WO1996016435A3 - Semiconductor device provided with a microcomponent having a fixed and a movable electrode - Google Patents

Semiconductor device provided with a microcomponent having a fixed and a movable electrode Download PDF

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Publication number
WO1996016435A3
WO1996016435A3 PCT/IB1995/000913 IB9500913W WO9616435A3 WO 1996016435 A3 WO1996016435 A3 WO 1996016435A3 IB 9500913 W IB9500913 W IB 9500913W WO 9616435 A3 WO9616435 A3 WO 9616435A3
Authority
WO
WIPO (PCT)
Prior art keywords
microcomponent
semiconductor
fixed
electrode
manufactured
Prior art date
Application number
PCT/IB1995/000913
Other languages
French (fr)
Other versions
WO1996016435A2 (en
Inventor
Samber Mark Andre De
Wilhelmus Peters
Original Assignee
Philips Electronica N V
Philips Norden Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronica N V, Philips Norden Ab filed Critical Philips Electronica N V
Priority to JP51670096A priority Critical patent/JP3936736B2/en
Priority to EP95933588A priority patent/EP0752159B1/en
Priority to DE69514343T priority patent/DE69514343T2/en
Publication of WO1996016435A2 publication Critical patent/WO1996016435A2/en
Publication of WO1996016435A3 publication Critical patent/WO1996016435A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0728—Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit

Abstract

The invention relates to a method of manufacturing a semiconductor device whereby semiconductor switching elements (2) and an integrated microcomponent (3) with a fixed electrode (6) and an electrode (7) which is movable relative to the fixed electrode (6) are provided adjacent a surface of a semiconductor slice (1), which slice (1) is subsequently subdivided into individual semiconductor devices. According to the invention, the method is characterized in that, after the semiconductor switching elements (2) have been provided, metal conductor tracks (20) of a first level are provided on the surface which form the fixed electrode (6) and electrical connections (9), over which an insulating layer (21) and metal conductor tracks (22) of a second level are provided, which form the movable electrode (7) and further electrical connections (8), after which the insulating layer (21) between the fixed (6) and the movable electrode (7) is removed. In the method according to the invention, the semiconductor switching elements (2) are thus manufactured first, after which during the application of the metallization of the device the microcomponent (3) is also manufactured. Since the electrodes (6, 7) of the microcomponent are manufactured by means of conductor tracks (20, 22) at the two metallization levels, it suffices to adapt the metallization stage ('back end') of the manufacturing process only for the creation of a microcomponent (3). A standard process may accordingly be taken for the manufacture of the semiconductor elements (2). The manufacture of the device becomes simpler and cheaper thereby.
PCT/IB1995/000913 1994-11-23 1995-10-24 Semiconductor device provided with a microcomponent having a fixed and a movable electrode WO1996016435A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP51670096A JP3936736B2 (en) 1994-11-23 1995-10-24 Semiconductor device in which a micro component having a fixed electrode and a movable electrode is formed
EP95933588A EP0752159B1 (en) 1994-11-23 1995-10-24 Semiconductor device provided with a microcomponent having a fixed and a movable electrode
DE69514343T DE69514343T2 (en) 1994-11-23 1995-10-24 SEMICONDUCTOR DEVICE WITH A MICRO COMPONENT THAT HAS A RIGID AND A MOVING ELECTRODE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94203409 1994-11-23
NL94203409.1 1994-11-23

Publications (2)

Publication Number Publication Date
WO1996016435A2 WO1996016435A2 (en) 1996-05-30
WO1996016435A3 true WO1996016435A3 (en) 1996-07-18

Family

ID=8217402

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB1995/000913 WO1996016435A2 (en) 1994-11-23 1995-10-24 Semiconductor device provided with a microcomponent having a fixed and a movable electrode

Country Status (6)

