WO1996024839A2 - Method and apparatus for predicting process characteristics of polyurethane pads - Google Patents
Method and apparatus for predicting process characteristics of polyurethane pads Download PDFInfo
- Publication number
- WO1996024839A2 WO1996024839A2 PCT/US1996/001027 US9601027W WO9624839A2 WO 1996024839 A2 WO1996024839 A2 WO 1996024839A2 US 9601027 W US9601027 W US 9601027W WO 9624839 A2 WO9624839 A2 WO 9624839A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pad
- measuring
- wafer
- mechanical planarization
- chemical mechanical
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
Definitions
- This invention relates to the use of chemical mechanical planarization (CMP) in the manufacture of semiconductor integrated circuits and more particularly to prediction of performance characteristics of polyurethane pads used for CMP of semiconductor wafers.
- CMP chemical mechanical planarization
- CMP chemical mechanical planarization
- the polishing pad is typically formed of a polyurethane material.
- Downward pressure on the wafer against the pad, rotational speed of the wafer and the pad, slurry content and pad characteristics determine the rate at which material is removed from the surface of the wafer, and the uniformity of the resulting wafer surface.
- the conditioning process comprises a controlled abrasion of the polishing pad surface for the purpose of returning the pad to a state where it can sustain polishing.
- the ability of the conditioning process to return the pad to a state where it can efficiently planarize an additional wafer is dependent upon the pad itself and the conditioning parameters. After planarizing several hundred wafers, the pad may no longer be useful for planarizing wafers despite the conditioning process.
- a measurement of chemical bonding of polymer chains within a polyurethane pad manufactured for chemical mechanical planarization (CMP) of semiconductor wafers is used to predict performance characteristics of the pad, and to adjust process parameters for the subsequent manufacture of additional polyurethane pads.
- CMP chemical mechanical planarization
- one pad or a portion of a pad from the manufacturing lot is soaked in an organic solvent which causes the pad material to swell. It is believed that the relative increase in size is indicative of chemical bonding of polymer chains within the pad. The increase in pad size is indicative of the performance characteristics of the pad.
- Statistical Process Control methods are used to optimize the pad manufacturing process.
- a manufacturing lot may consist of any number of pads which are deemed to have been manufactured under conditions which tend to cause all pads within the lot to have very similar performance characteristics. Measurements of pad performance predictors allow predicted pad characteristics to be available for each pad. The predicted performance characteristics may be used as a measure of quality of the pad, and may also be provided to pad end users.
- Pad characteristic measurements may be taken before any wafers are planarized. Measurements may also be taken after each wafer is planarized or at intervals throughout the life of the pad. Repeated use of the pad impacts the polishing/planarizing ability of the pad.
- polyurethane pads are often exposed to high pH (9.0 to 13.0) and high temperature (0 to 90C) environments. A correlation between fluorescence characteristics and pad performance has been noted in pads that have been exposed to such conditions.
- in-situ fluorescence measurements of the pad are performed. The fluorescence characteristics of the pad are also believed to be indicative of the chemical bonding of polymer chains within the pad, and are used to predict the effect conditioning will have on the pad. The predicted effect of conditioning is then used to predict performance characteristics of the pad.
- the measurement of pad fluorescence characteristics also allows for worn or substandard pads to be replaced prior to wafer processing.
- FIG. 1 is a plot of fluorescence wavelength versus intensity for a CMP pad
- FIG. 2 is a plot of fluorescence wavelength peak divided by 436 nanometers versus wafer material removal rate of a CMP pad
- FIG. 3 is a plot of pad swelling versus wafer material removal rate
- FIG. 4 is a diagram of an apparatus for in-situ measurement of the fluorescence characteristics of a CMP pad.
- FIG. 1 shows the fluorescence properties of a typical polyurethane CMP pad before (PRE) and after (POST) a five hour exposure to a pH 10.5 solution at a temperature of 60C. After exposure, there is a shift in the spectra to shorter wavelengths. The amount of shift varies from pad to pad. Two characteristic intensity peaks are noted in the spectra. One at approximately 436 nanometers and a second maximum peak at a wavelength which varies from pad to pad.
- a pad is exposed to the high pH and high temperature environment prior to making the fluorescence measurement so that the measurement is made after the characteristic shift in wavelengths.
- FIG. 2 shows a plot of maximum fluorescence intensity divided by the intensity at 436 nanometers versus the planarization rate of a semiconductor device wafer.
