|Publication number||USRE42849 E1|
|Application number||US 12/153,717|
|Publication date||Oct 18, 2011|
|Priority date||Feb 9, 2004|
|Also published as||CN1683999A, CN100504610C, DE602005002155D1, DE602005002155T2, EP1562080A1, EP1562080B1, US7050146, US20050174549|
|Publication number||12153717, 153717, US RE42849 E1, US RE42849E1, US-E1-RE42849, USRE42849 E1, USRE42849E1|
|Inventors||Paulus Cornelis Duineveld, Peter Dirksen, Aleksey Yurievich Kolesnychenko, Helmar Van Santen|
|Original Assignee||Asml Netherlands B.V.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (120), Non-Patent Citations (47), Referenced by (6), Classifications (8), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
More than one reissue application has been filed for the reissue of Pat. No. 7,050,146. The reissue applications are continuation reissue application No. 13/214,955 and parent reissue application No. 12/153,717 (the present application), all of which are reissue applications of Pat. No. 7,050,146.
1. Field of the Invention
The present invention relates to a lithographic apparatus and a device manufacturing method.
2. Description of the Related Art
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning structure, such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
It has been proposed to immerse the substrate in the lithographic projection apparatus in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. This enables imaging of smaller features because the exposure radiation will have a shorter wavelength in the liquid. (The effect of the liquid may also be regarded as increasing the effective NA of the system and also increasing the depth of focus.)
However, submersing the substrate or substrate and substrate table in a bath of liquid (see, for example, U.S. Pat. No. 4,509,852) means that there is a large body of liquid that must be accelerated during a scanning exposure. This requires additional or more powerful motors and turbulence in the liquid may lead to undesirable and unpredictable effects.
One of the solutions proposed is for a liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system). One way which has been proposed to arrange for this is disclosed in WO 99/49504. As illustrated in
Another solution which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table. The seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis). A seal is formed between the seal member and the surface of the substrate. Preferably the seal is a contactless seal such as a gas seal. Such a system is disclosed in European Patent Application No. 03252955.4 hereby incorporated in its entirety by reference.
Other types of seal members are clearly possible including those with different arrangements of inlets and outlets and also those which are asymmetric.
A difficulty in immersion lithography has been found to be the existence of bubbles in the immersion liquid. These bubbles can be of any size, but bubbles of the order of a few μm have presented a particular problem. This is especially the case when the μm bubbles lie on the surface of the substrate or a sensor which is to be imaged because in this position the bubbles have a maximum disturbing influence on the projection beam.
It is an aspect of the present invention to reduce the effect of bubbles in immersion liquid on the imaging quality in immersion lithography.
According to an aspect of the present invention, there is provided a lithographic apparatus including an illumination system configured to provide projection beam of radiation; a support configured to support a patterning structure, the patterning structure configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to at least partly fill a space between a final element of the projection system and the substrate with an immersion liquid; and a power source configured to apply a first electrical potential to a first object effective to move bubbles and/or particles in the immersion liquid.
In this way, it is possible to apply a force on bubbles in the immersion liquid in a direction either towards or away from the first object. This is because bubbles in the immersion liquid will have a natural electrokinetic potential which is a potential difference between the surface of the bubble and the fully dissociated ionic concentration in the body of the liquid. Thus, by choosing the first electrical potential to be either the same or opposite polarity to the electrokinetic potential of the bubble it can be determined whether the bubble moves towards or away from the first object. Thus, this system can be used to move bubbles in the immersion liquid to places where their effect on the imaging quality of the apparatus is minimized. The present invention works in the same way on small particles as it does on bubbles.
Preferably, the first object forms a border of the space so that the positions of the bubbles in the immersion liquid in the space can be controlled. Alternatively, the first object can be in contact with the immersion liquid in a supply channel upstream of the space. In this way it is possible to avoid the generation of excessive electrical potential fields in the space which might be deleterious to sensors in the space or might be difficult to arrange for because of the limited space for objects under the projection system.
