WO1998005807A8 - CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR - Google Patents

CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR

Info

Publication number
WO1998005807A8
WO1998005807A8 PCT/US1997/013527 US9713527W WO9805807A8 WO 1998005807 A8 WO1998005807 A8 WO 1998005807A8 US 9713527 W US9713527 W US 9713527W WO 9805807 A8 WO9805807 A8 WO 9805807A8
Authority
WO
WIPO (PCT)
Prior art keywords
perovskite
film
material surface
semiconductor
catio3
Prior art date
Application number
PCT/US1997/013527
Other languages
French (fr)
Other versions
WO1998005807A1 (en
Inventor
Rodney Allen Mckee
Frederick Joseph Walker
Original Assignee
Lockheed Martin Energy Res Cor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Martin Energy Res Cor filed Critical Lockheed Martin Energy Res Cor
Priority to AU39034/97A priority Critical patent/AU3903497A/en
Priority to JP10508069A priority patent/JP2000517280A/en
Priority to CA002261769A priority patent/CA2261769C/en
Priority to EP97936337A priority patent/EP0950132A4/en
Publication of WO1998005807A1 publication Critical patent/WO1998005807A1/en
Publication of WO1998005807A8 publication Critical patent/WO1998005807A8/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers

Abstract

A structure including a film of a desired perovskite which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The orientation of the underlying material surface and thereby effects a transition in the lattice structure from the fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film (74) is built up upon a semiconductor based material (72) and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component. This process can be used to form FFET (70), with semiconducting substrate (72), a source (78), drain (84), and a gate dielectric (83). The perovskite (74) is part of the gate electrode.

Description

(15) Information about Correction: For two-letter codes and other abbreviations, refer to the "Guid- see PCT Gazette No. 25/2001 of 21 June 2001, Section π ance Notes on Codes and Abbreviations" appearing at the beginning of each regular issue of the PCT Gazette
PCT/US1997/013527 1996-08-05 1997-07-31 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR WO1998005807A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU39034/97A AU3903497A (en) 1996-08-05 1997-07-31 Catio3 interfacial template structure on superconductor
JP10508069A JP2000517280A (en) 1996-08-05 1997-07-31 CaTiO on superconductor Lower 3 interface template structure
CA002261769A CA2261769C (en) 1996-08-05 1997-07-31 Catio3 interfacial template structure on superconductor
EP97936337A EP0950132A4 (en) 1996-08-05 1997-07-31 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/692,343 1996-08-05
US08/692,343 US5830270A (en) 1996-08-05 1996-08-05 CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

Publications (2)

Publication Number Publication Date
WO1998005807A1 WO1998005807A1 (en) 1998-02-12
WO1998005807A8 true WO1998005807A8 (en) 2001-06-21

Family

ID=24780189

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/013527 WO1998005807A1 (en) 1996-08-05 1997-07-31 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR

Country Status (7)

