 *||Jul 7, 1989||Sep 7, 1993||Lam Research Corporation||Susceptor in chemical vapor deposition reactors|
|US5685906 *||Mar 23, 1995||Nov 11, 1997||Seh America, Inc.||Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality|
|US5685914 *||Apr 5, 1994||Nov 11, 1997||Applied Materials, Inc.||Focus ring for semiconductor wafer processing in a plasma reactor|
|US5704985 *||Aug 4, 1995||Jan 6, 1998||Abb Research Ltd.||Device and a method for epitaxially growing objects by CVD|
|US6043460 *||Jul 8, 1999||Mar 28, 2000||Mattson Technology, Inc.||System and method for thermal processing of a semiconductor substrate|
|US6129047 *||Jul 27, 1998||Oct 10, 2000||Sumitomo Metal Industries, Ltd.||Susceptor for vapor-phase growth apparatus|
|JPS6358819A||Title not available|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7601224||Jun 16, 2006||Oct 13, 2009||Asm America, Inc.||Method of supporting a substrate in a gas cushion susceptor system|
|US7648579||Feb 11, 2005||Jan 19, 2010||Asm America, Inc.||Substrate support system for reduced autodoping and backside deposition|
|US7691205 *||Oct 18, 2005||Apr 6, 2010||Asm Japan K.K.||Substrate-supporting device|
|US8088225||Dec 18, 2009||Jan 3, 2012||Asm America, Inc.||Substrate support system for reduced autodoping and backside deposition|
|US20050193952 *||Feb 11, 2005||Sep 8, 2005||Goodman Matt G.||Substrate support system for reduced autodoping and backside deposition|
|U.S. Classification||117/102, 118/725, 117/88, 117/200, 117/93, 118/728, 117/84, 117/2, 118/500|
|Apr 18, 2005||AS||Assignment|
Owner name: SUMITOMO MITSUBISHI SILICON CORPORATION, JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SUMITOMO METAL INDUSTRIES, LTD.;REEL/FRAME:016087/0980
Effective date: 20050406
|Aug 22, 2006||CC||Certificate of correction|
|Apr 8, 2008||FPAY||Fee payment|
Year of fee payment: 8
|Apr 5, 2012||FPAY||Fee payment|
Year of fee payment: 12