WO1994013017A1 - Power mosfet in silicon carbide - Google Patents
Power mosfet in silicon carbide Download PDFInfo
- Publication number
- WO1994013017A1 WO1994013017A1 PCT/US1993/010490 US9310490W WO9413017A1 WO 1994013017 A1 WO1994013017 A1 WO 1994013017A1 US 9310490 W US9310490 W US 9310490W WO 9413017 A1 WO9413017 A1 WO 9413017A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- silicon carbide
- drain
- conductivity type
- mosfet according
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 108091006146 Channels Proteins 0.000 description 43
- 235000012431 wafers Nutrition 0.000 description 19
- 239000008186 active pharmaceutical agent Substances 0.000 description 10
- 230000003247 decreasing effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000037230 mobility Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 230000005527 interface trap Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000003949 trap density measurement Methods 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 239000004338 Dichlorodifluoromethane Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950702077A KR100271106B1 (en) | 1992-11-24 | 1993-10-27 | Power mosfet in silicon carbide |
DE69332358T DE69332358T2 (en) | 1992-11-24 | 1993-10-27 | PERFORMANCE SILICON CARBIDE MOSFET |
JP6513138A JPH08505492A (en) | 1992-11-24 | 1993-10-27 | Power MOSFET in Silicon Carbide |
AT94900484T ATE225568T1 (en) | 1992-11-24 | 1993-10-27 | POWER MOSFET MADE OF SILICON CARBIDE |
AU55458/94A AU5545894A (en) | 1992-11-24 | 1993-10-27 | Power mosfet in silicon carbide |
EP94900484A EP0671056B1 (en) | 1992-11-24 | 1993-10-27 | Power mosfet in silicon carbide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US980,753 | 1992-11-24 | ||
US07/980,753 US5506421A (en) | 1992-11-24 | 1992-11-24 | Power MOSFET in silicon carbide |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1994013017A1 true WO1994013017A1 (en) | 1994-06-09 |
Family
ID=25527819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1993/010490 WO1994013017A1 (en) | 1992-11-24 | 1993-10-27 | Power mosfet in silicon carbide |
Country Status (8)
Country | Link |
---|---|
US (1) | US5506421A (en) |
EP (1) | EP0671056B1 (en) |
JP (1) | JPH08505492A (en) |
KR (1) | KR100271106B1 (en) |
AT (1) | ATE225568T1 (en) |
AU (1) | AU5545894A (en) |
DE (1) | DE69332358T2 (en) |
WO (1) | WO1994013017A1 (en) |
Cited By (13)
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EP0676814A2 (en) * | 1994-04-06 | 1995-10-11 | Nippondenso Co., Ltd. | Trench semiconductor device and process of producing same |
WO1996008844A1 (en) * | 1994-09-16 | 1996-03-21 | Cree Research, Inc. | Self-aligned field-effect transistor for high frequency applications |
EP0726604A2 (en) * | 1995-02-08 | 1996-08-14 | Ngk Insulators, Ltd. | MIS device and method of manufacturing the same |
GB2306250A (en) * | 1995-10-10 | 1997-04-30 | Int Rectifier Corp | SiC semiconductor device |
WO1998035390A1 (en) * | 1997-02-07 | 1998-08-13 | Cooper James Albert Jr | Structure for increasing the maximum voltage of silicon carbide power transistors |
WO1999009598A1 (en) * | 1997-08-20 | 1999-02-25 | Siemens Aktiengesellschaft | Semiconductor structure comprising an alpha silicon carbide zone, and use of said semiconductor structure |
GB2336721A (en) * | 1998-04-23 | 1999-10-27 | Int Rectifier Corp | Trench mosfet structure |
US6180958B1 (en) | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
US6570185B1 (en) | 1997-02-07 | 2003-05-27 | Purdue Research Foundation | Structure to reduce the on-resistance of power transistors |
US6573534B1 (en) | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
US7462910B1 (en) | 1998-10-14 | 2008-12-09 | International Rectifier Corporation | P-channel trench MOSFET structure |
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US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
US5399515A (en) * | 1993-07-12 | 1995-03-21 | Motorola, Inc. | Method of fabricating a silicon carbide vertical MOSFET and device |
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US5723376A (en) * | 1994-06-23 | 1998-03-03 | Nippondenso Co., Ltd. | Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects |
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US5705835A (en) * | 1994-11-25 | 1998-01-06 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
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US5661312A (en) * | 1995-03-30 | 1997-08-26 | Motorola | Silicon carbide MOSFET |
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US5972801A (en) * | 1995-11-08 | 1999-10-26 | Cree Research, Inc. | Process for reducing defects in oxide layers on silicon carbide |
US6133587A (en) * | 1996-01-23 | 2000-10-17 | Denso Corporation | Silicon carbide semiconductor device and process for manufacturing same |
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US5612232A (en) * | 1996-03-29 | 1997-03-18 | Motorola | Method of fabricating semiconductor devices and the devices |
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US5719409A (en) * | 1996-06-06 | 1998-02-17 | Cree Research, Inc. | Silicon carbide metal-insulator semiconductor field effect transistor |
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Also Published As
Publication number | Publication date |
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DE69332358D1 (en) | 2002-11-07 |
EP0671056B1 (en) | 2002-10-02 |
KR950704815A (en) | 1995-11-20 |
JPH08505492A (en) | 1996-06-11 |
EP0671056A1 (en) | 1995-09-13 |
KR100271106B1 (en) | 2000-11-01 |
AU5545894A (en) | 1994-06-22 |
DE69332358T2 (en) | 2003-07-31 |
US5506421A (en) | 1996-04-09 |
ATE225568T1 (en) | 2002-10-15 |
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