USRE40352E1 - Switch mode power supply with reduced switching losses - Google Patents

Switch mode power supply with reduced switching losses Download PDF

Info

Publication number
USRE40352E1
USRE40352E1 US10/846,998 US84699804A USRE40352E US RE40352 E1 USRE40352 E1 US RE40352E1 US 84699804 A US84699804 A US 84699804A US RE40352 E USRE40352 E US RE40352E
Authority
US
United States
Prior art keywords
power supply
mode power
switch mode
switching transistor
supply according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US10/846,998
Inventor
Gerald Deboy
Franz Hirler
Martin März
Hans Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to US10/846,998 priority Critical patent/USRE40352E1/en
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SIEMENS AKTIENGESELLSCHAFT
Application granted granted Critical
Publication of USRE40352E1 publication Critical patent/USRE40352E1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches

Definitions

  • the present invention relates to a switch mode power supply having a switching transistor with reduced switching losses.
  • switch mode power supply is intended to cover all types of forward converters, flyback converters, half-bridge and full-bridge converters as well as step-up and step-down controllers, such as those used in power supply units, lamp ballasts, welding converters or RF converters.
  • the switching losses mentioned in item (a) above and which can scarcely be influenced by the switching transistor itself are reduced or are entirely avoided at the moment at high switching frequencies by using special components, such as Schottky, diodes, or by selecting circuit topologies without any critical communication processes, such as resonant converters. Losses such as these also include, for example, the power loss caused by the recovery charge when the current is actively switched off by pn-diodes.
  • the other switching losses can be influenced significantly by the characteristics of the switching transistor and its actuation.
  • the current-voltage overlap losses are dependent to a major extent on the duration of the switching process itself.
  • FIG. 2a shows the profiles of the drawing current I d and of the drain-source voltage U ds of a MOSFET power switch 1 (see FIG. 1 ) as an example of a switching transistor when an inductive load 2 is being switched off.
  • a switching process with a switching time T starts with a decrease in the control gate voltage V gs , as a result of which the resistance of the power switch 1 rises.
  • the inductive load 2 forces the current I d to continue to flow, with the consequence that the drain-source voltage U ds also rises with the resistance, until the full load current I d can be carried by another circuit path, for example, a free wheeling diode 3 .
  • a capacitor 4 with an external capacitance C ext is therefore provided in parallel with the power switch 1 to relieve the switching-off load. Consideration has also already been given to use the MOSFET's own output capacitance for reducing the switching load (see B. Carsten: “FET selection and driving considerations for zero switching loss and low EMI in HF “Thyristor dual” power converters”, Power Conversion 1996, Conference Proceedings 5/96, pages 91-102).
  • the capacitor 4 with the capacitance C ext slows down the rise in the voltage U ds .
  • two current paths are produced, with a current I ch via the channel of the MOSFET which forms the power switch, and a current via the capacitor 4 . Since the current I ch can now be switched off very quickly—without causing any rise in the drain-source voltage U ds (no “Miller” effect, see the gate-drain capacitance C gd in FIG. 1 ), the overlapping area of the current I ch and the drain-source voltage U ds , and thus the switching-off energy loss (see the area 6 ) can be reduced virtually indefinitely.
  • circuitry such as this is suitable only for circuits in which the power switch is switched on at zero voltage (zero voltage switching ZVS), since, otherwise, the losses are just moved from the switching-off to the switching-on process.
  • the vast majority of standard circuits have to be switched on when the voltage is present, however. In this situation, until now, it has been possible to achieve switching-off load relief only by using complex circuitry, which in general, also produces losses for the power switch or switching transistor.
  • a switch mode power supply that includes a switching transistor having a load path formed by a first main connection and a second main connection.
  • the first main connection and the second main connection are provided for receiving a voltage applied thereto.
  • the switching transistor includes a semiconductor body with a semiconductor layer of a first conductance type forming a drift area.
  • a load is connected in series with the load path of the switching transistor.
  • a continuous drain region of a second conductance type is incorporated into the drift area and is connected to the first main connection.
  • a continuous source region of the second conductance type is incorporated into the drift area and is connected to the second main connection.
