USRE42530E1 - Device using a metal-insulator transition - Google Patents
Device using a metal-insulator transition Download PDFInfo
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- USRE42530E1 USRE42530E1 US11/234,816 US23481605A USRE42530E US RE42530 E1 USRE42530 E1 US RE42530E1 US 23481605 A US23481605 A US 23481605A US RE42530 E USRE42530 E US RE42530E
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- 239000012212 insulator Substances 0.000 title claims abstract description 198
- 230000007704 transition Effects 0.000 title claims abstract description 92
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- 230000005298 paramagnetic effect Effects 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 24
- 239000000969 carrier Substances 0.000 claims description 23
- 229910018293 LaTiO3 Inorganic materials 0.000 claims description 22
- 229910000458 iridium tetroxide Inorganic materials 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910001927 ruthenium tetroxide Inorganic materials 0.000 claims description 22
- 229910010252 TiO3 Inorganic materials 0.000 claims description 19
- 229910002113 barium titanate Inorganic materials 0.000 claims description 11
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 8
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 2
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 2
- 230000007423 decrease Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 3
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- 229910002282 La2CuO4 Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/03—Devices using Mott metal-insulator transition, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Definitions
- the present invention relates to a field effect transistor, and more particularly, to a switching field effect transistor (FET) using abrupt metal-insulator transition.
- FET switching field effect transistor
- MOSFETs Metal Oxide Semiconductor Field Effect Transistors
- a MOSFET has two pn junction structures showing linear characteristics at a low drain voltage as a basic structure.
- a channel length is reduced to about 50 nm or below as the degree of integration of a device increases, an increase in a depletion layer changes the concentration of a carrier and an decrease of the depth of the gate insulator remarkably makes current flowing between a gate and a channel.
- Mott FETs perform an ON/OFF operation according to metal-insulator transition and do not have a depletion layer, thereby remarkably improving the degree of integration of a device and achieving a higher-speed switching characteristic than MOSFETs.
- ⁇ denotes the dielectric constant of a gate insulator
- e denotes a basic charge
- d denotes the thickness of the gate insulator
- V g denotes a gate voltage
- La 2 CuO 4 which is one of the materials falling under the group Mott-Hubbard insulator
- LSCO La 2-x Sr x CuO 4
- the dielectric constant is too great, the fatigue characteristics of a dielectric sharply worsens during a high-speed switching operation, thereby reducing the life of a transistor.
- there is a limit in decreasing the thickness of the gate insulator due to limitations in fabrication processes.
- the gate voltage increases, power consumption also increases, which makes it difficult to be the transistor with a low power.
- a field effect transistor including a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes add therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
- the substrate is formed of SrTiO 3 .
- the Mott-Brinkman-Rice insulator is formed of LaTiO 3 , YTiO 3 , Ca 2 RuO 4 , Ca 2 IrO 4 , V 2 O 3 , (Cr x V 1-x ) 2 O 3 , CaVO 3 , SrVO 3 and YVO 3 .
- the dielectric layer is formed of Ba 1-x Sr x TiO 3 or dielectric materials.
- the source electrode and the drain electrode are separated from each other by the dielectric layer.
- FIGS. 1A and 1B are diagrams showing atomic lattices within a Mott-Brinkman-Rice insulator having abrupt metal-insulator transition under predetermined conditions;
- FIG. 2 is a graph showing the effective mass of a carrier versus the band filling factor of a Mott-Brinkman-Rice insulator of LaTiO 3 (LTO);
- FIG. 3 is a graph showing electrical conductance ⁇ versus the band filling factor of a Mott-Brinkman-Rice insulator of LaTiO 3 (LTO).
- FIG. 4 is a sectional view of a switching field effect transistor according to the present invention.
- FET field effect transistor
- FIGS. 1A and 1B are diagrams showing atomic lattices within a Mott-Brinkman-Rice insulator having abrupt metal-insulator transition under predetermined conditions.
- the Mott-Brinkman-Rice insulator that is, a paramagnetic insulator in reference “W. F. Brinkman, T. M. Rice, Phys. Rev. B2, 4302 (1970)”, is different from an antiferromagnetic insulator of the Mott-Hubbard insulator used by IBM group.
