WO1998010457A1 - Matrix addressable display with electrostatic discharge protection - Google Patents
Matrix addressable display with electrostatic discharge protection Download PDFInfo
- Publication number
- WO1998010457A1 WO1998010457A1 PCT/US1997/015653 US9715653W WO9810457A1 WO 1998010457 A1 WO1998010457 A1 WO 1998010457A1 US 9715653 W US9715653 W US 9715653W WO 9810457 A1 WO9810457 A1 WO 9810457A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coupled
- emitter
- field emission
- emission display
- substrate
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000000605 extraction Methods 0.000 claims abstract description 24
- 230000015556 catabolic process Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/92—Means forming part of the display panel for the purpose of providing electrical connection to it
Definitions
- the present invention relates to electrostatic discharge protection in matrix addressable displays.
- Flat panel displays are widely used in a variety of applications, including computer displays.
- One suitable flat panel display is a field emission display.
- Field emission displays typically include a generally planar emitter substrate covered by a display screen. A surface of the emitter substrate has formed thereon an array of surface discontinuities or "emitters" projecting toward the display screen.
- the emitters are conical projections which may be integral to the substrate.
- contiguous groups of emitters are grouped into emitter sets in which the emitters in each emitter set are commonly connected.
- the emitter sets are typically arranged in an array of columns and rows, and a conductive extraction grid is positioned above the emitters.
- the extraction grid includes small openings into which the emitters project.
- All, or a portion, of the extraction grid is driven with a voltage of about 30-120 V.
- Each emitter set is then selectively activated by applying a voltage to the emitter set.
- the voltage differential between the extraction grid and the emitter sets produces an electric field extending from the extraction grid to the emitter set having a sufficient intensity to cause the emitters to emit electrons.
- the display screen is mounted directly above the extraction grid.
- the display screen is formed from a glass panel coated with a transparent conductive material that forms an anode biased to about 1-2 kV.
- the anode attracts the emitted electrons, causing the electrons to pass through the extraction grid.
- a cathodoluminescent layer covers a surface of the anode facing the extraction grid so that the electrons strike the cathodoluminescent layer as they travel toward the 1-2 kV potential of the anode.
- the electrons striking the cathodoluminescent layer cause the cathodoluminescent layer to emit light at the impact site. Emitted light then passes through the anode and the glass panel where it is visible to a viewer. The light emitted from each of the areas thus becomes all or part of a picture element or "pixel.”
- the brightness of the light produced in response to the emitted electrons depends, in part, upon the rate at which electrons strike the cathodoluminescent layer.
- the light intensity of each pixel can thus be controlled by controlling the current available to the corresponding emitter set.
- the electric potential between each emitter set and the extraction grid is selectively controlled by a column signal and a row signal through corresponding drive circuitry.
- the drive circuitry separately establishes current to each of the emitter sets.
- the openings into which the emitters project are very small. Consequently, the distances between the emitters and the grid sections are very short.
- a field emission display includes an electrostatic discharge (“ESD”) circuit coupled to discharge statically induced charge, thereby reducing damage to the field emission display.
- the field emission display includes an emitter substrate having a plurality of emitters formed thereon and an extraction grid formed from a plurality of grid sections adjacent to the emitter substrate.
- the ESD circuit is coupled between the grid sections and the emitter substrate to provide a current path to discharge statically induced charge when the voltage differential between the grid section and the emitter substrate exceeds a selected voltage.
- the ESD circuit preferably includes diodes having their anodes coupled to the emitter substrate and cathodes coupled to the grid sections.
- the ESD circuit includes a first portion coupled between the grid sections and a first reference potential and a second portion coupled between the emitter substrate and a second reference potential.
- the first portion is formed from a plurality of column protection diodes and the second portion is formed from a plurality of row protection diodes.
- the first portion of the ESD circuit discharges statically induced charge when the voltage differential between the grid section and the first reference potential exceeds a selected first voltage.