  • a reverse-biased pn-junction is produced by an interaction between the semiconductor body and the continuous drain region and between the semiconductor body and the continuous source region.
  • the reverse-biased pn-junction has a large inner voltage-dependent surface area that is variable as a function of the voltage applied to the first main connection and the second main connection.
  • the switching transistor is characterized by a first product of a switch-on resistance R on and a gate charge Q gtot , the first product given by: R on *Q gtot /10 V ⁇ 2.5 ns.
  • the switching transistor When the voltage applied is 400 V, the switching transistor is characterized by a second product of the switch-on resistance R on and the energy E ds stored in a drain-source capacitance, the second product given by R on *E ds ⁇ 1.6 V 2 ⁇ s.
  • the switch mode power supply has a switching transistor with a first and a second main connection forming a load path.
  • a load is connected in series with the load path of the switching transistor.
  • the switching transistor has a semiconductor body with a semiconductor layer of the first conductance type into which continuous regions of the second conductance type are incorporated which, interacting with the semiconductor body at the reverse-biased pn-junction which is formed, create a large inner, voltage-dependent source area.
  • the surface area is varied as a function of a voltage applied to the main connections.
  • the switching transistor is in the form of a MOSFET.
  • the output capacitance values for low drain-source voltages are very high, with this capacitance decreasing, as the drain-source voltage rises, to values which are so low that the energy stored in the transistor assumes very low values.
  • the voltage-dependent surface area of the pn-junction is reduced as the voltage applied is increased.
  • an amount of charge in the switching transistor which is calculated via a line integral along a line at right angles to the pn-junction, remains below a material-specific breakdown charge.
  • the continuous drain region of the second conductance type and the continuous source region of the second conductance type are configured in a structure selected from the group consisting of a vertical structure and a lateral structure.
  • a charge storage device is connected in parallel with the load path of the switching transistor.
  • FIG. 1 shows a basic functional unit of a switch mode power supply
  • FIGS. 2a and 2b show current and voltage profiles for exiting switch mode power supplies
  • FIG. 2c shows current and voltage profiles for the invention switch mode power supply disclosed herein;
  • FIG. 3 shows a section through a MOSFET that can be used for the inventive switch mode power supply
  • FIGS. 4a to 4 c shows possible layouts for the MOSFET shown in FIG. 3 ;
  • FIG. 5 shows the profile of the drain-source capacitance C ds as a function of the drain-source voltage U ds for a standard MOSFET and for the inventive switching transistor;
  • FIGS. 6a to 6 c show a plan view through a MOSFET which can be used for the inventive switch mode power supply and in which the reverse-biased pn-junction is shown for various voltages.
  • FIG. 1 there is schematically shown the basic structure of a switch mode power supply (without the capacitor 4 and the free wheeling diode 3 ) with a power switch 1 that is designed according to the invention and that is in the form of a MOSFET with, for example, an inductive load 2 is connected in series.
  • the MOSFET of the power switch 1 specifically has the following characteristics:
  • the switching transistor or power switch 1 has an extremely non-linear profile of the drain-source capacitance C ds .
  • Very high values for C ds for low drain-source voltages U ds result in the desired delay of the voltage rise after switching off the MOSFET channel.
  • the load current thus changes from initially being the channel current I ch to being the charge current of the output capacitance C oss .
  • the delay in the voltage rise also makes it possible to achieve virtually zero-loss switching-off with a finite driver power and thus a finite switching-off rate.
  • a transistor with optimized power loses has particularly low products of the switch-on resistance R dx(on) and the gate charge Q gtot , and also of the switch-on resistance and stored energy E ds , and in consequence, achieves extraordinarily low switching losses.
  • the product R on *E ds (400 V) is preferably ⁇ 1.6 V 2 ⁇ s and the product R on *Q gtot (10 V)/10 V is preferably ⁇ 2.5 ns.
  • the bracketed expressions (400 V) etc. indicate the applied voltages.
  • the extremely non-linear capacitance profile of the power switch 1 furthermore leads to a soft switching edge, which has few harmonics an is advantageous from the EMC point of view.
  • the switching edge is advantageously “rounded” but is not excessively extended, as would be the case if a discrete capacitor (curve 7 ) or a conventional MOSFET with a high output capacitance (curve 8 ) were to be used. Lengthening of the switching edges in general limits the minimum duty ration, and in consequence leads to problems in the system during low-load operation.
