|Publication number||USRE40225 E1|
|Application number||US 10/284,308|
|Publication date||Apr 8, 2008|
|Filing date||Oct 31, 2002|
|Priority date||Nov 9, 1993|
|Also published as||US5764365|
|Publication number||10284308, 284308, US RE40225 E1, US RE40225E1, US-E1-RE40225, USRE40225 E1, USRE40225E1|
|Original Assignee||Nova Measuring Instruments Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (49), Referenced by (7), Classifications (13), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a continuation of U.S. patent application No. 09/557,938, filed Apr. 24, 2000, now reissued U.S. Pat. No. RE 38153, which is a reissue of U.S. patent application No. 08/645,346, filed May 13, 1996, now U.S. Pat. No. 5,764,365, which is a continuation-in-part of U.S. patent application Ser. No. 08/221,724, filed on Apr. 1, 1994, now U.S. Pat. No. 5,517,312.
The present invention relates to systems and methods for non-destructive quality control in general and to optical systems and methods for measuring the thickness and index of refraction of thin films, in particular.
Optical measuring instruments are typically utilized in the microelectric industry for non-contact, non destructive measurement of the thickness of thin films. Two main systems are utilized, spectrophotometers (or reflectometers) and ellipsometers. The following U.S. patents represent the prior art:
The two prior art systems are illustrated in
The spectrophotometer typically includes a transmitter 12 with a light source and appropriate optics, a beam splitter 14, as objective lens 16, a tube lens 18 and a receiver 20 which includes optical and electronic means for measurement of light intensity as a function of the input light wavelength. The transmitter 12 produces a collimated light beam 22 which is deflected by the beam splitter 14 and focused on the sample 10 by the objective lens 16. The reflected beam, labeled 24, is collected by the microscope imaging optics (lenses 16 and 18) on to a spectroscopic measurement unit within the receiver 20.
In order to measure a multiplicity of points on the sample 10, sample 10 is placed on an x-ray stage 26, X-Y stage 26 is typically very precise and heavy and, as a result, moves very slowly.
The spectrophotometers have difficulty measuring structures with very small reflectance, such as thin films on glass substrates, because the relatively low brightness of traditional white light sources does not provide a sufficient signal-to-noise ration (SNR). Spectrophotometers also have difficulty measuring films with unknown or unrepeatable dispersions of optical constants, such as amorphous silicon.
Despite these limitations, the spectral photometry method is at present widely used in industry because the instrumentation for this method is easily combined with optical microscopes and can utilize conventional microscope optics.
Ellipsometers measure changes in the polarization of light caused by reflectance from the test surface. These changes, characterized as amplitude and phase changes, are very sensitive to the thickness and optical properties of thin films.
A prior art ellipsometer is illustrated in FIG. 1B. It includes a transmitter 30 which includes a light source and appropriate optics, a polarizer 32, an optional compensator (phase retarder) 34, an analyzer 36 and a receiver 38 with a photo-detector and appropriate electronics. The polarizer 32 polarizes the light beam 40 produced by light source 30. The reflected light beam, labeled 42, passes through the analyzer 36 before reaching the receiver 38. If the compensator 34 is used, it may be loaded either between the polarizer 32 and the test sample 10 or between the sample 10 and the analyzer 36.
The ellipsometric method requires oblique illumination, i.e. an angle of incidence Θ between an incident light beam 40 and a normal 44 to the sample 10 must be greater than zero. The angle between a reflected light beam 42 and the normal 44 is equal to the angle of incidence Θ. The angle of incidence Θ should be close to the Brewster angle ΘB of the substrate. In practice, the angle of incidence Θ ranges from 45° to 70°.
Because ellipsometers measure two polarization parameters (amplitude and phase), both of which are independent of the light intensity, they are quite accurate and can also measure ultra thin films of the size of 0-100Å. However, since ellipsometers require oblique illumination as well as a highly collimated light beam, their use for high spatial resolution measurements in dense patterned structures is rather difficult.
There are two basic types of fully automated ellipsometers. Null-ellipsometers (NE) provide the most accurate thickness measurements but they require at least several seconds per measuring point. Rotating-analyzer ellipsometers (RAE) provide very high speed measurements (portions of a second per measuring point), but their sensitivity and accuracy are usually less than those of null ellipsometers.
For all of the prior art instruments, the opto-mechanical apparatus is complicated, large and heavy, and thus, the x-y stage 26 is translated between measurement points, coming to a complete stop before measurement begins. The time between measurements depends on the mass of the x-y stage 26 and on the positioning accuracy requirements and may take at least several seconds (sometimes up to several tens of seconds). This limits the speed with which a thickness mapping can occur, especially during inspection of large size substrates such as 8″ VLSI silicon wafers, 18″×18″ LCD glass panels, etc.
