WO1997014179A1 - Semiconductor processing system with gas curtain - Google Patents
Semiconductor processing system with gas curtain Download PDFInfo
- Publication number
- WO1997014179A1 WO1997014179A1 PCT/US1996/016346 US9616346W WO9714179A1 WO 1997014179 A1 WO1997014179 A1 WO 1997014179A1 US 9616346 W US9616346 W US 9616346W WO 9714179 A1 WO9714179 A1 WO 9714179A1
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- WO
- WIPO (PCT)
- Prior art keywords
- gas
- chamber
- wafer
- delivery port
- flow
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
- Y10S438/908—Utilizing cluster apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/941—Loading effect mitigation
Definitions
- This invention relates to processing systems for chemical vapor deposition or other processing of semiconductor wafers and the like. More particularly, the invention relates to an apparatus and method for excluding an unwanted material from a reaction chamber of a processing system.
- High-temperature ovens are used to process semiconductor wafers from which integrated circuits are made for the electronics industry.
- a circular wafer or substrate typically made of silicon, is placed on a wafer support called a susceptor. Both the wafer and susceptor are enclosed in a quartz chamber and heated to 600°C (1112°F) or higher, typically by a plurality of radiant lamps placed around the quartz chamber.
- a reactant gas is passed over the heated wafer, causing the chemical vapor deposition (CVD) of a thin layer of the reactant material on the wafer.
- CVD chemical vapor deposition
- these layers are made into integrated circuits, with a single layer producing from tens to thousands of integrated circuits, depending on the size of the wafer and the complexity of the circuits. If the deposited layer has the same crystallographic structure as the underlying silicon wafer, it is called an epitaxial layer. This is also sometimes called a monocrystalline layer because it has only one crystal structure.
- the wafers are loaded through an input port and then passed through one or more intermediate chambers before entering the reaction chamber.
- One such multiple chamber system is disclosed in U.S. Patent No. 5,156,521, issued to Crabb, et al.
- a magazine of wafers is placed within an input chamber through a door. The door is then closed, and the chamber is purged with nitrogen.
- An elevator lowers the magazine through an aperture in the floor of the input chamber and into registration with an entry port into a handling chamber.
- a robot arm having a pick-up wand on one end then removes wafers from the magazine and transfers them to one of the reaction chambers surrounding the handling chamber.
- Isolation valves are provided between the handling chamber and the various reaction chambers.
- the environment within the handling chamber is thus sealed from that within the reaction chambers.
- the pick-up wand operates on a Bernoulli principal in that gas flows downward from the pick-up wand to lift the individual wafers by creating a reduced pressure on top of the wafers due to the gas velocity over the top surface.
- Figure 1 is a cross-sectional view of a portion of a semiconductor processing system utilizing a gas curtain of the present invention
- Figure 2 is a top plan view of the interior of a handling chamber showing the gas curtain of the present invention adjacent a reaction chamber delivery port;
- Figure 3 is an elevational view of the gas curtain apparatus and isolation valve taken along line 3-3 of Figure 2;
- Figure 4a is a cross-sectional view taken along line 4-4 of Figure 2 of the gas curtain apparatus of the present invention adjacent the isolation valve in an open position;
- Figure 4b is a cross-sectional view of the gas curtain apparatus adjacent a closed isolation valve
- Figure 5 is a cross-sectional view through a wafer loading/unloading chamber and elevator mechanism, taken along line 5-5 of Figure 2;
- Figure 6 is an elevational view of an upper gas manifold of the gas curtain apparatus;
- Figure 7 is a bottom plan view of the upper manifold;
- Figure 8 is a top plan view of the upper gas manifold with a top cover removed, taken along line 8-8 of Figure 6;
- Figure 9 is a partial cross-sectional view through the upper manifold taken along line 9-9 of Figure.6;
- Figure 10 is an enlarged detail of the encircled area of the upper manifold in Figure 9;
- Figure 11 is an elevational view of a lower manifold of the gas curtain apparatus;
- Figure 12 is a side elevational view of the lower manifold;
- Figure 13 is a top plan view of the lower manifold of Figure 11;
- Figure 14 is a top plan view of the lower manifold with a top cover removed taken along line 14-14 of Figure 11;
- Figure 15 is an elevational view of an alternative gas curtain apparatus and isolation valve taken along line
- Figure 16 is a cross-sectional view taken along line 4-4 of Figure 2 of the alternative gas curtain apparatus of Figure 15 adjacent an open isolation valve leading to a reaction chamber delivery port;
- Figure 17 is a table showing the various gas flows through a typical CVD process cycle
- Figure 18, comprising subfigures 18A and 18B, is a schematic diagram of a gas flow valve control system for use in the present invention.