It is desirable to have a second power source or voltage to apply a second electrical potential to a second object in contact with the immersion liquid. In this way, the force on the bubbles may be increased as the first electrical potential could be made effective to repel the bubbles whilst the second electrical potential could be made effective to attract the bubbles, or vice versa.
In one embodiment, the substrate can be made to be the first object so that bubbles can be repelled from the substrate itself. In another embodiment, the second object can be the final element of the projection system so that bubbles can be attracted towards that and thereby away from the substrate. The first and second objects may be the other way round.
In another embodiment, the first object still forms a border of the space but is positioned distal from the optical axis of the apparatus. In this way bubbles can be moved away from the optical axis of the apparatus so that the liquid through which imaging is actually taking place is substantially free of bubbles.
According to a further aspect of the present invention, there is provided a device manufacturing method including projecting a patterned beam of radiation onto a target portion of a substrate using a projection system; providing an immersion liquid between a final element of the projection system and the substrate; and applying a force on bubbles in the immersion liquid by applying a charge to an object in contact with the immersion liquid.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. One of ordinary skill will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm).
The term “patterning structure” used herein should be broadly interpreted as referring to a structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
Patterning structures may be transmissive or reflective. Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. In this manner, the reflected beam is patterned. In each example of a patterning structure, the support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms, “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure”.
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
The illuminator IL receives a beam of radiation from a radiation source LA. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source LA to the illuminator IL with the aid of a beam delivery system Ex including, for example, suitable directing mirrors and/or a beam expander. In other cases, the source may be an integral part of the apparatus, for example when the source is a mercury lamp. The source LA and the illuminator IL, together with the beam delivery system Ex if required, may be referred to as a radiation system.
The illuminator IL may include an adjusting device AM to adjust the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL generally includes various other components, such as an integrator IN and a condenser CO. The illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
The projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and a position sensor IF (e.g. an interferometric device), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in
The depicted apparatus can be used in the following preferred modes:
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
The present invention is applicable to any type of liquid supply system. The supply system may be configured to supply any type of immersion liquid and may use any type of system for confining the immersion liquid between the projection system PL and the substrate W.
The liquid supply system of
Immersion liquid is supplied to the space between the projection system PL and the substrate W through a conduit 30. The immersion liquid is then removed from the space. This removal of liquid is not illustrated but may be in any way, for example by a low pressure source.
Micro bubbles and small particles can be present in the immersion liquid and, if these are close to the surface of the substrate W during imaging, can deleteriously effect the quality of the projected image and the resulting product. The present invention addresses this issue drawing on the discovery made by the mining industry that small solid particles adhere to bubble surfaces in a liquid. It was found that electrical forces between micron size bubbles and the solid particles play an important role in the adhesion. It was found that bubbles in a liquid have, on their surface, an electrokinetic (or zeta) potential which results in a potential difference between the surface of the bubble and the fully disassociated ionic concentration in the body of the liquid. This also applies to small particles.
In the present invention, a power source or voltage supply V (or charge, voltage, electrical field or potential difference generator or supply) is used to apply an electrical potential to one or more objects of the immersion apparatus. The principle of operation is that if repulsion is required a potential difference between the fully disassociated ionic concentration of the liquid and the object is generated, which is of the same polarity as the potential difference between the fully disassociated ionic concentration in the body of the liquid and the surface of the bubble. If attraction between the object and the bubble is required the potential differences should have opposite polarity. In this way forces can be generated on the bubbles towards or away from the objects (e.g. electrodes) which are in contact with the immersion liquid.
In pure water, which is a candidate for use as an immersion liquid at 193 nm projection beam wavelength, it has been found that the surface potential of μm bubbles is about −50 mV. This potential will vary with bubble size and also with type of immersion liquid. However, the same principles as described here can be used for other immersion liquids and bubble sizes and the invention is fully applicable to those. Additives may be added to the immersion liquid to change the effect of the surface potential. CaCl2 and NaCl are suitable additives for this purpose.
