WO1999066535A3 - Apparatus and method relating to charged particles - Google Patents
Apparatus and method relating to charged particles Download PDFInfo
- Publication number
- WO1999066535A3 WO1999066535A3 PCT/GB1999/001879 GB9901879W WO9966535A3 WO 1999066535 A3 WO1999066535 A3 WO 1999066535A3 GB 9901879 W GB9901879 W GB 9901879W WO 9966535 A3 WO9966535 A3 WO 9966535A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- array
- magnetic
- charged particles
- field
- longitudinal axis
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/06—Electron- or ion-optical arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/28—Static spectrometers
- H01J49/32—Static spectrometers using double focusing
- H01J49/322—Static spectrometers using double focusing with a magnetic sector of 90 degrees, e.g. Mattauch-Herzog type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/055—Arrangements for energy or mass analysis magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Particle Accelerators (AREA)
- Electron Tubes For Measurement (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU43788/99A AU4378899A (en) | 1998-06-19 | 1999-06-15 | Apparatus and method relating to charged particles |
DE69933930T DE69933930D1 (en) | 1998-06-19 | 1999-06-15 | DEVICE AND METHOD FOR INFLUENCING A CHARGE BEAM BEAM |
JP2000555277A JP4677099B2 (en) | 1998-06-19 | 1999-06-15 | Apparatus and method for charged particles |
EP99926600A EP1090411B1 (en) | 1998-06-19 | 1999-06-15 | Apparatus and method relating to charged particles |
US09/736,253 US6498348B2 (en) | 1998-06-19 | 2000-12-15 | Apparatus and method relating to charged particles |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9813327.5A GB9813327D0 (en) | 1998-06-19 | 1998-06-19 | Apparatus and method relating to charged particles |
GB9813327.5 | 1998-06-19 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/736,253 Continuation US6498348B2 (en) | 1998-06-19 | 2000-12-15 | Apparatus and method relating to charged particles |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999066535A2 WO1999066535A2 (en) | 1999-12-23 |
WO1999066535A3 true WO1999066535A3 (en) | 2000-04-27 |
Family
ID=10834093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1999/001879 WO1999066535A2 (en) | 1998-06-19 | 1999-06-15 | Apparatus and method relating to charged particles |
Country Status (7)
Country | Link |
---|---|
US (1) | US6498348B2 (en) |
EP (1) | EP1090411B1 (en) |
JP (1) | JP4677099B2 (en) |
AU (1) | AU4378899A (en) |
DE (1) | DE69933930D1 (en) |
GB (1) | GB9813327D0 (en) |
WO (1) | WO1999066535A2 (en) |
Families Citing this family (48)
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US6888146B1 (en) * | 1998-04-10 | 2005-05-03 | The Regents Of The University Of California | Maskless micro-ion-beam reduction lithography system |
US6639227B1 (en) * | 2000-10-18 | 2003-10-28 | Applied Materials, Inc. | Apparatus and method for charged particle filtering and ion implantation |
FR2826765A1 (en) * | 2001-06-29 | 2003-01-03 | Thomson Plasma | METHOD OF CONNECTING A PLASMA PANEL TO ITS POWER SUPPLY IN AN IMAGE VIEWING DEVICE |
JP2003203836A (en) * | 2001-12-28 | 2003-07-18 | Canon Inc | Exposure system, control method therefor, and method for manufacturing device |
US6664547B2 (en) * | 2002-05-01 | 2003-12-16 | Axcelis Technologies, Inc. | Ion source providing ribbon beam with controllable density profile |