- Figures 1 and 2 illustrate the primary components of a chemical vapor deposition processing system 20 utilizing a gas curtain apparatus of the present invention.
- the processing system 20 generally comprises one or more load locks or input/output chambers 22 ( Figure 2), a handling chamber 24, an isolation valve 26 having a gas curtain apparatus 28 there around, a gas injector 30, and a reaction chamber 32 having an exhaust system 33.
- a longitudinal direction is defined extending from the input/output chambers 22 to the reaction chamber 32, with a lateral direction perpendicular thereto.
- wafers are introduced into the system through the input/output chambers 22 and are delivered via the handling chamber 24 to the reaction chamber 32 using a handler 34 having a pick-up wand 36.
- the isolation valve 26 allows the pick-up wand 36 to extend into the reaction chamber and place a wafer 37 on a susceptor 38 for processing.
- the handler 34 then retracts, and the isolation valve 26 closes before processing of the wafer. Gas flows through the reaction chamber 32 from the injector 30 across the wafer 37 to the exhaust system 33.
- a scrubber (not shown) is typically provided in the exhaust system 33 downstream from the reaction chamber 32 to "scrub" the product gases from the wafer deposition process, the scrubber also generating a vacuum to pull the gases from the reaction chamber.
- Such scrubbers are known in the art.
- the isolation valve 26 opens once again, and the handler 34 retracts the wafer from the reaction chamber 32 and delivers it to one of the input/output chambers 22.
- a typical process takes about 4 minutes from lifting the unprocessed wafer to delivering the processed wafer to the output chamber.
- the handler 34 comprises a pair of articulated robot arms 40a, 40b having proximal ends 42 mounted to be rotated about drive shafts of a drive assembly (not shown).
- Each of the arms 40a,b has an intermediate joint 44, and the pick-up wand 36 is mounted at the distal ends of the arms.
- Drive shafts of the drive assembly are rotated in opposite directions for extending and retracting the robot arms 40a,b.
- the specifics of the robot arm are set forth in U.S. Patent No. 5,080,549, owned by the assignee of the present invention, which is hereby expressly incorporated by reference. Alternatively, other arrangements of robot arms may be utilized.
- the pick-up wand 36 operates on a Bernoulli principal to lift the wafers. That is, gas passages are provided through the hollow articulated robot arms 40a,b leading to apertures directed downward from the pick-up wand 36 in a predetermined pattern. The downward flow of gas above the wafers creates a reduced pressure in that region, thus lifting the wafers.
- one particular type of Bernoulli wand preferably utilized in the present invention includes a plurality of gas outlets below a lower plate, most of the outlets being directed outward toward the wafer periphery, and a central outlet directed perpendicular to the lower surface.
- More of the outwardly directed outlets expel gas in a direction toward a support arm to bias the suspended wafer into contact with positioning pins on the underside of the pick-up wand. While the gas is flowing, therefore, the wafer is held suspended underneath the pick-up wand.
- the articulated arms 40a,b are sufficiently long to extend within the input/output chambers, and also to extend within the reaction chamber, as indicated by the range of motion Iines 46.
- a gas inlet conduit 48 is shown leading into the proximal end of the handler 34 shown in Figure 1.
- Figure 1 illustrates a particularly successful arrangement of components surrounding the reaction chamber 32 to produce highly uniform chemical vapor deposition.
- the susceptor 38 is rotated by arms 50 of a support which is mounted on a shaft 52.
- the shaft 52 extends downward through a tube 53 and is rotated by a motor 54 disposed below the chamber 32.
- the rotational coupling between the motor 54 and shaft 52 is explicitly described in U.S. Patent No. 4,821,674, hereby expressly incorporated by reference.
- the motor 54 is advantageously mounted on a fixed frame and includes adjustment mechanisms for positioning the susceptor 38 within the chamber 32. More particularly, the susceptor 38 may be vertically positioned with respect to the chamber 32 or may be tilted in various desired configurations.
- a plurality of radiant heating lamps are arranged around the reaction chamber 32 to heat the susceptor 38 and wafer thereon.
- a first upper bank of lamps 56 is shown extending laterally with respect to the gas flow through the chamber 32.
- a second lower bank of lamps 58 is shown extending longitudinally with respect to the gas flow through the chamber 32.
- the upper and lower banks of lamps 56, 58 are thus arranged in a crosswise fashion.
- One or more spotlights or directed lamps 60 are positioned underneath the chamber 32 and surrounding the tube 53. The lamps 60 direct radiant energy to the underside of the susceptor 38, which may be shadowed by the shaft 52 and susceptor supporting structure.
- the specific heating arrangement is described and illustrated in U.S. Patent No. 4,836,138, which is hereby expressly incorporated by reference.
- the gas curtain apparatus 28 generally comprises an upper manifold 62 and a lower manifold 64 supplied by gas through a plurality of flexible hoses 66.