Alternatively, the objects to be charged or have a voltage applied to them could be attached to a surface of the barrier member 10. In
Another place to use the present invention is upstream of the space 5 between the final element 20 of the projection system PL and the substrate W in the liquid supply system. In this case, as the immersion liquid passes along conduits 30 and through a housing 40, oppositely charged and opposing plates (e.g., electrodes) 42, 44 produce a force on the bubbles which is effective to move the bubbles, when the immersion liquid is in the space 5, further away from the substrate W than they would be without the application of the electrical field upstream of the space 5. The immersion liquid with a high concentration of bubbles, i.e. near the electrode 44, could even be removed and not supplied to the space 5. The removed liquid could be subjected to a bubble removal process before being recycled in the liquid supply system.
In all of the above examples, the higher the voltage applied by the voltage generator V the greater the force on the bubbles. The potential on the objects should not be so high as to cause disassociation of the immersion liquid but should be high enough to provide a force on the bubbles such that the present invention is effective. For an immersion liquid comprised mainly of water, typical potential differences applied to the objects are 5 mV to 5V, preferably 10 mV to 500 mV. An electrical field of 5 mV/mm to 500 mV/mm due to the application of the potential is preferred.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3527684||Mar 13, 1967||Sep 8, 1970||Eastman Kodak Co||Method of increasing contrast in electrophoretic reproduction|
|US3573975||Jul 10, 1968||Apr 6, 1971||Ibm||Photochemical fabrication process|
|US3648587||Oct 10, 1968||Mar 14, 1972||Eastman Kodak Co||Focus control for optical instruments|
|US4013554||May 13, 1975||Mar 22, 1977||Sachs-Systemtechnik Gmbh||Method and apparatus for purifying water contaminated with anodically oxidizable organic matter|
|US4346164||Oct 6, 1980||Aug 24, 1982||Werner Tabarelli||Photolithographic method for the manufacture of integrated circuits|
|US4390273||Feb 17, 1981||Jun 28, 1983||Censor Patent-Und Versuchsanstalt||Projection mask as well as a method and apparatus for the embedding thereof and projection printing system|
|US4396705||Sep 18, 1981||Aug 2, 1983||Hitachi, Ltd.||Pattern forming method and pattern forming apparatus using exposures in a liquid|
|US4480910||Mar 15, 1982||Nov 6, 1984||Hitachi, Ltd.||Pattern forming apparatus|
|US4509852||Aug 17, 1982||Apr 9, 1985||Werner Tabarelli||Apparatus for the photolithographic manufacture of integrated circuit elements|
|US4569739||Dec 31, 1984||Feb 11, 1986||Dorr-Oliver Incorporated||Electrofilter using an improved electrode assembly|
|US5040020||Nov 2, 1989||Aug 13, 1991||Cornell Research Foundation, Inc.||Self-aligned, high resolution resonant dielectric lithography|
|US5121256||Mar 14, 1991||Jun 9, 1992||The Board Of Trustees Of The Leland Stanford Junior University||Lithography system employing a solid immersion lens|
|US5223331||Apr 1, 1991||Jun 29, 1993||Matsushita Electric Industrial Co., Ltd.||Organic device and method for producing the same|
|US5289001||Dec 22, 1992||Feb 22, 1994||Hitachi, Ltd.||Laser beam scanning apparatus having a variable focal distance device and the variable focal distance device for use in the apparatus|
|US5610683||Jun 5, 1995||Mar 11, 1997||Canon Kabushiki Kaisha||Immersion type projection exposure apparatus|
|US5715039||May 17, 1996||Feb 3, 1998||Hitachi, Ltd.||Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns|
