WO1997005523A1 - Improved tft, method of making and matrix displays incorporating the tft - Google Patents
Improved tft, method of making and matrix displays incorporating the tft Download PDFInfo
- Publication number
- WO1997005523A1 WO1997005523A1 PCT/US1996/012439 US9612439W WO9705523A1 WO 1997005523 A1 WO1997005523 A1 WO 1997005523A1 US 9612439 W US9612439 W US 9612439W WO 9705523 A1 WO9705523 A1 WO 9705523A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- source
- drain
- forming
- transistor
- fingers
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000012212 insulator Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 230000006872 improvement Effects 0.000 claims abstract description 19
- 238000003860 storage Methods 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000007743 anodising Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 6
- 230000009977 dual effect Effects 0.000 abstract description 6
- 230000000873 masking effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU66415/96A AU6641596A (en) | 1995-07-31 | 1996-07-30 | Improved tft, method of making and matrix displays incorporating the tft |
JP50784597A JP3273793B2 (en) | 1995-07-31 | 1996-07-30 | Improved TFT, method of manufacturing the TFT and matrix display including the TFT |
EP96926175A EP0842455B1 (en) | 1995-07-31 | 1996-07-30 | Improved tft, method of making and matrix displays incorporating the tft |
DE69624248T DE69624248T2 (en) | 1995-07-31 | 1996-07-30 | IMPROVED TFT, THEIR PRODUCTION PROCESS AND MATRIX DISPLAYS CONTAINING THE TFT |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/497,371 US5737041A (en) | 1995-07-31 | 1995-07-31 | TFT, method of making and matrix displays incorporating the TFT |
US08/497,371 | 1995-07-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997005523A1 true WO1997005523A1 (en) | 1997-02-13 |
Family
ID=23976590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/012439 WO1997005523A1 (en) | 1995-07-31 | 1996-07-30 | Improved tft, method of making and matrix displays incorporating the tft |
Country Status (8)
Country | Link |
---|---|
US (3) | US5737041A (en) |
EP (1) | EP0842455B1 (en) |
JP (1) | JP3273793B2 (en) |
CN (1) | CN1134069C (en) |
AU (1) | AU6641596A (en) |
DE (1) | DE69624248T2 (en) |
TW (1) | TW277147B (en) |
WO (1) | WO1997005523A1 (en) |
Cited By (5)
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FR2754917A1 (en) * | 1996-10-18 | 1998-04-24 | Lg Electronics Inc | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME |
FR2775386A1 (en) * | 1998-02-20 | 1999-08-27 | Lg Electronics Inc | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF |
EP1882978A1 (en) * | 2006-07-25 | 2008-01-30 | Samsung Electronics Co., Ltd. | Liquid crystal display |
US7759735B2 (en) | 2004-08-20 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element |
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US5737041A (en) * | 1995-07-31 | 1998-04-07 | Image Quest Technologies, Inc. | TFT, method of making and matrix displays incorporating the TFT |
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US5731216A (en) * | 1996-03-27 | 1998-03-24 | Image Quest Technologies, Inc. | Method of making an active matrix display incorporating an improved TFT |
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US6704133B2 (en) | 1998-03-18 | 2004-03-09 | E-Ink Corporation | Electro-optic display overlays and systems for addressing such displays |
US7075502B1 (en) * | 1998-04-10 | 2006-07-11 | E Ink Corporation | Full color reflective display with multichromatic sub-pixels |
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US6157048A (en) * | 1998-08-05 | 2000-12-05 | U.S. Philips Corporation | Thin film transistors with elongated coiled electrodes, and large area devices containing such transistors |
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US6395586B1 (en) * | 1999-02-03 | 2002-05-28 | Industrial Technology Research Institute | Method for fabricating high aperture ratio TFT's and devices formed |
