WO1999028914A3 - Programmable sub-surface aggregating metallization structure and method of making same - Google Patents

Programmable sub-surface aggregating metallization structure and method of making same Download PDF

Info

Publication number
WO1999028914A3
WO1999028914A3 PCT/US1998/025830 US9825830W WO9928914A3 WO 1999028914 A3 WO1999028914 A3 WO 1999028914A3 US 9825830 W US9825830 W US 9825830W WO 9928914 A3 WO9928914 A3 WO 9928914A3
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
ion conductor
voltage
anode
dendrite
Prior art date
Application number
PCT/US1998/025830
Other languages
French (fr)
Other versions
WO1999028914A2 (en
Inventor
Michael N Kozicki
William C West
Original Assignee
Axon Technologies Corp
Univ Arizona
Michael N Kozicki
William C West
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US09/555,612 priority Critical patent/US6418049B1/en
Priority to AT98963793T priority patent/ATE235093T1/en
Priority to AU19040/99A priority patent/AU751949C/en
Priority to EP98963793A priority patent/EP1044452B1/en
Priority to JP2000523669A priority patent/JP2001525606A/en
Priority to CA002312841A priority patent/CA2312841C/en
Priority to DE69812425T priority patent/DE69812425T2/en
Application filed by Axon Technologies Corp, Univ Arizona, Michael N Kozicki, William C West filed Critical Axon Technologies Corp
Publication of WO1999028914A2 publication Critical patent/WO1999028914A2/en
Publication of WO1999028914A3 publication Critical patent/WO1999028914A3/en
Priority to HK01102651A priority patent/HK1032139A1/en
Priority to US10/153,284 priority patent/US6798692B2/en
Priority to US10/267,079 priority patent/US6940745B2/en
Priority to US10/268,107 priority patent/US6985378B2/en
Priority to US10/952,115 priority patent/US7142450B2/en
Priority to US11/125,350 priority patent/US7145794B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

Abstract

A programmable sub-surface aggregating metallization structure (100) includes an ion conductor (110) such as a chalcogenide glass which includes metal ions and at least two electrodes (120, 130) disposed at opposing surfaces of the ion conductor (110). Preferably, the ion conductor (110) includes a chalcogenide material with Group IB or Group IIB metals. One of the two electrodes (120, 130) is preferably configured as a cathode and the other as an anode. When a voltage is applied to between the anode and cathode, a metal dendrite (140) grows from the cathode through the ion conductor (11) toward the anode. The grow rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back toward the cathode by reversing the voltage polarity at the anode and the cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor (110) and connects the electrodes (120, 130), thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.
PCT/US1998/025830 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same WO1999028914A2 (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
US09/555,612 US6418049B1 (en) 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same
AT98963793T ATE235093T1 (en) 1997-12-04 1998-12-04 PROGRAMMABLE METALLIZATION STRUCTURE WITH NEAR-SURFACE SOLIDIFICATION AND PRODUCTION PROCESS THEREOF
AU19040/99A AU751949C (en) 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same
EP98963793A EP1044452B1 (en) 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same
JP2000523669A JP2001525606A (en) 1997-12-04 1998-12-04 Programmable subsurface set metallization structure and method of making same
CA002312841A CA2312841C (en) 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same
DE69812425T DE69812425T2 (en) 1997-12-04 1998-12-04 PROGRAMMABLE METALLIZATION STRUCTURE WITH SURFACE-MOUNTED FASTENING AND MANUFACTURING METHOD THEREFOR
HK01102651A HK1032139A1 (en) 1997-12-04 2001-04-12 Programmable sub-surface aggregating metallization structure and method of making same
US10/153,284 US6798692B2 (en) 1997-12-04 2002-05-21 Programmable sub-surface aggregating metallization structure and method of making same
US10/267,079 US6940745B2 (en) 1998-12-04 2002-10-08 Programmable microelectronic devices and methods of forming and programming same
US10/268,107 US6985378B2 (en) 1998-12-04 2002-10-09 Programmable microelectronic device, structure, and system and method of forming the same
US10/952,115 US7142450B2 (en) 1997-12-04 2004-09-27 Programmable sub-surface aggregating metallization structure and method of making same
US11/125,350 US7145794B2 (en) 1998-12-04 2005-05-09 Programmable microelectronic devices and methods of forming and programming same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6750997P 1997-12-04 1997-12-04
US60/067,509 1997-12-04