- the Mott-Brinkman-Rice insulator 100 is abruptly transformed into a metal due to a decrease in the Coulomb interaction and is thus changed into a non-uniform metallic system having both a metal phase and an insulator phase.
- Such abrupt transition that is, first-order transition is well described in the reference “Hyun-Tak Kim in Physica C 341-348, 259 (2000); http://xxx.lanl.gov/abs/cond-mat/0110112”. (2000).”
- the Mott-Brinkman-Rice insulator 100 is changed into a non-uniform metal system because the number of electrons becomes less than the number of atoms due to the addition of holes.
- the Mott-Brinkman-Rice insulator 100 locally becomes a strong correlation metal (denoted by M in FIG. 1B ) complying with the strong correlation metal theory of Brinkman and Rice.
- the strong correlation metal theory is well disclosed in the reference “W. F. Brinkman, T. M. Rice, Phys. Rev. B2, 4302 (1970)”.
- Such a strong correlation metal has an electron structure in which one atom has one electron, that is, a metallic electron structure in which an s energy band is filled with one electron.
- Equation (2) the effective mass m*/m of a carrier is defined by Equation (2).
- Equation (3) the effective mass m*/m of a carrier in the entire metal system of FIG. 1B can be expressed by Equation (3).
- ⁇ is a band filling factor and can be expressed by a ratio of the number of electrons (or carriers) to the number of atoms.
- La +3 is substituted for Sr +2 in an insulator of SrTiO 3 (STO) when the material is doped with electrons
- Sr +2 is substituted for La +3 in a Mott-Brinkman-Rice insulator of LaTiO 3 (LTO) when the material is doped with holes.
- FIG. 2 is a graph showing the effective mass of a carrier versus the ratio of Sr +2 holes added to a Mott-Brinkman-Rice insulator of LaTiO 3 (LTO), that is, a band filling factor ⁇ .
- LTO LaTiO 3
- FIG. 3 is a graph showing electrical conductance ⁇ versus the ratio of Sr +2 holes added to a Mott-Brinkman-Rice insulator of LaTiO 3 (LTO), that is, a band filling factor ⁇ .
- ⁇ HK denotes the threshold electrical conductance of a metal.
- FIG. 4 is a sectional view of a FET using abrupt metal-insulator transition according to the present invention.
- a Mott-Brinkman-Rice insulator 410 of LaTiO 3 (LTO) is disposed on a substrate 400 of SrTiO 3 (STO).
- the Mott-Brinkman-Rice insulator 410 may be formed of LaTiO 3 , YTiO 3 , h-BaTiO 3 , Ca 2 RuO 4 , Ca 2 IrO 4 , V 2 O 3 , (Cr x V 1-x ) 2 O 3 , CaVO 3 , SrVO 3 and YVO 3 .
- the dielectric (or ferroelectric) layer 420 of Ba 1-x Sr x TiO 3 (BSTO) makes holes to add into the Mott-Brinkman-Rice insulator 410 so that abrupt metal-insulator transition can occur in the Mott-Brinkman-Rice insulator 410 , thereby forming a conductive channel 415 .
- a gate electrode 430 is formed on the dielectric layer 420 to apply a predetermined voltage to the dielectric layer 420 .
- a source electrode 440 is formed on a first portion of the Mott-Brinkman-Rice insulator 410
- a drain electrode 450 is formed on a second portion of the Mott-Brinkman-Rice insulator 410 .
- the source electrode 440 and the drain electrode 450 are separated by the dielectric layer 420 .
- a predetermined voltage is applied to the source electrode 440 and the drain electrode 450 , thereby generating a predetermined potential on the surface of the Mott-Brinkman-Rice insulator 410 of LaTiO 3 (LTO).
- a gate voltage is applied to the gate electrode 430 so that Sr +2 holes can flow from the dielectric layer 420 of Ba 1-x Sr x TiO 3 (BSTO) into a Mott-Brinkman-Rice insulator 410 at low concentration.
- BSTO Ba 1-x Sr x TiO 3
- the Mott-Brinkman-Rice insulator 410 undergoes abrupt metal-insulator transition, and the conductive channel 415 is formed.
