|Publication number||USRE43411 E1|
|Application number||US 12/071,055|
|Publication date||May 29, 2012|
|Priority date||Sep 23, 2003|
|Also published as||US6998642, US20050062049|
|Publication number||071055, 12071055, US RE43411 E1, US RE43411E1, US-E1-RE43411, USRE43411 E1, USRE43411E1|
|Inventors||Jin-Ywan Lin, Chuan-Cheng Tu|
|Original Assignee||Epistar Corporation|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (5), Referenced by (5), Classifications (11), Legal Events (1)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of the Invention
The present invention relates to a light emitting device, and more particularly to two AlGaInP light emitting diodes in series connection by semiconductor manufacture process.
2. Description of the Prior Art
The conventional AlGaInP LED has a double hetero-structure (DH), as shown in
With the composition alternation of the active layer 5, the wavelengths of the light emitted are varied from 650 nm: red to 555 nm: green. A drawback is generally found in the conventional LED, that is: while the light emitted from the active layer 5 towards the substrate 3 will be totally absorbed by GaAs substrate 3. It is because the GaAs substrate has an energy gap smaller than that of the active layer 5. Therefore, the light generated is absorbed resulted in lower light generated efficiency for this kind of conventional AlGaInP LED.
To overcome the substrate 3 light absorption problem, several conventional LED fabrication technologies have been disclosed. However, those conventional technologies still accompany with several disadvantages and limitations. For example, Sugawara et al. disclosed a method published in Appl. Phys. Lett. Vol. 61, 1775–1777 (1992), Sugawara et al. inserted a distributed Bragg reflector (DBR) layer in between GaAs substrate and lower cladding layer so as to reflect those light emitted toward the GaAs substrate. However, the reflectivity of DBR layer is usefully only for those light which almost vertically towards the GaAs substrate. With the decrease of injection angle, the reflectivity is drastically decreased. Consequently, the improvement of external quantum efficiency is limited.
Kish et al. disclosed a wafer-bonded transparent-substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light emitting diode, entitled “Very high efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1−x)0.5In0.5P/GaP” on Appl. Phys. Lett. Vol. 64, No. 21, 2839 (1994). The TS AlGaInP LED was fabricated by growing a very thick (about 50 μm) p-type GaP window layer by hydride vapor phase epitaxy (HVPE) formed on epi-layers light emitting structure. Subsequently, the temporary n-type GaAs substrate is selectively removed using conventional chemical etching techniques. After removing the GaAs substrate, the LED epilayer structure is then bonded to an 8–10 mil thick n-type GaP substrate.
For the light illuminated concerned, the TS AlGaInP LED exhibits a two fold improvement in light output compared to absorbing substrate (AS) AlGaInP LEDs. However, the fabrication process of TS AlGaInP LED is very complicated. Since the bonding process is to make two III–V semiconductor wafers directed bond together by heating and pressing for a period of time. Even worse, a non-ohmic contact interface between them is generally found to have high resistance. To manufacture these TS AlGaInP LEDs in high yield and low cost is difficult as a result.
Another conventional technique was proposed by Horng et al., on Appl. Phys. Lett. Vol. 75, No. 20, 3054 (1999) entitled “AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding.” Horng et al., reported a mirror-substrate (MS) of AlGaInP/metal/SiO2/Si LED fabricated by wafer-fused technology. In LED, AuBe/Au stack layer function as a bonding layer for silicon substrate and epi-layer LED. However, the intensity of the AlGaInP LED is only about 90 mcd under 20 mA injecting current. The light intensity is at least lower than that of TS AlGaInP LED by 40%. It could not be satisfied.
A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer,
The two LEDs, respectively, have a first trench formed therein exposed the p-type ohmic contact epi-layer. An electrical conductive channel is formed in each of the first trench bottom to expose the p-type ohmic contact metal electrode. Two n-type ohmic contact metal electrodes are formed on the lower cladding layer. A bonding metal layer is then formed to connect the p-type ohmic contact metal electrodes through the electrical conductive channel and on the n-type ohmic contact metal electrodes.
To isolate two LEDs, an isolation trench to isolate therebetween is formed at a border of the first trench from the p-type ohmic contact epi-layer to the nonconductive protective layer. A dielectric layer is formed to fill in the isolation trench and extend to one sidewall of the first trench which is a boundary between the two LEDS. A conductive metal trace is then formed on the dielectric layer and extended to connect the n-type ohmic contact metal electrode of one LED to the p-type ohmic contact metal electrode of the other LED.
Alternatively, the metal adhering layer can be served as one electrode without the electrical conductive channel since it had already connected to the p-type ohmic contact metal electrode. In the situation, the bottom of the first trench is deeper than aforementioned first trench and the isolation trench is formed from the metal adhering layer to the nonconductive protective layer. The boding metal layer, the dielectric layer and the conductive trace are the same as first preferred embodiment.