Related Child Applications (4)

Application Number Title Priority Date Filing Date
US55561298A A-371-Of-International 1998-12-04 1998-12-04
US09/502,915 Continuation US6487106B1 (en) 1998-12-04 2000-02-11 Programmable microelectronic devices and method of forming and programming same
US10/267,079 Continuation US6940745B2 (en) 1998-12-04 2002-10-08 Programmable microelectronic devices and methods of forming and programming same
US10/952,115 Continuation US7142450B2 (en) 1997-12-04 2004-09-27 Programmable sub-surface aggregating metallization structure and method of making same

Publications (2)

Publication Number Publication Date
WO1999028914A2 WO1999028914A2 (en) 1999-06-10
WO1999028914A3 true WO1999028914A3 (en) 1999-08-26

Family

ID=22076456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/025830 WO1999028914A2 (en) 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same

Country Status (11)

Country Link
US (3) US6418049B1 (en)
EP (2) EP1235227B1 (en)
JP (2) JP2001525606A (en)
KR (1) KR100371102B1 (en)
CN (1) CN1260734C (en)
AT (2) ATE274744T1 (en)
AU (1) AU751949C (en)
CA (1) CA2312841C (en)
DE (2) DE69812425T2 (en)
HK (1) HK1032139A1 (en)
WO (1) WO1999028914A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9552986B2 (en) 2002-08-29 2017-01-24 Micron Technology, Inc. Forming a memory device using sputtering to deposit silver-selenide film

