WO1997048032A8 - Programmable metallization cell and method of making - Google Patents

Programmable metallization cell and method of making

Info

Publication number
WO1997048032A8
WO1997048032A8 PCT/US1997/009367 US9709367W WO9748032A8 WO 1997048032 A8 WO1997048032 A8 WO 1997048032A8 US 9709367 W US9709367 W US 9709367W WO 9748032 A8 WO9748032 A8 WO 9748032A8
Authority
WO
WIPO (PCT)
Prior art keywords
anode
cathode
dendrite
voltage
ion conductor
Prior art date
Application number
PCT/US1997/009367
Other languages
French (fr)
Other versions
WO1997048032A2 (en
WO1997048032A3 (en
Inventor
Michael N Kozicki
William C West
Original Assignee
Axon Technologies Corp
Univ Arizona State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axon Technologies Corp, Univ Arizona State filed Critical Axon Technologies Corp
Priority to JP10501650A priority Critical patent/JP2000512058A/en
Priority to CA002261639A priority patent/CA2261639C/en
Priority to KR1019980709655A priority patent/KR100349927B1/en
Priority to EP97928748A priority patent/EP0939957B1/en
Priority to DE69734007T priority patent/DE69734007T2/en
Priority to AU32926/97A priority patent/AU716236B2/en
Priority to AT97928748T priority patent/ATE302463T1/en
Publication of WO1997048032A2 publication Critical patent/WO1997048032A2/en
Publication of WO1997048032A3 publication Critical patent/WO1997048032A3/en
Priority to HK00101445A priority patent/HK1023844A1/en
Publication of WO1997048032A8 publication Critical patent/WO1997048032A8/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • G11C13/0011RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1514Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
    • G02F1/1523Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
    • G02F1/1525Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material characterised by a particular ion transporting layer, e.g. electrolyte
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/0069Writing or programming circuits or methods
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/24Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/253Multistable switching devices, e.g. memristors having three or more terminals, e.g. transistor-like devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/257Multistable switching devices, e.g. memristors based on radiation or particle beam assisted switching, e.g. optically controlled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/823Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822Sulfides, e.g. CuS
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153Constructional details
    • G02F1/155Electrodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/0069Writing or programming circuits or methods
    • G11C2013/009Write using potential difference applied between cell electrodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50Resistive cell structure aspects
    • G11C2213/51Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

Abstract

A programmable metallization cell (10) ('PMC') comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (13 and 14) (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor (12) and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC. The PMC may be incorporated into a variety of technologies such as memory devices, programmable resistor/capacitor devices, optical devices, sensors, and the like. Electrodes additional to the cathode and anode can be provided to serve as outputs or additional outputs of the devices in sensing electrical characteristics which are dependent upon the extent of the dendrite.

Description

FOR THE PURPOSES OF INFORMATION ONLY
Codes used to identify States party to the PCT on the front pages of pamphlets publishing international applications under the PCT.
AL Albania ES Spain LS Lesotho SI Slovenia
AM Armenia FI Finland LT Lithuania SK Slovakia
AT Austria FR France LU Luxembourg SN Senegal
AU Australia GA Gabon LV Latvia SZ Swaziland
AZ Azerbaijan GB United Kingdom MC Monaco TD Chad
BA Bosnia and Herzegovina GE Georgia MD Republic of Moldova TG Togo
BB Barbados GH Ghana MG Madagascar TJ Tajikistan
BE Belgium GN Guinea MK The former Yugoslav TM Turkmenistan
BF Burkina Faso GR Greece Republic of Macedonia TR Turkey
BG Bulgaria HU Hungary ML Mali TT Trinidad and Tobago
BJ Benin IE Ireland MN Mongolia UA Ukraine
BR Brazil IL Israel MR Mauritania UG Uganda
BY Belarus IS Iceland MW Malawi S United States of America
CA Canada IT Italy MX Mexico Z Uzbekistan
CF Central African Republic JP Japan NE Niger VN Viet Nam
CG Congo KE Kenya NL Netherlands YU Yugoslavia
CH Switzerland KG Kyrgyzstan NO Norway ZW Zimbabwe
CI Cβte d'lvoire KP Democratic People's NZ New Zealand
CM Cameroon Republic of Korea PL Poland
CN China KR Republic of Korea PT Portugal
CU Cuba KZ Kazakstan RO Romania
CZ Czech Republic LC Saint Lucia RU Russian Federation
DE Germany LI Liechtenstein SD Sudan
DK Denmark LK Sri Lanka SE Sweden
EE Estonia LR Liberia SG Singapore
PCT/US1997/009367 1996-05-30 1997-05-28 Programmable metallization cell and method of making WO1997048032A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP10501650A JP2000512058A (en) 1996-05-30 1997-05-28 Programmable metallization cell structure and fabrication method thereof
CA002261639A CA2261639C (en) 1996-05-30 1997-05-28 Programmable metallization cell structure and method of making same
KR1019980709655A KR100349927B1 (en) 1996-05-30 1997-05-28 Programmable metallized cell structure and method of manufacturing same
EP97928748A EP0939957B1 (en) 1996-05-30 1997-05-28 Programmable metallization cell structure and method of making same
DE69734007T DE69734007T2 (en) 1996-05-30 1997-05-28 STRUCTURE FOR PROGRAMMABLE METALLIZING CELL AND METHOD OF MANUFACTURING THEREOF
AU32926/97A AU716236B2 (en) 1996-05-30 1997-05-28 Programmable metallization cell structure and method of making same
AT97928748T ATE302463T1 (en) 1996-05-30 1997-05-28 STRUCTURE FOR PROGRAMMABLE METALLIZING CELL AND PRODUCTION METHOD THEREOF
HK00101445A HK1023844A1 (en) 1996-05-30 2000-03-08 Programmable metallization cell structure and method of making same.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/652,706 1996-05-30
US08/652,706 US5761115A (en) 1996-05-30 1996-05-30 Programmable metallization cell structure and method of making same

Publications (3)

Publication Number Publication Date
WO1997048032A2 WO1997048032A2 (en) 1997-12-18
WO1997048032A3 WO1997048032A3 (en) 1998-02-05
WO1997048032A8 true WO1997048032A8 (en) 2000-08-10

Family

ID=24617839

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/009367 WO1997048032A2 (en) 1996-05-30 1997-05-28 Programmable metallization cell and method of making

Country Status (12)

Country Link
US (4) US5761115A (en)
EP (1) EP0939957B1 (en)
JP (2) JP2000512058A (en)
KR (1) KR100349927B1 (en)
CN (1) CN1144231C (en)
AT (1) ATE302463T1 (en)
AU (1) AU716236B2 (en)
CA (1) CA2261639C (en)
DE (1) DE69734007T2 (en)
HK (1) HK1023844A1 (en)
TW (1) TW356549B (en)
WO (1) WO1997048032A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
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US8895401B2 (en) 2004-08-12 2014-11-25 Micron Technology, Inc. Method of forming a memory device incorporating a resistance variable chalcogenide element

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