WO1996024898A1 - Apparatus for entering and executing test mode operations for memory - Google Patents
Apparatus for entering and executing test mode operations for memory Download PDFInfo
- Publication number
- WO1996024898A1 WO1996024898A1 PCT/US1996/001695 US9601695W WO9624898A1 WO 1996024898 A1 WO1996024898 A1 WO 1996024898A1 US 9601695 W US9601695 W US 9601695W WO 9624898 A1 WO9624898 A1 WO 9624898A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- voltage
- enable
- test
- signal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
- G06F11/26—Functional testing
- G06F11/267—Reconfiguring circuits for testing, e.g. LSSD, partitioning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/46—Test trigger logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
Definitions
- the present invention relates generally to semiconductor circuits and packaged integrated circuits, such as memory chips, data registers and the like. More particularly, the present invention relates to circuitry for generating test-mode signals.
- test modes are non-user modes that are typically used for stressing or changing the internal settings of the parts. The accidental or even intentional use of such modes by a user could damage the part.
- Some test- mode enable schemes use high voltage signals to execute a test mode. With these approaches, however, a noisy set-up may potentially trigger a test mode. Still other schemes require a complicated software sequencing to achieve the desired test modes. With these test modes, however, software alone might still too easily allow a user to trigger a test mode, which could adversely affect the part.
- the present invention provides an improved circuit for generating test-mode signals, which may be used, for example, in testing memory chips.
- the present invention is implemented in the form of a circuit for generating an enable signal for testing a circuit, comprising: a first voltage detector for detecting a test-activation voltage; a second voltage detector for detecting the test-activation voltage; a first latch for receiving a test signal; and an enable circuit, coupled to the first and second voltage detectors and the latch, for decoding the test signal to determine if the test signal is valid and for generating an enable signal if the test signal is valid and the first and second voltage detectors detect the test-activation voltage.
- the present invention comprises a method of generating an enable signal for testing a circuit, comprising the steps of: detecting an activation voltage; receiving a test signal; decoding the test signal in order to determine if the test signal is valid; and generating an enable signal when the activation voltage is detected if the test signal is valid.
- FIG. 1 is a first exemplary test mode circuit in accordance with the principles of the present invention
- FIG. 2 is a second exemplary test mode circuit in accordance with the principles of the present invention
- FIG. 3 is an exemplary detector activation logic circuit in accordance with the principles of the present invention.
- FIG. 4 is an exemplary circuit for test mode format checking and decoding in according with the principles of the present invention.
- FIG. 5 is a block diagram of an exemplary computer with a memory for use with the present invention.
- the present invention has a wide variety of applications in circuits or parts that use test modes or signals.
- the present invention may be used for generating test modes or signals for use with EPROMs, flash EPROMs, EEPROMs, DRAMs, and SRAMs.
- the present invention provides for a scheme to enter and execute different test modes that minimizes the chances of accidental entry of test modes. It also provides safeguards to ensure that test modes are only activated when specific conditions are present that are not usually available on the normal systems. More particularly, the present invention provides a scheme to enter a test mode that uses both hardware and software protection, preferably maintaining maximum hardware protection during entry and both maximum software and hardware protection during execution.
- At least one of the pins (11, 12) must remain high during the entire duration of the test mode; otherwise the entire test mode is discontinued and all latches are reset;
- test mode code is compared with decoding logic against predetermined codes and code formats in order for the part to enter the desired mode.
- FIG. 1 is a schematic diagram of an exemplary circuit for implementing the present invention.
- the circuit preferably operates as follows for generating test code signals.
- a high voltage is placed on two or more pins 11 and 12 in order to initiate the test mode.
- the high voltage is detected by detectors 13 and 14 , which may be implemented with known detector circuits.
- the ⁇ CE signal is brought low and appropriate test mode codes are placed on I/O lines 17 and into buffer 18.
- the AND gate 15 ensures that both inputs 11 and 12 have a high voltage in order initiate the test code process.
- the output of the AND gate 15 and the ⁇ CE signal form the inputs to AND gate 16. Therefore, with both inputs 11 and 12 HIGH, one input to gate 16 will be HIGH.
- test mode code latch 20 When the other input ( ⁇ CE ) to gate 16 is also HIGH, the output of gate 16 is HIGH and turns on transistor 19, which functions as a switch to transfer the I/O signal from the buffer 18 to a test mode code latch 20.
- the latch 20 is preferably an eight one-bit latches arranged in parallel . On the high going edge of the ⁇ CE signal, the test mode code is latched into a test mode code latch 20. Since two or more pins 11 and
- two pins are preferably at a high voltage to load the test mode code and then one of the pins is brought to a low voltage to shut off the loading.