US6881966B2 (en) * | 2003-05-15 | 2005-04-19 | Axcelis Technologies, Inc. | Hybrid magnetic/electrostatic deflector for ion implantation systems |
IL156719A0 (en) * | 2003-06-30 | 2004-01-04 | Axiomic Technologies Inc | A multi-stage open ion system in various topologies |
KR100589243B1 (en) * | 2003-08-27 | 2006-06-15 | 엘지전자 주식회사 | Plasma Display Panel And Module thereof |
US20050061997A1 (en) * | 2003-09-24 | 2005-03-24 | Benveniste Victor M. | Ion beam slit extraction with mass separation |
JP4643588B2 (en) | 2003-12-12 | 2011-03-02 | セメクイップ, インコーポレイテッド | Control of vapor flow sublimated from solids |
KR20050086196A (en) * | 2004-02-25 | 2005-08-30 | 엘지전자 주식회사 | Washing machine |
US7902527B2 (en) * | 2004-05-18 | 2011-03-08 | Jiong Chen | Apparatus and methods for ion beam implantation using ribbon and spot beams |
US7675050B2 (en) * | 2006-06-12 | 2010-03-09 | Advanced Ion Beam Technology, Inc. | Apparatus and method for ion beam implantation using ribbon and spot beams |
US7462843B2 (en) * | 2004-05-18 | 2008-12-09 | Advanced Ion Bean Technology Inc. | Apparatus and methods for ion beam implantation |
US6903350B1 (en) * | 2004-06-10 | 2005-06-07 | Axcelis Technologies, Inc. | Ion beam scanning systems and methods for improved ion implantation uniformity |
WO2006060378A2 (en) * | 2004-11-30 | 2006-06-08 | Purser Kenneth H | Broad energy-range ribbon ion beam collimation using a variable-gradient dipole |
US7598594B2 (en) * | 2004-12-20 | 2009-10-06 | Electronics And Telecommunications Research Institute | Wafer-scale microcolumn array using low temperature co-fired ceramic substrate |
US7598505B2 (en) * | 2005-03-08 | 2009-10-06 | Axcelis Technologies, Inc. | Multichannel ion gun |
US7498572B2 (en) * | 2005-09-14 | 2009-03-03 | Nissin Ion Equipment Co., Ltd. | Deflecting electromagnet and ion beam irradiating apparatus |
US7507978B2 (en) * | 2006-09-29 | 2009-03-24 | Axcelis Technologies, Inc. | Beam line architecture for ion implanter |
US20080116390A1 (en) * | 2006-11-17 | 2008-05-22 | Pyramid Technical Consultants, Inc. | Delivery of a Charged Particle Beam |
US7888652B2 (en) * | 2006-11-27 | 2011-02-15 | Nissin Ion Equipment Co., Ltd. | Ion implantation apparatus |
US7875125B2 (en) | 2007-09-21 | 2011-01-25 | Semequip, Inc. | Method for extending equipment uptime in ion implantation |
US8642959B2 (en) | 2007-10-29 | 2014-02-04 | Micron Technology, Inc. | Method and system of performing three-dimensional imaging using an electron microscope |
US7915597B2 (en) * | 2008-03-18 | 2011-03-29 | Axcelis Technologies, Inc. | Extraction electrode system for high current ion implanter |
US8124946B2 (en) * | 2008-06-25 | 2012-02-28 | Axcelis Technologies Inc. | Post-decel magnetic energy filter for ion implantation systems |
GB2478265B (en) * | 2008-09-03 | 2013-06-19 | Superion Ltd | Apparatus and method relating to the focusing of charged particles |
US8354653B2 (en) * | 2008-09-10 | 2013-01-15 | Varian Semiconductor Equipment Associates, Inc. | Techniques for manufacturing solar cells |
US8263941B2 (en) | 2008-11-13 | 2012-09-11 | Varian Semiconductor Equipment Associates, Inc. | Mass analysis magnet for a ribbon beam |
US8466431B2 (en) * | 2009-02-12 | 2013-06-18 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving extracted ion beam quality using high-transparency electrodes |
