WO1999035688B1 - Gettering device for ion capture - Google Patents

Gettering device for ion capture

Info

Publication number
WO1999035688B1
WO1999035688B1 PCT/US1999/000599 US9900599W WO9935688B1 WO 1999035688 B1 WO1999035688 B1 WO 1999035688B1 US 9900599 W US9900599 W US 9900599W WO 9935688 B1 WO9935688 B1 WO 9935688B1
Authority
WO
WIPO (PCT)
Prior art keywords
ions
charged molecules
reacting
structure according
material capable
Prior art date
Application number
PCT/US1999/000599
Other languages
French (fr)
Other versions
WO1999035688A1 (en
Inventor
Donald D Montgomery
Original Assignee
Combimatrix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Combimatrix Corp filed Critical Combimatrix Corp
Priority to AU22216/99A priority Critical patent/AU2221699A/en
Priority to JP2000527976A priority patent/JP2002501307A/en
Priority to EP99902174A priority patent/EP1048072A1/en
Priority to CA002317537A priority patent/CA2317537A1/en
Publication of WO1999035688A1 publication Critical patent/WO1999035688A1/en
Publication of WO1999035688B1 publication Critical patent/WO1999035688B1/en

Links

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0046—Sequential or parallel reactions, e.g. for the synthesis of polypeptides or polynucleotides; Apparatus and devices for combinatorial chemistry or for making molecular arrays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00277—Apparatus
    • B01J2219/00497—Features relating to the solid phase supports
    • B01J2219/00527—Sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
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    • B01J2219/00596—Solid-phase processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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    • B01J2219/00603—Making arrays on substantially continuous surfaces
    • B01J2219/00605—Making arrays on substantially continuous surfaces the compounds being directly bound or immobilised to solid supports
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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    • B01J2219/00603—Making arrays on substantially continuous surfaces
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    • B01J2219/0061—The surface being organic
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    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
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    • B01J2219/00614—Delimitation of the attachment areas
    • B01J2219/00621—Delimitation of the attachment areas by physical means, e.g. trenches, raised areas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00583—Features relative to the processes being carried out
    • B01J2219/00603—Making arrays on substantially continuous surfaces
    • B01J2219/00605—Making arrays on substantially continuous surfaces the compounds being directly bound or immobilised to solid supports
    • B01J2219/00623—Immobilisation or binding
    • B01J2219/00626—Covalent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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    • B01J2219/00623—Immobilisation or binding
    • B01J2219/0063—Other, e.g. van der Waals forces, hydrogen bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
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    • B01J2219/00605—Making arrays on substantially continuous surfaces the compounds being directly bound or immobilised to solid supports
    • B01J2219/00632—Introduction of reactive groups to the surface
    • B01J2219/00637—Introduction of reactive groups to the surface by coating it with another layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
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    • B01J2219/00603—Making arrays on substantially continuous surfaces
    • B01J2219/00639—Making arrays on substantially continuous surfaces the compounds being trapped in or bound to a porous medium
    • B01J2219/00641—Making arrays on substantially continuous surfaces the compounds being trapped in or bound to a porous medium the porous medium being continuous, e.g. porous oxide substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J2219/00653—Making arrays on substantially continuous surfaces the compounds being bound to electrodes embedded in or on the solid supports
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    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
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    • B01J2219/00603—Making arrays on substantially continuous surfaces
    • B01J2219/00659—Two-dimensional arrays
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    • B01J2219/00709—Type of synthesis
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Abstract

A 'getter' structure for reducing or preventing contamination by ions or charged molecules in integrated circuitry is provided. The 'getter' structure may function by active or passive means to reduce ions in the presence of integrated circuitry thereby extending the life of such circuitry.