- This plot shows a relationship between the fluorescence characteristics of the CMP pad and the pad's ability to planarize a semiconductor wafer.
- the planarizing rate is also related to the process stability, defect density and uniformity of the processed wafer. Knowledge of the performance characteristics of the pad allows for substandard pads to be rejected prior to use, this in turn reduces the amount of wafer material needed to be scrapped.
- FIG. 3 is a plot of the swelling of a portion of a CMP pad soaked in N- Methyl-2-pyrrolidone (NMP) for twenty-four hours versus the rate of planarization of a semiconductor device wafer which is planarized by the pad. Increases in swelling beyond twenty-four hours are not very large; however, longer or shorter periods of time may be used.
- the swelling measurement shown is a measurement of increase in pad area. The increase in pad volume, or simply the increase in length of a strip of pad material may also be used. Greater swelling indicates that the planarization rate will be lower. It is believed that other organic solvents such as MEK, MIBK, THF, Xylene and MeC12 may be used with similar results.
- the plots of FIGs. 1, 2 and 3 show that measurements of polyurethane pad characteristics can be used to predict the planarization characteristics of the pad.
- the predicted planarization characteristics allow for a determination of planarization time in a CMP process.
- Predicted planarization characteristics of a CMP pad can also be used for process control and quality control in the manufacture of CMP pads. This data may be sent with the pads to CMP pad customers in the form of predicted planarization characteristics for particular CMP processes.
- the inventive method of measuring pad characteristics may be used to perform incoming inspection on the pads. Substandard pads can be rejected before they are ever used.
- FIG. 4 shows an in-situ method of measuring fluorescence characteristics of CMP pads in a CMP apparatus.
- a pad 10 is secured to a platen 20 which is rotateable.
- a radiation source 30 is secured above the pad surface.
- the radiation source may be a source of ultraviolet light which is directed at the pad.
- the wavelength of the source is preferably below 350 nanometers.
- An electromagnetic radiation detection device, or photodetector, 40 is mounted above the pad surface. Emission from the pad is typically in the range of 200 nanometers to 800 nanometers.
- a measure of intensity versus wavelength of electromagnetic radiation is used to determine when the pad should be replaced, and how the pad will perform when processing wafers. This prediction of pad performance is used to adjust the CMP process variables in order to achieve consistent CMP results with fewer end point detection measurement requirements.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69635984T DE69635984T2 (en) | 1995-02-09 | 1996-01-30 | METHOD FOR POLISHING A WATER AND METHOD FOR PRODUCING AN INTEGRATED CIRCUIT |
JP52428596A JP3203254B2 (en) | 1995-02-09 | 1996-01-30 | Method and apparatus for predicting process characteristic values of polyurethane pad |
AU51683/96A AU5168396A (en) | 1995-02-09 | 1996-01-30 | Method and apparatus for predicting process characteristics of polyurethane pads |
EP96908448A EP0809798B1 (en) | 1995-02-09 | 1996-01-30 | Method for polishing a wafer and method for manufacturing an integrated circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/386,023 | 1995-02-09 | ||
US08/386,023 US5698455A (en) | 1995-02-09 | 1995-02-09 | Method for predicting process characteristics of polyurethane pads |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1996024839A2 true WO1996024839A2 (en) | 1996-08-15 |
WO1996024839A3 WO1996024839A3 (en) | 1996-09-26 |
Family
ID=23523837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/001027 WO1996024839A2 (en) | 1995-02-09 | 1996-01-30 | Method and apparatus for predicting process characteristics of polyurethane pads |
Country Status (8)
Country | Link |
---|---|
US (3) | US5698455A (en) |
EP (1) | EP0809798B1 (en) |
JP (1) | JP3203254B2 (en) |
KR (1) | KR100236499B1 (en) |
AT (1) | ATE321627T1 (en) |
AU (1) | AU5168396A (en) |
DE (1) | DE69635984T2 (en) |
WO (1) | WO1996024839A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7413986B2 (en) | 2001-06-19 | 2008-08-19 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
SG153668A1 (en) * | 2003-03-25 | 2009-07-29 | Neopad Technologies Corp | Customized polish pads for chemical mechanical planarization |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5698455A (en) * | 1995-02-09 | 1997-12-16 | Micron Technologies, Inc. | Method for predicting process characteristics of polyurethane pads |