|US5825043||Oct 7, 1996||Oct 20, 1998||Nikon Precision Inc.||Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus|
|US5900354||Jul 3, 1997||May 4, 1999||Batchelder; John Samuel||Method for optical inspection and lithography|
|US6191429||Apr 6, 1999||Feb 20, 2001||Nikon Precision Inc.||Projection exposure apparatus and method with workpiece area detection|
|US6207331||Jul 2, 1998||Mar 27, 2001||Fuji Xerox Co., Ltd.||Aqueous image recording method for electrochemically depositing an image forming material|
|US6236634||Aug 11, 2000||May 22, 2001||Digital Papyrus Corporation||Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction|
|US6413401||Jul 3, 1997||Jul 2, 2002||Caliper Technologies Corp.||Variable control of electroosmotic and/or electrophoretic forces within a fluid-containing structure via electrical forces|
|US6496257||May 22, 2000||Dec 17, 2002||Nikon Corporation||Projection exposure apparatus and method|
|US6560032||Mar 16, 2001||May 6, 2003||Olympus Optical Co., Ltd.||Liquid immersion lens system and optical apparatus using the same|
|US6600547||Sep 24, 2001||Jul 29, 2003||Nikon Corporation||Sliding seal|
|US6603130||Apr 17, 2000||Aug 5, 2003||Asml Netherlands B.V.||Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses|
|US6633365||Dec 10, 2001||Oct 14, 2003||Nikon Corporation||Projection optical system and exposure apparatus having the projection optical system|
|US6952253||Nov 12, 2003||Oct 4, 2005||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US6954256||Oct 31, 2003||Oct 11, 2005||Asml Netherlands B.V.||Gradient immersion lithography|
|US7006209 *||Jul 25, 2003||Feb 28, 2006||Advanced Micro Devices, Inc.||Method and apparatus for monitoring and controlling imaging in immersion lithography systems|
|US7009682||Nov 18, 2003||Mar 7, 2006||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7014966 *||Sep 2, 2003||Mar 21, 2006||Advanced Micro Devices, Inc.||Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems|
|US7050146||Feb 9, 2004||May 23, 2006||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7075616||Nov 12, 2003||Jul 11, 2006||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7081943||Nov 12, 2003||Jul 25, 2006||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7091502||May 12, 2004||Aug 15, 2006||Taiwan Semiconductor Manufacturing, Co., Ltd.||Apparatus and method for immersion lithography|
|US7193232||Nov 12, 2003||Mar 20, 2007||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method with substrate measurement not through liquid|
|US7199858||Nov 12, 2003||Apr 3, 2007||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7213963||Jun 1, 2004||May 8, 2007||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7224427||Aug 3, 2004||May 29, 2007||Taiwan Semiconductor Manufacturing Company, Ltd.||Megasonic immersion lithography exposure apparatus and method|
|US7224434||Oct 17, 2005||May 29, 2007||Canon Kabushiki Kaisha||Exposure method|
|US7307263||Jul 14, 2004||Dec 11, 2007||Asml Netherlands B.V.||Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap|
|US7317504||Apr 8, 2004||Jan 8, 2008||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7326522||Feb 11, 2004||Feb 5, 2008||Asml Netherlands B.V.||Device manufacturing method and a substrate|
|US7359030||Dec 1, 2003||Apr 15, 2008||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7385670||Oct 5, 2004||Jun 10, 2008||Asml Netherlands B.V.||Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus|
|US7394521||Dec 23, 2003||Jul 1, 2008||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US7405417||Dec 20, 2005||Jul 29, 2008||Asml Netherlands B.V.||Lithographic apparatus having a monitoring device for detecting contamination|