The foregoing aspects and many of the attendant advantages of this invention will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:
The present invention discloses a light emitting diode (LED) structure and a method of two adjacent LEDs in series connection through the semiconductor manufacture process. The detailed descriptions accompany with the
Since the basis structure for the two LEDs is the same before depicting the processes about how to connect them. Hence, for illustrating convenience, only one LED is shown in the
The material of mirror protective layer 30 can be chosen from conductive oxide or non-conductive oxide. The conductive oxide, for example, can be a layer of InSnO, In2O3, SnO2, ZnO, or MgO. An example of non-conductive oxide can be a layer of Al2O3, SiO2, SiNx.
The p-electrode, apart from direct contacts the p-type ohmic contact metal electrode 28, it can also contact the metal adhering layer 14 in accordance with the present invention. In case of contacting the metal adhering layer 14, the mirror protective layer 30 formed of nonconductive oxide should include a plurality of conductive channels therein to fill with a metal adhering layer 14 thereto electrical connect the p-type ohmic contact metal electrode 28 to the metal reflector. The result is shown in
The p-type ohmic contact epi-layer 16 can be a layer selected from GaP, GaAsP, AlGaAs or GaInP, All of the candidates for serving as the p-type ohmic contact epi-layer 16 require having an energy band gap larger than that of the active layer 20 thereby alleviating the light absorption. Moreover, the p-type ohmic contact epi-layer 16 usually must have high carrier concentrations doped therein so as to form a good ohmic contact. The (AlxGa1−x)0.5In0.5P active layer 20 is with Al composition of about x=0 to 0.45. The Al dosage in the upper cladding layer 18 and lower cladding layer 22 is of about x=0.5 to 1.0. For situation of without Al containing, the wavelength of the light emitted from Ga0.5In0.5P LED is about 635 nm, which is in range of red visible light.
As is known by skilled in the art, the ratio of forgoing compound is, for example of the preferred embodiment only, not intended to limit the claim scope. The invention is also applied to any ratio of the composition. Furthermore, the structure of active layer 18 20 can be a single hetero-structure (SH), a double hetero-structure (DH), or multiple quantum wells (MQW). The 0thickness thicknesses of the upper cladding layer 18, active layer 20, and lower cladding layer 22 are respectively, 0.5–3.0 μm, 0.5–2.0 μm and 0.5–3.0 μm.
The preferred material of the etching stop layer 24 according to the present invention can be any III–V compound semiconductor material if it can match with that of the GaAs substrate 26 so as to reduce the dislocation density. Another constraint condition for a material to be as a candidate of the etching stop layer 24 is the etching selectively thereof. The etching stop layer 24 should be with a lower etching rate than the GaAs substrate 26.
The good candidates of those satisfied above conditions, for examples, InGaP or AlGaAs can be served. The lower cladding layer 22 can also be served as the etching stop layer 24 since it has a high selectivity to GaAs substrate 26, and thus if the thickness of the lower cladding layer 22 is thick enough, the etch stop layer 24 is optional.
Subsequently, a substrate structure as shown in
Subsequently, the light emitting element as those shown in
Thereafter, the opaque n-type GaAs substrate 26 is then removed and stopped at the etching stop layer 24 by an etchant mixture, for example, 5H3PO4:3H2O2:3H2O or 1NH4OH:35H2O2. If the material of the etching stop layer 24 is chosen from InGaP or AlGaAs, the layer 24 is preferably to be removed completely since those materials can still absorb the light.
To make LED with the n electrode and the p electrode on one side, two etching steps are successively carried out. Referring to
Thereafter, a photoresist pattern (not shown) is coated on all areas. The photoresist pattern (not shown) having an opening exposed a portion of n-type lower cladding layer 22 to define position of n-type ohmic contact electrode 32. An ohmic contact metal layer 32 is then deposited on all areas including the portion on the n-type lower cladding layer 22 and on the photoresist pattern. Afterward, a liftoff process is performed to remove the ohmic contact metal layer (not shown) on the photoresist pattern. And then stripping away the photoresist pattern is done.
Still referring to
The processes of forming two adjacent LEDs in series connection are shown in
Since the aforementioned LED in first preferred embodiment includes metal adhering layer 14, which electrically connects to the p-type ohmic contact metal electrode 28, hence, the trench bottom can be formed alternatively at the metal adhering layer 14 instead of the p-type ohmic contact epi-layer 16. The second etch step of forming slating trench is thus can be skipped. The results are shown in
While the preferred embodiment of the invention has been illustrated and described, it will be appreciated that various changes can be made therein without departing from the spirit and scope of the invention.
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|U.S. Classification||257/79, 438/47, 438/22, 257/96, 257/97|
|International Classification||H01L27/15, H01L31/12, H01L33/30, H01L33/08|