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
KR100524510B1 (en) | 1996-06-25 | 2006-01-12 | 가부시키가이샤 에바라 세이사꾸쇼 | Method and apparatus for dressing abrasive cloth |
US6408220B1 (en) * | 1999-06-01 | 2002-06-18 | Applied Materials, Inc. | Semiconductor processing techniques |
US6361409B1 (en) | 1999-09-28 | 2002-03-26 | Rodel Holdings Inc. | Polymeric polishing pad having improved surface layer and method of making same |
US6560503B1 (en) * | 1999-10-05 | 2003-05-06 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring controller performance using statistical process control |
US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
US6449524B1 (en) * | 2000-01-04 | 2002-09-10 | Advanced Micro Devices, Inc. | Method and apparatus for using equipment state data for run-to-run control of manufacturing tools |
US6498101B1 (en) | 2000-02-28 | 2002-12-24 | Micron Technology, Inc. | Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6612901B1 (en) | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6520834B1 (en) | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6736869B1 (en) | 2000-08-28 | 2004-05-18 | Micron Technology, Inc. | Method for forming a planarizing pad for planarization of microelectronic substrates |
US6838382B1 (en) | 2000-08-28 | 2005-01-04 | Micron Technology, Inc. | Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates |
US6592443B1 (en) * | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6609947B1 (en) | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
US6623329B1 (en) | 2000-08-31 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for supporting a microelectronic substrate relative to a planarization pad |
US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6764574B1 (en) * | 2001-03-06 | 2004-07-20 | Psiloquest | Polishing pad composition and method of use |
US6866566B2 (en) | 2001-08-24 | 2005-03-15 | Micron Technology, Inc. | Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces |
US6666749B2 (en) | 2001-08-30 | 2003-12-23 | Micron Technology, Inc. | Apparatus and method for enhanced processing of microelectronic workpieces |
US7341502B2 (en) | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7030603B2 (en) | 2003-08-21 | 2006-04-18 | Micron Technology, Inc. | Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece |
US7294049B2 (en) | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
US8388614B2 (en) * | 2009-09-29 | 2013-03-05 | Covidien Lp | Return electrode temperature prediction |
JP5479189B2 (en) * | 2010-03-31 | 2014-04-23 | 富士紡ホールディングス株式会社 | Sheet material selection method |
US11260495B2 (en) * | 2018-07-27 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and methods for chemical mechanical polishing |
KR102277418B1 (en) * | 2019-05-21 | 2021-07-14 | 에스케이씨솔믹스 주식회사 | Polishing pad with improved crosslinking density and preparation method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5483568A (en) * | 1994-11-03 | 1996-01-09 | Kabushiki Kaisha Toshiba | Pad condition and polishing rate monitor using fluorescence |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5081796A (en) * | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
DE4102767A1 (en) * | 1991-01-31 | 1992-08-06 | Metallgesellschaft Ag | METHOD FOR QUALITATIVE ANALYSIS OF PLASTIC PARTICLES |
US5698455A (en) * | 1995-02-09 | 1997-12-16 | Micron Technologies, Inc. | Method for predicting process characteristics of polyurethane pads |
-
1995
- 1995-02-09 US US08/386,023 patent/US5698455A/en not_active Expired - Lifetime
-
1996
- 1996-01-30 JP JP52428596A patent/JP3203254B2/en not_active Expired - Fee Related
- 1996-01-30 DE DE69635984T patent/DE69635984T2/en not_active Expired - Lifetime
- 1996-01-30 AT AT96908448T patent/ATE321627T1/en not_active IP Right Cessation
- 1996-01-30 WO PCT/US1996/001027 patent/WO1996024839A2/en active IP Right Grant
- 1996-01-30 AU AU51683/96A patent/AU5168396A/en not_active Abandoned
- 1996-01-30 KR KR1019970705429A patent/KR100236499B1/en not_active IP Right Cessation
- 1996-01-30 EP EP96908448A patent/EP0809798B1/en not_active Expired - Lifetime
-
1997
- 1997-08-20 US US08/914,994 patent/US6114706A/en not_active Expired - Lifetime
-
2000
- 2000-08-16 US US09/641,165 patent/US6440319B1/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5483568A (en) * | 1994-11-03 | 1996-01-09 | Kabushiki Kaisha Toshiba | Pad condition and polishing rate monitor using fluorescence |
Non-Patent Citations (5)
Title |
---|
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no. 4, September 1978, NEW YORK, US, page 1433 XP002009653 ANONYMOUS: "Selective Staining Method for Studying Polishing Pads. September 1978." * |