The footprint, or space on the floor which each machine utilizes, is typically at least twice the size of the x-y stage 26 due to its translation.
Furthermore, the prior art measuring devices are utilized for measuring once a deposition process has been completed. They cannot be utilized for in-process control, since wafer handling and other mechanical movements are not allowed within a vacuum chamber.
Other measuring instruments are also known, one of which is described in U.S. Pat. No. 4,826,321. The '321 patent presents a system similar to an ellipsometer. However, in this system, a mirror is utilized to direct a plane polarized laser beam to the thin film surface at the exact Brewster angle of the substrate on which the this film lies.
There is provided, in accordance with a preferred embodiment of the present invention, a two-dimensional beam deflector for a thickness measuring device for measuring the thickness of films on a sample with a plurality of different optical systems each performing a different measurement technique. The beam deflector includes a two dimensional translation unit, first and second deflection units and a plurality of optical assemblies. The two-dimensional translation unit translates the beam deflector along a first scanning axis and along a second scanning axis perpendicular to the first scanning axis. The first deflection unit receives a plurality of parallel input beams along parallel input axes which are close to one another and parallel to the first scanning axis. The first deflection unit also deflects the input beams along a plurality of parallel second axes close to each other and parallel to the second scanning axis. The second deflection unit receives a plurality of parallel output beams along parallel third axes close to each other and parallel to the second axes, and deflects the output beams along a plurality of parallel fourth axes close to each other and parallel to the first scanning axis. There is one optical assembly per input beam, each of which provides its input beam towards the sample, receives its output beam from the sample, processes its input and output beams in accordance with its measurement technique, and provides its output beams along the parallel third axes.
Additionally, in accordance with a preferred embodiment of the present invention, the optical assemblies can be at least an ellipsometric assembly and a spectrophotometric assembly.
There is also provided, in accordance with a preferred embodiment of the present invention, a thickness measuring device for measuring the thickness of thin films on a sample. The device includes first and second stationary illuminators, a beam deflector and first and second stationary receivers. The first and second stationary illuminators provide first and second collimated input light beams along first and second parallel input axes. The beam deflector directs the first and second input light beams towards the sample and direct and collimate corresponding first and second output light beams from the sample. The beam deflector includes a two-dimensional translation unit for translating the beam deflector along a first scanning axis parallel to the input axis, and along a second scanning axis perpendicular to the first scanning axis. The first and second stationary receivers respectively receive the first and second collimated output light beams along output axes parallel to the input axes.
There is further provided, in accordance with a preferred embodiment of the present invention, an ellipsometer which includes a stationary illuminator, a translatable beam deflector and a stationary receiver. The stationary illuminator provides a collimated input light beam along an input axis. The beam deflector, translatable at least along a first scanning axis parallel to the input axis, includes a) a first beam deflecting element for deflecting the input light beam at an angle of deflection towards the sample, b) a second beam deflecting element, different from the first beam deflecting element, for deflecting an output light beam reflected at an angle from the sample along the output axis and c) a collimating lens for receiving at least the output light beam from the second beam deflecting element and for collimating at least the output light beam. The stationary receiver receives the collimated output light beam along an output axis parallel to the input axis.
Additionally, in accordance with a preferred embodiment of the present invention, the beam deflector comprises one-dimensional translation unit for translation along the scanning axis. Alternatively, the beam deflector comprises two-dimensional translation unit for translating the beam deflector along the first scanning axis and along a second scanning axis perpendicular to the first scanning axis.
Moreover, in accordance with a preferred embodiment of the present invention, the beam deflector additionally comprises a first mirror for deflecting the input light beam from the input axis to the second scanning axis, a second mirror for deflecting the input light beam from the second scanning axis to the sample, a third mirror deflecting a reflected light beam from the sample to the second scanning axis, and a fourth mirror for deflecting the reflected light beam from the second scanning axis to the output axis.
Furthermore, in accordance with a preferred embodiment of the present invention, the first and second beam deflecting elements are mirrors.
Additionally, in accordance with a preferred embodiment of the present invention, the first beam deflecting element is a beam splitter and the second beam deflecting element is a mirror.
Finally, in accordance with a preferred embodiment of the present invention, the ellipsometer includes a unit for measuring an actual angle of incidence which may vary from the angle of deflection, wherein the unit for measuring utilizes optical elements forming part of the stationary illuminator and stationary receiver. The unit for measuring includes a position sensing device for measuring the angle of the output light beam with respect to a desired position.
