WO1999002288A1 - Intermetallic aluminides and silicides sputtering targets, and methods of making same - Google Patents
Intermetallic aluminides and silicides sputtering targets, and methods of making same Download PDFInfo
- Publication number
- WO1999002288A1 WO1999002288A1 PCT/US1998/013719 US9813719W WO9902288A1 WO 1999002288 A1 WO1999002288 A1 WO 1999002288A1 US 9813719 W US9813719 W US 9813719W WO 9902288 A1 WO9902288 A1 WO 9902288A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- die
- pressure
- vacuum
- powders
- article
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/04—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000501855A JP2003535969A (en) | 1997-07-11 | 1998-07-01 | Intermetallic aluminide and silicide sputtering target and method of manufacturing the same |
EP98933058A EP1021265A4 (en) | 1997-07-11 | 1998-07-01 | Intermetallic aluminides and silicides sputtering targets, and methods of making same |
KR1020007000281A KR20010021722A (en) | 1997-07-11 | 1998-07-01 | Intermetallic aluminides and silicides sputtering targets, and methods of making same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5226297P | 1997-07-11 | 1997-07-11 | |
US60/052,262 | 1997-07-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999002288A1 true WO1999002288A1 (en) | 1999-01-21 |
Family
ID=21976446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/013719 WO1999002288A1 (en) | 1997-07-11 | 1998-07-01 | Intermetallic aluminides and silicides sputtering targets, and methods of making same |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1021265A4 (en) |
TW (1) | TW398020B (en) |
WO (1) | WO1999002288A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2798395A1 (en) * | 1999-08-03 | 2001-03-16 | Praxair Technology Inc | METHOD FOR MANUFACTURING HIGH-DENSITY INTER-METAL SPRAYING TARGETS |
EP1350861A1 (en) * | 2002-03-29 | 2003-10-08 | Alloys for Technical Applications S.A. | Process for fabrication and regeneration of sputtering targets |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663120A (en) * | 1985-04-15 | 1987-05-05 | Gte Products Corporation | Refractory metal silicide sputtering target |
US4762558A (en) * | 1987-05-15 | 1988-08-09 | Rensselaer Polytechnic Institute | Production of reactive sintered nickel aluminide material |
US4889745A (en) * | 1986-11-28 | 1989-12-26 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Method for reactive preparation of a shaped body of inorganic compound of metal |
US5330701A (en) * | 1992-02-28 | 1994-07-19 | Xform, Inc. | Process for making finely divided intermetallic |
US5418071A (en) * | 1992-02-05 | 1995-05-23 | Kabushiki Kaisha Toshiba | Sputtering target and method of manufacturing the same |
US5508000A (en) * | 1990-05-15 | 1996-04-16 | Kabushiki Kaisha Toshiba | Sputtering target and method of manufacturing the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01136969A (en) * | 1987-11-24 | 1989-05-30 | Mitsubishi Metal Corp | Manufacture of target for titanium silicide sputtering |
JPH01249619A (en) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | Production of metal silicide target having high melting point |
JP2794382B2 (en) * | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | Silicide target for sputtering and method for producing the same |
-
1998
- 1998-07-01 WO PCT/US1998/013719 patent/WO1999002288A1/en not_active Application Discontinuation
- 1998-07-01 EP EP98933058A patent/EP1021265A4/en not_active Withdrawn
- 1998-07-08 TW TW087111029A patent/TW398020B/en not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663120A (en) * | 1985-04-15 | 1987-05-05 | Gte Products Corporation | Refractory metal silicide sputtering target |
US4889745A (en) * | 1986-11-28 | 1989-12-26 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Method for reactive preparation of a shaped body of inorganic compound of metal |
US4762558A (en) * | 1987-05-15 | 1988-08-09 | Rensselaer Polytechnic Institute | Production of reactive sintered nickel aluminide material |
US5508000A (en) * | 1990-05-15 | 1996-04-16 | Kabushiki Kaisha Toshiba | Sputtering target and method of manufacturing the same |
US5418071A (en) * | 1992-02-05 | 1995-05-23 | Kabushiki Kaisha Toshiba | Sputtering target and method of manufacturing the same |
US5330701A (en) * | 1992-02-28 | 1994-07-19 | Xform, Inc. | Process for making finely divided intermetallic |
US5608911A (en) * | 1992-02-28 | 1997-03-04 | Shaw; Karl G. | Process for producing finely divided intermetallic and ceramic powders and products thereof |
Non-Patent Citations (1)
Title |
---|
See also references of EP1021265A4 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2798395A1 (en) * | 1999-08-03 | 2001-03-16 | Praxair Technology Inc | METHOD FOR MANUFACTURING HIGH-DENSITY INTER-METAL SPRAYING TARGETS |
JP2001073128A (en) * | 1999-08-03 | 2001-03-21 | Praxair St Technol Inc | Production of high density sputtering target composed of two or more kinds of metals |
EP1350861A1 (en) * | 2002-03-29 | 2003-10-08 | Alloys for Technical Applications S.A. | Process for fabrication and regeneration of sputtering targets |
BE1014736A5 (en) * | 2002-03-29 | 2004-03-02 | Alloys For Technical Applic S | Manufacturing method and charging for target sputtering. |
Also Published As
Publication number | Publication date |
---|---|
EP1021265A4 (en) | 2003-08-27 |
EP1021265A1 (en) | 2000-07-26 |
TW398020B (en) | 2000-07-11 |
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