- the upper manifold 62 is generally formed in a bridge shape with a pair of outer legs 68 and an upper cross piece 70, the upper cross piece defining a horizontal chamber 72 within.
- Apertures 74 ( Figure 7) in the lower surface of the horizontal cross piece 70 provide a downward gas flow surrounding the isolation valve 26, as indicated at 75 in Figure 4a.
- the lower manifold 64 comprises a pair of support legs 76 and a hollow horizontal cross piece 78.
- a plurality of apertures 80 (Figure 13) formed vertically through a top plate 82 attached to the horizontal cross piece 78 provide an upward gas flow 84 adjacent the isolation valve 26, as seen in Figure 4a.
- the specific structural features of the upper and lower manifolds 62 and 64 will be described below with respect to Figures 6-14. Isolation Valve
- the isolation valve 26 includes a generally rectangular laterally elongate body 86 with parallel opposed planar surfaces 88a, 88b and a laterally elongated slot 90 extending through the body between the opposed planar surfaces.
- the elongated slot 90 has a lateral width longer than a horizontal delivery port 92 formed in the gas injector 30 and leading from the handling chamber 24 to the reaction chamber 32.
- the approximate outline of the Bernoulli wand 36 is illustrated in Figure 3.
- the isolation valve body 86 further includes an angled sealing surface 94 having a generally oval-shaped O-ring 96 secured in a groove and projecting slightly therefrom.
- the O-ring 96 provides a gas-tight seal against a wall 98 of the gas injector 30 facing into the handling chamber 24.
- the isolation valve body 86 pivots about an axis 100 fixed with respect to the handling chamber 24.
- the body 86 In an open position, as seen in Figure 4a, the body 86 is vertical so that the slot 90 extends horizontally.
- One of the robot arms 40a is seen extended horizontally through the slot 90 in this position of the valve body 86.
- the body 86 pivots about the axis 100 in the clockwise direction as viewed in Figure 4a to the position shown in Figure 4b.
- the angled sealing surface 94 is thus juxtaposed against the vertical wall 98, and the O-ring 96 surrounds the horizontal delivery port 92 to close the handling chamber 24 from the reaction chamber 32.
- the handling chamber 24 includes an opening 102 in a bottom surface adjacent the delivery port 92 in which the isolation valve 26 is mounted.
- the isolation valve 26 includes a mounting plate 104 which is bolted or otherwise attached to the bottom wall 106 of the handling chamber to hermetically seal the opening 102 and support the various components of the isolation valve.
- a pneumatic actuator 108 mounts below the handling chamber 24, and an extensible rod 110 of the actuator 108 extends upwardly therefrom through an opening formed in the mounting plate 104.
- a bellows seal (not shown) or other such expedient concentrically disposed about the rod 110 hermetically seals the opening 102 through which the rod extends.
- the bellows seal typically has a lower mounting flange sealingly attached to the upper surface of the mounting plate 104 about the opening 102, and an upper portion of the seal is attached to the upper end of the actuator rod 110 which is connected to one end of a lever arm 112 at a pivot pin 114.
- the opposite end of the lever arm 112 is rigidly connected to the valve body 86, so that up and down movement of the rod 110 causes the valve body to rotate by virtue of the lever arm coupling.
- Figure 4a shows the isolation valve 26 in an open position with the extension rod 110 retracted
- Figure 4b illustrates the isolation valve closed over the port 92 through the gas injector 30 with the rod extended.
- Figure 4a illustrates the downwardly directed gas flow 75 from the upper manifold 62 passing between the isolation valve 26 and the gas injector port 92.
- Figure 4b illustrates the downward gas flow 75 from the upper manifold 70 extending through the elongated slot 90 of the isolation valve body 86 when the isolation valve 26 is in a closed position.
- the lower manifold 64 is rigidly attached to a bracket 116 ( Figure 3) connected to the upper end of the bellows assembly. The lower manifold thus moves up and down with the extension rod 110. In the isolation valve 26 open position, the upward gas flow from the lower manifold 64 provides a gas curtain 84 below the pivot axis 100 of the isolation valve.
- the upward gas flow from the lower manifold 64 provides a gas curtain 84' which is initiated at approximately at the same height as the pivot axis 100 of the isolation valve.
- the lower manifold 64 directs gas upwardly in a flow 84 or 84' on the opposite side of the isolation valve 26 from the downward flow 75.
- the cross flow of the two gas curtains 75, 84 (84') substantially intercepts any fugitive or unwanted gas existing in the handling chamber 24 before passing through the gas injector port 92, which gas is then exhausted toward the input/output chambers, as described below.
- each input/output chamber 22 comprises an upper chamber 122 for introduction of wafer magazines 124, and a lower chamber 126 having an elevator platform 128 reciprocable therein.
