WO1993026049A1 - High responsivity ultraviolet gallium nitride detector - Google Patents
High responsivity ultraviolet gallium nitride detector Download PDFInfo
- Publication number
- WO1993026049A1 WO1993026049A1 PCT/US1993/005448 US9305448W WO9326049A1 WO 1993026049 A1 WO1993026049 A1 WO 1993026049A1 US 9305448 W US9305448 W US 9305448W WO 9326049 A1 WO9326049 A1 WO 9326049A1
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- WO
- WIPO (PCT)
- Prior art keywords
- detector
- layer
- gallium nitride
- single crystal
- ultraviolet
- Prior art date
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- 229910002601 GaN Inorganic materials 0.000 title claims description 52
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 8
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000003877 atomic layer epitaxy Methods 0.000 claims abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
- 239000010980 sapphire Substances 0.000 claims abstract description 10
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 33
- 239000011159 matrix material Substances 0.000 claims description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- the invention generally relates to aluminum gallium nitride ultraviolet detectors. More specifically, the invention relates to ultraviolet aluminum gallium nitride detectors formed through a switched atomic layer epitaxy process.
- gallium nitride devices disclose gallium nitride devices.
- One device is an ultraviolet detector comprising a sapphire base, an aluminum nitride matrix matching layer, and an aluminum gallium nitride active layer.
- MOCVD metal organic chemical vapor deposition
- the disclosed device has a peak sensor responsivity at 365 nanometers. The device generally does not provide a broad response across the expanse of the ultraviolet range.
- gallium nitride ultraviolet device has provided a detector having the level or range of responsivity necessary to provide sensitivity over the broad ultraviolet range while still avoiding interferences created by visible and infrared wavelengths.
- the invention also comprises a metallizing layer which serves as an electrode deposited over the single crystal AlGaN layer.
- a metallizing layer which serves as an electrode deposited over the single crystal AlGaN layer.
- the sensor responsivity at 365 nanometers of the claimed detector may be 0.2 x 10 6 A/ with a bias of 5 volts when the molar concentration of Al is 0 mol-%.
- the claimed detector has a responsivity which is nearly constant for wavelengths from 200 to 365 nanometers and it drops by three orders of magnitude by 375 nanometers (within 10 nanometers of the band edge) .
- FIGURES 1A and IB are a schematic depiction of two embodiments of the ultraviolet detector of the invention.
- FIGURES 2A and 2B are graphical depictions of the optical transmission and photoluminescence of the detector of the invention compared to prior art detectors.
- FIGURE 3 is a top plan view of the detector shown in Figs. 1A and IB.
- FIGURE 4A is a graphical depiction of the spectral responsivity of the ultraviolet detector of the invention.
- FIGURE 4B is a graphical depiction of the variance in band edge with variation in Al content in the Al-.GAi_.-N active layer.
- FIGURE 4C is a graphical depiction of the optical transmission versus wavelength for several detectors each having a different Al molar concentration.
- FIGURE 5 is a graphical depiction of the detector of the invention compared to conventional silicon detectors.
- FIGURE 6 is a graphical depiction of the photoresponse time of the ultraviolet detector in accordance with the invention.
- FIGURE 7 is a top plan view of a device comprising the detector of the invention.
- FIGURE 8 is a perspective view of the device shown in Fig. 7.
- the invention comprises an ultraviolet aluminum gai-feirum nitride detector.
- the detector generally has two--layers including a substrate layer and an aluminum gallium nitride layer.
- the detector may also comprise a crystal match or matrix layer between the substrate and the active aluminum gallium nitride layer.
- the AlGaN Ultraviolet Detector Referring to the drawings wherein like numerals represent like parts throughout several views, there is generally shown a AlGaN ultraviolet (UV) detector in
- the UV detector of the invention can be seen in Fig. 1A.
- the detector comprises a single crystal substrate 1, a matrix layer 3, the single crystal AlGaN active layer 5, and a metallization layer 7 which serves as an electrode for the device.
- the device comprises a preliminary layer of AlGaN 4 deposited over the matrix layer 3 to function as a seed for the AlGaN active layer 5.