  • the output capacitance C oss corresponds to the capacitance C ds and C gd connected in parallel.
  • C gd should remain as low as possible in order to minimize the reaction (“Miller” effect).
  • the desired high value of the drain-source capacitance C ds can be achieved in a power switch by deliberately increasing the surface area of the reverse-biased pn-junction.
  • structures such as this can be produced by inserting, for example, the p-conductive regions in the n-conductive drift path of the semiconductor power switch.
  • the reverse-biased pn-junction must in this case have a continuous inner surface area, that is to say all of the p-regions must be conducively connected to one another.
  • the majority of the output capacitance in such a configuration results from the drain-source capacitance.
  • the output capacitance In order to keep the amount of energy stored in the power switch as low as possible, the output capacitance must assume very low values at high voltages, as shown in Equation 1.
  • the doping and dimensions of the p-regions incorporated in the drift zone are dimensioned such that their charge is depleted by the opposite charge of the surrounding semiconductor material by transverse electrical fields at low voltages, then this results in a rapid reduction in the surface area as the voltage rises.
  • the dimensioning must in this case be such that the line integral of the doping of the p-regions at right angles to its surface remains below the material-specific breakdown charge. The depletion voltage in this case becomes less, the shorter the distances between the semiconductor regions of opposite conductance type.
  • FIG. 3 now shows the inventive MOSFET which can be used as a power switch in a switch mode power supply.
  • a silicon semiconductor layer 10 which is, for example, between 4 and 50 ⁇ m thick is located on an n + -doped silicon semiconductor substrate 9 .
  • a p ⁇ -conductive source zone 11 and a p ⁇ -conductive drain zone 12 which each have a penetration depth of about 2 ⁇ m, are embedded in the silicon semiconductor layer 10 .
  • Underneath the source zone 11 and drain zone 12 a p-conductive region 13 or 14 , respectively, with a penetration depth of 4 to 40 mm is formed, so that it ends at a distance of about 1 to 10 mm from the semiconductor substrate 9 .
  • the higher values above apply to high-voltage components, while the lower values are appropriate for low-voltage components.
  • Another gate electrode 15 is provided between the source and drain zones 11 and 12 , respectively.
  • the indicated conductance types can, of course, also in each case be reversed. It is also possible to use lateral structures instead of vertical structures.
  • FIGS. 4A to 4 C show further possible structures for the p-conductive regions 13 and 14 : these are finely structured and are each composed of, for example, narrow plates ( FIG. 4A ) which may be continuous in a meandering shape; columns configured in a square or hexagon (FIG. 4 B); or leaf-shaped configurations configured in squares or hexagons (FIG. 4 C), which are connected to one another via a common electrode.
  • narrow plates FIG. 4A
  • FIG. 4 B columns configured in a square or hexagon
  • FIG. 4 C leaf-shaped configurations configured in squares or hexagons
  • n-conductive continuous regions 14 in a p-conductive semiconductor layer 10 is shown in a plan view in FIGS. 6A to 6 C.
  • the regions 13 , 14 are in the form of strips.
  • the MOSFET is shown laterally in the illustration.
  • the reference numeral 12 denotes the drain zone, and the reference number 11 denotes the source zone.
  • the gate electrode 15 is indicated by dashed lines.
  • the n-conductive regions 14 are incorporated in the p-conductive semiconductor layer 10 .
  • the profile of the space-charge zone for various drain-source voltages is also shown in FIGS. 6A to 6 C. The higher the drain-source voltage, the broader is the space-charge zone. In consequence, the surface area of the reverse-biased pn-junction is reduced as the voltage rises.
  • the invention makes it possible to produce a switch mode power supply with reduced switching losses using a MOSFET power switch 1 .
  • the output capacitance C ds of the MOSFET power switch 1 falls quickly to low values as a function of the drain-source voltage U ds , such that a load current I d applied to the MOSFET power switch 1 changes from initially being the channel current of the MOSFET power stitch 1 to being the charge current of the output capacitance C oss .
  • FIG. 5 shows the considerable advantages which can be achieved with the present invention, using an example of a 600 V switching transistor with an active chip area of 20 mm 2 (190 m ⁇ ): at low drain-source voltages U ds , below about 40 V, the drain-source capacitance is considerably greater (see curve B) than with the prior art (see curve A) while, at higher drain-source voltages, the drain-source capacitance of the switching transistor according to the invention is considerably less than the corresponding values for the existing transistor.