- current flows between the source electrode 440 and the drain electrode 450 through the conductive channel 415 .
- the number of electrons in a metal region formed due to the abrupt metal-insulator transition is about 4 ⁇ 10 14 /cm 2 .
- This number of electrons is about at least 100 times of the number of electrons (about 10 12 /cm 2 ) in a channel of a usual Metal Oxide Semiconductor Field Effect Transistor (MOSFET), so a high current amplification can be achieved.
- MOSFET Metal Oxide Semiconductor Field Effect Transistor
- a hole concentration N hole is set to about 4 ⁇ 10 14 /cm 2 , and other variables, i.e., the dielectric constant ⁇ and the thickness “d” of the dielectric layer 420 are adjusted to the conditions of transistor fabrication, the gate voltage V g can be significantly decreased, so power consumption can be decreased.
- a transistor according to the present invention is referred to as a Mott-Gutzwiller-Brinkman-Rice-Kim (MGBRK) transistor in order to discriminate it from a Mott or Mott-Hubbard (MH) FET.
- MGBRK Mott-Gutzwiller-Brinkman-Rice-Kim
- a FET according to the present invention provides the following effects.
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Abstract
A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
Description
1. Field of the Invention
The present invention relates to a field effect transistor, and more particularly, to a switching field effect transistor (FET) using abrupt metal-insulator transition.
2. Description of the Related Art
Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been widely used as micro and super-speed switching transistors. A MOSFET has two pn junction structures showing linear characteristics at a low drain voltage as a basic structure. However, when a channel length is reduced to about 50 nm or below as the degree of integration of a device increases, an increase in a depletion layer changes the concentration of a carrier and an decrease of the depth of the gate insulator remarkably makes current flowing between a gate and a channel.
To overcome this problem, IBM institute has performed Mott FETs using the Mott-Hubbard insulator in a channel layer in reference “D. M. Newns, J. A. Misewich, C. C. Tsuei, A. Gupta, B. A. Scott, and A. Schrott, Appl. Phys. Lett. 73, 780 (1998)”. The Mott-Hubbard insulator undergoes a transition from an antiferromagnetic insulator to an metal. This transition is called the Mott-Hubbard metal-insulator transition in reference “J. Hubbard, Proc. Roy. Sci. (London) A276, 238 (1963), A281, 401 (1963)”. This is a continuous (or second order) phase transition. Unlike MOSFETs, Mott FETs perform an ON/OFF operation according to metal-insulator transition and do not have a depletion layer, thereby remarkably improving the degree of integration of a device and achieving a higher-speed switching characteristic than MOSFETs.
Since Mott-Hubbard FETs use continuous metal-insulator transition, charges used as carriers should be continuously added until the best metallic characteristics reach. Accordingly, the added charges must have a high concentration. Generally, charges N per unit area can be expressed by Equation (1).
Here, “∈” denotes the dielectric constant of a gate insulator, “e” denotes a basic charge, “d,” denotes the thickness of the gate insulator, and “Vg” denotes a gate voltage.
For example, in the case of La2CuO4, which is one of the materials falling under the group Mott-Hubbard insulator, when holes are added to La2CuO4, the characteristics of La2-xSrxCuO4(LSCO) appear, and a metal having best hole carriers at x=0.15 (15%) is obtained. Here, the added holes become carriers. Generally, x=0.15 is a high concentration, so if the N value increases, the dielectric constant of the gate insulator increases, the thickness of the gate insulator decreases, or the gate voltage increases. However, when the dielectric constant is too great, the fatigue characteristics of a dielectric sharply worsens during a high-speed switching operation, thereby reducing the life of a transistor. Moreover, there is a limit in decreasing the thickness of the gate insulator due to limitations in fabrication processes. In addition, when the gate voltage increases, power consumption also increases, which makes it difficult to be the transistor with a low power.
To solve the above-described problems, it is an object of the present invention to provide a switching field effect transistor using abrupt metal-insulator transition so that the field effect transistor shows metallic characteristics even if holes of a low concentration are added thereto.
To achieve the above object of the invention, there is provided a field effect transistor including a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes add therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
Preferably, the substrate is formed of SrTiO3.