US9587292B2 (en) * | 2009-10-01 | 2017-03-07 | Advanced Applied Physics Solutions, Inc. | Method and apparatus for isolating the radioisotope molybdenum-99 |
JP2011171009A (en) * | 2010-02-16 | 2011-09-01 | Sii Nanotechnology Inc | Focused ion beam device |
GB201011862D0 (en) * | 2010-07-14 | 2010-09-01 | Thermo Fisher Scient Bremen | Ion detection arrangement |
US8921802B2 (en) * | 2011-03-17 | 2014-12-30 | Nicholas R. White | Mass analyzer apparatus and systems operative for focusing ribbon ion beams and for separating desired ion species from unwanted ion species in ribbon ion beams |
US8513619B1 (en) * | 2012-05-10 | 2013-08-20 | Kla-Tencor Corporation | Non-planar extractor structure for electron source |
US9053893B2 (en) * | 2013-03-14 | 2015-06-09 | Schlumberger Technology Corporation | Radiation generator having bi-polar electrodes |
US9117617B2 (en) * | 2013-06-24 | 2015-08-25 | Agilent Technologies, Inc. | Axial magnetic ion source and related ionization methods |
WO2016063740A1 (en) * | 2014-10-21 | 2016-04-28 | 国立研究開発法人理化学研究所 | Undulator magnet array and undulator |
US10176977B2 (en) | 2014-12-12 | 2019-01-08 | Agilent Technologies, Inc. | Ion source for soft electron ionization and related systems and methods |
US9870891B1 (en) * | 2016-02-24 | 2018-01-16 | Euclid Techlabs LLC | High gradient permanent magnet elements for charged particle beamlines |
US9905396B1 (en) * | 2016-10-18 | 2018-02-27 | Varian Semiconductor Equipment Associates, Inc. | Curved post scan electrode |
WO2018087594A1 (en) * | 2016-11-11 | 2018-05-17 | Nissin Ion Equipment C., Ltd. | Ion source |
CN107864546B (en) * | 2017-10-31 | 2019-06-07 | 华中科技大学 | A kind of stable modulating device of the beam intensity of cyclotron |
US11049691B2 (en) * | 2017-12-21 | 2021-06-29 | Varian Semiconductor Equipment Associates, Inc. | Ion beam quality control using a movable mass resolving device |
JP7201523B2 (en) * | 2018-06-07 | 2023-01-10 | 株式会社ニューフレアテクノロジー | Multi-electron beam deflector and multi-beam image acquisition device |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
CN111694045A (en) * | 2020-06-28 | 2020-09-22 | 核工业西南物理研究院 | Neutral particle analyzer and arrangement method for analyzing electromagnetic field and detection surface |
US11574796B1 (en) | 2021-07-21 | 2023-02-07 | Applied Materials, Inc. | Dual XY variable aperture in an ion implantation system |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753054A (en) * | 1980-09-16 | 1982-03-29 | Hitachi Ltd | Ion detector |
JPS60121659A (en) * | 1983-12-02 | 1985-06-29 | Toshiba Corp | Particle analyzer |
US4578589A (en) * | 1983-08-15 | 1986-03-25 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US4902993A (en) * | 1987-02-19 | 1990-02-20 | Kernforschungszentrum Karlsruhe Gmbh | Magnetic deflection system for charged particles |
JPH09298043A (en) * | 1996-04-30 | 1997-11-18 | Nissin Electric Co Ltd | Ion implanting device |
US5760405A (en) * | 1996-02-16 | 1998-06-02 | Eaton Corporation | Plasma chamber for controlling ion dosage in ion implantation |
Family Cites Families (15)
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US3141993A (en) * | 1959-12-24 | 1964-07-21 | Zeiss Jena Veb Carl | Very fine beam electron gun |