Families Citing this family (202)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
EP1159743B1 (en) * 1999-02-11 2007-05-02 Arizona Board of Regents Programmable microelectronic devices and methods of forming and programming same
US20030107105A1 (en) * 1999-08-31 2003-06-12 Kozicki Michael N. Programmable chip-to-substrate interconnect structure and device and method of forming same
US7675766B2 (en) * 2000-02-11 2010-03-09 Axon Technologies Corporation Microelectric programmable device and methods of forming and programming the same
US8218350B2 (en) * 2000-02-11 2012-07-10 Axon Technologies Corporation Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
US7385219B2 (en) * 2000-02-11 2008-06-10 A{umlaut over (x)}on Technologies Corporation Optimized solid electrolyte for programmable metallization cell devices and structures
US7372065B2 (en) * 2000-02-11 2008-05-13 Axon Technologies Corporation Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same
US6653193B2 (en) 2000-12-08 2003-11-25 Micron Technology, Inc. Resistance variable device
US6638820B2 (en) * 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6818481B2 (en) 2001-03-07 2004-11-16 Micron Technology, Inc. Method to manufacture a buried electrode PCRAM cell
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6844608B2 (en) 2001-05-07 2005-01-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6855977B2 (en) * 2001-05-07 2005-02-15 Advanced Micro Devices, Inc. Memory device with a self-assembled polymer film and method of making the same
JP4731794B2 (en) * 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Switch element having memory effect and method for switching the element
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
US6781868B2 (en) * 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
CN1276518C (en) 2001-05-07 2006-09-20 先进微装置公司 Floating gate memory device using composite molecular material
US7102150B2 (en) 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
EP1434232B1 (en) * 2001-08-13 2007-09-19 Advanced Micro Devices, Inc. Memory cell
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6955940B2 (en) 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6709958B2 (en) 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6646902B2 (en) 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
JP3593582B2 (en) * 2001-09-19 2004-11-24 彰 土井 Storage element using electric field induced blackening of ion conductor containing silver ion
CN100448049C (en) * 2001-09-25 2008-12-31 独立行政法人科学技术振兴机构 Electric device comprising solid electrolyte
WO2003036735A2 (en) * 2001-10-26 2003-05-01 Arizona Board Of Regents Programmable surface control devices and method of making same
US6815818B2 (en) 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US20030143782A1 (en) 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
KR100433407B1 (en) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 Upright-type vacuum cleaner
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US7087919B2 (en) * 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6847535B2 (en) 2002-02-20 2005-01-25 Micron Technology, Inc. Removable programmable conductor memory card and associated read/write device and method of operation
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US8156057B2 (en) * 2003-03-27 2012-04-10 Knowm Tech, Llc Adaptive neural network utilizing nanotechnology-based components
US6889216B2 (en) * 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US7412428B2 (en) * 2002-03-12 2008-08-12 Knowmtech, Llc. Application of hebbian and anti-hebbian learning to nanotechnology-based physical neural networks
US9269043B2 (en) 2002-03-12 2016-02-23 Knowm Tech, Llc Memristive neural processor utilizing anti-hebbian and hebbian technology
US20040039717A1 (en) * 2002-08-22 2004-02-26 Alex Nugent High-density synapse chip using nanoparticles
US7398259B2 (en) * 2002-03-12 2008-07-08 Knowmtech, Llc Training of a physical neural network
US20030236760A1 (en) * 2002-06-05 2003-12-25 Alex Nugent Multi-layer training in a physical neural network formed utilizing nanotechnology
US7392230B2 (en) * 2002-03-12 2008-06-24 Knowmtech, Llc Physical neural network liquid state machine utilizing nanotechnology
US6849868B2 (en) * 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
CN100514695C (en) 2002-03-15 2009-07-15 阿克松技术公司 Programmable structure of micro-electronics
US6751114B2 (en) 2002-03-28 2004-06-15 Micron Technology, Inc. Method for programming a memory cell
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
WO2003094227A1 (en) 2002-04-30 2003-11-13 Japan Science And Technology Agency Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device
US6731528B2 (en) * 2002-05-03 2004-05-04 Micron Technology, Inc. Dual write cycle programmable conductor memory system and method of operation
US7752151B2 (en) * 2002-06-05 2010-07-06 Knowmtech, Llc Multilayer training in a physical neural network formed utilizing nanotechnology
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US7015494B2 (en) 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US7018863B2 (en) * 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US7827131B2 (en) * 2002-08-22 2010-11-02 Knowm Tech, Llc High density synapse chip using nanoparticles