The present invention will be understood and appreciated more fully from the following detailed description taken in conjunction with the drawings in which:
Reference is now made to
The ellipsometer of
The illuminator 50 typically comprises of elements similar to those of the prior art. Therefore, similar elements have similar reference numerals.
Specifically, the illuminator 50 typically comprises transmitter 30 which includes a laser light source, a polarizer 32 and an optical compensator (phase retarder) 34. As in the prior art, the laser light source, with its associated optics (not shown), produces a highly collimated laser light beam.
The beam deflector 54 typically comprises two mirrors 72 and 74 and a first objective lens 75. Mirror 72 provides the desired angle of incidence Θ to input light beam 58 by deflecting beam 58 by an angle β=90+Θ. Mirror 74 deflects a light beam 64, reflected from the sample 57, to a beam 65 along a direction parallel to the X scanning axis. First objective lens 75, whose focal plane is at the plane of sample 57, typically collimates beam 65, thereby producing a collimated reflected beam 60.
To effect scanning, only the beam deflector 54 is translated along the X-axis. The movement of the beam deflector 54 generally does not affect the measurement quality of the ellipsometer since the input and output light beams 58 and 60 are highly collimated and parallel to the scanning axis.
Because beam deflector 54 only comprises the mirrors 72 and 74 and objective lens 75, it is lightweight and therefore, its transition is fast, on the order of the measurement time. The support 56 is stationary, therefore, the device of the present invention has a minimal footprint of the size of the sample 57.
It is noted that the direction changing effected by mirrors 72 and 74 changes the polarization state of the light. These undesired changes must be separated from the desired polarization changes caused by the sample 57. If the optical parameters of the mirrors are stable, the undesired changes do not vary and thus, they can be measured and accounted for when interpreting the measurement of the sample 57.
It is further noted that reflection from the mirrors 72 and 74 may not be fully specular. Typically, some depolarized scattered light is also produced. While the percentage of scattered light is very small relative to the specular light (1:1000 or even less, depending on the quality of the mirror surface), the scattered light could limit the signal-to-noise ratio (SNR) of the system and thus, limit the measurement accuracy.
In accordance with a preferred embodiment of the present invention, the detector 52 typically comprises scattered light reducing elements in addition to the standard analyzer 36 and receiver 38. The scattered light reducing elements typically are a second objective lens 76 and a diaphragm 77, located at the focal plane of objective lens 76 and having a pinhole 78, and a condenser 79.
The analyzer 36 is typically placed within the collimated light beam 60, between objective lenses 75 and 76. Since pinhole 78 is placed at the center of the image plane which is the focal plane of lens 76, it acts as an aperture stop, allowing only the collimated portion of light beam 60 to pass through. Thus, the pinhole drastically reduces the widely scattered depolarized light introduced by the mirrors. Condenser 79 collects the light from the pinhole 78 and provides it to receiver 38.
For a pinhole 76 of 50 μm in diameter and a lens with a focal length of 30 mm, the angular aperture of the detector 52 is less than one mrad. For optical configurations having six or fewer mirrors between the polarizer 32 and the analyzer 36, the resultant intensity of scattered light reaching the detector 38 is less than 10−3% of the polarized light which is the minimum necessary for accurate ellipsometric measurements.
Receiver 38 typically comprises a photo-detector and appropriate electronics. Although not shown, the detector 52 can also include the compensator 34, located before the analyzer 36.
The ellipsometer of
Scanning unit 80 typically comprises a beam deflector 82 (see
Scanning unit 80 typically also comprises mirrors 92 and 94 (see
It is noted that the scattered light reducing elements 76-79 are efficient for a number of mirrors, as long as none of the mirrors are located very close to either the object or image planes.
Reference is now made to
The monitor of
The present invention is typically installed on a cool-down vacuum chamber to which each wafer is brought for one-two minutes after each deposition process. It thus measures the film thickness after each deposition.
In accordance with the present invention, the in-process monitor comprises a coherent and an incoherent imaging unit and an angle of incidence measuring unit, portions of whose optical paths are identical. The coherent imaging unit is utilized for ellipsometric measurements and thus, is similar to that described hereinabove with respect to FIG. 2. The incoherent imaging unit is typically operative for pattern recognition.
The monitor comprises an illumination unit, labeled 100, a detection unit, labeled 102, a beam deflector, labeled 104, and support 105, similar to support 56.
Since a vacuum must be maintained, all of the elements of the monitor, except the support 105 and the sample 57 on it, must exist outside of the vacuum chamber, labeled 108. This is shown in
In accordance with the present invention, built into a cover 110 of vacuum chamber 108, along the direction of the X-axis, are two stationary glass plates 112 operative to enable the light beam to reach the sample 57 from outside the chamber. To minimize the influence plates 112 have on optical measurements, the planes of their surface are located perpendicular to the path of optical beams 59 and 64.
