WO1992013363A3 - Light emitting diode bars and arrays and method of making same - Google Patents
Light emitting diode bars and arrays and method of making same Download PDFInfo
- Publication number
- WO1992013363A3 WO1992013363A3 PCT/US1992/000378 US9200378W WO9213363A3 WO 1992013363 A3 WO1992013363 A3 WO 1992013363A3 US 9200378 W US9200378 W US 9200378W WO 9213363 A3 WO9213363 A3 WO 9213363A3
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- WIPO (PCT)
- Prior art keywords
- arrays
- light emitting
- emitting diode
- making same
- diode bars
- Prior art date
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US07/643,552 US5300788A (en) | 1991-01-18 | 1991-01-18 | Light emitting diode bars and arrays and method of making same |
US643,552 | 1991-01-18 |
Publications (2)
Publication Number | Publication Date |
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WO1992013363A2 WO1992013363A2 (en) | 1992-08-06 |
WO1992013363A3 true WO1992013363A3 (en) | 1993-01-07 |
Family
ID=24581294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US1992/000378 WO1992013363A2 (en) | 1991-01-18 | 1992-01-16 | Light emitting diode bars and arrays and method of making same |
Country Status (2)
Country | Link |
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US (4) | US5300788A (en) |
WO (1) | WO1992013363A2 (en) |
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