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US6867996B2 (en) * 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US6864521B2 (en) 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US6856002B2 (en) 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US6807079B2 (en) * 2002-11-01 2004-10-19 Hewlett-Packard Development Company, L.P. Device having a state dependent upon the state of particles dispersed in a carrier
US6903394B2 (en) * 2002-11-27 2005-06-07 Micron Technology, Inc. CMOS imager with improved color response
DE10256486A1 (en) * 2002-12-03 2004-07-15 Infineon Technologies Ag Method for producing a memory cell, memory cell and memory cell arrangement
US7337160B2 (en) * 2002-12-31 2008-02-26 Bae Systems Information And Electronic Systems Integration Inc. Use of radiation-hardened chalcogenide technology for spaceborne reconfigurable digital processing systems
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US7394680B2 (en) * 2003-03-18 2008-07-01 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
US7778062B2 (en) * 2003-03-18 2010-08-17 Kabushiki Kaisha Toshiba Resistance change memory device
CN1759450B (en) 2003-03-18 2012-02-29 株式会社东芝 Programmable resistance memory device
US7400522B2 (en) * 2003-03-18 2008-07-15 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
JP5110414B2 (en) * 2003-03-19 2012-12-26 大日本印刷株式会社 Organic bistable element, organic bistable memory device using the same, and driving method thereof
US7050327B2 (en) 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
JP4594740B2 (en) 2003-04-11 2010-12-08 インターナショナル・ビジネス・マシーンズ・コーポレーション Programmable semiconductor device
US20050041467A1 (en) * 2003-06-18 2005-02-24 Macronix International Co., Ltd. Chalcogenide memory
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7426501B2 (en) * 2003-07-18 2008-09-16 Knowntech, Llc Nanotechnology neural network methods and systems
DE10340405B3 (en) * 2003-09-02 2004-12-23 Infineon Technologies Ag Integrated semiconductor memory with selective reduction of effective bit line length for reducing current requirement by partial disconnection of second bit line section from first bit line section
US6903361B2 (en) * 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
JP4792714B2 (en) * 2003-11-28 2011-10-12 ソニー株式会社 Storage element and storage device
US7050319B2 (en) 2003-12-03 2006-05-23 Micron Technology, Inc. Memory architecture and method of manufacture and operation thereof
JP4608875B2 (en) * 2003-12-03 2011-01-12 ソニー株式会社 Storage device
TW200529414A (en) * 2004-02-06 2005-09-01 Renesas Tech Corp Storage
DE102004010243A1 (en) * 2004-03-03 2005-05-19 Infineon Technologies Ag Static memory cell, has circuit for limiting current through PMC resistance when changing from high-resistance state to low-resistance state
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
DE102004024610B3 (en) * 2004-05-18 2005-12-29 Infineon Technologies Ag Solid electrolyte switching element
DE102004029436B4 (en) * 2004-06-18 2009-03-05 Qimonda Ag A method of manufacturing a solid electrolyte material region
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
DE102004037450B4 (en) * 2004-08-02 2009-04-16 Qimonda Ag Method for operating a switching device
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7224598B2 (en) * 2004-09-02 2007-05-29 Hewlett-Packard Development Company, L.P. Programming of programmable resistive memory devices
JP4529654B2 (en) 2004-11-15 2010-08-25 ソニー株式会社 Storage element and storage device
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US20060131555A1 (en) * 2004-12-22 2006-06-22 Micron Technology, Inc. Resistance variable devices with controllable channels
FR2880177B1 (en) * 2004-12-23 2007-05-18 Commissariat Energie Atomique MEMORY PMC HAVING IMPROVED RETENTION TIME AND WRITING SPEED
WO2006070693A1 (en) * 2004-12-27 2006-07-06 Nec Corporation Switching element, switching element driving method, switching element manufacturing method, rewritable logic integrated circuit, and memory element
WO2006070698A1 (en) * 2004-12-27 2006-07-06 Nec Corporation Switching device, driving method and manufacturing method of switching device, integrated circuit device, and memory device
WO2006070681A1 (en) * 2004-12-28 2006-07-06 Nec Corporation Switching device and rewritable logic integrated circuit
WO2006070683A1 (en) * 2004-12-28 2006-07-06 Nec Corporation Switching element, production mehod for switching element, rewritable logical integrated circuit, and memory element
JP4815804B2 (en) * 2005-01-11 2011-11-16 ソニー株式会社 Storage element and storage device
JP5211483B2 (en) * 2005-01-17 2013-06-12 日本電気株式会社 Solid electrolyte switching element, manufacturing method thereof, and integrated circuit
US7280392B2 (en) * 2005-01-26 2007-10-09 Infineon Technologies, Ag Integrated memory device and method for operating the same
DE102005004107A1 (en) * 2005-01-28 2006-08-17 Infineon Technologies Ag Integrated semiconductor memory with an arrangement of nonvolatile memory cells and method
US7502769B2 (en) * 2005-01-31 2009-03-10 Knowmtech, Llc Fractal memory and computational methods and systems based on nanotechnology
US7409375B2 (en) * 2005-05-23 2008-08-05 Knowmtech, Llc Plasticity-induced self organizing nanotechnology for the extraction of independent components from a data stream
