WO2000003421A3 - Improved endpoint detection for substrate fabrication processes - Google Patents

Improved endpoint detection for substrate fabrication processes Download PDF

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Publication number
WO2000003421A3
WO2000003421A3 PCT/US1999/015648 US9915648W WO0003421A3 WO 2000003421 A3 WO2000003421 A3 WO 2000003421A3 US 9915648 W US9915648 W US 9915648W WO 0003421 A3 WO0003421 A3 WO 0003421A3
Authority
WO
WIPO (PCT)
Prior art keywords
fabrication processes
endpoint detection
substrate fabrication
improved endpoint
substrate
Prior art date
Application number
PCT/US1999/015648
Other languages
French (fr)
Other versions
WO2000003421A8 (en
WO2000003421A2 (en
WO2000003421A9 (en
Inventor
Zhifeng Sui
Paul E Luscher
Nils Johansson
Michael D Welch
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP99933879A priority Critical patent/EP1125314A1/en
Priority to JP2000559582A priority patent/JP2003521807A/en
Publication of WO2000003421A2 publication Critical patent/WO2000003421A2/en
Publication of WO2000003421A9 publication Critical patent/WO2000003421A9/en
Publication of WO2000003421A3 publication Critical patent/WO2000003421A3/en
Publication of WO2000003421A8 publication Critical patent/WO2000003421A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

Abstract

A substrate (20) is processed in a process chamber (42) and a first process condition that occurs before, during, or after processing of the substrate, is detected. An accuracy or validity of the first process condition is determined by detecting a second process condition.
PCT/US1999/015648 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes WO2000003421A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP99933879A EP1125314A1 (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes
JP2000559582A JP2003521807A (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication process

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9242698P 1998-07-10 1998-07-10
US60/092,426 1998-07-10
US35005299A 1999-07-08 1999-07-08
US09/350,052 1999-07-09

Publications (4)

Publication Number Publication Date
WO2000003421A2 WO2000003421A2 (en) 2000-01-20
WO2000003421A9 WO2000003421A9 (en) 2000-07-20
WO2000003421A3 true WO2000003421A3 (en) 2001-05-31
WO2000003421A8 WO2000003421A8 (en) 2001-09-20

Family

ID=26785660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/015648 WO2000003421A2 (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes

Country Status (3)

Country Link
JP (1) JP2003521807A (en)
KR (1) KR100695582B1 (en)
WO (1) WO2000003421A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW529085B (en) * 2000-09-22 2003-04-21 Alps Electric Co Ltd Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system
ATE328308T1 (en) * 2002-04-23 2006-06-15 Tokyo Electron Ltd METHOD AND DEVICE FOR SIMPLIFIED SYSTEM CONFIGURATION
US6825050B2 (en) 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
JP3959318B2 (en) 2002-08-22 2007-08-15 東京エレクトロン株式会社 Plasma leak monitoring method, plasma processing apparatus, plasma processing method, and computer program
US20060275931A1 (en) * 2005-05-20 2006-12-07 Asm Japan K.K. Technology of detecting abnormal operation of plasma process
US7638441B2 (en) 2007-09-11 2009-12-29 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
KR101307247B1 (en) * 2012-09-26 2013-09-11 가톨릭대학교 산학협력단 Silicon wafer etching method using compensation structure and energy harvester manufacturing method using the same
US9978621B1 (en) 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
CN115537784A (en) * 2022-10-19 2022-12-30 北京北方华创真空技术有限公司 Control method and system for chemical vapor deposition equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0458324A2 (en) * 1990-05-24 1991-11-27 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection system and method
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0458324A2 (en) * 1990-05-24 1991-11-27 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection system and method
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ANGELL D ET AL: "Etch tailoring through flexible end-point detection", ADVANCED TECHNIQUES FOR INTEGRATED CIRCUIT PROCESSING, SANTA CLARA, CA, USA, 1-5 OCT. 1990, vol. 1392, Proceedings of the SPIE - The International Society for Optical Engineering, 1991, USA, pages 543 - 550, XP000853665, ISSN: 0277-786X *
BOEBEL F G ET AL: "Real time, in situ measurement of film thickness with reflexion supported pyrometric interferometry (RSPI)", IEEE/SEMI 1994 ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP. THEME - MANUFACTURING EXCELLENCE: A GLOBAL CHALLENGE. ASMC '94 PROCEEDINGS (CAT. NO.94CH3475-1), PROCEEDINGS OF 1994 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENC, 1994, New York, NY, USA, IEEE, USA, pages 311 - 315, XP002122721, ISBN: 0-7803-2053-0 *
SARFATY M ET AL: "Real-time monitoring and control of plasma etching", 19TH DRY PROCESS SYMPOSIUM (DSP '97), TOKYO, JAPAN, 12-14 NOV. 1997, vol. 37, no. 4B, Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), April 1998, Publication Office, Japanese Journal Appl. Phys, Japan, pages 2381 - 2387, XP002122723, ISSN: 0021-4922 *
WELCH M E ET AL: "Breaking the 0.5 percent exposed area etch endpoint barrier", SEMICONDUCTOR INTERNATIONAL, JULY 1996, CAHNERS PUBLISHING, USA, vol. 19, no. 8, pages 269 - 270, 272, 274, 276, XP000853538, ISSN: 0163-3767 *

Also Published As

Publication number Publication date
JP2003521807A (en) 2003-07-15
WO2000003421A8 (en) 2001-09-20
KR100695582B1 (en) 2007-03-14
WO2000003421A2 (en) 2000-01-20
WO2000003421A9 (en) 2000-07-20
KR20010083104A (en) 2001-08-31

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