The glass plates 112 are mechanically strong enough to withstand the pressure difference between the vacuum within chamber 108 and the atmospheric pressure outside of it. The plates 112 are made from stress free glass of about 5 mm thick and their aspect ratio (width/length) is about 1:50. The resultant induced birefringence is negligible and therefore, the plates generally do not affect the optical measurements.
Beam deflector 104 (see
During ellipsometric measurements, focusing lens 150 focuses the polarized and collimated light beam, labeled 158, onto the surface of sample 57 and the objective lens 152 collimates the divergent beam 64 into the reflected beam, labeled 159. An important fact to note is that lenses 150 and 152 are thin, simple lenses made of stress free glass to reduce to zero their birefringence. They may also be located between the mirrors 154 and 156 and the sample 57.
The two mirrors 154 and 156 are similar to mirrors 72 and 74 of FIG. 2 and are operative to direct the light beam to and from the sample 57 at the desired angle of incidence Θ in the Y-Z plane and to deflect the light beam between the X- and Y-axes, as shown in FIG. 4.
Thus, the light beam 59 always impinges on the sample 57 at the desired angle of incidence Θ, even though the beam deflector 104 is translated along the X-axis.
The illumination unit 100 is detailed in FIG. 5B and typically comprises a light source unit 120, a quarter wave plate (QWP) 122, a polarizer 124 and a compensator 126.
The light source unit 120 typically comprises two coherent light sources 130 and 132 for ellipsometric measurements and one incoherent light source 134 and a condenser 136 for incoherent imaging. The condenser 136 collimates the output of light source 134.
Illumination unit 100 also comprises two beam splitters 138 for combining the light from the three light sources 130, 132 and 134 onto a single path 139. Beam-splitters 138 typically are dichronic or polarizing. If they are polarizing, the planes of polarization of the two lasers 130 and 132 are set to be orthogonal.
The two coherent light sources 130 and 132 are laser diodes which produce highly monochromatic and collimated light for ellipsometric measurements. Laser 130 has a wavelength lambda_1 in the visible spectral range, preferably within the range of 630 to 680 nm, and laser 132 has a wavelength lambda_2 in the near infra-red (IR) spectral range, preferably within the range of 810 to 830 nm. The visible light is preferable for measuring such films as silicon dioxide, silicon nitride and other dielectric layers. The IR light is preferable for silicon layers (poly-silicon, amorphous silicon and the like). Under IR light, the silicon layers are almost transparent and their optical parameters are generally repeatable between processes.
The incoherent light source 134, used during pattern recognition, can be any suitable light source, such as a high brightness LED, quartz-tungsten lamp, xenon arc lamp, etc. Its specific range should preferably be narrow, for example 780±20 nm.
During imaging operations, the incoherent light source 134 is operative and it, together with the focusing lens 150, and the condenser 136 form an incoherent illuminator whose light beam forms an incoherent light spot on the surface of sample 57. The size and divergence of the incoherent light beam must be sufficient to illuminate the desired field of view, e.g. about 1 mm in its shortest dimension, at any position of the beam deflector 104 along the X-axis.
The quarter-wave plate (QWP) 122, useful for ellipsometric measurements, is oriented with its optical axis at an angle of ±45° relative to the planes of polarization of the lasers 130 and 132 and transforms their linear polarization to a circular one. The QWP 122 should be achromatic throughout the utilized spectral range of 630 to 830 nm. Suitable achromatic QWPs are manufactured, for example, by Meadowlarc Optics company, U.S.A.
The polarizer 124 and compensator 126 have associated therewith motor drives 140 and 142, respectively. Although not shown, motor drives 140 and 142 typically operate with precise angular encoders. Since most ellipsometric measurement algorithm do not require rotation of the compensator, a manual driving mechanism (for alignment only) may alternatively be used instead of the motor drive 142.
For the two wavelength configuration of the present invention, the polarizer 124 is achromatic. A suitable polarizer is a Glan-Thomson polarization prism. For a single wavelength configuration in the red spectral range, a sheet polarizer, such as the HN38S type from Polaroid Corporation of the U.S.A., is suitable. For all polarizers, an extinction ratio of more than 105 is required for reaching the thickness measurement accuracy required in microelectronic deposition process control.
The detection unit 102 (
The ellipsometric detector unit of detection unit 102 is comprised of elements similar to those of the ellipsometer of
Since, as in the embodiment of
The beam splitter 178 splits the incoming beam into two beams, each having the appropriate wavelength, lambda_1 and lambda_2.
