USRE41340E1 - Pinned photodiode photodetector with common buffer transistor and binning capability - Google Patents
Pinned photodiode photodetector with common buffer transistor and binning capability Download PDFInfo
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- USRE41340E1 USRE41340E1 US11/524,495 US52449506A USRE41340E US RE41340 E1 USRE41340 E1 US RE41340E1 US 52449506 A US52449506 A US 52449506A US RE41340 E USRE41340 E US RE41340E
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- Prior art keywords
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- integrators
- photodiode
- integrator
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- 238000000034 method Methods 0.000 claims description 28
- 239000000969 carrier Substances 0.000 claims description 6
- 230000010363 phase shift Effects 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims 5
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/487—Extracting wanted echo signals, e.g. pulse detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Definitions
- Certain applications require measuring aspects that are based on the speed of light.
- range finding can be carried out using optics.
- An optical signal is sent.
- the reflection therefrom is received.
- the time that it takes to receive the reflection of the optical signal gives an indication of the distance.
- the so called lock-in technique uses an encoded temporal pattern as a signal reference.
- the device locks into the received signal to find the time of receipt.
- noise can mask the temporal pattern.
- CCDs are well known to have relatively large power consumption.
- the present application describes a special kind of lock in detector formed using CMOS technology. More specifically, a lock in detector is formed from a pinned photodiode. The photodiode is modified to enable faster operation.
- the pinned photodiode provides virtually complete charge transfer readout.
- Fast separation of the photo-generated carriers is obtained by separating the diode into smaller sub-parts and summing the output values of the subparts to obtain an increased composite signal.
- FIG. 1 shows a basic block diagram of the system
- FIG. 2 shows a block diagram of the multiple photodiode parts
- FIG. 3 shows a block diagram of the system as used in range finding
- FIG. 4a and 4b show pixel layouts
- FIG. 5 shows a cross section of the pinned photodiode.
- the present application uses a special, multiple output port pinned photodiode as the lock in pixel element.
- the photodiode is preferably part of a CMOS active pixel image sensor, of the type described in U.S. Pat. No. 5,471,505 5 , 471 , 515 .
- the system preferably includes in-pixel buffer transistors and selection transistors, in addition to the CMOS photodetector.
- FIG. 1 shows a pinned photodiode with four output ports, labeled as out 1 -out 4 .
- Each of the output ports is used to receive a reflection for a specified time duration.
- Each output becomes a “bin”. The counting of the amount of information in the bins enables determination of the reflection time, and hence the range.
- Pinned photodiodes are well known in the art and described in U.S. Pat. No. 5,904,493.
- a pinned photodiode is also known as a hole accumulation diode or HAD, or a virtual phase diode or VP diode.
- Advantages of these devices are well known in the art. They have small dark current due to suppression of surface generation. They have good quantum efficiency since there are few or no polysilicon gates over the photosensitive region. Pinned photodiodes can also be made into smaller pixels because they have fewer gates.
- FIG. 1 The basic structure of the pinned photodiode lock in pixel is shown in FIG. 1 .
- Four switched integrators are formed respectively at four output ports. Each gate is enabled during a specified period.
- the different integrators integrate carriers accumulated during the different periods.
- the first integrator accumulates carriers between 0 and ⁇ /2, the second between ⁇ /2 and ⁇ , the third between ⁇ and 3 ⁇ /2 and the fourth between 3 ⁇ /2 and 2 ⁇ time slots.
- phase shift of the detected light is given by arctan ⁇ (L 1 ⁇ L 3 )/(L 2 ⁇ L 4 ) ⁇ , where L 1 , L 2 , L 3 and L 4 are the amplititudes of the samples from the respective first, second, third and fourth integrators. These four phases are obtained from the four outputs of the photodiode.
- the first pinned photodiode 100 is connected to an output drain 102 via gate 1 , element 104 . This receives the charge for the first bin. Similarly, gates 2 , 3 and 4 are turned on to integrate/bin from the second, third and fourth periods.
- the present system divides the one large photodiode into a number of smaller diodes, each with multiple output ports.
- FIG. 2 shows the system.
- a number of subpixels are formed. Each includes a number of pinned photodiodes 200 , each with four ports. Each of the corresponding ports are connected together in a way that allows summing the outputs of the photodiodes. For example, all the gate 1 control lines are connected together as shown. The outputs from all the port 1 s are also summed, and output as a simple composite output. Similarly, ports 2 , 3 and 4 's are all summed.
- FIG. 3 shows the circuit and driving waveforms for the system when used as a range finder.
- a pulse generator drives selection of the active output. Each time period is separately accumulated, and output. If a 40 MHZ pulse generator is used, 25 ns resolution can be obtained.
- FIGS. 4A and 4B show representative pixel layouts.
- FIG. 4A shows a 6 by 6 square micron pixel layout while FIG. 4B shows an 81 ⁇ 2 by 81 ⁇ 2 micron pixel layout. In both Figures, four outputs are shown.