- the first layer of the ultraviolet detector is a substrate 1. The substrate functions as a seed for the growth of further layers of the detector as well as a physical support for the detector.
- compositions including gallium arsenide, silicon, silicon carbide, zinc oxide, magnesium oxide, germanium, and spinnel quartz among others.
- sapphire and most specifically, single crystal basal plane sapphire is used as the substrate. Basal plane sapphire is commercially available in single crystal form and..serves well as a template for the growth of further layers of the detector. Further, basal plane sapjphire is generally transparent to ultraviolet energy. Basal plane sapphire is commercially available through any -number of channels. zz l ⁇ i order to ease the lattice mismatch between single crystal aluminum gallium nitride and the substrate and increase device quality, the ultraviolet detector of the invention may also comprise an intermediate matrix layer 3. Generally, any number of chemical compositions may be used for such a layer consistent with the function of this layer such as gallium nitride, boron nitride, zinc oxide, magnesium oxide and aluminum nitride, or mixtures thereof among others.
- a preliminary layer of aluminum gallium nitride may then be deposited over the substrate 1 and, if present, matrix layer 3.
- This aluminum gallium nitride layer 4 (Fig. IB) serves as a substrate for the active single crystal aluminum gallium nitride layer 5 which is later deposited by atomic layer epitaxy.
- the aluminum gallium nitride 4 layer may range in thickness generally from about 100 A to 1000 A, preferably from about 400 A to about 600 A, and most preferably is about 500 A thick.
- the ultraviolet detector of the invention also comprises an aluminum gallium nitride active layer 5.
- the function of this aluminum gallium nitride active layer is to absorb and collect ultraviolet signals at a high responsivity rate.
- the aluminum gallium nitride layer is single crystal and from about 4000 A to about 20,000 A, preferably from about 4000 A to 10,000 A, and most preferably about 5000 A. If the single crystal active aluminum gallium nitride layer is too thin, it will not absorb all the ultraviolet signals incident on the detector. Further, if the aluminum gallium nitride single crystal active layer is too thick, the detector will be unable to collect enough ultraviolet energy to drive or create a response.
- the invention comprises a 0.8 micron thick active layer of GaN deposited over a 0.1 micron thick AlN matrix layer 3.
- the epilayer structure Prior to detector fabrication, the epilayer structure was characterized for it's optical transmission and photoluminescence.
- the UV detector of the invention may also comprise an electrode system 7 (Figs. 1A, IB and 3).
- the electrode system serves to sense changes in the AlGaN active layer 5 created by the UV energy, incident to the detector, and transmit these changes to a sensing circuit.
- any number of materials may be used consistent with these functions.
- One means of defining an electrode system is through conventional metallization and photolithography processes. Metals used for the electrode include aluminum, tungsten, silver, copper, gold, titanium and any number of other conductive metals.
- One preferred combination comprises an initial layer of titanium followed by gold patterned as interdigitated fingers (Fig. 3) .
- the interdigitated electrodes may be formed on the epilayers, Fig. 3.
- a liftoff process may be used to form 5000 A thick gold electrodes.
- the fabricated detector structure may occupy an area of 0.75 mm 2 and the interdigitated electrodes may be formed 3 microns wide, 1 mm long and with 10 micron spacing.
- spectral responsivity data for a single (GaN) detector element may be seen in Fig. 4.
- the spectral responsivity is beyond the signal detection limit for wavelengths in excess of 375 nanometers. It reaches its peak value at 360 nanometers (band gap energy as seen in Fig. 2A) and then remains nearly constant down to 200 nanometers.
- the band edge may be varied across the UV range. As seen in Fig. 4B, an aluminum concentration of 0 mole-% provides a band edge of about 365 nm. Meanwhile, an aluminum concentration of 1.0 mole-% provides a band edge of 200 nm.
- Figure 4C illustrates the ability of AlGaN active layer 5 devices to provide varying band edge positioning across the UV spectrum.
- a sapphire substrate 1 may be placed on a SiC coated graphite susceptor and heated with rf induction.
- the matrix layer 3 may then be grown by MOCVD or ALE.