US6313512B1 (en) | 1999-02-25 | 2001-11-06 | Tyco Electronics Logistics Ag | Low source inductance compact FET topology for power amplifiers |
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US6545291B1 (en) | 1999-08-31 | 2003-04-08 | E Ink Corporation | Transistor design for use in the construction of an electronically driven display |
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US4902638A (en) * | 1985-04-23 | 1990-02-20 | Asahi Glass Company, Ltd. | Thin film transistor, method of repairing the thin film transistor and display apparatus having the thin film transistor |
US5062690A (en) * | 1989-06-30 | 1991-11-05 | General Electric Company | Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links |
US5202274A (en) * | 1991-06-14 | 1993-04-13 | Samsung Electronics Co., Ltd. | Method of fabricating thin film transistor |
US5394258A (en) * | 1990-05-15 | 1995-02-28 | France Telecom Etablissement Autonome De Droit Public (Centre National D'etudes Des Telecommunications) | Active matrix display screen with storage capacitors formed of conductive blocks, semiconductive material, nonconductive material, and capacitive lines |
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GB1145991A (en) * | 1965-03-12 | 1969-03-19 | Mullard Ltd | Improvements in and relating to methods of manufacturing electrical circuit arrangements |
DE2408540C2 (en) * | 1974-02-22 | 1982-04-08 | Robert Bosch Gmbh, 7000 Stuttgart | Semiconductor component from a large number of at least approximately identical circuit elements and a method for identifying and separating defective circuit elements |
FR2389955B1 (en) * | 1977-05-05 | 1981-12-04 | Thomson Csf | |
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1995
- 1995-07-31 US US08/497,371 patent/US5737041A/en not_active Expired - Fee Related
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-
1996
- 1996-07-30 AU AU66415/96A patent/AU6641596A/en not_active Abandoned
- 1996-07-30 DE DE69624248T patent/DE69624248T2/en not_active Expired - Fee Related
- 1996-07-30 CN CNB961970693A patent/CN1134069C/en not_active Expired - Fee Related
- 1996-07-30 EP EP96926175A patent/EP0842455B1/en not_active Expired - Lifetime
- 1996-07-30 WO PCT/US1996/012439 patent/WO1997005523A1/en active IP Right Grant
- 1996-07-30 JP JP50784597A patent/JP3273793B2/en not_active Expired - Fee Related
-
1998
- 1998-01-26 US US09/013,798 patent/US5874746A/en not_active Expired - Fee Related
- 1998-11-18 US US09/195,382 patent/US6066506A/en not_active Expired - Fee Related
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Cited By (6)
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---|---|---|---|---|
FR2754917A1 (en) * | 1996-10-18 | 1998-04-24 | Lg Electronics Inc | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME |
FR2775386A1 (en) * | 1998-02-20 | 1999-08-27 | Lg Electronics Inc | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF |
US7759735B2 (en) | 2004-08-20 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element |
US8003420B2 (en) | 2004-08-20 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element |
EP1882978A1 (en) * | 2006-07-25 | 2008-01-30 | Samsung Electronics Co., Ltd. | Liquid crystal display |
EP2479655A3 (en) * | 2011-01-21 | 2016-11-16 | Samsung Display Co., Ltd. | Touch sensing substrate and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
EP0842455B1 (en) | 2002-10-09 |
US6066506A (en) | 2000-05-23 |
CN1196803A (en) | 1998-10-21 |
US5737041A (en) | 1998-04-07 |
JPH11510272A (en) | 1999-09-07 |
AU6641596A (en) | 1997-02-26 |
CN1134069C (en) | 2004-01-07 |
EP0842455A4 (en) | 1998-11-18 |
JP3273793B2 (en) | 2002-04-15 |
EP0842455A1 (en) | 1998-05-20 |
US5874746A (en) | 1999-02-23 |
DE69624248T2 (en) | 2003-08-07 |
TW277147B (en) | 1996-06-01 |
DE69624248D1 (en) | 2002-11-14 |
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