WO1996041897A3 - Durable plasma treatment apparatus and method - Google Patents

Durable plasma treatment apparatus and method Download PDF

Info

Publication number
WO1996041897A3
WO1996041897A3 PCT/US1996/008581 US9608581W WO9641897A3 WO 1996041897 A3 WO1996041897 A3 WO 1996041897A3 US 9608581 W US9608581 W US 9608581W WO 9641897 A3 WO9641897 A3 WO 9641897A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
longitudinal axis
sidewalls
transverse
work surface
Prior art date
Application number
PCT/US1996/008581
Other languages
French (fr)
Other versions
WO1996041897A2 (en
Inventor
Anthony E Robson
Ronald A Rudder
Robert C Hendry
Moses M David
James V Burt
Original Assignee
Res Triangle Inst
Minnesota Mining & Mfg
Berkeley Scholars Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Res Triangle Inst, Minnesota Mining & Mfg, Berkeley Scholars Inc filed Critical Res Triangle Inst
Priority to AU59759/96A priority Critical patent/AU5975996A/en
Priority to JP9503117A priority patent/JPH11514129A/en
Priority to EP96917073A priority patent/EP0857224A4/en
Publication of WO1996041897A2 publication Critical patent/WO1996041897A2/en
Publication of WO1996041897A3 publication Critical patent/WO1996041897A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Treatment Of Fiber Materials (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled. Also provided is an axially-extending array of current-carrying conductors which at least partially encircle the chamber, are transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber, and a power supply connected to the conductor array and adapted to provide high-frequency current in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber, and wherein the work surface is exposed to the plasma sheath and extends in the direction of the longitudinal axis.
PCT/US1996/008581 1995-06-07 1996-06-06 Durable plasma treatment apparatus and method WO1996041897A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU59759/96A AU5975996A (en) 1995-06-07 1996-06-06 Durable plasma treatment apparatus and method
JP9503117A JPH11514129A (en) 1995-06-07 1996-06-06 Durable plasma processing apparatus and method
EP96917073A EP0857224A4 (en) 1995-06-07 1996-06-06 Durable plasma treatment apparatus and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/483,982 1995-06-07
US08/483,982 US5874014A (en) 1995-06-07 1995-06-07 Durable plasma treatment apparatus and method

Publications (2)

Publication Number Publication Date
WO1996041897A2 WO1996041897A2 (en) 1996-12-27
WO1996041897A3 true WO1996041897A3 (en) 1997-05-09

Family

ID=23922258

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/008581 WO1996041897A2 (en) 1995-06-07 1996-06-06 Durable plasma treatment apparatus and method

Country Status (5)

Country Link
US (2) US5874014A (en)
EP (1) EP0857224A4 (en)
JP (1) JPH11514129A (en)
AU (1) AU5975996A (en)
WO (1) WO1996041897A2 (en)

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US6082294A (en) * 1996-06-07 2000-07-04 Saint-Gobain Industrial Ceramics, Inc. Method and apparatus for depositing diamond film
US7591814B2 (en) * 1997-02-27 2009-09-22 Cryocath Technologies Inc. Extended treatment zone catheter
DE19716330C2 (en) * 1997-04-18 1999-08-26 Fraunhofer Ges Forschung Process for producing a coating on a grinding tool and use of the process
US6558504B1 (en) * 1998-12-21 2003-05-06 Research Triangle Institute Plasma processing system and method
US6530342B1 (en) * 1998-12-30 2003-03-11 Tokyo Electron Limited Large area plasma source
US7622151B2 (en) * 1999-02-10 2009-11-24 Auburn University Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions
US6558742B1 (en) 1999-02-10 2003-05-06 Auburn University Method of hot-filament chemical vapor deposition of diamond
DE19923018C2 (en) * 1999-05-19 2001-09-27 Univ Dresden Tech Device for processing band-shaped workpieces using resonant high-frequency plasmas
US6508911B1 (en) 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
EP1102305B1 (en) * 1999-11-17 2003-05-07 European Community (EC) Plasma processing apparatus with an electrically conductive wall
US6552295B2 (en) 1999-12-20 2003-04-22 Research Triangle Institute Plasma furnace disposal of hazardous wastes
US20040129221A1 (en) * 2003-01-08 2004-07-08 Jozef Brcka Cooled deposition baffle in high density plasma semiconductor processing
WO2008089168A2 (en) * 2007-01-19 2008-07-24 Applied Materials, Inc. Plasma immersion chamber
US20090297409A1 (en) * 2008-05-30 2009-12-03 Buchanan Walter R Discharge plasma reactor
KR101117670B1 (en) * 2009-02-02 2012-03-07 주식회사 테라세미콘 Inductively coupled plasma generation source electrode and substrate processing apparatus comprising the same
US8642974B2 (en) * 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US11452982B2 (en) 2015-10-01 2022-09-27 Milton Roy, Llc Reactor for liquid and gas and method of use
EP4226999A3 (en) 2015-10-01 2023-09-06 Milton Roy, LLC Plasma reactor for liquid and gas and related methods
US10882021B2 (en) 2015-10-01 2021-01-05 Ion Inject Technology Llc Plasma reactor for liquid and gas and method of use
US10187968B2 (en) 2015-10-08 2019-01-22 Ion Inject Technology Llc Quasi-resonant plasma voltage generator
US10046300B2 (en) 2015-12-09 2018-08-14 Ion Inject Technology Llc Membrane plasma reactor
US10632447B2 (en) * 2018-08-28 2020-04-28 Molecule Works Inc. Reactor for hydrothermal growth of structured materials
US11488796B2 (en) * 2019-04-24 2022-11-01 Applied Materials, Inc. Thermal break for high-frequency antennae
AU2020446084A1 (en) * 2020-05-04 2023-01-05 Millennium E & C (M) SDN. BHD. An apparatus and method for solid waste treatment

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US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4990403A (en) * 1989-01-20 1991-02-05 Idemitsu Petrochemical Company Limited Diamond coated sintered body
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5204145A (en) * 1991-03-04 1993-04-20 General Electric Company Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom
US5288969A (en) * 1991-08-16 1994-02-22 Regents Of The University Of California Electrodeless plasma torch apparatus and methods for the dissociation of hazardous waste

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US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
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US5204145A (en) * 1991-03-04 1993-04-20 General Electric Company Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom
US5288969A (en) * 1991-08-16 1994-02-22 Regents Of The University Of California Electrodeless plasma torch apparatus and methods for the dissociation of hazardous waste
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips

Also Published As

Publication number Publication date
JPH11514129A (en) 1999-11-30
US6105518A (en) 2000-08-22
EP0857224A4 (en) 2001-11-07
AU5975996A (en) 1997-01-09
US5874014A (en) 1999-02-23
WO1996041897A2 (en) 1996-12-27
EP0857224A2 (en) 1998-08-12

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