- Each input/output chamber 22 includes one or more exhaust apertures 118 formed through a lower wall 120 in connection with a pressure balanced exhaust system.
- a continuously open feed port 132 communicates between the lower chamber 126 and handling chamber 24.
- the gases generated by the gas curtains 75, 84 are continually vented away from the gas injector port 92 through the feed port 132 and out of the chamber 126 through the exhaust apertures 118.
- FIGS. 6-10 illustrate the upper manifold 62 in detail which, as mentioned above, comprises the two side legs 68 and the horizontal cross piece 70.
- the horizontal cross piece 70 has an inner chamber 72 formed therein covered by a plate 134.
- the plate 134 is suitably fastened to the horizontal cross piece 70 using fasteners, for example.
- the chamber 72 extends substantially along the lateral length of the horizontal cross piece 70 and includes a plurality of angled apertures 74 extending downward through a lower wall thereof. The particular angle of the apertures 74 is shown in the detailed view of Figure 10.
- Lateral bores 136 formed in either lateral side of the cross piece 70 when machining the chamber 72 are desirably plugged.
- a mounting bracket 146 is provided on each of the upper manifold legs 68 to rigidly fix the upper manifold 62 with respect to the chamber 24.
- a fitting 140 mounts within the bore 138 and receives a flexible gas delivery hose 142.
- the hose 142 enters the handling chamber 24 through a sealed mount 144 and extends upward to one side of the gas curtain 28 and isolation valve apparatus 26.
- Gas enters the chamber 72 at the end of the bore 138 and is distributed the length of the cross piece 70 to be evenly dispersed through the apertures 74.
- the angle of the apertures 74 creates the angled downward gas flow 75 shown in Figures 4a and 4b.
- Figures 11-14 illustrate the components of the lower manifold 64 which, as mentioned before, comprises the two support legs 76 and the irregular shaped horizontal cross piece 78.
- the cross piece 78 includes a central portion 148 and a pair of outward portions 150, the outward portions being horizontally stepped in the longitudinal direction toward the reaction chamber 32 with respect to the central portion.
- an inner chamber 152 extends substantially the length of the stepped cross piece 78.
- An apertured plate 156 is provided over the chamber 154 suitably fastened thereto using fasteners, for example.
- a plurality of small apertures 158 are provided in the cover which allow gas to escape from the chamber 152 directly upward. This gas flow 84 is shown best in Figures 4a and 4b.
- the lower manifold 64 includes a mounting bracket 160 extending horizontally from each of the support legs 76 which attaches to the aforementioned isolation valve actuating mechanism.
- a bore 162 formed from an underside of the cross piece 78 communicates with the chamber 152.
- a fitting 164 mounts within the bore 162 and receives a flexible gas delivery hose 166.
- the hose 166 enters the handling chamber 24 through a sealed mount 168 and extends upward to the underside of the cross piece 78 one on an opposite side of the isolation valve apparatus 26 from the flexible hose 142.
- Gas enters the chamber 152 at the bore 162 and is distributed the length of the cross piece 78 to be evenly dispersed through the apertures 158.
- the apertures 158 create the upward gas flow 84 shown in Figures 4a and 4b.
- Alternative Gas Curtain Apparatus Figures 15 and 16 illustrate a further embodiment 180 of a gas curtain apparatus 28 which can be substituted for the gas manifolds 62, 64 described above.
- a plurality of rigid pipes delivers the gas from a source exterior to the handling chamber 24 to the region surrounding the isolation valve 26.
- an upper cross-pipe 182 includes a plurality of lower apertures 184 which deliver a downward curtain-like flow 188
- a lower cross-pipe 184 includes a plurality of upper apertures 190 which deliver an upward curtain- like flow 192.
- the piping system 180 is preferably made of stainless steel, but may also be made from other compatible materials.
- the flows 188 and 192 are analogous to the flows 75 and 84 in the first embodiment. Specifically, the downward flow 88 is directed between the isolation valve 26 and the gas injector port 92 when the valve is open, and is directed through the elongated slot 90 of the isolation valve body 86 when the valve is in a closed position. In a divergence from the previous embodiment, the lower gas curtain flow is directed upward from a fixed location, rather than being coupled with the reciprocating extension rod 110.
- the piping system 180 includes two parallel lower input conduits 194 entering the handling chamber 24 at sealed fittings 196. Each input conduit 194 diverges laterally at T-junctions 196 into an inwardly directed conduit 196 and an outwardly directed conduit 198.