- the second portion provides a current path to discharge statically induced charge from the emitter substrate when the voltage differential between the emitter substrate in the second potential exceeds a second selected voltage.
- the ESD circuit is formed from p ⁇ junctions integrated into the emitter substrate.
- the ESD circuit is formed from pn junctions formed within an insulative layer carrying the grid sections.
- the field emission display also includes an ESD diode coupled between a transparent conductive anode on the display screen and a reference pad. The ESD diode has a breakdown voltage that exceeds the expected operating voltage of the transparent anode, so that the ESD diode only discharges the transparent anode when the voltage of the transparent anode is above its expected operating voltage.
- Figure 1 is an isometric view of a portion of a field emission display showing an emitter substrate and grid sections each coupled to respective sets of protection diodes where a display screen covering the emitter substrate and grid sections is shown in shadow.
- Figure 2 is a top plan view of a field emission display showing protection diodes coupled to respective row and column lines where the protection diodes are mounted outside of a package containing the emitter substrate.
- Figure 3 is a diagrammatic representation of a set of protection diodes coupled between respective grid sections and row lines of an emitter substrate.
- Figure 4 is a side cross-sectional view of a portion of an emitter substrate showing a protection diode integrated into the emitter substrate and connected to a grid section.
- Figure 5 is a side cross-sectional view in detail of a portion of a field emission display including an ESD diode coupled between a transparent anode and a reference potential and showing ESD protective tape covering a set of bonding pads.
- Figure 6 is a side cross-sectional view in detail of an emitter substrate formed on a glass base and including diodes formed within an insulative layer carrying an extraction grid.
- a field emission display 40 includes an emitter substrate 42 and a display screen 44.
- the emitter substrate 42 includes an array of emitter sets 46 on an upper surface of a semiconductor substrate 80.
- the emitter sets 46 are arranged in rows and columns with the emitter sets 46 in each row connected by n-regions 82 in the substrate 80.
- the n-regions 82 are each coupled to respective row lines 48.
- the emitter substrate 42 is represented by an array of only eleven rows and five columns for clarity of presentation, one skilled in the art will recognize that such emitter substrates 42 typically are formed from an array of hundreds of rows with each row having hundreds of emitter sets 46.
- each emitter set 46 is represented by a single conical emitter, one skilled in the art will recognize that such emitter sets 46 typically include several emitters that are commonly connected.
- a conductive extraction grid 49 having several grid sections 50 is positioned above the emitter substrate 42 atop an insulative layer 47 (removed for clarity of presentation in Figure 1, but visible in Figures 4, 5 and 6).
- the grid sections 50 are aligned along respective columns, each of which intersect all of the rows of emitter sets 46 on the emitter substrate 42.
- Each of the grid sections 50 is connected to a respective column line 51.
- the screen 44 is a conventional field emission display screen positioned opposite the emitter substrate 42 and the grid sections 50.
- the screen 44 includes a transparent panel 52 having a transparent conductive anode 54 on a surface facing the emitter substrate 42.
- a cathodoluminescent layer 56 coats the anode 54 between the anode 54 and the grid sections 50.
- selected ones of the column lines 51 are biased at a grid voltage VQ of about 30-120 V and the anode 54 is biased at a high voltage V A , such as 1-2 kV.
- V Q grid voltage
- V A high voltage
- an emitter set 46 is connected to a voltage that is sufficiently lower than the grid voltage V G , for example, 0 volts, the voltage difference between the grid section 50 and the emitter set 46 produces an intense electric field between the grid section 50 and the emitter set 46 in a row intersecting the grid section 50. The electric field causes the emitter set 46 to emit electrons according to the Fowler-Nordheim equation.
- the emitted electrons are attracted by the high anode voltage V A and travel toward the anode 54 where they strike the cathodoluminescent layer 56, causing the cathodoluminescent layer 56 to emit light around the impact site.
- the emitted light passes through the transparent anode 54 and the transparent panel 52 where it is visible to an observer.
