WO1996025741A3 - Mehrwertige festwertspeicherzelle mit verbessertem störabstand - Google Patents

Mehrwertige festwertspeicherzelle mit verbessertem störabstand Download PDF

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Publication number
WO1996025741A3
WO1996025741A3 PCT/DE1996/000168 DE9600168W WO9625741A3 WO 1996025741 A3 WO1996025741 A3 WO 1996025741A3 DE 9600168 W DE9600168 W DE 9600168W WO 9625741 A3 WO9625741 A3 WO 9625741A3
Authority
WO
WIPO (PCT)
Prior art keywords
noise ratio
storage location
improved signal
read
valued read
Prior art date
Application number
PCT/DE1996/000168
Other languages
English (en)
French (fr)
Other versions
WO1996025741A2 (de
Inventor
Doris Schmitt-Landsiedel
Roland Thewes
Michael Bollu
Paul-Werner Basse
Original Assignee
Siemens Ag
Schmitt Landsiedel Doris
Roland Thewes
Michael Bollu
Basse Paul Werner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Schmitt Landsiedel Doris, Roland Thewes, Michael Bollu, Basse Paul Werner filed Critical Siemens Ag
Priority to EP96901232A priority Critical patent/EP0809847B1/de
Priority to DE59600366T priority patent/DE59600366D1/de
Priority to US08/875,955 priority patent/US5825686A/en
Priority to JP8524568A priority patent/JPH11500559A/ja
Publication of WO1996025741A2 publication Critical patent/WO1996025741A2/de
Publication of WO1996025741A3 publication Critical patent/WO1996025741A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data

Abstract

Der Anmeldungsgegenstand betrifft eine mehrwertige Festwertspeicherzelle, die zum Speichern eines ersten oder zweiten Zustandes (M, M''') symmetrisch und zum Speichern mindestens eines dritten Zustandes (M', M') unsymmetrisch aufgebaut ist. Der hiermit erzielte Vorteil liegt vor allem darin, daß ohne nennenswerten Mehraufwand eine Verdopplung der Speicherkapazität erreicht wird, ohne daß der Störabstand gegenüber herkömmlichen Speicherzellen verschlechtert wird. Der Anmeldungsgegenstand eignet sich für elektrisch programmierbare und maskenprogrammierbare Festwertspeicher, insbesondere für solche in Niedervolttechnik.
PCT/DE1996/000168 1995-02-16 1996-02-05 Mehrwertige festwertspeicherzelle mit verbessertem störabstand WO1996025741A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP96901232A EP0809847B1 (de) 1995-02-16 1996-02-05 Mehrwertige festwertspeicherzelle mit verbessertem störabstand
DE59600366T DE59600366D1 (de) 1995-02-16 1996-02-05 Mehrwertige festwertspeicherzelle mit verbessertem störabstand
US08/875,955 US5825686A (en) 1995-02-16 1996-02-05 Multi-value read-only memory cell having an improved signal-to-noise ratio
JP8524568A JPH11500559A (ja) 1995-02-16 1996-02-05 改善されたｓｎ比を有する多値固定値メモリセル

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19505293.5 1995-02-16
DE19505293A DE19505293A1 (de) 1995-02-16 1995-02-16 Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand

Publications (2)

Publication Number Publication Date
WO1996025741A2 WO1996025741A2 (de) 1996-08-22
WO1996025741A3 true WO1996025741A3 (de) 1997-02-06

Family

ID=7754185

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1996/000168 WO1996025741A2 (de) 1995-02-16 1996-02-05 Mehrwertige festwertspeicherzelle mit verbessertem störabstand

Country Status (9)

Country Link
US (1) US5825686A (de)
EP (1) EP0809847B1 (de)
JP (1) JPH11500559A (de)
KR (1) KR19980702220A (de)
CN (1) CN1107321C (de)
AR (1) AR000974A1 (de)
DE (2) DE19505293A1 (de)
IN (1) IN185754B (de)
WO (1) WO1996025741A2 (de)

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CN104978990B (zh) 2014-04-14 2017-11-10 成都海存艾匹科技有限公司 紧凑型三维存储器
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CN110534519B (zh) 2018-05-27 2022-04-22 杭州海存信息技术有限公司 改进的三维纵向存储器

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Also Published As

Publication number Publication date
EP0809847B1 (de) 1998-07-22
IN185754B (de) 2001-04-24
AR000974A1 (es) 1997-08-27
US5825686A (en) 1998-10-20
CN1174628A (zh) 1998-02-25
DE59600366D1 (de) 1998-08-27
KR19980702220A (ko) 1998-07-15
JPH11500559A (ja) 1999-01-12
EP0809847A2 (de) 1997-12-03
WO1996025741A2 (de) 1996-08-22
DE19505293A1 (de) 1996-08-22
CN1107321C (zh) 2003-04-30

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