WO2000028664A8 - Fully integrated tuner architecture - Google Patents

Fully integrated tuner architecture

Info

Publication number
WO2000028664A8
WO2000028664A8 PCT/US1999/026700 US9926700W WO0028664A8 WO 2000028664 A8 WO2000028664 A8 WO 2000028664A8 US 9926700 W US9926700 W US 9926700W WO 0028664 A8 WO0028664 A8 WO 0028664A8
Authority
WO
WIPO (PCT)
Prior art keywords
frequency
filter
filters
receiver
image
Prior art date
Application number
PCT/US1999/026700
Other languages
French (fr)
Other versions
WO2000028664A2 (en
WO2000028664A3 (en
Inventor
Pieter Vorenkamp
Klaas Bult
Frank Carr
Christopher M Ward
Ralph Duncan
Tom W Kwan
James Y C Chang
Haideh Khorramabadi
Original Assignee
Broadcom Corp
Pieter Vorenkamp
Klaas Bult
Frank Carr
Christopher M Ward
Ralph Duncan
Tom W Kwan
James Y C Chang
Haideh Khorramabadi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27574786&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2000028664(A8) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Broadcom Corp, Pieter Vorenkamp, Klaas Bult, Frank Carr, Christopher M Ward, Ralph Duncan, Tom W Kwan, James Y C Chang, Haideh Khorramabadi filed Critical Broadcom Corp
Priority to EP99965786A priority Critical patent/EP1145430B1/en
Priority to DE69920273T priority patent/DE69920273T2/en
Priority to AU21479/00A priority patent/AU2147900A/en
Priority to AT99965786T priority patent/ATE276605T1/en
Publication of WO2000028664A2 publication Critical patent/WO2000028664A2/en
Publication of WO2000028664A8 publication Critical patent/WO2000028664A8/en
Publication of WO2000028664A3 publication Critical patent/WO2000028664A3/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/18Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by means of synchronous gating arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • H01F17/0006Printed inductances
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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    • H01ELECTRIC ELEMENTS
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
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    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
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    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
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    • H03B5/364Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
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    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
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    • H03D7/161Multiple-frequency-changing all the frequency changers being connected in cascade
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    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0023Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
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    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
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    • H03GCONTROL OF AMPLIFICATION
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    • H03G3/20Automatic control
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    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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    • H03J1/0066Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor provided with channel identification means with means for analysing the received signal strength
    • H03J1/0075Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor provided with channel identification means with means for analysing the received signal strength where the receiving frequencies of the stations are stored in a permanent memory, e.g. ROM
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    • HELECTRICITY
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    • H03JTUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00Continuous tuning
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    • H03J3/16Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
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    • H03L7/102Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using an additional control signal to the controlled loop oscillator derived from a signal generated in the loop the additional signal being directly applied to the controlled loop oscillator
    • H03L7/103Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using an additional control signal to the controlled loop oscillator derived from a signal generated in the loop the additional signal being directly applied to the controlled loop oscillator the additional signal being a digital signal
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    • H03L7/06Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/16Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
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    • H03L7/183Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop a time difference being used for locking the loop, the counter counting between fixed numbers or the frequency divider dividing by a fixed number
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    • H03L7/06Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
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    • H03L7/22Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using more than one loop
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    • H03J2200/10Tuning of a resonator by means of digitally controlled capacitor bank
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    • H03L2207/06Phase locked loops with a controlled oscillator having at least two frequency control terminals

Abstract

An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation and a programable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjonction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors. The filters are tuned usingt local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver.
PCT/US1999/026700 1998-11-12 1999-11-12 Fully integrated tuner architecture WO2000028664A2 (en)

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EP99965786A EP1145430B1 (en) 1998-11-12 1999-11-12 Integrated tuner architecture
DE69920273T DE69920273T2 (en) 1998-11-12 1999-11-12 INTEGRATED TUNER ARCHITECTURE
AU21479/00A AU2147900A (en) 1998-11-12 1999-11-12 Fully integrated tuner architecture
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CN108233877B (en) * 2017-12-27 2021-08-27 安徽华东光电技术研究所 Manufacturing process of low-noise amplifier

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