- the matrix layer 3 assists in providing the sharp band gap cutoff by reducing the crystal mismatch with the active layer 5. It is believed that mismatch leads to crystal structure defects. These crystal structure defects may be visualized or perceived as holes, voids, or openings between the various crystals. The creation of openings between the matrix layer 3 and the active layer 5 results in a flow of electrons to the active layer 5 making this layer conductive. Conductivity in the active layer 5 leads to a greater volume of interference and noise and a rougher band gap cutoff.
- the matrix layer comprises aluminum nitride grown in two stages. The first stage is the growth of an amorphous layer and the second stage is the growth of a single crystal layer. Deposition of the subsequent active layer 5 results in a crystallization of the matrix layer 3, transforming the matrix layer to single crystal. Generally, this matrix layer may be grown to a thickness ranging from about 800 A to 1700 A .
- the matrix layer 3 is deposited in a two part deposition process.
- an aluminum nitride layer 3A (See Fig. 1A) ranging in thickness from 300 A to 700 A, and preferably 500 A is deposited at 600°C in amorphous form by MOCVD .
- the second phase of the matrix layer, 3B (See also Fig. 1A) is generally deposited in single crystal form a thickness ranging from 500 A to about 1000 A, and preferably about 700 A. This deposition is completed at temperatures ranging from 950°C to about 1080°C and preferably about 1040°C. by MOCVD.
- a further seed layer 4 of aluminum gallium nitride may be grown.
- this gallium nitride layer may be deposited through standard MOCVD processes at 76 torr pressure and at temperatures ranging from about 950°C to 1080°C and preferably about 1040°C.
- the active aluminum gallium nitride layer 5 is grown in single crystal through atomic layer epitaxy.
- the growth temperature generally ranges from about 800°C and 1000°C and preferably from about 850 to 950°C with a growth time which may span up to or over two hours.
- the growth temperature may be monitored by a thermocouple inserted in the susceptor.
- Source gases for gallium include any number of common gallium sources such as trimethyl or triethylgallium. Other source gases include triethylaluminum and for nitrogen, any number of nitrogenous sources including ammonia.
- Carrier gases may comprise any number of inert gases such as argon and hydrogen. Hydrogen is preferred as it is readily commercially available and generally clean. Growth pressures may range from about 50 torr to 200 torr, and preferably 100 torr.
- the deposition system is capable of switched operation under computer control.
- the precursors may be introduced in the growth chamber in a cyclic fashion with an adjustable sweepout time between the precursor pulses.
- the system preferably also allows for a simultaneous introduction of the precursors.
- One means of using atomic layer epitaxy is to grow the aluminum gallium nitride through a series of pulses or using a switched deposition process. In each of the pulses, lasting approximately one second, a different gas is flowed into the chamber. For example, in the first pulse, triethylgallium may be flowed into the chamber. In the second pulse, only the carrier gas, for example hydrogen, is flowed into the chamber.
- the nitrogenous source for example ammonia
- the nitrogenous source may be flowed into the chamber.
- an aluminum species may be flowed into the chamber.
- the carrier gas is then used to evacuate the chamber.
- the nitrogenous source is then introduced into the chamber.
- the chamber is then evacuated once again.
- Films of varying aluminum concentration may be deposited by varying the order and number of pulses for each respective gas species.
- the sequence of steps may be continued over several thousand times resulting in a atomic layer epitaxy process which takes over two hours. As one of skill in the art would expect, variance or extension of this growth period may increase the chemical nature and thickness of the active aluminum gallium nitride single crystal layer.
- the temperature within the reaction chamber is lowered to range from about 300°C to 400°C and held at that temperature for five minutes in a nitrogen flow.
- Detector fabrication is completed by covering the active aluminum gallium nitride layer with a photolithographic layer and developing that layer to a pattern such as that shown in Fig. 3.
- the photolithographic coated upper surface of the active single crystal aluminum gallium nitride layer is then metallized and then the developed photoresist is stripped from the upper surface of the aluminum gallium nitride layer 5, also stripping certain aspects of metallization over the photoresist.
- the resulting pattern (Fig. 3) acts as a receptor 7 for the ultraviolet detector.