Abstract

The invention relates to a switching transistor presenting reduced switching losses. In the switching transistor, output capacitance is very high when drain/source voltages are low. As the drain/source voltage increases, the capacitance falls to such low values that the energy stored in the transistor becomes very low.

Description

CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of copending International Application No. PCT/DE99/02874, filed Sep. 10, 1999, which designated the United States.
BACKGROUND OF THE INVENTION Field of the Invention
The present invention relates to a switch mode power supply having a switching transistor with reduced switching losses.
The term “switch mode power supply” is intended to cover all types of forward converters, flyback converters, half-bridge and full-bridge converters as well as step-up and step-down controllers, such as those used in power supply units, lamp ballasts, welding converters or RF converters.
For some time now, there has been an increasing trend toward system miniaturization and toward increasing the power density in components. It can be excepted that this tendency in power electronics will also be continued in the future. This trend is associated with a development toward even higher switching frequencies, since this is the only way in which passive components can also be miniaturized in a corresponding manner. Furthermore, particularly in the case of industrial generators, power switching transistors in switch mode power supplies are starting to run into frequency bands that have been reserved for electron tubes for a long time. This is to say, for example, frequency bands up to what is referred to as the “ISM” frequency of 13.56 MHz.
As the switching frequency rises, the switching losses in switching transistors become increasingly important. Roughly speaking, these switching losses can be split into three groups:
    • (a) losses in the switching transistor, which are caused by external, generally parasitic, or non-ideal circuit elements and which could not be avoided even using “ideal” switching transistors;
    • (b) losses in the switching transistor resulting from an overlapping phase of the current and voltage during the actual switching process; and
    • (c) losses in the switching transistor resulting from the discharging of the switch's own capacitances during the switching-on process.
The switching losses mentioned in item (a) above and which can scarcely be influenced by the switching transistor itself are reduced or are entirely avoided at the moment at high switching frequencies by using special components, such as Schottky, diodes, or by selecting circuit topologies without any critical communication processes, such as resonant converters. Losses such as these also include, for example, the power loss caused by the recovery charge when the current is actively switched off by pn-diodes.
The other switching losses, as mentioned in items (b) and (c) above, can be influenced significantly by the characteristics of the switching transistor and its actuation. For example, the current-voltage overlap losses are dependent to a major extent on the duration of the switching process itself.
For illustrative purposes, FIG. 2a shows the profiles of the drawing current Id and of the drain-source voltage Uds of a MOSFET power switch 1 (see FIG. 1) as an example of a switching transistor when an inductive load 2 is being switched off. A switching process with a switching time T starts with a decrease in the control gate voltage Vgs, as a result of which the resistance of the power switch 1 rises. However, the inductive load 2 forces the current Id to continue to flow, with the consequence that the drain-source voltage Uds also rises with the resistance, until the full load current Id can be carried by another circuit path, for example, a free wheeling diode 3. This means that, throughout the entire phase in which the voltage Uds across the power switch 1 is rising, the full load current Id is still flowing via the power switch 1. The area 6 under the product of the switch current and voltage (shown shaded) corresponds to the switching energy loss produced in the power switch 1. Although this area can be reduced by shortening the switching time T it cannot, however, be reduced to zero in practice.
Because of the high gate charge of present-day power switches, in particular MOSFETs, high switching speeds demand very high driver currents, so that reducing the switching times T frequently runs into limits just for cost reasons.
A capacitor 4 with an external capacitance Cext is therefore provided in parallel with the power switch 1 to relieve the switching-off load. Consideration has also already been given to use the MOSFET's own output capacitance for reducing the switching load (see B. Carsten: “FET selection and driving considerations for zero switching loss and low EMI in HF “Thyristor dual” power converters”, Power Conversion 1996, Conference Proceedings 5/96, pages 91-102).
As can be seen from FIG. 2(b), the capacitor 4 with the capacitance Cext slows down the rise in the voltage Uds. At the same time, two current paths are produced, with a current Ich via the channel of the MOSFET which forms the power switch, and a current via the capacitor 4. Since the current Ich can now be switched off very quickly—without causing any rise in the drain-source voltage Uds (no “Miller” effect, see the gate-drain capacitance Cgd in FIG. 1), the overlapping area of the current Ich and the drain-source voltage Uds, and thus the switching-off energy loss (see the area 6) can be reduced virtually indefinitely.
However, circuitry such as this is suitable only for circuits in which the power switch is switched on at zero voltage (zero voltage switching ZVS), since, otherwise, the losses are just moved from the switching-off to the switching-on process. Specifically, when switching on at a time when voltage is present, the energy stored in the external capacitor 4 and the energy stored in the output capacitance are converted into heat losses in the power switch 1 [see the shaded area 5 in FIGS. 2b and 2c, which corresponds to the time integral of the product of the voltage Uds and the current (Ioss)*(Cext), where Ioss=output current and Coss=Cgd+Cds]. The vast majority of standard circuits have to be switched on when the voltage is present, however. In this situation, until now, it has been possible to achieve switching-off load relief only by using complex circuitry, which in general, also produces losses for the power switch or switching transistor.
No satisfactory solution has yet been found to avoid the above switching losses.
SUMMARY OF THE INVENTION
It is accordingly an object of the invention to provide a switch mode power supply having a switching transistor which overcomes the above-mentioned disadvantageous of the prior art apparatus of this general type, and which, in particular, is distinguished by drastically reduced switching losses.