- the intensity of light emitted by the cathodoluminescent layer 56 depends upon the rate at which electrons emitted by the emitter sets 46 strike the cathodoluminescent layer 56.
- the rate at which the emitter sets 46 emit electrons is controlled in turn by the voltage difference between the grid section 50 and the intersecting emitter set 46.
- the voltage difference is produced in control circuitry (not shown) in response to an input signal Vr j.
- the field emission display 40 includes electrostatic discharge (ESD) circuits 58, 60 coupled to the column lines 1 and row lines 48.
- the column ESD circuit 58 is formed from separate column protection diodes 62 having their cathodes coupled to d e column lines 51 and their anodes coupled to a first reference voltage V ⁇ .
- the row ESD circuit 60 is formed from separate row protection diodes 64 having their cathodes coupled to separate row lines and their anodes coupled to a second reference voltage V 2 .
- the protection diodes 62, 64 are discrete diodes having well-defined reverse-bias breakdown voltages on the order of 200 V-500 V and formed according to conventional ESD diode techniques.
- , V 2 are preferably ground although other voltages may be used, depending upon the application.
- the effect of the protection diodes 62, 64 can best be seen by considering the relative voltages of the grid sections 50 and the emitter sets 46.
- handling, packaging or operation of the emitter substrate 42 may induce a static charge that can raise the voltage of the row lines 48 or column lines 51 to several thousand volts above ground.
- the resulting voltage difference between a grid section 50 and a respective emitter set 46 produces a very intense electric field.
- the intense electric field causes the emitter set 46 to emit electrons very rapidly.
- the emitter set 46 due to the small size of the individual emitters, is unable to sustain the high flow of electrons without damage. Consequently, the electron flow damages or destroys the emitter set 46.
- the display screen 44 is sealed to the frame 70 such that the base 68, frame 70 and display screen 44 together form a sealed package containing the emitter substrate 42.
- Conductive traces 72 are formed on an upper surface of the base 68 and extend from within the sealed frame 70 to an exposed region of the base 68.
- the traces 72 are conventional conductive traces formed through conventional methods, such as photolithographic patterning. The traces 72 do not break the seal, because the frame 70 is sealed to the base 68 and the traces 72 with a hermetic seal.
- Each of the traces includes a bonding pad 73 to allow connection to the respective row or column line 48, 51.
- the upper surface of the base 68 includes a pair of large conductive reference pads 74, 76 connected to the first and second reference potentials V
- the protection diodes 62, 64 extend from the respective traces 72 to the respective reference pads 74, 76, respectively.
- the protection diodes 62, 64 are electrically connected to the traces 72 and the reference pads 74, 76 through conventional surface mounted bonding techniques, such as solder or conductive epoxy.
- Figure 3 shows diagrammatically an alternative embodiment where protection diodes 66 are coupled directly between the column lines 51 and d e row lines 48. This embodiment eliminates the separate row and column protection diodes 62, 64 of Figure 1.
- the protection diodes 66 prevent the voltage of the row lines 48 from exceeding the voltage of the grid sections 50 by more than the forward breakdown voltages of the protection diodes 66. Additionally, the protection diodes 66 provide a discharge path for electrons when the voltage of the column lines 5 1 exceeds the voltage of the row lines 48 by the reverse-bias breakdown voltage of the protection diodes 66.
- Figure 4 shows one implementation of the field emission display
- the emitter sets 46 and protection diodes 66 are integrated into an n-type semiconductor substrate 100.
- the emitter sets 46 are fo ⁇ ned from p-type material on respective p-wells 102 in the n-type substrate 100, and the protection diodes 66 are produced by forming respective n+ regions 104 in the p-well 102.
- the p-well 102 thus forms the anode of the protection diode 66 and the n+ region 104 forms the cathode.
- the p-well 102 also extends across the substrate 100 and connects to the row line 48.
- the n-type substrate 100 is biased to a positive voltage.
- the n+ region 104 is connected to the respective grid section 50 through a conductive via 106 that passes through the insulative layer 47.
- the protection diode 66 conducts electrons from the row line to the grid section 50.
