WO2000019272B1 - Methods of reducing proximity effects in lithographic processes - Google Patents
Methods of reducing proximity effects in lithographic processesInfo
- Publication number
- WO2000019272B1 WO2000019272B1 PCT/US1999/022815 US9922815W WO0019272B1 WO 2000019272 B1 WO2000019272 B1 WO 2000019272B1 US 9922815 W US9922815 W US 9922815W WO 0019272 B1 WO0019272 B1 WO 0019272B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- main feature
- features
- defining
- main
- pair
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Abstract
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT99950074T ATE467858T1 (en) | 1998-10-01 | 1999-09-30 | METHOD FOR REDUCING THE OPTICAL PROXIMITY EFFECT IN LITHOGRAPHIC PROCESSES |
AU62807/99A AU6280799A (en) | 1998-10-01 | 1999-09-30 | Methods of reducing proximity effects in lithographic processes |
KR1020017004061A KR20010075482A (en) | 1998-10-01 | 1999-09-30 | Methods of reducing proximity effects in lithographic processes |
DE69942370T DE69942370D1 (en) | 1998-10-01 | 1999-09-30 | METHOD OF REDUCING OPTICAL NEAR EFFECT IN LITHOGRAPHIC METHODS |
EP99950074A EP1125167B1 (en) | 1998-10-01 | 1999-09-30 | Methods of reducing proximity effects in lithographic processes |
JP2000572719A JP3461336B2 (en) | 1998-10-01 | 1999-09-30 | Method to reduce proximity effect in lithographic process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/164,786 | 1998-10-01 | ||
US09/164,786 US6120952A (en) | 1998-10-01 | 1998-10-01 | Methods of reducing proximity effects in lithographic processes |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000019272A1 WO2000019272A1 (en) | 2000-04-06 |
WO2000019272B1 true WO2000019272B1 (en) | 2000-05-25 |
Family
ID=22596084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/022815 WO2000019272A1 (en) | 1998-10-01 | 1999-09-30 | Methods of reducing proximity effects in lithographic processes |
Country Status (8)
Country | Link |
---|---|
US (3) | US6120952A (en) |
EP (1) | EP1125167B1 (en) |
JP (1) | JP3461336B2 (en) |
KR (1) | KR20010075482A (en) |
AT (1) | ATE467858T1 (en) |
AU (1) | AU6280799A (en) |
DE (1) | DE69942370D1 (en) |
WO (1) | WO2000019272A1 (en) |
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US8877589B2 (en) | 2005-08-30 | 2014-11-04 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US8916912B2 (en) | 2005-07-08 | 2014-12-23 | Micron Technology, Inc. | Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls |
US9129847B2 (en) | 2006-07-17 | 2015-09-08 | Micron Technology, Inc. | Transistor structures and integrated circuitry comprising an array of transistor structures |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6499003B2 (en) * | 1998-03-03 | 2002-12-24 | Lsi Logic Corporation | Method and apparatus for application of proximity correction with unitary segmentation |
US6120952A (en) * | 1998-10-01 | 2000-09-19 | Micron Technology, Inc. | Methods of reducing proximity effects in lithographic processes |
JP2000235251A (en) * | 1999-02-16 | 2000-08-29 | Sony Corp | Exposure pattern correction method, exposure method, aligner, photomask and semiconductor device |
US6467076B1 (en) * | 1999-04-30 | 2002-10-15 | Nicolas Bailey Cobb | Method and apparatus for submicron IC design |
US6301697B1 (en) * | 1999-04-30 | 2001-10-09 | Nicolas B. Cobb | Streamlined IC mask layout optical and process correction through correction reuse |
US6335128B1 (en) | 1999-09-28 | 2002-01-01 | Nicolas Bailey Cobb | Method and apparatus for determining phase shifts and trim masks for an integrated circuit |
US6643616B1 (en) * | 1999-12-07 | 2003-11-04 | Yuri Granik | Integrated device structure prediction based on model curvature |
TW440903B (en) * | 2000-02-15 | 2001-06-16 | Winbond Electronics Corp | Method to reduce the deviation of optical proximity effect in the photolithography process |