Preferably, the Mott-Brinkman-Rice insulator is formed of LaTiO3, YTiO3, Ca2RuO4, Ca2IrO4, V2O3, (CrxV1-x)2O3, CaVO3, SrVO3 and YVO3.
Preferably, the dielectric layer is formed of Ba1-xSrxTiO3 or dielectric materials.
Preferably, the source electrode and the drain electrode are separated from each other by the dielectric layer.
The above object and advantages of the present invention will become more apparent by describing in detail a preferred embodiment thereof with reference to the attached drawings in which:
Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. The present invention is not restricted to the following embodiments, and many variations are possible within the spirit and scope of the present invention.
The following description concerns the operating principle of a field effect transistor (FET) according to the present invention.
Referring to FIG. 1A , when an atom has two electrons and the intensity U of the repulsive Coulomb interaction between the two electrons is the same as the maximum Coulomb energy Uc between the electrons, that is, U/Uc=k=1, the two electrons cannot exist in the atom together, so one of them moves to a neighboring atom and is bound to the neighboring atom. An insulator having such a bound and metallic electron structure is referred to as a Mott-Brinkman-Rice insulator 100.
If holes are added to the Mott-Brinkman-Rice insulator 100 at a very low concentration, the Mott-Brinkman-Rice insulator 100 is abruptly transformed into a metal due to a decrease in the Coulomb interaction and is thus changed into a non-uniform metallic system having both a metal phase and an insulator phase. Such abrupt transition, that is, first-order transition is well described in the reference “Hyun-Tak Kim in Physica C 341-348, 259 (2000); http://xxx.lanl.gov/abs/cond-mat/0110112”. (2000).” Here, the Mott-Brinkman-Rice insulator 100 is changed into a non-uniform metal system because the number of electrons becomes less than the number of atoms due to the addition of holes.
In this case, as shown in FIG. 1B , the intensity U of the repulsive Coulomb interaction becomes less than the maximum Coulomb energy Uc, that is, U/ Uc=k<1. As a result, the Mott-Brinkman-Rice insulator 100 locally becomes a strong correlation metal (denoted by M in FIG. 1B ) complying with the strong correlation metal theory of Brinkman and Rice. The strong correlation metal theory is well disclosed in the reference “W. F. Brinkman, T. M. Rice, Phys. Rev. B2, 4302 (1970)”. Such a strong correlation metal has an electron structure in which one atom has one electron, that is, a metallic electron structure in which an s energy band is filled with one electron.
In the metal region M of FIG. 1B , the effective mass m*/m of a carrier is defined by Equation (2).
Here, k<1 is satisfied, and abrupt metal-insulator transition occurs at a value within a range between k=1 and a certain value close to k=1. This theoretical equation is introduced in the reference “W. F. Brinkman, T. M. Rice, Phys. Rev. B2, 4302 (1970)”. The theory about a strong correlation was introduced in the reference “N. F. Mott, Metal-Insulator Transition, Chapter 3, (Taylor & Frances, 2nd edition, 1990) for the first time.
Meanwhile, the effective mass m*/m of a carrier in the entire metal system of FIG. 1B can be expressed by Equation (3).
Here, ρ is a band filling factor and can be expressed by a ratio of the number of electrons (or carriers) to the number of atoms. In this case, when k=1, there occurs a abrupt transition from a value close to ρ=1 to ρ=1. This theory is well described in the reference “Hyun-Tak Kim in Physica C 341-348, 259 (2000); http://xxx.lanl.gov/abs/cond-mat/0110112”. (2000).”
For example, in the case of a material of Sr1-xLaxTiO3 (SLTO), La+3 is substituted for Sr+2 in an insulator of SrTiO3(STO) when the material is doped with electrons, and in contrast, Sr+2 is substituted for La+3 in a Mott-Brinkman-Rice insulator of LaTiO3(LTO) when the material is doped with holes.