- the conduits 198 connect with 90° joints 200 leading to vertical sections 204 attached to second 90° joints 208. As seen in Figure 16, the joints 200 provide transitions to horizontal sections 210 leading to fittings 212. The fittings 212 support the upper cross-pipe 182 and provide gas inlets from the horizontal section 210 into the interior of the pipe. The conduits 196 connect with joints 202 leading to vertical sections 206 attached to fittings 214. The fittings 214 support the lower cross-pipe 184 and provide gas inlets from the vertical section 206 into the interior of the pipe. Valve Svstem A valve system for the gas curtain apparatus 28, pick-up wand 36 and load locks 22 (as numbered in
- Figures 1-2 is schematically depicted in Figure 18, which comprises subfigures 18A and 18B on separate pages.
- the dotted box 230 encompasses a series of flow control valves whose operational status determines the type and level of gas flowing through the gas curtain apparatus 28 and pick-up wand 36, and the level of gas flowing to the purge system of the load locks 22.
- the box 230 may be generally termed a purge panel, as symbols representing each valve and its operational status may be visually displayed on a control panel. Alternatively, selected valves in the purge panel 230 may be computer-controlled and the operational status displayed visually and/or obtained interactively on a monitor.
- a source of nitrogen (N 2 ) and a source of hydrogen (H 2 ) are shown outside the purge panel 230.
- the gasses are each supplied at 80 psig, although other pressures may be suitable.
- the N 2 from the source passes along a conduit 232 through an entry valve 234A and filter 236A before connecting with three parallel flow legs 238A, 238B and 238C.
- the H 2 from the source passes along a conduit through an entry valve 234B and filter 236B before connecting with the first flow leg 238A (and eventually to second flow leg 238B, as will be seen).
- An output conduit 240A from first flow leg 238A leads to upper and lower gas curtains 241 A, 241 B, seen in Figure 18B.
- An output conduit 240B from second flow leg 238B leads to the Bernoulli wand 242.
- An output conduit 240C from third flow leg 238C leads to both load locks 243A, 243B.
- a bypass leg 238D extends between two points in the third flow leg 238C on either side of a load lock pressure regulator 250.
- a pneumatically-actuated load lock high flow control valve 248 and a flow restrictor 249 are positioned in the bypass leg 238D.
- N 2 passes through the pressure regulator 250 which limits the pressure of N 2 in output conduit 240C to 15 psig. This pressure enables the flow restrictors adjacent the load locks 243 in Figure 18B to meter the N 2 flow to 15 slm.
- the load lock high flow control valve 248 is opened, N 2 at 80 psig in leg 238D is allowed to bypass the pressure regulator 250.
- the flow restrictor 249 reduces the flow (pressure) of the N 2 to a level which, in conjunction with the flow restrictors shown adjacent the load locks 243 in Figure 1BB, meters the flow to approximately 25 slm to each load lock 243.
- the high flow control valve 248 is actuated by signals sent from a controller 251.
- H j "burp" valves 245, 246 ( Figure 18B) for each load lock 243 are provided to periodically sample the atmosphere within the load locks for excess H 2 concentration.
- the "burp" valves 245, 246 expose an H 2 detector to the sample of gas to determine the H 2 concentration.
- Each load lock 243A, 243B additionally has an exhaust vent valve 258A, 258B associated therewith.
- Pneumatically-actuated valves 261 A and 261B are located in the second flow leg 238B and are controlled by a single electrically-actuated pneumatic switch 265 via a common gas line 265A.
- Pneumatically-actuated valves 262A, 262B, and 262C are located in the first flow leg 238A and are likewise controlled by a single electrically- actuated pneumatic switch 264 via a common gas line 264A. Each of the switches is supplied with a pneumatic gas from a source (not shown).
- the schematic representation of each of the pneumatically-actuated valves includes two halves, a primary half, as seen connected to the flow legs in Figure 18A, represents the normal or unactuated condition, whereas a secondary half represents the actuated condition.
- left valve 262A shows an open flow line in the bottom or primary half, and a closed flow line in the top or secondary half.
- valve 262A When pneumatic pressure is applied via common line 264A, the valve 262A closes.
- the pneumatic gas used may be N 2 or clean, dry air.
- the mechanical details of the valves 261, 262 and switches 264, 265 are well known by those of skill in the art and will not be described in great detail. Valves suitable for use in the present system may be obtained from Qualiflow, based in France. Furthermore, other details such as the electrical connections are not shown.
- left valve 262A functions as an ONIOFF for the N 2 flow.
- the middle valve 262B has a N 2 input from the left valve 262A, an H 2 input from the filter 236B, an output leading to right valve 262C, and also an output to a valve 26 IB located in the second flow leg 238B.
- the right valve 262C has two selectable output Iines 263A, 263B which include orifice-type flow restrictors whose outputs combine in line 240A. One flow restrictor is calibrated to pass 5 slm of N 2 while the other is calibrated to pass 15 slm of N 2 .