With the foregoing and other objects in view there is provided, in accordance with the invention, A switch mode power supply that includes a switching transistor having a load path formed by a first main connection and a second main connection. The first main connection and the second main connection are provided for receiving a voltage applied thereto. The switching transistor includes a semiconductor body with a semiconductor layer of a first conductance type forming a drift area. A load is connected in series with the load path of the switching transistor. A continuous drain region of a second conductance type is incorporated into the drift area and is connected to the first main connection. A continuous source region of the second conductance type is incorporated into the drift area and is connected to the second main connection. A reverse-biased pn-junction is produced by an interaction between the semiconductor body and the continuous drain region and between the semiconductor body and the continuous source region. The reverse-biased pn-junction has a large inner voltage-dependent surface area that is variable as a function of the voltage applied to the first main connection and the second main connection. When the voltage applied is 10 V, the switching transistor is characterized by a first product of a switch-on resistance Ron and a gate charge Qgtot, the first product given by: Ron*Qgtot/10 V≦2.5 ns. When the voltage applied is 400 V, the switching transistor is characterized by a second product of the switch-on resistance Ron and the energy Eds stored in a drain-source capacitance, the second product given by Ron*Eds≦1.6 V2 μs.
In other words, the switch mode power supply has a switching transistor with a first and a second main connection forming a load path. A load is connected in series with the load path of the switching transistor. The switching transistor has a semiconductor body with a semiconductor layer of the first conductance type into which continuous regions of the second conductance type are incorporated which, interacting with the semiconductor body at the reverse-biased pn-junction which is formed, create a large inner, voltage-dependent source area. The surface area is varied as a function of a voltage applied to the main connections.
In accordance with an added feature of the invention, the switching transistor is in the form of a MOSFET. The output capacitance values for low drain-source voltages (for example less than 45 V for high-voltage MOSFETs) are very high, with this capacitance decreasing, as the drain-source voltage rises, to values which are so low that the energy stored in the transistor assumes very low values.
In accordance with an additional feature of the invention, the voltage-dependent surface area of the pn-junction is reduced as the voltage applied is increased.
In accordance with another feature of the invention, an amount of charge in the switching transistor, which is calculated via a line integral along a line at right angles to the pn-junction, remains below a material-specific breakdown charge.
In accordance with a further feature of the invention, the continuous drain region of the second conductance type and the continuous source region of the second conductance type are configured in a structure selected from the group consisting of a vertical structure and a lateral structure.
In accordance with a concomitant feature of the invention, a charge storage device is connected in parallel with the load path of the switching transistor.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a switch mode power supply with reduced switching losses, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a basic functional unit of a switch mode power supply;
FIGS. 2a and 2b show current and voltage profiles for exiting switch mode power supplies;
FIG. 2c shows current and voltage profiles for the invention switch mode power supply disclosed herein;
FIG. 3 shows a section through a MOSFET that can be used for the inventive switch mode power supply;
FIGS. 4a to 4c shows possible layouts for the MOSFET shown in FIG. 3;
FIG. 5 shows the profile of the drain-source capacitance Cds as a function of the drain-source voltage Uds for a standard MOSFET and for the inventive switching transistor; and
FIGS. 6a to 6c show a plan view through a MOSFET which can be used for the inventive switch mode power supply and in which the reverse-biased pn-junction is shown for various voltages.
 DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring now to the figures of the drawing in detail and first, particularly, to FIG. 1 thereof, there is schematically shown the basic structure of a switch mode power supply (without the capacitor 4 and the free wheeling diode 3) with a power switch 1 that is designed according to the invention and that is in the form of a MOSFET with, for example, an inductive load 2 is connected in series.
In order to reduce the switching losses in comparison to the prior art, the MOSFET of the power switch 1 specifically has the following characteristics:
    • (a) low gate charge for a high switching speed with a low driver power;
    • (b) low energy content in the output capacitance for low switching-on losses; and
    • (c) “no-loss” delay of the voltage rise after switching off.
None of the currently available power switches can satisfy the characteristics (b) and (c) at the same time. However, this can actually be achieve by the present invention since, as is shown in FIG. 2c, the switching transistor or power switch 1 has an extremely non-linear profile of the drain-source capacitance Cds. Very high values for Cds for low drain-source voltages Uds result in the desired delay of the voltage rise after switching off the MOSFET channel. The load current thus changes from initially being the channel current Ich to being the charge current of the output capacitance Coss. The delay in the voltage rise also makes it possible to achieve virtually zero-loss switching-off with a finite driver power and thus a finite switching-off rate.
In the switching transistor according to the invention, the drain-source capacitance Cds falls very rapidly to very low values as the drain-source value Uds rises, so that the energy stored in the drain-source capacitance Cds:
Eds(Umax)=∫o UmaxCds(U)·U·dU  (equation 1)
for the envisaged operation voltage remains less than with conventional MOSFETs. In this way, not only are the switching-off losses reduced, but also the switching-on losses when switching with voltage applied. In the case of tuned circuits, the small amount of energy in the drain-source capacitance Cds of the power switch in the switching transistor according to the invention advantageously reduces the communication energy required for zero voltage switching.