As shown in FIG. 3 , it was observed in a test that the electrical conductance sharply increases to a maximum value at ρ=0.95 in a section from ρ=1 to ρ=0.95, that is, until the percentage of the Sr+2 holes added to the Mott-Brinkman-Rice insulator of LaTiO3(LTO) becomes 5%. The result of the test is disclosed in references “Y. Tokura, Y, Taguchi, Y. Okada, Y. Fujishima, T. Arima, K. Kumagi, and Y. Iye, Phys. Rev. Lett. 70. 2126 (1993)” and “K. Kumagai, T. Suzuki, Y. Taguchi, Y. Okada, Y. Fumjishima, and Y. Tokura, Phys. Rev. B48, 7636 (1993)”.
It can be concluded from the results of the tests shown in FIGS. 2 and 3 that adding holes to a Mott-Brinkman-Rice insulator of LaTiO3(LTO) is more effective than adding electrons to an insulator of SrTiO3(STO) in obtaining the maximum electrical conductance.
A gate electrode 430 is formed on the dielectric layer 420 to apply a predetermined voltage to the dielectric layer 420. A source electrode 440 is formed on a first portion of the Mott-Brinkman-Rice insulator 410, and a drain electrode 450 is formed on a second portion of the Mott-Brinkman-Rice insulator 410. The source electrode 440 and the drain electrode 450 are separated by the dielectric layer 420.
The following description concerns the operations of the FET. A predetermined voltage is applied to the source electrode 440 and the drain electrode 450, thereby generating a predetermined potential on the surface of the Mott-Brinkman-Rice insulator 410 of LaTiO3(LTO). Next, a gate voltage is applied to the gate electrode 430 so that Sr+2 holes can flow from the dielectric layer 420 of Ba1-xSrxTiO3 (BSTO) into a Mott-Brinkman-Rice insulator 410 at low concentration. Then, the Mott-Brinkman-Rice insulator 410 undergoes abrupt metal-insulator transition, and the conductive channel 415 is formed. As a result, current flows between the source electrode 440 and the drain electrode 450 through the conductive channel 415.
When the concentration of holes is 5%, that is, ρ=0.95, the number of electrons in a metal region formed due to the abrupt metal-insulator transition is about 4×1014/cm2. This number of electrons is about at least 100 times of the number of electrons (about 1012/cm2) in a channel of a usual Metal Oxide Semiconductor Field Effect Transistor (MOSFET), so a high current amplification can be achieved.
According to circumstances, electrons can be added to the Mott-Brinkman-Rice insulator 410. However, the addition of electrons increases power consumption more than the addition of holes. In other words, when a gate voltage Vg is 0.12 volts, the dielectric constant ∈ of the dielectric layer 420 is 200, and the thickness “d” of the dielectric layer 420 is 50 nm, then the number Ncharge of static hole charges corresponding to a low concentration ρ=0.95 is about 4×1014/cm2 (Ncharge=Vg∈/ed). Accordingly, if a hole concentration Nhole is set to about 4×1014/cm2, and other variables, i.e., the dielectric constant ∈ and the thickness “d” of the dielectric layer 420 are adjusted to the conditions of transistor fabrication, the gate voltage Vg can be significantly decreased, so power consumption can be decreased.
However, when static electrons corresponding to a high concentration ρ=0.95 are added to the Mott-Brinkman-Rice insulator 410, the number Nelectron of electrons is more than the number Nhole of holes. Accordingly, even if the dielectric constant ∈ and the thickness “d” of the dielectric layer 420 are properly adjusted, the gate voltage Vg becomes greater than in the case of adding holes. As a result, power consumption increases compared to the case of adding holes at a low concentration. In this specification, a transistor according to the present invention is referred to as a Mott-Gutzwiller-Brinkman-Rice-Kim (MGBRK) transistor in order to discriminate it from a Mott or Mott-Hubbard (MH) FET.
As described above, a FET according to the present invention provides the following effects. First, since a depletion layer does not exist, there is no limit in the length of a channel. Therefore, the degree of integration of a device and a switching speed can be greatly increased. Second, since a dielectric layer having a properly high dielectric constant is used as a gate insulator, an appropriate concentration of holes for doping can be obtained with a low voltage without greatly reducing the thickness of the dielectric layer. Third, when holes are added to a Mott-Brinkman-Rice insulator at a low concentration to provoke abrupt metal-insulator transition, a high current gain and a low power consumption can be achieved.