- the 5 slm flow restrictor is selected for H 2 flow, while both the 5 and 15 slm flow restrictors are selected for N 2 flow, the end result being a flow of 20 slm of either gas (because of the different gas viscosities, and because the restrictors are calibrated based on N 2 flow, the orifices are differently sized to produce equal flow).
- the flow rate depends on the input pressure, which is regulated to 30 psig in this embodiment.
- left valve 261 A functions as an ON/OFF for the N 2 flow.
- the middle valve 261 B has a N 2 input from the left valve 261 A, an H 2 input from the valve 262B, and an output leading to a Bernoulli wand ON/OFF valve 247A and the output conduit 240B.
- all three valves 262A, 262B, and 262C which determine the type of gas flow to the gas curtains 241 A,B are controlled by the common switch 264. On a signal from the controUer 251, the switch 264 either permits or prevents pneumatic gas to flow into the common line 264A.
- Pressurization of the line 264A actuates each of the valves 262A, 262B, and 262C which are normally in the positions shown in Figure 18A.
- the two valves 261 A and 26 IB which determine the type of gas flow to the Bernoulli wand 242 are controlled by the common switch 265.
- the switch 265 On a signal from the controller 251, the switch 265 either permits or prevents pneumatic gas to flow into the common line 265A.
- Pressurization of the line 265A actuates both valves 261 A and 261B which are normally in the positions shown in Figure 18A.
- the significance of the dual common valve controls will be more fully explained below in the description of the operation of the system.
- Indicators 266 are provided to sense pressurization of the Iines 264A and 265A, and thus H 2 flow to the chambers. Such indicators may take many forms, a simple pop-up type piston shown having a red indicator end visible by an operator of the system when H 2 flows.
- the wand ON/OFF valve 247A shuts off the positive flow of gas through conduit 240B. Because of the small sized orifices in the lower surface of the wand 242, the pressure within the conduit 240B would only gradually decrease without the provision of a dump valve 247B. After the flow to the wand 242 is shut off, the dump valve 247B opens to rapidly release the pressure within the conduit 240B, thus releasing the wafer from under the wand. This configuration is needed as a very low flow of gas from under the wand 242 is needed to maintain lift, and the residual flow from simply shutting off the positive supply of gas would delay release of the wafer.
- a flow of about 30-40 slm is required to initially pick up a wafer, but a residual flow of only 2-3 slm will maintain lift for a wafer.
- the dump valve 247B is needed to quickly drop a wafer. Operation
- the valve system operates in three modes. In a first mode, N 2 flows through both the gas curtains 241 A, 241 B and Bernoulli wand 242. In a second mode, H 2 flows through both the gas curtains 241 A, 241 B and Bernoulli wand 242. In a third mode N 2 flows through the gas curtains 241 A, 241 B, and H 2 flows through the Bernoulli wand 242. When N 2 gas is desired for both the gas curtains 241 A, 241 B and Bernoulli wand 242, both switches 264 and 265 are closed to prevent pneumatic gas from flowing into respective Iines 264A and 265A.
- valves 262A and 262B to flow N 2 to right valve 262C, which channels the N 2 through both output Iines 263A and 263B to gas curtains 241A, 241 B.
- valves 261A and 261B are configured so that N 2 flows through to output line 240B, and from there to Bernoulli wand 242.
- H 2 flows through valve 262B to middle valve 261 B in second flow leg 238B, the H 2 flow stops there, as indicated schematically by the discontinuous flow path in the bottom half of the valve 261 B.
- H 2 flow is desired through both the gas curtains 241 A, 241 B and Bernoulli wand 242
- signals are provided by controller 251 to switches 264 and 265 to alter the flows through the first and second flow legs 238A, 238B.
- the switches 264 and 265 then open to permit pneumatic gas to flow into respective Iines 264A and 265A.
- Valve 262A closes to prevent N 2 from continuing through first leg 238A, and middle valve 262B switches to flow H 2 to right valve 262C.
- Right valve 262C channels the H 2 flow through output line 263B (calibrated for H2 flow). H 2 continues to flow through valve 262B to middle valve 261 B in second flow leg 238B.
- Valve 261 A closes to prevent N 2 from continuing through second leg 238B, and middle valve 261 B opens to flow H 2 through valve 247A (if open) and conduit 240B to Bernoulli wand 242.
- N- flows to the gas curtains 241A.B only, and H 2 flows to the Bernoulli wand 242.
- the second valve 262B in flow leg 238A is in the position illustrated, with N 2 flowing therethrough to third valve 262C, and with H 2 flowing to second valve 261 B in second flow leg 238B.
- Switch 265 opens on a signal from controller 251 to permit pneumatic gas to flow into line 265A.
- left valve 261 A closes to prevent N 2 from continuing through second leg 238B, and middle valve 261B is actuated opposite the position shown, to flow H 2 to Bernoulli wand ON/OFF valve 247A. As long as valve 247A is open, H 2 then flows to wand 242.