- the protection diode 66 conducts electrons from the grid section 50 to the row line 48.
- Figure 5 shows another embodiment of the field emission display
- the transparent conductive anode 54 is protected against electrostatic discharge by a high voltage ESD diode 120 having its cathode connected to the transparent anode 54.
- the anode of the ESD diode 120 is connected to a reference trace 1 18 held at a reference voltage VREF-
- the ESD diode 120 has a breakdown voltage of approximately 1500-2500 V. This is higher than that of the previously described protection diodes 62, 64, because the transparent anode 54 operates at approximately 1-2 kV which would break down the 200-500 V diodes 62, 64, 66 described previously.
- the ESD diode 120 provides a current path to discharge statically induced charges when the voltage of the transparent anode 54 rises above the reference voltage VR £F by more than the breakdown voltage of the ESD diode 120.
- the ESD diode 120 therefore prevents statically induced charge from arcing between the transparent anode 54 and other locations within the field emission display 40, such as the grid sections 50 or the emitter sets 46 ( Figure 1).
- ESD tape 122 is a commercially available conductive tape.
- the ESD tape 122 connects all of the row lines 48 and/or column lines 51 to the reference potential VREF.
- the ESD tape 122 is removed once the field emission display 40 is ready for operation so that the voltages of the row lines 48 and column lines 51 can be controlled independently.
- Figure 6 shows another embodiment of the invention in which the emitter sets 46 are formed on chrome row lines 135 on an upper surface of a glass substrate 136.
- ESD diodes 138 are formed in the insulative layer 47 that carries the grid sections 50.
- the ESD diodes 138 are formed by etching a hole through the insulative layer 47 to expose the row lines 135. Then, an n-region 132 is deposited in the hole directly on the row line 125. Next, a p-region 134 is deposited within the hole, atop the n-region 132 such that the interface between the p-region 134 and n-region 132 forms a pn junction.
- the grid sections 50 are formed by depositing and patterning a conductive material, such as chrome, on the insulative layer 47, the conductive material of the grid sections 50 covers the p-regions 134, forming electrical connections thereto.
- the cathodes of the diodes 138 are thus coupled to the row lines 135 and the anodes of the diodes 138 are coupled to the grid sections 50.
- the processing steps above may be modified depending upon the particular application.
- the grid sections 50 for the row lines 135 are metal
- p+ and n+ regions may be formed in the p-region 134 and n-region 132 to improve electrical contact between the ESD diodes 138 and the grid section 50 and/or row line 135.
- the row protection diodes 64 of Figure 1 are shown as being commonly coupled to the second reference potential V 2 , one skilled in the art will recognize that the row protection diodes 64 can be coupled separately to respective reference potentials.
- the diode structure of Figure 6 can be adapted for implementation with semiconductor substrates.
- the ESD protection circuits described herein need not be diodes.
- Other ESD protective circuits, such as bipolar transistors, can also be used.