The photo-detectors 170 and 172 detect, via the filters 174 and 176 respectively, the intensity of light of the two wavelengths lambda_1 and lambda_2, respectively. For most applications, the photo-detectors are silicon photovoltaic detectors, such as the S5591 manufactured by Hamamatsu Photonics U.U. of Hamamatsu City, Japan. If necessary, more sensitive but more expansive photomultipliers may be used.
It is noted that the present invention allows simultaneous measurement of two wavelengths which enables the measurement of two pairs of ellipsometric parameters, the amplitude parameter psi and the phase parameter delta. As a result, four parameters of the thin film structure, e.g. thickness and index of refraction of each of two layers, can be simultaneously determined. Such a measurement is useful when two different layers are deposited on the sample 57 in one deposition cycle.
Since lenses 152 and 164 are designed to be generally free of aberrations in the two wavelengths lambda_1 and lambda_2, the spatial resolution of the monitor of the present invention depends only on the size of pinhole 166 and on the point spread function of the coherent imaging system. The point spread function is defined by the F-stop of the coherent imaging system and is generally quite small. Practically, the thickness measurements are carried out on scribe lines, pads or special test areas which are not less than 50 μm wide and therefore, a pinhole size of 20-40 μm and an F# of 5-6 is acceptable.
It is noted that a circular pinhole produces an elliptical measurement spot, with an aspect ratio of 1/cosΘ. If this is unacceptable, the shape of pinhole 166 has to be asymmetrical to compensate.
The two-dimensional image acquisition system typically operates in conjunction with the incoherent image illuminator and utilizes the objective lens 152 located on the beam deflector 104. The image acquisition system typically comprises the imaging lens 164, the diagram 165 with the pinhole 166, a magnifying lens 180, a mirror 182, an optional band pass filter 184 and a high resolution, area charge coupled device (CCD) 186. For the purposes of the image acquisition system, the diaphragm 165 is made from a grating 167 which has the pinhole 166 therein. The grating 167 does not affect the ellipsometric measurements.
The surfaces of sample 57 and grating 167 are respectively located in the focal planes of lenses 152 and 164. The lenses 152 and 164 typically have the same focal length, thereby providing an optical magnification M of 1×.
As is known in the art, if the object plane is tilted relative to the imaging axis (the axis of the reflected beam 64), the image plane is also tilted relative to the optical axis (the axis of a beam 188) from the analyzer 160. However, the extent of the tilting of the image plane is a function of the magnification, as described by the Scheimpflug equation:
where Θ is the angle of incidence and Θ″ is the tilt angle of the image plane.
In the monitor of
Since the magnification M of the monitor is 1, the object plane (sample surface) and the image plane are tilted at the same angle Θ relative to their optical axes. Unfortunately, when the image plane is thus tilted, only a portion of it can be focused on the CCD 186.
In order to force the image plane to be perpendicular to the optical axis, thereby ensuring that the entire image plane is focused on the CCD 186, the grating 167 is aligned along the intermediate image plane. The grating 167 is chosen so that only the first diffraction maximum is utilized for imaging to the CCD 186. For example, for lambda_3=780 nm. Θ=70° and a grating frequency 1200 cycles/mm, the image plane of a diffracted beam 190 is almost perpendicular to the optical axis. Therefore the image plane may be enlarged by the magnifying lens 180 without the above-described Scheimpflug problem.
The magnifying lens 180 is placed in the direction of the first diffraction maximum for the wavelength lambda_3 of the incoherent illuminator. The lens 180 provides magnification, of at least 5×, which is strong enough for recognition of the test areas of the wafer.
Mirror 182 directs the diffracted beam 190 towards the CCD 186 which is located at the image plane of magnifying lens 180. The high resolution CCD 186, such as the TM-6CN CCD manufactured by Pulnix America Inc. of Sunnyvale, Calif., U.S.A. transforms the image to a video signal.
If lasers 130 and 132 operate at the same time as the incoherent light source 134, the optional band pass filter 184 ensures that only light from the incoherent illuminator is used for imaging.
If the incoherent light is not monochromatic, the diffraction of grating 167 will produce spectral dispersion. In this case, the numerical aperture of lens 180 has to be high enough to collect most, if not all, of the diffraction beams within the entire spectral range. In order to achieve high image quality, the lens 180 should be corrected for the chromatic aberrations in the spectral range of the incoherent light.
The quality of the obtained image depends strongly on the F-stops (F#) of the objective and imaging lenses 152 and 164 and the aberrations that they produce. For a focal length for lenses 152 and 164 of about 30 mm and a beam diameter of about 5 mm, the F# is about 6, a value which is used for high quality photography and other applications.