Country Link
US (1) US5830270A (en)
EP (1) EP0950132A4 (en)
JP (1) JP2000517280A (en)
KR (1) KR100493881B1 (en)
AU (1) AU3903497A (en)
CA (1) CA2261769C (en)
WO (1) WO1998005807A1 (en)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993541A (en) * 1996-07-31 1999-11-30 Geo Centers Inc Process for nucleation of ceramics and product thereof
US6080235A (en) * 1997-06-03 2000-06-27 Ut-Battelle, Llc Geometric shape control of thin film ferroelectrics and resulting structures
US6093242A (en) * 1996-08-05 2000-07-25 Ut-Battelle, Llc Anisotropy-based crystalline oxide-on-semiconductor material
FR2753567B1 (en) * 1996-09-19 1998-11-13 Alsthom Cge Alcatel METHOD FOR DEPOSITING A FERROMAGNETIC FILM ON A WAVEGUIDE, AND A MAGNETO-OPTICAL COMPONENT COMPRISING A THIN FERROMAGNETIC FILM DEPOSITED ACCORDING TO THE METHOD
US6069368A (en) * 1997-12-15 2000-05-30 Texas Instruments Incorporated Method for growing high-quality crystalline Si quantum wells for RTD structures
US6262462B1 (en) * 1998-06-22 2001-07-17 Motorola, Inc. Enhanced dielectric constant gate insulator
US6103008A (en) * 1998-07-30 2000-08-15 Ut-Battelle, Llc Silicon-integrated thin-film structure for electro-optic applications
JP2002521309A (en) * 1998-07-30 2002-07-16 ユーティバトル・エルエルシイ Control of crystal anisotropy of perovskite oxide on semiconductor-based substrate
US6248459B1 (en) 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6241821B1 (en) 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6143072A (en) * 1999-04-06 2000-11-07 Ut-Battelle, Llc Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
US6652989B2 (en) 1999-04-06 2003-11-25 Ut-Battelle, Llc Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface
US6605151B1 (en) 1999-11-29 2003-08-12 Northwestern University Oxide thin films and composites and related methods of deposition
US6479173B1 (en) 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6680126B1 (en) * 2000-04-27 2004-01-20 Applied Thin Films, Inc. Highly anisotropic ceramic thermal barrier coating materials and related composites
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
AU2001271293A1 (en) * 2000-06-28 2002-01-08 Motorola, Inc. Semiconductor structure, device, circuit, and process
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
CN1449458A (en) * 2000-07-24 2003-10-15 摩托罗拉公司 Thin-film metallic oxide structure and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
KR100370504B1 (en) * 2000-08-03 2003-01-30 한국화학연구원 Epitaxial growth of a high quality magnesium oxide film using a cubic silicon carbide buffer layer on a silicon (100) substrate
US6518609B1 (en) * 2000-08-31 2003-02-11 University Of Maryland Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
US6224669B1 (en) 2000-09-14 2001-05-01 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6638838B1 (en) * 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
AU2002228719A1 (en) * 2000-11-16 2002-05-27 Motorola, Inc. Single crystalline oxide on a semiconductor substrate
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US20030001207A1 (en) * 2000-11-22 2003-01-02 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant subtrate for materials used to form the same
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
US20020140013A1 (en) * 2001-04-02 2002-10-03 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing a stable template
US20020153524A1 (en) * 2001-04-19 2002-10-24 Motorola Inc. Structure and method for fabricating semiconductor structures and devices utilizing perovskite stacks
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
US20020167005A1 (en) * 2001-05-11 2002-11-14 Motorola, Inc Semiconductor structure including low-leakage, high crystalline dielectric materials and methods of forming same
US20020195057A1 (en) * 2001-06-21 2002-12-26 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6933566B2 (en) * 2001-07-05 2005-08-23 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US6852575B2 (en) * 2001-07-05 2005-02-08 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6992321B2 (en) * 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003038878A2 (en) * 2001-10-26 2003-05-08 Motorola Inc. Method for fabricating semiconductor structures
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6869838B2 (en) 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7005302B2 (en) * 2004-04-07 2006-02-28 Advanced Micro Devices, Inc. Semiconductor on insulator substrate and devices formed therefrom
US20060288928A1 (en) * 2005-06-10 2006-12-28 Chang-Beom Eom Perovskite-based thin film structures on miscut semiconductor substrates
US7364989B2 (en) * 2005-07-01 2008-04-29 Sharp Laboratories Of America, Inc. Strain control of epitaxial oxide films using virtual substrates
US7718516B2 (en) * 2006-03-23 2010-05-18 The University Of Hong Kong Method for epitaxial growth of (110)-oriented SrTiO3 thin films on silicon without template
US7892964B2 (en) * 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
CN101651150B (en) * 2008-08-12 2012-04-18 中国科学院物理研究所 Full oxide heterostructure field effect transistor
US8389300B2 (en) * 2010-04-02 2013-03-05 Centre National De La Recherche Scientifique Controlling ferroelectricity in dielectric films by process induced uniaxial strain
US8778767B2 (en) 2010-11-18 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and fabrication methods thereof
DE102015108865A1 (en) * 2015-06-03 2016-12-08 Universität Rostock Moldings containing piezoactive calcium titanium oxide, a process for their preparation and excitation and use of piezoactive calcium titanium oxide as a piezoelectric molded body or component of piezoelectric molded bodies
US20180151301A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Epitaxial perovskite materials for optoelectronics