- the ESD diode 120 and ESD tape 122 of the embodiment of Figure 5 can be combined with any of the other embodiments described herein. Accordingly, the invention is not limited, except as by the appended claims.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97939819A EP0923788B1 (en) | 1996-09-04 | 1997-09-04 | Matrix addressable display with electrostatic discharge protection |
AU41828/97A AU4182897A (en) | 1996-09-04 | 1997-09-04 | Matrix addressable display with electrostatic discharge protection |
DE69713344T DE69713344T2 (en) | 1996-09-04 | 1997-09-04 | MATRIX-ADDRESSED DISPLAY DEVICE WITH PROTECTION AGAINST ELECTROSTATIC DISCHARGE |
AT97939819T ATE219287T1 (en) | 1996-09-04 | 1997-09-04 | MATRIX ADDRESSED DISPLAY DEVICE WITH ELECTROSTATIC DISCHARGE PROTECTION |
JP51292798A JP3992081B2 (en) | 1996-09-04 | 1997-09-04 | Matrix addressable display |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/706,295 US5844370A (en) | 1996-09-04 | 1996-09-04 | Matrix addressable display with electrostatic discharge protection |
US08/706,295 | 1996-09-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998010457A1 true WO1998010457A1 (en) | 1998-03-12 |
Family
ID=24836984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/015653 WO1998010457A1 (en) | 1996-09-04 | 1997-09-04 | Matrix addressable display with electrostatic discharge protection |
Country Status (8)
Country | Link |
---|---|
US (3) | US5844370A (en) |
EP (1) | EP0923788B1 (en) |
JP (1) | JP3992081B2 (en) |
KR (1) | KR100442904B1 (en) |
AT (1) | ATE219287T1 (en) |
AU (1) | AU4182897A (en) |
DE (1) | DE69713344T2 (en) |
WO (1) | WO1998010457A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6525462B1 (en) * | 1999-03-24 | 2003-02-25 | Micron Technology, Inc. | Conductive spacer for field emission displays and method |
US6894665B1 (en) | 2000-07-20 | 2005-05-17 | Micron Technology, Inc. | Driver circuit and matrix type display device using driver circuit |
KR100363095B1 (en) * | 2000-12-06 | 2002-12-05 | 삼성전자 주식회사 | Liquid crystal device driver circuit for electrostatic discharge protection |
FR2821982B1 (en) | 2001-03-09 | 2004-05-07 | Commissariat Energie Atomique | FLAT SCREEN WITH ELECTRONIC EMISSION AND AN INTEGRATED ANODE CONTROL DEVICE |
US20020156474A1 (en) * | 2001-04-20 | 2002-10-24 | Michael Wack | Polyaxial locking plate |
KR100513599B1 (en) * | 2002-12-10 | 2005-09-09 | 한국전자통신연구원 | Electrostatic discharge protection structure and method for manufacturing the same |
US6750470B1 (en) * | 2002-12-12 | 2004-06-15 | General Electric Company | Robust field emitter array design |
JP2006172888A (en) * | 2004-12-15 | 2006-06-29 | Toshiba Corp | Image display device |
TWI266426B (en) * | 2005-04-13 | 2006-11-11 | Ind Tech Res Inst | Method for manufacturing protection structure of active matrix triode field emission device |
DE102012105630B4 (en) | 2012-06-27 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lighting arrangement with lighting device and method for operating a lighting device |
US9711392B2 (en) * | 2012-07-25 | 2017-07-18 | Infineon Technologies Ag | Field emission devices and methods of making thereof |
KR102479823B1 (en) * | 2017-06-30 | 2022-12-21 | 엘지전자 주식회사 | Display device using semiconductor light emitting device |
KR101981991B1 (en) * | 2017-10-11 | 2019-05-24 | 엘지디스플레이 주식회사 | Touch display panel and touch display device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5162704A (en) * | 1991-02-06 | 1992-11-10 | Futaba Denshi Kogyo K.K. | Field emission cathode |
EP0589523A1 (en) * | 1992-09-25 | 1994-03-30 | Koninklijke Philips Electronics N.V. | Display device |
JPH06232332A (en) * | 1993-02-08 | 1994-08-19 | Hitachi Ltd | Semiconductor device |
JPH07302876A (en) * | 1994-05-10 | 1995-11-14 | Fuji Electric Co Ltd | Protective circuit against electrostatic breakdown |
Family Cites Families (14)