MAT. RES. SOC. SYMP. PROC. , vol. 337, 4 April 1994, PITTSBURGH, PA, USA, pages 637-644, XP000577630 RAJEEV BAJAJ: "effect of polishing pad material properties on chemical mechanical polishing (CMP) processes" * |
MAT.REX.SOC.SYMP.PROC., vol. 337, 4 April 1994, PITTSBURGH, PA, USA, pages 121-131, XP000563165 R. JAIRATH ET AL.: "consumables for the chemical mechanical polishing (CMP) of dielectrics and conductors" * |
MATER. RES. SOC. SYMP. PROC., vol. 260, 27 April 1992, PITTSBURGH, PA, USA, pages 53-64, XP000577620 S. SIVARAM ET AL.: "chemical mechanical polishing of interlevel dielectrics: models for emoval rate and planarity" * |
See also references of EP0809798A2 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7413986B2 (en) | 2001-06-19 | 2008-08-19 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
SG153668A1 (en) * | 2003-03-25 | 2009-07-29 | Neopad Technologies Corp | Customized polish pads for chemical mechanical planarization |
Also Published As
Publication number | Publication date |
---|---|
DE69635984D1 (en) | 2006-05-18 |
ATE321627T1 (en) | 2006-04-15 |
US6114706A (en) | 2000-09-05 |
JP3203254B2 (en) | 2001-08-27 |
WO1996024839A3 (en) | 1996-09-26 |
JPH10508799A (en) | 1998-09-02 |
AU5168396A (en) | 1996-08-27 |
US6440319B1 (en) | 2002-08-27 |
EP0809798A2 (en) | 1997-12-03 |
KR19980702034A (en) | 1998-07-15 |
US5698455A (en) | 1997-12-16 |
EP0809798B1 (en) | 2006-03-29 |
DE69635984T2 (en) | 2007-01-11 |
KR100236499B1 (en) | 2000-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6440319B1 (en) | Method and apparatus for predicting process characteristics of polyurethane pads | |
JP5871226B2 (en) | Chemical mechanical polishing pad having light stable polymer end point detection window and polishing method using the same | |
KR100435246B1 (en) | Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device | |
US6159075A (en) | Method and system for in-situ optimization for semiconductor wafers in a chemical mechanical polishing process | |
JP5542802B2 (en) | Endpoint detection in chemical mechanical polishing using multiple spectra | |
US7175505B1 (en) | Method for adjusting substrate processing times in a substrate polishing system | |
US8687197B2 (en) | Method of monitoring progress of substrate polishing and polishing apparatus | |
JP6017538B2 (en) | Construction of a reference spectrum with changes in environmental influences | |
JP2002124496A (en) | Method and equipment for detecting and measuring end point of polishing process, and method and equipment for manufacturing semiconductor device using the same for detecting and measuring end point of polishing process | |
JPH1177525A (en) | Method and device monitoring thickness on the spot using multiplex wave length spectrometer during chemical and mechanical polishing | |
US7537511B2 (en) | Embedded fiber acoustic sensor for CMP process endpoint | |
US20020106971A1 (en) | Method and apparatus for conditioning a polishing pad | |
US6464563B1 (en) | Method and apparatus for detecting dishing in a polished layer | |
KR102390145B1 (en) | Chemical mechanical polishing pad with endpoint detection window | |
US6609946B1 (en) | Method and system for polishing a semiconductor wafer | |
US7988529B2 (en) | Methods and tools for controlling the removal of material from microfeature workpieces | |
US6335286B1 (en) | Feedback control of polish buff time as a function of scratch count | |
CN111571423A (en) | Substrate grinding system | |
US6709312B2 (en) | Method and apparatus for monitoring a polishing condition of a surface of a wafer in a polishing process | |
JP2005347530A (en) | Polishing pad adjustment method and chemical mechanical polishing equipment | |
US6729935B2 (en) | Method and system for in-situ monitoring of mixing ratio of high selectivity slurry | |
TWI245682B (en) | Polishing pad having multi-windows |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AL AM AT AU AZ BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU IS JP KE KG KP KR KZ LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG UZ VN |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG |
|
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AL AM AT AU AZ BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU IS JP KE KG KP KR KZ LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG UZ VN |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1019970705429 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1996908448 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1996908448 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 1019970705429 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1019970705429 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1996908448 Country of ref document: EP |