US6361911B1 (en) * | 2000-04-17 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company | Using a dummy frame pattern to improve CD control of VSB E-beam exposure system and the proximity effect of laser beam exposure system and Gaussian E-beam exposure system |
US6425113B1 (en) * | 2000-06-13 | 2002-07-23 | Leigh C. Anderson | Integrated verification and manufacturability tool |
US7412676B2 (en) * | 2000-06-13 | 2008-08-12 | Nicolas B Cobb | Integrated OPC verification tool |
US6541165B1 (en) | 2000-07-05 | 2003-04-01 | Numerical Technologies, Inc. | Phase shift mask sub-resolution assist features |
US6777141B2 (en) | 2000-07-05 | 2004-08-17 | Numerical Technologies, Inc. | Phase shift mask including sub-resolution assist features for isolated spaces |
US6430737B1 (en) * | 2000-07-10 | 2002-08-06 | Mentor Graphics Corp. | Convergence technique for model-based optical and process correction |
US6516459B1 (en) | 2000-07-10 | 2003-02-04 | Mentor Graphics Corporation | Integrated circuit design correction using fragment correspondence |
DE10038928A1 (en) * | 2000-08-09 | 2002-02-28 | Infineon Technologies Ag | Photolithographic mask |
US6519760B2 (en) * | 2001-02-28 | 2003-02-11 | Asml Masktools, B.V. | Method and apparatus for minimizing optical proximity effects |
US6574784B1 (en) * | 2001-06-14 | 2003-06-03 | George P. Lippincott | Short edge management in rule based OPC |
DE10143723B4 (en) | 2001-08-31 | 2006-09-28 | Infineon Technologies Ag | A method for optimizing a layout for a mask for use in semiconductor fabrication |
US7014956B2 (en) * | 2002-01-04 | 2006-03-21 | Intel Corporation | Active secondary exposure mask to manufacture integrated circuits |
US7293249B2 (en) * | 2002-01-31 | 2007-11-06 | Juan Andres Torres Robles | Contrast based resolution enhancement for photolithographic processing |
US7013439B2 (en) * | 2002-01-31 | 2006-03-14 | Juan Andres Torres Robles | Contrast based resolution enhancing technology |
US6803157B2 (en) * | 2002-03-01 | 2004-10-12 | Micron Technology, Inc. | Pattern mask with features to minimize the effect of aberrations |
US6783904B2 (en) * | 2002-05-17 | 2004-08-31 | Freescale Semiconductor, Inc. | Lithography correction method and device |
US6973633B2 (en) * | 2002-07-24 | 2005-12-06 | George Lippincott | Caching of lithography and etch simulation results |
US6934928B2 (en) * | 2002-08-27 | 2005-08-23 | Micron Technology, Inc. | Method and apparatus for designing a pattern on a semiconductor surface |
US6898779B2 (en) * | 2002-08-28 | 2005-05-24 | Micron Technology, Inc. | Pattern generation on a semiconductor surface |
US6857109B2 (en) * | 2002-10-18 | 2005-02-15 | George P. Lippincott | Short edge smoothing for enhanced scatter bar placement |
US6928634B2 (en) * | 2003-01-02 | 2005-08-09 | Yuri Granik | Matrix optical process correction |
US7147975B2 (en) | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
US6777146B1 (en) | 2003-02-21 | 2004-08-17 | International Business Machines Corporation | Method of optical proximity correction with sub-resolution assists |
US7001693B2 (en) * | 2003-02-28 | 2006-02-21 | International Business Machines Corporation | Binary OPC for assist feature layout optimization |
US6964032B2 (en) * | 2003-02-28 | 2005-11-08 | International Business Machines Corporation | Pitch-based subresolution assist feature design |
US7205633B2 (en) * | 2003-06-27 | 2007-04-17 | Micron Technology, Inc. | Capacitor layout orientation |
US7558419B1 (en) | 2003-08-14 | 2009-07-07 | Brion Technologies, Inc. | System and method for detecting integrated circuit pattern defects |
US7003758B2 (en) * | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
US7073162B2 (en) * | 2003-10-31 | 2006-07-04 | Mentor Graphics Corporation | Site control for OPC |
DE10356693A1 (en) * | 2003-11-27 | 2005-07-14 | Infineon Technologies Ag | A method of generating an aberration avoiding mask layout for a mask |