Claims

AMENDED CLAIMS [received by the International Bureau on 23 June 1999 (23.06.99); original claims 1-14 replaced by new claims 1-26 (2 pages)]
1. A structure for scavenging ions or charged molecules in integrated circuitry comprising a material capable of reacting with ions or charged molecules that is proximate a source of cttniu-rninating ions or charged molecules wherein the material capable of reacting with ions or charged molecules generates an electric field.
2. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules is selected from the group consisting of a metal, an inorganic semiconducting material, a organic semiconducting material, an organometallic semiconducting material and an ionic fluid.
3. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules forms a substantially flat sheet.
4. The structure according to claim I wherein the material capable of reacting with ions or charged molecules forms a substantial ring around a source of ions.
5. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules forms a substantial barrier between an integrated circuit and an external source of ions.
6. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules forms a substantial barrier between two or more components of an integrated circuit
7. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules forms a substantial barrier between two or more lines of an integrated circuit.
8. The structure according to claim 1 wherein the integrated circuit is implanted in animal tissue.
9. The structure according to claim 1 wherein the integrated circuit is suspended in an ionic solution.
10. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules is further capable of monitoring ion levels.
1 . The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules further comprises a MOS gate.
12. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules substantially forms an electrode.
13. The structure according to claim 1 wherein the material capable of reacting with ions or charged molecules is placed substantially at the interface between an insulating dielectric and a metallization layer operably linked to an electrode.
14. A structure for scavenging ions or charged molecules in integrated circuitry comprising a material capable of reacting with ions or charged molecules that is proximate a source of contaminating ions or charged molecules wherein the structure is contained within the integrated circuitry and wherein the structure performs an integral function of the integrated circuitry.
15. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules is selected from the group consisting of a metal, an inorganic semiconducting material, a organic semiconducting material, an organometallic semicoriductmg material and an ionic fluid.
16. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules forms a substantially flat sheet.
17. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules forms a substantial ring around a source of ions.
18. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules forms a substantial barrier between an integrated circuit and an external source of ions.
19. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules forms a substantial barrier between two or more components of an integrated circuit.
20. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules forms a substantial barrier between two or more lines of an integrated circuit.
21. The structure according to claim 14 wherein the integrated circuit is implanted in animal tissue.
22. The structure according to claim 14 wherein the integrated circuit is suspended in an ionic solution.
23. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules is further capable of monitoring ion levels.
24. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules further comprises a MOS gate.
25. The structure according to claim 14 wherein the material capable of reacting with ions or charged molecules substantially forms an electrode.
26. The structure according to claim 14 wherein die material capable of reacting with ions or charged molecules is placed substantially at the interface between an insulating dielectric and a metallization layer operably linked to an electrode.
PCT/US1999/000599 1998-01-05 1999-01-05 Gettering device for ion capture WO1999035688A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU22216/99A AU2221699A (en) 1998-01-05 1999-01-05 Gettering device for ion capture
JP2000527976A JP2002501307A (en) 1998-01-05 1999-01-05 Gettering device for ion capture
EP99902174A EP1048072A1 (en) 1998-01-05 1999-01-05 Gettering device for ion capture
CA002317537A CA2317537A1 (en) 1998-01-05 1999-01-05 Gettering device for ion capture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/003,075 1998-01-05
US09/003,075 US6093302A (en) 1998-01-05 1998-01-05 Electrochemical solid phase synthesis

Publications (2)

Publication Number Publication Date
WO1999035688A1 WO1999035688A1 (en) 1999-07-15
WO1999035688B1 true WO1999035688B1 (en) 1999-08-19

Family

ID=21703998

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/000599 WO1999035688A1 (en) 1998-01-05 1999-01-05 Gettering device for ion capture

Country Status (7)

Country Link
US (2) US6093302A (en)
EP (2) EP1048072A1 (en)
JP (1) JP2002501307A (en)
CN (1) CN1291350A (en)
AU (1) AU2221699A (en)
CA (1) CA2317537A1 (en)
WO (1) WO1999035688A1 (en)

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US6306348B1 (en) * 1993-11-01 2001-10-23 Nanogen, Inc. Inorganic permeation layer for micro-electric device
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