|US7462850||Dec 8, 2005||Dec 9, 2008||Asml Netherlands B.V.||Radical cleaning arrangement for a lithographic apparatus|
|US20020020821||Jul 26, 2001||Feb 21, 2002||Koninklijke Philips Electronics N.V.||Method of manufacturing an optically scannable information carrier|
|US20020163629||May 7, 2002||Nov 7, 2002||Michael Switkes||Methods and apparatus employing an index matching medium|
|US20030123040||Nov 7, 2002||Jul 3, 2003||Gilad Almogy||Optical spot grid array printer|
|US20030136668||Jan 7, 2003||Jul 24, 2003||Itsuki Kobata||Electrolytic processing device and substrate processing apparatus|
|US20030174408||Mar 6, 2003||Sep 18, 2003||Carl Zeiss Smt Ag||Refractive projection objective for immersion lithography|
|US20040000627||Aug 2, 2002||Jan 1, 2004||Carl Zeiss Semiconductor Manufacturing Technologies Ag||Method for focus detection and an imaging system with a focus-detection system|
|US20040017989||Jul 23, 2002||Jan 29, 2004||So Daniel W.||Fabricating sub-resolution structures in planar lightwave devices|
|US20040021844||Jul 30, 2003||Feb 5, 2004||Nikon Corporation||Projection optical system and exposure apparatus having the projection optical system|
|US20040036019||Aug 20, 2003||Feb 26, 2004||Goodley Paul C.||Micro matrix ion generator for analyzers|
|US20040075895||Oct 22, 2002||Apr 22, 2004||Taiwan Semiconductor Manufacturing Co., Ltd.||Apparatus for method for immersion lithography|
|US20040109237||May 30, 2003||Jun 10, 2004||Carl Zeiss Smt Ag||Projection objective, especially for microlithography, and method for adjusting a projection objective|
|US20040119954||Dec 9, 2003||Jun 24, 2004||Miyoko Kawashima||Exposure apparatus and method|
|US20040125351||Dec 30, 2002||Jul 1, 2004||Krautschik Christof Gabriel||Immersion lithography|
|US20050024609||Jun 4, 2004||Feb 3, 2005||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US20050037269 *||Aug 11, 2003||Feb 17, 2005||Levinson Harry J.||Method and apparatus for monitoring and controlling imaging in immersion lithography systems|
|US20050110973||Nov 24, 2003||May 26, 2005||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US20050132914||Dec 23, 2003||Jun 23, 2005||Asml Netherlands B.V.||Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus|
|US20050175776||Nov 12, 2004||Aug 11, 2005||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US20050264774||Jun 8, 2005||Dec 1, 2005||Nikon Corporation||Exposure apparatus and method for producing device|
|US20050274898||Jun 1, 2005||Dec 15, 2005||Nikon Corporation||Pollutant removal method and apparatus, and exposure method and apparatus|
|US20060023185||Sep 29, 2005||Feb 2, 2006||Nikon Corporation||Cleanup method for optics in immersion lithography|
|US20060050351||Sep 2, 2005||Mar 9, 2006||Tatsuhiko Higashiki||Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device|
|US20060103818||Nov 18, 2004||May 18, 2006||International Business Machines Corporation||Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system|
|US20060132731||Dec 20, 2004||Jun 22, 2006||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US20060232757||Mar 23, 2006||Oct 19, 2006||Nikon Corporation||Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method|
|US20060256316||Apr 6, 2006||Nov 16, 2006||Zao Nikon Co., Ltd.||Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method|
|US20070064215||Dec 22, 2004||Mar 22, 2007||Koninklijke Philips Electronic, N.V.||Removable pellicle for immersion lithography|
|US20070127001||Dec 2, 2005||Jun 7, 2007||Asml Netherlands B.V.||Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus|