In comparison with present-day MOSFETs, a transistor with optimized power loses has particularly low products of the switch-on resistance Rdx(on) and the gate charge Qgtot, and also of the switch-on resistance and stored energy Eds, and in consequence, achieves extraordinarily low switching losses. For example, for 600 V MOSFETs, the product Ron*Eds (400 V) is preferably ≦1.6 V2 μs and the product Ron*Qgtot (10 V)/10 V is preferably ≦2.5 ns. The bracketed expressions (400 V) etc. indicate the applied voltages.
The extremely non-linear capacitance profile of the power switch 1 furthermore leads to a soft switching edge, which has few harmonics an is advantageous from the EMC point of view. As illustrated in FIG. 2c, the switching edge is advantageously “rounded” but is not excessively extended, as would be the case if a discrete capacitor (curve 7) or a conventional MOSFET with a high output capacitance (curve 8) were to be used. Lengthening of the switching edges in general limits the minimum duty ration, and in consequence leads to problems in the system during low-load operation.
The stated non-linear capacitance profile can be noticed particularly advantageously in bridge circuits since in this case—because of the very high capacitance values for low drain-source voltages—both the lower and the upper “corner” of the voltage edge are rounded.
To a first approximation, the output capacitance Coss corresponds to the capacitance Cds and Cgd connected in parallel. In this case, Cgd should remain as low as possible in order to minimize the reaction (“Miller” effect).
The desired high value of the drain-source capacitance Cds can be achieved in a power switch by deliberately increasing the surface area of the reverse-biased pn-junction. Technically speaking, structures such as this can be produced by inserting, for example, the p-conductive regions in the n-conductive drift path of the semiconductor power switch. The reverse-biased pn-junction must in this case have a continuous inner surface area, that is to say all of the p-regions must be conducively connected to one another. The majority of the output capacitance in such a configuration results from the drain-source capacitance. In order to keep the amount of energy stored in the power switch as low as possible, the output capacitance must assume very low values at high voltages, as shown in Equation 1.
In MOSFETs, there is admittedly a capacitance reduction, which is inversely proportional to the square root of the drain-source voltage Uds and reflects the increases (when considered in one dimension) in the width of the space-charge zone.
However, it is necessary to reduce the surface area of the reverse-biased pn-junction as the voltage rises if a considerably more rapid reduction in the drain-source capacitance Cds is to be achieved. If the doping and dimensions of the p-regions incorporated in the drift zone are dimensioned such that their charge is depleted by the opposite charge of the surrounding semiconductor material by transverse electrical fields at low voltages, then this results in a rapid reduction in the surface area as the voltage rises. The dimensioning must in this case be such that the line integral of the doping of the p-regions at right angles to its surface remains below the material-specific breakdown charge. The depletion voltage in this case becomes less, the shorter the distances between the semiconductor regions of opposite conductance type.
The above condition does not demand complete compensation for the basic material, and in fact, the principle also operates with incomplete compensation. In the event of overcompensation, on the other hand, an additional vertical electrical field is required in order to deplete the p-regions. The steep drop in the drawin-source capacitance is thus moved to higher voltages.
The abovementioned principle can likewise be used in the field of low blocking-capability transactors.
FIG. 3 now shows the inventive MOSFET which can be used as a power switch in a switch mode power supply.
A silicon semiconductor layer 10, which is, for example, between 4 and 50 μm thick is located on an n+-doped silicon semiconductor substrate 9. A p−-conductive source zone 11 and a p−-conductive drain zone 12, which each have a penetration depth of about 2 μm, are embedded in the silicon semiconductor layer 10. Underneath the source zone 11 and drain zone 12, a p- conductive region 13 or 14, respectively, with a penetration depth of 4 to 40 mm is formed, so that it ends at a distance of about 1 to 10 mm from the semiconductor substrate 9. The higher values above apply to high-voltage components, while the lower values are appropriate for low-voltage components.
Another gate electrode 15 is provided between the source and drain zones 11 and 12, respectively.
The indicated conductance types can, of course, also in each case be reversed. It is also possible to use lateral structures instead of vertical structures.
FIGS. 4A to 4C show further possible structures for the p-conductive regions 13 and 14: these are finely structured and are each composed of, for example, narrow plates (FIG. 4A) which may be continuous in a meandering shape; columns configured in a square or hexagon (FIG. 4B); or leaf-shaped configurations configured in squares or hexagons (FIG. 4C), which are connected to one another via a common electrode.
The configuration of n-conductive continuous regions 14 in a p-conductive semiconductor layer 10 is shown in a plan view in FIGS. 6A to 6C.
In the exemplary embodiments, the regions 13, 14 are in the form of strips. The MOSFET is shown laterally in the illustration. The reference numeral 12 denotes the drain zone, and the reference number 11 denotes the source zone. The gate electrode 15 is indicated by dashed lines. The n-conductive regions 14 are incorporated in the p-conductive semiconductor layer 10. The profile of the space-charge zone for various drain-source voltages is also shown in FIGS. 6A to 6C. The higher the drain-source voltage, the broader is the space-charge zone. In consequence, the surface area of the reverse-biased pn-junction is reduced as the voltage rises.
The invention makes it possible to produce a switch mode power supply with reduced switching losses using a MOSFET power switch 1. The output capacitance Cds of the MOSFET power switch 1 falls quickly to low values as a function of the drain-source voltage Uds, such that a load current Id applied to the MOSFET power switch 1 changes from initially being the channel current of the MOSFET power stitch 1 to being the charge current of the output capacitance Coss.
FIG. 5 shows the considerable advantages which can be achieved with the present invention, using an example of a 600 V switching transistor with an active chip area of 20 mm2 (190 mΩ): at low drain-source voltages Uds, below about 40 V, the drain-source capacitance is considerably greater (see curve B) than with the prior art (see curve A) while, at higher drain-source voltages, the drain-source capacitance of the switching transistor according to the invention is considerably less than the corresponding values for the existing transistor.