DE102005005325B4 (en) * 2005-02-04 2011-12-15 Adesto Technology Corp., Inc. Method for producing a resistively switching non-volatile memory cell
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7749805B2 (en) * 2005-03-10 2010-07-06 Qimonda Ag Method for manufacturing an integrated circuit including an electrolyte material layer
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7709289B2 (en) * 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7420396B2 (en) * 2005-06-17 2008-09-02 Knowmtech, Llc Universal logic gate utilizing nanotechnology
US7599895B2 (en) 2005-07-07 2009-10-06 Knowm Tech, Llc Methodology for the configuration and repair of unreliable switching elements
JP4635759B2 (en) * 2005-07-19 2011-02-23 ソニー株式会社 Storage element and storage device
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
KR101100427B1 (en) * 2005-08-24 2011-12-30 삼성전자주식회사 Nonvolatile semiconductor memory device comprising ion conducting layer and methods of manufacturing and operating the same
JP4919146B2 (en) 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 Switching element
US7254073B2 (en) * 2005-09-29 2007-08-07 Infineon Technologies Ag Memory device having an array of resistive memory cells
EP1770709B1 (en) * 2005-09-29 2010-07-07 Qimonda AG Memory device comprising an array of resistive memory cells with bit lines precharging
US20090289371A1 (en) * 2005-12-15 2009-11-26 Nec Corporation Switching element and method of manufacturing the same
US8035096B2 (en) 2006-02-09 2011-10-11 Nec Corporation Switching device, rewritable logic integrated circuit, and memory device
KR100994866B1 (en) * 2006-02-09 2010-11-16 가부시키가이샤 히타치세이사쿠쇼 Semiconductor device, and its manufacturing method
US8492810B2 (en) * 2006-02-28 2013-07-23 Qimonda Ag Method of fabricating an integrated electronic circuit with programmable resistance cells
CN101454920B (en) 2006-03-30 2010-12-22 日本电气株式会社 Switching device and method for manufacturing switching device
US7515454B2 (en) 2006-08-02 2009-04-07 Infineon Technologies Ag CBRAM cell and CBRAM array, and method of operating thereof
US20080037324A1 (en) * 2006-08-14 2008-02-14 Geoffrey Wen-Tai Shuy Electrical thin film memory
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
EP2064736A1 (en) * 2006-09-04 2009-06-03 Nxp B.V. Fabrication of self-assembled nanowire-type interconnects on a semiconductor device
TWI328871B (en) * 2006-09-04 2010-08-11 Ind Tech Res Inst Resistance type memory device
JP4869006B2 (en) * 2006-09-27 2012-02-01 株式会社東芝 Method for controlling semiconductor memory device
US7583527B2 (en) 2006-09-29 2009-09-01 Infineon Technologies Ag Tunable resistor and method for operating a tunable resistor
US8766224B2 (en) 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US7551470B2 (en) * 2006-10-19 2009-06-23 International Business Machines Corporation Non volatile memory RAD-hard (NVM-rh) system
JP5104763B2 (en) * 2006-11-22 2012-12-19 日本電気株式会社 Nonvolatile memory device
US7930257B2 (en) * 2007-01-05 2011-04-19 Knowm Tech, Llc Hierarchical temporal memory utilizing nanotechnology
JP4446054B2 (en) 2007-03-23 2010-04-07 独立行政法人産業技術総合研究所 Nonvolatile memory element
US7719886B2 (en) * 2007-05-03 2010-05-18 Qimonda North America Corp. Multi-level resistive memory cell using different crystallization speeds
US7813158B2 (en) 2007-05-14 2010-10-12 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Recordable electrical memory
US7859893B2 (en) * 2007-05-31 2010-12-28 Micron Technology, Inc. Phase change memory structure with multiple resistance states and methods of programming and sensing same
US7692951B2 (en) * 2007-06-12 2010-04-06 Kabushiki Kaisha Toshiba Resistance change memory device with a variable resistance element formed of a first and a second composite compound
US7646254B2 (en) * 2007-08-30 2010-01-12 Honeywell International Inc. Radiation hard oscillator and differential circuit design
US8064243B2 (en) * 2007-11-13 2011-11-22 Qimonda Ag Method and apparatus for an integrated circuit with programmable memory cells, data system
US8189365B2 (en) 2007-11-21 2012-05-29 Nec Corporation Semiconductor device configuration method
US20090140232A1 (en) * 2007-11-30 2009-06-04 Klaus-Dieter Ufert Resistive Memory Element
JP4466738B2 (en) 2008-01-09 2010-05-26 ソニー株式会社 Storage element and storage device
US7961506B2 (en) * 2008-02-05 2011-06-14 Micron Technology, Inc. Multiple memory cells with rectifying device
US20090200535A1 (en) * 2008-02-12 2009-08-13 Klaus-Dieter Ufert Non-Volatile Memory Element with Improved Temperature Stability
KR20090090563A (en) * 2008-02-21 2009-08-26 삼성전자주식회사 Semiconductor devices having resistive memory element
KR101480292B1 (en) * 2008-03-17 2015-01-12 삼성전자주식회사 Methods of forming a semiconductor device including a phase change layer
US8097902B2 (en) * 2008-07-10 2012-01-17 Seagate Technology Llc Programmable metallization memory cells via selective channel forming
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US7923715B2 (en) * 2008-12-06 2011-04-12 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Chalcogenide nanoionic-based radio frequency switch
US8742531B2 (en) 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
US7929345B2 (en) * 2008-12-23 2011-04-19 Actel Corporation Push-pull memory cell configured for simultaneous programming of n-channel and p-channel non-volatile transistors
