WO1990013139A3 - A method of localized photochemical etching of multilayered semiconductor body - Google Patents

A method of localized photochemical etching of multilayered semiconductor body Download PDF

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Publication number
WO1990013139A3
WO1990013139A3 PCT/US1990/002125 US9002125W WO9013139A3 WO 1990013139 A3 WO1990013139 A3 WO 1990013139A3 US 9002125 W US9002125 W US 9002125W WO 9013139 A3 WO9013139 A3 WO 9013139A3
Authority
WO
WIPO (PCT)
Prior art keywords
buried layer
semiconductor body
etching
photochemical etching
multilayered semiconductor
Prior art date
Application number
PCT/US1990/002125
Other languages
French (fr)
Other versions
WO1990013139A2 (en
Inventor
Mark N Ruberto
Alan E Willner
Richard M Osgood Jr
Dragan V Podlesnik
Original Assignee
Univ Columbia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Columbia filed Critical Univ Columbia
Publication of WO1990013139A2 publication Critical patent/WO1990013139A2/en
Publication of WO1990013139A3 publication Critical patent/WO1990013139A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

Abstract

The sensitivity of localized photochemical etching to the optical and electrical properties of multilayered semiconductor materials is utilized for selectively etching a laterally extending undercut in a buried layer. The semiconductor body is immersed in a suitable etching solution and a beam of light of appropriate wavelength and intensity is directed onto the semiconductor solution interface. The buried layer has a longer diffusion length for photogenerated carriers than the layers adjacent thereto, causing carriers to diffuse away from the illuminated region within the buried layer and thereby etch the buried layer laterally, undercutting the adjacent layers.
PCT/US1990/002125 1989-04-24 1990-04-24 A method of localized photochemical etching of multilayered semiconductor body WO1990013139A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/342,528 US5081002A (en) 1989-04-24 1989-04-24 Method of localized photohemical etching of multilayered semiconductor body
US342,528 1989-04-24

Publications (2)

Publication Number Publication Date
WO1990013139A2 WO1990013139A2 (en) 1990-11-01
WO1990013139A3 true WO1990013139A3 (en) 1991-02-07

Family

ID=23342227

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1990/002125 WO1990013139A2 (en) 1989-04-24 1990-04-24 A method of localized photochemical etching of multilayered semiconductor body

Country Status (2)

Country Link
US (1) US5081002A (en)
WO (1) WO1990013139A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465815A (en) * 1990-07-06 1992-03-02 Matsushita Electric Ind Co Ltd Formation of pattern
US5389196A (en) * 1992-01-30 1995-02-14 Massachusetts Institute Of Technology Methods for fabricating three-dimensional micro structures
DE4315959C2 (en) * 1993-05-12 1997-09-11 Max Planck Gesellschaft Method for producing a structured layer of a semiconductor material and a doping structure in a semiconductor material under the action of laser radiation
US6033721A (en) * 1994-10-26 2000-03-07 Revise, Inc. Image-based three-axis positioner for laser direct write microchemical reaction
US6737288B2 (en) * 2001-05-24 2004-05-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating a semiconductor device
US10001480B2 (en) * 2014-01-31 2018-06-19 Jan J. Dubowski Photo-electrochemical biosensor and semiconductor heterostructure-based sensing method
WO2018183867A1 (en) * 2017-03-31 2018-10-04 Nielson Scientific, Llc Three-dimensional semiconductor fabrication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1193335B (en) * 1954-08-25 1965-05-20 Siemens Ag Method for shaping and / or separating processing of photoelectrically active semiconductor crystals
EP0037876A2 (en) * 1980-03-27 1981-10-21 International Business Machines Corporation Electrochemical eroding process for semiconductors
WO1983000073A1 (en) * 1981-06-24 1983-01-06 Western Electric Co METHOD OF PREFERENTIALLY ETCHING OPTICALLY FLAT MIRROR FACETS IN InGaAsP/InP HETEROSTRUCTURES
US4518456A (en) * 1983-03-11 1985-05-21 At&T Bell Laboratories Light induced etching of InP by aqueous solutions of H3 PO4
EP0165826A1 (en) * 1984-04-24 1985-12-27 Thomson-Csf Photoelectrochemical etching of a semiconductor body

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US3457633A (en) * 1962-12-31 1969-07-29 Ibm Method of making crystal shapes having optically related surfaces
US3341937A (en) * 1963-02-20 1967-09-19 Ibm Crystalline injection laser device manufacture
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
US4063992A (en) * 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
US4061530A (en) * 1976-07-19 1977-12-06 Fairchild Camera And Instrument Corporation Process for producing successive stages of a charge coupled device
US4236296A (en) * 1978-10-13 1980-12-02 Exxon Research & Engineering Co. Etch method of cleaving semiconductor diode laser wafers
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4597003A (en) * 1983-12-01 1986-06-24 Harry E. Aine Chemical etching of a semiconductive wafer by undercutting an etch stopped layer
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4784722A (en) * 1985-01-22 1988-11-15 Massachusetts Institute Of Technology Method forming surface emitting diode laser
US4707219A (en) * 1985-05-14 1987-11-17 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated devices including cleaved semiconductor lasers
JPH0716077B2 (en) * 1985-10-11 1995-02-22 三菱電機株式会社 Method of manufacturing semiconductor laser device
FR2588701B1 (en) * 1985-10-14 1988-12-30 Bouadma Noureddine METHOD FOR PRODUCING AN INTEGRATED LASER-PHOTODETECTOR STRUCTURE

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1193335B (en) * 1954-08-25 1965-05-20 Siemens Ag Method for shaping and / or separating processing of photoelectrically active semiconductor crystals
EP0037876A2 (en) * 1980-03-27 1981-10-21 International Business Machines Corporation Electrochemical eroding process for semiconductors
WO1983000073A1 (en) * 1981-06-24 1983-01-06 Western Electric Co METHOD OF PREFERENTIALLY ETCHING OPTICALLY FLAT MIRROR FACETS IN InGaAsP/InP HETEROSTRUCTURES
US4518456A (en) * 1983-03-11 1985-05-21 At&T Bell Laboratories Light induced etching of InP by aqueous solutions of H3 PO4
EP0165826A1 (en) * 1984-04-24 1985-12-27 Thomson-Csf Photoelectrochemical etching of a semiconductor body

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, Volume 45, No. 5, American Institute of Physics, (New York, US), D.V. PODLESNIK et al.: "Deeputraviolet Induced wet Etching of GaAs", pages 563-565 see the whole article *
Applied Physics Letters, Volume 55, No. 10, 4 September 1989, American Institute of Physics, (New York, US), M.N. RUBERTO et al.: "Effect of Carrier Confinement on the Laser-Induced Etching of GaAs/AlGaAs Heterostructures", pages 984-986 see the whole article *
Journal of the Electrochemical Society, Volume 123, No. 5, May 1976, R.P. TIJBERG et al.: "Selective Etching of III-V Compounds with Redox Systems", pages 687-691 see the Abstract (cited in the application) *

Also Published As

Publication number Publication date
WO1990013139A2 (en) 1990-11-01
US5081002A (en) 1992-01-14

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