Claims (12)

1. A switch mode power supply, comprising:
a switching transistor having a load path formed by a first main connection and a second main connection, said first main connection and said second main connection for receiving a voltage applied thereto, said switching transistor including a semiconductor body with a semiconductor layer of a first conductance type forming a drift area ;
a load connected in series with said load path of said switching transistor;
a continuous drain region of a second conductance type incorporated into said drift area semiconductor layer and connected to said first main connection;
a continuous source region of the second conductance type incorporated into said drift area semiconductor layer and connected to said second main connection;
a reverse-biased pn-junction produced by an interaction between said semiconductor body layer and said continuous drain region and between said semiconductor body layer and said continuous source region;
said reverse-biased pn-junction having a large inner voltage-dependent surface area that is variable as a function of the voltage applied to said first main connection and said second main connection;
when the gate to source voltage applied is 10 V, said switching transistor is characterized by a first product of a switch-on resistance Ron and a gate charge Qgtot, the first product given by: Ron*Qgtot/10 V≦2.5 ns; and
when the drain to source voltage applied is 400 V, said switching transistor is characterized by a second product of the switch-on resistance Ron and energy Eds stored in a drain-source capacitance, the second product given by Ron*Eds≦1.6 V2 μs.
2. The switch mode power supply according to claim 1, wherein said voltage-dependent surface area of said pn-junction is reduced as the voltage applied is increased.
3. The switch mode power supply according to claim 2, wherein an amount of charge in said switching transistor, which is calculated via a line integral along a line at right angles to said pn-junction, remains below a material-specific breakdown charge.
4. The switching transistor according to claim 3, wherein said continuous drain region of said second conductance type and said continuous source region of said second conductance type are configured in a structure selected from the group consisting of a vertical structure and a lateral structure.
5. The switch mode power supply according to claim 1, comprising a charge storage device connected in parallel with said load path of said switching transistor.
6. The switch mode power supply according to claim 1, wherein the drain region and the semiconductor layer comprise areas which are nested in each other.
7. The switch mode power supply according to claim 6, wherein the nested areas form strips of alternating conductivity type.
8. The switch mode power supply according to claim 1, wherein the drain region and/or the source region have a meandering shape.
9. The switch mode power supply according to claim 1, wherein the drain region and/or the source region each comprise a plurality of columns.
10. The switch mode power supply according to claim 9, wherein the columns have a square shape.
11. The switch mode power supply according to claim 9, wherein the columns have a hexagon shape.
12. The switch mode power supply according to claim 9, wherein the columns are leaf-shaped.
US10/846,998 1998-09-11 2004-05-14 Switch mode power supply with reduced switching losses Expired - Lifetime USRE40352E1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/846,998 USRE40352E1 (en) 1998-09-11 2004-05-14 Switch mode power supply with reduced switching losses

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19841754A DE19841754A1 (en) 1998-09-11 1998-09-11 Switching transistor with reduced switching losses
PCT/DE1999/002874 WO2000016407A2 (en) 1998-09-11 1999-09-10 Switching transistor with reduced switching losses
US09/804,325 US6388287B2 (en) 1998-09-11 2001-03-12 Switch mode power supply with reduced switching losses
US10/846,998 USRE40352E1 (en) 1998-09-11 2004-05-14 Switch mode power supply with reduced switching losses

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/804,325 Reissue US6388287B2 (en) 1998-09-11 2001-03-12 Switch mode power supply with reduced switching losses

Publications (1)

Publication Number Publication Date
USRE40352E1 true USRE40352E1 (en) 2008-06-03

Family

ID=7880725

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/804,325 Ceased US6388287B2 (en) 1998-09-11 2001-03-12 Switch mode power supply with reduced switching losses
US10/846,998 Expired - Lifetime USRE40352E1 (en) 1998-09-11 2004-05-14 Switch mode power supply with reduced switching losses

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09/804,325 Ceased US6388287B2 (en) 1998-09-11 2001-03-12 Switch mode power supply with reduced switching losses

Country Status (5)

Country Link
US (2) US6388287B2 (en)
EP (1) EP1119876A2 (en)
JP (1) JP2002525853A (en)
DE (1) DE19841754A1 (en)
WO (1) WO2000016407A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860136B2 (en) * 2012-12-03 2014-10-14 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
US9698768B2 (en) 2015-07-14 2017-07-04 Infineon Technologies Austria Ag System and method for operating a switching transistor

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19840032C1 (en) * 1998-09-02 1999-11-18 Siemens Ag Semiconductor device for compensation element
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6710403B2 (en) * 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6713813B2 (en) 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6825514B2 (en) * 2001-11-09 2004-11-30 Infineon Technologies Ag High-voltage semiconductor component
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
US7033891B2 (en) * 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (en) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 Superjunction semiconductor device
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
JP4832731B2 (en) 2004-07-07 2011-12-07 株式会社東芝 Power semiconductor device
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
KR20120127677A (en) 2005-04-06 2012-11-22 페어차일드 세미컨덕터 코포레이션 Trenched-gate field effect transistors and methods of forming the same
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
CN103762243B (en) 2007-09-21 2017-07-28 飞兆半导体公司 Power device
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
DE102008032876B4 (en) 2008-07-14 2010-04-08 Sew-Eurodrive Gmbh & Co. Kg Method, circuit arrangement and bridge circuit
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413237A (en) 1980-03-14 1983-11-01 Sony Corporation Sawtooth wave oscillator
US5216275A (en) 1991-03-19 1993-06-01 University Of Electronic Science And Technology Of China Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
US5296723A (en) 1991-07-12 1994-03-22 Matsushita Electric Works, Ltd. Low output capacitance, double-diffused field effect transistor
US5438215A (en) * 1993-03-25 1995-08-01 Siemens Aktiengesellschaft Power MOSFET
US5644148A (en) 1992-09-15 1997-07-01 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
DE19702102A1 (en) * 1996-01-22 1997-07-24 Fuji Electric Co Ltd Semiconductor device and method of manufacturing the semiconductor device
WO1997029518A1 (en) 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Field effect controlled semiconductor component
US6057558A (en) 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
US6124628A (en) 1995-04-12 2000-09-26 Fuji Electric Co., Ltd. High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
US6239466B1 (en) 1998-12-04 2001-05-29 General Electric Company Insulated gate bipolar transistor for zero-voltage switching
US6380569B1 (en) * 1999-08-10 2002-04-30 Rockwell Science Center, Llc High power unipolar FET switch
US7005353B2 (en) * 2002-08-23 2006-02-28 Fairchild Semiconductor Corporation Method for improved MOS gating to reduce miller capacitance and switching losses