US8455855B2 (en) * 2009-01-12 2013-06-04 Micron Technology, Inc. Memory cell having dielectric memory element
US8907455B2 (en) * 2009-01-28 2014-12-09 Hewlett-Packard Development Company, L.P. Voltage-controlled switches
US8120955B2 (en) * 2009-02-13 2012-02-21 Actel Corporation Array and control method for flash based FPGA cell
US8426839B1 (en) 2009-04-24 2013-04-23 Adesto Technologies Corporation Conducting bridge random access memory (CBRAM) device structures
US8269203B2 (en) 2009-07-02 2012-09-18 Actel Corporation Resistive RAM devices for programmable logic devices
US8279665B2 (en) * 2009-11-23 2012-10-02 International Business Machines Corporation Memory cell and select element
US8687403B1 (en) 2010-06-10 2014-04-01 Adesto Technologies Corporation Circuits having programmable impedance elements
TWI431762B (en) * 2010-09-16 2014-03-21 Univ Nat Sun Yat Sen Resistive switching memories and the manufacturing method thereof
US8829482B1 (en) 2010-09-23 2014-09-09 Adesto Technologies Corporation Variable impedance memory device structure and method of manufacture including programmable impedance memory cells and methods of forming the same
JP5348108B2 (en) * 2010-10-18 2013-11-20 ソニー株式会社 Memory element
WO2012065083A1 (en) 2010-11-14 2012-05-18 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And Dendritic metal structures, methods for making dendritic metal structures, and devices including them
CN102714210B (en) 2010-11-19 2015-08-12 松下电器产业株式会社 The manufacture method of non-volatile memory device and non-volatile memory device
US20120188819A1 (en) * 2011-01-21 2012-07-26 Baolab Microsystems Sl Methods and systems for mems cmos programmable memories and related devices
US8642460B2 (en) 2011-06-08 2014-02-04 International Business Machines Corporation Semiconductor switching device and method of making the same
US9099633B2 (en) 2012-03-26 2015-08-04 Adesto Technologies Corporation Solid electrolyte memory elements with electrode interface for improved performance
US8847191B1 (en) 2012-03-27 2014-09-30 Adesto Technologies Corporation Programmable impedance memory elements, methods of manufacture, and memory devices containing the same
US8730752B1 (en) 2012-04-02 2014-05-20 Adesto Technologies Corporation Circuits and methods for placing programmable impedance memory elements in high impedance states
JP5698714B2 (en) * 2012-08-29 2015-04-08 株式会社東芝 Nonvolatile memory device
US9208870B2 (en) 2012-09-13 2015-12-08 Adesto Technologies Corporation Multi-port memory devices and methods having programmable impedance elements
US9773141B2 (en) 2013-03-12 2017-09-26 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Dendritic structures and tags
WO2014146003A1 (en) 2013-03-15 2014-09-18 Adesto Technologies Corporation Nonvolatile memory with semimetal or semiconductors electrodes
US9391270B1 (en) 2014-10-31 2016-07-12 Adesto Technologies Corporation Memory cells with vertically integrated tunnel access device and programmable impedance element
WO2016073910A1 (en) 2014-11-07 2016-05-12 Arizona Board Of Regents On Behalf Of Arizona State University Information coding in dendritic structures and tags
US10475998B2 (en) 2015-01-30 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd Resistive random access memory structure
WO2017091560A1 (en) 2015-11-24 2017-06-01 Arizona Board Of Regents On Behalf Of Arizona State University Low-voltage microfluidic valve device and system for regulating the flow of fluid
US10270451B2 (en) 2015-12-17 2019-04-23 Microsemi SoC Corporation Low leakage ReRAM FPGA configuration cell
US10147485B2 (en) 2016-09-29 2018-12-04 Microsemi Soc Corp. Circuits and methods for preventing over-programming of ReRAM-based memory cells
WO2018106450A1 (en) 2016-12-09 2018-06-14 Microsemi Soc Corp. Resistive random access memory cell
WO2018175973A1 (en) 2017-03-23 2018-09-27 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with copper-silicon oxide programmable metallization cells
US10466969B2 (en) 2017-05-08 2019-11-05 Arizona Board Of Regents On Behalf Of Arizona State University Tunable true random number generator using programmable metallization cell(s)
WO2018232402A1 (en) 2017-06-16 2018-12-20 Arizona Board Of Regents On Behalf Of Arizona State University Polarized scanning of dendritic identifiers
CN111033624B (en) 2017-08-11 2023-10-03 美高森美SoC公司 Circuit and method for programming a resistive random access memory device
US11598015B2 (en) 2018-04-26 2023-03-07 Arizona Board Of Regents On Behalf Of Arizona State University Fabrication of dendritic structures and tags
US11244722B2 (en) 2019-09-20 2022-02-08 Arizona Board Of Regents On Behalf Of Arizona State University Programmable interposers for electrically connecting integrated circuits
US11935843B2 (en) 2019-12-09 2024-03-19 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with silicon-rich dielectric devices
WO2021149780A1 (en) * 2020-01-24 2021-07-29 パナソニック株式会社 Semiconductor device and method for driving same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476545A (en) * 1980-11-24 1984-10-09 Siemens Aktiengesellschaft Dynamic semiconductor memory cell with random access and method for its production
US5512773A (en) * 1993-12-23 1996-04-30 U.S. Philips Corporation Switching element with memory provided with Schottky tunnelling barrier