Claims (55)
1. A switching field effect transistor comprising:
a substrate;
a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes add therein;
a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adds holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto;
a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer;
a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and
a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
2. The switching field effect transistor of claim 1 , wherein the substrate is formed of a material selected from the group consisting of SrTiO3, Oxide materials, Silicon on Insulator (SOI), and Silicon.
3. The switching filed effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3 (0≦x≦0.1), where R is a cation with trivalent rare-earch ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr).
4. The switching filed effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material, h-BaTiO3.
5. The switching field effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material selected from the group consisting of Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4 (0≦x≦0.05).
6. The switching field effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material selected from the group consisting of V2O3, (CrxV1-x)2O3(0≦×0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
7. The switching field effect transistor of claim 1 , wherein the dielectric layer is formed of Ba1-xSrxTiO3(0≦x≦0.05), Pb(Zr1-xTix)O3(0≦x≦0.05), and SrBi2Ta2O9.
8. The switching field effect transistor of claim 1 , wherein the dielectric layer is formed of a material selected from the group consisting of SiO2, Si3N4, Al2O3, Y2O3, La2O3, Ta2O5, TiO2, HfO2, ZrO2.
9. The switching field effect transistor of claim 1 , wherein the source electrode and the drain electrode are separated from each other by the dielectric layer.
10. A device using metal-insulator transition, wherein a paramagnetic insulator is abruptly phase-transited to metal due to an energy change between electrons to form a conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
11. The device using metal-insulator transition of claim 10, wherein the paramagnetic insulator has a bound and metallic electron structure.
12. The device using metal-insulator transition of claim 10, wherein the carriers generated due to the metal-insulator transition are electrons.
13. The device using metal-insulator transition of claim 10, wherein the energy change is caused by implantation of holes.
14. The device using metal-insulator transition of claim 10, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
15. A device using metal-insulator transition, wherein a paramagnetic insulator is abruptly phase-transited to metal due to implantation of holes to form a conductive channel, wherein the effective mass, m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
16. The device using metal-insulator transition of claim 15, wherein the paramagnetic insulator has a bound and metallic electron structure.
17. The device using metal-insulator transition of claim 15, wherein the carriers generated due to the metal-insulator transition are electrons.
18. The device using metal-insulator transition of claim 15, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
19. A device using metal-insulator transition, wherein holes are implanted into a paramagnetic insulator having a bound and metallic electron structure to form a conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
20. The device using metal-insulator transition of claim 19, wherein the carriers generated due to the metal-insulator transition are electrons.
21. The device using metal-insulator transition of claim 19, wherein the conductive channel is formed by abruptly transiting the phase of the paramagnetic insulator to metal.
22. The device using metal-insulator transition of claim 19, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
23. A device using metal-insulator transition, wherein a paramagnetic insulator having a bound and metallic electron structure undergoes abrupt transition to metal due to an energy change between electrons caused by implantation of holes to form a conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
24. The device using metal-insulator transition of claim 23, wherein the carriers generated due to the metal-insulator transition are electrons.
25. The device using metal-insulator transition of claim 23, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
26. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons; and
an electrode making the energy change occur in the insulator,
wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
27. The device using metal-insulator transition of claim 26, wherein the paramagnetic insulator has a bound and metallic electron structure.
28. The device using metal-insulator transition of claim 26, wherein the carriers generated due to the metal-insulator transition are electrons.
29. The device using metal-insulator transition of claim 26, wherein the energy change is caused by implantation of holes.
30. The device using metal-insulator transition of claim 26, further comprising at least one electrode formed on the paramagnetic insulator, the electrode applying a predetermined voltage to the conductive channel.
31. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons;
a first electrode making the energy change occur in the paramagnetic insulator; and
a second electrode formed on the paramagnetic insulator, the second electrode applying a predetermined voltage to the conductive channel,
wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
32. The device using metal-insulator transition of claim 31, wherein the paramagnetic insulator has a bound and metallic electron structure.
33. The device using metal-insulator transition of claim 31, wherein the carriers generated due to the metal-insulator transition are electrons.
34. The device using metal-insulator transition of claim 31, wherein the energy change is caused by implantation of holes.