US7536660B2 (en) * | 2004-02-24 | 2009-05-19 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
US7539954B2 (en) * | 2004-02-24 | 2009-05-26 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
US7861207B2 (en) | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
US7234130B2 (en) * | 2004-02-25 | 2007-06-19 | James Word | Long range corrections in integrated circuit layout designs |
US8799830B2 (en) * | 2004-05-07 | 2014-08-05 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
US7240305B2 (en) * | 2004-06-02 | 2007-07-03 | Lippincott George P | OPC conflict identification and edge priority system |
US7547945B2 (en) * | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
US7459248B2 (en) * | 2005-02-24 | 2008-12-02 | James Word | Performing OPC on structures with virtual edges |
US8037429B2 (en) * | 2005-03-02 | 2011-10-11 | Mentor Graphics Corporation | Model-based SRAF insertion |
US7493587B2 (en) * | 2005-03-02 | 2009-02-17 | James Word | Chromeless phase shifting mask for integrated circuits using interior region |
US7381654B2 (en) * | 2005-05-31 | 2008-06-03 | Taiwan Semiconductor Manufacturing Co. | Method for fabricating right-angle holes in a substrate |
US7434199B2 (en) * | 2005-09-27 | 2008-10-07 | Nicolas Bailey Cobb | Dense OPC |
US7700441B2 (en) | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US7506285B2 (en) | 2006-02-17 | 2009-03-17 | Mohamed Al-Imam | Multi-dimensional analysis for predicting RET model accuracy |
US7712068B2 (en) * | 2006-02-17 | 2010-05-04 | Zhuoxiang Ren | Computation of electrical properties of an IC layout |
US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
US7589995B2 (en) | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
US8056022B2 (en) | 2006-11-09 | 2011-11-08 | Mentor Graphics Corporation | Analysis optimizer |
US7966585B2 (en) * | 2006-12-13 | 2011-06-21 | Mentor Graphics Corporation | Selective shielding for multiple exposure masks |
US7802226B2 (en) * | 2007-01-08 | 2010-09-21 | Mentor Graphics Corporation | Data preparation for multiple mask printing |
US7799487B2 (en) * | 2007-02-09 | 2010-09-21 | Ayman Yehia Hamouda | Dual metric OPC |
US7739650B2 (en) * | 2007-02-09 | 2010-06-15 | Juan Andres Torres Robles | Pre-bias optical proximity correction |
JP4557994B2 (en) * | 2007-02-22 | 2010-10-06 | 株式会社日立製作所 | Method for manufacturing magnetic recording medium |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8713483B2 (en) | 2007-06-05 | 2014-04-29 | Mentor Graphics Corporation | IC layout parsing for multiple masks |
CN101349861B (en) * | 2007-07-19 | 2010-09-08 | 上海华虹Nec电子有限公司 | Method of smoothing regulation type optical approach correcting light mask pattern |
US7647569B2 (en) * | 2007-08-01 | 2010-01-12 | Micron Technology, Inc. | Systems, methods, and computer-readable media for adjusting layout database hierarchies for more efficient database processing and storage |
US7805699B2 (en) * | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
US8037446B2 (en) * | 2008-07-16 | 2011-10-11 | Micron Technology, Inc. | Methods for defining evaluation points for optical proximity correction and optical proximity correction methods including same |
US8176446B2 (en) * | 2008-09-11 | 2012-05-08 | International Business Machines Corporation | Method for compensating for variations in structures of an integrated circuit |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5242770A (en) * | 1992-01-16 | 1993-09-07 | Microunity Systems Engineering, Inc. | Mask for photolithography |
JP3194155B2 (en) * | 1992-01-31 | 2001-07-30 | キヤノン株式会社 | Semiconductor device manufacturing method and projection exposure apparatus using the same |
AU4277893A (en) * | 1992-04-06 | 1993-11-08 | Microunity Systems Engineering, Inc. | Method for forming a lithographic pattern in a process for manufacturing semiconductor devices |