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US3921078A (en) * | 1971-04-20 | 1975-11-18 | Jeol Ltd | Breakdown protection for field emission electron gun |
US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US5015912A (en) * | 1986-07-30 | 1991-05-14 | Sri International | Matrix-addressed flat panel display |
US5019002A (en) * | 1989-07-12 | 1991-05-28 | Honeywell, Inc. | Method of manufacturing flat panel backplanes including electrostatic discharge prevention and displays made thereby |
US5103114A (en) | 1990-03-19 | 1992-04-07 | Apple Computer, Inc. | Circuit technique for creating predetermined duty cycle |
JP2656843B2 (en) * | 1990-04-12 | 1997-09-24 | 双葉電子工業株式会社 | Display device |
US5682085A (en) * | 1990-05-23 | 1997-10-28 | Canon Kabushiki Kaisha | Multi-electron beam source and image display device using the same |
US5103144A (en) * | 1990-10-01 | 1992-04-07 | Raytheon Company | Brightness control for flat panel display |
US5212426A (en) * | 1991-01-24 | 1993-05-18 | Motorola, Inc. | Integrally controlled field emission flat display device |
US5210472A (en) * | 1992-04-07 | 1993-05-11 | Micron Technology, Inc. | Flat panel display in which low-voltage row and column address signals control a much pixel activation voltage |
US5359256A (en) * | 1992-07-30 | 1994-10-25 | The United States Of America As Represented By The Secretary Of The Navy | Regulatable field emitter device and method of production thereof |
US5442193A (en) * | 1994-02-22 | 1995-08-15 | Motorola | Microelectronic field emission device with breakdown inhibiting insulated gate electrode |
US5500546A (en) * | 1994-09-16 | 1996-03-19 | Texas Instruments Incorporated | ESD protection circuits using Zener diodes |
US5528108A (en) * | 1994-09-22 | 1996-06-18 | Motorola | Field emission device arc-suppressor |
-
1996
- 1996-09-04 US US08/706,295 patent/US5844370A/en not_active Expired - Fee Related
-
1997
- 1997-09-04 KR KR10-1999-7001835A patent/KR100442904B1/en not_active IP Right Cessation
- 1997-09-04 AU AU41828/97A patent/AU4182897A/en not_active Abandoned
- 1997-09-04 EP EP97939819A patent/EP0923788B1/en not_active Expired - Lifetime
- 1997-09-04 WO PCT/US1997/015653 patent/WO1998010457A1/en active IP Right Grant
- 1997-09-04 DE DE69713344T patent/DE69713344T2/en not_active Expired - Lifetime
- 1997-09-04 AT AT97939819T patent/ATE219287T1/en active
- 1997-09-04 JP JP51292798A patent/JP3992081B2/en not_active Expired - Fee Related
-
1998
- 1998-10-27 US US09/181,232 patent/US6266034B1/en not_active Expired - Fee Related
-
2000
- 2000-08-16 US US09/640,826 patent/US6356250B1/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5162704A (en) * | 1991-02-06 | 1992-11-10 | Futaba Denshi Kogyo K.K. | Field emission cathode |
EP0589523A1 (en) * | 1992-09-25 | 1994-03-30 | Koninklijke Philips Electronics N.V. | Display device |
JPH06232332A (en) * | 1993-02-08 | 1994-08-19 | Hitachi Ltd | Semiconductor device |
JPH07302876A (en) * | 1994-05-10 | 1995-11-14 | Fuji Electric Co Ltd | Protective circuit against electrostatic breakdown |
Non-Patent Citations (2)
Title |
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PATENT ABSTRACTS OF JAPAN vol. 018, no. 603 (E - 1632) 16 November 1994 (1994-11-16) * |
PATENT ABSTRACTS OF JAPAN vol. 096, no. 003 29 March 1996 (1996-03-29) * |
Also Published As
Publication number | Publication date |
---|---|
DE69713344T2 (en) | 2003-01-30 |
JP2001500279A (en) | 2001-01-09 |
KR100442904B1 (en) | 2004-08-02 |
DE69713344D1 (en) | 2002-07-18 |
JP3992081B2 (en) | 2007-10-17 |
US5844370A (en) | 1998-12-01 |
ATE219287T1 (en) | 2002-06-15 |
AU4182897A (en) | 1998-03-26 |
EP0923788B1 (en) | 2002-06-12 |
US6266034B1 (en) | 2001-07-24 |
KR20010029472A (en) | 2001-04-06 |
US6356250B1 (en) | 2002-03-12 |
EP0923788A1 (en) | 1999-06-23 |
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