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Publication numberUST988007 I4
Publication typeGrant
Application numberUS 06/009,704
Publication dateNov 6, 1979
Filing dateFeb 5, 1979
Priority dateDec 21, 1977
Publication number009704, 06009704, US T988007 I4, US T988007I4, US-I4-T988007, UST988007 I4, UST988007I4
InventorsRoland F. Drew, Frank J. Schmidt, Jr., Thomas J. Vanduynhoven
Original AssigneeInternational Business Machines Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Laser deposition of metal upon transparent materials
US T988007 I4
The present invention contemplates a method and apparatus for selectively depositing metal or other materials upon a transparent substrate utilizing a laser source. More particularly, the invention contemplates depositing material in highly selective areas with a high degree of adhesion and uniformity.
The invention attains these results with an arrangement wherein a laser source 12 is located on one side of a transparent or translucent substrate 18 upon which metal is to be deposited, so that the laser beam can be directed through the substrate. A reservoir 20 of metal is located on supports 24 on the opposite side of the substrate adjacent to the surface thereof. Deflection means 14, 16 are provided to selectively scan the laser beam at predetermined intensity levels over a desired pattern.
The scanned laser beam acts to heat and vaporize metal from the metal reservoir, which is then redeposited upon the adjacent surface of the glass substrate. It has been found that with transparent substrates, metal and particularly conductive metal can be redeposited upon one surface thereof using this method with a high degree of adhesion and uniformity.
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Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US5173441 *Feb 8, 1991Dec 22, 1992Micron Technology, Inc.Laser ablation deposition process for semiconductor manufacture
US5492861 *Aug 26, 1993Feb 20, 1996Deutsche Forschungsanstalt Fuer Luft-Und Raumfahrt E.V.Process for applying structured layers using laser transfer
US6419998Jun 19, 2000Jul 16, 2002Mcgrath ThomasMethod for deposition of metal catalysts on inert supports
US6709720Mar 17, 1998Mar 23, 2004Kabushiki Kaisha Yaskawa DenkiMarking method and marking material
US8334475Nov 4, 2009Dec 18, 2012Rabinovich Joshua EProcess for energy beam solid-state metallurgical bonding of wires having two or more flat surfaces
US20100000466 *Sep 11, 2009Jan 7, 2010Imra America, Inc.P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates
US20100155374 *Nov 4, 2009Jun 24, 2010Rabinovich Joshua Eprocess for energy beam solid-state metallurgical bonding of wires having two or more flat surfaces
U.S. Classification427/597
International ClassificationC03C17/09, C23C14/04, C23C14/28, H05K3/04
Cooperative ClassificationC23C14/28, C03C17/09, H05K3/046, C23C14/048
European ClassificationC23C14/28, C03C17/09, C23C14/04F, H05K3/04E