The lens 180 is a high quality microscope grade objective lens and therefore, does not significantly affect the final image quality. The grating 167 also does not significantly affect the image quality because its spatial frequency in the image plane (1200/5×=240 cyc/mm) is significantly greater than the Nyquist frequency of the CCD (about 50 cyc/mm). Therefore the above two-dimensional image acquisition system provides the high spatial resolution needed for accurate pattern recognition.
For the two-dimensional image acquisition system, the pinhole 166 serves to locate the measurement spot in the image of the sample 57. Since the pinhole 166 is located at the intermediate image plane (grating 167) and since it allows light to pass through it, rather than being reflected toward the CCD 186, the pinhole 166 appears as a sharp dark point in the image produced by the CCD 186. Thus, when viewing the CCD image, the location of the measurement spot is immediately known, it being the location of the dark spot.
It is noted that the pinhole 166 performs three functions: 1) it reduces the scattered light from the mirror 154 and 156; 2) it provides high spatial resolution; and 3) it provides an indication of the location of the measurement spot in the image of the area being measured.
The angle of incidence measurement unit provides feedback about the actual angle of incidence Θ for situations when the surface of the sample 57 is not absolutely flat.
The angle of incidence measurement unit typically comprises the objective lens 152, a beam-splitter 194, a spectral filter 196 and a position-sensitive detector (PSD) 198, such as the S2044 detector manufactured by Hamamatsu Photonics U.U. Beam splitter 194 provides a portion of reflected beam 159 to the PSD 198 via the spectral filter 196.
Since the measurement point on the sample 57 is in the focal plane of objective lens 152 and since the PSD 198 is in the far field of this lens, any change in the angle of reflection (equal to the angle of incidence on the non-flat surface of sample 57) displaces the light spot on the PSD 198 and may be accurately measured. If the light spot is centered on the PSD 198, the angle of incidence is expected angle of incidence Θ, typically of 70°. If the spot is below or above the central location, the actual angle of incidence is larger or smaller, respectively, than Θ. The relationship describing the extent of the skew with the change in the actual angle of incidence is calibrated prior to operating the monitor. The ellipsometric measurements are then interpreted, by a data processor (not shown), in light of the actual angle of incidence.
It is noted that most supports typically comprise means (not shown) for keeping the top surface of sample 57 in a fixed position, such as by vacuum or electrostatic clamping, an auto-focus mechanism. Once such systems have been actuated, the only reason for beam displacement on the PSD 198 is the deviation in the angle of incidence.
Reference is now made to
The beam deflector 202 typically comprises an objective lens 210, a beam splitter 212 and a mirror 214. From the light source 200, the beam splitter receives a light beam 209, parallel to the surface of the sample 208, and deflects it toward the sample 208, via lens 210. The sample 208 is located in the focal plane of lens 210. The reflected light beam (not labeled) is collimated by lens 210, passes through beam splitter 212 and is deflected by mirror 214 along an axis parallel to the surface of sample 208.
Since light beams 209 and 211 are parallel to each other and to the surface of sample 208, the movement of the beam deflector 202 in the X direction does not affect the measurements of the detector unit 206.
As in the embodiments of
Reference is now made to
The spectrophotometric assembly 304 comprises, shown by a box labeled 306, the entirety of optical and controlling elements needed for spectrophotometry, except those elements which deflect the light beam towards the wafer 301. The details of the elements of box 306 have been provided hereinabove with respect to FIG. 6 and therefore, will not be described in detail herein. Spectrophotometric assembly 304 also comprises a mirror 306 for deflecting a light beam, labeled 305, from assembly 304 to the beam deflector 300 and vice versa.
The ellipsometric assembly 302 comprises an illuminator 310 and an analyzer 312, similar in function to the illuminator 100 and analyzer 102 of
Below both assemblies 302 and 304 is a fixed input/output surface 320 on which are mounted an input mirror 330 and an output mirror 342. The input and output mirrors 330 and 342, respectively, deflect light beams into and out from the optical assemblies 302 and 304.
Mechanically, the beam deflector 300 is similar to the beam deflector of FIG. 3 and comprises a translatable Y-axis stage 322 (shown in two sections 322a and 322b) and a translatable X-axis stage 324 which translates along the Y-axis stage 322.
Optically, the beam deflector 300 comprises a Y-to-X mirror 332, a spectrophotometry mirror 334, an input ellipsometry mirror 336, an output ellipsometry mirror 338 and an X-to-Y mirror 340. The Y-to-X mirror 332 and X-to-Y mirror 334 are mounted on the separate sections of the Y-axis stage 322, where the Y-to-X mirror 332 deflects input light beams from the Y to the X axis and the X-to-Y mirror 334 deflects output light beams from the X to the Y axis. The remaining elements are mounted on the X-axis stage and perform the actual optical measurement.