- circuit 13 operates under a type of hysteresis effect controlled by ⁇ WE . Circuit
- FIG. 2 shows an alternate embodiment of the exemplary circuit of FIG. 1. In the circuit of FIG. 2, the locations of the latch 20 and circuit 22 are essentially reversed such that the output of the circuit 22 is transmitted via transistor 19 to the latch 20. Otherwise, the alternate embodiment of FIG. 2 operates in a similar manner as described above with respect to the circuit of FIG. 1.
- FIG. 3 is an exemplary high voltage detection circuitry (detector activation logic) for determining whether a pin has higher voltage than a predetermined voltage, such as 9 volts. Since most high voltage detect circuits draw current when enabled, the ⁇ CE signal is typically used to power up the detectors. The ⁇ pin toggles to load the test mode codes into the latch 20 and decoding logic 22. However, this also would result in the output of a high voltage detector within the circuit to switch from HIGH to LOW at the high-going edge of ⁇ CE and hence reset the test mode. To prevent this undesired effect, the detector activation logic 10 shown in FIGS. 1 or 2 is used to ensure that once the output of the high voltage detector is asserted during the test mode, ⁇ CE is no longer used to power up the detectors and that the test mode is not reset unless ⁇ WE falls below a predetermined voltage.
- a predetermined voltage such as 9 volts.
- the logic circuit 10 is initially activated by the ⁇ CE signal, which turns on transistor 36 and raises the voltage at input 26b.
- the " CE signal also enables voltage detector 13 through inverter 34. Once the output of the voltage detector 13 is asserted signifying that E is a high voltage, so that the both inputs to gate 26 are HIGH, a latch is set to keep the high voltage detectors powered up even if ⁇ CE toggles or changes value.
- the latch is formed by NAND gate 26 and inverter 28. This ensures that if the ⁇ CE signal toggles after setting the latch, the internal test mode execute enable signal remains valid as long as WE remains at a high voltage. This latch is reset if the
- the detector activation logic circuit 10 ensures that if the " WE pin obtains a high voltage on it due to noise, the circuit will not stay in the test mode unless a DC voltage higher than the predetermined voltage remains on the " WE pin. This provides the hardware protection during the execution.
- the codes are preferably of a specific format, therefore reducing the possibility of mistakenly entering test modes.
- the codes and their format are preferably sufficiently different than regular commands used to issue activities in the chip.
- the test mode code is typically divided into two groups of bits. The first is a set of bits that have the same value for a set of different test codes. This section of the code is referred to as the format.
- the other bits in the code are used to decode the different test modes. This feature not only makes it safer to keep the test mode codes different from the regular commands, it reduces the circuitry needed to decode the different test modes .
- That portion of the code requires only one decoder, as opposed to one for each code. For example, if the circuit requires that bits 0- 3 of the code be the Hexadecimal value "A" , only one four-bit decoder is required to identify the format . Other four-bit decoders are needed for bits 4-7. The output of those decoders is "ANDed" with the output of the single format decoder.
- FIG. 4 is an exemplary circuit for test mode format checking and decoding performed by the circuit 22 which performs the decoding of the test code signals.
- FIG. 5 is a block diagram of a computer 40 that includes a memory which may be used with the present invention.
- the computer 40 includes a microprocessor 42 and corresponding clock 41.
- the microprocessor 42 contains the central processing unit (CPU) and associated control circuitry.
- the microprocessor 42 is connected to a motherboard 44.
- An I/O interface module 43 is connected to the motherboard 44 and interfaces the microprocessor 42 with peripheral devices such as a monitor and printer.
- the motherboard 44 also contains a plurality of memory modules for storing data, such as single in-line memory modules (SIMMs) 45A-45N.
- SIMMs 45A-45N are typically implemented with integrated circuit packages which "plug into" the motherboard 44.
- the circuit shown in FIG. 1 may also implemented in an integrated circuit package within the computer 40.