|US20070146657||Dec 27, 2005||Jun 28, 2007||Asml Netherlands B.V.||Lithographic apparatus and method|
|US20070146658||Dec 27, 2005||Jun 28, 2007||Asml Netherlands B.V.||Lithographic apparatus and method|
|US20070159610||Feb 8, 2005||Jul 12, 2007||Nikon Corporation||Exposure apparatus, device manufacturing method, maintenance method, and exposure method|
|US20070206279||Jul 5, 2005||Sep 6, 2007||Vistec Semiconductor Systems Gmbh||Device for inspecting a microscopic component by means of an immersion objective|
|US20070247600||Jun 22, 2007||Oct 25, 2007||Nikon Corporation||Exposure apparatus and method for producing device|
|US20070251543||Apr 28, 2006||Nov 1, 2007||Asml Netherlands B.V.||Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus|
|US20070258072||Jul 11, 2007||Nov 8, 2007||Nikon Corporation||Exposure apparatus, method for cleaning memeber thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device|
|US20070285631||May 22, 2006||Dec 13, 2007||Asml Netherland B.V||Lithographic apparatus and lithographic apparatus cleaning method|
|US20080002162||Jan 23, 2007||Jan 3, 2008||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US20080049201||May 18, 2007||Feb 28, 2008||Asml Netherlands B.V.||Lithographic apparatus and lithographic apparatus cleaning method|
|US20080218712||May 15, 2008||Sep 11, 2008||Asml Netherlands B. V.||Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus|
|US20080273181||Jun 29, 2007||Nov 6, 2008||Asml Netherlands B.V.||Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method|
|US20080284990||Apr 11, 2008||Nov 20, 2008||Asml Netherlands B.V.||Cleaning device, a lithographic apparatus and a lithographic cleaning method|
|US20090025753||Sep 27, 2007||Jan 29, 2009||Asml Netherlands B.V.||Lithographic Apparatus And Contamination Removal Or Prevention Method|
|US20090027635||Sep 27, 2007||Jan 29, 2009||Asml Netherlands B.V.||Lithographic Apparatus and Contamination Removal or Prevention Method|
|US20090027636||Sep 27, 2007||Jan 29, 2009||Asml Netherlands B.V.||Lithographic Apparatus, Reflective Member And A Method of Irradiating The Underside Of A Liquid Supply System|
|DD206607A1||Title not available|
|DD221263A1||Title not available|
|DD221563A1||Title not available|
|DD224448A1||Title not available|
|DD242880A1||Title not available|
|EP0023231A1||Jul 27, 1979||Feb 4, 1981||Tabarelli, Werner||Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer|
|EP0418427A2||Dec 18, 1989||Mar 27, 1991||Eiichi Miyake||Exposure process|
|EP0605103A1||Nov 26, 1993||Jul 6, 1994||Canon Kabushiki Kaisha||Projection apparatus for immersed exposure|
|EP0834773A2||Oct 6, 1997||Apr 8, 1998||Nikon Corporation||Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus|
|EP0834773A3||Oct 6, 1997||Jul 28, 1999||Nikon Corporation||Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus|
|EP1039511A1||Dec 10, 1998||Sep 27, 2000||Nikon Corporation||Projection exposure method and projection aligner|
|FR2474708B1||Title not available|
|JP2000162761A||Title not available|
|WO2004053596A2||Feb 17, 2003||Jun 24, 2004||Carl Zeiss Smt Ag||Method for adjusting a desired optical property of a positioning lens and microlithographic projection exposure system|
|WO2004053950A1||Dec 2, 2003||Jun 24, 2004||Nikon Corporation||Exposure apparatus and method for manufacturing device|
|WO2004053951A1||Dec 2, 2003||Jun 24, 2004||Nikon Corporation||Exposure method, exposure apparatus and method for manufacturing device|
|WO2004053952A1||Dec 5, 2003||Jun 24, 2004||Nikon Corporation||Exposure apparatus and method for manufacturing device|
|WO2004053953A1||Dec 8, 2003||Jun 24, 2004||Nikon Corporation||Exposure apparatus and method for manufacturing device|