- One metallization system Applicants have found preferable includes 500 A of titanium followed by the deposition of 1500 A of gold. The detector may then be tested by means known to those of skill in the art.
- Working Example 2 A UV detector comprising an ALE GaN layer was grown at 150 torr. The films morphology was very grainy.
- the sample may well be made up of small crystallites of high quality GaN.
- a diamond saw was used to cleave the wafer into individual dies.
- the detectivity (amps/watt) was measured for the detector as a function of field strength over the spectral range of 320-400 nm using a D.C. power supply of 0-200 volts, an ammeter, and a UV radiation source incident to the detector.
- Example 3 The detectors 10 of Example 1 were repackaged and detectivity was remeasured.
- a 4 pin canister 20 (Figs. 7 and 8) was used to mount the detector 10. The canister top was filed out to allow light input.
- the dual detector was cut from the die of Working Example 1 by scribing the back with a carbide steel scribe and placing the cut between two protector slides and lightly tapping. The metal fingers were protected during scribing by a coating of photoresist baked on for 45 minutes at 95°C.
- the canister 20 was metallic, a piece of glass was bonded onto the pedestal with UV epoxy. The detector was then bonded to the glass with UV epoxy. Wires were attached to the connector wires by attachment to intermediate pads positioned on the glass. A wire was bonded to the pad and ultimately connected to the bonding post. Finally the cap was sealed on with epoxy.
- the time response of the UV detector of Example 1 was then measured by pulsing the detector with a nitrogen laser and triggering the scope with the silicon photodiode. The photo-time response appeared to comprise two time constants, one at 1.0 ms and the other on the order of seconds. The laser was adjusted such that at 10 Hz a 10V DC bias existed on the 1 Mega ohm resistor. The rest of the voltage was an AC signal with about a 10 ms time constant.
- the UV response of the detectors was then measured using a black light excitation source.
- Working Example 5 Using the detector of Working Example 4, detector response was measured using a silicon diode and a spectrometer.
- the detector of Working Example 4 has a photoresponse similar to that of the detector of Working Example 1.
- the response dropped 4 orders of magnitude between 365 nm and 370 nm.
- Working Example 6 The peak responsivity of the invention was compared to that from a calibrated silicon detector at a wavelength of 360 nanometers.
- the silicon detector had an area of 0.95 cm 2 as compared to 0.37 mm 2 as the exposed area for the GaN detector.
- Fig. 5 shows the plot of the photosignal measured on the two detectors for the same incident power.
- the GaN detector had a bias of 5 Volts and a 10 Hz signal was used for each case. As seen the responsivity of the GaN detector is fairly linear over a large dynamic range. Scaling the photocurrent to account for the detector areas, we estimate the peak responsivity of the GaN detector to be around 0.2 x 10 6 A/watt. Assuming a quantum efficiency of 0.8 (same as the Si detector) this translates to a gain of around 2 x
- Fig. 6 is a plot of the signal which shows the response time to be 1 ms.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU45999/93A AU4599993A (en) | 1992-06-08 | 1993-06-08 | High responsivity ultraviolet gallium nitride detector |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US895,350 | 1992-06-08 | ||
US07/895,350 US5278435A (en) | 1992-06-08 | 1992-06-08 | High responsivity ultraviolet gallium nitride detector |
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Publication Number | Publication Date |
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WO1993026049A1 true WO1993026049A1 (en) | 1993-12-23 |
WO1993026049A9 WO1993026049A9 (en) | 1994-02-03 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/US1993/005448 WO1993026049A1 (en) | 1992-06-08 | 1993-06-08 | High responsivity ultraviolet gallium nitride detector |
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US (1) | US5278435A (en) |
AU (1) | AU4599993A (en) |
WO (1) | WO1993026049A1 (en) |
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KR20030061704A (en) * | 2003-04-08 | 2003-07-22 | (주) 알파큐브 | Ultra Violet Erythema response sensor using Responsivity of GaN and Ultra Violet pass filter |
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Also Published As
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US5278435A (en) | 1994-01-11 |
AU4599993A (en) | 1994-01-04 |
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