US5256505A (en) * | 1992-08-21 | 1993-10-26 | Microunity Systems Engineering | Lithographical mask for controlling the dimensions of resist patterns |
US5447810A (en) * | 1994-02-09 | 1995-09-05 | Microunity Systems Engineering, Inc. | Masks for improved lithographic patterning for off-axis illumination lithography |
JPH08202020A (en) * | 1995-01-31 | 1996-08-09 | Sony Corp | Evalulating method of pattern in photomask, photomask, production of photomask, forming method of pattern in photomask and exposing method |
US5663893A (en) * | 1995-05-03 | 1997-09-02 | Microunity Systems Engineering, Inc. | Method for generating proximity correction features for a lithographic mask pattern |
JPH0915833A (en) * | 1995-06-30 | 1997-01-17 | Sony Corp | Scanning data forming device and scanning data forming method in exposing mask manufacturing device |
US5972541A (en) * | 1996-02-27 | 1999-10-26 | Lsi Logic Corporation | Reticle and method of design to correct pattern for depth of focus problems |
US5707765A (en) * | 1996-05-28 | 1998-01-13 | Microunity Systems Engineering, Inc. | Photolithography mask using serifs and method thereof |
US5795688A (en) * | 1996-08-14 | 1998-08-18 | Micron Technology, Inc. | Process for detecting defects in photomasks through aerial image comparisons |
US5821014A (en) * | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
US5958635A (en) * | 1997-10-20 | 1999-09-28 | Motorola, Inc. | Lithographic proximity correction through subset feature modification |
US5858591A (en) * | 1998-02-02 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Optical proximity correction during wafer processing through subfile bias modification with subsequent subfile merging |
US6120952A (en) * | 1998-10-01 | 2000-09-19 | Micron Technology, Inc. | Methods of reducing proximity effects in lithographic processes |
-
1998
- 1998-10-01 US US09/164,786 patent/US6120952A/en not_active Expired - Lifetime
-
1999
- 1999-09-30 AU AU62807/99A patent/AU6280799A/en not_active Abandoned
- 1999-09-30 JP JP2000572719A patent/JP3461336B2/en not_active Expired - Fee Related
- 1999-09-30 AT AT99950074T patent/ATE467858T1/en not_active IP Right Cessation
- 1999-09-30 EP EP99950074A patent/EP1125167B1/en not_active Expired - Lifetime
- 1999-09-30 DE DE69942370T patent/DE69942370D1/en not_active Expired - Lifetime
- 1999-09-30 WO PCT/US1999/022815 patent/WO2000019272A1/en not_active Application Discontinuation
- 1999-09-30 KR KR1020017004061A patent/KR20010075482A/en active Search and Examination
-
2001
- 2001-01-24 US US09/769,603 patent/US6284419B2/en not_active Expired - Lifetime
- 2001-02-12 US US09/780,407 patent/US6319644B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8916912B2 (en) | 2005-07-08 | 2014-12-23 | Micron Technology, Inc. | Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls |
US9536971B2 (en) | 2005-07-08 | 2017-01-03 | Micron Technology, Inc. | Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls |
US8877589B2 (en) | 2005-08-30 | 2014-11-04 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US9129847B2 (en) | 2006-07-17 | 2015-09-08 | Micron Technology, Inc. | Transistor structures and integrated circuitry comprising an array of transistor structures |
Also Published As
Publication number | Publication date |
---|---|
JP2002526792A (en) | 2002-08-20 |
EP1125167B1 (en) | 2010-05-12 |
ATE467858T1 (en) | 2010-05-15 |
EP1125167A1 (en) | 2001-08-22 |
KR20010075482A (en) | 2001-08-09 |
US6120952A (en) | 2000-09-19 |
JP3461336B2 (en) | 2003-10-27 |
US20010023045A1 (en) | 2001-09-20 |
US6284419B2 (en) | 2001-09-04 |
AU6280799A (en) | 2000-04-17 |
US20010002304A1 (en) | 2001-05-31 |
US6319644B2 (en) | 2001-11-20 |
WO2000019272A1 (en) | 2000-04-06 |
DE69942370D1 (en) | 2010-06-24 |
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