Country Link
US (1) US5814554A (en)
EP (1) EP0752159B1 (en)
JP (1) JP3936736B2 (en)
KR (1) KR100398292B1 (en)
DE (1) DE69514343T2 (en)
WO (1) WO1996016435A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
DE19730715C1 (en) * 1996-11-12 1998-11-26 Fraunhofer Ges Forschung Method of manufacturing a micromechanical relay
FI981457A0 (en) 1998-06-24 1998-06-24 Valtion Teknillinen Micromechanical AC and DC reference device
DE19903195B4 (en) * 1999-01-27 2005-05-19 Infineon Technologies Ag Method for improving the quality of metal interconnects on semiconductor structures
US6316282B1 (en) 1999-08-11 2001-11-13 Adc Telecommunications, Inc. Method of etching a wafer layer using multiple layers of the same photoresistant material
US6229640B1 (en) 1999-08-11 2001-05-08 Adc Telecommunications, Inc. Microelectromechanical optical switch and method of manufacture thereof
US6242363B1 (en) 1999-08-11 2001-06-05 Adc Telecommunications, Inc. Method of etching a wafer layer using a sacrificial wall to form vertical sidewall
US6801682B2 (en) 2001-05-18 2004-10-05 Adc Telecommunications, Inc. Latching apparatus for a MEMS optical switch
DE10146545A1 (en) * 2001-09-21 2003-04-10 Merck Patent Gmbh microcomponent
US6824278B2 (en) * 2002-03-15 2004-11-30 Memx, Inc. Self-shadowing MEM structures
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US8129801B2 (en) * 2006-01-06 2012-03-06 Honeywell International Inc. Discrete stress isolator attachment structures for MEMS sensor packages
US11279614B2 (en) 2019-06-28 2022-03-22 Analog Devices, Inc. Low-parasitic capacitance MEMS inertial sensors and related methods

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679434A (en) * 1985-07-25 1987-07-14 Litton Systems, Inc. Integrated force balanced accelerometer
US4851080A (en) * 1987-06-29 1989-07-25 Massachusetts Institute Of Technology Resonant accelerometer
US4948757A (en) * 1987-04-13 1990-08-14 General Motors Corporation Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures
EP0547742A1 (en) * 1991-12-19 1993-06-23 Motorola, Inc. Triaxial accelerometer
EP0560661A1 (en) * 1992-03-09 1993-09-15 Sagem Sa Capacitive acceleration sensor and non counterbalancing accelerometer using such a sensor
EP0566943A1 (en) * 1992-04-21 1993-10-27 Asulab S.A. Means for positioning a microelectronic device and arrangement for mounting such a device
EP0604212A1 (en) * 1992-12-25 1994-06-29 Nec Corporation Semiconductor sensor for sensing a physical quantity

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8921722D0 (en) * 1989-09-26 1989-11-08 British Telecomm Micromechanical switch
US5326726A (en) * 1990-08-17 1994-07-05 Analog Devices, Inc. Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure
JP3627761B2 (en) * 1994-03-09 2005-03-09 株式会社デンソー Manufacturing method of semiconductor dynamic quantity sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679434A (en) * 1985-07-25 1987-07-14 Litton Systems, Inc. Integrated force balanced accelerometer
US4948757A (en) * 1987-04-13 1990-08-14 General Motors Corporation Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures
US4851080A (en) * 1987-06-29 1989-07-25 Massachusetts Institute Of Technology Resonant accelerometer
EP0547742A1 (en) * 1991-12-19 1993-06-23 Motorola, Inc. Triaxial accelerometer
EP0560661A1 (en) * 1992-03-09 1993-09-15 Sagem Sa Capacitive acceleration sensor and non counterbalancing accelerometer using such a sensor
EP0566943A1 (en) * 1992-04-21 1993-10-27 Asulab S.A. Means for positioning a microelectronic device and arrangement for mounting such a device
EP0604212A1 (en) * 1992-12-25 1994-06-29 Nec Corporation Semiconductor sensor for sensing a physical quantity

Also Published As

Publication number Publication date
EP0752159A1 (en) 1997-01-08
DE69514343D1 (en) 2000-02-10
US5814554A (en) 1998-09-29
DE69514343T2 (en) 2000-08-10
WO1996016435A2 (en) 1996-05-30
EP0752159B1 (en) 2000-01-05
JPH09508503A (en) 1997-08-26
JP3936736B2 (en) 2007-06-27
KR970700934A (en) 1997-02-12
KR100398292B1 (en) 2004-07-27

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