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413237A (en) 1980-03-14 1983-11-01 Sony Corporation Sawtooth wave oscillator
US5216275A (en) 1991-03-19 1993-06-01 University Of Electronic Science And Technology Of China Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
US5296723A (en) 1991-07-12 1994-03-22 Matsushita Electric Works, Ltd. Low output capacitance, double-diffused field effect transistor
US5644148A (en) 1992-09-15 1997-07-01 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
US5438215A (en) * 1993-03-25 1995-08-01 Siemens Aktiengesellschaft Power MOSFET
US6124628A (en) 1995-04-12 2000-09-26 Fuji Electric Co., Ltd. High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
US6097063A (en) 1996-01-22 2000-08-01 Fuji Electric Co., Ltd. Semiconductor device having a plurality of parallel drift regions
DE19702102A1 (en) * 1996-01-22 1997-07-24 Fuji Electric Co Ltd Semiconductor device and method of manufacturing the semiconductor device
WO1997029518A1 (en) 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Field effect controlled semiconductor component
US6057558A (en) 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
US6239466B1 (en) 1998-12-04 2001-05-29 General Electric Company Insulated gate bipolar transistor for zero-voltage switching
US6380569B1 (en) * 1999-08-10 2002-04-30 Rockwell Science Center, Llc High power unipolar FET switch
US7005353B2 (en) * 2002-08-23 2006-02-28 Fairchild Semiconductor Corporation Method for improved MOS gating to reduce miller capacitance and switching losses

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Fujihira T., et al.: "Theory of Semiconductor Superjunction Devices"; Japanese Journal of Applied Physics, Part 1, vol. 36, No. 10; pp. 6254-6262 Oct. 1997.
Zhang, M. et al.: "Design considerations and performance evaluations of synchrononous rectification in flyback converters"; APEC. Annual Applied Power Electronics Conf. and Expo; New York; pp. 623-630 Feb. 23, 1997.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860136B2 (en) * 2012-12-03 2014-10-14 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
US9698768B2 (en) 2015-07-14 2017-07-04 Infineon Technologies Austria Ag System and method for operating a switching transistor

Also Published As

Publication number Publication date
JP2002525853A (en) 2002-08-13
US6388287B2 (en) 2002-05-14
WO2000016407A3 (en) 2000-11-09
EP1119876A2 (en) 2001-08-01
WO2000016407A2 (en) 2000-03-23
US20010050549A1 (en) 2001-12-13
DE19841754A1 (en) 2000-03-30

Similar Documents

Publication Publication Date Title
USRE40352E1 (en) Switch mode power supply with reduced switching losses
US6388286B1 (en) Power semiconductor devices having trench-based gate electrodes and field plates
US6764889B2 (en) Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes
US5616945A (en) Multiple gated MOSFET for use in DC-DC converter
US6664590B2 (en) Circuit configuration for load-relieved switching
US20180375432A1 (en) Trench mosfet having an independent coupled element in a trench
US7759696B2 (en) High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same
US7700970B2 (en) Integrated power device having a start-up structure
Korec Low Voltage Power MOSFETs: Design, Performance and Applications
US10950691B2 (en) Power converter circuit having a controller for generating a drive signal for driving an electronic switch with high avalanche robustness
Siemieniec et al. A new power MOSFET technology achieves a further milestone in efficiency
KR20230170590A (en) Integrated resistor-transistor-capacitor snubber
US7038295B2 (en) DC/DC converter with depletion mode compound semiconductor field effect transistor switching device
US7005761B2 (en) Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configuration
Stückler et al. 600V CoolMOS™ C7 Design Guide
Parisi et al. MDmesh??? DM6: The latest Super-junction MOSFET technology with improved fast recovery diode
Santos et al. Breakdown voltage improvement of standard MOS technologies targeted at smart power
Mazzer et al. The Next Step in Power MOSFET Technology Enables Further Increase in Power Supply Efficiencies
US20230208301A1 (en) Electronic circuit and buck converter including the electronic circuit
WO2006038201A2 (en) Power semiconductor device and corresponding circuit
Song et al. More than an Evolution: a New Power MOSFET Technology for Higher Efficiency of Power Supplies
Siemieniec et al. Boosting efficiency in resonant converters by the use of a new advanced power MOSFET technology
Siemieniec et al. Power device solutions for highly efficient power supplies
JP2666001B2 (en) Charge limiting diode
Siemieniec et al. New Power MOSFET and their use in Intermediate Bus Converters

Legal Events

Date Code Title Description
AS Assignment

Owner name: INFINEON TECHNOLOGIES AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SIEMENS AKTIENGESELLSCHAFT;REEL/FRAME:019721/0284

Effective date: 20070820

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12