WO1987007651A1 - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus Download PDF

Info

Publication number
WO1987007651A1
WO1987007651A1 PCT/JP1987/000357 JP8700357W WO8707651A1 WO 1987007651 A1 WO1987007651 A1 WO 1987007651A1 JP 8700357 W JP8700357 W JP 8700357W WO 8707651 A1 WO8707651 A1 WO 8707651A1
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing apparatus
semiconductor manufacturing
bias
impressing
susceptor
Prior art date
Application number
PCT/JP1987/000357
Other languages
English (en)
French (fr)
Inventor
Tadahiro Ohmi
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Publication of WO1987007651A1 publication Critical patent/WO1987007651A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
PCT/JP1987/000357 1986-06-06 1987-06-06 Semiconductor manufacturing apparatus WO1987007651A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61131188A JPS62287071A (ja) 1986-06-06 1986-06-06 薄膜の形成装置および形成方法
JP61/131188 1986-06-06

Publications (1)

Publication Number Publication Date
WO1987007651A1 true WO1987007651A1 (en) 1987-12-17

Family

ID=15052073

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1987/000357 WO1987007651A1 (en) 1986-06-06 1987-06-06 Semiconductor manufacturing apparatus

Country Status (3)

Country Link
US (1) US4874494A (ja)
JP (1) JPS62287071A (ja)
WO (1) WO1987007651A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0347567A2 (de) * 1988-06-23 1989-12-27 Leybold Aktiengesellschaft Anordnung zum Beschichten eines Substrats mit Dielektrika
EP0380682A1 (en) * 1988-06-17 1990-08-08 OHMI, Tadahiro Method of fabricating semiconductor devices

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US5594280A (en) * 1987-10-08 1997-01-14 Anelva Corporation Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
JP2759983B2 (ja) * 1988-10-11 1998-05-28 日本電気株式会社 金属薄膜の付着方法
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5316645A (en) * 1990-08-07 1994-05-31 Canon Kabushiki Kaisha Plasma processing apparatus
JP3076367B2 (ja) * 1990-11-29 2000-08-14 キヤノン株式会社 プラズマ処理装置
WO1992019960A1 (en) * 1991-05-09 1992-11-12 Nanophore, Inc. Methods for the electrophoretic separation of nucleic acids and other linear macromolecules in gel media with restrictive pore diameters
US5302882A (en) * 1991-09-09 1994-04-12 Sematech, Inc. Low pass filter for plasma discharge
JPH05198787A (ja) * 1991-11-08 1993-08-06 Canon Inc 固体撮像装置及びその製造方法
US5747427A (en) * 1991-11-15 1998-05-05 Hokkaido Electric Power Co., Inc. Process for forming a semiconductive thin film containing a junction
JPH0653137A (ja) * 1992-07-31 1994-02-25 Canon Inc 水素化アモルファスシリコン膜の形成方法
US5325019A (en) * 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
JP2905342B2 (ja) * 1992-09-07 1999-06-14 財団法人国際超電導産業技術研究センター ＹＢａ２Ｃｕ３Ｏｘ超電導薄膜の製造方法
JP3231900B2 (ja) * 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
US5510011A (en) * 1992-11-09 1996-04-23 Canon Kabushiki Kaisha Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
DE4301188C2 (de) * 1993-01-19 2001-05-31 Leybold Ag Vorrichtung zum Beschichten oder Ätzen von Substraten
JP3351843B2 (ja) * 1993-02-24 2002-12-03 忠弘 大見 成膜方法
JPH06306599A (ja) * 1993-04-23 1994-11-01 Toshiba Corp 半導体素子用製造装置
JP2642849B2 (ja) * 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
US5427621A (en) * 1993-10-29 1995-06-27 Applied Materials, Inc. Method for removing particulate contaminants by magnetic field spiking
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US6155198A (en) * 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
US5572020A (en) * 1995-12-29 1996-11-05 Alvarez; Bernard V. Simplified radon testing package
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6187151B1 (en) 1997-01-02 2001-02-13 Micron Technology, Inc. Method of in-situ cleaning and deposition of device structures in a high density plasma environment
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
US6013159A (en) * 1997-11-16 2000-01-11 Applied Materials, Inc. Particle trap in a magnetron sputtering chamber
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6080285A (en) * 1998-09-14 2000-06-27 Applied Materials, Inc. Multiple step ionized metal plasma deposition process for conformal step coverage
US20050061445A1 (en) * 1999-05-06 2005-03-24 Tokyo Electron Limited Plasma processing apparatus
KR100748798B1 (ko) * 1999-05-06 2007-08-13 동경 엘렉트론 주식회사 플라즈마 에칭 장치
US6350353B2 (en) * 1999-11-24 2002-02-26 Applied Materials, Inc. Alternate steps of IMP and sputtering process to improve sidewall coverage
US6344419B1 (en) 1999-12-03 2002-02-05 Applied Materials, Inc. Pulsed-mode RF bias for sidewall coverage improvement
US6554979B2 (en) 2000-06-05 2003-04-29 Applied Materials, Inc. Method and apparatus for bias deposition in a modulating electric field
US6746591B2 (en) 2001-10-16 2004-06-08 Applied Materials Inc. ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US20050266173A1 (en) * 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
FR2871812B1 (fr) * 2004-06-16 2008-09-05 Ion Beam Services Sa Implanteur ionique fonctionnant en mode plasma pulse
US20060172536A1 (en) * 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
KR101239776B1 (ko) 2005-02-03 2013-03-06 어플라이드 머티어리얼스, 인코포레이티드 타깃에 인가되는 ｒｆ 소스 파워에 의한 물리 기상 증착플라즈마 반응기
US9752228B2 (en) * 2009-04-03 2017-09-05 Applied Materials, Inc. Sputtering target for PVD chamber
US8992747B2 (en) * 2010-03-12 2015-03-31 Applied Materials, Inc. Apparatus and method for improved darkspace gap design in RF sputtering chamber
US10964590B2 (en) * 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
KR102154899B1 (ko) * 2018-10-08 2020-09-10 동의대학교 산학협력단 몰리브덴 박막 표면의 미세구조 제어방법
CN113061863A (zh) * 2019-12-16 2021-07-02 深圳市万普拉斯科技有限公司 一种镀膜治具、镀膜设备及镀膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918625A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd 薄膜製造方法
JPS602663A (ja) * 1983-06-20 1985-01-08 Oki Electric Ind Co Ltd 薄膜の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461054A (en) * 1966-03-24 1969-08-12 Bell Telephone Labor Inc Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918625A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd 薄膜製造方法
JPS602663A (ja) * 1983-06-20 1985-01-08 Oki Electric Ind Co Ltd 薄膜の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0380682A1 (en) * 1988-06-17 1990-08-08 OHMI, Tadahiro Method of fabricating semiconductor devices
EP0380682A4 (en) * 1988-06-17 1990-12-27 Tadahiro Ohmi Method of fabricating semiconductor devices
US5362672A (en) * 1988-06-17 1994-11-08 Tadahiro Ohmi Method of forming a monocrystalline film having a closed loop step portion on the substrate
EP0347567A2 (de) * 1988-06-23 1989-12-27 Leybold Aktiengesellschaft Anordnung zum Beschichten eines Substrats mit Dielektrika
EP0347567A3 (de) * 1988-06-23 1991-07-17 Leybold Aktiengesellschaft Anordnung zum Beschichten eines Substrats mit Dielektrika

Also Published As

Publication number Publication date
JPH0359986B2 (ja) 1991-09-12
US4874494A (en) 1989-10-17
JPS62287071A (ja) 1987-12-12

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