For the spectrophotometric measurements, light beam 305 is deflected by input mirror 330 in the Y direction along a first Y axis (not illustrated for clarity) towards the Y-to-X mirror 332 which, in turn, deflects the light beam, now labeled 350, towards the spectrophotometric mirror 334. Mirror 334 deflects the light beam 350 towards the wafer 301 at an angle perpendicular to the wafer 301. The reflected light returns to mirror 334 and is reflected back through mirrors 332 and 330 to the spectrophotometric assembly 304.
For the ellipsometric measurements, light beam 311 also is reflected by mirrors 330 and 332 towards the X-axis stage 324. However, as shown in
The input ellipsometry mirror 336 is positioned on the X-axis stage at the appropriate height above the wafer so as to receive “ellipsometric” light beam, labeled 351, from the Y-to-X mirror 332. Mirror 336 deflects beam 351 towards the wafer 301 so as to impinge upon wafer 301 at the appropriate angle α. The angle α, as shown in
The reflected beam, labeled 353, impinges upon mirror 338 and is deflected thereby towards X-to-Y mirror 340. From the mirror 340, the output beam travels along the Y direction and is deflected by mirror 342 into the ellipsometric assembly 302. Mirror 316, in turn, directs the output beam into the analyzer 312 for processing.
It will be appreciated that the beam deflector 300 provides translation for the measuring optics of a multiplicity of optical measuring units as a single unit. The type of measuring unit does not matter; rather, the optical paths at the point of measurement should not cross. In the embodiment of
It will be appreciated by persons skilled in the art that the present invention is not limited to what has been particularly shown and described hereinabove. Rather the scope of the present invention is defined by the claims which follow:
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3645623||Sep 25, 1970||Feb 29, 1972||Patten Raymond A||Apparatus for monitoring film thickness by reflecting a light beam from the film surface|
|US3869211||Jun 22, 1973||Mar 4, 1975||Canon Kk||Instrument for measuring thickness of thin film|
|US4308586||May 2, 1980||Dec 29, 1981||Nanometrics, Incorporated||Method for the precise determination of photoresist exposure time|
|US4516855||Mar 18, 1982||May 14, 1985||International Business Machines Corporation||Method and apparatus for determining the polarization state of a light wave field|
|US4555767||May 27, 1982||Nov 26, 1985||International Business Machines Corporation||Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance|
|US4585348||Jan 25, 1984||Apr 29, 1986||International Business Machines Corporation||Ultra-fast photometric instrument|
|US4618262||Apr 13, 1984||Oct 21, 1986||Applied Materials, Inc.||Laser interferometer system and method for monitoring and controlling IC processing|
|US4647207||May 24, 1985||Mar 3, 1987||Sagax Instrument Ab||Ellipsometric method and apparatus|
|US4653924||Jun 10, 1985||Mar 31, 1987||Victor Company Of Japan, Ltd.||Rotating analyzer type ellipsometer|
|US4681450||Jun 21, 1985||Jul 21, 1987||Research Corporation||Photodetector arrangement for measuring the state of polarization of light|
|US4713140||Mar 2, 1987||Dec 15, 1987||International Business Machines Corporation||Laser luminescence monitor for material thickness|
|US4815856||Jun 5, 1986||Mar 28, 1989||Storage Technology Partners Ii||Method and apparatus for measuring the absolute thickness of dust defocus layers|
|US4826321||Mar 14, 1988||May 2, 1989||Nanometrics, Incorporated||Thin dielectric film measuring system|
|US4842410||Apr 7, 1987||Jun 27, 1989||Geo-Centers, Inc.||Apparatus and method utilizing interference fringes to determine the thermal stability of a liquid|
|US4873430||Oct 25, 1988||Oct 10, 1989||International Business Machines Corporation||Method and apparatus for optically measuring characteristics of a thin film by directing a P-polarized beam through an integrating sphere at the brewster's angle of the film|
|US4908508||Dec 23, 1987||Mar 13, 1990||Akzo N.V.||Process and apparatus for determining thicknesses of layers|
|US4957368||Mar 16, 1989||Sep 18, 1990||Photoacoustic Technology, Inc.||Apparatus and process for performing ellipsometric measurements of surfaces|