- FIG. 5 shows a cross sectional potential diagram of an exemplary pinned photodiode.
- the generator carrier has a time of flight within this limit. This resolution time constraints the size of the detector.
- the characteristic diffusion time in a semiconductor device is L 2 /D, where D is the diffusion coefficient. This time originates from the continuity equation and the diffusion equation, and defines how soon the steady state will be established in the area of size L.
- the characteristic size of the pinned photodiode could be less than 5 microns.
Abstract
Description
arctan┌(L1−L3)/(L2−L4)┐,
where L1, L2, L3 and L4 are the amplititudes of the samples from the respective first, second, third and fourth integrators. These four phases are obtained from the four outputs of the photodiode.
Claims (26)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/524,495 USRE41340E1 (en) | 1998-08-19 | 2006-09-21 | Pinned photodiode photodetector with common buffer transistor and binning capability |
US12/413,626 USRE42292E1 (en) | 1998-08-19 | 2009-03-30 | Pinned photodiode photodetector with common pixel transistors and binning capability |
US13/343,843 USRE44482E1 (en) | 1998-08-19 | 2012-01-05 | CMOS active image sensor with common pixel transistors and binning capability |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9713598P | 1998-08-19 | 1998-08-19 | |
US09/378,565 US6239456B1 (en) | 1998-08-19 | 1999-08-19 | Lock in pinned photodiode photodetector |
US09/867,846 US6794214B2 (en) | 1998-08-19 | 2001-05-29 | Lock in pinned photodiode photodetector |
US11/524,495 USRE41340E1 (en) | 1998-08-19 | 2006-09-21 | Pinned photodiode photodetector with common buffer transistor and binning capability |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US09/378,565 Continuation US6239456B1 (en) | 1998-08-19 | 1999-08-19 | Lock in pinned photodiode photodetector |
US09/867,846 Reissue US6794214B2 (en) | 1998-08-19 | 2001-05-29 | Lock in pinned photodiode photodetector |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
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US09/867,846 Division US6794214B2 (en) | 1998-08-19 | 2001-05-29 | Lock in pinned photodiode photodetector |
US12/413,626 Division USRE42292E1 (en) | 1998-08-19 | 2009-03-30 | Pinned photodiode photodetector with common pixel transistors and binning capability |
US13/740,157 Continuation US20130243765A1 (en) | 2002-08-15 | 2013-01-12 | Chimeric protein |
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USRE41340E1 true USRE41340E1 (en) | 2010-05-18 |
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US09/378,565 Expired - Lifetime US6239456B1 (en) | 1998-08-19 | 1999-08-19 | Lock in pinned photodiode photodetector |
US09/867,846 Ceased US6794214B2 (en) | 1998-08-19 | 2001-05-29 | Lock in pinned photodiode photodetector |
US10/459,595 Expired - Lifetime US6750485B2 (en) | 1998-08-19 | 2003-06-12 | Lock in pinned photodiode photodetector |
US11/524,495 Expired - Lifetime USRE41340E1 (en) | 1998-08-19 | 2006-09-21 | Pinned photodiode photodetector with common buffer transistor and binning capability |
US12/413,626 Expired - Lifetime USRE42292E1 (en) | 1998-08-19 | 2009-03-30 | Pinned photodiode photodetector with common pixel transistors and binning capability |
US13/343,843 Expired - Lifetime USRE44482E1 (en) | 1998-08-19 | 2012-01-05 | CMOS active image sensor with common pixel transistors and binning capability |
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US09/378,565 Expired - Lifetime US6239456B1 (en) | 1998-08-19 | 1999-08-19 | Lock in pinned photodiode photodetector |
US09/867,846 Ceased US6794214B2 (en) | 1998-08-19 | 2001-05-29 | Lock in pinned photodiode photodetector |
US10/459,595 Expired - Lifetime US6750485B2 (en) | 1998-08-19 | 2003-06-12 | Lock in pinned photodiode photodetector |
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US12/413,626 Expired - Lifetime USRE42292E1 (en) | 1998-08-19 | 2009-03-30 | Pinned photodiode photodetector with common pixel transistors and binning capability |
US13/343,843 Expired - Lifetime USRE44482E1 (en) | 1998-08-19 | 2012-01-05 | CMOS active image sensor with common pixel transistors and binning capability |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE44482E1 (en) | 1998-08-19 | 2013-09-10 | Round Rock Research, Llc | CMOS active image sensor with common pixel transistors and binning capability |
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Also Published As
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US6239456B1 (en) | 2001-05-29 |
US20030213984A1 (en) | 2003-11-20 |
US6794214B2 (en) | 2004-09-21 |
USRE44482E1 (en) | 2013-09-10 |
US20010052605A1 (en) | 2001-12-20 |
US6750485B2 (en) | 2004-06-15 |
USRE42292E1 (en) | 2011-04-12 |
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