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3765956A (en) 1965-09-28 1973-10-16 C Li Solid-state device
US3715634A (en) 1968-07-05 1973-02-06 Energy Conversion Devices Inc Switchable current controlling device with inactive material dispersed in the active semiconductor material
US3530441A (en) 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
US3868651A (en) 1970-08-13 1975-02-25 Energy Conversion Devices Inc Method and apparatus for storing and reading data in a memory having catalytic material to initiate amorphous to crystalline change in memory structure
US3886577A (en) 1973-09-12 1975-05-27 Energy Conversion Devices Inc Filament-type memory semiconductor device and method of making the same
US3980505A (en) 1973-09-12 1976-09-14 Buckley William D Process of making a filament-type memory semiconductor device
US3846767A (en) 1973-10-24 1974-11-05 Energy Conversion Devices Inc Method and means for resetting filament-forming memory semiconductor device
US3875566A (en) 1973-10-29 1975-04-01 Energy Conversion Devices Inc Resetting filament-forming memory semiconductor devices with multiple reset pulses
DE2806464C3 (en) * 1978-02-15 1980-09-11 Garching Instrumente, Gesellschaft Zur Industriellen Nutzung Von Forschungsergebnissen Mbh, 8000 Muenchen Electrical component
US4199692A (en) 1978-05-16 1980-04-22 Harris Corporation Amorphous non-volatile ram
US4312046A (en) * 1979-10-04 1982-01-19 Harris Corporation Vertical fuse and method of fabrication
JPS6037558B2 (en) * 1981-07-06 1985-08-27 三菱電機株式会社 Programmable read-only memory
US4874711A (en) * 1987-05-26 1989-10-17 Georgia Tech Research Corporation Method for altering characteristics of active semiconductor devices
JPH0770731B2 (en) * 1990-11-22 1995-07-31 松下電器産業株式会社 Electroplastic element
US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5177567A (en) 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5138481A (en) * 1991-07-23 1992-08-11 Ford Motor Company Electrochromic device with color gradient and method of making the device
JPH0621531A (en) 1992-07-01 1994-01-28 Rohm Co Ltd Neuro element
US5596500A (en) 1993-10-25 1997-01-21 Trimble Navigation Limited Map reading system for indicating a user's position on a published map with a global position system receiver and a database
US5646629A (en) 1994-05-16 1997-07-08 Trimble Navigation Limited Memory cartridge for a handheld electronic video game
US5500532A (en) 1994-08-18 1996-03-19 Arizona Board Of Regents Personal electronic dosimeter
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US5933365A (en) 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
US5912839A (en) 1998-06-23 1999-06-15 Energy Conversion Devices, Inc. Universal memory element and method of programming same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476545A (en) * 1980-11-24 1984-10-09 Siemens Aktiengesellschaft Dynamic semiconductor memory cell with random access and method for its production
US5512773A (en) * 1993-12-23 1996-04-30 U.S. Philips Corporation Switching element with memory provided with Schottky tunnelling barrier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9552986B2 (en) 2002-08-29 2017-01-24 Micron Technology, Inc. Forming a memory device using sputtering to deposit silver-selenide film