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3854828T2 (en) * 1987-08-24 1996-08-22 Sumitomo Electric Industries Process for producing a thin layer of composite superconducting oxide
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
EP0523275B1 (en) * 1991-07-19 1996-02-28 International Business Machines Corporation Enhanced superconducting field-effect transistor with inverted MISFET structure and method for making the same
JP3026869B2 (en) * 1991-10-31 2000-03-27 ローム株式会社 Manufacturing method of semiconductor nonvolatile memory device
JP3130353B2 (en) * 1991-12-20 2001-01-31 ローム株式会社 Method of manufacturing device using ferroelectric film
JP3251625B2 (en) * 1992-02-24 2002-01-28 ローム株式会社 Field effect transistor
US5432015A (en) * 1992-05-08 1995-07-11 Westaim Technologies, Inc. Electroluminescent laminate with thick film dielectric
JPH06151872A (en) * 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Fet device
US5323023A (en) * 1992-12-02 1994-06-21 Xerox Corporation Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors
FI92897C (en) * 1993-07-20 1995-01-10 Planar International Oy Ltd Process for producing a layer structure for electroluminescence components
US5330931A (en) * 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit

Also Published As

Publication number Publication date
CA2261769A1 (en) 1998-02-12
KR20000029832A (en) 2000-05-25
EP0950132A1 (en) 1999-10-20
WO1998005807A1 (en) 1998-02-12
JP2000517280A (en) 2000-12-26
EP0950132A4 (en) 2002-03-20
US5830270A (en) 1998-11-03
CA2261769C (en) 2005-09-06
KR100493881B1 (en) 2005-06-10
AU3903497A (en) 1998-02-25

Similar Documents

Publication Publication Date Title
WO1998005807A8 (en) CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
CA2151063A1 (en) C-Axis Perovskite Thin Films Grown on Silicon Dioxide
TW348320B (en) Ferroelectric member and process for producing the same
EP0342796A3 (en) Thin-film transistor
ATE202431T1 (en) METHOD FOR PRODUCING LAYER SUPERLITTING MATERIALS.
TW329037B (en) Semiconductor memory device
WO1997003468A1 (en) Dielectric capacitor and process for preparing the same
WO2002056669A3 (en) Thin film dielectric composite materials
KR970013383A (en) Forming method of ferroelectric thin film and manufacturing method of capacitor structure of semiconductor device
EP1253627A3 (en) Semiconductordevice having a ferroelectric capacitor and fabrication process thereof
WO2005043246A3 (en) Patterned ceramic films and method for producing the same
KR970021024A (en) Pyrochlor oxide with high dielectric constant and low temperature coefficient
EP1179861A3 (en) Piezoelectric element and process for producing the same
EP1035590A3 (en) Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory
KR970077329A (en) Ferroelectric film and its formation method
JPH07245236A (en) Dielectric capacitor and manufacture thereof
JP2000154008A5 (en)
CA2051778A1 (en) Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
JPS52147800A (en) Semiconductor ceramic capacitor composite and its method of manufacturing
EP0495994A4 (en) Semiconductor device and its manufacturing method
GR3020559T3 (en) Process for producing thin films of inorganic oxides of controlled stoichiometry.
EP1363320A4 (en) Ferroelectric thin film, metal thin film or oxide thin film, and method and apparatus for preparation thereof, and electric or electronic device using said thin film
Thomas et al. Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories
DE69224700T2 (en) Using a sintered Ba-Mg-W perovskite as a dielectric resonator and high frequency range and dielectric substrate in the high frequency range
Tsurumi et al. SIMULATION OF THE PROPERTY OF PEROVSKITE TYPE FERROELECTRICS

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AM AT AU AZ BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IS JP KE KG KP KR KZ LK LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TR TT UA UG UZ VN YU ZW AM AZ BY KG KZ MD RU TJ TM

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH KE LS MW SD SZ UG ZW AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM

121 Ep: the epo has been informed by wipo that ep was designated in this application
ENP Entry into the national phase

Ref document number: 2261769

Country of ref document: CA

Ref country code: CA

Ref document number: 2261769

Kind code of ref document: A

Format of ref document f/p: F

ENP Entry into the national phase

Ref country code: JP

Ref document number: 1998 508069

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 1019997000984

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 1997936337

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1997936337

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1019997000984

Country of ref document: KR

AK Designated states

Kind code of ref document: C1

Designated state(s): AM AT AU AZ BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IS JP KE KG KP KR KZ LK LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TR TT UA UG UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: C1

Designated state(s): GH KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG

CFP Corrected version of a pamphlet front page

Free format text: REVISED ABSTRACT RECEIVED BY THE INTERNATIONAL BUREAU AFTER COMPLETION OF THE TECHNICAL PREPARATIONS FOR INTERNATIONAL PUBLICATION

WWG Wipo information: grant in national office

Ref document number: 1019997000984

Country of ref document: KR