- a nonvolatile memory is usually used on the motherboard 44, SIMMs 45A-45N, or through the I/O interface module 43.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69603711T DE69603711T2 (en) | 1995-02-10 | 1996-02-08 | DEVICE AND METHOD FOR SETTING AND CARRYING OUT TEST MODE OPERATIONS IN A MEMORY |
JP52441796A JP3312031B2 (en) | 1995-02-10 | 1996-02-08 | Apparatus for inputting and executing test mode operation for memory |
KR1019970705524A KR100307790B1 (en) | 1995-02-10 | 1996-02-08 | Apparatus for entering and executing test mode operations for memory |
EP96906328A EP0808487B1 (en) | 1995-02-10 | 1996-02-08 | Apparatus and method for entering and executing test mode operations for memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/386,704 US5526364A (en) | 1995-02-10 | 1995-02-10 | Apparatus for entering and executing test mode operations for memory |
US08/386,704 | 1995-02-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996024898A1 true WO1996024898A1 (en) | 1996-08-15 |
Family
ID=23526698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/001695 WO1996024898A1 (en) | 1995-02-10 | 1996-02-08 | Apparatus for entering and executing test mode operations for memory |
Country Status (7)
Country | Link |
---|---|
US (1) | US5526364A (en) |
EP (1) | EP0808487B1 (en) |
JP (1) | JP3312031B2 (en) |
KR (1) | KR100307790B1 (en) |
AT (1) | ATE183318T1 (en) |
DE (1) | DE69603711T2 (en) |
WO (1) | WO1996024898A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2330208A (en) * | 1996-12-23 | 1999-04-14 | Holtek Microelectronics Inc | Integrated circuit with a built-in test mode activation system |
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US5627478A (en) | 1995-07-06 | 1997-05-06 | Micron Technology, Inc. | Apparatus for disabling and re-enabling access to IC test functions |
US5627784A (en) * | 1995-07-28 | 1997-05-06 | Micron Quantum Devices, Inc. | Memory system having non-volatile data storage structure for memory control parameters and method |
US5801985A (en) * | 1995-07-28 | 1998-09-01 | Micron Technology, Inc. | Memory system having programmable control parameters |
US5793775A (en) * | 1996-01-26 | 1998-08-11 | Micron Quantum Devices, Inc. | Low voltage test mode operation enable scheme with hardware safeguard |
US6052321A (en) * | 1997-04-16 | 2000-04-18 | Micron Technology, Inc. | Circuit and method for performing test on memory array cells using external sense amplifier reference current |
US5787096A (en) * | 1996-04-23 | 1998-07-28 | Micron Technology, Inc. | Circuit and method for testing an integrated circuit |
US5787097A (en) * | 1996-07-22 | 1998-07-28 | Micron Technology, Inc. | Output data compression scheme for use in testing IC memories |
US5727001A (en) * | 1996-08-14 | 1998-03-10 | Micron Technology, Inc. | Circuit and method for testing an integrated circuit |
US5754559A (en) * | 1996-08-26 | 1998-05-19 | Micron Technology, Inc. | Method and apparatus for testing integrated circuits |
US5996106A (en) * | 1997-02-04 | 1999-11-30 | Micron Technology, Inc. | Multi bank test mode for memory devices |
US5913928A (en) | 1997-05-09 | 1999-06-22 | Micron Technology, Inc. | Data compression test mode independent of redundancy |
US6594168B2 (en) * | 1997-05-30 | 2003-07-15 | Micron Technology, Inc. | 256 Meg dynamic random access memory |
US6314011B1 (en) | 1997-08-22 | 2001-11-06 | Micron Technology Inc | 256 Meg dynamic random access memory |
US6674310B1 (en) | 1997-05-30 | 2004-01-06 | Brent Keeth | 256 Meg dynamic random access memory |
WO1998054727A2 (en) | 1997-05-30 | 1998-12-03 | Micron Technology, Inc. | 256 Meg DYNAMIC RANDOM ACCESS MEMORY |
US6141247A (en) * | 1997-10-24 | 2000-10-31 | Micron Technology, Inc. | Non-volatile data storage unit and method of controlling same |
KR100449177B1 (en) * | 1997-12-30 | 2005-01-13 | 주식회사 하이닉스반도체 | High voltage detecting circuit to avoid loss of pad due to stress and perform stable test process even if high voltage varies during performance of test command |
US6119252A (en) | 1998-02-10 | 2000-09-12 | Micron Technology | Integrated circuit test mode with externally forced reference voltage |
US6285608B1 (en) | 1998-03-20 | 2001-09-04 | Micron Technology, Inc. | Method and apparatus for using supply voltage for testing in semiconductor memory devices |
KR100304709B1 (en) * | 1999-07-23 | 2001-11-01 | 윤종용 | Semiconductor Memory Device Whose Data Input/Output Mode can be Controled outside |