JPS476365Y1 (en) * | 1967-06-09 | 1972-03-06 | ||
JPS55161343A (en) * | 1979-06-01 | 1980-12-15 | Mitsubishi Electric Corp | Permanent magnet electromagnetic lens |
JPS6037642A (en) * | 1983-08-10 | 1985-02-27 | Hitachi Ltd | Mass separator for ion implanting device |
AT391772B (en) * | 1986-05-16 | 1990-11-26 | Ims Ionen Mikrofab Syst | ARRANGEMENT FOR POSITIONING THE IMAGE OF THE STRUCTURE OF A MASK ON A SUBSTRATE |
JPS6419660A (en) * | 1987-07-13 | 1989-01-23 | Nissin Electric Co Ltd | Ion beam irradiation device |
US5311028A (en) * | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
US5177366A (en) * | 1992-03-06 | 1993-01-05 | Eaton Corporation | Ion beam implanter for providing cross plane focusing |
JP3430557B2 (en) * | 1993-05-21 | 2003-07-28 | 日新電機株式会社 | Accelerator tube |
JPH0836988A (en) * | 1994-07-22 | 1996-02-06 | Nissin Electric Co Ltd | Ion implanting device |
JPH08124515A (en) * | 1994-10-21 | 1996-05-17 | Toshiba Corp | Ion implantation device |
US5691537A (en) * | 1996-01-22 | 1997-11-25 | Chen; John | Method and apparatus for ion beam transport |
US5969470A (en) * | 1996-11-08 | 1999-10-19 | Veeco Instruments, Inc. | Charged particle source |
JPH11211897A (en) * | 1997-11-05 | 1999-08-06 | Ims Ionen Mikrofab Syst Gmbh | Electrostatic lens with adjusting mechanism |
JP4103016B2 (en) * | 1998-05-21 | 2008-06-18 | 株式会社 Sen−Shi・アクセリス カンパニー | Inclined decel apparatus and ion beam forming method thereof |
-
1998
- 1998-06-19 GB GBGB9813327.5A patent/GB9813327D0/en not_active Ceased
-
1999
- 1999-06-15 JP JP2000555277A patent/JP4677099B2/en not_active Expired - Fee Related
- 1999-06-15 EP EP99926600A patent/EP1090411B1/en not_active Expired - Lifetime
- 1999-06-15 WO PCT/GB1999/001879 patent/WO1999066535A2/en active IP Right Grant
- 1999-06-15 AU AU43788/99A patent/AU4378899A/en not_active Abandoned
- 1999-06-15 DE DE69933930T patent/DE69933930D1/en not_active Expired - Lifetime
-
2000
- 2000-12-15 US US09/736,253 patent/US6498348B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753054A (en) * | 1980-09-16 | 1982-03-29 | Hitachi Ltd | Ion detector |
US4578589A (en) * | 1983-08-15 | 1986-03-25 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
JPS60121659A (en) * | 1983-12-02 | 1985-06-29 | Toshiba Corp | Particle analyzer |
US4902993A (en) * | 1987-02-19 | 1990-02-20 | Kernforschungszentrum Karlsruhe Gmbh | Magnetic deflection system for charged particles |
US5760405A (en) * | 1996-02-16 | 1998-06-02 | Eaton Corporation | Plasma chamber for controlling ion dosage in ion implantation |
JPH09298043A (en) * | 1996-04-30 | 1997-11-18 | Nissin Electric Co Ltd | Ion implanting device |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 006, no. 128 14 July 1982 (1982-07-14) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 03 27 February 1998 (1998-02-27) * |
PATENT ABSTRACTS OF JAPAN vol. 9, no. 277 6 November 1985 (1985-11-06) * |
Also Published As
Publication number | Publication date |
---|---|
DE69933930D1 (en) | 2006-12-21 |
GB9813327D0 (en) | 1998-08-19 |
JP2002518809A (en) | 2002-06-25 |
EP1090411A2 (en) | 2001-04-11 |
WO1999066535A2 (en) | 1999-12-23 |
US20020043621A1 (en) | 2002-04-18 |
EP1090411B1 (en) | 2006-11-08 |
JP4677099B2 (en) | 2011-04-27 |
AU4378899A (en) | 2000-01-05 |
US6498348B2 (en) | 2002-12-24 |
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