- the present system provides a "fail safe" design to prevent excessive levels of H 2 from building up in the chambers.
- the valve system When the power fails, or when the supply of pneumatic gas to switches 264 and 265 is interrupted, the valve system will default to flowing N 2 . That is, the valves 261 and 262, which control the presence of H 2 in the chambers, are configured to flow N 2 in their normal or unactuated states.
- the valves include spring-loaded pistons which are biased into this normal, safe position, and only flow H 2 when pneumatic pressure is applied.
- the pistons upon a power failure or interruption of gas supply, the pistons are biased into positions permitting N 2 to flow, and preventing H 2 flow.
- the valves could conceivably be actuated independently with each being configured to default to N 2 flow in the event of a system failure, but the common connections simplify the control logic, and reduces the necessary electronic and pneumatic components.
- the gas curtains operate continuously during wafer processing.
- the processing can be segmented into discrete time intervals.
- the reaction chamber 32 is first brought to a pre ⁇ heated temperature.
- the isolation valve 26 remains closed.
- a gas is supplied to the gas curtain apparatus 28 as well as to the Bernoulli wand 36.
- the wand 36 picks up a wafer 37 from the magazine 124 through the feed port 132.
- the isolation valve 26 opens and the wand 36 extends through the slot 90 and delivery port 92 to deposit the wafer 37 in the reaction chamber 32.
- the wand 36 withdraws and the valve 26 closes enabling processing of the wafer 37.
- the valve 26 opens, and the wand 36 extends to remove the wafer 37 from the reaction chamber 32 and replace it in a magazine 124, or in another chamber for further processing.
- gas continuously flows through the gas curtain apparatus
- the particular type of gas utilized in both the gas curtain 28 and the Bernoulli wand 36 may vary. It has been discovered, however, that hydrogen (H 2 ) is desirable because of its ability to sweep water molecules from the handling chamber into the loadlock chamber. Hydrogen gas appears to be slightly better at attracting water than nitrogen gas. This is believed to be because of two phenomena. First, when measured at standard temperature and pressure, hydrogen gas is slightly more soluble in water than is nitrogen gas (the molar fraction solubilities of hydrogen and nitrogen gases in water are 1.411x10 s and 1.183x10 s , respectively). Because hydrogen has a higher solubility in water, one would predict that the attraction between hydrogen gas and water is greater than that between nitrogen gas and water.
- nitrogen gas has orbitals containing pairs of non- bonding electrons located 180° from the bond axis on each side of the molecule. Because the nitrogen gas molecule is literally surrounded with electrons, it is not as inviting of an "electron dump" as is the hydrogen gas molecule. Nitrogen gas has empty molecular orbitals, but they are not as accessible to the water molecule as are the orbitals of the hydrogen molecule. Because of the permanent dipole observed for water molecules, however, nitrogen may enjoy a slight advantage when accounting for a dipole-induced dipole interaction. This would help explain why the strengths of attraction of nitrogen gas and hydrogen gas with water are not as great as what might be estimated based strictly upon the solubility or molecular orbital explanation.
- the hydrogen gas molecule has only two electrons, both tightly held and involved in bonding, it is not very polarizable and not a good candidate for an induced dipole.
- the nitrogen gas molecule has some loosely held electrons and it is fairly polarizable, making it a good candidate for an induced dipole. Thus, one would predict that water and nitrogen gas would have some dipole- induced dipole interactions.
- the events during a typical processing sequence are indicated along the top row of Figure 17. These events include the pick up of the wafer by the Bernoulli wand from the magazine in the loadlock, transporting the wafer from the loadlock across the handling chamber to a gate valve at the entrance to a reaction chamber, opening the gate valve, loading the wafer into the reaction chamber and onto the susceptor for processing, retracting the Bernoulli wand and closing the gate valve, processing the wafer within the reactor, reopening the gate valve and removing the wafer from the reaction chamber, closing the gate valve, and preparing the reaction chamber for subsequent processes.
- a number of conditioning steps may be taken during the preparation of the reaction chamber for the next wafer, such as etching the chamber and sometimes injecting a small amount of silicon-based gas into the etched chamber to deposit a thin layer of silicon on the etched surfaces of the susceptor.
- the time for preparing the chamber varies from between 30 seconds to two minutes.
- the wafer is picked up using nitrogen flowing through the Bernoulli wand, and with nitrogen also flowing through the gas curtain to be exhausted from a point closest to the loadlock chamber.
- both the Bernoulli wand and the gas curtain are switched from flowing nitrogen to flowing hydrogen.