KR100487031B1 (en) | 1999-08-23 | 2005-05-03 | 마이크론 테크놀로지, 인크. | Flash memory with externally triggered detection and repair of leaky cells |
US6654847B1 (en) | 2000-06-30 | 2003-11-25 | Micron Technology, Inc. | Top/bottom symmetrical protection scheme for flash |
US6304497B1 (en) | 2000-06-30 | 2001-10-16 | Micron Technology, Inc. | Synchronous memory status register |
US6785765B1 (en) * | 2000-06-30 | 2004-08-31 | Micron Technology, Inc. | Status register to improve initialization of a synchronous memory |
US6675255B1 (en) | 2000-06-30 | 2004-01-06 | Micron Technology, Inc. | Device initialize command for a synchronous memory |
US6697907B1 (en) | 2000-06-30 | 2004-02-24 | Micron Technology, Inc. | Hardware initialization of a synchronous memory |
US6246626B1 (en) | 2000-07-28 | 2001-06-12 | Micron Technology, Inc. | Protection after brown out in a synchronous memory |
US6711701B1 (en) | 2000-08-25 | 2004-03-23 | Micron Technology, Inc. | Write and erase protection in a synchronous memory |
US6865702B2 (en) * | 2001-04-09 | 2005-03-08 | Micron Technology, Inc. | Synchronous flash memory with test code input |
ITRM20010556A1 (en) * | 2001-09-12 | 2003-03-12 | Micron Technology Inc | DECODER TO DECODE SWITCHING COMMANDS IN INTEGRATED CIRCUIT TEST MODE. |
JP3943890B2 (en) * | 2001-10-18 | 2007-07-11 | 富士通株式会社 | Semiconductor device |
US6944812B2 (en) * | 2002-01-15 | 2005-09-13 | Micron Technology, Inc. | Mode entry circuit and method |
US6751139B2 (en) | 2002-05-29 | 2004-06-15 | Micron Technology, Inc. | Integrated circuit reset circuitry |
US7203874B2 (en) * | 2003-05-08 | 2007-04-10 | Micron Technology, Inc. | Error detection, documentation, and correction in a flash memory device |
KR100780768B1 (en) * | 2006-04-12 | 2007-11-30 | 주식회사 하이닉스반도체 | High Voltage Pumping Device |
KR100844485B1 (en) | 2006-09-11 | 2008-07-07 | 엠텍비젼 주식회사 | Test mode entry/decision circuit for semiconductor device, semiconductor device having the same, and method of entering test mode and determining test mode of semiconductor |
LT3920471T (en) * | 2009-09-08 | 2024-02-26 | Abbott Diabetes Care, Inc. | Methods and articles of manufacture for hosting a safety critical application on an uncontrolled data processing device |
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US4816656A (en) * | 1986-01-14 | 1989-03-28 | Casio Computer Co., Ltd. | IC card system |
DE3903714A1 (en) * | 1988-03-14 | 1989-09-28 | Mitsubishi Electric Corp | SEMICONDUCTOR MEMORY DEVICE WITH A TEST MODE SETTING CIRCUIT |
US5245577A (en) * | 1990-11-06 | 1993-09-14 | Micron Technology, Inc. | Integrated circuit two-cycle test mode activation circuit |
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US5077738A (en) * | 1988-12-30 | 1991-12-31 | Intel Corporation | Test mode enable scheme for memory |
-
1995
- 1995-02-10 US US08/386,704 patent/US5526364A/en not_active Expired - Lifetime
-
1996
- 1996-02-08 DE DE69603711T patent/DE69603711T2/en not_active Expired - Lifetime
- 1996-02-08 KR KR1019970705524A patent/KR100307790B1/en not_active IP Right Cessation
- 1996-02-08 EP EP96906328A patent/EP0808487B1/en not_active Expired - Lifetime
- 1996-02-08 JP JP52441796A patent/JP3312031B2/en not_active Expired - Fee Related
- 1996-02-08 AT AT96906328T patent/ATE183318T1/en not_active IP Right Cessation
- 1996-02-08 WO PCT/US1996/001695 patent/WO1996024898A1/en active IP Right Grant
Patent Citations (3)
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US4816656A (en) * | 1986-01-14 | 1989-03-28 | Casio Computer Co., Ltd. | IC card system |
DE3903714A1 (en) * | 1988-03-14 | 1989-09-28 | Mitsubishi Electric Corp | SEMICONDUCTOR MEMORY DEVICE WITH A TEST MODE SETTING CIRCUIT |
US5245577A (en) * | 1990-11-06 | 1993-09-14 | Micron Technology, Inc. | Integrated circuit two-cycle test mode activation circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2330208A (en) * | 1996-12-23 | 1999-04-14 | Holtek Microelectronics Inc | Integrated circuit with a built-in test mode activation system |
Also Published As
Publication number | Publication date |
---|---|
US5526364A (en) | 1996-06-11 |
DE69603711T2 (en) | 1999-12-02 |
JPH10513589A (en) | 1998-12-22 |
ATE183318T1 (en) | 1999-08-15 |
KR100307790B1 (en) | 2001-10-19 |
KR19980702129A (en) | 1998-07-15 |
EP0808487B1 (en) | 1999-08-11 |
DE69603711D1 (en) | 1999-09-16 |
EP0808487A1 (en) | 1997-11-26 |
JP3312031B2 (en) | 2002-08-05 |
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