|WO2004053954A1||Dec 8, 2003||Jun 24, 2004||Nikon Corporation||Exposure apparatus and method for manufacturing device|
|WO2004053955A1||Dec 8, 2003||Jun 24, 2004||Nikon Corporation||Exposure system and device producing method|
|WO2004053956A1||Dec 9, 2003||Jun 24, 2004||Nikon Corporation||Exposure apparatus, exposure method and method for manufacturing device|
|WO2004053957A1||Dec 9, 2003||Jun 24, 2004||Nikon Corporation||Surface position detection apparatus, exposure method, and device porducing method|
|WO2004053958A1||Dec 9, 2003||Jun 24, 2004||Nikon Corporation||Exposure apparatus and method for manufacturing device|
|WO2004053959A1||Dec 10, 2003||Jun 24, 2004||Nikon Corporation||Optical device and projection exposure apparatus using such optical device|
|WO2004055803A1||Nov 14, 2003||Jul 1, 2004||Koninklijke Philips Electronics N.V.||Liquid removal in a method and device for irradiating spots on a layer|
|WO2004057589A1||Nov 20, 2003||Jul 8, 2004||Koninklijke Philips Electronics N.V.||Method and device for irradiating spots on a layer|
|WO2004057590A1||Nov 20, 2003||Jul 8, 2004||Koninklijke Philips Electronics N.V.||Method and device for irradiating spots on a layer|
|1||"Depth-of-Focus Enhancement Using High Refractive Index Layer on the Imaging Layer", IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985, p. 6521.|
|2||A. Suzuki, "Lithography Advances on Multiple Fronts", EEdesign, EE Times, Jan. 5, 2004.|
|3||B. Lin, The kappa3 coefficient in nonparaxial lambda/NA scaling equations for resolution, depth of focus, and immersion lithography, J. Microlith., Microfab., Microsyst. 1(1):7-12 (2002).|
|4||B. Lin, The κ3 coefficient in nonparaxial λ/NA scaling equations for resolution, depth of focus, and immersion lithography, J. Microlith., Microfab., Microsyst. 1(1):7-12 (2002).|
|5||B.J. Lin, "Drivers, Prospects and Challenges for Immersion Lithography", TSMC, Inc., Sep. 2002.|
|6||B.J. Lin, "Proximity Printing Through Liquid", IBM Technical Disclosure Bulletin, vol. 20, No. 11B, Apr. 1978, p. 4997.|
|7||B.J. Lin, "The Paths to Subhalf-Micrometer Optical Lithography", SPIE vol. 922, Optical/Laser Microlithography (1988), pp. 256-269.|
|8||B.W. Smith et al., "Immersion Optical Lithography at 193nm", Future Fab International, vol. 15, Jul. 11, 2003.|
|9||*||English Translation of JP 06-262005 (dated Sep. 20, 1994).|
|10||European Search Report for EP Application No. 05250691.2, dated May 18, 2005.|
|11||G. Owen et al., "⅛ μm Optical Lithography", J. Vac. Sci. Technol. B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036.|
|12||G. Owen et al., "1/8 mum Optical Lithography", J. Vac. Sci. Technol. B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036.|
|13||G.W.W. Stevens, "Reduction of Waste Resulting from Mask Defects", Solid State Technology, Aug. 1978, vol. 21, 008, pp. 68-72.|
|14||H. Hata, "The Development of Immersion Exposure Tools", Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-22.|
|15||H. Hogan, "New Semiconductor Lithography Makes a Splash", Photonics Spectra, Photonics TechnologyWorld, Oct. 2003 Edition, pp. 1-3.|
|16||H. Kawata et al., "Fabrication of 0.2 mum Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens", Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177.|
|17||H. Kawata et al., "Fabrication of 0.2 μm Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens", Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177.|
|18||H. Kawata et al., "Optical Projection Lithography using Lenses with Numerical Apertures Greater than Unity", Microelectronic Engineering 9 (1989), pp. 31-36.|
