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Publication numberUST954009 I4
Publication typeGrant
Application numberUS 05/596,498
Publication dateJan 4, 1977
Filing dateJul 16, 1975
Priority dateMar 24, 1973
Publication number05596498, 596498, US T954009 I4, US T954009I4, US-I4-T954009, UST954009 I4, UST954009I4
InventorsKonrad Malin, Dietrich Seybold
Original AssigneeInternational Business Machines Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Method for the thermal oxidation of silicon with added chlorine
US T954009 I4
Abstract
the dry thermal oxidation of silicon semiconductor material to produce an oxide layer, such as the gate oxide of a field effect transistor, is carried out by flowing oxygen over the surface of the semiconductor at an elevated temperature to form a layer of silicon oxide. The electrical properties of the layer are improved by adding chlorine to the oxygen in the form of between 0.2 and 5.0 mol % of carbon tetrachloride in order to introduce chlorine into the growing oxide layer.
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Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US5593497 *Apr 3, 1995Jan 14, 1997Canon Kabushiki KaishaMethod for forming a deposited film
US6329229Nov 3, 1997Dec 11, 2001Semiconductor Energy Laboratory Co., Ltd.Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US7713854Oct 20, 2006May 11, 2010Taiwan Semiconductor Manufacturing Co., Ltd.Gate dielectric layers and methods of fabricating gate dielectric layers
US8008152 *Mar 29, 2007Aug 30, 2011Kabushiki Kaisha ToshibaMethod of manufacturing semiconductor device
US8227355 *Apr 28, 2006Jul 24, 2012Fujitsu Semiconductor LimitedMethod and apparatus of fabricating semiconductor device
US20070166892 *Apr 28, 2006Jul 19, 2007Fujitsu LimitedMethod and apparatus of fabricating semiconductor device
US20080014745 *Mar 29, 2007Jan 17, 2008Ryota FujitsukaMethod of manufacturing semiconductor device
US20080096394 *Oct 20, 2006Apr 24, 2008Taiwan Semiconductor Manufacturing Co., Ltd.Gate dielectric layers and methods of fabricating gate dielectric layers
Classifications
U.S. Classification438/774, 427/399
International ClassificationH01L21/316
Cooperative ClassificationH01L21/02255, H01L21/31662, H01L21/02238
European ClassificationH01L21/02K2E2B2B2, H01L21/02K2E2J, H01L21/316C2B2