35. The device using metal-insulator transition of claim 31, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
36. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons;
a first electrode making the energy change occur in the paramagnetic insulator; and
two second electrodes insulated from the first electrode and electrically connected to each other by the conductive channel,
wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
37. The device using metal-insulator transition of claim 36, wherein the paramagnetic insulator has a bound and metallic electron structure.
38. The device using metal-insulator transition of claim 36, wherein the carriers generated due to the metal-insulator transition are electrons.
39. The device using metal-insulator transition of claim 36, wherein the energy change is caused by implantation of holes.
40. The device using metal-insulator transition of claim 36, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
41. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons; and
a compound adding holes into the paramagnetic insulator when a predetermined voltage is applied to the compound,
wherein the holes are generated when a first element of the compound is substituted with a second element having a different atomic structure from the first element, and the holes are added to the paramagnetic insulator,
wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
42. The device using metal-insulator transition of claim 41, wherein the paramagnetic insulator has a bound and metallic electron structure.
43. The device using metal-insulator transition of claim 41, wherein the carriers generated due to the metal-insulator transition are electrons.
44. The device using metal-insulator transition of claim 41, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
45. The device using metal-insulator transition of claim 41, wherein the compound is formed of at least one material selected from the group consisting of Ba1-xSrxTiO3(0≦x≦0.05), Pb(Zr1-xTix)O3(0≦x≦0.05), and SrBi2Ta2O9.
46. A device using metal-insulator transition, comprising:
a paramagnetic insulator formed of at least one material selected from the group consisting of LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with a divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3; and
a compound formed of at least one material selected from the group consisting of Ba1-xSrxTiO3(0≦x≦0.05), Pb(Zr1-xTix)O3(0≦x≦0.05), and SrBi2Ta2O9, wherein holes included in the compound are added to the insulator, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
47. A field effect transistor using metal-insulator transition, comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons;
a gate electrode formed on one side of the insulator, the gate electrode applying a predetermined voltage to the paramagnetic insulator to induce the energy change; and
a source electrode and a drain electrode formed to be electrically connected to each other by the conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
48. The field effect transistor using metal-insulator transition of claim 47, wherein the paramagnetic insulator has a bound and metallic electron structure.
49. The field effect transistor using metal-insulator transition of claim 47, wherein the carriers generated due to the metal-insulator transition are electrons.
50. The field effect transistor using metal-insulator transition of claim 47, wherein the energy change is caused by implantation of holes.
51. The field effect transistor using metal-insulator transition of claim 50, wherein a voltage is applied to the gate electrode to form a low concentration of holes causing the abrupt metal-insulator transition.
52. The field effect transistor using metal-insulator transition of claim 47, wherein the paramagnetic insulator is formed of a material selected from the group consisting a LaTiO3, YTiO3, and R1-xAxTiO3(0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO3, Ca2RuO4, Ca2-xSrxRuO4(0≦x≦0.05), Ca2IrO4, and Ca2-xSrxIrO4(0≦x≦0.05), V2O3, (CrxV1-x)2O3(0≦x≦0.05), CaVO3, Ca1-xSrxVO3(0≦x≦0.05), and YVO3.
53. The field effect transistor using metal-insulator transition of claim 47, further comprising a gate insulation layer formed between the paramagnetic insulator and the gate electrode.
54. The field effect transistor using metal-insulator transition of claim 53, wherein the gate insulation layer is formed of at least one material selected from the group consisting of Ba1-xSrxTiO3(0≦x≦0.05), Pb(Zr1-xTix)O3(0≦x≦0.05), and SrBi2Ta2O9.
55. The field effect transistor using metal-insulator transition of claim 53, wherein the gate insulation layer is formed of at least one material selected from the group consisting of SiO2, Si3N4, Al2O3, Y2O3, La2O3, Ta2O5, HfO2, and ZrO2.
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Also Published As
Publication number | Publication date |
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US6624463B2 (en) | 2003-09-23 |
US20030054615A1 (en) | 2003-03-20 |
KR100433623B1 (en) | 2004-05-31 |
JP3917025B2 (en) | 2007-05-23 |
TW565934B (en) | 2003-12-11 |
KR20030024156A (en) | 2003-03-26 |
JP2003101018A (en) | 2003-04-04 |
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