|19||J.A. Hoffnagle et al., "Liquid Immersion Deep-Ultraviolet Interferometric Lithography", J. Vac. Sci. Technol. B., vol. 17, No. 6, Nov./Dec. 1999, pp. 3306-3309.|
|20||M. Switkes et al., "Immersion Lithography at 157 nm", J. Vac. Sci. Technol. B., vol. 19, No. 6, Nov./Dec. 2001, pp. 2353-2356.|
|21||M. Switkes et al., "Immersion Lithography at 157 nm", MIT Lincoln Lab, Orlando 2001-1, Dec. 17, 2001.|
|22||M. Switkes et al., "Immersion Lithography: Optics for the 50 nm Node", 157 Anvers-1, Sep. 4, 2002.|
|23||Nikon Precision Europe GmbH, "Investor Relations-Nikon's Real Solutions", May 15, 2003.|
|24||Nikon Precision Europe GmbH, "Investor Relations—Nikon's Real Solutions", May 15, 2003.|
|25||Notice of Reasons for Rejection for Japanese Patent Application No. 2005-030038 dated Jun. 2, 2008.|
|26||S. Owa and N. Nagasaka, "Potential Performance and Feasibility of Immersion Lithography", NGL Workshop 2003, Jul. 10, 2003, Slide Nos. 1-33.|
|27||S. Owa et al., "Advantage and Feasibility of Immersion Lithography", Proc. SPIE 5040 (2003).|
|28||S. Owa et al., "Immersion Lithography; its potential performance and issues", SPIE Microlithography 2003, 5040-186, Feb. 27, 2003.|
|29||S. Owa et al., "Update on 193nm immersion exposure tool", Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-51.|
|30||T. Matsuyama et al., "Nikon Projection Lens Update", SPIE Microlithography 2004, 5377-65, Mar. 2004.|
|31||U.S. Appl. No. 10/367,910, filed Feb. 19, 2003, Suwa et al.|
|32||U.S. Appl. No. 10/698,012, filed Oct. 31, 2003, Flagello et al.|
|33||U.S. Appl. No. 10/705,783, filed Nov. 12, 2003, Lof et al.|
|34||U.S. Appl. No. 10/705,785, filed Nov. 12, 2003, Derksen et al.|
|35||U.S. Appl. No. 10/705,804, filed Nov. 12, 2003, De Smit et al.|
|36||U.S. Appl. No. 10/705,805, filed Nov. 12, 2003, Lof et al.|
|37||U.S. Appl. No. 10/705,816, filed Nov. 12, 2003, Lof et al.|
|38||U.S. Appl. No. 10/715,116, filed Nov. 18, 2003, Bleeker.|
|39||U.S. Appl. No. 10/719,683, filed Nov. 24, 2003, Streekerk et al.|
|40||U.S. Appl. No. 10/724,402, filed Dec. 1, 2003, Simon et al.|
|41||U.S. Appl. No. 10/743,266, filed Dec. 23, 2003, Mulkens et al.|
|42||U.S. Appl. No. 10/743,271, filed Dec. 23, 2003, Van Santen et al.|
|43||U.S. Appl. No. 10/773,461, filed Feb. 9, 2004, Duineveld et al.|
|44||U.S. Appl. No. 10/775,326, filed Feb. 11, 2004, Dierichs.|
|45||U.S. Appl. No. 10/820,227, filed Apr. 8, 2004, De Smit.|
|46||U.S. Appl. No. 10/857,614, filed Jun. 1, 2004, Lof et al.|
|47||U.S. Appl. No. 10/860,662, filed Jun. 4, 2004, De Smit.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8363208 *||Jan 29, 2013||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US9036128||Jul 13, 2012||May 19, 2015||Asml Netherlands B.V.||Lithographic apparatus and in-line cleaning apparatus|
|US9110389 *||Sep 23, 2011||Aug 18, 2015||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US9405205||May 18, 2015||Aug 2, 2016||Asml Netherlands B.V.||Lithographic apparatus and in-line cleaning apparatus|
|US20100128235 *||Feb 4, 2010||May 27, 2010||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|US20120013872 *||Jan 19, 2012||Asml Netherlands B.V.||Lithographic apparatus and device manufacturing method|
|U.S. Classification||355/30, 355/53|
|International Classification||G03F7/20, G03B27/52, G03B27/42, H01L21/027|
|Mar 9, 2011||AS||Assignment|
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KONINKLIJKE PHILIPS ELECTRONICS N.V.;REEL/FRAME:025927/0721
Effective date: 20101014
Owner name: ASML NETHERLANDS B.V., NETHERLANDS
|Nov 1, 2011||CC||Certificate of correction|
|Jan 3, 2014||REMI||Maintenance fee reminder mailed|
|May 23, 2014||LAPS||Lapse for failure to pay maintenance fees|