|US4962063||Mar 10, 1989||Oct 9, 1990||Applied Materials, Inc.||Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing|
|US4974919||Jul 25, 1989||Dec 4, 1990||Canon Kabushiki Kaisha||Illuminating device|
|US4999014||May 4, 1989||Mar 12, 1991||Therma-Wave, Inc.||Method and apparatus for measuring thickness of thin films|
|US5042951||Sep 19, 1989||Aug 27, 1991||Therma-Wave, Inc.||High resolution ellipsometric apparatus|
|US5061072||Jan 10, 1989||Oct 29, 1991||C/O The Secretary, Comonwealth Of Australia Department Of Defence||Differential ellipsometer|
|US5120966||Feb 6, 1991||Jun 9, 1992||Dainippon Screen Mfg. Co., Ltd.||Method of and apparatus for measuring film thickness|
|US5159412||Mar 15, 1991||Oct 27, 1992||Therma-Wave, Inc.||Optical measurement device with enhanced sensitivity|
|US5166752||Jan 11, 1990||Nov 24, 1992||Rudolph Research Corporation||Simultaneous multiple angle/multiple wavelength ellipsometer and method|
|US5181080||Dec 23, 1991||Jan 19, 1993||Therma-Wave, Inc.||Method and apparatus for evaluating the thickness of thin films|
|US5259881 *||May 17, 1991||Nov 9, 1993||Materials Research Corporation||Wafer processing cluster tool batch preheating and degassing apparatus|
|US5274434||Oct 17, 1991||Dec 28, 1993||Hitachi, Ltd.||Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line|
|US5310410 *||Dec 13, 1991||May 10, 1994||Sputtered Films, Inc.||Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus|
|US5420680||Aug 9, 1993||May 30, 1995||Ricoh Company, Ltd.||Method for measuring refractive index and thickness of film and apparatus therefor|
|US5695564||Aug 3, 1995||Dec 9, 1997||Tokyo Electron Limited||Semiconductor processing system|
|US5766360||Mar 25, 1993||Jun 16, 1998||Kabushiki Kaisha Toshiba||Substrate processing apparatus and substrate processing method|
|US5940175 *||Nov 1, 1996||Aug 17, 1999||Msp Corporation||Method and apparatus for surface inspection in a chamber|
|US6113733||Nov 7, 1997||Sep 5, 2000||Matsushita Electric Industrial Co., Ltd.||Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device|
|EP0558781A1||Mar 5, 1992||Sep 8, 1993||Micronic Laser Systems Ab||Method and apparatus for exposure of substrates|
|EP0558781B1||Mar 5, 1992||Aug 5, 1998||Micronic Laser Systems Ab||Method and apparatus for exposure of substrates|
|JPH052060A||Title not available|
|JPH0590211A||Title not available|
|JPH01105556A||Title not available|
|JPH02126106A||Title not available|
|JPH04301506A||Title not available|
|JPH05280937A||Title not available|
|JPS6412208A||Title not available|
|JPS6454207A||Title not available|
|JPS59109807A||Title not available|
|JPS59125009A||Title not available|
|WO1987006561A1||Apr 6, 1987||Nov 5, 1987||Varian Associates||Modular semiconductor wafer transport and processing system|
|WO1992000485A1||Jun 24, 1991||Jan 9, 1992||Ford Werke Ag||A pipe coupling|
|WO1993003254A1||Jul 23, 1992||Feb 18, 1993||Exploration & Prod Serv||Improved sub-sea test tree apparatus|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7551294 *||Sep 18, 2006||Jun 23, 2009||University Of Rochester||System and method for brewster angle straddle interferometry|
|US7872751||Nov 25, 2008||Jan 18, 2011||J.A. Woollam Co., Inc.||Fast sample height, AOI and POI alignment in mapping ellipsometer or the like|
|US8436994||Jan 15, 2011||May 7, 2013||J.A. Woollam Co., Inc||Fast sample height, AOI and POI alignment in mapping ellipsometer or the like|
|US20070076214 *||Sep 18, 2006||Apr 5, 2007||University Of Rochester||System and method for brewster angle straddle interferometry|
|US20090103093 *||Nov 25, 2008||Apr 23, 2009||Liphardt Martin M||Fast sample height, AOI and POI alignment in mapping ellipsometer or the like|
|USRE41906 *||Mar 21, 2008||Nov 2, 2010||Nova Measuring Instruments, Ltd.||Two dimensional beam deflector|
|WO2011024170A1 *||Aug 26, 2010||Mar 3, 2011||Brightview Systems Ltd.||A method and apparatus for thin film quality control in a batch manufacturing layout|
|U.S. Classification||356/630, 356/369|
|International Classification||G03F7/20, G01B11/06, G02B26/08|
|Cooperative Classification||G03F7/70483, G03F7/704, G01B11/065, G03F7/70358|
|European Classification||G01B11/06C4B, G03F7/70L, G03F7/70F28, G03F7/70H2D|
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