Also Published As

Publication number Publication date
EP1044452B1 (en) 2003-03-19
KR100371102B1 (en) 2003-02-06
ATE235093T1 (en) 2003-04-15
EP1235227A3 (en) 2002-09-04
AU751949B2 (en) 2002-09-05
EP1235227B1 (en) 2004-08-25
AU1904099A (en) 1999-06-16
DE69812425T2 (en) 2004-01-15
US6418049B1 (en) 2002-07-09
EP1235227A2 (en) 2002-08-28
DE69825923T2 (en) 2005-09-01
KR20010032827A (en) 2001-04-25
EP1044452A2 (en) 2000-10-18
US20050111290A1 (en) 2005-05-26
DE69825923D1 (en) 2004-09-30
ATE274744T1 (en) 2004-09-15
HK1032139A1 (en) 2001-07-06
CA2312841A1 (en) 1999-06-10
WO1999028914A2 (en) 1999-06-10
CA2312841C (en) 2007-05-22
AU751949C (en) 2003-08-21
US7142450B2 (en) 2006-11-28
CN1284199A (en) 2001-02-14
DE69812425D1 (en) 2003-04-24
US20020190350A1 (en) 2002-12-19
JP2006253711A (en) 2006-09-21
US6798692B2 (en) 2004-09-28
JP2001525606A (en) 2001-12-11
CN1260734C (en) 2006-06-21
EP1044452A4 (en) 2001-05-09

Similar Documents

Publication Publication Date Title
WO1999028914A3 (en) Programmable sub-surface aggregating metallization structure and method of making same
HK1023844A1 (en) Programmable metallization cell structure and method of making same.
DE4042287C2 (en) Device for reactive dusting of electrically insulating material
EP0809314A3 (en) Positive active material, method of manufacturing and secondary battery using the same
EP0803924A3 (en) Organic carbonate additives for nonaqueous electrolyte in alkali metal electrochemical cells
WO2003036735A3 (en) Programmable surface control devices and method of making same
CA2126487A1 (en) Iontophoresis device
AU8583998A (en) Tin alloy electrode compositions for lithium batteries
CA2204858A1 (en) Process for making copper metal powder, copper oxides and copper foil
EP0352796A3 (en) Recording material
AU1922500A (en) High rate electrochemical cell and assembly method
CA2163064A1 (en) Battery having solid ion conductive polymer electrolyte
AU4227801A (en) Method and device for the regulation of the concentration of metal ions in an electrolyte and use thereof
DE4239218C2 (en) Arrangement for preventing flashovers in a plasma process room
KR910011341A (en) Method and apparatus for coating substrates
Yang et al. The Behavior and Improvement of SnO 2-based Inert Anodes in Aluminium Electrolysis
WO1997040485A3 (en) Hollow cathodes for plasma-containing display devices and method of producing same
EP0332337A3 (en) Electrode and construction thereof
WO1998039791A3 (en) Cold electrode for gas discharges
CA2120854A1 (en) Light valve with low emissivity coating as electrode
AU7452198A (en) Electrode for non-aqueous electrolytic cells
DE2432383C2 (en) Reaction vessel for depositing semiconductor material on heated substrates
PL294252A1 (en) Method of making an electric conductor and electric conductor, in particular that for an electrolyzer electrode
EP0963463B1 (en) Method and device for making layer electrodes
AU567220B2 (en) Etched metal electrodes for nonaqueous electrochemical cells

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 98813239.7

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

ENP Entry into the national phase

Ref document number: 2312841

Country of ref document: CA

Ref document number: 2312841

Country of ref document: CA

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2000 523669

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020007006146

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 1998963793

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 19040/99

Country of ref document: AU

WWE Wipo information: entry into national phase

Ref document number: 09555612

Country of ref document: US

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1998963793

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020007006146

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 1020007006146

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 1998963793

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 19040/99

Country of ref document: AU