- the time at which the gas flows switch is determined to allow a sufficient delay after switching to hydrogen before the reaction chamber gate valve opens to avoid any nitrogen in the reaction chamber. This also helps sweep out more moisture from the gate valve region which may have migrated from the load lock in the nitrogen atmosphere.
- the Bernoulli wand and gas curtain are switched from nitrogen to hydrogen approximately eight seconds before the gate valve to the reaction chamber opens.
- the Bernoulli wand is switched to hydrogen prior to picking up the wafer from the magazine. Hydrogen flows through the Bernoulli wand and through the gas curtain until the wafer is loaded, after which the wand retracts from the reaction chamber and the gate valve closes. At this point, the wand and gas curtain switch back to nitrogen which continues to flow while the wafer is unloaded and the chamber is prepared for a subsequent wafer.
- the third sequence of Figure 17 shows the Bernoulli wand and gas curtain flowing nitrogen at the time of wafer pick-up, and being switched to hydrogen approximately eight seconds before the gate valve to the reaction chamber opens (similar to sequence one). Hydrogen continues to flow through both the Bernoulli wand (when operated) and the gas curtain during the time the wafer is processed and unloaded, and the gas flows are converted to nitrogen only after the gate valve closes prior to preparation of the reaction chamber for a subsequent wafer. Sequence four in Figure 17 shows the Bernoulli wand gas curtain flowing hydrogen prior to picking up the wafer. Hydrogen continues to flow until the gate valve has closed after unloading the wafer that has been processed and prior to preparing the reaction chamber for a subsequent wafer.
- the fifth sequence of Figure 17 illustrates hydrogen flowing through a majority of the events except for during processing of the wafer. That is, the Bernoulli wand and gas curtain switch from hydrogen to nitrogen after the gate valve is closed and during the time the wafer is being processed, and switched back to hydrogen prior to the gate valve opening and the wafer being unloaded.
- both the Bernoulli wand and the gas curtain flow hydrogen throughout the entire cycle.
- Another advantage of the present gas curtain invention is the improved cooling efficiency of the system.
- the Bernoulli wand is instructed to halt to allow the crossing flows to contact the wafer.
- the wafers wait for a period of between 30 seconds and one minute just outside the reaction chamber to allow the gas curtains to provide some cooling thereto. This short interval of cooling allows the Bernoulli wand to continue on and place the wafer within a magazine, the wafer having being cooled down to a temperature sufficiently low so as not to damage the wafer or wafer magazine.
- the gas flow through the Bernoulli wand may be switched while the wafer is being held. Because of this, the two different gas flows must be carefully calibrated to provide the same lift force to the wafer. While the Bernoulli wand is calibrated using a nitrogen flow, hydrogen, being a less dense gas, must flow at a greater volumetric flow rate for the same lift.
- the Bernoulli wand pressure/flows are seen in the chart of Table 1 below. Fine adjustments for optimum performance are done with hydrogen flowing in the Bernoulli wand. That is, the Bernoulli wand is first calibrated with nitrogen flowing, and then switched to a hydrogen flow for a final adjustment.
- the pressure in the wafer handing chamber should normally run at about 1 to 18 inches of water above the ambient pressure with the reaction chamber isolation valve closed. During the time that the isolation valve is open, the pressure balance between the wafer handling chamber and reaction chamber should be about 1 to 5 inches of water. That is, the pressure in the handling chamber is slightly greater than the pressure in the reaction chamber. A precise pressure balance is maintained between the handling chamber and the reaction chamber to help ensure that no reactor exhaust gas is drawn into the reactor and into the handling chamber, and also to minimize the amount of curtain flow entering the reactor.
- the pressure regulators control the pressure within the loadlock and handling chambers and prevent any over-pressure which might cause gasses to flow into the reaction chamber.
- the pressure within the reaction chamber is generally known based on the type of scrubber which is positioned in the exhaust conduit. Some scrubbers produce a vacuum, and thus a throttle valve in the reaction chamber exhaust line may be necessary to ensure the precise balancing between the handling chamber and the reaction chamber.
Abstract
Description
Claims
Priority Applications (1)
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AU74415/96A AU7441596A (en) | 1995-10-13 | 1996-10-14 | Semiconductor processing system with gas curtain |
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US541395P | 1995-10-13 | 1995-10-13 | |
US60/005,413 | 1995-10-13 | ||
US08/729,550 | 1996-10-11 | ||
US08/729,550 US5997588A (en) | 1995-10-13 | 1996-10-11 | Semiconductor processing system with gas curtain |
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WO1997014179A1 true WO1997014179A1 (en) | 1997-04-17 |
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PCT/US1996/016346 WO1997014179A1 (en) | 1995-10-13 | 1996-10-14 | Semiconductor processing system with gas curtain |
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US (1) | US5997588A (en) |
AU (1) | AU7441596A (en) |
WO (1) | WO1997014179A1 (en) |
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